KR20030084336A - Active matrix type Organic Electro luminescence Device and the Manufacture method of the same - Google Patents

Abstract

PURPOSE: An active matrix type organic electro-luminescent device and a fabricating method thereof are provided to reduce a loss of light by forming a reflective layer between on a signal line and the first electrode or between a power line and the first electrode. CONSTITUTION: An active matrix type organic electro-luminescent device includes a substrate(300), an oxide layer(305), an active layer, a gate insulating layer(310), a gate electrode, a power line(325), a source electrode, a drain electrode, a signal line(335), the first electrode(360), an organic layer(365), and the second electrode(370). A reflective layer(375) is installed between the signal line(335) and the first electrode(360) or between the power line(325) and the first electrode(360). The reflective layer(375) is formed between an upper surface of the gate insulating layer(310) and a bottom surface of an insulating layer deposited on the power line(325).

Description

Active matrix type organic electroluminescent device and the manufacturing method of the same

The present invention relates to an organic electroluminescent device, and more particularly, to an active matrix organic electroluminescent device and a method of manufacturing the same.

The organic electroluminescent device injects electrons and holes into the light emitting layer from the electron injection electrode (cathode) and the hole injection electrode (anode) respectively. It is an element which emits light.

The organic electroluminescent device does not require a separate light source, unlike a conventional thin liquid crystal display device, so that the volume and weight of the device can be reduced, the process can be simplified, and a plasma display (PDP) or an inorganic electric field can be used. Compared to the light emitting device display, it can be driven at a low voltage (5 to 10V).

In general, organic electroluminescent devices are largely divided into passive matrix organic electroluminescent devices and active matrix organic electroluminescent devices according to their structure and driving method.

Passive matrix type organic electroluminescent devices have advantages in that they are easier to manufacture and simpler to drive than active matrix type organic electroluminescent devices. However, they are difficult to drive as power consumption increases and the number of scan lines increases. On the contrary, unlike the configuration of the passive matrix organic electroluminescent device, the active matrix organic electroluminescent device includes a thin film transistor (TFT) in each of the plurality of pixel areas. Since each pixel unit can be driven independently, there is an advantage in that it is efficient to make a sophisticated device.

In addition, the active matrix organic electroluminescent device is classified into a bottom emission method in which light is emitted to the substrate side and a top emission method in which light is emitted to the opposite side of the substrate according to the light emission method.

The top emission method is a technology applied to a product requiring high resolution because the design of the thin film transistor is free.

1 is a cross-sectional view schematically showing a conventional top emission type active matrix organic electroluminescent device.

Referring to Figure 1, the configuration and operation of a conventional top emission type active matrix organic electroluminescent device will be described.

The conventional top emission type active matrix organic electroluminescent device includes a pixel portion P and a thin film transistor T which is a driving element of each pixel region defined on a substrate. In the form of

The thin film transistor T includes a gate electrode 4, a source electrode 9, and a drain electrode 8, and an active layer 2 is formed between the source electrode 9 and the drain electrode 8.

Here, the gate electrode 4 of the thin film transistor T is formed separately for each pixel portion P, and forms a contact on the gate electrodes 4 to connect the contacts between the pixel regions laterally. The gate insulating film 3 and the active layer 2 exist below the gate electrode 4.

The active layer 2 may be broadly divided into amorphous silicon type and polysilicon type according to the characteristics of the semiconductor thin film used. In the case of amorphous silicon, the active layer 2 may be formed using chemical vapor deposition (CVD) at a low temperature. It is not suitable for forming a transistor element of a driving circuit requiring low operating mobility due to low carrier mobility.

On the other hand, polysilicon has a much higher carrier mobility than amorphous silicon, and thus can be used to fabricate a driving circuit type IC, but has a disadvantage in that a series of processes are required.

In the conventional thin film transistor, a silicon layer is formed on the glass substrate 1 through a process of forming a silicon pattern constituting the active layer 2 on the glass substrate 1, and the active layer 2 is formed through normal exposure and etching. The gate insulating film 3 and the gate electrode 4 are then formed.

In addition, the pixel portion P is formed on the first electrode 11 and the first electrode 11 in contact with the drain electrode 8 to form holes or holes from the first electrode 11. The second electrode which is formed on the organic film layer 12 of the multilayer or single layer receiving electrons, the upper portion of the organic film layer 12 to inject electrons or holes into the organic film layer 12 It consists of (13). In this case, depending on whether the driving thin film transistor T is n type or p type, the first electrode 11 contacting the drain electrode 8 of the thin film transistor T may be a cathode electrode or an anode. It may be an (anode) electrode.

