KR100820190B1 - Spin chuck - Google Patents

Spin chuck Download PDF

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Publication number
KR100820190B1
KR100820190B1 KR1020060114881A KR20060114881A KR100820190B1 KR 100820190 B1 KR100820190 B1 KR 100820190B1 KR 1020060114881 A KR1020060114881 A KR 1020060114881A KR 20060114881 A KR20060114881 A KR 20060114881A KR 100820190 B1 KR100820190 B1 KR 100820190B1
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KR
South Korea
Prior art keywords
spin chuck
spin
disk
wafer
curved guide
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KR1020060114881A
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Korean (ko)
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문성길
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(주)이노맥스
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Priority to KR1020060114881A priority Critical patent/KR100820190B1/en
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Publication of KR100820190B1 publication Critical patent/KR100820190B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)

Abstract

A spin chuck apparatus is provided to improve uniformity of a subatmospheric pressure operation being formed on a lower of a wafer and to maintain a normal position of the wafer being floated by using a plurality of inclined through holes formed radially on a spin disk. A disk installation protrusion is prepared on the center of an upper of a spin chuck body(10). A spin disk(30) is installed on the center of the spin chuck body. A curved guide part(14) is formed toward the outside of the disk installation protrusion. A plurality of guide protrusions are prepared on an outer circumference of the curved guide part. A plurality of inclined injection tubes(22) are radially between an inner center of the disk installation protrusion and the curved guide part. The inclined injection tubes discharge gas being provided into a spin chuck apparatus to the outside via a division space, an injection channel, the curved guide part, and a lower gap of a wafer. The spin disk is provided with a plurality of inclined through tubes radially.

Description

스핀 척 장치{Spin Chuck}Spin Chuck

도 1은 종래의 스핀척을 보여주는 일부 생략 요부 종단면도,1 is a partially omitted longitudinal cross-sectional view showing a conventional spin chuck,

도 2는 본 발명의 바람직한 일례를 나타내는 것으로서 일부를 생략하여 도시한 평면도,2 is a plan view showing a preferred example of the present invention with a part omitted;

도 3은 도 2의 종단면도,3 is a longitudinal cross-sectional view of FIG.

도 4는 도 3의 요부 확대도.4 is an enlarged view illustrating main parts of FIG. 3;

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

10: 스핀척본체, 12: 디스크돌기,10: spin chuck body, 12: disk projection,

14: 만곡가이드요부, 16: 가이드돌기,14: curved guide, 16: guide protrusion,

18: 설치홈, 20: 분배공간,18: installation groove, 20: distribution space,

22: 분사로, 24: 중심축설치공간,22: spraying furnace, 24: central axis installation space,

30: 스핀디스크, 32: 돌출부,30: spin disk, 32: protrusion,

34: 경사통공34: inclined through hole

본 발명은 웨이퍼의 용액 처리시에 사용되는 스핀척(Spin Chuck) 장치에 관 한 것으로, 특히 용액 처리시 웨이퍼를 스핀척의 상부로서 비접촉식의 부유상태로 정위치시키고 작동시 웨이퍼가 스핀척과 함께 회전작동이 이루어지도록 하는 웨이퍼용 스핀척 장치에 관한 것이다.The present invention relates to a spin chuck device used in the solution processing of wafers, in particular, during solution processing, the wafer is placed in a non-contact floating state as the top of the spin chuck and the wafer is rotated together with the spin chuck during operation. This invention relates to a spin chuck device for wafers.

