KR20060082944A - Method of etching an anti refletion layer in a semiconductor device - Google Patents
Method of etching an anti refletion layer in a semiconductor device Download PDFInfo
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- KR20060082944A KR20060082944A KR1020050003317A KR20050003317A KR20060082944A KR 20060082944 A KR20060082944 A KR 20060082944A KR 1020050003317 A KR1020050003317 A KR 1020050003317A KR 20050003317 A KR20050003317 A KR 20050003317A KR 20060082944 A KR20060082944 A KR 20060082944A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000005530 etching Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000007789 gas Substances 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 9
- 229910052734 helium Inorganic materials 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 10
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 abstract description 3
- 235000002017 Zea mays subsp mays Nutrition 0.000 abstract description 3
- 235000005822 corn Nutrition 0.000 abstract description 3
- 230000003667 anti-reflective effect Effects 0.000 abstract description 2
- 240000008042 Zea mays Species 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 241000209149 Zea Species 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Structural Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
본 발명은 반도체 소자의 반사 방지막 식각 방법에 관한 것으로, 감광막 패턴을 마스크로 유기 반사 방지막을 식각할 때 HBr, He 및 O2 가스의 혼합 가스를 이용하여 유기 반사 방지막을 식각함으로써 유기 반사 방지막 잔류물에 의한 콘 파티클을 방지할 수 있어 반도체 소자의 수율을 크게 향상시킬 수 있는 반도체 소자의 반사 방지막 식각 방법이 제시된다.
The present invention relates to an anti-reflection film etching method of a semiconductor device, wherein an organic anti-reflection film residue is formed by etching an organic anti-reflection film using a mixed gas of HBr, He, and O 2 gases when etching the organic anti-reflection film using a photoresist pattern as a mask. The anti-reflective film etching method of the semiconductor device which can prevent the cone particles due to greatly improve the yield of the semiconductor device is proposed.
유기 반사 방지막, 식각, 잔류물, 콘 파티클, 혼합 가스Organic antireflection film, etch, residue, corn particles, mixed gas
Description
도 1(a) 내지 도 1(c)는 본 발명에 따른 반도체 소자의 반사 방지막 식각 방법을 설명하기 위해 도시한 소자의 단면도.
1 (a) to 1 (c) are cross-sectional views of a device for explaining an anti-reflection film etching method of a semiconductor device according to the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
11 : 반도체 기판 12 : 게이트 산화막11
13 : 폴리실리콘막 14 : 반사 방지막13: polysilicon film 14: antireflection film
15 : 감광막
15 photosensitive film
본 발명은 반도체 소자의 반사 방지막 식각 방법에 관한 것으로, 특히 잔류물이 생성되지 않도록 유기 반사 방지막을 식각함으로써 콘 파티클(corn particle) 이 생성되지 않도록 하는 반도체 소자의 반사 방지막 식각 방법에 관한 것이다.
The present invention relates to an anti-reflection film etching method of a semiconductor device, and more particularly, to an anti-reflection film etching method of a semiconductor device to prevent the generation of corn particles (corn particles) by etching the organic anti-reflection film so that no residue is generated.
반도체 소자의 제조 공정에서 감광막을 이용한 노광 및 현상 공정은 필수적인 공정이다. 그런데, 노광 공정시 하부층의 반사도가 심할 경우 감광막이 원하는 대로 패터닝되지 않기 때문에 감광막을 형성하기 이전에 무기 반사 방지막(Anti Reflection Coating; ARC)을 형성하는 것이 일반적이다. 이때, 무기 반사 방지막으로는 SiON막 및 TiN막을 주로 사용한다. 그러나, 반도체 소자의 고집적화에 따라 무기 반사 방지막으로는 감광막 패턴을 형성하기 어려워지게 되었으므로 이를 대체할 물질이 필요하게 되었고, 최근에는 유기 반사 방지막을 사용하게 되었다.Exposure and development processes using a photosensitive film are essential steps in the manufacturing process of a semiconductor device. However, since the photoresist film is not patterned as desired when the underlying layer has a high reflectivity during the exposure process, an inorganic reflection coating (ARC) is generally formed before the photoresist film is formed. At this time, SiON film and TiN film are mainly used as an inorganic antireflection film. However, due to the high integration of semiconductor devices, it has become difficult to form a photoresist pattern as an inorganic antireflection film. Therefore, a material is required to replace it. Recently, an organic antireflection film has been used.
