KR20060113891A - 소자의 작동에 있어 비증발성 게터 재료를 필요로 하는소자를 제조하는 방법 - Google Patents
소자의 작동에 있어 비증발성 게터 재료를 필요로 하는소자를 제조하는 방법 Download PDFInfo
- Publication number
- KR20060113891A KR20060113891A KR1020067006260A KR20067006260A KR20060113891A KR 20060113891 A KR20060113891 A KR 20060113891A KR 1020067006260 A KR1020067006260 A KR 1020067006260A KR 20067006260 A KR20067006260 A KR 20067006260A KR 20060113891 A KR20060113891 A KR 20060113891A
- Authority
- KR
- South Korea
- Prior art keywords
- getter material
- evaporable getter
- support
- requires
- mems
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/106—Other heavy metals refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/20—Other heavy metals
- C23G1/205—Other heavy metals refractory metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
- H01J7/18—Means for absorbing or adsorbing gas, e.g. by gettering
- H01J7/183—Composition or manufacture of getters
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Micromachines (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Optical Head (AREA)
- Optical Integrated Circuits (AREA)
- Gyroscopes (AREA)
- Treatment Of Liquids With Adsorbents In General (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (9)
- 소자의 작동에 있어 비증발성 게터 재료를 필요로 하는 소자를 제조하는 방법으로서,비증발성 게터 재료(17; 32)의 증착물을 지지부(10) 상에 형성하는 단계;비증발성 게터 재료의 상기 증착물을 갖춘 상기 지지부를 적어도 산성 또는 염기성 용액으로 처리하는 단계; 및상기 지지부를 상기 소자의 작동이 비증발성 게터 재료의 존재를 필요로 하는 상기 소자의 내부 공간에 도입하거나, 상기 증착물을 상기 공간과 접촉하는 방식으로, 상기 소자(20; 30)의 상기 내부 공간을 형성하는 상기 표면의 일부분 이상을 형성하기 위해 이용하는 단계를 포함하는,비증발성 게터 재료를 필요로 하는 소자를 제조하는 방법.
- 제 1 항에 있어서,상기 용액은 암모니아를 포함하는,비증발성 게터 재료를 필요로 하는 소자를 제조하는 방법.
- 제 1 항에 있어서,상기 용액은 염산, 불화수소산, 질산 및 황산 중에서 선택되는 산을 포함하는,비증발성 게터 재료를 필요로 하는 소자를 제조하는 방법.
- 제 1 항에 있어서,산성 또는 염기성 용액으로의 처리는 염기성 용액의 암모니아로의 제 1 처리 및 산성 용액의 염산으로의 제 2 처리를 포함하는,비증발성 게터 재료를 필요로 하는 소자를 제조하는 방법.
- 제 1 항에 있어서,상기 소자는 소형 기계, 전자기계 또는 광소자인.비증발성 게터 재료를 필요로 하는 소자를 제조하는 방법.
- 제 5 항에 있어서,상기 지지부는 소형 기계 또는 전자기계 소자의 상기 밀폐 지지부(22)인,비증발성 게터 재료를 필요로 하는 소자를 제조하는 방법.
- 제 5 항에 있어서,상기 지지부의 상부에 소형 기계, 전자기계 또는 광소자의 활성 부품이 구성되는 지지부(33)인,비증발성 게터 재료를 필요로 하는 소자를 제조하는 방법.
- 제 1 항에 있어서,상기 비증발성 게터 재료는 지르코늄, 티타늄, 탄탈, 니오븀, 하프뮴 및 이트륨, 또는 금속들 중 하나 이상의 전이 금속, 희토류 및 알루미늄 중에서 선택되는 하나 이상의 원소들의 합금 중에서 선택되는,비증발성 게터 재료를 필요로 하는 소자를 제조하는 방법.
- 제 1 항에 있어서,상기 게터 재료 증착물은 스퍼터링에 의해 형성되는,비증발성 게터 재료를 필요로 하는 소자를 제조하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2003A002209 | 2003-11-14 | ||
IT002209A ITMI20032209A1 (it) | 2003-11-14 | 2003-11-14 | Processo per la produzione di dispositivi che richiedono per il loro funzionamento un materiale getter non evaporabile. |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060113891A true KR20060113891A (ko) | 2006-11-03 |
KR100742422B1 KR100742422B1 (ko) | 2007-07-24 |
Family
ID=34586992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067006260A KR100742422B1 (ko) | 2003-11-14 | 2004-11-09 | 소자의 작동에 있어 비증발성 게터 재료를 필요로 하는소자를 제조하는 방법 |
Country Status (18)
Country | Link |
---|---|
EP (1) | EP1685269B1 (ko) |
JP (1) | JP4865562B2 (ko) |
KR (1) | KR100742422B1 (ko) |
CN (1) | CN100554496C (ko) |
AU (1) | AU2004288886B2 (ko) |
BR (1) | BRPI0413417B1 (ko) |
CA (1) | CA2533643C (ko) |
DE (1) | DE602004022078D1 (ko) |
DK (1) | DK1685269T3 (ko) |
ES (1) | ES2326812T3 (ko) |
IL (1) | IL173224A (ko) |
IT (1) | ITMI20032209A1 (ko) |
MX (1) | MXPA06002390A (ko) |
MY (1) | MY139594A (ko) |
NO (1) | NO20060595L (ko) |
PL (1) | PL1685269T3 (ko) |
TW (1) | TWI261930B (ko) |
WO (1) | WO2005047558A2 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITMI20052343A1 (it) * | 2005-12-06 | 2007-06-07 | Getters Spa | Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti |
FR2898597B1 (fr) * | 2006-03-16 | 2008-09-19 | Commissariat Energie Atomique | Encapsulation dans une cavite hermetique d'un compose microelectronique, notamment d'un mems |
FR2903678B1 (fr) | 2006-07-13 | 2008-10-24 | Commissariat Energie Atomique | Microcomposant encapsule equipe d'au moins un getter |
