KR20060012197A - Organic electro-luminescence display - Google Patents

Abstract

An organic light emitting display device according to the present invention includes an insulating substrate, a polarizing film formed on the insulating substrate, a polycrystalline silicon layer formed on the polarizing film, a gate insulating film formed on the polycrystalline silicon layer, a gate wiring formed on the gate insulating film, An interlayer insulating film formed over the gate wiring, a data wiring formed over the interlayer insulating film, a pixel electrode formed of the same layer as the data wiring, an organic EL layer formed in a predetermined region on the pixel electrode, and an organic EL layer. And a common electrode, wherein the polarizing film is formed to a thickness of 0.01 to 100 µm. Therefore, the organic light emitting diode display according to the present invention has the advantage of having a flexible and thin thickness by forming a coating polarizing film on or below the flexible insulating substrate.

OLED display, polarizer, coating, flexible

Description

Organic light emitting display device {ORGANIC ELECTRO-LUMINESCENCE DISPLAY}

1 is a layout view of an organic light emitting panel of an organic light emitting diode display according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II 'of FIG. 1;

3 is a cross-sectional view taken along line III-III 'of FIG. 1,

4A, 5A, 6A, and 7A are layout views of organic light emitting panels in each step of manufacturing an organic light emitting display device according to an embodiment of the present invention;

4B to 7B are cross-sectional views of IVb-IVb 'lines of FIG. 4A, Vb-Vb' lines of FIG. 5A, VIb-VIb 'lines of FIG. 6A, and VIIb-VIIb' lines of FIG. 7A, respectively;

4C to 7C are cross-sectional views of IVc-IVc 'line, Vc-Vc' line, VIc-VIc 'line and VIIc-VIIc' line,

8 and 9 are cross-sectional views of an organic light emitting diode display according to another exemplary embodiment. FIG. 8 is a cross-sectional view taken along line II-II ′ of FIG. 1, and FIG. 9 is III-III of FIG. 1. Is a cross-sectional view taken along a line.

<Description of the symbols for the main parts of the drawings>

110: substrate gate electrode: 124a, 124b

Source electrode: 173a, 173b Drain electrode: 175a                 

First data line: 171a, Second data line: 171b

Source area: 153a, 153b Drain area: 155a, 155b

Channel part: 154a, 154b pixel electrode: 190

Common electrode: 270 organic light emitting layer: 70

50, 60: polarizing film 90: protective film

The present invention relates to an organic light emitting display device.

In general, an organic electroluminescent display device is a display device that displays an image by electrically exciting an fluorescent organic material, and is formed between a hole injection electrode (anode) and an electron injection electrode (cathode), and a gap between them. The organic light emitting display device includes an organic light emitting layer, and when a charge is injected into the organic light emitting layer, electrons and holes are paired with each other and then disappear.

Such an organic light emitting display device is also called an organic light emitting diode (OLED) because each pixel has a diode characteristic, and has a structure of an anode (ITO), an organic thin film, and a cathode electrode layer (Metal) as shown in FIG. 1. The organic thin film has a multilayer structure including an emitting layer (EML), an electron transport layer (ETL), and a hole transport layer (HTL) to improve the emission efficiency by improving the balance between electrons and holes. It also includes a separate electron injecting layer (EIL) and a hole injecting layer (HIL). The pixels which are organic light emitting cells of the organic light emitting display are arranged in a matrix of n × m to form an organic EL display panel, and are classified into a simple matrix method and an active matrix method using a thin film transistor as a method of driving an organic light emitting cell. .

