JP2005101055A - Device for treating substrate by processing liquid - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a treating device capable of reliably etching the periphery of a semiconductor wafer. <P>SOLUTION: The treating device for treating the periphery of the semiconductor wafer by a processing liquid comprises a first driving means 1 for nearly horizontally retaining the semiconductor wafer for rotating and driving circumferentially; a rotating disk 11 that is formed so that the diameter of the rotating disk is slightly smaller than that of a semiconductor wafer, allows the rotation center to coincide with that of the semiconductor wafer, and alienates from the upper surface of the substrate at a specified interval, and is provided opposingly; a drive mechanism 12 for rotating and driving the rotating disk; and an upper nozzle body 13 that supplies a treatment liquid to the upper surface of the rotating disk that is rotated and driven for flowing from the periphery of the rotating disk to that of the semiconductor wafer. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a processing apparatus for processing a peripheral portion of a substrate with a processing liquid.

  For example, when a circuit pattern is formed on a semiconductor wafer as a substrate, there is a step of forming a laminated film composed of a plurality of thin films such as a conductive film and an insulating film on the semiconductor wafer. Film formation on the semiconductor wafer is performed by, for example, a CVD apparatus. When a laminated film is formed on a semiconductor wafer, the laminated film may also be formed on the periphery of the semiconductor wafer.

  The semiconductor wafer on which the laminated film is formed is cleaned by a spin processing apparatus or the like. In that case, if the peripheral portion of the semiconductor wafer is held by the chuck of the spin processing apparatus, the laminated film on the peripheral portion may be peeled off, and the peeled laminated film adheres to the semiconductor wafer or other semiconductor wafers, causing contamination. Cause.

  Therefore, conventionally, if a laminated film is formed on a semiconductor wafer, the peripheral film is etched with an etching solution as a processing liquid over a range of 1 to 3 mm from the outer peripheral edge to the inner edge, and the laminated film formed on the peripheral edge. Is being done. As a method for etching the peripheral portion of the semiconductor wafer, an etching solution is sprayed onto the peripheral portion of the semiconductor wafer by a nozzle.

  According to the method of performing etching by spraying the etching liquid onto the peripheral edge of the semiconductor wafer with a nozzle, the etching liquid sprayed on the peripheral edge is scattered on the device surface of the semiconductor wafer, and unnecessary etching is performed on the device surface. There is a fear.

  In addition, when the etching liquid is sprayed onto the peripheral edge of the semiconductor wafer by the nozzle, the peripheral edge of the semiconductor wafer is held by the chuck of the spin processing apparatus, and this semiconductor wafer is rotated. However, when etching is performed while holding and rotating the peripheral portion of the semiconductor wafer with the chuck of the spin processing apparatus, the holding portion by the chuck may not be reliably etched.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus that can reliably process the peripheral portion of a substrate with a processing liquid and that does not perform unnecessary processing on a device surface.

The present invention provides a processing apparatus for processing a peripheral portion of a substrate with a processing liquid.
First driving means for holding the substrate substantially horizontally and rotationally driving it in the circumferential direction;
A turntable that is formed to be slightly smaller in diameter than the substrate and substantially coincides with the center of rotation of the substrate and that is opposed to the upper surface of the substrate at a predetermined interval;
A second driving means for rotationally driving the rotating disk;
And an upper processing liquid supply means for supplying a processing liquid to the upper surface of the rotating disk that is driven to rotate and flowing the processing liquid from a peripheral part of the rotating disk to a peripheral part of the substrate. In the processing device.

  It is preferable that a gas supply pipe for supplying an inert gas is connected to the center of the rotating disk between the rotating disk and the substrate.

  It is preferable that a lower processing liquid supply means for supplying the processing liquid is provided on almost the entire lower surface of the substrate that is rotationally driven.

The present invention provides a processing apparatus for processing a peripheral portion of a substrate with a processing liquid.
A rotationally driven table;
A chuck pin that is provided on the table and holds the peripheral edge of the substrate, and a support pin that supports the lower surface of the substrate when the holding of the substrate by the chuck pin is released;
A nozzle body that has a nozzle hole formed on the outer peripheral surface and that is disposed above the center of the rotary table and sprays the processing liquid from the nozzle hole at a distance corresponding to the centrifugal force generated by being driven to rotate The substrate processing apparatus is characterized by the following.

  A treatment liquid and pure water can be selectively supplied to the nozzle body. Pure water is first ejected from the nozzle holes of the nozzle body, and the pure water is ejected to the peripheral edge of the substrate. After setting the number of rotations of the nozzle body to the number of rotations, it is preferable to eject the treatment liquid from the nozzle holes.

  It is preferable that an ejection range regulating member is provided below the nozzle body to restrict the treatment liquid ejected from the nozzle hole of the nozzle body from being ejected to a location other than the peripheral edge of the substrate.

The present invention provides a processing apparatus for processing a peripheral portion of a substrate with a processing liquid.
A treatment tank having a ring-shaped liquid passage of a predetermined diameter;
Treatment liquid supply means for supplying the treatment liquid to the liquid passage so as to flow in a predetermined direction;
And a holding means for holding the non-device surface with the device surface facing down and the non-device surface facing up so that the peripheral portion contacts the processing liquid flowing in the liquid path in a predetermined direction. In the processing device.

  It is preferable to provide a gas supply means for supplying an inert gas to the device surface and preventing the processing liquid from entering the device surface.

  The treatment tank is provided with a drainage portion for discharging the treatment liquid supplied to the liquid passage at substantially the same height as the upper surface of the substrate whose peripheral portion is in contact with the treatment liquid in the liquid passage. Is preferred.