That is, assuming that the thin film transistor T is n-type, the active channel of the thin film transistor T (the active layer 2 exposed between the source electrode 9 and the drain electrode 8) flows. Since the primary carrier becomes electrons, the cathode electrode in contact with the drain electrode 8 of the thin film transistor T forms the first electrode 11 in the pixel portion P.

When an electric field is formed between the first electrode 11 and the second electrode 13, electrons or holes injected into the organic layer 12 through the first electrode 11, and the second electrode 13. Holes or electrons injected into the organic layer 12 through each other are met.

In this case, electrons and holes are combined in the emission layer inside the organic layer 12 to generate excitons having high energy, and the excitons fall to low energy to emit unique light.

Here, the insulating layers 5 and 7 are deposited to protect the gate electrode 4 and the power line (not shown), respectively, and the bank layer 10 includes the first electrode 11 and the second electrode 13. It is deposited to prevent the short circuit.

FIG. 2 (a) is a schematic plan view of each pixel region in a conventional top emission type active matrix organic electroluminescent device, and FIG. 2 (b) is a cross-sectional view (a-a ') of the pixel portion of the pixel region. )to be.

Referring to FIGS. 2A and 2B, each pixel area of an active organic electroluminescent device includes a signal line 235, a scan line 240, and a power line 225 therein. And a first electrode (pixel portion) 260 and a thin film transistor forming region 245. When the active organic electroluminescent device forms a top emission structure, light is opposite to the substrate 200. Since the first electrode 260 uses a material having high light reflectivity, the second electrode 270 uses a transparent or translucent material in the organic film layer 265 to the opposite side of the substrate 200. It will lead to the generated light.

At this time, the luminous efficiency of the light generated inside the organic layer 254 becomes substantially constant regardless of the external structure, so that the reflectivity of the first electrode 260 is increased or not the laminated structure of the organic layer 265 is increased. The transmittance of the electrode 270 is increased to improve external light extraction efficiency. In general, a top emission structure is generated by the light emitted from the light emitting layer inside the organic layer 265 between two electrodes, and the light reflected from the first electrode 260 and the non-reflected light are added to the substrate ( 200) light will be emitted to the opposite side.

However, at this time, in the conventional structure, light is emitted from the light emitting layer inside the organic layer 265 between the signal line 235 and the region where the first electrode 260 is formed and between the power line 225 and the region where the first electrode 260 is formed. The reflected light is not reflected, causing light loss.

This lowers the luminous efficiency of the device, thereby increasing the power consumption of the panel (panel) to produce the same brightness.

According to the present invention, a reflective layer having high reflectivity is disposed between the signal line and the first electrode and between the power supply line and the first electrode to prevent light loss caused by the reflection of light emitted from the light emitting layer inside the conventional organic film layer and provide more light. SUMMARY OF THE INVENTION An object of the present invention is to provide an active matrix organic electroluminescent device and a method of manufacturing the same.

1 is a cross-sectional view schematically showing a conventional top emission type active matrix organic electroluminescent device.

Fig. 2 is a plan schematic diagram (a) and a cross-sectional view (b) of a pixel region in a conventional top emission type active matrix organic electroluminescent device, respectively.

Fig. 3 is a schematic plan view (a) and a cross sectional view (b) of a pixel region in an active matrix organic electroluminescent device of a top emission method according to an embodiment of the present invention, respectively.

4 is a cross-sectional view showing a manufacturing process of an active matrix type organic electroluminescent device of a top emission method according to an embodiment of the present invention.

Fig. 5 is a schematic plan view (a) and a cross sectional view (b) of a pixel region respectively in a top emission type active matrix organic electroluminescent device according to another embodiment of the present invention. Sectional drawing which shows the manufacturing process of the active matrix type organic electroluminescent element of a top emission system by an example.

