KR100683665B1 - Organic electro-luminescent display device - Google Patents

Abstract

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic electroluminescent display device which can improve light efficiency by preventing light emitted and emitted to the side portion so that light can be directed only in a direction in which an image is realized. In order to achieve this object, the present invention provides a substrate, a first electrode layer provided on the substrate, a second electrode layer formed to be insulated from the first electrode layer, and interposed between the first electrode layer and the second electrode layer. And an organic layer having at least a light emitting layer, and a reflecting member provided outside the first electrode layer on the substrate, provided at least in the same layer as the first electrode layer, or provided in a layer higher than the first electrode layer. An organic electroluminescent display is provided.

Description

Organic electro-luminescent display device

1 is a cross-sectional view showing a conventional active matrix organic electroluminescent display device;

2 is a plan view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention;

3 is a cross-sectional view taken along line II of FIG. 2;

4 is a plan view showing another pattern of the reflective member;

5 and 6 are cross-sectional views showing different forms of the reflective member,

7 is a plan view illustrating an organic light emitting display device according to another exemplary embodiment of the present invention;

8 and 9 are cross-sectional views illustrating different forms of the reflective member of FIG. 7.

The present invention relates to an organic light emitting display, and more particularly, to an organic light emitting display having improved light efficiency.

In general, an electroluminescent display is a self-luminous display that electrically excites fluorescent organic compounds to emit light, which can be driven at low voltage, is easy to thin, and is pointed out as a problem in liquid crystal display devices such as wide viewing angle and fast response speed. It is attracting attention as the next generation display that can solve the shortcomings.

The electroluminescent display may be classified into an inorganic electroluminescent display and an organic electroluminescent display according to whether a material forming the light emitting layer is an inorganic material or an organic material.

Meanwhile, in the organic light emitting display device, an organic film having a predetermined pattern is formed on glass or other transparent insulating substrate, and electrode layers are formed on upper and lower portions of the organic film. The organic film consists of organic compounds.

In the organic light emitting display device configured as described above, as the anode and cathode voltages are applied to the electrodes, holes injected from the electrode to which the anode voltage is applied are moved to the light emitting layer via the hole transport layer, and the electrons have a cathode voltage. It is injected from the applied electrode into the light emitting layer via the electron transport layer. In this light emitting layer, electrons and holes recombine to produce excitons, and as the excitons change from the excited state to the ground state, the fluorescent molecules in the light emitting layer emit light to form an image.

On the other hand, the active matrix active matrix (AM) type organic electroluminescent display of the organic light emitting display includes at least one thin film transistor (hereinafter, referred to as "TFT") for each pixel. These thin film transistors are used as switching elements for controlling the operation of each pixel and as driving elements for driving the pixels. The thin film transistor has a semiconductor active layer having a drain region and a source region doped with a high concentration of impurities on a substrate, and a channel region formed between the drain region and the source region, and a gate insulating film and an active layer formed on the semiconductor active layer. And a gate electrode formed on the gate insulating film above the channel region.

FIG. 1 illustrates an active matrix type organic light emitting display device. As shown in FIG. 1, a buffer layer 11 is formed on a glass substrate 10, and a thin film transistor TFT is formed thereon. And an organic electroluminescent element (OLED) is formed.

The active matrix organic light emitting display device is manufactured as follows.

The semiconductor active layer 21 having a predetermined pattern is provided on the buffer layer 11 of the substrate 10. The gate insulating layer 12 is formed on the semiconductor active layer 21 by SiO _2, and the gate electrode 22 is formed on the predetermined region on the gate insulating layer 12 by a conductive film such as MoW or Al / Cu. . The gate electrode 22 is connected to a gate line (not shown) for applying a TFT on / off signal. An inter-insulator 13 is formed on the gate electrode 22, and the source / drain electrodes 23 contact the source region and the drain region of the semiconductor active layer 21 through contact holes. Is formed. A passivation film 14 made of SiO ₂ , SiNx, or the like is formed on the source / drain electrode 23, and a planarization film (eg, acrylic, polyimide, BCB, or the like) is formed on the passivation film 14. 15) is formed.

A first electrode layer 31 serving as an anode electrode is formed on the planarization layer 15, and a pixel define layer 16 is formed of an organic material to cover the first electrode layer 31. The pixel definition layer 16 and the planarization layer 15 may be formed as a single layer.