The present invention provides a processing apparatus for processing a peripheral portion of a substrate with a processing liquid.
A processing body having a cylindrical shape with an upper end surface and a lower end surface opened, and a peripheral portion of the substrate inserted into the inner peripheral surface to form a spiral groove;
Treatment liquid supply means for supplying a treatment liquid to the spiral groove;
Holding means for holding the plate surface of the substrate;
There is provided a substrate processing apparatus comprising: a driving unit that rotationally drives the holding unit or the processing body to move the substrate held by the holding unit relatively along the spiral groove.

  In the treatment body, the lower portion is preferably a treatment region where the treatment liquid is supplied to the spiral groove, and the upper portion is preferably a rinse region where the rinse liquid is supplied to the spiral groove.

  It is preferable that at least the inner peripheral portion where the spiral groove is formed of the treatment body is formed of a material that allows liquid to penetrate.

  According to the present invention, since the processing liquid can be supplied only to the peripheral portion of the substrate, it is possible to reliably process only the peripheral portion without performing unnecessary processing on the device surface.

  Embodiments of the present invention will be described below with reference to the drawings.

(First embodiment)
1 to 3 show a processing apparatus according to a first embodiment of the present invention. This processing apparatus includes a first driving means 1. The first driving means 1 has a plurality of, in this embodiment, four rollers 3 having holding grooves 2 formed on the outer peripheral surface. Each roller 3 is fixedly attached to an upper end portion of an attachment shaft 4 whose axis is vertical.

  Each mounting shaft 4 is rotatably supported by a bearing 7 provided on a base body 6 having a rectangular planar shape. Two of the four bearings 7 are connected to and separated from the remaining two bearings 7, that is, the pair of bearings 7 provided so as to be movable in a direction indicated by an arrow A in FIG. It is connected by a plate 8a and is driven by a cylinder 8 through this connecting plate 8a. At least one of the four mounting shafts 4, in this embodiment, one mounting shaft 4 provided on two bearings 7 fixed to the base 6 is rotationally driven by a drive source 9. Yes.

  The peripheral edge portion of the semiconductor wafer W as a substrate is engaged and held in the holding grooves 2 of the four rollers 3. That is, the semiconductor wafer W is placed between the four rollers 2 by a robot (not shown) in a state where the two rollers 3 are driven by the cylinder 8 to the retracted position in a direction away from the other two rollers 3. Supplied up.

  Next, the two rollers 3 are driven by the cylinder 8 in a direction approaching the other two rollers 2, so that the semiconductor wafer W is held substantially horizontally by the holding grooves 2 of the four rollers 3. In this state, if one roller is rotationally driven by the drive source 9, the semiconductor wafer W can be rotated in the circumferential direction.

  On the upper surface side of the semiconductor wafer W held by the four rollers 2, a rotating disk 11 having a diameter slightly smaller than the semiconductor wafer W, for example, about 2 to 6 mm, is formed with the center of the semiconductor wafer W as the center. Are arranged so as to substantially coincide with each other. A hollow drive shaft 10 that also serves as a gas supply pipe is provided on the upper surface of the central portion of the rotating disk 11. The drive shaft 10 is connected to a drive mechanism 12 constituting second drive means. Although not shown in detail, the drive mechanism 12 has a rotary drive source and a vertical drive source, and rotates the rotary plate 11 at a predetermined rotational speed via the drive shaft 10. An interval between the semiconductor wafer W and the semiconductor wafer W can be set.

  An inert gas such as nitrogen gas is supplied between the opposed surfaces of the rotating disk 11 and the semiconductor wafer W through the drive shaft 10. The inert gas supplied to the central part between the opposed surfaces flows outward in the radial direction and flows out from the peripheral part.

  An etching liquid as a processing liquid is supplied to the upper surface of the rotating disk 11 by an upper nozzle body 13 as an upper processing liquid supply means. The etching solution supplied to the upper surface of the turntable 11 flows from the tapered portion 11a formed in the peripheral portion thereof to the device surface on the upper surface of the semiconductor wafer W when the turntable 11 is rotationally driven. That is, the etching solution flows to the peripheral portion of the device surface of the semiconductor wafer W exposed from the peripheral portion of the turntable 11. Since the turntable 11 is driven to rotate, the etching liquid flows out almost uniformly from the entire circumferential direction of the turntable 11 to the peripheral portion of the device surface of the semiconductor wafer W.

  Below the semiconductor wafer W held by the roller 3, a lower nozzle body 14 is provided as lower processing liquid supply means for supplying an etching liquid to the lower surface of the semiconductor wafer W, that is, the entire non-device surface.

  According to the processing apparatus having the above configuration, if the peripheral portion of the semiconductor wafer W with the device surface facing upward is held by the roller 3, the turntable 11 is placed on the upper surface of the semiconductor wafer W at a predetermined interval, for example, an interval of about 3 mm. Close and face each other.

  Next, one roller 3 is rotationally driven by the drive source 9 to rotate the semiconductor wafer W in the circumferential direction, and the rotating disk 11 is rotated in the same direction as or in the opposite direction to the semiconductor wafer W. An etching solution is supplied from the upper nozzle body 13 to the upper surface.

  The etching solution supplied to the upper surface of the turntable 11 flows radially outward by centrifugal force generated by the rotation of the turntable 11 as shown by an arrow B in FIG. Fall into. The turntable 11 is formed with a slightly smaller diameter than the semiconductor wafer W. Therefore, the etching solution falls from the peripheral portion of the turntable 11 to the peripheral portion of the device surface of the semiconductor wafer W and flows along the outer peripheral surface from there, so that the peripheral portion and outer peripheral surface of the device surface of the semiconductor wafer W are etched. Will be.

