KR20230079551A - Spin chuck pin mounted on cleaning equipment of wet pin chuck stage made of low-resistance SiC material - Google Patents
Spin chuck pin mounted on cleaning equipment of wet pin chuck stage made of low-resistance SiC material Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 44
- 238000004140 cleaning Methods 0.000 title claims abstract description 37
- 239000000126 substance Substances 0.000 claims description 4
- 230000005484 gravity Effects 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052799 carbon Inorganic materials 0.000 abstract description 13
- 230000005611 electricity Effects 0.000 abstract description 10
- 230000003068 static effect Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000004069 differentiation Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
본 발명은 저저항 SiC소재로 형성되는 습식 핀 척 스테이지의 세정장비에 장착되는 스핀 척 핀에 관한 것으로, 더욱 자세하게는, 스핀 척의 본연의 목적을 그대로 유지함과 동시에, 저항 SiC 소재로 구성되어 종래의 Carbon peek 소재 대비 물리적, 전기적 특성이 뛰어나 제품의 기존 정전기에 의한 아킹 문제 등을 해결할 수 있는 효과가 있고, 수명 역시 기존 소재 대비 약 5~6배 이상의 효과를 나타낼수 있으며, 일본 TOYO TANSO社와 IBIDEN社에서 수입하던 소재의 의존도를 낮출 수 있어 제조원가 측면, 납기 측면에서도 상당한 차별성을 가질 수 있는 유용한 발명이다.The present invention relates to a spin chuck pin made of a low-resistance SiC material and mounted in a cleaning equipment of a wet pin chuck stage. It has excellent physical and electrical properties compared to carbon peek material, so it has the effect of solving the problem of arcing caused by static electricity, and the lifespan can also be about 5 to 6 times more effective than existing materials. Japan's TOYO TANSO and IBIDEN It is a useful invention that can have significant differentiation in terms of manufacturing cost and delivery time as it can reduce the dependence on materials imported by the company.
Description
본 발명은 저저항 SiC소재로 형성되는 습식 핀 척 스테이지의 세정장비에 장착되는 스핀 척 핀에 관한 것으로, 더욱 자세하게는 저저항 SiC 소재로 형성된 환봉을 가공을 위한 지그에 장착하여, 황삭, 정삭 및 세정작업을 거쳐서 최적의 조건으로 가공하는 기술이다.The present invention relates to a spin chuck pin made of a low-resistance SiC material and mounted in cleaning equipment of a wet pin chuck stage. It is a technology that goes through cleaning work and processes it under optimal conditions.
통상적으로 습식 Spin chuck 세정 장비의 경우 상부의 Nozzle부에서 Micro 단위의 세정액을 분사하면 하부의 Spin chuck pin부에 올려진 Wafer 표면에 흡착되어있는 불순물이 Spin chuck의 회전에 의하여 불순물 세정이 이루어지는 원리로 진행되는데 이때 Wafer가 안착되는 Spin chuck pin의 경우 기존에 Carbon peek 소재로 전량 일본의 세정 장비 회사인 TEL社, DNS社에서 OEM 방식을 통한 제작으로 장비와 함께 수입되어 왔다.In general, in the case of wet spin chuck cleaning equipment, when a cleaning solution in micro units is sprayed from the upper nozzle part, impurities adsorbed on the surface of the wafer placed on the lower spin chuck pin part are cleaned by the rotation of the spin chuck. At this time, in the case of the spin chuck pin where the wafer is seated, all of them were previously made of carbon peek material and imported together with the equipment as manufactured through the OEM method by TEL and DNS, which are Japanese cleaning equipment companies.
이러한, 수명에 따른 교체 발생 시 국내 반도체 제조업체인 S社에서 OEM 방식으로 국내에서 수급을 하는 상황이었다. In the case of such replacement according to the lifespan, S company, a domestic semiconductor manufacturer, was in a situation where the supply was supplied in Korea through an OEM method.
하지만 이 역시도 Carbon peek 소재 자체를 순도 등의 문제로 인하여 일본의 TOYO TANSO社, 이비덴社에서 수입을 하여 가공함으로 많은 문제점을 앉고 있는 실정이다. However, this also has a lot of problems because the carbon peek material itself is imported from Japan's TOYO TANSO and Ibiden due to problems such as purity.
한편, 현재 S社에서 가동 중인 장비 대수는 약 2,000대 정도로 파악되며, 대부분 세정 장비의 Spin chuck pin을 일본수입형 Carbon peek 소재 부품을 사용하고 있는 실정이다. On the other hand, the number of equipment currently in operation at company S is estimated to be about 2,000 units, and most of them use carbon peek material parts imported from Japan for spin chuck pins of cleaning equipment.
