JP2011044495A - Etching treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an etching treatment device capable of reducing the number of treatment processes, and capable of reducing a facility cost, compared with the case of forming a photomask pattern. <P>SOLUTION: The etching treatment device includes a coating means 14 detachably attachable to an object W to be treated, the coating means coating a prescribed area of a face Wa to be treated of the object W, under a condition of being attached to the object W, and blocking contact with a treating liquid or treating gas in the prescribed area. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to an etching processing apparatus that performs an etching process by supplying a processing liquid and a processing gas while rotating an object to be processed such as a semiconductor wafer.

  For example, in the field of electronic devices such as semiconductor devices and liquid crystal display panels, an etching process is performed in which a semiconductor substrate, a glass substrate, a magnetic substrate, an LED substrate, or the like is an object to be processed, and the surface of the object to be processed is etched in a predetermined pattern. Is widely practiced. For example, in a semiconductor wafer, a part of the semiconductor wafer is thinned, and a part of the semiconductor wafer is thickened, thereby realizing a reduction in thickness and ensuring the strength of the semiconductor wafer.

JP 2004-281551 A

For example, Patent Document 1 includes a first substrate portion having a first thickness and a second substrate portion having a second thickness that is greater than the first thickness, and the second substrate. A semiconductor substrate is disclosed in which the portion is formed along the outer periphery of the semiconductor substrate. As a manufacturing method, there is a method in which a concave surface is formed by applying a resist to a thick substrate, exposing and developing to form a photomask pattern, and etching.
However, as in Patent Document 1, when a photomask pattern is formed and etched, (1) resist application, (2) exposure, (3) development, (4) etching, (5) resist removal, etc. Many processes were required, and time and labor were generated. Moreover, the apparatus for implementing these each process (1)-(5) is required, and the burden of equipment cost became a problem.

  Therefore, an object of the present invention is to propose an etching processing apparatus and an etching processing method that have fewer processing steps and lower equipment costs than the case of using a photomask pattern.

The etching processing apparatus of the present invention includes a holding unit that holds a workpiece such as a semiconductor wafer, a supply unit that supplies a processing liquid or a processing gas for etching to a surface to be processed of the workpiece, and a rotation of the workpiece. In an etching processing apparatus comprising rotating means for causing
It is detachable from the object to be processed, covers a predetermined area of the surface of the object to be processed while being attached to the object to be processed, and blocks contact of the processing liquid or processing gas in the predetermined area. It is characterized by including a covering means.

  According to the present invention, when the object to be processed is held by the holding means and the covering means is attached to the object to be processed, a predetermined area of the surface to be processed of the object to be processed is covered by the covering means. . When the processing liquid or processing gas for etching is supplied while rotating the object to be processed in this state, the area covered with the coating means is not corroded by contact with the processing liquid or processing gas, The area corrodes.

  Preferably, the covering means includes a first member and a second member that can be attached to and detached from the first member, and the second member covers at least a part of a predetermined region of the surface to be processed of the object to be processed.

  According to this invention, since the second member can be attached to and detached from the first member, if a second member having a different shape or size is appropriately replaced and used, etching can be performed in a desired pattern. Even if the two members are damaged or deteriorated, they can be easily replaced.

  The covering means has an opening that exposes the object to be processed when attached to the object to be processed, and the opening has a peripheral edge that is outside from the contact surface side with the surface to be processed of the object to be processed. It is inclined in a direction that spreads toward.

  When the processing liquid or the processing gas is supplied while rotating the object to be processed, the processing liquid or the processing gas flows into the opening provided in the covering means, and the region exposed by the opening corrodes. At this time, if the processing liquid or the processing gas is biased and stays in the vicinity of the peripheral edge portion of the opening due to the rotation operation of the object to be processed, the progress of corrosion at that portion is accelerated, and the etching becomes uneven. According to the present invention, since the peripheral edge of the opening is inclined in a direction spreading outward from the contact surface side with the surface to be processed of the object to be processed, the processing liquid and the processing gas flowing into the opening Is quickly discharged as the workpiece is rotated. Thereby, the processing liquid and the processing gas do not stay near the peripheral edge of the opening, and the progress of corrosion in the region exposed by the opening can be made uniform.

  In the state where the covering means is attached to the object to be processed held by the holding means, it is preferable to include a gas supply means capable of supplying gas between the surface to be processed of the object to be processed and the covering means.

  When a minute gap is generated between the surface to be processed of the object to be processed and the covering means, the processing liquid may enter the gap due to capillary action. According to the present invention, since gas can be supplied between the surface to be processed and the covering means, even if a minute gap occurs, the gas is supplied to the gap and Intrusion can be prevented.

  According to the present invention, by removing the covering means from the surface to be processed of the object to be processed, the area covered by the covering means does not corrode, the exposed area corrodes, and etching is performed in a predetermined pattern. It becomes possible. Etching using a conventional photomask pattern requires many steps such as (1) resist application, (2) exposure, (3) development, (4) etching, and (5) resist removal. According to the invention, it is only necessary to attach / detach the covering means to / from the object before and after etching, and etching can be performed with very few processing steps. A processing apparatus dedicated to each of the above steps (1) to (5) is also unnecessary, and it is only necessary to add the covering means of the present invention to a conventional single wafer processing apparatus, so that the equipment cost can be suppressed.

