1272733 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種混光LED裝置及其製造方法，尤指一種將不同顏 色之LED封裝結構與光致發光薄膜，藉由黏著層結合成上下重疊之混光 LED裝置及其製造方法。 【先前技術】1272733 IX. Description of the Invention: [Technical Field] The present invention relates to a light-mixing LED device and a method of manufacturing the same, and more particularly to an LED package structure and a photoluminescent film of different colors, which are combined by an adhesive layer Overlapping mixed light LED device and method of manufacturing the same. [Prior Art]
• 白光LED爲近年光電產業的發展主軸之一。混光產生白光之LED ' 主要分爲二種形式，一種爲單或雙色LED加上螢光材料，另一種則將紅、 • 綠、藍（RGB)三色LED混光。 例如，中華民國專利公告編號385063之『新白光LED元件』，係由一 紫外光LED晶圓及配合一具有紅色、綠色、藍色三顏色混合之螢光粉所組 合構成’其特徵點爲由紫外光LK)晶圓產生紫外光，來激發塗或鍍在其表 面或周圍之含有紅色、綠色、藍色三顏色混合之螢光粉，使產生白色光者。 其中螢光粉可與透明膠混合後，與紫外光晶圓包裝成小粒狀結構，再用透 _ 明膠封裝成較大粒狀LED之結構。 日亞公司（NICHIA)於中華民國專利公開公告號2〇〇52〇262中亦提出 一種發光裝置，其包含放出在近紫外光區域至可見光區域具有主發光峰波 長之光之發光元件及螢光體。該發光裝置包含具有直接轉變型發光中心， - 或藉由發光元件直接激發之2種以上之螢光體。然而，此類產品的主要缺 點在於紫外光LED的發光效率低，且螢光材料有衰減及遮蔽LED所發之光 等問題。日亞公司（NICHIA)於中華民國專利證號156177中則提出一種 面狀發光裝置，藉由一半導體發光元件（如藍光LED)及光致發光螢光體 所發出光形成混色光。其中半導體發光元件爲In之氮化合物，螢光體爲二 1272733 種以上的石榴石系氧化物，因此可產生二種以上螢光。 然而，除了上述問題外，此類產品的混光效果皆偏黃，演色性不佳。 此外，就包含螢光體之白光LED而言，目前重要相關專利仍屬日亞公司所 有，爲後續發展的主要障礙。 有鑑於此，本發明人乃根據多年在LED光電領域累積之經驗及知識，-積極硏發混光效果及演色性良奸之白光LED，或混光之LED。 【發明内容】 本發明之目的在於提供一種混光LED裝置，其具有良好之混光效果及 演色性。 本發明之另一目的在於提供一種製造混光LED裝置的方法，其具有製 程簡單、成本低、良率高等優點。 本發明之混光LED裝置包括：一 LED封裝結構，其具有一基板、形成 於基板上之單色或多色磊晶發光層、及設置於適當位置以提供發光能量之 電極；一光致發光薄膜；一設於LED封裝結構與光致發光薄膜間之透明黏 著層；其中，LED封裝結構與光致發光薄膜形成之混光具有預設之波長。 上述LED封裝結構之多色磊晶發光層及光致發光薄膜較佳爲紅、綠、 藍（RGB)三種顏色之任意組合，其原則爲光致發光薄膜之能隙小於LED 材料之能隙；例如，LED封裝結構之磊晶發光層爲發藍光之GaN及發綠光 之InGaN，光致發光薄膜則爲發紅光之AlGalnP。當LED封裝結構之磊晶 發光層爲UV時，光致發光薄膜可爲藍、綠及紅光。 光致發光薄膜可爲聚合物材質或磊晶膜，甚至具有均勻分佈之孔隙， 以調整其於混光中的比例。光致發光薄膜之表面上可黏著一玻璃視窗。本 發明使用之透明黏著層較佳爲聚合物材質。 本發明製造混光LED之方法至少包括下列步驟：⑻提供一LED封裝 1272733 結構，其至少包括一基板、成長於該基板上之單或多色磊晶發光層、及設 置於適當位置以提供發光能量之電極；(b)於LED封裝結構胃@一透 明黏著層黏著一光致發光薄膜；其中，led封裝結構之磊晶發光層與光致 發光薄膜之顏色可混光成所需之波長。 上述之方法中，光致發光薄膜可先形成於一磊晶用暫時基板上，再於 光致發光薄膜表面黏著一玻璃基板，接著將磊晶用暫時基板去除，最後藉 由透明黏著層將光致發光薄膜黏著至LED封_結_$胃° 此外，光致發光薄膜更可藉由光微影程序形成均勻分佈之孔隙’或以 蝕刻程序形成均勻分佈之孔隙。 【實施方式】 第1圖爲本發明較佳實施例爲混光led之結構剖面示意圖，其包括 一藍綠光LED封裝結構10，該藍綠光LED封裝結構10包括一藍寶石基板 η，成長於藍寶石基板11上材質爲藍光GaN及(或)綠光InGaN之LED發 光層12，及設置於適當位置以提供發光能量之電極13、14。提供或傳送電 壓/電流或控制訊號之封裝接腳21、22，則可藉由金屬接線23、24連接至 Φ 電極η、Η。一材質爲AlGalnP之光致發光磊晶膜3〇藉由透明膠層51黏 著於藍綠光LED封裝結構10的表面；一玻璃視窗層40藉由透明膠層52 黏著於磊晶膜30表面。本實施例中，藍綠光LED封裝結構10之磊晶發光 層12與光致發光磊晶膜30之顏色對白光爲互補，因此當藍綠光LED封裝 結構10之磊晶發光層12於適當電壓下發光時，可激發光致發光磊晶膜30 產生紅光’最後即混光成白光，亦可藉藍光、綠光LEDs電流調整並激發紅 光’混成所需波長之紅光。 本實施例中，光致發光磊晶膜30具有均勻分佈之孔隙35 ;透明膠層 51及52爲具有黏性的透明聚合物材質。 1272733 第2〜5圖爲製造上述混光LED裝置過程中結構剖面示意圖。如第2圖 所示，先於GaAs磊晶用基板60上磊晶生長一整層AlGalnP紅色磊晶膜30; 同時提供一玻璃視窗層40，並藉由透明膠層52將紅色磊晶膜3〇與玻璃視 窗層40黏著在一起。藉由玻璃視窗層40的支撐，便可將透光率較低的磊 晶用基板60去除，形成如第3圖所示之結構。 本實施例之混光LED裝置並將紅色磊晶膜30的面積減小；如第4圖 所示便是將紅色磊晶膜30予以鈾刻，形成均勻分布的孔隙35，藉此調整紅 色磊晶膜30的面積，3文善混光後的演色性。 接著，如第5圖所示，於藍寶石基板11上磊晶生長藍色GaN及綠色 ’ InGaN發光層12，並於適當位置鍍設電極13、14。接著，以金屬接線23、 24連接電極13、14及封裝接腳21、22。最後將上述結構予以封裝，形成 - 一完整的藍綠光LED封裝結構10。 將先前完成如第4圖所示之結構翻轉，並以透明膠層52黏著在藍綠光 LED封裝結構10表面，即完成第1圖之裝置。 本實施例之白光LED裝置經由簡單的黏貼程序，將藍綠光LED封裝結 構10與紅色光致發光薄膜3〇重疊結合，達到混光的目的。亦可藉由適當 調整各層厚度及面積，使混光效果達到最佳化，製造演色性高的混光LED • 裝置。 惟，本發明使用之材質並不限於上數較佳實施例所述者，凡可藉由黏 貼程序達成混光目的者皆可採用。例如，LED發光層與磊晶膜的顏色可加 .以互換或改變，以達到所要求的混光結果；而最後黏貼的透明薄膜亦不限 - 於磊晶膜或ΑΚΜηΡ材質，可爲任何適用於黏貼程序的薄膜或材莺。此外， 若爲滿足特定目的或需求，以本發明結構爲基礎增加其他材料餍，亦 本發明範圍內之簡單修飾。 " ' 1272733 【圖式簡單說明】 第1圖爲本發明較佳實施例之混光led之結構剖面示意圖。 第2〜5圖爲本發明製造混光LED過程之結構剖面示意圖。 