<Explanation of symbols for the main parts of the drawings>

200, 300, 500: substrate 205, 305, 505: oxide film

210, 310, 510: gate insulating film 215, 315, 515: first insulating layer

220, 320, 520: second insulating layer 225, 325, 525: power line

230, 330, 530: passivation layer 235, 335, 535: data line

240, 340, 540; scanning line

245, 345, 545: thin film transistor formation region

250: anti-reflective area 255, 355, 555: bank layer

260, 360, 560: first electrode 265, 365, 565: organic film layer

270, 370, 570: second electrode 375, 575: reflective layer 580: third insulating layer

400, 600: active layer 405, 605: gate film

410 and 610 gate electrode 415 and 615 source region

420, 620: drain region 425, 625: source electrode

430, 630: drain electrode

In order to achieve the above object, the active matrix organic electroluminescent device according to the present invention,

A top emission type active layer in which an oxide film, an active layer, a gate insulating film, a gate electrode, a power line, a source electrode and a drain electrode, a signal line, a first electrode, an organic layer, and a second electrode are sequentially formed on a substrate by a general semiconductor process. In the matrix type organic electroluminescent device, a reflective layer is present between the signal line and the first electrode, and between the power line and the first electrode, wherein the reflective layer is between the upper surface of the gate insulating film and the lower surface of the insulating layer deposited on the power line. Characterized in that formed.

In addition, the reflective layer is characterized in that formed of the same material as the gate electrode.

Another active matrix organic electroluminescent device of the present invention for achieving the above object,

A top emission type active layer in which an oxide film, an active layer, a gate insulating film, a gate electrode, a power line, a source electrode and a drain electrode, a signal line, a first electrode, an organic layer, and a second electrode are sequentially formed on a substrate by a general semiconductor process. In the matrix type organic electroluminescent device, a reflective layer is present between the signal line and the first electrode, and between the power supply line and the first electrode, and the reflective layer is formed on the top surface and the first electrode of the passivation layer deposited on the source electrode, the drain electrode, and the signal line. Or between the lower surface of the bank layer formed between the first electrode and the second electrode.

In addition, the active matrix organic electroluminescent device manufacturing method according to an embodiment according to the present invention in order to achieve the above object,

Sequentially forming an oxide film, an active layer, and a gate insulating film on a substrate by a general semiconductor process; Forming a gate electrode and a reflective layer by depositing a gate layer on the gate insulating layer, applying a photoresist on the gate layer, exposing the photoresist using a photomask, and leaving a predetermined pattern through development; And sequentially forming an insulating layer, a power line, an insulating layer, a source electrode and a drain electrode, a signal line, a protective film, a first electrode, an organic layer, and a second electrode on a surface on which the gate electrode and the reflective layer are formed. do.

The gate layer may be formed by stacking a metal layer to a predetermined thickness, and the reflective layer may be formed between the signal line and the first electrode and between the power line and the first electrode.

In addition, the active matrix organic electroluminescent device manufacturing method according to another embodiment according to the present invention in order to achieve the above object,

Sequentially forming an oxide film, an active layer, a gate insulating film, a gate electrode, an insulating layer, a power line, an insulating layer, a source electrode and a drain electrode, a signal line, and a protective film on a substrate by a general semiconductor process;

Depositing a metal layer on the passivation layer, applying a photoresist on the metal layer, exposing the photoresist using a photomask, and then leaving a predetermined pattern through development to form a reflective layer;

And sequentially forming an insulating layer, a first electrode, an organic layer, and a second electrode on a surface on which the reflective layer is formed.

In addition, the reflective layer is characterized in that formed between the signal line and the first electrode and between the power line and the first electrode.

According to the present invention, in the top emission method, the reflection layer is disposed in a region through which the light emitted from the organic emission layer internal light emitting layer is not reflected, thereby reducing the loss of light and eventually allowing more light to come out to the opposite side of the substrate. Therefore, there is an advantage that the power consumption can be reduced by obtaining a relative efficiency increase effect compared to the prior art through the same current.

In addition, in the method of manufacturing an active matrix organic electroluminescent device according to the present invention, the step of forming the reflective layer can be easily added without difficulty in the process.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 3 (a) is a schematic plan view of each pixel region in a top emission type active matrix organic electroluminescent device according to an embodiment of the present invention, and FIG. 3 (b) is a cross-sectional view of the pixel portion of the pixel region. (b-b ').

Referring to Figure 3 (a), (b) will be described the configuration and operation of the top emission type active matrix organic electroluminescent device according to an embodiment of the present invention.