일반적으로 웨이퍼의 에칭공정 등에 있어서는 미국특허 제4,903,717호 및 도 1에 게재되어 있는 바와 같이, 질소와 같은 가스를 방사상으로 분사시켜 베르누이의 원리에 의한 부압효과에 의하여 스핀척(1)의 상부로서 비접촉식의 부유상태로 웨이퍼(2)를 스핀척(1)에 장착한 상태에서 용액(3)이 처리될 웨이퍼(2)의 표면 상부로 도포되고 중심축(4)에 의하여 회전되는 스핀척(1)과 함께 웨이퍼(2)의 회전운동이 이루어짐에 따라 용액(3)이 웨이퍼(2)의 표면을 골고루 도포한 후 웨이퍼(2)의 에지 너머로 비산되어 별도의 수단에 의하여 모았다가 배출될 수 있게 그 구성이 이루어져 있다.In general, in the etching process of the wafer, as disclosed in U.S. Patent No. 4,903,717 and FIG. 1, a non-contact type is formed as the upper part of the spin chuck 1 by the negative pressure effect according to Bernoulli's principle by radially injecting a gas such as nitrogen. In the state where the wafer 2 is mounted on the spin chuck 1 in a suspended state, the spin chuck 1 is applied onto the surface of the wafer 2 to be processed and rotated by the central axis 4. With the rotational movement of the wafer 2, the solution 3 is evenly applied on the surface of the wafer 2 and then scattered over the edge of the wafer 2 so that it can be collected and discharged by a separate means. The composition is made up.

이러한 종래의 스핀척(1)의 경우에는 중심축(4)의 내부유로와 연통되는 가스의 배출구(5)와 연장되는 노즐부(6)가 웨이퍼(2)의 에지부와 인접한 외곽 방향으로 형성되어 중심으로부터 멀리 떨어진 위치에 형성되어 있는 관계로, 웨이퍼(2)를 스핀척(1)의 상부에 중심을 서로 맞추어 올려놓게 되면 노즐부(6)로부터 분사되는 가스는 웨이퍼(2)의 외곽 하부와의 사이 간극을 거쳐 웨이퍼(2) 외측 방향으로 분사 이동하고 이에 따라 베르누이의 원리에 의하여 웨이퍼(2)와 스핀척(1)의 사이로서 웨이퍼(2)의 중심 하부로부터 가스 배출구(5)의 내측에 이르는 간극공간에는 부압이 작용하게 되어 스핀척(1)의 상부로서 일정 간극이 형성된 상부위치에 웨이퍼(2)가 정위치에 고정하게 되는 작동이 이루어지게 된다.In the case of the conventional spin chuck 1, the nozzle portion 6 extending from the outlet 5 of the gas communicating with the internal flow path of the central axis 4 is formed in the outer direction adjacent to the edge portion of the wafer 2. The wafer 2 is centered on the top of the spin chuck 1 so that the gas injected from the nozzle unit 6 is lower than the outer edge of the wafer 2. The jet is moved outwardly through the gap between the wafer 2 and accordingly Bernoulli's principle is that between the wafer 2 and the spin chuck 1 from the lower center of the wafer 2, The negative pressure acts on the gap space reaching the inner side, so that the wafer 2 is fixed at the upper position where the gap is formed as the upper portion of the spin chuck 1.

그러나, 이러한 종래의 스핀척(1)은 노즐부(6)를 경유하여 외부로 배출되는 가스의 배출로를 확보하기 위하여 스핀척(1)의 상부에 요부를 형성하거나 아니면 적절하게 수평으로 받쳐줄 수 있는 별도의 받침을 갖추고 있지 아니한 상태로 이루어지게 되므로 내부의 부압분포도 고르지 않게 되는 현상이 발생하게 된다.However, such a conventional spin chuck 1 may form a recess on the top of the spin chuck 1 or support it horizontally appropriately to secure a discharge path of gas discharged to the outside via the nozzle part 6. Since it is made in a state that does not have a separate support, there is a phenomenon that the internal negative pressure distribution is also uneven.

이에 따라 특히 얇은 웨이퍼(2)를 용액 처리하는 경우에는 내부 부압의 불균일한 분포에 의하여 중심부가 처리가 이루어지는 동안 중심부위로 갈수록 계속적으로 내향으로 휘어진 상태를 유지하게 되어 영구변형이나 부분적인 손상이 자주 발생하게 되어 웨이퍼(2)의 품질을 저하시키는 요인이 되고 있다.Accordingly, especially in the case of solution processing the thin wafer 2, due to the non-uniform distribution of the internal negative pressure, the inner portion continues to be bent inward toward the center portion during the processing, so that permanent deformation or partial damage frequently occurs. This is a factor of lowering the quality of the wafer 2.