The passive matrix method selects and drives a line corresponding to a specific pixel by arranging the anode line and the cathode line to cross each other, while the active matrix method drives the anode electrode disposed in each organic light emitting cell. It is a driving method which connects a thin film transistor and a capacitor and maintains a voltage by capacitor capacity. In this case, the amount of current of the driving thin film transistor which supplies the current for light emission to the organic light emitting cell is controlled by the data voltage applied through the switching transistor, and the gate signal line (or gate) of the switching transistor is disposed to cross each other (or Scan line) and data signal line. Therefore, when the switching transistor is turned on by a signal transmitted through the gate signal line, a data voltage is applied to the gate voltage of the driving thin film transistor through the data line, and current flows through the driving thin film transistor to the organic light emitting cell. Light emission is achieved. In this case, the cathode electrode is disposed over the entire display area in which an image is displayed, and is commonly connected to each pixel to transmit a common voltage.

The organic light emitting diode display is classified into a top emission method and a bottom emission method according to a direction in which an image is displayed. The top emission method forms a cathode using a transparent electrode material such as ITO or IZO. The anode electrode is formed of an opaque conductive material, and in the back emission method, the electrode is arranged in reverse. In addition, if necessary, the anode may be disposed upward while adopting a top emission method.

Unlike a general liquid crystal display device, an organic light emitting display device using EL (Electro-Luminescence) does not require a polarizing plate. However, since the gate line, the data line, and all the wiring lines for driving the organic light emitting diode display are made of metal, the light coming into the display device from the outside and the reflected light generated when the EL is emitted are mixed with the original output color to obtain a contrast ratio ( will reduce the contrast ratio. The polarizing plate is attached to one side of the organic light emitting diode display device in order to prevent the contrast ratio from being reduced.

Conventional polarizing plates are in the form of a film in which various components having a thickness of about 150 to 230 μm are laminated, and one side thereof includes an adhesive, and is used by being adhered to a glass substrate or a plastic substrate. Although the polarization degree of the polarizing plate is 99.8% or more, the performance is very good, but since the transmittance is 43%, it absorbs or blocks about 57% of light and has a property of fundamentally deteriorating light transmission characteristics. In addition, the conventional polarizing plate basically includes a PVA layer and a TAC layer, so that not only the thickness of the polarizing plate is thick but also the flexibility is low.

Therefore, when the polarizing plate is attached to the flexible organic light emitting diode display, the flexibility of the organic light emitting diode display is reduced.

An object of the present invention is to provide an organic light emitting display device having improved flexibility and a reduced thickness by forming a coated polarizing film inside or outside an organic light emitting display device.

The organic light emitting diode display according to the present invention is formed on an insulating substrate, a polarizing film formed on the insulating substrate, a polycrystalline silicon layer formed on the polarizing film, a gate insulating film formed on the polycrystalline silicon layer, and the gate insulating film. A gate wiring, an interlayer insulating film formed on the gate wiring, a data wiring formed on the interlayer insulating film, a pixel electrode formed of the same layer as the data wiring, and an organic EL formed in a predetermined region on the pixel electrode. It is preferable that a layer and the common electrode formed on the said organic EL layer are included, and the said polarizing film is formed in the thickness of 0.01-100 micrometers.

In addition, the insulating substrate is preferably made of a flexible plastic substrate, glass substrate or a steel thin film.

In addition, the organic light emitting diode display according to the present invention includes an insulating substrate, a polycrystalline silicon layer formed on the insulating substrate, a gate insulating film formed on the polycrystalline silicon layer, a gate wiring formed on the gate insulating film, and a gate wiring formed on the gate insulating film. An interlayer insulating film formed on the interlayer insulating film, a data wiring formed on the interlayer insulating film, a pixel electrode formed of the same layer as the data wiring, an organic EL layer formed on a predetermined region above the pixel electrode, and formed on the organic EL layer It is preferable to include the common electrode and the polarizing film formed under the said insulated substrate, and the said polarizing film is formed in the thickness of 0.01-100 micrometers.

In addition, the polarizing film preferably includes a support plate having flexibility and a polarizing material formed on the support plate.

Moreover, it is preferable that the protective film is further formed on the said polarizing film.

Then, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

First, an organic light emitting diode display according to an exemplary embodiment will be described in detail with reference to the accompanying drawings.