It is a schematic sectional drawing explaining the internal structure of the etching processing apparatus of 1st embodiment of this invention. It is a figure which shows the coating | coated means of the said embodiment, (a) is the top view, (b) is the bottom view, (c) is the sectional drawing. It is a schematic explanatory drawing explaining operation | movement of the etching processing apparatus of the said embodiment, (a) is explanatory drawing explaining a semiconductor wafer setting process, (b) (c) (d) demonstrates a coating | coated means setting process. Explanatory drawing, (e) is explanatory drawing explaining an etching process process. It is a top view which shows the state by which the semiconductor wafer was set to the holding table of the said embodiment. It is a figure which shows the semiconductor wafer after the etching process of the said embodiment, (a) is the top view, (b) is the sectional drawing. It is a figure which shows the coating | coated means of Example 1 of 1st embodiment of this invention, (a) The top view, (b) The bottom view, (c) is the sectional drawing, ( d) is a sectional view showing a state in which each member is detached. It is a figure which shows Example 2 (application example of 1st embodiment) of 1st embodiment of this invention, (a) is a top view of a coating | coated means, (b) is the sectional drawing. It is a figure which shows Example 2 (application example of other examples 1 of 1st embodiment) of 1st embodiment of this invention, (a) is a top view of a covering means, (b) is the cross section. FIG. It is a schematic sectional drawing explaining the internal structure of the etching processing apparatus of the 2nd form of this invention. It is a figure which shows the coating | coated means of the said embodiment, (a) is a top view of the holding table provided with the coating | coated means, (b) is the sectional drawing. It is a figure which shows the fixing means of the said embodiment, (a) is the top view, (b) is the bottom view, (c) is the sectional drawing. It is a schematic explanatory drawing explaining operation | movement of the etching processing apparatus of the said embodiment, (a) is a semiconductor wafer setting process, (b) is a semiconductor wafer fixing process, (c) It is a figure explaining an etching processing process. It is a figure which shows the other example 1 of 2nd embodiment of this invention, (a) is a top view of a holding table, (b) is the sectional drawing. It is sectional drawing of the holding table in which the coating | coated means of the other example 2 of 2nd embodiment of this invention was provided, (a) is an application example of said 2nd embodiment, (b) This is an application example of the other example 1 of the second embodiment. It is explanatory drawing explaining the locking mechanism of 3rd embodiment of this invention. It is a figure which shows the coating | coated means which comprises a part of lock mechanism of the said embodiment, (a) is the top view, (b) is the bottom view, (c) is the sectional drawing. It is a figure which shows the holding table which comprises a part of locking mechanism of the said embodiment, (a) is the one part expansion perspective view, (b) is the sectional drawing. It is explanatory drawing explaining operation | movement of the etching processing apparatus provided with the locking mechanism of the said embodiment. It is explanatory drawing explaining the etching processing apparatus of 4th embodiment of this invention, (a) is a top view of a holding means, (b) is the sectional drawing. It is a figure which shows the state which mounted | wore the holding | maintenance means of the etching processing apparatus of the said embodiment with the semiconductor wafer and the coating | coated means. It is explanatory drawing which shows the example which applied the air supply means of the said embodiment to 2nd embodiment of this invention.

(First embodiment)
Hereinafter, the semiconductor wafer W is taken as an example of the processing object, and the processing apparatus S1 of the present embodiment will be described in detail. The processing apparatus S1 can perform various processes such as cleaning, etching, plating, and polishing in accordance with the processing liquid or processing gas to be supplied. The present invention is a function effective for the etching process therein. Therefore, hereinafter, the processing apparatus S1 is referred to as an etching processing apparatus S1.

  FIG. 1 is a schematic cross-sectional view showing the internal structure of the etching processing apparatus S1. The etching processing apparatus S1 supplies a processing liquid and a processing gas to the processing surface Wa of the semiconductor wafer W while rotating the semiconductor wafer W while the semiconductor wafer W is held by the holding unit 11, and performs etching processing. This is a leaf type etching apparatus. The etching processing apparatus S1 includes a holding unit U1 that holds the semiconductor wafer W, a chamber unit U2 that can store the holding unit U1, and a detachable unit U3 that is disposed near the chamber unit U2.

  The holding unit U <b> 1 includes a holding unit 11, a rotating unit 12, an elevating mechanism 13, a covering unit 14, and a supplying unit 15.

  The holding unit 11 holds the semiconductor wafer W from the bottom surface side, and has a function of holding the semiconductor wafer W in a state where the processing surface Wa is exposed. In the present embodiment, the holding means 11 includes a disk-shaped holding table 11a and a support portion 11b that supports the holding table 11a from below, and a set portion 11c on which the semiconductor wafer W is set is provided on the upper surface of the holding table 11a. Is provided. A plurality of set portions 11c are provided along the circumference of the semiconductor wafer W on the upper surface of the holding table 11a (see FIG. 4), and have an L-shaped cutout on the inner side. Set in the missing part. Note that the setting unit 11c is not limited to this, and any unit that can fix the semiconductor wafer W to the holding table 11a may be used. For example, the number of the setting unit 11c may be changed or the ring may be formed along the circumference of the semiconductor wafer W. It may be provided.