【主要元件符號說明】 藍綠光LED封裝結構 10 藍寶石基板 11 藍綠光LED發光層 12 電極 13、14 封裝接腳 21 > 22 金屬接線 23、24 光致發光磊晶膜 30 孔隙 35 玻璃視窗層 40 透明膠層 5卜52 GaAs晶晶用基板 60 9• White LED is one of the development spindles of the optoelectronic industry in recent years. LEDs that combine white light to produce white light are mainly divided into two types, one for single or two-color LEDs plus fluorescent materials, and the other for red, green, and blue (RGB) three-color LEDs. For example, the “New White LED Component” of the Republic of China Patent No. 385063 is composed of an ultraviolet LED wafer and a combination of phosphors with a mixture of red, green and blue colors. The ultraviolet light LK) wafer generates ultraviolet light to excite the phosphor powder mixed with red, green, and blue colors coated or plated on or around the surface to produce white light. The phosphor powder can be mixed with the transparent glue, packaged into a small granular structure with the ultraviolet wafer, and then encapsulated into a large granular LED structure by using _ gelatin. A light-emitting device comprising a light-emitting element that emits light having a wavelength of a main luminescence peak in a near-ultraviolet region to a visible region and a fluorescent light is also proposed by the Japanese company (NICHIA) in the Republic of China Patent Publication No. 2〇〇52〇262. body. The light-emitting device includes two or more kinds of phosphors having a direct conversion type light-emitting center, or directly excited by a light-emitting element. However, the main disadvantage of such products is that the luminous efficiency of the ultraviolet LED is low, and the fluorescent material has the problems of attenuating and shielding the light emitted by the LED. The Japanese company (NICHIA) in the Republic of China Patent No. 156177 proposes a planar light-emitting device which forms a mixed color light by light emitted from a semiconductor light-emitting element such as a blue LED and a photoluminescence phosphor. Among them, the semiconductor light-emitting device is a nitrogen compound of In, and the phosphor is two 12772733 kinds of garnet-based oxides, so that two or more kinds of fluorescent light can be generated. However, in addition to the above problems, the light mixing effect of such products is yellowish and the color rendering is not good. In addition, in the case of white LEDs containing phosphors, the current important related patents are still owned by Nichia Corporation and are the main obstacles for subsequent development. In view of this, the inventors have accumulated experience and knowledge in the field of LED optoelectronics for many years - a white LED that actively emits a light-mixing effect and a color-changing traitor, or a light-mixed LED. SUMMARY OF THE INVENTION It is an object of the present invention to provide a light mixing LED device that has a good light mixing effect and color rendering properties. Another object of the present invention is to provide a method of manufacturing a light-mixing LED device which has the advantages of simple process, low cost, high yield, and the like. The light-mixing LED device of the present invention comprises: an LED package structure having a substrate, a monochromatic or multi-color epitaxial light-emitting layer formed on the substrate, and an electrode disposed at an appropriate position to provide light-emitting energy; a photoluminescence a transparent adhesive layer disposed between the LED package structure and the photoluminescent film; wherein the mixed light formed by the LED package structure and the photoluminescent film has a predetermined wavelength. The