KR20060075596A - A board for interrupting gas flow - Google Patents

A board for interrupting gas flow Download PDF

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Publication number
KR20060075596A
KR20060075596A KR1020040114404A KR20040114404A KR20060075596A KR 20060075596 A KR20060075596 A KR 20060075596A KR 1020040114404 A KR1020040114404 A KR 1020040114404A KR 20040114404 A KR20040114404 A KR 20040114404A KR 20060075596 A KR20060075596 A KR 20060075596A
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South Korea
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blocking plate
gas flow
gas
present
peripheral portion
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KR1020040114404A
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Korean (ko)
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김현탁
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동부일렉트로닉스 주식회사
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Priority to KR1020040114404A priority Critical patent/KR20060075596A/en
Publication of KR20060075596A publication Critical patent/KR20060075596A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

본 발명은 가스 흐름 규제용 차단판에 관한 것이다. 본 발명에 따른 가스 흐름 규제용 차단판은 웨이퍼 보트의 외주부에 위치하며 외주부가 가열로의 내측 튜브와 이격되어 설치된다.The present invention relates to a blocking plate for gas flow regulation. The gas flow restricting blocking plate according to the present invention is located at the outer circumference of the wafer boat, and the outer circumference is spaced apart from the inner tube of the heating furnace.

가스, 흐름, 차단판Gas, flow, blocker

Description

가스 흐름 규제용 차단판{A board for interrupting gas flow} A board for interrupting gas flow             

도 1은 종래의 가열로를 개략적으로 나타낸 도면.1 is a view schematically showing a conventional heating furnace.

도 2는 종래의 가스 분사 장치를 개략적으로 나타낸 도면.Figure 2 is a schematic view of a conventional gas injection device.

도 3은 본 발명의 바람직한 일 실시예에 따른 가스 흐름 규제용 차단판을 개략적으로 나타낸 도면.3 is a view schematically showing a gas flow restriction blocking plate according to an embodiment of the present invention.

도 4는 본 발명의 바람직한 다른 실시예에 따른 가스 흐름 규제용 차단판을 개략적으로 나타낸 도면.Figure 4 is a schematic view showing a gas flow restriction blocking plate according to another embodiment of the present invention.

도 5는 본 발명의 바람직한 실시예에 따른 가스 흐름 규제용 차단판이 구비된 가열로를 개략적으로 나타낸 도면.5 is a schematic view of a heating furnace equipped with a gas flow restriction blocking plate according to a preferred embodiment of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

300 : 가스 흐름 규제용 차단판300: blocking plate for gas flow regulation

301 : 차단판 외주부301: outer peripheral part of the blocking plate

303 : 관통홀303: through hole

305 : 차단판 내주부 305: inner part of the blocking plate

본 발명은 가스 흐름 규제용 차단판에 관한 것이다.The present invention relates to a blocking plate for gas flow regulation.

도 1은 종래의 가열로를 개략적으로 나타낸 도면이다. 도 1을 참조하면, 종래의 가열로는 웨이퍼 보트(101), 상기 웨이퍼 보트에 구비되는 적어도 하나의 웨이퍼(103), 내부 튜브(105), 외부 튜브(107), 가스 주입부(109) 및 축받이(111)를 포함할 수 있다. 여기서, 종래에는 가스가 외부 튜브(107)와 내부 튜브(105) 사이로 주입되면 웨이퍼 보트(101)의 웨이퍼(103)에 위치되고 잔류 가스는 배출되었다. 이때, 웨이퍼 보트(101) 내의 가스 흐름은 도시된 화살표 방향과 같다.1 is a view schematically showing a conventional heating furnace. Referring to FIG. 1, a conventional heating furnace includes a wafer boat 101, at least one wafer 103 provided in the wafer boat, an inner tube 105, an outer tube 107, a gas injection unit 109, and the like. The bearing 111 may be included. Here, conventionally, when gas is injected between the outer tube 107 and the inner tube 105, it is located in the wafer 103 of the wafer boat 101 and the residual gas is discharged. At this time, the gas flow in the wafer boat 101 is the same as the arrow direction shown.

이때, 웨이퍼 보트(101) 내의 압력이 일정해야 균일한 두께의 웨이퍼를 얻을 수 있다. 그러나, 종래에는 웨이퍼 보트(101) 내의 가스 흐름이 도시된 화살표 방향과 같아 균일한 두께의 웨이퍼를 얻을 수 없는 문제점이 있었다. At this time, the pressure in the wafer boat 101 must be constant to obtain a wafer of uniform thickness. However, in the related art, there is a problem that a wafer having a uniform thickness cannot be obtained because the gas flow in the wafer boat 101 is the same as the arrow direction shown.