1 is a layout view of an organic light emitting panel of an organic light emitting diode display according to an exemplary embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG. 1, and FIG. 3 is III-III of FIG. 1. Is a cross-sectional view taken along a line.

The polarizing film 50 is formed on the insulating substrate 110 with a thickness d of 0.01 to 100 μm, and the blocking layer 111 is formed of silicon oxide or the like on the polarizing film 50 and protects the surface of the polarizing film. Formed.

The insulating substrate 110 is made of a flexible plastic substrate, glass substrate, or steel foil. The polarization film 50 minimizes the influence of the reflected light to increase the contrast ratio of the organic light emitting display device.

The polysilicon layers 153a, 154a, 155a, 153b, 154b, 155b, and 157 are formed on the blocking layer 111. The polysilicon layers 153a, 154a, 155a, 153b, 154b, 155b, and 157 may include the first transistor portions 153a, 154a, 155a, the second transistor portions 153b, 154b, 155b, and the storage electrode portion 157. Include. The source region (first source region 153a) and the drain region (first drain region, 155a) of the first transistor portions 153a, 154a, and 155a are doped with n-type impurities, and the second transistor portions 153b and 154b. The source region (second source region 153b) and the drain region (second drain region 155b) of 155b are doped with p-type impurities. In this case, depending on the driving conditions, the first source region 153a and the drain region 155a may be doped with p-type impurities, and the second source region 153b and the drain region 155b may be doped with n-type impurities. .

A gate insulating layer 140 made of silicon oxide or silicon nitride is formed on the polycrystalline silicon layers 153a, 154a, 155a, 153b, 154b, 155b, and 157. A gate line 121 made of a metal such as Al, first and second gate electrodes 123a and 123b, and a storage electrode 133 are formed on the gate insulating layer 140. The first gate electrode 123a is formed in the shape of a branch of the gate line 121, and overlaps the channel portion (first channel portion 154a) of the first transistor, and the second gate electrode 123b is a gate line ( 121 is overlapped with the channel portion (second channel portion 154b) of the second transistor. The storage electrode 133 is connected to the second gate electrode 123b and overlaps the storage electrode portion 157 of the polysilicon layer.

An interlayer insulating layer 801 is formed on the gate line 121, the first and second gate electrodes 123a and 123b, and the storage electrode 133, and the first and second data lines 171a and 171b, first and second source electrodes 173a and 173b, a drain electrode 175a, and a pixel electrode 190 are formed. The first source electrode 173a is connected to the first source region 153a as a branch of the first data line 171a through a contact hole 181 penetrating through the interlayer insulating film 801 and the gate insulating film 140. The second source electrode 173b is a branch of the second data line 171b and a second source region 153b through a contact hole 184 penetrating through the interlayer insulating film 801 and the gate insulating film 140. It is connected. The drain electrode 175a contacts the first drain region 155a and the second gate electrode 123b through the contact holes 182 and 183 penetrating the interlayer insulating layer 801 and the gate insulating layer 140 to connect them. Doing. The pixel electrode 190 is connected to the second drain region 155b through the contact hole 185 penetrating the interlayer insulating film 801 and the gate insulating film 140, and the data wires 171a, 171b, 173a, and 173b. , 175a, 175b). The data wires 171a, 171b, 173a, 173b, 175a, and 175b and the pixel electrode 190 are preferably formed of a material having excellent reflectivity such as aluminum. However, if necessary, the pixel electrode 190 may be formed of a transparent insulating material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

On the other hand, the second data line 171b overlaps the sustain electrode 133.

A partition wall 802 made of an organic insulating material is formed on the data wires 171a, 171b, 173a, 173b, 175a, and 175b and the pixel electrode 190. The partition 802 surrounds the pixel electrode 190 to define a region in which the organic EL layer 70 is to be filled. The partition wall 802 serves as a light shielding film by exposing and developing a photosensitive agent including a black pigment, and at the same time, the forming process may be simplified. An organic EL layer 70 is formed in an area on the pixel electrode 190 surrounded by the partition 802. The organic EL layer 70 is made of an organic material that emits light of any one of red, green, and blue, and the red, green, and blue organic EL layers 70 are repeatedly arranged in sequence.