  An etching solution is supplied to the upper surface of the turntable 1 and at the same time, an inert gas such as nitrogen gas is supplied between the opposed surfaces of the turntable 11 and the semiconductor wafer W through the drive shaft 10. As shown by an arrow C in FIG. 3, the inert gas flows outward from the radial center through the gap G between the facing surfaces of the turntable 11 and the semiconductor wafer W. Therefore, the etching solution that has flowed from the peripheral portion of the turntable 11 to the peripheral portion of the device surface of the semiconductor wafer W is prevented from entering the inside of the semiconductor wafer W in the radial direction by the flow of the inert gas. It is possible to prevent the peripheral portion of the device surface of W from being etched more than necessary.

  When the turntable 11 is driven to rotate, the etching solution supplied to the upper surface of the turntable 11 flows almost uniformly from the entire circumferential direction to the peripheral portion of the semiconductor wafer W. Therefore, the etching of the semiconductor wafer W with the etching solution can be performed uniformly over the entire circumferential direction.

  The semiconductor wafer W held by the roller 3 is rotationally driven in the circumferential direction. Therefore, the holding position of the peripheral edge of the semiconductor wafer W by the roller 3 always changes and does not become constant, so that the peripheral edge of the semiconductor wafer W can be uniformly etched in the circumferential direction.

  When the etching liquid is supplied from the upper nozzle body 13 to the upper surface of the turntable 1 and at the same time the etching liquid is sprayed from the lower nozzle body 14 to the entire non-device surface of the lower surface of the semiconductor wafer W, the semiconductor wafer W is not non-coated along with the peripheral edge. The device surface can be etched simultaneously.

(Second Embodiment)
4 to 6 show a spin processing apparatus as a processing apparatus according to the second embodiment of the present invention. The spin processing apparatus includes a cup body 21. FIG. A plurality of discharge pipes 22 are connected to the bottom of the cup body 21 at predetermined intervals in the circumferential direction. Each discharge pipe 22 communicates with an exhaust pump (not shown).
The cup body 21 has a lower cup 21a and an upper cup 21b, and the upper cup 21b can be driven in the vertical direction by a driving mechanism such as a cylinder (not shown).

  A rotating table 23 as a holding portion is provided in the cup body 21. A plurality of support members 24 are rotatably provided at predetermined intervals in the circumferential direction around the upper surface of the turntable 23. On the upper end surface of each support member 24, a chuck pin 25 having a step portion (not shown) such as an inclined surface is provided at a position eccentric from the rotation center of the support member 24.

  A semiconductor wafer W as a substrate is supplied to the rotary table 23 with the device surface facing upward. In other words, the semiconductor wafer W supplied to the turntable 23 is engaged with the step portion of the chuck pin 25 at the lower surface of the peripheral portion. When the support member 24 is rotated in this state, the chuck pin 25 rotates eccentrically, so that the peripheral edge of the semiconductor wafer W is held. The support member 24 is biased in the rotation direction in which the chuck pin 25 holds the semiconductor wafer W by a spring (not shown), and can be released from the holding state by rotating against the biasing force of the spring. It has become.

The rotary table 23 is rotationally driven by a control motor 31. The control motor 31 includes a cylindrical stator 33 in which a cylindrical rotor 33 is rotatably inserted. The rotary table 23 is connected to the rotor 33 via a power transmission member 33a. Yes.
The rotation of the control motor 31 is controlled by a control device 34. Thereby, the rotary table 23 can be rotated at a predetermined rotational speed by the control device 34.

  A cylindrical fixed shaft 35 is inserted into the rotor 33. A nozzle head 36 located on the upper surface side of the rotary table 23 is provided at the upper end of the fixed shaft 35. That is, the nozzle head 36 is provided so as not to rotate together with the rotary table 23. The nozzle head 36 is provided with a first lower nozzle body 37 that ejects an etching liquid as a processing liquid and a second lower nozzle body 38 that ejects a rinsing liquid.

  As a result, the processing liquid and the rinsing liquid can be selectively ejected from the lower nozzle bodies 37 and 38 toward the central portion of the lower surface of the semiconductor wafer W held on the rotary table 23. In other words, the lower surface of the semiconductor wafer W can be etched and rinsed.

  The upper surface side of the rotary table 23 is covered with a turbulent flow prevention cover 39. The turbulent flow prevention cover 39 prevents the turbulent flow from occurring on the lower surface side of the semiconductor wafer W held on the rotary table 23, and the central portion of the turbulent flow preventive cover 39 is connected to the semiconductor wafer from the nozzles 37 and 38. A through-hole 40 is formed in the lower surface of W so as to be able to spray an etching solution or a rinsing solution.

  The rotary table 23 has a plurality of support pins 42 radially inward of the chuck pins 25, and in this embodiment, four support pins 42 are movable up and down at predetermined intervals in the circumferential direction as will be described later. Is provided. 5A and 5B show a structure for attaching the support pins 42 to the rotary table 23. FIG. That is, the mounting hole 43 is formed in the rotary table 23 so as to penetrate the upper and lower surfaces. A movable shaft 44 is inserted into the mounting hole 43 so as to be movable up and down. A lower bushing 46 is attached to the lower end surface of the movable shaft 44 by a screw 45.