Referring to FIGS. 3A and 3B, the pixel region of each of the active organic electroluminescent elements includes a signal line 335, a scan line 340, and a power line 325 therein. The first electrode (pixel portion) 360 and the thin film transistor forming region 345 are included, and unlike the prior art, between the signal line 335 and the first electrode 360 and between the power line 325 and the first electrode 360. The reflective layer 375 is included between the one electrode 360.

Although not shown in FIG. 3A, the organic electrode layer 365 and the second electrode 370 illustrated in FIG. 3B are stacked on the first electrode (pixel portion) 360. Have.

As described in the prior art, when the active organic electroluminescent device forms a top emission structure, light must be emitted to the opposite side of the substrate 300, and thus, the first electrode 360 uses a material having high light reflectivity. The second electrode 370 uses a transparent or translucent material to guide light generated in the organic film layer 365 to the opposite side of the substrate 300, and the size of the organic film layer 365 is equal to the first. The electrode 360 and the second electrode 370 are formed larger than the first electrode 360 in order to prevent the short circuit due to contact with each other.

Accordingly, the light emitted from the light emitting layer inside the organic layer 365 is not reflected by the first electrode 360 to be emitted from the opposite side of the substrate 300, and between the signal line 335 and the first electrode 360 and the power line. It is transmitted between the 325 and the first electrode 360.

In the conventional structure, light emitted from the internal emission layer of the organic layer 365 is not reflected between the signal line 335 and the first electrode 360 and between the power line 325 and the first electrode 360. 3B, the reflective layer 375 is formed between the signal line 335 and the first electrode 360 and between the power line 325 and the first electrode 360. The light that is not reflected by the first electrode 360 is reflected. In this case, the reflective layer 375 is formed at the same time as the gate electrode (not shown) is formed during the thin film transistor fabrication process. 375 is formed of the same material as the material of the gate electrode (not shown).

3 (b) illustrates a cross-sectional view (b−b ′) of the pixel portion of the pixel region, and the thin film transistor forming region 345 is not shown.

4 is a cross-sectional view showing a manufacturing process of an active matrix type organic electroluminescent device of a top emission method according to an embodiment of the present invention.

However, in FIG. 4, since the thin film transistor manufacturing process will be described, the pixel portion of the pixel region is not shown in detail in the drawing.

Therefore, referring to FIGS. 3B and 4, the manufacturing process of the active matrix organic electroluminescent device of the top emission method according to the embodiment of the present invention can be described in more detail.

Referring to Figure 3 (b) and 4 will be described the manufacturing process of the active matrix organic electroluminescent device of the top emission method according to an embodiment of the present invention.

First, an oxide film 305 is deposited on the glass substrate 300 as a buffer layer. (A)

Next, a silicon layer (not shown) is deposited on the oxide layer 305, and a silicon pattern is formed through nicking with a photoresist to form an active layer 400 of the thin film transistor. One exposure mask is used to form the silicon pattern, wherein the silicon layer may be p-type or n-type.

The silicon layer (not shown) may be composed of amorphous silicon or polysilicon, and in the case of polysilicon, amorphous silicon is first formed in a 500 Å to 800 Å thickness by CVD at low temperature and immediately annealed with a laser to crystallize; Amorphous silicon is formed by CVD at low temperature, and an insulating film such as a silicon oxide film is formed on the gate insulating film to a thickness of about 1000 GPa, followed by laser annealing to polysilicon.

Next, the photoresist pattern used as the nicking mask is removed, and then the gate insulating film 310 and the gate film 405 are sequentially stacked thereon. The gate insulating layer 310 is formed of a silicon oxide film or a silicon nitride film, and the gate film 405 is formed by stacking a metal layer to a predetermined thickness. In this case, aluminum or aluminum alloy (Al) is used. alloy), chromium (Cr), and the like, and the metal layer serving as the reflective layer 375 in the present invention coincides with the gate film 405. Thus, the material of the reflective layer 375 is the gate film 405. The metal used as) is aluminum (Al), aluminum alloy (Al alloy), chromium (Cr), etc. (C)

Next, a photoresist is applied on the gate layer 405 and exposed using a photomask, and then a constant photoresist pattern is left through development. In this case, the gate electrode 410 and the reflective layer 375 are formed by the photoresist pattern. The p-type or n-type high dose ion implantation is usually performed in a state where the photoresist pattern is removed to form the source region 415 and the drain region 420 of the p-type or n-type thin film transistor. Ion implantation usually proceeds with high energy, typically 80 to 90 keV.