The buffer layer 803 is formed on the organic EL layer 70 and the partition wall 802. The buffer layer 803 may be omitted as necessary.

The common electrode 270 is formed on the buffer layer 803. The common electrode 270 is made of a transparent conductive material such as ITO or IZO. If the pixel electrode 190 is made of a transparent conductive material such as ITO or IZO, the common electrode 270 is formed of a metal having good reflectivity such as aluminum.

Although not shown, an auxiliary electrode may be formed of a metal having low resistance to compensate for the conductivity of the common electrode 270. The auxiliary electrode may be formed between the common electrode 270 and the buffer layer 803 or on the reference electrode 270, and may be formed in a matrix shape along the partition wall 802 so as not to overlap the organic EL layer 70. Do. Here, the second data line 171b is connected to a constant voltage power supply.

The encapsulation 80 for protecting the common electrode 270 is formed on the common electrode 270 to a thickness of about 200 μm.

The driving of such an organic light emitting diode display will be briefly described.

When an on pulse is applied to the gate line 121, the first transistor is turned on, and an image signal voltage applied through the first data line 171a is transferred to the second gate electrode 123b. When the image signal voltage is applied to the second gate electrode 123b, the second transistor is turned on so that a current transmitted through the second data line 171b is transferred through the pixel electrode 190 and the organic EL layer 70 to the common electrode ( 270). The organic EL layer 70 emits light in a specific wavelength band when current flows. The amount of light emitted by the organic EL layer 70 varies depending on the amount of current flowing, thereby changing the luminance. At this time, the amount of current that the second transistor can flow is determined by the magnitude of the image signal voltage transmitted through the first transistor.

In the case of a conventional organic light emitting display device having a separate polarizing plate having a thickness of about 130 μm to 250 μm, the organic light emitting display panel has a thickness of about 500 μm, and the encapsulation layer 80 has a thickness of about 200 μm. It is about 1mm. However, as shown in one embodiment of the present invention, when the coated polarizing film 50 is used, the thickness of the organic light emitting panel including the polarizing film 50 of 0.01 to 100 μm is about 500 μm, and the encapsulation layer ( Since the thickness of 80) is about 200 μm, the total thickness becomes about 700 to 900 μm, so that the thickness can be manufactured in several μm, and thus, a thickness reduction effect of about 100 to 200 μm can be seen.

In addition, the organic light emitting diode display is very flexible and easily bent to resist impact. However, when the conventional thick polarizer is attached to the organic light emitting diode display, when bending the organic light emitting diode display, bending stress is sharply increased at the interface between the polarizer and the substrate, and thus hardly bends. Therefore, as shown in an embodiment of the present invention, flexibility can be maintained by coating and forming the polarizing film 50 on the insulating substrate during the manufacturing process of the organic light emitting display device.

In addition, by adjusting the thickness of the coating polarizing film 50, the polarizing film and the transmittance of the organic light emitting diode display can be easily adjusted, thereby improving the light efficiency.

Table 1 below shows the transmittance and polarization degree according to the thickness of the coated polarizing film.

TABLE 1

Thickness (nm) Permeability (%) % Polarization 100 62.2 41.4 200 49.6 71.2 400 40.3 94.1 600 36.4 98.9 800 33.5 99.8

That is, as the thickness of the polarizing film increases, the degree of polarization is improved and the transmittance is decreased.

In this way, the optical properties such as transmittance, reflectance and color coordinates can be adjusted according to the coating thickness of the polarizing film, and the polarization degree can be adjusted to 30% to 99.9%.

Next, a method of manufacturing the organic light emitting display device will be described with reference to FIGS. 4A to 7C and FIGS. 1 to 3.