본 발명의 목적은 용액에 의한 코팅처리시에 웨이퍼가 스핀척의 상부에서 떠 있게 되는 부상(浮上) 상태로 정위치 상태를 보다 확실하게 유지시킬 수 있고 작동시에 웨이퍼가 스핀척으로부터 미끄러지지 아니하고 함께 회전작동이 잘 이루어질 수 있도록 하고자 함에 있다.It is an object of the present invention to more reliably maintain the in-situ state in a floating state in which the wafer floats on top of the spin chuck during coating with a solution and rotate the wafer together without slipping from the spin chuck during operation. The purpose is to make things work.

본 발명은 위와 같은 목적을 달성하기 위하여 중심에 유로가 형성되고 제자리에서 회전 구동되는 중심축의 상부에 스핀척본체를 수평으로 설치하여 이루어지는 통상의 스핀척 장치에 있어서, 스핀척본체의 상부 중심엔 디스크설치돌기를 마련하여 그 중심에 스핀디스크를 설치하고, 상기 디스크설치돌기의 외측으로는 만곡가이드요부를 형성하고 상기 만곡가이드요부의 외곽 위치엔 다수의 가이드돌기를 설치하여 이루어지되, 상기 디스크설치돌기의 내측엔 중심의 분배공간을 중심으로 상기 만곡가이드요부와의 사이에 방사상으로 경사진 다수의 분사로를 형성하여 내부로 공급되는 가스가 분배공간 및 분사로와 만곡가이드요부를 거쳐 웨이퍼의 하부 간극을 경유 외부로 배출될 수 있게 구성되는 스핀척장치를 제공한다.In the present invention, in order to achieve the above object, in the conventional spin chuck device formed by horizontally installing the spin chuck main body on the upper portion of the central axis is formed in the flow path in the center and rotationally driven in place, the disk at the upper center of the spin chuck main body It is made by installing a spin disk in the center of the installation projection, forming a curved guide recess on the outside of the disk mounting projection and installing a plurality of guide projections at the outer position of the curved guide recess, Inside the center, a plurality of radially inclined injection paths are formed between the curved guide recesses and the center of the distribution space so that the gas supplied therein passes through the distribution spaces and the spray passages and the curved guide recesses to form a lower gap of the wafer. It provides a spin chuck device configured to be discharged to the outside via diesel.

또한, 상기 스핀디스크는 외곽과 인접된 위치에 방사상으로 다수의 경사통공을 형성하여 상기 만곡가이드요부를 가스가 통과하면서 웨이퍼의 저부에 작용하게 되는 부압이 스핀디스크와 웨이퍼의 사이에 위치한 기체가 이들 경사통공을 경유하면서 고르게 작용하도록 하는 스핀척장치를 제공한다.In addition, the spin disk has a plurality of inclined through holes radially adjacent to the outer periphery so that the gas is located between the spin disk and the wafer under negative pressure to act on the bottom of the wafer while the gas passes through the curved guide portion Provided is a spin chuck device that acts evenly through the inclined through hole.

이하, 첨부된 도면에 의하여 보다 상세하게 살펴보기로 한다.Hereinafter, with reference to the accompanying drawings will be described in more detail.