  The movable shaft 44 is supported by an upper bush 47 provided on the upper surface side of the rotary table 23 so as to be movable in an axial manner, and a cylindrical cover 48 having an open lower surface is integrally formed at the upper end. A spring 49 that biases the movable shaft 44 downward is provided between the lower bush 46 and the upper bush 47. The support pin 42 is screwed substantially vertically onto the upper surface of the cover 48 at the upper end of the movable shaft 44.

  The support pins 42 are at a position lower than the lower surface of the semiconductor wafer W held on the rotary table 23 by the chuck pins 25, and are raised when the holding state by the chuck pins 25 is released, so that the lower surface of the semiconductor wafer W is raised. Is pressed and raised to a predetermined height for support. The turbulent flow prevention cover 39 is formed with an opening 39a through which the cover 48 can project.

  As shown in FIG. 4, a pressing ring 51 is provided on the outer periphery of the power transmission member 33a so as to move up and down. One end of a connecting member 52 is connected to the pressing ring 51. The other end of the connecting member 52 is connected to the cylinder 53. The cylinder 53 moves the pressing ring 51 up and down via the connecting member 52.

  When the pressing ring 51 is driven from the lowered position shown in FIG. 5 (a) to the raised position as shown in FIG. 5 (b), the lower bushing 46 is pressed by the upper surface of the pressing ring 51. The movable shaft 44 on which the pin 41 is erected is driven in the upward direction against the urging force of the spring 49. Accordingly, the support pins 41 raise and support the semiconductor wafer W. In other words, the holding state of the peripheral edge portion of the semiconductor wafer W by the chuck pins 25 is released, and the lower surface is supported by the support pins 41.

  An arm body 55 as a drive mechanism is provided on the side of the cup body 1. The arm body 55 includes a vertical portion 56 and a horizontal portion 57 having a base end connected to the upper end of the vertical portion 56. The lower end of the vertical portion 56 is connected to a rotary motor 58. The rotary motor 58 drives the arm body 55 to rotate in the horizontal direction at a predetermined angle.

  The rotary motor 58 is attached to a movable plate 59 that is slidable in the vertical direction by a linear guide (not shown). The movable plate 59 is driven in the vertical direction by the vertical drive cylinder 61.

  A rotary drive source 62 such as a motor is provided at the tip of the horizontal portion 57 of the arm body 55, and an upper nozzle body 63 is provided on a rotary shaft 62 a of the rotary drive source 62. The upper nozzle body 63 has a disc shape, and a plurality of liquid nozzle holes 64 are formed on the outer peripheral surface, and a gas nozzle hole for injecting an inert gas such as nitrogen is formed on the lower surface, although not shown. Has been. The rotational drive source 62 can set the rotational speed by the control device 34.

  The upper nozzle body 63 is selectively supplied with an etching solution as a processing solution (not shown) and pure water through the rotating shaft. The etching solution or pure water supplied to the upper nozzle body 63 is sprayed from a liquid nozzle hole 64 opened on the outer peripheral surface thereof. Moreover, an inert gas can be injected from the gas nozzle hole.

  The scattering distance of the etching liquid and pure water sprayed radially outward from the liquid nozzle hole 64 of the upper nozzle body 63 from the center of the semiconductor wafer W to the radial outward direction is the supply of the etching liquid and pure water. It is determined by the pressure, the height of the upper nozzle body 63 from the upper surface of the semiconductor wafer W, and the rotational speed of the upper nozzle body 63.

  Therefore, for example, if the supply pressure of the etching liquid and pure water and the height of the upper nozzle body 63 are made constant, the scattering distance between the etching liquid and pure water can be set by the rotational speed of the upper nozzle body 63. .

  Next, the case where the peripheral portion of the semiconductor wafer W that has been subjected to the predetermined processing by the spin processing apparatus having the above-described configuration or the semiconductor wafer W before the predetermined processing is performed by the spin processing apparatus will be described.

  First, when the semiconductor wafer W is held by the chuck pins 25 of the rotary table 23 with the device surface facing upward, the holding state of the semiconductor wafer W by the chuck pins 25 is released. Next, the cylinder 53 is operated to raise the pressing ring 51 via the connecting member 52. As a result, the movable shaft 44 provided with the support pins 42 at the upper end is pressed and lifted, so that the semiconductor wafer W is held by releasing the holding state of the peripheral edge by the chuck pins 25.

  Next, the horizontal portion 57 of the arm body 55 is rotated to position the upper nozzle body 63 at a predetermined height above the central portion of the semiconductor wafer W, and then purely discharged from the liquid nozzle hole 64 of the upper nozzle body 63. The rotary drive source 62 is operated while water is jetted, and the upper nozzle body 63 is rotated. The number of rotations of the upper nozzle body 63 is gradually increased by the control device 34. Thereby, the scattering distance of pure water ejected from the liquid nozzle hole 64 of the upper nozzle body 63 increases in proportion to the rotational speed.

  As indicated by an arrow X in FIG. 6, if the rotational speed of the upper nozzle body 63 increases and the pure water sprayed from the liquid nozzle hole 64 reaches the peripheral edge of the semiconductor wafer W, the upper nozzle body 63 Maintain the speed in that state. Then, the supply of pure water to the upper nozzle body 63 is stopped and the etching solution is supplied.

  As a result, the etching liquid sprayed from the liquid nozzle hole 64 is supplied only to the peripheral edge of the semiconductor wafer W, so that only the peripheral edge is etched. At this time, the etching liquid may be sprayed from the first lower nozzle body 37 to simultaneously etch the entire lower surface of the semiconductor wafer W.

