KR20060111129A - Organic light emitting display device of top emission type - Google Patents

Abstract

An organic light emitting display device of a top emission type is provided to complement surface roughness of a conductor covered on a capping layer, thereby preventing an electric short with the conductor and a counter electrode in advance. In an organic light emitting display device of a top emission type, a reflective substrate(1) performs an optical reflection. An organic light emitting device(2) is located on one surface of the reflective substrate(1). A sealing unit(3) seals the organic light emitting device(2), and transmits the light.

Description

Organic light emitting display device of top emission type

1 is a cross-sectional view schematically illustrating an organic light emitting display device according to an exemplary embodiment of the present invention;

2 is a cross-sectional view schematically illustrating an organic light emitting display device according to another exemplary embodiment of the present invention;

3 is a diagram illustrating a pixel circuit diagram of a display unit of an organic light emitting diode display according to an exemplary embodiment of the present invention illustrated in FIG. 1.

4 to 6 are partially enlarged cross-sectional views of the A1 portion of FIG. 1, respectively, and include detailed cross-sectional views of pixels of the PM organic light emitting display device;

FIG. 7 illustrates a pixel circuit diagram of a display unit of an organic light emitting diode display according to another exemplary embodiment of the present invention illustrated in FIG. 1.

8 to 19 are partial enlarged cross-sectional views of the A1 portion of FIG. 1, respectively, and specific cross-sectional views of the pixels of the AM organic light emitting display device;

Explanation of symbols on the main parts of the drawings

1: Reflective Substrate 2: Display Part

3: sealing member 4: sealant

21: first electrode layer 22: organic light emitting layer

23: second electrode layer 100: metal substrate

110, 111 insulating film 101: insulating substrate

112: reflective film 121: semiconductor layer

122: gate insulating film 123: gate electrode

125: interlayer insulating film 126: source / drain electrode

128: planarization film 129: pixel definition film

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display, and more particularly, to a top emitting organic light emitting display that can be made to be a top emission type by a simple method.

The organic light emitting diode display has a structure in which an anode electrode, an organic light emitting layer, and a cathode electrode are sequentially stacked on a rear substrate and then sealed with a front substrate. The organic light emitting diode display may implement an image in the direction of the rear substrate and / or the front substrate.

Among these, in order to apply the top emission type that implements an image in the direction of the front substrate, an anode electrode positioned below is formed as a reflective electrode to improve light efficiency. Otherwise, the light extraction efficiency of the light emitted from the organic light emitting film is significantly lowered, which makes it somewhat unreasonable for use as a display device.

On the other hand, since the anode wood is to supply holes to the organic light emitting film, a material having a high work function should be used.

For this reason, in the conventional top emission type organic light emitting display, when forming an anode electrode, a metal film such as Al capable of light reflection is first formed, and a transparent conductive film such as ITO or IZO is formed thereon to match the work function thereon. It was.

However, in the case of such a double film structure, since the metal film and the transparent conductive film must be patterned after being deposited or sputtered, there is a problem that the process becomes complicated. In addition, after the Al metal film is formed with the anode electrode, the transparent conductive film is formed, whereby the luminous efficiency is lowered due to the contact resistance between Al and the transparent conductive film.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art as described above, and an object thereof is to provide an organic light emitting display device which can achieve a top emission structure without a reflective electrode.

In order to achieve the above object, the present invention includes a reflective substrate capable of light reflection, an organic light emitting element positioned on one surface of the reflective substrate, and a sealing member capable of sealing the organic electroluminescent element and allowing light transmission. An organic light emitting display device is provided.

Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

1 is a schematic cross-sectional view of an organic light emitting diode display according to an exemplary embodiment of the present invention.

As shown in FIG. 1, an organic light emitting diode display according to an exemplary embodiment of the present invention includes a reflective substrate 1 capable of light reflection, a display unit 2 formed on the reflective substrate 1, And a sealing member 3 for sealing the display portion 2.

In the embodiment according to FIG. 1, the sealing member 3 is formed of a transparent substrate such as a glass substrate or a plastic material, the edge region of which is bonded to the reflective substrate 1 by the sealant 4. The inside of the sealing member 3 may be provided with a transparent moisture absorbent (not shown) or the like to absorb moisture in the space between the sealing member 3 and the reflective substrate 1.

Meanwhile, the sealing member may be formed in a film shape as shown in FIG. 2 in addition to the substrate type as shown in FIG. 1.