본 발명은 위와 같은 목적을 달성하기 위하여 중심에 유로가 형성되고 제자리에서 회전 구동되는 중심축의 상부에 스핀척본체(10)를 수평으로 설치하여 이루어지는 통상의 스핀척 장치에 있어서, 스핀척본체(10)의 상부 중심엔 디스크설치돌기(12)를 마련하여 그 중심에 스핀디스크(30)를 설치하고, 상기 디스크설치돌기(12)의 외측으로는 만곡가이드요부(14)를 형성하고 상기 만곡가이드요부(14)의 외곽 위치엔 다수의 가이드돌기(16)를 설치하여 이루어지게 된다.In the present invention, in order to achieve the above object, in the conventional spin chuck device formed by horizontally installing the spin chuck main body 10 on the upper portion of the central axis that is formed in the center and rotationally driven in place, the spin chuck main body 10 In the upper center of the disk is provided with a disk mounting projections 12 to install a spin disk 30 in the center, the curved guide recess 14 is formed on the outside of the disk mounting projections 12 and the curved guide recess In the outer position of the (14) is made by installing a plurality of guide projections (16).

이때, 상기 디스크돌기(12)의 중심에는 설치홈(18)을 형성하고 상기 스핀디스크(30)의 하부 중심엔 결합용 돌출부(32)를 마련하여 상기 돌출부(32)를 상기 설치홈(18)에 결합하여 상기 스핀척본체(10)에 상기 스핀디스크(30)를 결합 설치할 수 있게 구성한다.In this case, an installation groove 18 is formed in the center of the disk protrusion 12 and a coupling protrusion 32 is provided at the lower center of the spin disk 30 to provide the protrusion 32 with the installation groove 18. Is coupled to the spin chuck body 10 is configured to be coupled to the spin disk 30 to be installed.

또한, 상기 디스크설치돌기(12)의 내측엔 중심의 분배공간(20)을 중심으로 상기 만곡가이드요부(14)와의 사이에 방사상으로 경사진 다수의 분사로(22)를 형성 하여 내부로 공급되는 가스가 분배공간(20) 및 분사로(22)와 만곡가이드요부(14)를 거쳐 웨이퍼(2)의 하부 간극을 경유 외부로 배출될 수 있게 구성된다.In addition, a plurality of radially inclined injection paths 22 are formed between the curved guide recesses 14 and the inner side of the disc installation protrusion 12 to be supplied to the inside. The gas is configured to be discharged to the outside via the distribution space 20, the injection passage 22 and the curved guide recess 14 through the lower gap of the wafer (2).

또한, 상기 스핀디스크(30)는 외곽과 인접된 위치에 방사상으로 다수의 경사통공(34)을 형성하여 상기 만곡가이드요부(14)를 가스가 통과하면서 웨이퍼(2)의 저부에 작용하게 되는 부압이 스핀디스크(30)와 웨이퍼(2)의 사이에 위치한 기체가 이들 경사통공(34)을 경유하면서 고르게 작용이 이루어지도록 구성함이 바람직하다.In addition, the spin disk 30 forms a plurality of inclined through holes 34 radially at a position adjacent to the outer side so that a negative pressure acts on the bottom of the wafer 2 while gas passes through the curved guide recess 14. It is preferable that the gas located between the spin disk 30 and the wafer 2 be configured to work evenly via these inclined through holes 34.

미설명부호로서 24는 중심축을 설치하기 위한 공간을 나타낸다.As the reference numeral 24 denotes a space for installing the central axis.

다음은 전술한 바와 같이 이루어지는 본 발명에 대하여 작용이 이루어지는 사항을 살펴보기로 한다.Next, a description will be made of matters to be made with respect to the present invention made as described above.

도 2 내지 도 4에 예시한 바와 같이 본 발명인 스핀 척 장치를 사용하게 되면 스핀척본체(10)의 상부로서 중심의 설치홈(18)에 스핀디스크(30)의 돌출부(32)를 상부로부터 끼워 결합하여 스핀척본체(10)와 스핀디스크(30)의 결합이 이루어진 상태에서 미도시된 중심축의 상부에 스핀척본체(10)를 결합하여 작동을 준비시킨다.When the spin chuck device of the present invention is used as illustrated in FIGS. 2 to 4, the protrusion 32 of the spin disk 30 is inserted into the center installation groove 18 as the upper part of the spin chuck body 10 from the upper part. In combination with the spin chuck main body 10 and the spin disk 30 is coupled to prepare the operation by coupling the spin chuck main body 10 to the upper portion of the central axis not shown.