multi-color epitaxial luminescent layer and the photo luminescent film of the LED package structure are preferably any combination of three colors of red, green and blue (RGB), the principle that the energy gap of the photo luminescent film is smaller than the energy gap of the LED material; For example, the epitaxial light-emitting layer of the LED package structure is blue-emitting GaN and green-emitting InGaN, and the photo-emitting film is red-emitting AlGalnP. When the epitaxial luminescent layer of the LED package structure is UV, the photo luminescent film may be blue, green, and red. The photoluminescent film can be a polymer material or an epitaxial film, or even a uniformly distributed pore to adjust its proportion in the light mixing. A glass window can be adhered to the surface of the photoluminescent film. The transparent adhesive layer used in the present invention is preferably a polymer material. The method for manufacturing a light-mixing LED of the present invention comprises at least the following steps: (8) providing an LED package 1272733 structure comprising at least a substrate, a single or multi-color epitaxial light-emitting layer grown on the substrate, and being disposed at an appropriate position to provide illumination An electrode of energy; (b) a photoluminescent film adhered to the LED package structure stomach@a transparent adhesive layer; wherein the color of the epitaxial light-emitting layer and the photo-emitting film of the LED package structure can be mixed to a desired wavelength. In the above method, the photoluminescent film can be formed on a temporary substrate for epitaxy, and then a glass substrate is adhered to the surface of the photoluminescent film, and then the epitaxial wafer is removed by a temporary substrate, and finally the light is transparently adhered to the substrate. The photoluminescent film is adhered to the LED package. In addition, the photoluminescent film can form a uniformly distributed pore by a photolithography process or form an evenly distributed pore by an etching process. [Embodiment] FIG. 1 is a cross-sectional view showing a structure of a light-mixed LED according to a preferred embodiment of the present invention, which includes a blue-green LED package structure 10 including a sapphire substrate η, which is grown in The sapphire substrate 11 is made of an LED luminescent layer 12 of blue GaN and/or green InGaN, and electrodes 13 and 14 disposed at appropriate positions to provide luminescent energy. The package pins 21, 22 that supply or transmit voltage/current or control signals can be connected to the Φ electrodes η, Η by metal wires 23, 24. A photoluminescence epitaxial film 3 of AlGalnP is adhered to the surface of the blue-green LED package structure 10 by a transparent adhesive layer 51; a glass window layer 40 is adhered to the surface of the epitaxial film 30 by a transparent adhesive layer 52. In this embodiment, the color of the epitaxial luminescent layer 12 and the photoluminescent epitaxial film 30 of the blue-green LED package structure 10 are complementary to white light, so when the epitaxial luminescent layer 12 of the blue-green LED package structure 10 is appropriate When the light is emitted, the photoluminescence epitaxial film 30 can be excited to generate red light. Finally, the light is mixed into white light, and the blue light and the green LEDs can be used to adjust and excite the red light to mix the red light of the desired wavelength. In this embodiment, the photoluminescent epitaxial film 30 has uniformly distributed pores 35; the transparent adhesive layers 51 and 52 are viscous transparent polymer materials. 