  The rotation unit 12 has a function of rotating the holding unit 11. In the present embodiment, the rotation unit 12 is a rotary motor driving unit provided below the support portion 11 b of the holding unit 11. The rotating means 12 transmits power to the rotating shaft 11d inserted into the support portion 11b, and horizontally rotates the holding table 11a connected to the rotating shaft 11d, whereby the semiconductor wafer W held on the holding table 11a. Rotate horizontally.

  The lifting mechanism 13 has a function of adjusting the relative position of the holding table 11 a in the housing 21. In this Embodiment, it is the raising / lowering cylinder 13a provided in the lower side of the support part 11b. Specifically, a cylindrical elevating cylinder 13a connected to the support portion 11b is inserted into the elevating shaft 13c via the bearing 13b, and the elevating cylinder 13a moves up and down along the elevating shaft 13c, so that the support portion 11b is moved in the vertical direction. It moves and the position of the holding table 11a provided above the support part 11b can be adjusted. In addition, the raising / lowering mechanism 13 is not restricted to this, For example, you may implement | achieve by a motor gear etc.

  The covering means 14 is detachable from the semiconductor wafer W, covers a predetermined area of the processing surface Wa of the semiconductor wafer W in a state of being mounted on the semiconductor wafer W, and contacts the processing liquid or processing gas in the predetermined area. It has a function to shut off. 2A and 2B are views showing the covering means 14, wherein FIG. 2A is a top view thereof, FIG. 2B is a bottom view thereof, and FIG. 2C is a cross-sectional view thereof. The covering means 14 has a ring shape having an opening 14a at the center. In the cross-sectional view (c), the outer peripheral end portion has a substantially L-shaped cross section provided with a protruding portion 14b, and a concave portion 14c is formed surrounded by the protruding portion 14b. The covering means 14 is arranged so as to cover the semiconductor wafer W held by the set portion 11c, and fits in a state where the protruding portion 14b is located outside the set portion 11c. The recess 14c is provided with a contact surface 14d that comes into contact with the surface Wa of the semiconductor wafer W in close contact. In the present embodiment, the contact surface 14d is a flat surface formed with a constant width along the opening 14a.

  The shape of the covering means 14 is not limited to the ring shape, and may be a shape corresponding to the etching pattern. In other words, the covering means 14 may be shaped so as to expose a region that corrodes the semiconductor wafer W and cover a region that is not corroded.

  The material of the coating means 14 is not particularly limited, but has durability to the etching processing liquid and processing gas, does not transmit the processing liquid and processing gas, and adheres tightly when the semiconductor wafer W is coated. Any processing liquid or processing gas may be used as long as it does not enter between the coating means 14 and the semiconductor wafer W. The material is preferably a fluororesin such as polypropylene, vinyl chloride, PTFE or PVDF. The contact surface 14d is preferably provided with an elastic body (for example, a fluororubber layer) in order to ensure adhesion with the wafer.

  The supply means 15 (15a, 15b, 15c) has a function of supplying a processing liquid and a processing gas to the semiconductor wafer W. The supply means 15 is provided with supply paths 15a, 15b, and 15c for each processing liquid and processing gas, and can supply a plurality of types of processing liquids and processing gases. Each supply path 15a, 15b, 15c is connected to a supply source (supply tank) for each processing liquid or processing gas via a pump or a filter (not shown).

  The chamber unit U <b> 2 includes a housing 21, a partition portion 22 that partitions a space in the housing 21, and a gantry 26 on which the housing 21 is placed.

  The casing 21 has a cylindrical shape with an upper portion opened by an opening 23a, and the holding means 11 can be accommodated therein. A partition 22 (22a, 22b, 22c) is provided on the side surface of the housing 21, and a central moving space 23 serving as a passage for the holding table 11a and a plurality of processing spaces provided along the moving space 23 are provided. 24 (24a, 24b, 24c) are formed.

  The partition portion 22 (22a, 22b, 22c) is a ring-shaped plate-like member that protrudes inward from the inner side surface of the housing 21. A plurality of the partition portions 22 are provided at predetermined intervals along the moving direction (vertical direction) of the holding table 11a, and are inclined downward from the inner side (tip side) toward the outer side.

  The moving space 23 is a passage through which the covering means 14 held by the holding means 11 moves in the vertical direction, and is formed by a hole in the center of the ring-shaped partition portion 22. The moving space 23 communicates with an opening 23 a provided above the housing 21.

  The processing space 24 (24a, 24b, 24c) is a space for performing each processing such as an etching process, and a processing space is allocated for each processing liquid or processing gas supplied from the supply means 15 (15a, 15b, 15c). Is possible. Each processing space 24 (24a, 24b, 24c) is provided with a discharge port 25 (25a, 25b, 25c) so that the processing liquid and the processing gas can be collected. Note that the discharge port 25 (25a, 25b, 25c) may be connected to a supply source (not shown) of processing liquid and processing gas so that the processing liquid and processing gas circulate.