한편, 도 2는 종래의 가스 분사 장치를 개략적으로 나타낸 도면이다. 도 2를 참조하면, 종래의 가스 분사 장치는 가스 주입 튜브(201), 메인 진공 밸브(Main vacuum valve)(203), 버터플라이 밸브(Butterfly valve)(205), 펌프(Pump)(207) 및 스크루버(Scrubber)(209)를 포함할 수 있다. 여기서, 메인 진공 밸브(203)는 챔버 내의 진공을 조절하고 버터플라이 밸브(205)는 가스 주입 튜브 내의 압력을 조절한다.2 is a view schematically showing a conventional gas injection device. Referring to FIG. 2, a conventional gas injection apparatus includes a gas injection tube 201, a main vacuum valve 203, a butterfly valve 205, a pump 207, and a gas injection tube 201. It may include a scrubber 209. Here, the main vacuum valve 203 regulates the vacuum in the chamber and the butterfly valve 205 regulates the pressure in the gas injection tube.

그러나, 종래에 버터플라이 밸브(205)는 챔버와 격리되어 있어 챔버 내의 갑 작스런 변화에 대처할 수 없는 문제점이 있었다. 또한, 종래에 내부 튜브의 크기를 극단적으로 줄여 균일성을 향상시키는 방법이 있었으나 장비 유지에 어려움이 있고 웨이퍼 보트와 튜브 사이에 간격이 좁아 공정 진행 후 웨이퍼를 꺼낼 때 마찰이 생길 수 있는 문제점이 있었다. However, in the related art, the butterfly valve 205 is isolated from the chamber and thus cannot cope with a sudden change in the chamber. In addition, there was a conventional method of improving the uniformity by reducing the size of the inner tube extremely, but there is a problem in that it is difficult to maintain the equipment, and the gap between the wafer boat and the tube is narrow and friction may occur when taking out the wafer after the process. .

본 발명의 목적은 웨이퍼 균일성(uniformity)을 향상시키기 위해 가스 흐름 규제용 차단판을 제공하는 데 있다.
SUMMARY OF THE INVENTION An object of the present invention is to provide a gas flow restricting barrier plate for improving wafer uniformity.

상술한 목적들을 달성하기 위하여, 본 발명의 일 측면에 따르면 웨이퍼 보트의 외주부에 위치하며, 외주부가 가열로의 내측 튜브와 이격되도록 설치되는 가스 흐름 규제용 차단판을 제공할 수 있다.In order to achieve the above objects, according to an aspect of the present invention can be provided with a gas flow restriction blocking plate which is located on the outer peripheral portion of the wafer boat, the outer peripheral portion is installed so as to be spaced apart from the inner tube of the heating furnace.

바람직한 실시예에서, 상기 차단판은 고리 형태인 것을 특징으로 한다. 또한, 상기 차단판은 가스가 통과하는 관통홀을 구비하는 것을 특징으로 한다. 또한, 상기 차단판의 일면은 외주부로 갈수록 두께가 작아지는 경사면으로 형성되는 것을 특징으로 한다. In a preferred embodiment, the blocking plate is characterized in that in the form of a ring. In addition, the blocking plate is characterized by having a through hole through which gas passes. In addition, one surface of the blocking plate is characterized in that it is formed as an inclined surface becomes smaller toward the outer peripheral portion.

이어서, 첨부한 도면들을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. Next, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 3은 본 발명의 바람직한 일 실시예에 따른 가스 흐름 규제용 차단판을 개략적으로 나타낸 도면이다.3 is a view schematically showing a gas flow restricting blocking plate according to an exemplary embodiment of the present invention.

도 3을 참조하면, 본 발명의 일 실시예에 따른 가스 흐름 규제용 차단판(300)은 차단판 외주부(301)와 차단판 내주부(305)를 구비하는 고리 형태로 형성될 수 있다. 여기서, 차단판 내주부(305)와 차단판 외주부(301) 사이의 간격은 축받이와 내부 튜브 사이의 간격에 의해 결정될 수 있다. 또한, 차단판 내주부(305)의 지름은 웨이퍼 보트의 크기에 의해 결정될 수 있다. 한편, 차단판 외주부(301)와 차단판 내주부(305) 사이의 원주면에는 동일한 간격으로 복수개의 관통홀이 구비될 수 있다. 여기서, 상기 관통홀은 가스(예를 들면, N2)가 가스 흐름 규제용 차단판에 막혀 역류되거나 와류되지 않도록 한다. Referring to FIG. 3, the gas flow restricting blocking plate 300 according to an exemplary embodiment may be formed in a ring shape having a blocking plate outer circumference 301 and a blocking plate inner circumference 305. Here, the interval between the blocking plate inner peripheral portion 305 and the blocking plate outer peripheral portion 301 may be determined by the distance between the bearing and the inner tube. In addition, the diameter of the blocking plate inner peripheral portion 305 may be determined by the size of the wafer boat. On the other hand, the circumferential surface between the blocking plate outer peripheral portion 301 and the blocking plate inner peripheral portion 305 may be provided with a plurality of through holes at equal intervals. Here, the through hole prevents gas (for example, N 2 ) from being blocked by the gas flow restricting plate to prevent backflow or vortex.