  When etching the peripheral portion of the semiconductor wafer W by spraying the etching liquid from the liquid nozzle hole 64, as shown by an arrow Y in FIG. 6, from a gas nozzle hole (not shown) formed on the lower surface of the upper nozzle body 63. If an inert gas is supplied to the central portion of the semiconductor wafer W, it flows radially outward from the central portion, so that the etching solution supplied to the peripheral portion of the semiconductor wafer W is radial from the peripheral portion of the semiconductor wafer W. It can be prevented from flowing inward. Therefore, only the peripheral portion of the semiconductor wafer W is etched, and the portion where the device on the upper surface is formed is not etched.

  If the etching solution is supplied to the semiconductor wafer W for a predetermined time, the supply of the etching solution to the upper nozzle body 63 is stopped and pure water is supplied. At this time, the rotation speed of the upper nozzle body 63 is maintained without decreasing. Thereby, the etching liquid is prevented from dripping onto a portion radially inward from the peripheral edge of the semiconductor wafer W, that is, a portion that does not need to be etched.

  When the switching from the etchant to pure water is completed and the etchant in the upper nozzle body 63 is replaced with pure water, the upper nozzle body 63 is rotated for a predetermined time, and then the rotation is stopped. As a result, pure water is supplied to the peripheral edge of the semiconductor wafer W for a predetermined time, so that the peripheral edge of the semiconductor wafer W etched with the etching solution is rinsed with pure water. At this time, if pure water is supplied to the lower surface of the semiconductor wafer W by the second lower nozzle body 38 on the lower surface of the semiconductor wafer W, the entire lower surface can be rinsed.

  Thus, the upper nozzle body 63 is rotated, and the etching solution is supplied to the peripheral edge of the semiconductor wafer W by the centrifugal force generated by the rotation. At the start of etching, pure water is supplied until the rotational speed of the upper nozzle body 63 is a predetermined rotational speed, that is, until the etching liquid sprayed from the liquid nozzle hole 64 is supplied only to the peripheral edge of the semiconductor wafer W, At the end of etching, pure water was supplied to the liquid nozzle hole 64 and then the rotation of the upper nozzle body 63 was stopped.

  Therefore, since the etching liquid is not supplied to the part other than the peripheral part of the semiconductor wafer W, only the peripheral part of the semiconductor wafer W is etched, and the part where the device other than the peripheral part is formed is etched. Absent.

  That is, when the rotation speed of the upper nozzle body 63 is such that the centrifugal force that reaches the peripheral edge of the semiconductor wafer W does not act on the etching liquid, pure water is supplied from the liquid nozzle hole 64. For this reason, when the rotational speed of the upper nozzle body 63 is equal to or lower than the predetermined rotational speed, pure water is supplied to portions other than the peripheral portion of the semiconductor wafer W, so that the device surface of the semiconductor wafer W is unnecessarily etched by the etching solution. Only the peripheral edge can be etched without being done.

  When etching the peripheral portion of the semiconductor wafer W, the holding state of the peripheral portion of the semiconductor wafer W by the chuck pins 25 is released, and the lower surface is supported by the support pins 42. If the peripheral edge of the semiconductor wafer W is held by the chuck pins 25, the etching solution may not enter the portion and the etching may not be reliably performed. However, if the lower surface of the semiconductor wafer W is supported and etched by the support pins 42, the entire peripheral edge can be etched uniformly.

  Pure water and etching liquid can be selectively supplied to the liquid nozzle hole 64 of the upper nozzle body 63. Therefore, if pure water is supplied after supplying the etching solution, the peripheral portion of the etched semiconductor wafer W can be rinsed continuously with the etching process.

  Thus, since the semiconductor wafer W can be etched by the spin processing apparatus, the etching process can be performed continuously with the spin processing by the spin processing apparatus. Therefore, not only can productivity be improved, but there is an advantage that an apparatus dedicated to etching processing is not required.

  FIG. 7 shows a modification of the second embodiment. In this embodiment, an umbrella-shaped injection range regulating member 66 is provided on the lower surface side of the upper nozzle body 63. The injection range regulating member 66 is formed to have a diameter slightly smaller than the diameter of the semiconductor wafer W. That is, the peripheral edge of the semiconductor wafer W is exposed from the outer periphery of the injection range restricting member 66.

  Accordingly, it is possible to prevent the etching liquid sprayed from the liquid nozzle hole 64 of the upper nozzle body 63 from adhering to a portion other than the peripheral portion of the semiconductor wafer W, so that the portions other than the peripheral portion of the semiconductor wafer W are etched. Can be prevented.

(Third embodiment)
8 and 9 show a third embodiment of the present invention. The processing apparatus of this embodiment has a housing 70. A processing tank 71 is provided in the housing 70. The treatment tank 71 has a ring shape in which an opening 72 is formed at the center, and a ring-shaped liquid path 73 is formed around the opening 72. The diameter of the opening 72 is set to be slightly smaller than the diameter of the semiconductor wafer W whose peripheral portion is etched.

  The liquid path 73 is supplied with an etching liquid L as a processing liquid by a plurality of liquid nozzle bodies 74 as processing liquid supply means. As shown in FIG. 8, each liquid nozzle body 74 is provided with its tip portion directed in the same circumferential direction with respect to the liquid path 73, in this embodiment, in the counterclockwise direction. As a result, the etching liquid L supplied from each liquid nozzle body 74 to the liquid path 73 flows in the counterclockwise direction in the liquid path 73 as indicated by an arrow in FIG.

  The liquid path 73 has an inner wall 73a and an outer wall 73b. The outer wall 73b is provided with a plurality of drainage holes 75 as drainage portions at predetermined intervals in the circumferential direction at a position slightly higher than the upper end of the inner wall 73a. As will be described later, the etching liquid L supplied to the liquid passage 73 and flowing out from the drain hole 75 is received by a drain pan 76 provided below the processing tank 71 and then a plurality of drains connected to the drain pan 76. It is discharged through the liquid pipe 77.