  The gantry 26 has a space inside. In the holding unit U1, the support portion 11b is inserted into the opening 26a communicating with the internal space of the housing 21, the holding means 11 is located in the housing 21, and the rotating means 12 and the lifting mechanism 13 are located in the gantry 26. Is arranged. A bearing 26b is disposed between the opening 26a and the support portion 11b, and the lifting / lowering operation by the lifting / lowering mechanism 13 is smoothed, and the internal space of the housing 21 and the internal space of the gantry 26 are isolated from each other.

  The attaching / detaching unit U3 has a function as attaching / detaching means for holding the attaching means 14 and attaching / detaching it to / from the semiconductor wafer W. The detachable unit U3 includes a base 31 and an arm 32 provided on the base 31. The arm 32 has a substantially L shape including a horizontal portion 32a and a vertical portion 32b, and includes holding portions 32c and 32c capable of holding the covering means 14 at the tip.

  The arm 32 can adjust the position of the holding portion 32 c in the vertical direction and the horizontal direction by the positioning mechanism 33. In the present embodiment, an elevating cylinder 33a is provided in the middle of the vertical portion 32b, and the vertical position of the holding portion 32c can be adjusted by expanding and contracting the vertical portion 32b with the elevating cylinder 33a. A rotary motor drive unit 33b is installed in the base 31, and the position of the holding unit 32c in the horizontal direction can be adjusted by rotating the arm 32 about the vertical portion 32b as a rotation axis by the power of the rotary motor drive unit 33b. It has become.

  The holding portions 32c and 32c are slidable in the horizontal direction by an actuator or the like. The holding means 32c and 32c are fitted into the notch portion 14e of the covering means 14 so that the covering means 14 is sandwiched and opened. Can be detached.

(Usage mode)
The etching processing apparatus S1 of the present embodiment operates as follows. 3A to 3D are schematic explanatory views for explaining the operation of the etching processing apparatus S1. The following operations are computer-controlled by a control unit (not shown).

<Semiconductor wafer setting process>
FIG. 3A is an explanatory view for explaining a semiconductor wafer setting step. The holding table 11a is raised by the elevating mechanism 13 so as to be positioned outside the casing 21 through the opening 23a of the casing 21, and the semiconductor wafer W is set on the holding table 11a. FIG. 4 is a top view showing a state in which the semiconductor wafer W is set on the holding table 11a. The semiconductor wafer W is fitted inside set portions 11c, 11c provided on the upper surface of the holding table 11a.

  In the present embodiment, the semiconductor wafer W is automatically set by the semiconductor wafer transfer robot U4. The semiconductor wafer transfer robot U4 may be a general one used in a single wafer processing apparatus, and is not particularly limited. In the present embodiment, the semiconductor wafer W having substantially the same mechanism as the detachable unit U3 can be transferred in the vertical direction and the horizontal direction, and the semiconductor wafer W is transferred to the set portion 11c of the holding table 11a. The semiconductor wafer W is detached in the positioned state and set on the holding table 11a. The semiconductor wafer transfer robot U4 moves the arm 32 between the set unit 11c and the set unit 11c, thereby avoiding a collision between the arm 32 and the set unit 11c. In the following drawings, the semiconductor wafer transfer robot U4 is omitted.

<Coating means setting step>
3B, 3C, and 3D are explanatory views for explaining the covering means setting step. As shown in FIG. 3 (b), the rotation means driving unit 33b of the positioning means 33 rotates the horizontal part 32a horizontally with the vertical part 32b of the arm 32 as the rotation axis, and the covering means 14 held by the holding part 32c is moved. It is located above the semiconductor wafer W.

  Next, as shown in FIG. 3 (c), the vertical portion 32 b of the arm 32 is contracted by the elevating cylinder 33 a of the positioning means 33, and the covering means 14 held by the holding portion 32 c is lowered to form the semiconductor wafer W. Installing. As a result, the surface Wa of the semiconductor wafer W is covered with the contact surface 14d at the peripheral edge, and the region corresponding to the opening 14a is exposed.

  When the setting of the covering means 14 is completed, as shown in FIG. 3D, the arm 32 detaches the covering means 14 from the holding portion 32c, and horizontally moves the horizontal portion 32a of the arm 32 by the rotary motor driving portion 33b. And retracted from above the semiconductor wafer W. The semiconductor wafer W is fixed to the holding unit 11 by being sandwiched between the set part 11 c and the covering unit 14. In the covering means 14, the projection 14b surrounds the set portion 11c of the holding means 11 from the outside, so that the covering means 14 is not displaced in the horizontal direction, and also in the vertical direction due to its own weight. There is no misalignment.

<Etching process>
FIG. 3E is an explanatory diagram for explaining the etching process. The holding unit U <b> 1 positions the semiconductor wafer W by the lifting mechanism 13. Here, the holding table 11a is lowered by the elevating mechanism 13, and the semiconductor wafer W is positioned in the vicinity of the processing space 24b assigned to the etching process. Thereafter, the rotation means 12 is driven to horizontally rotate the semiconductor wafer W, and in this state, the etching processing liquid or processing gas is supplied from the supply means 15. At this time, the supply port of the supply means 15 is lowered by an elevating mechanism 13 (not shown) and arranged inside the housing 21. The surface Wa of the semiconductor wafer W is supplied with a processing liquid or a processing gas to a region exposed at the opening 14a of the coating unit 14, and a region covered with the contact surface 14d of the coating unit 14 is a processing liquid or processing. It will be in the state cut off from gas. As a result, only the area exposed by the opening 14a is corroded, and the area covered by the contact surface 14d is not corroded and the thickness is maintained.

