KR20060104877A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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KR20060104877A
KR20060104877A KR1020050027363A KR20050027363A KR20060104877A KR 20060104877 A KR20060104877 A KR 20060104877A KR 1020050027363 A KR1020050027363 A KR 1020050027363A KR 20050027363 A KR20050027363 A KR 20050027363A KR 20060104877 A KR20060104877 A KR 20060104877A
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etching
hard mask
layer
semiconductor device
forming
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박정우
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주식회사 하이닉스반도체
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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L15/00—Chemical aspects of, or use of materials for, bandages, dressings or absorbent pads
    • A61L15/16—Bandages, dressings or absorbent pads for physiological fluids such as urine or blood, e.g. sanitary towels, tampons
    • A61L15/42—Use of materials characterised by their function or physical properties
    • A61L15/44—Medicaments
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F13/00—Bandages or dressings; Absorbent pads
    • A61F13/15—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators
    • A61F13/51—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators characterised by the outer layers
    • A61F2013/51002—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators characterised by the outer layers with special fibres
    • A61F2013/51023—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators characterised by the outer layers with special fibres being polymeric fibres
    • A61F2013/51035—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators characterised by the outer layers with special fibres being polymeric fibres being biodegradable, e.g. Rayon, polylactate, dioxanone
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
    • A61F13/00—Bandages or dressings; Absorbent pads
    • A61F13/15—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators
    • A61F13/53—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators characterised by the absorbing medium
    • A61F2013/530007—Absorbent pads, e.g. sanitary towels, swabs or tampons for external or internal application to the body; Supporting or fastening means therefor; Tampon applicators characterised by the absorbing medium being made from pulp
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2300/00—Biologically active materials used in bandages, wound dressings, absorbent pads or medical devices
    • A61L2300/10—Biologically active materials used in bandages, wound dressings, absorbent pads or medical devices containing or releasing inorganic materials
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2300/00—Biologically active materials used in bandages, wound dressings, absorbent pads or medical devices
    • A61L2300/10—Biologically active materials used in bandages, wound dressings, absorbent pads or medical devices containing or releasing inorganic materials
    • A61L2300/108—Elemental carbon, e.g. charcoal
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2300/00—Biologically active materials used in bandages, wound dressings, absorbent pads or medical devices
    • A61L2300/20—Biologically active materials used in bandages, wound dressings, absorbent pads or medical devices containing or releasing organic materials
    • A61L2300/30—Compounds of undetermined constitution extracted from natural sources, e.g. Aloe Vera

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Abstract

본 발명은 집적도가 높은 게이트 전극의 패터닝 공정이 용이한 반도체 소자 제조 방법을 제공하기 위한 것으로, 이를 위한 본 발명의 반도체 소자 제조 방법은 기판 상에 피식각층을 형성하는 단계; 상기 피식각층 상에 폴리머 계열의 하드마스크를 형성하는 단계; 상기 하드마스크 상에 SiON층을 형성하는 단계; 상기 SiON층 상에 포토레지스트 패턴을 형성하는 단계; 상기 포토레지스트 패턴을 식각 마스크로 상기 SiON층을 식각하는 단계; 상기 SiON층을 식각 베리어층으로 하여 상기 하드마스크를 식각하는 단계; 및 상기 하드마스크를 식각 베리어로 상기 피식각층을 식각하는 단계 를 포함한다.The present invention is to provide a method for manufacturing a semiconductor device that is easy to pattern the gate electrode having a high integration, the method for manufacturing a semiconductor device of the present invention comprises the steps of: forming an etched layer on a substrate; Forming a polymer-based hard mask on the etched layer; Forming a SiON layer on the hard mask; Forming a photoresist pattern on the SiON layer; Etching the SiON layer using the photoresist pattern as an etching mask; Etching the hard mask using the SiON layer as an etching barrier layer; And etching the etching target layer using the hard mask as an etching barrier.

SiLK, 하드마스크, O2 플라즈마 SiLK, Hard Mask, O2 Plasma

Description

반도체 소자 제조 방법{METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE} Semiconductor device manufacturing method {METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE}

도 1a 및 도 1b는 종래 기술에 따른 반도체 소자 제조 방법을 도시한 단면도,1A and 1B are cross-sectional views illustrating a method of manufacturing a semiconductor device according to the prior art;

도 2a 내지 도 2e는 본 발명의 일실시예에 따른 반도체 소자 제조 방법을 도시한 단면도. 2A through 2E are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.

* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

21 : 반도체 기판 22 : 게이트 산화막 21 semiconductor substrate 22 gate oxide film

23 : 폴리실리콘막 24 : 텅스텐막23 polysilicon film 24 tungsten film

25 : 게이트 하드마스크 26 : 베리어층25: gate hard mask 26: barrier layer

27 : 반사방지막 28 : 포토레지스트 패턴27: antireflection film 28: photoresist pattern

본 발명은 반도체 제조 기술에 관한 것으로, 특히 반도체 소자의 게이트 하 드마스크로 저유전 물질을 이용한 반도체 소자의 게이트 패턴 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing technology, and more particularly, to a method of forming a gate pattern of a semiconductor device using a low dielectric material as a gate hard mask of the semiconductor device.

반도체 소자의 집적도가 높아지며 더 작은 마스크를 패터닝하기 위해 I-Line에서 KrF 또는 ArF를 사용하는데, 포토레지스트 두께가 점점 낮아짐으로써, 식각 공정시 포토레지스트가 부족하게 되어 공정 상의 어려움이 발생한다.In order to increase the degree of integration of semiconductor devices and to pattern smaller masks, KrF or ArF is used in the I-Line. As the thickness of the photoresist decreases gradually, the photoresist is insufficient during the etching process, resulting in process difficulties.

도 1a 및 도 1b는 종래 기술에 따른 반도체 소자 제조 방법을 도시한 단면도이다.1A and 1B are cross-sectional views illustrating a method of manufacturing a semiconductor device according to the prior art.

도 1a에 도시된 바와 같이, 반도체 기판(11) 상에 게이트 산화막(12)을 형성하고, 게이트 산화막(12) 상에 게이트 전도막으로 폴리실리콘막(13)과 텅스텐막(14)을 적층 형성한다. As shown in FIG. 1A, a gate oxide film 12 is formed on a semiconductor substrate 11, and a polysilicon film 13 and a tungsten film 14 are stacked and formed as a gate conductive film on the gate oxide film 12. do.

이어서, 텅스텐막(14) 상에 게이트 하드마스크(15)를 증착한다. 이 때, 게이트 하드마스크(15)는 질화막 계열 또는 폴리실리콘 계열의 물질을 사용하며, 최대 4000Å∼5000Å의 두께로 형성할 수 있다.Subsequently, a gate hard mask 15 is deposited on the tungsten film 14. In this case, the gate hard mask 15 may be formed of a nitride film-based or polysilicon-based material and may have a thickness of up to 4000 kPa to 5000 kPa.

이어서, 게이트 하드마스크(15) 상에 반사방지막(16)과 포토레지스트 패턴(17)을 형성한다. 이 때, 포토레지스트 패턴(17)은 2000Å∼4000Å의 두께로 형성한다.Subsequently, the antireflection film 16 and the photoresist pattern 17 are formed on the gate hard mask 15. At this time, the photoresist pattern 17 is formed to a thickness of 2000 kPa to 4000 kPa.

도 1b에 도시된 바와 같이, 포토레지스트 패턴(17)을 식각 베리어로 반사방지막(16a)과 게이트 하드마스크(15a)를 식각한다.As shown in FIG. 1B, the anti-reflection film 16a and the gate hard mask 15a are etched using the photoresist pattern 17 as an etch barrier.

이어서, 포토레지스트 패턴(17)과 반사방지막(16a)을 제거하고, 게이트 하드마스크(15a)를 식각 베리어로 텅스텐막(14a), 폴리실리콘막(13a), 게이트 산화막 (12a)을 차례로 패터닝하여 게이트 패턴을 형성한다.Subsequently, the photoresist pattern 17 and the anti-reflection film 16a are removed, and the tungsten film 14a, the polysilicon film 13a, and the gate oxide film 12a are sequentially patterned using the gate hard mask 15a as an etching barrier. A gate pattern is formed.

상술한 바와 같이, 게이트 하드마스크로 질화막 계열 또는 폴리실리콘 계열의 물질을 이용하는데, 하드마스크를 일정 두께(4000Å∼5000Å) 이상으로 높이기 힘들고, 패터닝이 어려우며, 패터닝 후 패턴 잔유물을 제거가 용이하지 않고 이후 층간절연막 갭필 불량과 같은 문제가 있다.As described above, a nitride-based or polysilicon-based material is used as the gate hard mask, and it is difficult to raise the hard mask to a predetermined thickness (4000Å to 5000Å) or more, difficult to pattern, and to easily remove the pattern residue after patterning. Thereafter, there are problems such as poor interlayer insulating film gapfill.