In another preferred embodiment of the present invention, the sealing member 3 'on the film may be provided with at least one inorganic layer and at least one polymer layer, which will be described below.

As the inorganic layer forming the film-like sealing member 3 ', a transparent blocking material may be used, but is not necessarily limited thereto. As the inorganic layer, metal oxide, metal nitride, metal carbide, metal oxynitride and compounds thereof may be used. As the metal oxide, silica, alumina, titania, indium oxide, tin oxide, indium tin oxide, barium oxide, and compounds thereof may be used. Aluminum nitride, silicon nitride, and compounds thereof may be used as the metal nitride. Silicon carbide may be used as the metal carbide, and silicon oxynitride may be used as the metal oxynitride. In addition to the inorganic layer, silicon may be used, or ceramic derivatives of silicon and metal may be used. In addition, any inorganic material that can block the penetration of moisture and oxygen, such as diamond-like carbon (DLC) can be used.

In addition to the inorganic layer, a polymer layer may be further provided. The polymer layer may be an organic polymer, an inorganic polymer, an organometallic polymer, a hybrid organic / inorganic polymer, or the like.

The structure of the film-like sealing member 3 'as described above can be variously applied in addition to this. In the present invention, the film-like sealing member 3 'is preferably formed of a thin film in order to realize an ultra-thin shape, and in addition to the structures of the inorganic layer and the polymer layer described above, as long as it can form the opposite film of the thin film, Applicable

As the sealing member, hereinafter, for convenience of explanation, the description will be made mainly on the sealing member 3 on the substrate of FIG. 1, but of course, the sealing member 3 ′ as shown in FIG.

The present invention thus formed is a top emission type in which light emitted from the display unit 2, that is, the image is embodied in the direction of the arrow of FIGS. 1 and 2.

3 illustrates a pixel circuit diagram of the display unit 2 of the organic light emitting diode display according to the exemplary embodiment of FIG. 1, which is a circuit diagram of a PM organic light emitting diode display.

The PM organic light emitting diode display is arranged such that a plurality of data lines and a scan line intersect each other, and an organic light emitting diode (OLED) is provided at a point where each of the plurality of data lines Data and scan lines intersect each other. Each organic light emitting diode OLED is driven according to a scan signal and a data signal.

The PM organic light emitting display device may be implemented on the reflective substrate 1 according to the present invention. FIGS. 4 to 6 illustrate cross-sectional views of specific embodiments.

4 through 6 are partially enlarged cross-sectional views of the portion A1 of FIG. 1 and detailed cross-sectional views of pixels of the PM OLED.

First, the PM organic electroluminescent display shown in FIG. 2 is formed on the reflective substrate 1.

The reflective substrate 1 may be provided as a metal substrate 100 having an insulating film 110 formed on at least one surface thereof.

The metal substrate 100 may be provided with a metal foil, and stainless steel, Ti, Mo, Invar alloy, Inconel alloy, Kovar alloy, and the like may be used.

The metal substrate 100 may be planarized after cleaning the surface thereof. The planarization may be performed using a chemical-mechanical polishing (CMP) method. In addition, a spin-on-glass (SOG) layer may be formed by spin coating a dielectric material.

As shown in FIG. 2, an insulating film 110 is formed on the surface of the flattened metal substrate 100.

The insulating film 110 is formed of titanium nitride (TiN), titanium aluminum nitride (TiAlN), silicon carbide (SiC), and the like, which serve to block metal elements that may diffuse out of the metal substrate 100. It may be provided to include at least one of the compounds.

In addition, an organic layer for planarization may be formed, and a buffer layer may be further formed of silicon nitride or silicon oxide.

After the insulating film 110 is formed in this manner, an organic light emitting diode OLED is formed on the insulating film 110. That is, the first electrode layer 21 is formed on the insulating film 110, and the organic light emitting layer 22 and the second electrode layer 23 are sequentially formed on the first electrode layer 21. An inter-insulating layer 24 may be further interposed between the lines of the first electrode layer 21, and the first electrode layer 21 and the second electrode layer 23 may be perpendicular to each other. Can be formed.