After the predetermined opening 16a is formed in the pixel definition film 16, the organic layer 32 is formed in the region defined by the opening 16a. The organic layer 32 includes a light emitting layer. Then, the second electrode layer 33 serving as the cathode electrode is formed to cover the organic layer 32. The organic layer 32 emits light through the injection of holes and electrons at portions of the first electrode layer 31 and the second electrode layer 33 that face each other.

In the organic electroluminescent display device as described above, light is emitted from the organic layer 32 corresponding to a region where the first electrode layer 31 and the second electrode layer 33 face each other. It is also emitted in the direction of the arrow.

If the organic light emitting display device is a top emission type in which an image is formed in the direction of the second electrode layer 33, the reflective electrode is used as the first electrode layer 31. In this case, the first electrode layer is used. Only the light emitted in the direction of 31 is reflected, and the light emitted to both sides is lost as it is through the pixel defining layer 16. The same applies to the case of the bottom emission type in which the image is embodied in the direction of the first electrode layer 31, and the same is the case in the case of the double emission type in which the image is embodied in both directions of the first electrode layer 31 and the second electrode layer 33.

As such, the light emitted from the side portion of the light emitted from the organic layer 32 is lost due to failure to implement an image, thereby reducing the light efficiency of the entire display device.

The present invention is to solve the above problems, to prevent the light emitted and lost to the side portion, so that the light can be directed only in the direction in which the image is implemented to provide an organic EL display device that can improve the light efficiency Its purpose is to.

In order to achieve the above object, the present invention,

Board;

A first electrode layer provided on the substrate;

A second electrode layer formed to be insulated from the first electrode layer;

An organic layer interposed between the first electrode layer and the second electrode layer and having at least a light emitting layer; And

And a reflective member disposed outside the first electrode layer on the substrate and disposed on at least the same layer as the first electrode layer or on a layer higher than the first electrode layer. do.

According to another feature of the present invention, the height of the top surface of the reflective member may be at least equal to the height of the top surface of the light emitting layer or higher than the height of the top surface of the light emitting layer.

According to another feature of the invention, the reflective member may be formed thicker than the sum of the thickness of the first electrode layer and the organic layer.

According to another feature of the invention, the reflective member may be provided with a metal material.

According to another feature of the invention, the reflective member may be formed in a closed curve along the circumference of the organic layer.

According to another feature of the invention, the reflective member may be formed in at least one discontinuous pattern along the circumference of the organic layer.

According to another feature of the invention, the reflective member may be provided to be insulated from the first electrode layer.

According to another feature of the invention, the reflective member may be provided to be in contact with the first electrode layer.

According to still another aspect of the present invention, the substrate may include a semiconductor active layer, a gate electrode formed to be insulated from at least a channel region of the semiconductor active layer, and a source provided with a conductive material to be in contact with the source and drain regions of the semiconductor active layer, respectively. And at least one thin film transistor having a drain electrode, and the reflective member may be formed of the same material as the gate electrode.

In this case, a first insulating layer provided between the substrate and the active layer, a second insulating layer provided between the active layer and the gate electrode, and a third provided between the gate electrode and the source and drain electrodes. An insulating layer may be further provided, and the reflective member may be disposed on the second insulating layer or on the first insulating layer.

According to another feature of the invention, the reflective member may be made of the same material as the source and drain electrodes, wherein the reflective member is located on the third insulating layer, or the second insulating layer Or on the first insulating layer.

According to another feature of the invention, the substrate may include at least one thin film transistor connected to the data line and the driving line, the reflecting member may be at least one of the data line and the driving line connected to the thin film transistor.

According to another feature of the invention, the first electrode layer may include at least a transparent electrode.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a plan view illustrating a pixel part of an active matrix organic electroluminescent display device according to an exemplary embodiment of the present invention, and FIG. 3 is a cross-sectional view of the I-I.

First, as shown in FIG. 2, an organic light emitting display device according to an exemplary embodiment of the present invention has a plurality of subpixels. A single subpixel is surrounded by a scan line (Scan), a data line (Data), and a driving line (Vdd), and each subpixel includes at least two of a switching TFT TFTsw for switching and a driving TFT TFTdr for driving. The thin film transistor may include at least one storage capacitor Cst and one organic light emitting diode OLED. The number of thin film transistors and capacitors as described above is not necessarily limited thereto, and of course, a larger number of thin film transistors and capacitors may be provided.