  The supplied processing liquid or processing gas is scattered outward by the centrifugal force generated by the rotation of the holding table 11a and is collected in the processing space 24b. The collected processing liquid or processing gas is discharged from the discharge port 25b, then flows through the flow path and returns to the supply source (not shown). In the case of processing gas, an intake function may be added to the discharge port 24b to inhale the processing gas.

<Coating means removing step>
When the etching process is completed, the rotation of the semiconductor wafer W and the supply of the processing liquid or the processing gas are stopped, the supply port of the supply means 15 is raised, and the semiconductor wafer W is moved out of the casing 21 by the elevating mechanism 13. The state is the same as in FIG. After that, the arm 32 of the detachable unit U3 is rotated to horizontally move the holding portion 32c to the covering means 14, and the covering means 14 is held by the holding portion 32c, so that the state similar to FIG. . In this state, the vertical portion 32b of the arm 32 is extended by the elevating cylinder 33a, and the covering means 14 is lifted upward to be detached from the semiconductor wafer W to obtain the same state as in FIG. Then, the arm 32 is rotated to retract the coating means 14 from above the semiconductor wafer W, and the semiconductor wafer W is recovered from the holding means 11 by the semiconductor wafer transfer robot U4 (FIG. 3A).

  When other processes such as a cleaning process with pure water are performed after the etching process, the semiconductor wafer W is positioned in another process space after the state of FIG. A processing liquid such as pure water or a processing gas may be supplied from the supply path. Alternatively, once the covering means 14 is detached, the semiconductor wafer W may be positioned again in another processing space and the subsequent processing may be performed. It is also possible to perform another process in another process space before the etching process. Thereby, a series of processes including the preceding and following processes can be performed continuously.

  5A and 5B are views showing the semiconductor wafer W after the etching process, in which FIG. 5A is a top view and FIG. 5B is a cross-sectional view thereof. The semiconductor wafer W after the etching process is formed with two regions w1 and w2 having different thicknesses. Although the thickness of the semiconductor wafer W before the etching process is uniform, when the covering means 14 is attached and the etching process is performed, the region w1 exposed by the opening 14a is corroded and becomes thin, and the contact of the covering means 14 is reduced. The thickness of the region w2 where the contact of the processing liquid or the processing gas is blocked by the surface 14d is not corroded. As a result, an annular convex portion w2 having a predetermined width along the outer periphery is formed at the outer peripheral end portion of the semiconductor wafer W.

  According to the etching processing apparatus S1 of the present embodiment, by attaching the covering means 14 to the semiconductor wafer W, the areas excluding the predetermined area can be corroded, so that (1) resist coating, ( Steps such as 2) exposure, (3) development, (4) etching, and (5) resist removal are unnecessary, and the etching process can be performed in a simple process. In addition, since it can be realized simply by adding the attaching / detaching function of the covering means 14 to the conventional single wafer processing apparatus, it is not necessary to prepare equipment corresponding to each of the processes (1) to (5). Costs can be reduced.

(Another example 1 of the first embodiment)
Another example 1 of the present embodiment differs from the first embodiment in the covering means. Note that the same portions as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted. FIG. 6 is a view showing the covering means 141 of the present embodiment, (a) a top view thereof, (b) a bottom view thereof, (c) a sectional view thereof, and (d) a drawing thereof. It is sectional drawing of the state which removed each member 14f and 14g. The covering means 141 includes a first member 14f and a second member 14g capable of detachably holding the first member 14f. The first member 14f has a ring shape and has an opening 14a at the center. The second member 14g has a ring shape and has an opening 14h (see FIG. 6D) in the center. The first member 14f can be inserted into the opening 14h of the second member 14g, and the notch 14i provided at the peripheral edge of the opening 14h of the second member 14g and the outer periphery of the first member 14f. When the provided notch 14j is fitted, the first member 14f is detachably locked to the second member 14g. In the mounted state, the contact surface 14d with the semiconductor wafer W formed by the first member 14f and the second member 14g is a flat surface, and the close contact with the semiconductor wafer W is not hindered.

  The covering unit 141 may be any member as long as the second member 14g covers at least a part of a predetermined area of the processing surface Wa of the workpiece W. For example, the part covering the predetermined region may be a part of the second member 14g, the entire second member 14g, or both the first member 14f and the second component 14g. There may be.

  According to the covering means 141, the etching pattern can be easily changed simply by replacing the first member 14f. For example, if a plurality of first members 14f having different sizes of the openings 14a are prepared in advance, the width of the convex portion w2 provided on the outer peripheral side of the semiconductor wafer W can be easily changed. The first member 14f is not limited to the ring shape, and may have various shapes according to the etching pattern.

(Other example 2 of the first embodiment)
Another example 2 of the present embodiment is different from the above-described embodiment in covering means, and the outer peripheral end 14k of the opening 14a is an inclined surface. Note that the same portions as those in the above embodiment are denoted by the same reference numerals and description thereof is omitted. FIG. 7 is a view showing an application example of the first embodiment, wherein (a) is a top view of the covering means 142 and (b) is a cross-sectional view thereof. FIGS. 8A and 8B are diagrams showing an application example of another example 1 of the first embodiment, in which FIG. 8A is a top view of the covering means 143, and FIG. 8B is a cross-sectional view thereof. The covering means 142 and 143 are inclined in a direction in which the peripheral edge portion 14k of the opening portion 14a extends outward from the contact surface 14d side with the processing surface Wa of the semiconductor wafer W.