The first electrode layer 21 may function as an anode electrode, and the second electrode layer 23 may function as a cathode electrode. Referring to FIG. 3, the first electrode layer 21 may be a data line. (Data), and the second electrode layer 23 may be a scan line. In this case, the first electrode layer 21 may be formed by forming ITO, IZO, ZnO, In 2 O 3, or the like having a high work function. The second electrode layer 23 is a single layer or a composite layer using Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, LiF, Ba, Ca, and compounds thereof having a small work function. After the deposition, the auxiliary electrode layer or the bus electrode line may be formed on the transparent conductive material such as ITO, IZO, ZnO, or In 2 O 3 to be transparent. Formation of the first electrode layer 21 and the second electrode layer 23 is not necessarily limited thereto, and various materials may be applied according to design conditions.

The present invention does not need to form the first electrode layer 21 as a reflective electrode even in the case of forming the top emission structure. Thus, the top emission structure can be simply formed.

The polarity of the first electrode layer 21 and the second electrode layer 23 may be reversed. That is, the first electrode layer 21 may function as a cathode electrode, and the second electrode layer 23 may function as an anode electrode. In this case, the first electrode layer 21 is a single layer using Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, LiF, Ba, Ca, and compounds thereof having a small work function. Alternatively, it may be deposited to form a composite layer, to be a semi-permeable electrode. The second electrode layer 23 may also be formed by forming transparent ITO, IZO, ZnO, or In 2 O 3.

The first electrode layer 21 and the second electrode layer 23 are not necessarily provided in a stripe pattern orthogonal to each other, and may be patterned in various shapes to achieve predetermined surface emission.

In addition, the first electrode layer 21 and the second electrode layer 23 are not limited to being formed of the above-described materials, and may be formed of a conductive organic material, a conductive paste, or the like.

In addition, although not shown in the drawing, the first electrode layer 21 is a separating layer made of an insulating material in order to obtain a patterning effect of the second electrode layer 23 as an upper electrode. This may be further provided.

The organic light emitting layer 22 may be a low molecular or high molecular organic layer. When the low molecular organic layer is used, a hole injection layer (HIL), a hole transport layer (HTL), and an organic emission layer (EML) may be used. ), An electron transport layer (ETL), an electron injection layer (EIL), or the like, may be formed by stacking a single or a complex structure, and the usable organic material may be copper phthalocyanine (CuPc). , N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), Various applications are possible, including tris-8-hydroxyquinoline aluminum (Alq3). These low molecular weight organic layers are formed by the vacuum deposition method.

In the case of the polymer organic layer, the structure may include a hole transporting layer (HTL) and a light emitting layer (EML). In this case, PEDOT is used as the hole transporting layer, and polyvinylvinylene (PPV) and polyfluorene are used as the light emitting layer. Polymer organic materials such as (Polyfluorene) are used and can be formed by screen printing or inkjet printing.

After the organic light emitting element OLED is formed, it is sealed by the sealing member 3 as described above. The sealing member 3 may include a transparent substrate 30 made of glass or plastic and a polarizing film 32 provided on the surface thereof. The polarizing film 32 is not an essential component and may not be provided depending on the design.

FIG. 5 is a cross-sectional view of a PM organic light emitting diode display according to another exemplary embodiment, in which an insulating substrate 101 having a reflective film 112 is used as the reflective substrate 1.

Referring to FIG. 5, a reflective film 112 may be formed over the entire surface of the insulating substrate 101, and an insulating film 111 may be formed to cover the reflective film 112.

The insulating substrate 101 may be formed of a glass material or a plastic material, and the reflective film 112 may form a surface film of a metal material having a high reflectance. The insulating film 111 on the reflective film 112 may function not only to planarize the surface of the reflective substrate 1 but also to block the penetration of impurities from the outside and the penetration of external air. The insulating layer 111 may be implemented as a single layer or a composite layer of an inorganic material and an organic material.

The other structure is the same as that of the embodiment of FIG. 4 described above, and thus a detailed description thereof will be omitted.

On the other hand, the reflective film 112 is not only interposed between the insulating film 111 and the insulating substrate 101, but can be formed on the lower surface of the insulating substrate 101, as shown in FIG.

That is, the insulating film 111 is formed on the upper surface of the insulating substrate 101 as the buffer and the planarization layer, and the reflective film 112 is formed on the lower surface of the insulating substrate 101.

Even in these embodiments, as described above, the top emission type can be implemented simply.

FIG. 7 illustrates an example of a pixel circuit diagram of the display unit 2 of the organic light emitting diode display according to another exemplary embodiment of the present invention illustrated in FIG. 1. FIG.

Referring to FIG. 7, each pixel of an AM organic light emitting diode display according to an exemplary embodiment of the present invention may include a switching TFT M2, at least two thin film transistors of a driving TFT M1, and a storage capacitor Cst. ) And an organic light emitting diode (OLED).