The switching TFT TFTsw is driven by a scanning signal applied to the scan line Scan to transfer a data signal applied to the data line Data. The driving TFT TFTdr is in accordance with a data signal transmitted through the switching TFT TFTsw, that is, by the voltage difference Vgs between the gate and the source, and the organic light emitting diode OLED through the driving line Vdd. Determine the amount of current flowing into. The capacitor Cst stores a data signal transmitted through the switching TFT TFTsw for one frame.

The cross-sectional structure is as shown in FIG. 3, wherein a buffer layer 41 is formed of SiO ₂ or the like on the insulating substrate 40 of glass material, and as shown in FIG. 2 above the buffer layer 41. The same switching TFT TFTsw, a driving TFT TFTdr, a storage capacitor Cst, and an organic electroluminescent element OLED are provided. The driving TFT will be described below with reference to the TFT, but the switching TFT also has the same structure. The substrate 40 may be a transparent glass material, but is not limited thereto, and a plastic material may be used. When the glass substrate 40 is used, a buffer layer 41 is formed on the substrate 40 to prevent impurity elements from penetrating and to make the surface flat. The buffer layer 41 may be formed of SiO ₂ , and may be deposited by PECVD, APCVD, LPCVD, ECR, or the like. The buffer layer 41 can be deposited to about 3000 mW.

As shown in FIG. 3, the driving TFT TFTdr includes a semiconductor active layer 51 formed on the buffer layer 41, a gate insulating film 42 formed on the semiconductor active layer 51, and a gate insulating film 42. ) Has a gate electrode 52 above. And a source / drain electrode 53 in contact with the semiconductor active layer 51.

The semiconductor active layer 51 may be formed of an inorganic semiconductor or an organic semiconductor, and may be formed to about 500 GPa. When the semiconductor active layer 51 is formed of polysilicon in the inorganic semiconductor, after amorphous silicon is formed, polycrystallization can be performed by various crystallization methods. This active layer has source and drain regions heavily doped with N-type or P-type impurities, and has channel regions therebetween.

The inorganic semiconductor may include CdS, GaS, ZnS, CdSe, CaSe, ZnSe, CdTe, SiC, and silicon materials such as a-Si (amorphous silicon) or poly-Si (poly silicon).

In addition, the organic semiconductor may be provided with a semiconducting organic material having a band gap of 1 eV to 4 eV. As a polymer, polythiophene and its derivatives, polyparaphenylenevinylene and its derivatives, polyparaphenylene and its Derivatives, polyfluorene and derivatives thereof, polythiophenevinylene and derivatives thereof, polythiophene-heterocyclic aromatic copolymers and derivatives thereof, and as small molecules, oligoacenes of pentacene, tetracene, naphthalene and Derivatives thereof, alpha-6-thiophene, oligothiophenes of alpha-5-thiophene and derivatives thereof, phthalocyanine with and without metals and derivatives thereof, pyromellitic dianhydrides or pyromelli Tic diimides and derivatives thereof, perylenetetracarboxylic acid dianhydride or perylenetetracarboxylic diimides and derivatives thereof.

The gate insulating film 42 is provided on the upper surface of the semiconductor active layer 51 by SiO _{2 or the} like, and a predetermined area above the gate insulating film 42 is formed by a conductive metal film such as MoW, Al, Cr, Al / Cu, or the like. 52) is formed. The material forming the gate electrode 52 is not necessarily limited thereto, and various conductive materials such as a conductive polymer may be used as the gate electrode 52. The region where the gate electrode 52 is formed corresponds to the channel region of the semiconductor active layer 51.

An inter-insulator 43 is formed on the gate electrode 52 by SiO ₂ and / or SiN _x , and the contact holes 53a are formed in the interlayer 43 and the gate insulating layer 42. In this perforated state, source and drain electrodes 53 are formed on the interlayer insulating film 43. As the source / drain electrode 53, a conductive metal film such as MoW, Al, Cr, Al / Cu, or a conductive polymer may be used.

The structure of the thin film transistor as described above is not necessarily limited thereto, and all of the structures of the conventional general thin film transistor may be used as it is.