  When the processing liquid or processing gas is supplied from the supply means 15, the processing liquid or processing gas flows in the direction of the peripheral edge 14 k of the opening 14 a due to the centrifugal force of rotation of the semiconductor wafer W. Since the peripheral edge portion 14k of the portion 14a is inclined in the direction in which the opening portion 14a expands from the contact surface 14d side toward the outside, the processing liquid or the processing gas is quickly retained without staying in the vicinity of the peripheral edge portion 14k. Discharged. Thereby, corrosion progresses uniformly in the region exposed at the opening 14a.

(Second embodiment)
FIG. 9 is a schematic cross-sectional view showing the internal structure of the etching processing apparatus S2 of the present embodiment. Note that the same parts as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.

  In the etching processing apparatus S2, a processing liquid or a processing gas is supplied from the holding table 14a side, and the lower surface of the wafer W is processed as the processing surface Wa. The supply means 15 of the present embodiment has a supply port on the upper surface of the holding table 14a. Supply means (supply paths) 15 (15a, 15b, 15c) communicating with the supply port are arranged in a space provided inside the rotating shaft 11d of the support portion 11b, and are connected to a supply source (not shown).

  The covering means 144 is provided on the upper surface of the holding table 11a. 10A and 10B are views showing the covering means 144. FIG. 10A is a top view of the holding table 11a provided with the covering means 144, and FIG. 10B is a cross-sectional view thereof. The covering means 144 is provided in a ring shape so as to surround the outer peripheral end of the semiconductor wafer W when the semiconductor wafer W is set. The covering means 144 has an L-shaped cross section, and the semiconductor wafer is disposed on the upper surface 14 d of the protruding portion protruding to the inner peripheral side, and the upper surface 14 d becomes the contact surface 14 d with the semiconductor wafer W. That is, the covering means 144 also has a function as the set portion 14c. The processing surface Wa of the semiconductor wafer W is covered with a predetermined region by the contact surface 14d, and the region corresponding to the central opening 14a is exposed.

  The covering means 144 is provided with a discharge path 14n penetrating from the inner peripheral surface to the outer peripheral surface at a predetermined interval between the contact surface 14d and the upper surface of the holding table 11a. The number, position, and size of the discharge passages 14n are arbitrary, but it is preferable that the processing liquid and the processing gas are discharged smoothly. The material of the covering means 144 is the same as that in the above embodiment.

  11A and 11B are views showing the fixing means 16, wherein FIG. 11A is a top view thereof, FIG. 11B is a bottom view thereof, and FIG. 11C is a sectional view thereof. The fixing means 16 is a lid-like body that fits with the covering means 144. The fixing means 16 is mounted so as to cover the covering means 144 in a state where the semiconductor wafer W is disposed, so that the semiconductor wafer W is sandwiched between the fixing means 16 and the covering means 144. A cutout portion 16a is formed on the outer peripheral surface of the fixing means 16, and the holding portion 32c of the arm 32 of the detachable unit U3 having the same mechanism as in the above embodiment can be fitted and held with the cutout portion 16a. It has become.

(Usage mode)
The etching processing apparatus S2 of the present embodiment operates as follows. 12A to 12C are schematic explanatory views for explaining the operation of the etching processing apparatus S2. The following operations are computer-controlled by a control unit (not shown). The operation similar to that of the above embodiment will be briefly described.

<Semiconductor wafer setting process>
FIG. 12A is an explanatory diagram for explaining a semiconductor wafer setting process. With the holding table 11a positioned outside the housing 21 through the opening 23a, the semiconductor wafer W is set on the covering means 144 by the semiconductor wafer transfer robot U4. As a result, the semiconductor wafer W is mounted on the covering means 114, and a predetermined area of the processing surface Wa of the semiconductor wafer W is covered with the contact surface 14 d of the covering means 144. Note that the arm of the semiconductor transfer robot U4 has a shape bent downward at the tip in order to avoid a collision with the covering means 144, and can hold the semiconductor wafer W by suction or the like.

<Semiconductor wafer fixing process>
FIG. 12B is an explanatory diagram for explaining the semiconductor wafer fixing step. With the semiconductor wafer W set on the covering means 144, the fixing means 16 is fitted to the covering means 144 by the detachable unit U3. Thereafter, the fixing means 16 is detached from the arm 32 of the detachable unit U3, and the arm 32 is retracted from above the semiconductor wafer W. As a result, the semiconductor wafer W is sandwiched and fixed between the fixing means 16 and the covering means 144.