The switching TFT M2 is turned on / off by a scan signal applied to the scan line Scan to transfer a data signal applied to the data line Data to the storage capacitor Cst and the driving TFT M1. The driving TFT M1 determines the amount of current flowing into the organic light emitting element OLED according to the data signal transmitted through the switching TFT M2. The storage capacitor Cst stores a data signal transmitted through the switching TFT M2 for one frame.

In the circuit diagram according to FIG. 7, the driving TFT M1 and the switching TFT M2 are illustrated as PMOS TFTs, but the present invention is not limited thereto, and at least one of the driving TFT M1 and the switching TFT M2 is not limited thereto. Can be formed of an NMOS TFT, of course. In addition, the number of the thin film transistors and capacitors as described above is not necessarily limited thereto, and of course, a larger number of thin film transistors and capacitors may be provided.

8 illustrates an example of a cross-sectional structure of the AM organic light emitting display device.

As shown in FIG. 8, an AM organic light emitting diode display according to another exemplary embodiment of the present invention is formed on the reflective substrate 1. The reflective substrate 1 may be provided as a metal substrate 100 having an insulating film 110 formed on at least one surface thereof, as in the embodiment of FIG. 4.

A selection driving circuit including a TFT and a capacitor is formed on the insulating film 110. In FIG. 8, the driving TFT M1 and the storage capacitor Cst are shown.

Referring to FIG. 8, a semiconductor active layer 121 is formed on the insulating layer 110.

The semiconductor active layer 121 may be an inorganic semiconductor or an organic semiconductor.

The inorganic semiconductor may include CdS, GaS, ZnS, CdSe, CaSe, ZnSe, CdTe, SiC, and Si. As in the present embodiment, when the metal substrate 100 is used, amorphous silicon is formed on the insulating film 110, and then crystallized to form polysilicon, and then patterned to form an active layer ( 121). The crystallization of amorphous silicon is solid phase crystallization (SPC), laser crystallization, sequential lateral solidification (SLS), metal induced crystallization, metal induced lateral crystallization Etc. may be used, in addition, various crystallization methods may be used. Since the present invention is a metal substrate 100 even during such crystallization, a high temperature process can be easily applied.

On the other hand, as the organic semiconductor material, pentacene (tetracene), tetracene (tetracene), anthracene (anthracene), naphthalene (alpha) 6- thiophene, alpha-4-thiophene, perylene (perylene) and Derivatives thereof, rubrene and derivatives thereof, coronene and derivatives thereof, perylene tetracarboxylic diimide and derivatives thereof, perylene tetracarboxylic hydride dianhydride) and derivatives thereof, oligoacenes and derivatives thereof of naphthalene, oligothiophenes and derivatives thereof of alpha-5-thiophene, phthalocyanine and derivatives thereof, with or without metal, naphthalenetetracarboxylic Naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, pyromellitic dianhydride The beads and their derivatives, pyromellitic Pyro tick diimide and its derivatives, conjugated polymer containing thiophene and its derivatives, fluorene and its derivatives and polymer containing fluorene and the like may be used.

If necessary, the semiconductor active layer 121 may dop its source / drain regions to P-type or N-type, and in the case of N-type, dopant LDD regions between the source / drain and channel regions.

After the semiconductor active layer 121 is formed, the gate insulating layer 122 is formed to cover the semiconductor active layer 121, and the gate electrode 123 is formed to correspond to the channel region of the semiconductor active layer 121. In this case, the lower electrode 124 of the storage capacitor Cst may also be formed at the same time.

Next, an interlayer insulating layer 125 is formed to cover the entire substrate, and after contact holes are formed in the interlayer insulating layer 125, a source / drain electrode 126 is formed on the interlayer insulating layer 125. The source / drain electrodes 126 are in contact with the semiconductor active layer 121 through contact holes. In this case, the upper electrode 127 of the storage capacitor Cst may also be formed at the same time.

The structure of the TFT is not necessarily limited to the exemplary embodiment of FIG. 8, and various thin film transistor structures such as a bottom gate structure may be applicable.

After the thin film transistor TFT is formed, the planarization film 128 is formed to cover the thin film transistor TFT. The first electrode layer 21 of the organic light emitting diode OLED is formed on the planarization film 128. ) Is formed. The via hole 128a is formed in the planarization film 128 so that the first electrode layer 21 contacts one of the source / drain electrodes 126 through the via hole 128a.