스핀척본체(10)와 스핀디스크(30)의 상부에 웨이퍼(2)를 가이드돌기(16)의 내측으로 로딩시켜 정위치한 상태에서 작동을 시키게 되면 내부의 가스는 분배공간(20)으로부터 다수의 분사로(22)를 경유하여 만곡가이드요부(14)로 분사되고 스핀디스크(30) 저부와의 사이 간극을 거쳐 웨이퍼(2)의 저부를 경유하여 외부로 배출되게 된다.When the wafer 2 is loaded inside the guide protrusion 16 on the spin chuck body 10 and the spin disk 30 and operated in a fixed position, the gas inside the plurality of gas is distributed from the distribution space 20. It is injected to the curved guide recess 14 via the injection path 22 and is discharged to the outside via the bottom of the wafer 2 via a gap between the bottom of the spin disk 30.

이와 같은 가스의 배출이 연속적으로 이루어지게 되면, 만곡가이드요부(14)와 웨이퍼(2)의 사이 간극을 경유하여 외부로 배출되는 작동이 연속적으로 이루어지면서 그 압력이 상승하는 반면에 웨이퍼(2)와 스핀디스크(30)의 사이에는 압력이 낮아지게 되어 웨이퍼(2)의 저부 내,외측에 있어서 압력차가 존재하는 현상인 베르누이의 원리에 의하여 웨이퍼(2)는 스핀척본체(10) 및 스핀디스크(30)의 상부로서 가이드돌기(16)의 내측에서 정위치한 상태로 고정위치로 자리를 유지하게 된다.When the gas is discharged continuously, the pressure is increased while the operation is continuously discharged to the outside via the gap between the curved guide recess 14 and the wafer 2 while the pressure is increased. By the Bernoulli principle, which is a phenomenon in which a pressure difference is lowered between the spin disk 30 and the spin disk 30, and a pressure difference exists inside and outside the bottom of the wafer 2, the wafer 2 has a spin chuck body 10 and a spin disk. As the upper portion of the 30, the position is maintained in the fixed position in a fixed position inside the guide protrusion 16.

이때, 웨이퍼(2)의 중심으로 갈수록 내부의 부압에 의하여 하향으로 쳐지려고 하더라도 스핀디스크(30)가 이를 받쳐주어 쳐지는 현상을 사전에 방지할 수 있고 미도시된 중심축이 회전하게 되면 스핀척본체(10)도 제자리에서 회전하게 되면서 웨이퍼(2)도 함께 제자리에서 상기 스핀척본체(10) 및 스핀디스크(30)와 함께 회전작동이 이루어지게 된다.At this time, even if it is going to be struck downward by the internal negative pressure toward the center of the wafer 2, the spin disc 30 can prevent it from hitting it in advance, and if the central axis not shown rotates, the spin chuck is rotated. As the main body 10 also rotates in place, the wafer 2 also rotates together with the spin chuck body 10 and the spin disk 30 in place.

특히, 스핀디스크(30)에 다수의 경사통공(34)이 방사상으로 형성되어 있어 스핀디스크(30)의 상부로서 웨이퍼(2)의 저부에 형성되는 부압작동이 골고루 균일하게 이루어지게 되어 웨이퍼(2)가 확실하게 정위치 상태를 유지할 수 있게 된다.In particular, a plurality of inclined through holes 34 are radially formed in the spin disk 30 so that the negative pressure operation formed at the bottom of the wafer 2 as the upper portion of the spin disk 30 is uniformly performed. ) Can be surely held in position.