A passivation film 44 made of SiO ₂ , SiN _x , or the like is formed on the source / drain electrode 53, and the via hole 44a is formed in the passivation film 44.

The first electrode layer 61 of the organic light emitting diode OLED is connected to the source / drain electrode 53 through the via hole 44a on the passivation film 44. The pixel defining layer 45 is formed on the first electrode layer 61 by acrylic, BCB, polyimide, or the like, and after the predetermined opening 45a is formed in the pixel defining layer 45, The organic layer 62 and the second electrode layer 63 of the organic light emitting diode OLED are formed. Before the pixel definition layer 45 is formed, a planarization layer as shown in FIG. 1 may be further formed.

The organic light emitting diode OLED displays predetermined image information by emitting red, green, and blue light according to the flow of current, and is connected to the source / drain electrodes 53 of the TFT to supply positive power therefrom. A first electrode layer 61 to be supplied, a second electrode layer 63 provided to cover all pixels, and supplying negative power, and disposed between the first electrode layer 61 and the second electrode layer 63 to emit light Is composed of an organic layer 62.

The first electrode layer 61 and the second electrode layer 63 are insulated from each other by the organic layer 62, and light is emitted from the organic layer 62 by applying voltages having different polarities to the organic layer 62.

The organic layer 62 may be a low molecular or polymer organic layer. When the low molecular organic layer is used, a hole injection layer (HIL), a hole transport layer (HTL), and an organic emission layer (EML) may be used. , Electron Transport Layer (ETL), Electron Injection Layer (EIL), etc. may be formed by stacking in a single or complex structure, and the usable organic materials may be copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), Tris Various applications include, for example, tris-8-hydroxyquinoline aluminum (Alq3). These low molecular weight organic layers are formed by the vacuum deposition method.

In the case of the polymer organic layer, the structure may include a hole transporting layer (HTL) and a light emitting layer (EML). In this case, PEDOT is used as the hole transporting layer, and polyvinylvinylene (PPV) and polyfluorene are used as the light emitting layer. Polymer organic materials such as (Polyfluorene) are used and can be formed by screen printing or inkjet printing.

The organic layer as described above is not necessarily limited thereto, and various embodiments may be applied.

The first electrode layer 61 functions as an anode electrode, and the second electrode layer 63 functions as a cathode electrode. Of course, the first electrode layer 61 and the second electrode layer 63 The polarity may be reversed. Hereinafter, an embodiment in which the first electrode layer 61 is an anode electrode will be described.

The first electrode layer 61 may include a transparent electrode. The first electrode layer 61 may be formed of ITO, IZO, ZnO, or In ₂ O ₃ , which is a transparent electrode material. When used as a reflective electrode, Ag, Mg, Al, After forming a reflecting film with Pt, Pd, Au, Ni, Nd, Ir, Cr, a compound thereof, or the like, a transparent electrode material such as ITO, IZO, ZnO, or In ₂ O ₃ can be formed thereon.

Meanwhile, the second electrode layer 63 may also include a transparent electrode. When the transparent electrode is formed, since the second electrode layer 63 is used as a cathode, a metal having a small work function, that is, Li and Ca , LiF / Ca, LiF / Al, Al, Mg, and their compounds are deposited to face the organic layer 62, and thereafter, for forming transparent electrodes such as ITO, IZO, ZnO, or In ₂ O ₃ The material may form an auxiliary electrode layer or a bus electrode line. And, if formed in a reflective type, Li, Ca, LiF / Ca, LiF / Al, Al, Mg, and these compounds are formed by depositing the entire surface.

Meanwhile, in the present invention, the reflective member 70 is formed on the outer side of the first electrode layer 61 and on the same or higher layer than the first electrode layer, so that the organic electroluminescent element OLED is in the lateral direction. Outgoing light loss was prevented.

According to an exemplary embodiment of the present invention, as shown in FIG. 3, the reflective member 70 forms a predetermined first lead portion 43a in the interlayer insulating layer 43, and then the first lead portion ( On the edge of 43a). As shown in FIG. 2, the pattern of the reflective member 70 may be formed in a single closed curve to surround the subpixels. However, the present invention is not limited thereto and may be formed only on at least one side in a discontinuous pattern in FIG. 4.