FR2922202B1 (fr) * | 2007-10-15 | 2009-11-20 | Commissariat Energie Atomique | Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication. |
DE102008060796B4 (de) * | 2008-11-18 | 2014-01-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Ausbilden einer Mikro-Oberflächenstruktur sowie zum Herstellen eines mikroelektromechanischen Bauelements, Mikro-Oberflächenstruktur sowie mikroelektromechanisches Bauelement mit einer solchen Struktur |
CN102040186B (zh) * | 2010-11-09 | 2012-11-21 | 北京自动化控制设备研究所 | 一种高真空陶瓷lcc封装方法 |
JP2015002414A (ja) * | 2013-06-14 | 2015-01-05 | セイコーインスツル株式会社 | 電子デバイス |
CN105366624B (zh) * | 2014-07-30 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
CN109680249A (zh) * | 2019-01-25 | 2019-04-26 | 苏州大学 | 非蒸散型薄膜吸气剂及其制备方法 |
CN113061854A (zh) * | 2021-03-19 | 2021-07-02 | 上海松尚国际贸易有限公司 | 利用amat pvd腔体制备吸气剂的方法及其薄膜吸气剂 |
CN113699425B (zh) * | 2021-08-31 | 2022-07-15 | 中国科学技术大学 | 非蒸散型四元Ti-Zr-V-Cu真空吸气剂薄膜及其制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1015645B (zh) * | 1989-09-07 | 1992-02-26 | 安守环 | 非蒸散型低温激活吸气剂及其制造工艺 |
JPH08210251A (ja) * | 1995-02-06 | 1996-08-20 | Toshiba Corp | ゲッターポンプとその製造方法 |
IT1283484B1 (it) * | 1996-07-23 | 1998-04-21 | Getters Spa | Metodo per la produzione di strati sottili supportati di materiale getter non-evaporabile e dispositivi getter cosi' prodotti |
JPH1157466A (ja) * | 1997-08-20 | 1999-03-02 | Sumitomo Metal Ind Ltd | リボン状ゲッタ材とその製造方法 |
TW533188B (en) * | 2001-07-20 | 2003-05-21 | Getters Spa | Support for microelectronic, microoptoelectronic or micromechanical devices |
US6923625B2 (en) * | 2002-01-07 | 2005-08-02 | Integrated Sensing Systems, Inc. | Method of forming a reactive material and article formed thereby |
-
2003
- 2003-11-14 IT IT002209A patent/ITMI20032209A1/it unknown
-
2004
- 2004-11-09 KR KR1020067006260A patent/KR100742422B1/ko active IP Right Grant
- 2004-11-09 PL PL04799409T patent/PL1685269T3/pl unknown
- 2004-11-09 DE DE602004022078T patent/DE602004022078D1/de active Active
- 2004-11-09 ES ES04799409T patent/ES2326812T3/es active Active
- 2004-11-09 AU AU2004288886A patent/AU2004288886B2/en not_active Ceased
- 2004-11-09 MX MXPA06002390A patent/MXPA06002390A/es active IP Right Grant
- 2004-11-09 BR BRPI0413417-6A patent/BRPI0413417B1/pt not_active IP Right Cessation
- 2004-11-09 CN CNB2004800256050A patent/CN100554496C/zh active Active
- 2004-11-09 WO PCT/IT2004/000615 patent/WO2005047558A2/en active Application Filing
- 2004-11-09 JP JP2006539078A patent/JP4865562B2/ja active Active
- 2004-11-09 CA CA002533643A patent/CA2533643C/en active Active
- 2004-11-09 DK DK04799409T patent/DK1685269T3/da active
- 2004-11-09 EP EP04799409A patent/EP1685269B1/en active Active
- 2004-11-10 TW TW093134335A patent/TWI261930B/zh active
- 2004-11-10 MY MYPI20044709A patent/MY139594A/en unknown
-
2006
- 2006-01-18 IL IL173224A patent/IL173224A/en active IP Right Grant
- 2006-02-06 NO NO20060595A patent/NO20060595L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN1846012A (zh) | 2006-10-11 |
MY139594A (en) | 2009-10-30 |
DK1685269T3 (da) | 2009-11-02 |
PL1685269T3 (pl) | 2009-11-30 |
KR100742422B1 (ko) | 2007-07-24 |
EP1685269B1 (en) | 2009-07-15 |
WO2005047558A3 (en) | 2005-10-13 |
NO20060595L (no) | 2006-06-27 |
DE602004022078D1 (de) | 2009-08-27 |
BRPI0413417B1 (pt) | 2014-10-14 |
IL173224A (en) | 2010-05-31 |
ITMI20032209A1 (it) | 2005-05-15 |
WO2005047558A2 (en) | 2005-05-26 |
AU2004288886A1 (en) | 2005-05-26 |
JP4865562B2 (ja) | 2012-02-01 |
JP2007523467A (ja) | 2007-08-16 |
ES2326812T3 (es) | 2009-10-20 |
TW200527692A (en) | 2005-08-16 |
CN100554496C (zh) | 2009-10-28 |
EP1685269A2 (en) | 2006-08-02 |
IL173224A0 (en) | 2006-06-11 |
BRPI0413417A (pt) | 2006-10-10 |
CA2533643A1 (en) | 2005-05-26 |
AU2004288886B2 (en) | 2008-06-12 |
TWI261930B (en) | 2006-09-11 |
CA2533643C (en) | 2010-01-12 |
MXPA06002390A (es) | 2006-06-20 |
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