4A, 5A, 6A, and 7A are layout views of organic light emitting panels in each step of manufacturing an organic light emitting display device according to an embodiment of the present invention, and FIGS. 4B to 7B are IVb- of FIG. 4A, respectively. Sectional drawing of the IVb 'line, the Vb-Vb' line of FIG. 5A, the VIb-VIb 'line of FIG. 6A, and the VIIb-VIIb' line of FIG. 7A, and FIG. 4C-FIG. 7C are the IVc-IVc 'line, Vc-Vc Sectional drawing about the line | wire, a VIc-VIc 'line, and a VIIc-VIIc' line | wire.

First, as shown in FIGS. 4A to 4C, the polarizing film 50 is formed by coating a polarizing material having a polarizing property to a thickness of 0.01 to 100 μm on the insulating substrate 110. Then, silicon oxide or the like is deposited on the polarizing film to form a blocking layer 111, and an amorphous silicon layer is deposited on the blocking layer 111. Deposition of the amorphous silicon layer may be performed by low temperature chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVE), or sputtering. Subsequently, the amorphous silicon layer is converted into polycrystalline silicon by laser heat treatment.

Next, the polycrystalline silicon layer is photo-etched to form the first and second transistor parts 150a and 150b and the storage electrode part 157.

Next, as shown in FIGS. 5A to 5C, the gate insulating layer 140 is deposited on the polycrystalline silicon layers 150a, 150b, and 157. Subsequently, the gate metal layer 120 is deposited, the photosensitive film is coated, exposed, and developed to form the first photoresist film pattern PR1. By etching the gate metal layer 120 using the first photoresist pattern PR1 as a mask, the second gate electrode 123b and the storage electrode 133 are formed, and the second transistor portion 150b is exposed to the polycrystalline silicon layer. The p-type impurity ions are implanted to form the second source region 153b and the second drain region 155b. In this case, the polycrystalline silicon layer of the second transistor unit 150a is covered and protected by the first photoresist pattern PR1 and the gate metal layer 120.

Next, as shown in FIGS. 6A to 6C, the first photoresist pattern PR1 is removed, the photoresist is newly applied, exposed to light, and developed to form a second photoresist pattern PR2. The gate metal layer 120 is etched using the second photoresist pattern PR2 as a mask to form the first gate electrode 123a and the gate line 121, and to the exposed first polycrystalline silicon layer 150a. The n-type impurity ions are implanted to form the first source region 153a and the first drain region 155a. At this time, the second transistor unit 150a is covered by the second photoresist pattern PR2 and protected.

Next, as illustrated in FIGS. 7A to 7C, the interlayer insulating film 801 is stacked on the gate wirings 121, 123a, 123b, and 133 and photo-etched to form the first source region 173a and the first drain region 175a. Contact holes 183 exposing the second source region 173b and the second drain region 175b, and contact holes 183 exposing one end of the second gate electrode 123b. Form.

Next, the data metal layer is stacked and photo-etched to form the data wires 171a, 171b, 173a, 173b, and 175a and the pixel electrode 190. In this case, when the pixel electrode is formed of a transparent conductive material such as ITO or IZO, the pixel electrode is formed through a photolithography process separate from the data lines 171a, 171b, 173a, 173b, and 175a.

Next, as shown in FIGS. 1 to 3, an organic layer including a black pigment is coated on the data wires 171a, 171b, 173a, 173b, and 175a, and exposed and developed to form a partition wall 802, and each pixel region is formed. An organic EL layer 70 is formed on the substrate. At this time, the organic EL layer 70 usually has a multilayer structure. The organic EL layer 70 is formed through masking, deposition, and inkjet printing.

Next, a conductive organic material is coated on the organic EL layer 70 to form a buffer layer 803, and ITO or IZO is deposited on the buffer layer 803 to form a common electrode 270.

At this time, although not shown, the auxiliary electrode may be formed of a low resistance material such as aluminum before or after the reference electrode 270 is formed. When the pixel electrode 190 is formed of a transparent conductive material, the common electrode 270 is formed of a metal having excellent reflectivity.