유기 반사 방지막은 산소 가스를 주로 사용하면서 불소 원자가 첨가된 가스, 예컨데 CF4, C2F6를 이용하여 식각하는데, 때에 따라서 헬륨 가스를 첨가하여 CD를 조절할 수도 있다. 그런데, 유기 반사 방지막을 식각할 경우 반사 방지막에서 배출되는 소오스에 의해 반사 방지막 잔류물이 생성된다. 예를들어 감광막을 마스크로 게이트를 확정하기 위해 폴리실리콘막을 식각할 경우 보통 0.005㎛ 크기의 반사 방지막 잔류물이 생성되어도 KLA등의 검사(inspection) 장비에 검출되지 않고 후속 스페이서 산화막 증착 이후에 콘 파티클(cone particle)로서 검출된다. 즉, 0.005㎛ 크기의 반사 방지막 잔류물은 사이즈가 작아 검출되지 않지만, 스페이서 산화막 증착 이후에 사이즈가 커져 검출된다. 이러한 유기 반사 방지막에 의한 콘 파티클은 STI 공정으로 소자 분리막을 형성할 때, 폴리실리콘막을 패터닝하여 게이트를 확정할 때 등 많은 공정에서 발생된다.
The organic antireflective film is etched using a gas containing fluorine atoms mainly using oxygen gas, for example, CF 4 , C 2 F 6 , and in some cases, CD may be controlled by adding helium gas. However, when the organic anti-reflection film is etched, anti-reflection film residues are generated by the source discharged from the anti-reflection film. For example, when a polysilicon film is etched to fix a gate using a photoresist film as a mask, even if an antireflection film residue of 0.005 탆 size is generated, it is not detected by inspection equipment such as KLA, and after the subsequent spacer oxide film deposition, the cone particle It is detected as a cone particle. That is, the antireflection film residue having a size of 0.005 mu m is not detected because of its small size, but is detected because of its size after the deposition of the spacer oxide film. The cone particles by the organic anti-reflection film are generated in many processes, such as when the device isolation film is formed by the STI process, when the gate is determined by patterning the polysilicon film.
본 발명의 목적은 잔류물이 생성되지 않도록 유기 반사 방지막을 식각함으로써 콘 파티클이 생성되지 않도록 하는 반도체 소자의 반사 방지막 식각 방법을 제공하는데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide an anti-reflection film etching method of a semiconductor device in which cone particles are not generated by etching an organic anti-reflection film so that no residue is generated.
본 발명의 다른 목적은 HBr, He 및 O2 가스의 혼합 가스를 이용하여 유기 반사 방지막을 식각함으로써 패턴 프로파일을 유지할 수 있으면서 잔류물이 발생되지 않도록 하는 반도체 소자의 반사 방지막 식각 방법을 제공하는데 있다.
Another object of the present invention is to provide an anti-reflection film etching method of a semiconductor device in which a residue is not generated while maintaining a pattern profile by etching an organic anti-reflection film using a mixed gas of HBr, He and O 2 gases.
본 발명의 일 실시 예에 따른 반도체 소자의 반사 방지막 식각 방법은 반사 방지막 및 감광막 패턴을 이용하여 사진 및 식각 공정을 실시하여 하부층을 패터닝하는 반도체 소자의 제조 방법에 있어서, 상기 감광막 패턴을 마스크로 상기 반사 방지막을 식각할 때 HBr, He 및 O2 가스의 혼합 가스를 이용하여 상기 반사 방지막을 식각한다.An anti-reflection film etching method of a semiconductor device according to an embodiment of the present invention is a method of manufacturing a semiconductor device by performing a photo-etching process using an anti-reflection film and a photoresist pattern to pattern the lower layer, wherein the photoresist pattern is a mask When etching the anti-reflection film, the anti-reflection film is etched using a mixed gas of HBr, He and O 2 gases.