  As shown in FIG. 7, the non-device surface of the semiconductor wafer W whose peripheral portion is etched is sucked by the suction chuck 78 and supplied to the processing tank 71 with the device surface facing down. That is, the semiconductor wafer W is positioned in a state in which the peripheral portion of the device surface faces the liquid path 73 and the device surface is close to the upper end of the inner wall 73a.

  An annular supply path 79 is formed around the suction chuck 78 to supply an inert gas from the periphery of the upper surface of the semiconductor wafer W toward the outer periphery. On the lower surface of the semiconductor wafer W positioned at a predetermined position in the processing bath 71, the lower nozzle body 81 having an annular injection port flows radially outward to the periphery of the lower surface (device surface) of the semiconductor wafer W. An inert gas is supplied.

  A plurality of exhaust pipes 82 for exhausting the inert gas supplied from the lower nozzle body 81 to the device surface of the semiconductor wafer W from the lower nozzle body 81 are provided in the circumferential direction at predetermined intervals, for example, 90 ° intervals. It is connected.

  According to the processing apparatus configured as described above, the semiconductor wafer W on which the non-device surface is adsorbed by the suction chuck 78 is positioned with the peripheral portion of the device surface facing the liquid path 73 of the processing tank 71. In the liquid path 73, the etching solution supplied by the liquid nozzle body 74 flows along a counterclockwise direction that is a predetermined direction. Therefore, the peripheral portion of the semiconductor wafer W is etched by the etching solution flowing through the liquid path 73.

  An inert gas is supplied to the periphery of the upper surface of the semiconductor wafer W held by the suction chuck 78 from an annular supply path 79 provided outside the suction chuck 78 toward the outer periphery, and the lower surface of the device surface. An inert gas is annularly supplied to the periphery from the lower nozzle body 81 toward the outer periphery.

  As a result, even if the peripheral portion of the device surface of the semiconductor wafer W is brought into contact with the etching solution L supplied to the liquid path 73, the etching solution L flows from the peripheral portion of the semiconductor wafer W inward in the radial direction of the upper and lower surfaces. This prevents the semiconductor wafer W from being etched except for the peripheral edge.

  Moreover, the etching liquid L supplied to the liquid path 73 flows through the liquid path 73 in a predetermined direction. Therefore, since the etching solution uniformly contacts the peripheral portion of the semiconductor wafer W, the peripheral portion is uniformly etched.

(Fourth embodiment)
FIG. 10 shows a processing apparatus according to the fourth embodiment of the present invention. This processing apparatus includes a cylindrical processing body 91. The processing body 91 is formed by an outer cylindrical portion 92 formed of a material having rigidity such as metal or synthetic resin, and an inner cylindrical portion 93 provided integrally in the outer cylindrical portion 92. These are fixedly provided with the axis substantially vertical.

  The inner cylinder portion 93 is formed of a material, such as a sponge, that is permeable to liquid and has a softness that does not damage the semiconductor wafer W even when the semiconductor wafer W comes into contact therewith. A spiral groove 94 is formed on the inner peripheral surface of the inner cylinder portion 93 over the entire length in the vertical direction. The middle part in the axial direction of the inner cylinder part 93 includes a lower cylinder part 93a and an upper cylinder part 93b via a liquid shielding member 95 formed in a ring shape by an elastic material that does not permeate liquid, such as rubber. It is separated into.

  An etching solution supply pipe 96 is connected to the upper portion of the spiral groove 94 of the lower cylindrical portion 93 a with its axis line tangential to the spiral groove 94. The etching solution is supplied from the etching solution supply pipe 96 to the spiral groove 94 of the lower cylindrical portion 93a. The etching solution supplied to the spiral groove 94 of the lower cylinder portion 93a flows downward through the spiral groove 94, and most of the etching solution permeates the lower cylinder portion 93a made of sponge.

  An etching solution discharge pipe 97 is connected to the lower portion of the lower cylinder portion 93a in communication with the spiral groove 94. The etching solution that has flowed through the spiral groove 94 of the lower cylinder portion 93a and the etching solution that permeates the lower cylinder portion 93a and flows downward are discharged from the etching solution discharge pipe 97.

  A rinsing liquid supply pipe 98 for supplying a rinsing liquid such as pure water to the spiral groove 94 is connected to the upper portion of the upper cylindrical portion 93 b with the axis line directed in the tangential direction of the spiral groove 94. A rinsing liquid discharge pipe 99 that discharges the rinsing liquid that flows along the spiral groove 94 and the rinsing liquid that has permeated the upper cylindrical part 93b and has flowed downward is connected to the lower portion of the upper cylindrical portion 93b.

The rinse liquid that has permeated the upper cylinder portion 93b is prevented from penetrating into the lower cylinder portion 93b by the liquid shielding member 95.
Therefore, the lower side than the liquid shielding member 95 of the processing body 91 is a processing region in which the peripheral portion of the semiconductor wafer W as a substrate is etched as described later by supplying an etching solution. The side is a rinse region in which the peripheral edge of the semiconductor wafer W etched with the rinse liquid is rinsed.

  Below the processing body 91, a suction chuck 101 for sucking and holding the lower surface of the semiconductor wafer W is provided. The suction chuck 101 is attached to the upper end of the screw shaft 102. The upper end of the screw shaft 102 is screwed into the nut body 103, and the lower end is connected to a rotating shaft 105 a of a motor 105 as a driving means provided on the upper surface of the elevator board 104.