본 발명은 상기한 종래 기술의 문제점을 해결하기 위해 제안된 것으로, 집적도가 높은 게이트 전극의 패터닝 공정이 용이한 반도체 소자 제조 방법을 제공하는데 그 목적이 있다.The present invention has been proposed to solve the above problems of the prior art, and an object of the present invention is to provide a method for manufacturing a semiconductor device which is easy to pattern a gate electrode having a high degree of integration.

상기 목적을 달성하기 위한 일 특징적인 본 발명의 반도체 소자 제조 방법은 기판 상에 피식각층을 형성하는 단계, 상기 피식각층 상에 폴리머 계열의 하드마스크를 형성하는 단계, 상기 하드마스크 상에 SiON층을 형성하는 단계, 상기 SiON층 상에 포토레지스트 패턴을 형성하는 단계, 상기 포토레지스트 패턴을 식각 마스크로 상기 SiON층을 식각하는 단계, 상기 SiON층을 식각 베리어층으로 하여 상기 하드마스크를 식각하는 단계, 및 상기 하드마스크를 식각 베리어로 상기 피식각층을 식각하는 단계를 포함한다.According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method including forming an etching target layer on a substrate, forming a polymer-based hard mask on the etching layer, and forming a SiON layer on the hard mask. Forming a photoresist pattern on the SiON layer, etching the SiON layer using the photoresist pattern as an etching mask, etching the hard mask using the SiON layer as an etching barrier layer, And etching the etching target layer using the hard mask as an etching barrier.

이하, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부 도면을 참조하여 설명하기로 한다.Hereinafter, the most preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the technical idea of the present invention. .

도 2a 내지 도 2e는 본 발명의 일실시예에 따른 반도체 소자 제조 방법을 도시한 단면도이다.2A through 2E are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.

도 2a에 도시된 바와 같이, 반도체 기판(21) 상에 열성장을 실시하여 게이트 산화막(22)을 형성한다.As shown in FIG. 2A, thermal growth is performed on the semiconductor substrate 21 to form a gate oxide film 22.

이어서, 게이트 산화막(22) 상에 게이트 전도막으로 폴리실리콘막(23), 텅스텐막(24)을 적층 형성하고, 텅스텐막(24) 상에 게이트 하드마스크(25)로 저유전 물질을 사용한다.Subsequently, a polysilicon film 23 and a tungsten film 24 are laminated on the gate oxide film 22 as a gate conductive film, and a low dielectric material is used as the gate hard mask 25 on the tungsten film 24. .

이 때, 게이트 하드마스크(25)로 저유전 물질인 SiLK를 사용하며, 5000Å∼6000Å두께로 형성한다.At this time, SiLK, which is a low dielectric material, is used as the gate hard mask 25, and is formed to have a thickness of 5000 k?

이어서, 게이트 하드마스크(25) 상에 베리어층(26)을 형성한다. 이 때, 베리어층(26)은 실리콘옥시나이트라이드(SiON)을 사용한다.Subsequently, a barrier layer 26 is formed on the gate hard mask 25. At this time, the barrier layer 26 uses silicon oxynitride (SiON).

계속해서, 베리어층(26) 상에 반사방지막(27)을 증착하고, 반사방지막(27) 상에 포토레지스트 패턴(28)을 형성한다.Subsequently, an antireflection film 27 is deposited on the barrier layer 26, and a photoresist pattern 28 is formed on the antireflection film 27.

도 2b에 도시된 바와 같이, 포토레지스트 패턴(28)을 식각 베리어로 반사방지막(27a)과 베리어층(26a)을 차례로 식각한다.As shown in FIG. 2B, the anti-reflection film 27a and the barrier layer 26a are sequentially etched using the photoresist pattern 28 as an etching barrier.

도 2c에 도시된 바와 같이, 반사방지막(27a)과 베리어층(26a) 식각 후, 포토레지스트 패턴(28a)과 반사방지막(27a)을 스트립한다. As illustrated in FIG. 2C, after the anti-reflection film 27a and the barrier layer 26a are etched, the photoresist pattern 28a and the anti-reflection film 27a are stripped.

이어서, O2 플라즈마를 사용하여 게이트 하드마스크(25a)를 식각한다. 이 때, O2 플라즈마는 SiLK에 대한 식각 선택비가 매우 높아, 게이트 패턴의 메인 식각시 베리어 역할을 하는 SiLK의 높이를 종래 질화막 또는 폴리실리콘막에 비해 높일 수 있으며, O2 가스를 메인으로 하여 N2, NH3의 가스를 사용하여 건식 식각한다.Subsequently, the gate hard mask 25a is etched using an O 2 plasma. At this time, O 2 plasma is selected etching of the SiLK ratio is very high and can be increased compared with the height of SiLK with the conventional nitride film or a polysilicon film for the barrier role during the main etch of the gate pattern, and the O 2 gas to the main N 2 , dry etching using a gas of NH 3 .