An encapsulation 80 for protecting the common electrode 270 is formed on the common electrode 270 to a thickness of about 200 μm.

An organic light emitting diode display according to another exemplary embodiment of the present invention is illustrated in FIGS. 8 and 9. Here, the same reference numerals as in the above-described drawings indicate the same members having the same function.

8 and 9 are cross-sectional views of an organic light emitting diode display according to another exemplary embodiment. FIG. 8 is a cross-sectional view taken along line II-II ′ of FIG. 1, and FIG. 9 is III-III of FIG. 1. Is a cross-sectional view taken along a line.

8 and 9, a blocking layer 111 made of silicon oxide or the like is formed on the insulating substrate 110. The insulating substrate 110 is made of a flexible plastic substrate, glass substrate, or steel foil.

The polysilicon layers 153a, 154a, 155a, 153b, 154b, 155b, and 157 are formed on the blocking layer 111. The polysilicon layers 153a, 154a, 155a, 153b, 154b, 155b, and 157 may include the first transistor portions 153a, 154a, 155a, the second transistor portions 153b, 154b, 155b, and the storage electrode portion 157. Include. The source region (first source region 153a) and the drain region (first drain region, 155a) of the first transistor portions 153a, 154a, and 155a are doped with n-type impurities, and the second transistor portions 153b and 154b. The source region (second source region 153b) and the drain region (second drain region 155b) of 155b are doped with p-type impurities. In this case, depending on the driving conditions, the first source region 153a and the drain region 155a may be doped with p-type impurities, and the second source region 153b and the drain region 155b may be doped with n-type impurities. .

A gate insulating layer 140 made of silicon oxide or silicon nitride is formed on the polycrystalline silicon layers 153a, 154a, 155a, 153b, 154b, 155b, and 157. A gate line 121 made of a metal such as Al, first and second gate electrodes 123a and 123b, and a storage electrode 133 are formed on the gate insulating layer 140. The first gate electrode 123a is formed in the shape of a branch of the gate line 121, and overlaps the channel portion (first channel portion 154a) of the first transistor, and the second gate electrode 123b is a gate line ( 121 is overlapped with the channel portion (second channel portion 154b) of the second transistor. The storage electrode 133 is connected to the second gate electrode 123b and overlaps the storage electrode portion 157 of the polysilicon layer.

An interlayer insulating layer 801 is formed on the gate line 121, the first and second gate electrodes 123a and 123b, and the storage electrode 133, and the first and second data lines 171a and 171b, first and second source electrodes 173a and 173b, a drain electrode 175a, and a pixel electrode 190 are formed. The first source electrode 173a is connected to the first source region 153a as a branch of the first data line 171a through a contact hole 181 penetrating through the interlayer insulating film 801 and the gate insulating film 140. The second source electrode 173b is a branch of the second data line 171b and a second source region 153b through a contact hole 184 penetrating through the interlayer insulating film 801 and the gate insulating film 140. It is connected. The drain electrode 175a contacts the first drain region 155a and the second gate electrode 123b through the contact holes 182 and 183 penetrating the interlayer insulating layer 801 and the gate insulating layer 140 to connect them. Doing. The pixel electrode 190 is connected to the second drain region 155b through the contact hole 185 penetrating the interlayer insulating film 801 and the gate insulating film 140, and the data wires 171a, 171b, 173a, and 173b. , 175a, 175b). The data wires 171a, 171b, 173a, 173b, 175a, and 175b and the pixel electrode 190 are preferably formed of a material having excellent reflectivity such as aluminum. However, if necessary, the pixel electrode 190 may be formed of a transparent insulating material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

On the other hand, the second data line 171b overlaps the sustain electrode 133.