1272733 Figures 2 to 5 are schematic cross-sectional views showing the structure of the above-described light-mixing LED device. As shown in FIG. 2, an entire layer of AlGalnP red epitaxial film 30 is epitaxially grown on the GaAs epitaxial substrate 60; a glass window layer 40 is provided, and the red epitaxial film 3 is provided by the transparent adhesive layer 52. The crucible is adhered to the glass window layer 40. By supporting the glass window layer 40, the epitaxial substrate 60 having a low light transmittance can be removed to form a structure as shown in Fig. 3. The light-mixing LED device of this embodiment reduces the area of the red epitaxial film 30; as shown in FIG. 4, the red epitaxial film 30 is uranium-etched to form a uniformly distributed aperture 35, thereby adjusting the red protrusion. The area of the crystal film 30, and the color rendering after mixing with the text. Next, as shown in Fig. 5, blue GaN and green 'InGaN light-emitting layer 12 are epitaxially grown on the sapphire substrate 11, and electrodes 13 and 14 are plated at appropriate positions. Next, the electrodes 13, 14 and the package pins 21, 22 are connected by metal wires 23, 24. Finally, the above structure is packaged to form a complete blue-green LED package structure 10. The structure as shown in Fig. 4 was previously inverted, and the transparent adhesive layer 52 was adhered to the surface of the blue-green LED package structure 10, that is, the apparatus of Fig. 1 was completed. The white LED device of the present embodiment overlaps the blue-green LED package structure 10 and the red photoluminescent film 3〇 via a simple pasting procedure to achieve the purpose of light mixing. It is also possible to optimize the color mixing effect by appropriately adjusting the thickness and area of each layer to produce a mixed color LED device with high color rendering. However, the materials used in the present invention are not limited to those described in the preferred embodiment above, and any one that can achieve the purpose of mixing by the pasting procedure can be used. For example, the color of the LED light-emitting layer and the epitaxial film may be added or changed to be interchanged or changed to achieve the desired light-mixing result; and the final transparent film is not limited to the epitaxial film or the ΑΚΜηΡ material, and may be any suitable. Film or material for the pasting process. Furthermore, it is also a simple modification within the scope of the invention to add other materials based on the structure of the present invention in order to satisfy a particular purpose or need. " ' 1272733 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing the structure of a light-mixed led light according to a preferred embodiment of the present invention. 2 to 5 are schematic cross-sectional views showing the process of manufacturing a mixed light LED according to the present invention. [Main component symbol description] Blue-green LED package structure 10 Sapphire substrate 11 Blue-green LED light-emitting layer 12 Electrode 13, 14 Package pin 21 > 22 Metal wiring 23, 24 Photoluminescent epitaxial film 30 Pore 35 Glass window Layer 40 transparent adhesive layer 5 52 GaAs crystal substrate 60 9