또한, SiLK 식각시 베리어층(26a)의 두께를 얇게 형성하여 작은 사이즈의 패터닝에도 유리하다.In addition, since the barrier layer 26a is thinly formed during the SiLK etching, the barrier layer 26a may be thinly patterned.

도 2d에 도시된 바와 같이, 게이트 하드마스크(25a)를 식각 베리어로 텅스텐막(24a), 폴리실리콘막(23a), 게이트 산화막(22a)을 차례로 패터닝한다.As shown in FIG. 2D, the tungsten film 24a, the polysilicon film 23a, and the gate oxide film 22a are sequentially patterned using the gate hard mask 25a as an etching barrier.

도 2e에 도시된 바와 같이, 게이트 패터닝이 끝나고, O2 플라즈마를 사용하여 게이트 하드마스크(25a)를 제거한다.As shown in FIG. 2E, gate patterning is complete and the gate hardmask 25a is removed using an O 2 plasma.

SiLK는 폴리머 계열로 포토레지스트와 비슷한 성분으로 포토레지스트와 마찬가지로 O2 플라즈마에서 제거가 용이하다.SiLK is a polymer-based component similar to photoresist and can be easily removed from O 2 plasma like photoresist.

상술한 바와 같이, 게이트 하드마스크로 SiLK를 적용하여 소자의 미세 패터닝에도 유리하고, 포토레지스트와 성분이 유사하여 O2 플라즈마를 이용한 식각 잔유물 제거도 용이하다.As described above, by applying SiLK as a gate hard mask, it is also advantageous for fine patterning of the device, and similar components to the photoresist make it easy to remove etch residues using O 2 plasma.

본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여 야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위 내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.Although the technical spirit of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

상술한 본 발명은 게이트 하드마스크로 SiLK를 사용하여 미세 패터닝에도 유리하며, O2 플라즈마를 사용한 식각 잔유물 제거가 용이한 효과를 얻을 수 있다.The present invention described above is advantageous for fine patterning using SiLK as a gate hard mask, and an effect of easily removing etch residues using O 2 plasma can be obtained.

또한, 소자의 리프레시 특성을 개선할 수 있다.In addition, the refresh characteristics of the device can be improved.

Claims (5)

기판 상에 피식각층을 형성하는 단계;Forming an etched layer on the substrate; 상기 피식각층 상에 폴리머 계열의 하드마스크를 형성하는 단계;Forming a polymer-based hard mask on the etched layer; 상기 하드마스크 상에 SiON층을 형성하는 단계;Forming a SiON layer on the hard mask; 상기 SiON층 상에 포토레지스트 패턴을 형성하는 단계;Forming a photoresist pattern on the SiON layer; 상기 포토레지스트 패턴을 식각 마스크로 상기 SiON층을 식각하는 단계;Etching the SiON layer using the photoresist pattern as an etching mask; 상기 SiON층을 식각 베리어층으로 하여 상기 하드마스크를 식각하는 단계; 및Etching the hard mask using the SiON layer as an etching barrier layer; And 상기 하드마스크를 식각 베리어로 상기 피식각층을 식각하는 단계Etching the etching layer using the hard mask as an etching barrier 를 포함하는 반도체 소자 제조 방법.Semiconductor device manufacturing method comprising a. 제 1 항에 있어서,The method of claim 1, 상기 하드마스크는 SiLK를 사용하는 반도체 소자 제조 방법.The hard mask is a semiconductor device manufacturing method using SiLK. 제 1 항에 있어서,The method of claim 1, 상기 하드마스크는 5000Å∼6000Å의 두께로 형성하는 반도체 소자 제조 방법.The hard mask is a semiconductor device manufacturing method to form a thickness of 5000 ~ 6000Å. 제 1 항에 있어서,The method of claim 1, 상기 하드마스크 식각은 O2 가스를 메인 가스로하여 N2, NH3 가스를 첨가하여 건식 식각으로 수행하는 반도체 소자 제조 방법.The hard mask etching method is a semiconductor device manufacturing method is performed by dry etching by adding the N 2 , NH 3 gas using O 2 gas as the main gas. 제 1 항에 있어서,The method of claim 1, 상기 하드마스크는 O2 플라즈마를 사용하여 제거하는 반도체 소자 제조 방법.The hard mask is a semiconductor device manufacturing method to remove using O 2 plasma.
KR1020050027363A 2005-03-31 2005-03-31 Method for manufacturing semiconductor device KR20060104877A (en)

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