A partition wall 802 made of an organic insulating material is formed on the data wires 171a, 171b, 173a, 173b, 175a, and 175b and the pixel electrode 190. The partition 802 surrounds the pixel electrode 190 to define a region in which the organic EL layer 70 is to be filled. The partition wall 802 serves as a light shielding film by exposing and developing a photosensitive agent including a black pigment, and at the same time, the forming process may be simplified. An organic EL layer 70 is formed in an area on the pixel electrode 190 surrounded by the partition 802. The organic EL layer 70 is made of an organic material that emits light of any one of red, green, and blue, and the red, green, and blue organic EL layers 70 are repeatedly arranged in sequence.

The buffer layer 803 is formed on the organic EL layer 70 and the partition wall 802. The buffer layer 803 may be omitted as necessary.

The common electrode 270 is formed on the buffer layer 803. The common electrode 270 is made of a transparent conductive material such as ITO or IZO. If the pixel electrode 190 is made of a transparent conductive material such as ITO or IZO, the common electrode 270 is formed of a metal having good reflectivity such as aluminum.

Although not shown, an auxiliary electrode may be formed of a metal having low resistance to compensate for the conductivity of the common electrode 270. The auxiliary electrode may be formed between the common electrode 270 and the buffer layer 803 or on the reference electrode 270. The auxiliary electrode may be formed in a matrix shape along the partition wall 802 so as not to overlap the organic EL layer 70. Do. Here, the second data line 171b is connected to a constant voltage power supply.

The encapsulation 80 for protecting the common electrode 270 is formed on the common electrode 270 to a thickness of about 200 μm.                     

The polarizing film 60 is formed under the insulating substrate 110 at a thickness d of 0.01 to 100 μm. The polarizer 60 may minimize the influence of reflected light to increase the contrast ratio of the organic light emitting diode display.

The polarizing film 60 may be formed by coating a polarizing material under the insulating substrate 110, or may be made of a support plate having flexibility and a polarizing material formed on the support plate.

The protective film 90 is formed on the polarizing film 60 to prevent the surface of the polarizing film 60 from being damaged by external impact or scratches.

As described above, the polarization film 60 may be coated on the outside of the insulating substrate to maintain the flexibility of the OLED display.

Although the preferred embodiments of the present invention have been described in detail above, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

The organic light emitting diode display according to the present invention has the advantage of having a flexible and thin thickness by forming a coated polarizing film on or below the flexible insulating substrate.                     

In addition, by forming a coating polarizing film and having a higher heat resistance than the conventional polarizing plate can reduce the cost about 3 to 4 times.

In addition, by adjusting the thickness of the coated polarizing film, the transmittance and the polarization degree can be easily adjusted, thereby improving the light efficiency.

Claims (5)

Insulation board, A polarizing film formed on the insulating substrate, A polycrystalline silicon layer formed on the polarizing film, A gate insulating film formed on the polycrystalline silicon layer, A gate wiring formed on the gate insulating film, An interlayer insulating film formed on the gate wiring, A data line formed on the interlayer insulating film, A pixel electrode formed of the same layer as the data line, An organic EL layer formed on a predetermined region on the pixel electrode; Common electrode formed on the organic EL layer Including, The polarizing film is an organic light emitting display device having a thickness of 0.01 to 100 ㎛. In claim 1, The insulating substrate includes a flexible plastic substrate, a glass substrate, or a steel thin film. Insulation board, A polycrystalline silicon layer formed on the insulating substrate, A gate insulating film formed on the polycrystalline silicon layer, A gate wiring formed on the gate insulating film, An interlayer insulating film formed on the gate wiring, A data line formed on the interlayer insulating film, A pixel electrode formed of the same layer as the data line, An organic EL layer formed on a predetermined region on the pixel electrode; A common electrode formed on the organic EL layer, Polarizing film formed under the insulating substrate Including, The polarizing film is an organic light emitting display device having a thickness of 0.01 to 100 ㎛. In claim 3, The polarizing film is Flexible support plate, An organic light emitting display device comprising a polarizing material formed on the support plate. In claim 3, An OLED display further comprising a passivation layer on the polarizer.

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