Next, after the pixel definition layer 129 is formed to cover the planarization layer 128 and the first electrode layer 21, the opening 129a is exposed so that a predetermined portion of the first electrode layer 21 is exposed on the pixel definition layer 129. ).

The organic light emitting layer 22 and the second electrode layer 23 are sequentially formed on the exposed first electrode layer 21. The structure of the AM organic light emitting display device can be variously formed.

The gate insulating layer 122, the interlayer insulating layer 125, the planarization layer 128, and the pixel definition layer 129 may be formed of an organic material and / or an inorganic material.

As the inorganic substance, SiO 2, SiN x, SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , HfO ₂ , ZrO ₂ , BST, PZT and the like are possible, and SiO 2, SiNx, SiON and the like are more preferable.

As the organic material, a polymer material can be used. Examples thereof include general general-purpose polymers (PMMA, PS), polymer derivatives having a phenol group, acrylic polymers, imide polymers, arylether polymers, amide polymers, fluorine polymers, and p. Xylene polymers, vinyl alcohol polymers and blends thereof.

In addition, these insulating films can also be an inorganic-organic laminated film.

The first electrode layer 21 of the OLED may be patterned in pixel units, and the second electrode layer 23 may be formed over the entire display area. However, the present invention is not limited thereto, and the second electrode layer 23 may also be patterned in units of pixels.

When the first electrode layer 21 functions as an anode electrode and the second electrode layer 23 functions as a cathode electrode, the first electrode layer 21 has a high work function and transparent ITO and IZO. , ZnO, In2O3 or the like can be formed. The second electrode layer 23 is a single layer or a composite layer using Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, LiF, Ba, Ca, and compounds thereof having a small work function. After the deposition, the auxiliary electrode layer or the bus electrode line may be formed on the transparent conductive material such as ITO, IZO, ZnO, or In 2 O 3 to be transparent. Formation of the first electrode layer 21 and the second electrode layer 23 is not necessarily limited thereto, and various materials may be applied according to design conditions.

The present invention does not need to form the first electrode layer 21 as a reflective electrode even in the case of forming the top emission structure. Thus, the top emission structure can be simply formed.

The polarity of the first electrode layer 21 and the second electrode layer 23 may be reversed. That is, the first electrode layer 21 may function as a cathode electrode, and the second electrode layer 23 may function as an anode electrode. In this case, the first electrode layer 21 is a single layer using Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, LiF, Ba, Ca, and compounds thereof having a small work function. Alternatively, the composite layer may be deposited to form a semi-transmissive electrode, and the second electrode layer 23 may also be formed by forming transparent ITO, IZO, ZnO, or In 2 O 3.

Since the organic light emitting layer 22 is the same as in the above-described embodiment, detailed description thereof will be omitted.

After the organic light emitting element OLED is formed, it is sealed by the sealing member 3 as described above. The sealing member 3 may include a transparent substrate 30 made of glass or plastic and a polarizing film 32 provided on the surface thereof. The polarizing film 32 is not an essential component and may not be provided depending on the design.

In the above-described AM organic light emitting display device, the present invention uses the metal substrate 100 as a reflecting plate so that the first light emitting layer 21 can be formed as a front light emitting structure without using a separate reflective electrode. do.

In the AM organic light emitting display, as shown in FIG. 9, the insulating substrate 101 having the reflective film 112 is used as the reflective substrate 1.

Referring to FIG. 9, a reflective film 112 may be formed over an entire surface of the insulating substrate 101, and an insulating film 111 may be formed to cover the reflective film 112.

The insulating substrate 101 may be formed of a glass material or a plastic material, and the reflective film 112 may form a surface film of a metal material having a high reflectance. The insulating film 111 on the reflective film 112 may function not only to planarize the surface of the reflective substrate 1 but also to block the penetration of impurities from the outside and the penetration of external air. The insulating layer 111 may be implemented as a single layer or a composite layer of an inorganic material and an organic material.

Since the other structure is the same as the above-mentioned embodiment of FIG. 8, detailed description is omitted.

On the other hand, the reflective film 112 is not only interposed between the insulating film 111 and the insulating substrate 101, but can be formed on the lower surface of the insulating substrate 101, as shown in FIG.

That is, the insulating film 111 is formed on the upper surface of the insulating substrate 101 as the buffer and the planarization layer, and the reflective film 112 is formed on the lower surface of the insulating substrate 101.

Even in these embodiments, as described above, the top emission type can be implemented simply.