  The nut body 103 is fixedly attached to a support member 107 fixed to the fixing portion 106. Sliders 108 are provided on both sides of the elevator board 104. The slider 108 is movably engaged with a guide groove 111 of a guide member 110 erected on the base board 109.

  Thereby, when the motor 105 is operated and the screw shaft 102 is rotationally driven by the rotating shaft 105a, the screw shaft 102 moves up and down with respect to the nut body 103 while rotating.

  The pitch of the screw of the screw shaft 102 and the pitch of the spiral groove 94 formed in the inner cylinder portion 93 of the processing body 91 are the same. Further, the outer dimension of the semiconductor wafer W and the inner diameter dimension of the spiral groove 94 are set to be substantially the same.

  Therefore, when the screw shaft 102 is rotationally driven by the motor 105 in the direction of ascending with respect to the nut body 103, the semiconductor wafer W held by the suction chuck 101 at the upper end of the screw shaft 102 has the peripheral portion thereof spiraled. The groove 94 is inserted and engaged, and rises along the spiral groove 94.

  Next, the case where the peripheral portion of the semiconductor wafer W is etched by the processing apparatus having the above configuration will be described. First, the unprocessed semiconductor wafer W is transferred to the suction chuck 101 by an unillustrated robot or the like and sucked and held.

  When the etchant is supplied from the etchant supply pipe 96 to the lower cylinder part 93a and the rinse liquid is supplied from the rinse liquid supply pipe 98 to the upper cylinder part 93b, the motor 105 is operated to rotate the screw shaft 102. Raise.

  As the screw shaft 102 is raised while rotating, the semiconductor wafer W sucked and held by the suction chuck 101 is moved up in the processing body 91 by engaging the peripheral portion with the spiral groove 94 of the lower cylinder portion 93a. An etching solution is supplied to the lower cylinder portion 93a through an etching solution supply pipe 96, and the etching solution flows along the spiral groove 94 and penetrates into the lower cylinder portion 93a.

  As a result, as shown by a chain line in FIG. 11, the peripheral portion of the semiconductor wafer W rising while rotating with the peripheral portion engaged with the spiral groove 94 is etched by the etching solution.

  When the semiconductor wafer W passes through the spiral groove 94 of the lower cylinder portion 93a, the semiconductor wafer W moves to the spiral groove 94 of the upper cylinder portion 93b. A rinse liquid is supplied to the spiral groove 94 of the upper cylinder portion 93b. Therefore, in the semiconductor wafer W whose peripheral portion is etched by passing through the spiral groove 94 of the lower cylinder portion 93a, the peripheral portion where the etching solution adheres and remains is rinsed with the rinse liquid. Then, as shown by a chain line in the figure, by exiting upward from the upper end opening of the processing body 91 of the semiconductor wafer W, the rotational rise of the screw shaft 102 is stopped and the rinsing process is completed. At the same time, it is received from the suction chuck 101 by a robot (not shown) and accommodated in a case (not shown).

  When the suction chuck 101 is removed from the etched and rinsed semiconductor wafer W, the screw shaft 102 is driven to rotate in the reverse direction by the motor 105. When the suction chuck 101 is lowered below the lower end opening of the processing body 91, the rotation of the screw shaft 102 is stopped, and a standby state is entered until an unprocessed semiconductor wafer W is supplied.

  As described above, according to the processing apparatus of this embodiment, the peripheral portion of the semiconductor wafer W is engaged with the spiral groove 94 formed on the inner peripheral surface of the processing body 91 and is raised while being rotated. The peripheral edge can be etched. That is, the semiconductor wafer W can be reliably etched only at the peripheral edge engaged with the spiral groove 94.

  The etching liquid is supplied to the lower cylinder portion 93a of the processing body 91, and the rinsing liquid is supplied to the upper cylinder portion 93b. Therefore, it is possible to perform a rinsing process on the peripheral edge of the semiconductor wafer W continuously with the etching process, so that productivity can be improved.

  The lower cylinder portion 93a and the upper cylinder portion 93b of the treatment body 91 are made of a material that has elasticity and is permeable to liquid. Therefore, the cylindrical portions 93a and 93b do not damage the peripheral edge of the semiconductor wafer W, and the spiral grooves 94 of the cylindrical portions 93a and 93b sufficiently contain the etching solution and the rinsing solution, respectively. Etching and rinsing can be performed sufficiently on the peripheral edge of W.

  The rinse liquid supplied to the upper cylinder part 93b is prevented from penetrating into the lower cylinder part 93a by the liquid shielding member 95. Therefore, the rinsing liquid supplied from the rinsing liquid supply pipe 98 to the upper cylindrical part 93b flows into the lower cylindrical part 93a, and the etching liquid supplied to the lower cylindrical part 93a is not diluted by the rinsing liquid. The etching process in the lower cylinder part 93a can be performed reliably.

  The processing body 91 has an etching processing region on the lower side and a rinsing processing region on the upper side. Therefore, the etching solution does not enter the rinsing region, so that the rinsing process in the rinsing region can be reliably performed.

  In this embodiment, the semiconductor wafer W is raised while being rotated. However, the semiconductor wafer W may only be rotated and the processing body may be lowered, or may be lowered while the processing body is rotated. It may be.

  Although the elevator board is arranged below the processing body, the elevator board is arranged above the processing body, the upper surface of the semiconductor wafer is sucked and held by the suction chuck, and the suction chuck is raised from below the processing body. The semiconductor wafer may be sequentially subjected to etching and rinsing.