<Etching process>
FIG. 12C is an explanatory diagram for explaining the etching process. The holding table 11a is lowered, and the semiconductor wafer W is positioned in the vicinity of the processing space 24b assigned to the etching process. Thereafter, while the semiconductor wafer W is rotated, an etching process liquid or process gas is supplied from the supply means 15. The processing liquid or the processing gas is supplied to the processing surface Wa of the semiconductor wafer W from the holding table 11a side. The surface Wa to be treated is corroded in an area exposed without being covered with the covering means 144 (area corresponding to the opening 14a), and is in contact with the area covered with the covering means 144 (that is, the contact surface 14d). In this region, the contact with the processing liquid or the processing gas is cut off and the surface Wa to be processed is etched in a predetermined pattern.

  The processing liquid or processing gas supplied from the supply means 15 is discharged through the discharge path 14n and discharged from the discharge port 24b by the centrifugal force generated by the rotation of the holding table 11a or the internal pressure generated by the supply. In the case of processing gas, it is preferable that the exhaust port 24b has an intake function.

<Post process>
When the etching process is completed, the rotation of the semiconductor wafer W and the supply of the processing liquid or processing gas are stopped, the holding table 11a is raised, the semiconductor wafer W is moved out of the housing 21, and the fixing means 16 is moved by the detachable unit U3. Holding and desorbing (see FIG. 12B), the wafer W is retracted from above. Thereafter, the semiconductor wafer W is recovered by the semiconductor wafer transfer robot U4 (see FIG. 12A).

(Another example 1 of the second embodiment)
13A and 13B are diagrams showing another example 1 of the present embodiment, in which FIG. 13A is a top view of the holding table 11a, and FIG. 13B is a sectional view thereof. Another example 1 of the present embodiment differs from the second embodiment in the covering means. The covering means 145 includes a first member 14f and a second member 14g that is detachable from the first member 14f. The first member 14f and the second component 14g have a ring shape, and are attached so that the second member 14g is fitted to the inner peripheral side of the first member 14f. The second member 14g is detachable, but is fixed to the holding table 11c by the fixing means 16 together with the semiconductor wafer W. In the attached state of the second member 14g, the contact surface 14d that contacts the wafer W is a flat surface. By preparing a plurality of types of second members 14g having different shapes, it is possible to perform etching in a desired pattern by appropriately replacing the second member 14g. The first member 14f and the second member 14g are provided with a discharge path 14n communicating with the first member 14f so that the discharge of the processing liquid or the processing gas is not hindered.

(Another example 2 of the second embodiment)
Another example 2 of the present embodiment is different from the above embodiment in covering means. FIG. 14 is a cross-sectional view of the holding table 11a provided with the covering means 146, 147, 148 according to another example 2 of the present embodiment, (a) is an application example of the second embodiment, (B) (c) is an application example of the other example 1 of the second embodiment. The covering means 146, 147, and 148 are inclined in a direction in which the peripheral edge portion 14k of the opening 14a spreads outward from the contact surface 14d side. As a result, the processing liquid and the processing gas are guided to the inclined surface 14k and are quickly discharged from the discharge path 14n. Since other configurations are the same as those in the above embodiment, the same reference numerals are used and description thereof is omitted.

(Third embodiment)
In the present embodiment, a lock mechanism 40 is provided in the first embodiment. FIG. 15 is an explanatory diagram for explaining the lock mechanism 40. 16A and 16B are views showing the covering means 149 constituting a part of the lock mechanism 40, wherein FIG. 16A is a top view thereof, FIG. 16B is a bottom view thereof, and FIG. 16C is a sectional view thereof. 17A is a view showing a holding table 11a constituting a part of the lock mechanism 40, FIG. 17A is a partially enlarged perspective view thereof, and FIG. 17B is a sectional view thereof. In addition, the description is abbreviate | omitted using the same code | symbol for the same part, and the chamber unit U2, detachable unit U3, and other detailed parts are also abbreviate | omitted also in drawing, and only the part required for description is extracted and demonstrated.

  The covering means 149 is provided with a plurality of projections 14p,..., 14p on the surface on the holding table 11a side, and a latching portion 14q protruding along the outer periphery is provided at the outer peripheral end.

  The holding table 11a is provided with an insertion hole 11d and a pressing means 11e in the vicinity of the set portion 11c, specifically, on the outer peripheral side of the set portion 11c. The insertion hole 11d is provided at a position where the projection 14p is inserted when the covering means 149 is disposed, and communicates with the working space 11f provided inside the holding table 11a. The holding means 11e is substantially L-shaped and is pivotally supported in the working space 11f so as to be swingable about the rotating shaft 11g. One side 11h protrudes from the opening 11i communicating with the working space 11f via the rotating shaft 11g, and is bent toward the side where the covering means 149 is disposed. The other side 11j is connected to the inner wall of the working space 11f by an expansion / contraction means 11k such as a spring or rubber via the rotating shaft 11g, and is biased in a direction to be drawn toward the inner wall.

  The lock mechanism 40 is realized by interlocking these configurations. FIG. 18 is an explanatory view for explaining the operation of the etching processing apparatus S3 provided with the lock mechanism 40. FIG. As shown in FIG. 18 (a), in a state where the covering means 149 is detached, the expansion / contraction means 11k is in a contracted state, the other side 11j of the pressing means 11e is drawn to the inner wall, and the one side 11h is located on the outer peripheral side. It is in a state.