FIG. 11 is a cross-sectional view of an AM organic light emitting diode display according to another embodiment of the present invention. The number of insulating films is reduced.

That is, after the second opening 128b is formed in the planarization film 128, the first electrode layer 21 is formed on the interlayer insulating film 125 exposed through the second opening 128b, and then, As described above, the pixel definition film 129, the organic light emitting layer 22, and the second electrode layer 23 are sequentially formed.

Also in this case, as shown in FIG. 12, an insulating substrate 101 in which the reflective film 112 and the insulating film 111 are sequentially formed may be used, and as shown in FIG. 13, the reflective film 112 may be disposed on the lower surface. The insulating substrate 101 on which the insulating film 111 is formed may be used.

FIG. 14 illustrates another embodiment of an AM organic light emitting display device, in which the number of insulating layers between the reflective substrate 1 and the organic light emitting layer 22 is further reduced.

That is, the third opening 125a is formed in the interlayer insulating film 125, and the first electrode layer 21 is formed on the gate insulating film 122 exposed through the third opening 125a. The pixel definition film 129, the organic light emitting layer 22, and the second electrode layer 23 are sequentially formed as described above.

In this case as well, as shown in FIG. 15, an insulating substrate 101 in which the reflective film 112 and the insulating film 111 are sequentially formed may be used on the upper surface, and as shown in FIG. 16, the reflective film 112 may be used on the lower surface. ) And an insulating substrate 101 having an insulating film 111 formed thereon may be used.

FIG. 17 illustrates another embodiment of an AM organic light emitting display device, in which a fourth opening 122a is formed in the gate insulating film 122, and the fourth opening 122a is formed on the insulating film 110 exposed through the fourth opening 122a. After the first electrode layer 21 is formed, the pixel defining layer 129, the organic light emitting layer 22, and the second electrode layer 23 are sequentially formed as described above.

In this case, similarly, as shown in FIG. 18, an insulating substrate 101 in which the reflective film 112 and the insulating film 111 are sequentially formed can be used, and as shown in FIG. 19, the reflective film 112 can be used as shown in FIG. 19. ) And an insulating substrate 101 having an insulating film 111 formed thereon may be used.

The present invention is not necessarily limited to the structure of the organic light emitting diode display described above, and of course, various modifications can be made.

In addition, the present invention can be applied to various flat panel display devices such as an organic light emitting display device and a liquid crystal display device, as well as an electron emission display device.

According to the present invention as described above, it is possible to compensate the surface roughness of the conductor covered with the capping layer, thereby preventing the electrical short between the conductor and the counter electrode in advance.

The present invention, when printing a conductor or an electrode using a conductive paste, has a nonuniform thickness and, when peaks appear, thereby preventing an electrical short circuit with other electrodes insulated thereon.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (10)

Reflective substrate capable of light reflection; An organic light emitting diode positioned on one surface of the reflective substrate; And And a sealing member sealing the organic electroluminescent element and capable of light transmission. The method of claim 1, The organic light emitting device, A first electrode provided as a transparent electrode; An emission layer covering at least the first electrode; And And a second electrode formed on at least the light emitting layer and provided as a transparent electrode and insulated from the first electrode. The method of claim 2, And the first electrode is an anode electrode. The method of claim 2, Further comprising a selection driving circuit located on one surface of the reflective substrate, And wherein the selection driving circuit is electrically connected to a first electrode of the organic light emitting diode. The method of claim 4, wherein An insulating film covering the selection driving circuit; And the first electrode is formed on the insulating layer. The method of claim 4, wherein The selection driving circuit includes a plurality of conductive layers, Insulation layers are positioned between the conductive layers of the selection driving circuit and on the selection driving circuit, respectively. The first electrode is provided on any one of the insulating film, The insulating layer covering the first electrode of the insulating layers has an opening to expose at least a portion of the first electrode. The method of claim 4, wherein The selection driving circuit includes a plurality of conductive layers, Insulating layers are positioned between the conductive layers of the selection driving circuit and on the selection driving circuit, And the insulating layers have an opening to expose at least a portion of the first electrode. The method according to any one of claims 1 to 7, And at least one surface of the reflective substrate is an insulated metal substrate. The method of claim 8, The metal substrate is at least one selected from the group consisting of stainless steel, Ti, Mo, Invar alloy, Inconel alloy, and Kovar alloy. The method according to any one of claims 1 to 7, The reflective substrate is an insulating substrate including a reflective film.

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