However, since FIG. 4 illustrates the thin film transistor manufacturing process as described above, the reflective layer 375 is not shown. (D)

Next, an insulating layer 315 (referred to as a first insulating layer) is deposited on a surface on which the gate electrode 410 and the reflective layer 375 are formed. At this time, the insulating layer 315 uses a silicon oxide film or a silicon nitride film.

Next, a metal layer forming a power line 325 is deposited on the first insulating layer 315, and a power line 325 is formed at a predetermined position through a general semiconductor process. When the power line 325 is formed, the insulating layer 320 (which is referred to as a second insulating layer) as described above is again deposited thereon.

However, since FIG. 4 illustrates the thin film transistor manufacturing process as described above, the power line 320 is not shown. (F)

Next, a via hole (not shown) is formed in a portion corresponding to the source region 415 and the drain region 420 formed above, and a metal layer (not shown) is deposited. After depositing the metal layer (not shown), the source electrode 425 and the drain electrode 430 are formed only in a region where the via hole (not shown) is formed through a general semiconductor process, and the signal line 335 in another predetermined space. Is formed, and when the source electrode 425, the drain electrode 430, and the signal line 335 are formed, the passivation layer 330 is deposited thereon. However, FIG. 4 illustrates a process of manufacturing a thin film transistor as described above. The signal line 335 is not shown because it is shown in the center. (G)

Finally, after forming a contact hole (not shown) on the drain electrode 430, the first electrode 360 is deposited in contact with the drain electrode 430 through a general semiconductor process by depositing a metal layer (not shown) ) Is formed, and the organic layer 365 and the second electrode 370 are deposited on the first electrode 360 through a general semiconductor process. In this case, however, in order to prevent the first electrode 360 and the second electrode 370 from being short-circuited, the bank layer 355 is stacked before the organic layer 365 is laminated.

Through this process, the active matrix organic electroluminescent device of the top emission method according to the embodiment of the present invention is manufactured.

That is, the reflective layer 375 formed according to the organic electroluminescent device manufacturing method according to the embodiment of the present invention is shown on the upper surface of the gate insulating film 310 and the power line 325 as shown in FIG. It is formed between the lower surface of the second insulating layer 320 is deposited, the position is disposed between the signal line 335 and the first electrode 360 and the power line 325 and the first electrode 360. As mentioned above, generally used as the material of the gate electrode 410 is aluminum (Al), aluminum alloy (Al alloy), chromium (Cr), etc., which is in the light emitting layer inside the organic layer 365 It is enough to reflect the emitted light.

In addition, the plurality of pixel regions illustrated in FIG. 3 (a) are included in the active matrix organic electroluminescent device at regular intervals, and thus, the reflective layer 375 made of aluminum or an aluminum alloy, etc., is also formed at regular intervals. Will be arranged.

3 and 4, the reflective layer 375 is disposed in a region through which the light emitted from the internal emission layer of the organic layer 365 is not reflected, thereby reducing the loss of light and eventually reducing the amount of light. In addition to the advantage that more light can be emitted to the opposite side of the substrate 300 to increase the luminous efficiency, the reflective layer 375 is formed at the same time as the gate electrode 410 is formed during the manufacturing process of the thin film transistor. There is no need for a separate process to form the reflective layer 375 has the advantage that can be easily added without difficulty in the process.

FIG. 5 (a) is a schematic plan view of each pixel area in the top emission type active matrix organic electroluminescent device according to another embodiment of the present invention, and FIG. 5 (b) is a pixel part of the pixel area in FIG. (C-c ').

Referring to FIGS. 5A and 5B, the configuration and operation of an active matrix type organic electroluminescent device of a top emission method according to an embodiment of the present invention will be described.

The active matrix organic electroluminescent device according to another embodiment of the present invention has a signal line 535 and a first electrode as compared with the active matrix organic electroluminescent device shown in FIGS. 3 (a) and 3 (b). The structure is identical except that the layer layers on which the reflective layer 575 existing between the 560 and the power supply line 525 and the first electrode 560 are deposited are different from each other.

It can be clearly seen from FIG. 5 (b) that the layer on which the reflective layer is deposited is different from the embodiment of the present invention shown in FIGS. 3 and 4.

That is, the reflective layer 575 of the active matrix organic electroluminescent device of FIG. 5B is deposited on the source, drain electrode (not shown), and signal line 535. The upper surface of the passivation layer 530 and the first electrode 560 or the bank layer 555 formed between the first electrode 560 and the second electrode 570 is formed.