이상 살펴본 바와 같이, 본 발명에 의하면 용액에 의한 코팅처리시에 웨이퍼(2)가 스핀척본체(10)의 상부에서 떠 있게 되는 부상(浮上) 상태로 정위치 상태를 보다 확실하게 유지할 수 있고 회전작동시에도 웨이퍼(2)가 스핀척본체(10) 및 스핀디스크(30)로부터 미끄러지지 아니하고 함께 회전작동이 잘 이루어질 수 있게 되는 등의 우수한 효과를 갖게 된다.As described above, according to the present invention, it is possible to more reliably maintain the in-situ state in the floating state in which the wafer 2 floats on the upper portion of the spin chuck body 10 during the coating treatment with the solution. Even during the pre-operation, the wafer 2 does not slide from the spin chuck main body 10 and the spin disk 30, and the rotation operation can be performed well together.

Claims (2)

중심에 유로가 형성되고 제자리에서 회전 구동되는 중심축의 상부에 스핀척본체를 수평으로 설치하여 이루어지는 통상의 스핀척 장치에 있어서,In a conventional spin chuck device formed by horizontally installing the spin chuck main body on the upper portion of the central axis which is formed in the center and the rotational drive in place 상기 스핀척본체의 상부 중심엔 디스크설치돌기를 마련하여 그 중심에 스핀디스크를 설치하고, 상기 디스크설치돌기의 외측으로는 만곡가이드요부를 형성하고 상기 만곡가이드요부의 외곽 위치엔 다수의 가이드돌기를 설치하여 이루어지되,The upper center of the spin chuck main body is provided with a disk mounting projection to install a spin disk in the center, the outer side of the disk mounting projection to form a curved guide recess and a plurality of guide projections in the outer position of the curved guide recess By installation, 상기 디스크설치돌기의 내측엔 중심의 분배공간을 중심으로 상기 만곡가이드요부와의 사이에 방사상으로 경사진 다수의 분사로를 형성하여 내부로 공급되는 가스가 분배공간 및 분사로와 만곡가이드요부를 거쳐 웨이퍼의 하부 간극을 경유 외부로 배출될 수 있게 구성되는 것을 특징으로 하는 스핀 척 장치.Inside the disc mounting protrusion, a plurality of radially inclined injection paths are formed between the curved guide recesses and a center of the distribution space, so that the gas supplied to the inside is passed through the distribution spaces and the spray passages and the curved guide recesses. Spin chuck device, characterized in that configured to be discharged to the outside via the lower gap of the wafer. 제1항에 있어서,The method of claim 1, 상기 스핀디스크는 외곽과 인접된 위치에 방사상으로 다수의 경사통공을 형성하여 이루어지는 것을 특징으로 하는 스핀 척 장치.The spin disk is a spin chuck device, characterized in that formed by forming a plurality of radial through holes in a position adjacent to the outside.
KR1020060114881A 2006-11-21 2006-11-21 Spin chuck KR100820190B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101653243B1 (en) 2015-05-11 2016-09-02 (주)이노맥스 Spin chuck
KR20230079551A (en) 2021-11-29 2023-06-07 주식회사 건테크 Spin chuck pin mounted on cleaning equipment of wet pin chuck stage made of low-resistance SiC material

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Publication number Priority date Publication date Assignee Title
JPH0338978A (en) * 1989-07-06 1991-02-20 Canon Inc Image pickup device
JPH0513276A (en) * 1991-07-04 1993-01-22 Matsushita Electric Ind Co Ltd Electrolyte for driving electrolytic capacitor
JP2008006000A (en) * 2006-06-28 2008-01-17 Fujinon Corp Endoscope apparatus

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Publication number Priority date Publication date Assignee Title
JPH0338978A (en) * 1989-07-06 1991-02-20 Canon Inc Image pickup device
JPH0513276A (en) * 1991-07-04 1993-01-22 Matsushita Electric Ind Co Ltd Electrolyte for driving electrolytic capacitor
JP2008006000A (en) * 2006-06-28 2008-01-17 Fujinon Corp Endoscope apparatus

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101653243B1 (en) 2015-05-11 2016-09-02 (주)이노맥스 Spin chuck
KR20230079551A (en) 2021-11-29 2023-06-07 주식회사 건테크 Spin chuck pin mounted on cleaning equipment of wet pin chuck stage made of low-resistance SiC material

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