도 4는 본 발명의 바람직한 다른 실시예에 따른 가스 흐름 규제용 차단판을 개략적으로 나타낸 도면이다.4 is a view schematically showing a gas flow restricting blocking plate according to another exemplary embodiment of the present invention.

도 4를 참조하면, 본 발명의 다른 실시예에 따른 가스 흐름 규제용 차단판(400)은 복수개의 관통홀(401, 403)을 구비할 수 있다. 또한, 상기 가스 흐름 규제용 차단판(400)은 일면이 외주부로 갈수록 두께가 작아지는 경사면으로 형성될 수 있다.Referring to FIG. 4, the gas flow restricting blocking plate 400 according to another embodiment may include a plurality of through holes 401 and 403. In addition, the gas flow restricting plate 400 may be formed as an inclined surface having a smaller thickness as one surface thereof goes toward the outer circumferential portion.

도 5는 본 발명의 바람직한 실시예에 따른 가스 흐름 규제용 차단판이 구비 된 가열로를 개략적으로 나타낸 도면이다.5 is a view schematically showing a heating furnace equipped with a gas flow restricting blocking plate according to an exemplary embodiment of the present invention.

도 5를 참조하면, 가스 흐름 규제용 차단판(300)은 웨이퍼 보드(101)의 외주부에 위치한다. 또한, 상기 가스 흐름 규제용 차단판(300)의 외주부는 가열로의 내측 튜브(105)와 이격되도록 설치될 수 있다. 상기 가스 흐름 규제용 차단판(300)에 의해 내측 튜브 내에 안정되게 가스를 공급할 수 있어 웨이퍼 균일성(uniformity)이 향상될 수 있다. Referring to FIG. 5, the gas flow restricting block 300 is located at an outer circumference of the wafer board 101. In addition, the outer periphery of the gas flow restricting plate 300 may be installed to be spaced apart from the inner tube 105 of the heating furnace. The gas flow regulation blocking plate 300 can stably supply the gas into the inner tube, thereby improving wafer uniformity.

본 발명은 상기 실시예에 한정되지 않으며, 많은 변형이 본 발명의 사상 내에서 당 분야에서 통상의 지식을 가진 자에 의하여 가능함은 물론이다. The present invention is not limited to the above embodiments, and many variations are possible by those skilled in the art within the spirit of the present invention.

본 발명에 따르면 웨이퍼 균일성(uniformity)을 향상시키기 위한 가스 흐름 규제용 차단판을 제공할 수 있다.
According to the present invention, it is possible to provide a gas flow restricting blocking plate for improving wafer uniformity.

Claims (4)

웨이퍼 보트의 외주부에 위치하며,Located on the outer periphery of the wafer boat 외주부가 가열로의 내측 튜브와 이격되도록 설치되는The outer peripheral portion is installed to be spaced apart from the inner tube of the heating furnace 가스 흐름 규제용 차단판.Blocks for gas flow regulation. 제1항에 있어서,The method of claim 1, 상기 차단판은 고리 형태인 것을 특징으로 하는 가스 흐름 규제용 차단판.The blocking plate is a gas flow restriction blocking plate, characterized in that the ring shape. 제1항에 있어서,The method of claim 1, 상기 차단판은 가스가 통과하는 관통홀을 구비하는 것을 특징으로 하는 가스 흐름 규제용 차단판.The blocking plate is a gas flow restriction blocking plate, characterized in that it has a through hole through which gas passes. 제1항에 있어서,The method of claim 1, 상기 차단판의 일면은 외주부로 갈수록 두께가 작아지는 경사면으로 형성되는 것을 특징으로 하는 가스 흐름 규제용 차단판. One side of the blocking plate is gas flow restriction blocking plate, characterized in that formed in the inclined surface becomes smaller toward the outer peripheral portion.
KR1020040114404A 2004-12-28 2004-12-28 A board for interrupting gas flow KR20060075596A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101523357B1 (en) * 2008-09-16 2015-05-28 삼성전자주식회사 Apparatus and method for forming semiconductor devices
US10665483B2 (en) 2015-10-05 2020-05-26 Samsung Electronics Co., Ltd. Apparatus for treating a substrate
CN113517192A (en) * 2021-07-14 2021-10-19 长江存储科技有限责任公司 Wafer processing method and method of manufacturing semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101523357B1 (en) * 2008-09-16 2015-05-28 삼성전자주식회사 Apparatus and method for forming semiconductor devices
US10665483B2 (en) 2015-10-05 2020-05-26 Samsung Electronics Co., Ltd. Apparatus for treating a substrate
CN113517192A (en) * 2021-07-14 2021-10-19 长江存储科技有限责任公司 Wafer processing method and method of manufacturing semiconductor device
CN113517192B (en) * 2021-07-14 2023-10-20 长江存储科技有限责任公司 Wafer processing method and method for manufacturing semiconductor device

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