The side view which shows the processing apparatus of 1st Embodiment of this invention. The top view of the processing apparatus shown in FIG. The figure which shows the flow of the etching liquid in the peripheral part of a semiconductor wafer. The schematic block diagram of the spin processing apparatus as a processing apparatus which shows 2nd Embodiment of this invention. (A), (b) is explanatory drawing of the operation | movement which supports a semiconductor wafer with a support pin. Explanatory drawing which shows the state which injects etching liquid only to the peripheral part of a semiconductor wafer from an upper nozzle body. The figure which shows the modification of 2nd Embodiment. The longitudinal cross-sectional view of the processing apparatus which shows 3rd Embodiment of this invention. The top view of the processing apparatus shown in FIG. The schematic block diagram of the processing apparatus which shows 4th Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... 1st drive means, 10 ... Drive shaft (gas supply pipe) 11 ... Rotary disk, 12 ... Drive mechanism (2nd drive means), 13 ... Upper nozzle body (upper process liquid supply means), 14 ... Lower part Nozzle body (lower process liquid supply means), 23 ... rotary table, 25 ... chuck pin, 42 ... support pin, 63 ... upper nozzle body, 64 ... liquid nozzle hole, 66 ... injection range regulating member, 71 ... treatment tank, 73 ... Liquid passage, 74 ... Liquid nozzle body (treatment liquid supply means), 75 ... Drain hole (drainage part), 78 ... Adsorption chuck (holding means), 81 ... Lower nozzle body (gas supply means), 91 ... Processing body, 94 ... Helix groove, 96 ... Etching liquid supply pipe (processing liquid supply means), 101 ... Suction chuck (holding means), 102 ... Screw shaft (driving means), 105 ... Motor (driving means).

Claims (12)

In the processing apparatus for processing the peripheral edge of the substrate with the processing liquid,
First driving means for holding the substrate substantially horizontally and rotationally driving it in the circumferential direction;
A turntable that is formed to be slightly smaller in diameter than the substrate and substantially coincides with the rotation center of the substrate and that is opposed to the upper surface of the substrate at a predetermined interval;
A second driving means for rotationally driving the rotating disk;
An upper processing liquid supply means for supplying a processing liquid to the upper surface of the rotating disk that is driven to rotate and flowing the processing liquid from a peripheral edge of the rotating disk to a peripheral edge of the substrate. Processing equipment.   2. The substrate processing apparatus according to claim 1, wherein a gas supply pipe for supplying an inert gas is connected to the central portion of the rotating disk between the rotating disk and the substrate.   2. The substrate processing apparatus according to claim 1, further comprising lower processing liquid supply means for supplying a processing liquid to substantially the entire lower surface of the substrate that is rotationally driven. In the processing apparatus for processing the peripheral edge of the substrate with the processing liquid,
A rotationally driven table;
A chuck pin that is provided on the table and holds the peripheral edge of the substrate, and a support pin that supports the lower surface of the substrate when the holding of the substrate by the chuck pin is released;
A nozzle body that has a nozzle hole formed on the outer peripheral surface and that is disposed above the center of the rotary table and sprays the processing liquid from the nozzle hole at a distance corresponding to a centrifugal force generated by being driven to rotate. A substrate processing apparatus.   A treatment liquid and pure water can be selectively supplied to the nozzle body. Pure water is first ejected from the nozzle holes of the nozzle body, and the pure water is ejected to the peripheral edge of the substrate. 5. The substrate processing apparatus according to claim 4, wherein after the number of rotations of the nozzle body is set as the number of rotations, the processing liquid is ejected from the nozzle holes.   Below the nozzle body, there is provided an ejection range regulating member that restricts the treatment liquid ejected from the nozzle hole of the nozzle body from being ejected to a location other than the peripheral edge of the substrate. The substrate processing apparatus according to claim 4. In the processing apparatus for processing the peripheral edge of the substrate with the processing liquid,
A treatment tank having a ring-shaped liquid passage of a predetermined diameter;
Treatment liquid supply means for supplying the treatment liquid to the liquid passage so as to flow in a predetermined direction;
And a holding means for holding the non-device surface with the device surface facing down and the non-device surface facing up so that the peripheral portion contacts the processing liquid flowing in the liquid path in a predetermined direction. Processing equipment.   8. The substrate processing apparatus according to claim 7, further comprising gas supply means for supplying an inert gas to the device surface and preventing the processing liquid from flowing into the device surface.   The treatment tank is provided with a drainage portion for discharging the treatment liquid supplied to the liquid passage at substantially the same height as the upper surface of the substrate whose peripheral portion is in contact with the treatment liquid in the liquid passage. The substrate processing apparatus according to claim 7. In the processing apparatus for processing the peripheral edge of the substrate with the processing liquid,
A treatment body having a cylindrical shape with an upper end surface and a lower end surface opened, and a peripheral portion of the substrate inserted into the inner peripheral surface to form a spiral groove;
Treatment liquid supply means for supplying a treatment liquid to the spiral groove;
Holding means for holding the plate surface of the substrate;
A substrate processing apparatus comprising: a driving unit that rotationally drives the holding unit or the processing body to move the substrate held by the holding unit relatively along the spiral groove.   11. The substrate according to claim 10, wherein the treatment body has a lower portion which is a treatment region where a treatment liquid is supplied to the spiral groove and an upper portion which is a rinse region where the rinse liquid is supplied to the spiral groove. Processing equipment.   12. The substrate processing apparatus according to claim 10, wherein at least an inner peripheral portion where the spiral groove is formed of the processing body is formed of a material that allows liquid to penetrate.

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