  As shown in FIG. 18B, when the covering means 149 is mounted, each projection 14p is inserted into the insertion hole 11d, and the other side 11j of the pressing means 11e is pushed down. As a result, the holding means 11e swings about the rotating shaft 11g, and the one side 11h moves toward the covering means 149, and the hooking portion 14v of the covering means 149 is hooked.

  As shown in FIG. 18C, the holding means 32c of the detachable unit U3 is slid to the outer peripheral side to disengage the covering means 149 from the arm 32, and the setting of the covering means 149 is completed. Thereby, the lock mechanism 40 functions simultaneously with setting the covering means 149, and the covering means 149 is fixed to the holding means 11.

  In addition, although the above demonstrated the case where the lock mechanism 40 was applied to 1st embodiment, it is applicable similarly to 2nd Embodiment and 3rd Embodiment.

<Fourth embodiment>
In the present embodiment, an air supply means 50 for preventing the processing liquid from entering the first embodiment is provided. The semiconductor wafer W and the coating means 14 are basically in close contact with each other, but in some cases, a minute gap is formed, and the processing liquid may enter due to capillary action. Therefore, in the present embodiment, by providing the air supply means 50, the intrusion of the processing liquid due to this capillary phenomenon is surely prevented.

  FIG. 19A is a top view of the holding means 11, and FIG. 19B is a cross-sectional view thereof. The holding table 11a of the holding means 11 is provided with a set portion 11c having an L-shaped cross section in a ring shape, and a plurality of air supply ports 50a are provided at predetermined intervals on the inner peripheral surface of the set portion 11c. Yes. The air supply port 50a can discharge gas from a gas supply source (not shown) through an air supply path 50b arranged inside the holding means 11. The gas is not particularly limited, but may be any gas that does not affect the etching process, such as air or nitrogen gas.

  FIG. 20 is a view showing a state in which the semiconductor wafer W and the covering unit 14 are mounted on the holding unit 11. In the present embodiment, since the upper surface of the semiconductor wafer W is lower than the upper end of the set part 11c, the covering means 14 has a contact surface 14d projecting toward the wafer W in order to ensure adhesion with the semiconductor wafer W. It has a shape. The air supply port 50 a is located at a contact portion between the semiconductor wafer W and the covering means 14. When a minute gap is formed between the semiconductor wafer W and the covering means 14, the gas from the air supply port 50a is supplied to the gap. As a result, a gas flow is formed in the minute gap between the semiconductor wafer W and the coating means 14 from the outer peripheral side to the inner side, thereby preventing the processing liquid from entering.

  In the present embodiment, the covering means 14 has been described as an example in which the peripheral edge 14k of the opening 14a is an inclined surface as shown in FIGS. 7 and 8, but it is a vertical surface as shown in FIG. Alternatively, the first member and the second member may be used as shown in FIGS. 6 and 8. Further, as in the second embodiment (see FIG. 9), when supplying the processing liquid to the lower surface of the semiconductor wafer W, the air supply port 50a is provided in the covering means 144 as shown in FIG. Just do it.

  As described above, according to the etching processing apparatus of the present invention, etching with a desired etching pattern can be performed with very few processing steps. Various processing apparatuses such as resist coating, exposure, development, and resist removal are not necessary, and it is only necessary to add the coating means of the present invention to a conventional single-wafer processing apparatus, so that the equipment cost can be suppressed.

  In the above-described embodiment, a semiconductor wafer is used as an object to be processed. However, the present invention is not limited to this. Further, the etching pattern is not limited to the above embodiment, and various patterns can be appropriately designed as necessary. Further, the present invention is not limited to the above embodiment, and can be appropriately changed within the scope of the invention.

S1, S2, S3 Etching unit U1 Holding unit
U2 Chamber unit U3 Detachable unit U4 Semiconductor wafer transfer robot W Semiconductor wafer Wa Processed surface 11 Holding means 12 Rotating means 13 Elevating mechanism 14, 141-149 Covering means 15 Supply means 21 Housing 22 Partition 23 Moving space 24 Processing space 25 Discharge port 31 Base 32 Arm 33 Positioning mechanism 40 Lock mechanism 50 Air supply means

Claims (5)

Etching processing comprising holding means for holding an object to be processed such as a semiconductor wafer, supply means for supplying a processing liquid or processing gas for etching to the surface to be processed of the object to be processed, and rotating means for rotating the holding means In the device
It is detachable from the object to be processed, covers a predetermined area of the surface of the object to be processed while being attached to the object to be processed, and blocks contact of the processing liquid or processing gas in the predetermined area. An etching apparatus comprising a covering means for performing the etching process.   The said covering means is provided with the 1st member and the 2nd member which can be attached or detached to a 1st member, and a 2nd member coat | covers at least one part of the predetermined area | region of the said to-be-processed object. The etching processing apparatus according to 1.   The covering means has an opening that exposes the object to be processed when attached to the object to be processed, and the peripheral edge of the opening widens outward from the contact surface side with the object to be processed. The etching apparatus according to claim 1, wherein the etching apparatus is inclined in a direction.   In the state where the covering means is mounted on the object to be processed held by the holding means, an air supply means capable of supplying gas between the surface to be processed of the object to be processed and the covering means is provided. The etching processing apparatus according to any one of claims 1 to 3.   The etching processing apparatus according to claim 1, wherein the covering member includes an elastic body on a contact surface with the object to be processed.

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