5B illustrates a cross-sectional view c-c 'of the pixel portion of the pixel region, and the thin film transistor formation region 545 is not shown.

6 is a cross-sectional view showing a manufacturing process of an active matrix type organic electroluminescent device of a top emission method according to another embodiment of the present invention.

However, in FIG. 6, since the thin film transistor manufacturing process will be described, the pixel portion of the pixel region is not shown in detail in the drawing.

Therefore, referring to FIGS. 5B and 6, the manufacturing process of the active matrix organic electroluminescent device of the top emission method according to another embodiment of the present invention can be described in more detail.

Referring to FIGS. 5 (b) and 6, a manufacturing process of an active matrix type organic electroluminescent device of a top emission method according to an embodiment of the present invention will be described. First, an oxide film (A) as a buffer layer is formed on the glass substrate 500. 505). (A)

Next, a silicon layer (not shown) is deposited on the oxide layer 505, and a silicon pattern is formed through nicking with a photoresist to form an active layer 600 of the thin film transistor. One exposure mask is used to form the silicon pattern, wherein the silicon layer may be p-type or n-type. (B)

Next, the photoresist pattern used as the nicking mask is removed, and then the gate insulating film 510 and the gate film 605 are sequentially stacked thereon. The gate insulating film 510 is formed of a silicon oxide film or a silicon nitride film, and the gate film 605 is formed by stacking a metal layer to a predetermined thickness. In this case, aluminum or aluminum alloy (Al) is used. alloy), chromium (Cr), and the like. (C)

Next, a photoresist is applied on the gate layer 605 and exposed using a photomask, and then a constant photoresist pattern is left through development. In this case, the gate electrode 610 is formed by the photoresist pattern. The p-type or n-type high dose ion implantation is usually performed in a state where the photoresist pattern is removed to form the source region 615 and the drain region 620 of the p-type or n-type thin film transistor. Ion implantation usually proceeds with high energy, typically 80 to 90 keV. (D)

Next, an insulating layer 515 (called a first insulating layer) is deposited on the surface on which the gate electrode 610 is formed. At this time, the insulating layer 515 uses a silicon oxide film or a silicon nitride film.

Next, a metal layer forming a power line 525 is deposited on the first insulating layer 515, and a power line 525 is formed at a predetermined position through a general semiconductor process. When the power line 525 is formed, the insulating layer 520 (which is referred to as a second insulating layer) as described above is again deposited thereon.

However, since FIG. 6 illustrates the thin film transistor manufacturing process as described above, the power line 520 is not shown. (F)

Next, via holes (not shown) are formed for the corresponding portions of the source region 615 and the drain region 620 formed above, and a metal layer (not shown) is deposited. After depositing the metal layer (not shown), the source electrode 625 and the drain electrode 630 are formed only in a region where the via hole (not shown) is formed through a general semiconductor process, and the signal line 535 in another predetermined space. ) And a passivation layer 530 is deposited thereon when the source electrode 625, the drain electrode 630, and the signal line 535 are formed.

However, as shown in FIG. 6, the signal line 535 is not illustrated since the drawing is centered on the thin film transistor manufacturing process. (G)

Next, after depositing a metal layer (not shown) on the protective film 530, a reflective layer 575 is formed through a general semiconductor process, and an insulating layer 580 (called a third insulating layer) is deposited thereon. do.

However, since FIG. 6 illustrates a thin film transistor manufacturing process as described above, the reflective layer 535 is not shown. (H)

Finally, after forming a contact hole (not shown) above the drain electrode 630, a metal layer (not shown) is deposited and the first electrode 560 in contact with the drain electrode 630 through a general semiconductor process. ) And an organic layer 565 and a second electrode 570 are deposited on the first electrode 560 through a general semiconductor process.

In this case, however, in order to prevent the first electrode 560 and the second electrode 570 from being short-circuited, the bank layer 555 is stacked before the organic layer 565 is laminated.

Through this process, the active matrix organic electroluminescent device of the top emission method according to another embodiment of the present invention is manufactured.

That is, the reflective layer 375 formed according to the organic electroluminescent device manufacturing method according to another embodiment of the present invention is the source electrode 625 and the drain electrode 630 as shown in Figure 5 (b) and 6 And a top surface of the passivation layer 530 deposited on the signal line 535 and a bottom surface of the first electrode 560 or the bank layer 555 formed between the first electrode 560 and the second electrode 570. The position is disposed between the signal line 535, the first electrode 560, the power line 525, and the first electrode 560.