The reflective member 70 as described above may be formed of the same material as the source and drain electrodes 53 by the same process, thereby further increasing productivity.

That is, after the interlayer insulating film 43 is formed, when the contact hole 53a is drilled, the first lead portion 43a is patterned together. Thereafter, a material forming the source and drain electrodes 53, for example, MoW, is deposited and then patterned simultaneously with the patterning of the source and drain electrodes 53, thereby reflecting the member 70 in a single closed curve or in a discontinuous pattern. ). Therefore, at this time, the reflective member 70 will be provided with MoW, the reflective member 70 will be located on the gate insulating film 42.

As the reflective member 70 is patterned, a portion of the gate insulating layer 42 corresponding to the inner region of the reflective member 70 is exposed.

Next, the passivation film 44 is formed and patterned, and the 2nd lead-in part 44b is formed. The second lead portion 44b may be formed at the same time as the via hole 44a is formed. As the second lead portion 44b is formed, a portion of the gate insulating layer 42 which also corresponds to the inner region of the reflective member 70 is exposed.

The first electrode layer 61 is formed on the exposed portion of the gate insulating film 42. One side of the first electrode layer 61 is connected to the source / drain electrode 53 through the via hole 44a.

As described above, the reflective member 70 is formed on the same layer as the first electrode layer 61, so that when light is emitted in the lateral direction from the organic layer 62 formed on the first electrode layer 61, this is reflected. By reflecting, light efficiency can be improved. Therefore, the reflective member 70 is preferably formed thicker than the sum of the thickness of the first electrode layer 61 and the organic layer 62. This is so that the emitted light in the lateral direction of the organic layer 62 can be effectively reflected. In addition, the height of the top surface of the reflective member 70 may be at least equal to the height of the top surface of the light emitting layer in the organic layer 62 or higher than the height of the top surface of the light emitting layer in the organic layer 62. This is to further improve the light extraction efficiency by reflecting all the light emitted in the diagonal direction from the light emitting layer of the organic layer 62.

And, according to the present invention, although not shown in the drawings, the reflective member 70 is formed in a tapered shape to reflect light in the direction in which the image is implemented, so that the reflective surface of the reflective member 70 It is preferable to incline, and to adjust the angle at which light is reflected in the direction in which the image is implemented.

As described above, according to the present invention, the reflective member 70 can effectively block the light emitted laterally from the organic layer 62 including the organic light emitting layer, and guide the light path in the direction in which the image is realized. Therefore, the light efficiency can be further increased.

In addition, the reflective member 70 may be formed simultaneously with the formation of the source / drain electrodes 53 without additional processing, thereby increasing productivity.

The present invention can be more effective when the first electrode layer 61 is a transparent electrode and the second electrode layer 63 is a reflective electrode, which is the first to the interlayer insulating film 43 or the passivation film 44. And second inlets 43a and 44b to minimize the insulating film disposed under the first electrode layer 61, so that even when an image is realized in the direction of the first electrode layer 61, the transmittance is due to the insulating film. The problem of being reduced can be prevented.

Although not shown in the drawings, the present invention etches the second lead portion 44b to a portion of the gate insulating film 42 so that the upper portion of the buffer layer 41 is exposed on the buffer layer 41. The first electrode layer 61 may be formed. Then, when the light emitted from the organic layer 62 is emitted in the direction of the first electrode layer 61, the number of films through which light is transmitted can be reduced, so that the light transmittance can be further improved, and the reflective member 70 Since it is positioned higher than the first electrode layer 61, it may be more advantageous to reflect the light upwardly in the diagonal direction from the organic layer 62 to be directed in the direction of the second electrode layer 63.

Meanwhile, as shown in FIG. 5, the reflective member 70 of the present invention may be formed inside the gate insulating film 42 after the third lead portion 42a is formed. In this case, since the first electrode layer 61 is formed on the buffer layer 41 of the substrate 40, the light efficiency can be further increased when emitting light in the direction of the substrate 40. In this case, the reflective member 70 may not necessarily be formed of a material forming the source / drain electrode 53, and may be formed in the same manner as the material forming the gate electrode 52.

The present invention is not necessarily limited to such a structure, and as shown in FIG. 6, it may be formed on the interlayer insulating film 43 without forming a separate inlet.

