KR20060115872A - 높은 ｋ 유전체 필름 - Google Patents

높은 ｋ 유전체 필름 Download PDF

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Publication number
KR20060115872A
KR20060115872A KR1020067009194A KR20067009194A KR20060115872A KR 20060115872 A KR20060115872 A KR 20060115872A KR 1020067009194 A KR1020067009194 A KR 1020067009194A KR 20067009194 A KR20067009194 A KR 20067009194A KR 20060115872 A KR20060115872 A KR 20060115872A
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South Korea
Prior art keywords
dielectric
lanthanum
layer
lutetium
dielectric layer
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KR1020067009194A
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English (en)
Korean (ko)
Inventor
라빈드라나스 드로오패드
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프리스케일 세미컨덕터, 인크.
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Publication of KR20060115872A publication Critical patent/KR20060115872A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69396—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
KR1020067009194A 2003-11-12 2004-10-22 높은 ｋ 유전체 필름 Ceased KR20060115872A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US51976503P 2003-11-12 2003-11-12
US60/519,765 2003-11-12
US10/895,552 2004-07-21
US10/895,552 US7105886B2 (en) 2003-11-12 2004-07-21 High K dielectric film

Publications (1)

Publication Number Publication Date
KR20060115872A true KR20060115872A (ko) 2006-11-10

Family

ID=34556567

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067009194A Ceased KR20060115872A (ko) 2003-11-12 2004-10-22 높은 ｋ 유전체 필름

Country Status (5)

Country Link
US (1) US7105886B2 (enExample)
EP (1) EP1714324A4 (enExample)
JP (1) JP4709765B2 (enExample)
KR (1) KR20060115872A (enExample)
WO (1) WO2005052991A2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105886B2 (en) * 2003-11-12 2006-09-12 Freescale Semiconductor, Inc. High K dielectric film
US6921691B1 (en) * 2004-03-18 2005-07-26 Infineon Technologies Ag Transistor with dopant-bearing metal in source and drain
US8178902B2 (en) 2004-06-17 2012-05-15 Infineon Technologies Ag CMOS transistor with dual high-k gate dielectric and method of manufacture thereof
US7592678B2 (en) * 2004-06-17 2009-09-22 Infineon Technologies Ag CMOS transistors with dual high-k gate dielectric and methods of manufacture thereof
US8399934B2 (en) * 2004-12-20 2013-03-19 Infineon Technologies Ag Transistor device
US7344934B2 (en) 2004-12-06 2008-03-18 Infineon Technologies Ag CMOS transistor and method of manufacture thereof
KR20060064264A (ko) * 2004-12-08 2006-06-13 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US7253050B2 (en) * 2004-12-20 2007-08-07 Infineon Technologies Ag Transistor device and method of manufacture thereof
US7368045B2 (en) * 2005-01-27 2008-05-06 International Business Machines Corporation Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow
US7160781B2 (en) * 2005-03-21 2007-01-09 Infineon Technologies Ag Transistor device and methods of manufacture thereof
US7361538B2 (en) * 2005-04-14 2008-04-22 Infineon Technologies Ag Transistors and methods of manufacture thereof
US20070052037A1 (en) * 2005-09-02 2007-03-08 Hongfa Luan Semiconductor devices and methods of manufacture thereof
US20070052036A1 (en) * 2005-09-02 2007-03-08 Hongfa Luan Transistors and methods of manufacture thereof
US8188551B2 (en) * 2005-09-30 2012-05-29 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US7462538B2 (en) * 2005-11-15 2008-12-09 Infineon Technologies Ag Methods of manufacturing multiple gate CMOS transistors having different gate dielectric materials
US7495290B2 (en) * 2005-12-14 2009-02-24 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US7510943B2 (en) * 2005-12-16 2009-03-31 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US20070237697A1 (en) * 2006-03-31 2007-10-11 Tokyo Electron Limited Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
US7879739B2 (en) * 2006-05-09 2011-02-01 Intel Corporation Thin transition layer between a group III-V substrate and a high-k gate dielectric layer
KR100803663B1 (ko) * 2006-06-29 2008-02-19 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
US7858459B2 (en) * 2007-04-20 2010-12-28 Texas Instruments Incorporated Work function adjustment with the implant of lanthanides
JP5100313B2 (ja) * 2007-10-31 2012-12-19 株式会社東芝 酸化ランタン化合物の製造方法
JP5104373B2 (ja) * 2008-02-14 2012-12-19 日本ゼオン株式会社 位相差板の製造方法
JPWO2011042955A1 (ja) * 2009-10-06 2013-02-28 ルネサスエレクトロニクス株式会社 半導体装置
JP5688526B2 (ja) * 2010-12-20 2015-03-25 秋田県 強磁性積層構造の製造方法
US20130277765A1 (en) 2012-04-23 2013-10-24 Globalfoundries Inc. Semiconductor device including graded gate stack, related method and design structure
US10361282B2 (en) * 2017-05-08 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a low-K spacer
CN117174578A (zh) * 2022-05-27 2023-12-05 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

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US20030152813A1 (en) * 1992-10-23 2003-08-14 Symetrix Corporation Lanthanide series layered superlattice materials for integrated circuit appalications
AU2001234468A1 (en) * 2000-01-19 2001-07-31 North Carolina State University Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same
US6559051B1 (en) * 2000-10-05 2003-05-06 Advanced Micro Devices, Inc. Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors
US6660660B2 (en) * 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
US20020089023A1 (en) * 2001-01-05 2002-07-11 Motorola, Inc. Low leakage current metal oxide-nitrides and method of fabricating same
US6541280B2 (en) * 2001-03-20 2003-04-01 Motorola, Inc. High K dielectric film
US7323422B2 (en) * 2002-03-05 2008-01-29 Asm International N.V. Dielectric layers and methods of forming the same
US7221586B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US7105886B2 (en) * 2003-11-12 2006-09-12 Freescale Semiconductor, Inc. High K dielectric film

Also Published As

Publication number Publication date
US20050101159A1 (en) 2005-05-12
EP1714324A2 (en) 2006-10-25
JP2007529112A (ja) 2007-10-18
US7105886B2 (en) 2006-09-12
WO2005052991A2 (en) 2005-06-09
WO2005052991A3 (en) 2006-06-08
JP4709765B2 (ja) 2011-06-22
EP1714324A4 (en) 2010-08-11

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