Accordingly, in the embodiment of the present invention shown in FIGS. 5B and 6, the reflective layer 575 is not formed at the same time as the gate electrode 610 of the thin film transistor is formed, but the source electrode 625. ) And the drain electrode 630 and the signal line 535 are formed and deposited after the protective film 470 is deposited thereon. In this case, the reflective layer shown in the embodiment of the present invention shown in FIGS. 575 is closer to the organic film layers 365 and 565 that emit light than the reflective layer 375 shown in the embodiments of the present invention illustrated in FIGS. 3 and 4, and thus is not reflected by the first electrodes 360 and 560. There is an advantage that can reflect the light can not more efficiently.

Here, the manufacturing method of the embodiment of the present invention shown in Figures 4 and 6 is characterized in that the step of forming the reflective layer, in addition to the manufacturing process described in Figures 4 and 6 in the general manufacturing process of the organic electroluminescent device Applicability is apparent to those skilled in the art to which the present invention pertains.

As described above, according to the active matrix organic electroluminescent device according to the present invention, the reflective layer is disposed in a region through which the light emitted from the organic light emitting layer is not reflected, thereby reducing the loss of light and eventually providing more light. Being able to come out on the opposite side of the substrate, there is an advantage that the power consumption can be reduced by obtaining a relative efficiency increase effect compared to the prior art through the same current.

In addition, in the method of manufacturing an active matrix organic electroluminescent device according to the present invention, the step of forming the reflective layer can be easily added without difficulty in the process.

Claims (8)

A top emission type active layer in which an oxide film, an active layer, a gate insulating film, a gate electrode, a power supply line, a source electrode and a drain electrode, a signal line, a first electrode, an organic layer, and a second electrode are sequentially formed on a substrate by a general semiconductor process. In the matrix type organic electroluminescent device, A reflective layer is present between the signal line and the first electrode, and between the power line and the first electrode, wherein the reflective layer is formed between an upper surface of the gate insulating layer and a lower surface of the insulating layer deposited on the power line. Organic electroluminescent devices. The method of claim 1, And the reflective layer is formed of the same material as the gate electrode. A top emission type active layer in which an oxide film, an active layer, a gate insulating film, a gate electrode, a power supply line, a source electrode and a drain electrode, a signal line, a first electrode, an organic layer, and a second electrode are sequentially formed on a substrate by a general semiconductor process. In the matrix type organic electroluminescent device, A reflective layer is present between the signal line and the first electrode, and between the power line and the first electrode, and the reflective layer is formed on the top surface and the first electrode or the first electrode and the second electrode on the source electrode, the drain electrode, and the signal line. An active matrix organic electroluminescent device, characterized in that formed between the lower surface of the bank layer formed between. Sequentially forming an oxide film, an active layer, and a gate insulating film on a substrate by a general semiconductor process; Forming a gate electrode and a reflective layer by depositing a gate layer on the gate insulating layer, applying a photoresist on the gate layer, exposing the photoresist using a photomask, and leaving a predetermined pattern through development; And sequentially forming an insulating layer, a power line, an insulating layer, a source electrode and a drain electrode, a signal line, a protective film, a first electrode, an organic layer, and a second electrode on a surface on which the gate electrode and the reflective layer are formed. Active matrix organic electroluminescent device manufacturing method The method of claim 4, wherein The gate layer is a method of manufacturing an active matrix organic electroluminescent device, characterized in that the metal layer is laminated to a predetermined thickness. The method of claim 4, wherein And the reflective layer is formed between the signal line and the first electrode, and between the power line and the first electrode. Sequentially forming an oxide film, an active layer, a gate insulating film, a gate electrode, an insulating layer, a power line, an insulating layer, a source electrode and a drain electrode, a signal line, and a protective film on a substrate by a general semiconductor process; Depositing a metal layer on the passivation layer, applying a photoresist on the metal layer, exposing the photoresist using a photomask, and then leaving a predetermined pattern through development to form a reflective layer; And sequentially forming an insulating layer, a first electrode, an organic film layer, and a second electrode on a surface on which the reflective layer is formed. The method of claim 7, wherein And the reflective layer is formed between the signal line and the first electrode, and between the power supply line and the first electrode.