As shown in FIG. 7, the reflective member of the present invention may be formed of a data line Data and a driving line Vdd.

FIG. 8 is a cross-sectional view for explaining this in detail. The data line Data and the driving line Vdd are formed on the interlayer insulating layer 43, which is used as the reflective member 70 of the present invention. At this time, only one of the data line Data and the driving line Vdd can be used as the reflective member.

In addition, as shown in FIG. 9, after the first lead portion 43a is formed in the interlayer insulating film 43, the data line Data and the driving line Vdd are formed, and these can be used as the reflective member. . Of course, as can be seen in FIG. 5, the gate insulating layer 42 may also have an inlet portion to form a data line and a driving line.

According to the present invention made as described above, the following effects can be obtained.

First, light efficiency may be improved by reflecting light emitted in both side surfaces of the organic layer in a direction in which an image is implemented.

Second, power consumption is reduced according to the improvement of the light efficiency, thereby delaying the deterioration of the organic layer and improving the lifespan.

Third, since the reflective member can be formed in the existing process, no additional process is required, and productivity is not lowered.

Fourth, when the image is embodied in the direction of the first electrode layer, the number of insulating films can be reduced, thereby improving light transmittance.

Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary and will be understood by those of ordinary skill in the art that various modifications and variations can be made therefrom.

Claims (17)

Board; A first electrode layer provided on the substrate; A second electrode layer formed to be insulated from the first electrode layer; An organic layer interposed between the first electrode layer and the second electrode layer and having a light emitting layer; An active layer of a semiconductor material, a gate electrode formed to be insulated from a channel region of the active layer, and a source and drain electrode formed of a conductive material to contact the source and drain regions of the active layer, respectively, provided on the substrate, At least one of the source and drain electrodes may include at least one thin film transistor electrically connected to the first electrode layer; And And a reflection member provided outside the first electrode layer on the substrate, provided on the same layer as the first electrode layer, or disposed on a layer higher toward the organic layer than the first electrode layer. The height of the top surface of the reflective member is equal to the height of the top surface of the light emitting layer or higher than the height of the top surface of the light emitting layer. delete The method of claim 1, And the reflective member is thicker than the sum of the thicknesses of the first electrode layer and the organic layer. The method of claim 1, And the reflective member is made of a metal material. The method of claim 1, And the reflective member is formed in a closed curve along a circumference of the organic layer. The method of claim 1, And the reflective member is formed in one discontinuous pattern along the circumference of the organic layer. The method of claim 1, And the reflective member is insulated from the first electrode layer. The method of claim 1, And the reflective member is in contact with the first electrode layer. The method of claim 1, The reflective member is formed of the same material as the gate electrode. The method of claim 9, A first insulating layer provided between the substrate and the active layer, a second insulating layer provided between the active layer and the gate electrode, and a third insulating layer provided between the gate electrode and the source and drain electrodes; The organic light emitting display device of claim 1, wherein the reflective member is disposed on the second insulating layer. The method of claim 9, A first insulating layer provided between the substrate and the active layer, a second insulating layer provided between the active layer and the gate electrode, and a third insulating layer provided between the gate electrode and the source and drain electrodes; The organic light emitting display device of claim 1, wherein the reflective member is disposed on the first insulating layer. The method of claim 1, The reflective member is formed of the same material as the source and drain electrodes. The method of claim 12, A first insulating layer provided between the substrate and the active layer, a second insulating layer provided between the active layer and the gate electrode, and a third insulating layer provided between the gate electrode and the source and drain electrodes; The organic light emitting display device of claim 1, wherein the reflective member is disposed on the third insulating layer. The method of claim 12, A first insulating layer provided between the substrate and the active layer, a second insulating layer provided between the active layer and the gate electrode, and a third insulating layer provided between the gate electrode and the source and drain electrodes; The organic light emitting display device of claim 1, wherein the reflective member is disposed on the second insulating layer. The method of claim 12, A first insulating layer provided between the substrate and the active layer, a second insulating layer provided between the active layer and the gate electrode, and a third insulating layer provided between the gate electrode and the source and drain electrodes; The organic light emitting display device of claim 1, wherein the reflective member is disposed on the first insulating layer. delete The method according to any one of claims 1 and 3 to 15, And the first electrode layer comprises a transparent electrode.

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