KR20060128764A - 복합 파장의 광을 발생시키는 발광 다이오드 소자의제조방법 - Google Patents
복합 파장의 광을 발생시키는 발광 다이오드 소자의제조방법 Download PDFInfo
- Publication number
- KR20060128764A KR20060128764A KR1020060104670A KR20060104670A KR20060128764A KR 20060128764 A KR20060128764 A KR 20060128764A KR 1020060104670 A KR1020060104670 A KR 1020060104670A KR 20060104670 A KR20060104670 A KR 20060104670A KR 20060128764 A KR20060128764 A KR 20060128764A
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- South Korea
- Prior art keywords
- light
- led chip
- led
- phosphor
- led device
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
Claims (4)
- 기판 상에 형성된 LED칩 구조물을 포함하는 LED칩으로부터 방출되는 주 광을 하나 이상의 다른 광 파장으로 변환시키는 형광체가 구비된 LED 소자의 제조방법에 있어서,상기 LED칩 구조물이 형성되어 있는 면이 아래로 향하도록 상기 LED칩 구조물을 뒤집는 단계; 및스퍼터링법 또는 레이저 펄스(pulsed laser deposition)법을 사용하여 상기 LED칩의 상기 LED칩 구조물이 형성되어 있는 면의 반대편 면 상에 상기 형광체가 포함된 타깃 물질의 막을 증착하여 형광체막을 형성하는 단계를 포함하는 것을 특징으로 하는 복합 파장의 광을 발생시키는 LED 소자의 제조방법.
- 제1항에 있어서, 상기 타깃 물질은 SiO2 또는 SiO를 포함하는 물질로 형성하는 것을 특징으로 하는 복합 파장의 광을 발생시키는 LED 소자의 제조방법.
- 제1항에 있어서, 상기 스퍼터링법은 Pulsed DC 파워 또는 RF 파워를 사용하여 실시하는 것을 특징으로 하는 복합 파장의 광을 발생시키는 LED 소자의 제조방법.
- 제1항에 있어서, 상기 발광 다이오드 칩은 자외선 광을 발광하는 LED칩이거나 청색 광을 발광하는 LED칩인 것을 특징으로 하는 복합 파장의 광을 발생시키는 LED 소자의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060104670A KR100940049B1 (ko) | 2006-10-26 | 2006-10-26 | 복합 파장의 광을 발생시키는 발광 다이오드 소자의제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020060104670A KR100940049B1 (ko) | 2006-10-26 | 2006-10-26 | 복합 파장의 광을 발생시키는 발광 다이오드 소자의제조방법 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020030041423A Division KR100788744B1 (ko) | 2003-06-25 | 2003-06-25 | 복합 파장의 광을 발생시키는 발광 다이오드 소자 및 그 제조방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020090090407A Division KR101004921B1 (ko) | 2009-09-24 | 2009-09-24 | 복합 파장의 광을 발생시키는 발광 다이오드 소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20060128764A true KR20060128764A (ko) | 2006-12-14 |
KR100940049B1 KR100940049B1 (ko) | 2010-02-03 |
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KR1020060104670A KR100940049B1 (ko) | 2006-10-26 | 2006-10-26 | 복합 파장의 광을 발생시키는 발광 다이오드 소자의제조방법 |
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TWI456798B (zh) | 2010-04-23 | 2014-10-11 | Formosa Epitaxy Inc | 發光裝置之製造方法 |
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US6696703B2 (en) * | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
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