상기 반사 방지막은 유기 반사 방지막이다.
The antireflection film is an organic antireflection film.
이하, 첨부된 도면을 참조하여 본 발명의 실시 예를 상세히 설명하기로 한 다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1(a) 내지 도 1(c)는 본 발명의 일 실시 예에 따른 반도체 소자의 반사 방지막 식각 방법을 설명하기 위해 도시한 소자의 단면도로서, 게이트 형성 공정을 예로 설명한다.1 (a) to 1 (c) are cross-sectional views of a device for explaining an anti-reflection film etching method of a semiconductor device according to an embodiment of the present invention, and a gate forming process will be described as an example.
도 1(a)를 참조하면, 소정의 구조, 예를들어 STI(Shallow Trench Isolation) 공정에 의해 소자 분리막이 형성되어 소자간이 분리된 반도체 기판(11) 상부에 게이트 산화막(12) 및 폴리실리콘막(13)을 형성한다. 폴리실리콘막(13)의 패터닝 공정시 난반사를 방지하기 위해 폴리실리콘막(13) 상부에 반사 방지막(14)을 형성한 후 감광막(15)을 형성한다. 여기서, 반사 방지막(14)은 유기 반사 방지막으로 형성한다. 게이트 마스크를 이용한 노광 및 현상 공정으로 감광막(15)을 패터닝한다.Referring to FIG. 1A, a device isolation film is formed by a predetermined structure, for example, a shallow trench isolation (STI) process, so that a
도 1(b)를 참조하면, 패터닝된 감광막(15)을 마스크로 반사 방지막(14)을 식각하는데, HBr, He 및 O2 가스가 소정의 비율로 혼합된 가스를 이용하여 반사 방지막(14)을 비등방성 식각한다. 이렇게 하면, 반사 방지막(14) 잔류물이 발생되지 않도록 할 수 있으며, 패터닝된 감광막(15)과 동일한 패턴으로 반사 방지막(14)을 패터닝할 수 있다.Referring to FIG. 1B, the
도 1(b)를 참조하면, 계속된 식각 공정으로 폴리실리콘막(13) 및 게이트 산화막(12)을 식각한 후 감광막(15) 및 반사 방지막(14)을 제거하여 게이트를 확정한다. 그런데, 반사 방지막(14) 식각시 잔류물이 생성되지 않기 때문에 콘 파티클이 생성되지 않는다.
Referring to FIG. 1B, the
한편, 본 발명에 따른 반사 방지막 식각 방법은 유기 반사 방지막을 사용하여 유기 반사 방지막을 식각하는 모든 공정에 적용될 수 있다.
On the other hand, the anti-reflection film etching method according to the present invention can be applied to all processes of etching the organic anti-reflection film using the organic anti-reflection film.
상술한 바와 같이 본 발명에 의하면 유기 반사 방지막을 사용하는 반도체 소자 제조 공정에서 HBr, He 및 O2 가스의 혼합 가스를 이용하여 유기 반사 방지막을 식각함으로써 반사 방지막 잔류물에 의한 콘 파티클을 방지할 수 있어 반도체 소자의 수율을 크게 향상시킬 수 있다.As described above, according to the present invention, cone particles caused by the anti-reflection film residues can be prevented by etching the organic anti-reflection film using a mixed gas of HBr, He, and O 2 gases in the semiconductor device manufacturing process using the organic anti-reflection film. Therefore, the yield of a semiconductor element can be improved significantly.
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| KR1020050003317A KR20060082944A (en) | 2005-01-13 | 2005-01-13 | Method of etching an anti refletion layer in a semiconductor device |
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