기존 제품의 경우 여러 가지 문제점을 가지고 있었는데 그중 가장 큰 문제점이 Wafer에는 치명적인 아킹을 발생시키는 정전기 문제이다. Carbon peek 소재의 경우 내열성, 내화학성, 내마모성, 기계가공성 등에서 우수한 성능을 가지고 있으나, Spin chuck 세정 장비의 경우 Wafer를 안착 후 회전에 의한 세정을 하기 때문에 소재 자체의 특성으로 인하여 정전기 문제가 지속적으로 발생이 되고 있는 상황이다. Existing products had several problems, but the biggest problem is the problem of static electricity that causes arcing that is fatal to wafers. Carbon peek material has excellent performance in terms of heat resistance, chemical resistance, abrasion resistance, machinability, etc. However, in the case of spin chuck cleaning equipment, static electricity problems continue to occur due to the characteristics of the material itself because it cleans by rotation after seating the wafer. This is the situation.
이에 근래에서는 수요처인 세메스에서는 일본 수출규제 문제가 발생하기 전부터 당사와 Spin chuck pin에 대한 개발의뢰 및 Feed-back을 하고 진행하고 있는 상황으로 현재 기존 제품의 분석 및 저저항 SiC 소재의 적합성에 대한 검토를 하고 있는 상태이며, 현재 Spin chuck pin에 사용되고 있는 Carbon peek 소재의 경우 다른 물리적, 전기적 특성은 뛰어나나 저항 자체가 높아 정전기에 의한 문제점이 가장 크게 이슈화가 되고 있어 업계에서는 시급히 해결해야 할 사안으로 대두되고 있다.In recent years, SEMES, a customer of demand, has been requesting development and feedback on spin chuck pins with us even before the Japanese export regulation problem arose, and is currently in the process of analyzing existing products and reviewing the suitability of low-resistance SiC materials. In the case of carbon peek material, which is currently used for spin chuck pins, other physical and electrical properties are excellent, but the resistance itself is high, so the problem caused by static electricity is the biggest issue, so it is emerging as an urgent issue in the industry. It is becoming.
따라서 본 발명의 목적은 정전기 발생을 억제 및 물리적, 전기적 특성이 뛰어난 저저항 SiC 소재로 형성된 환봉을 가공을 위한 지그에 장착하여, 황삭, 정삭 및 세정작업을 거쳐서 최적의 조건으로 가공하여, 종래의 카본 재질의 핀 대비 약 5~ 6배의 수명연장이 가능한 저저항 SiC소재로 형성되는 습식 핀 척 스테이지의 세정장비에 장착되는 스핀 척 핀을 제공함에 주안점을 두고 그 기술적 과제로 완성해낸 것이다.Therefore, an object of the present invention is to mount a round bar formed of a low-resistance SiC material that suppresses static electricity generation and has excellent physical and electrical properties to a jig for processing, and processes it under optimal conditions through roughing, finishing, and cleaning operations, It was completed as a technical task with a focus on providing a spin chuck pin mounted on the cleaning equipment of the wet pin chuck stage, which is formed of low-resistance SiC material that can extend lifespan by about 5 to 6 times compared to pins made of carbon material.
상기 목적을 달성하기 위한 기술적 사상으로서, 습식 핀 척 스테이지의 세정장비에 장착되는 스핀 척 핀에 있어서, 상기 핀은, SiC 소재로 형성되되, 구비된 지그에 상기 SiC소재의 환형의 봉을 안착시켜 고정한 후, 황삭, 정삭가공으로 핀의 형상으로 형성한 다음, 상기 핀을 분리시키고, 분리된 핀을 구비된 세정용 지그에 안착시켜 고정시킨 후, 구비된 세정조에 넣어 핀의 표면에 부착된 이물질을 제거하여 구성되어, 비중 2.9g/cm^3, 열전도율 140W/m.K, 인장력 270Mpm, 저항10^-1Ohmm, 동심도 3
본 발명에 따른 저저항 SiC소재로 형성되는 습식 핀 척 스테이지의 세정장비에 장착되는 스핀 척 핀에 의하면, 스핀 척의 본연의 목적을 그대로 유지함과 동시에, 저항 SiC 소재로 구성되어 종래의 Carbon peek 소재 대비 물리적, 전기적 특성이 뛰어나 제품의 기존 정전기에 의한 아킹 문제 등을 해결할 수 있는 효과가 있고, 수명 역시 기존 소재 대비 약 5~6배 이상의 효과를 나타낼수 있으며, 일본 TOYO TANSO社와 IBIDEN社에서 수입하던 소재의 의존도를 낮출 수 있어 제조원가 측면, 납기 측면에서도 상당한 차별성을 가질 수 있는 유용한 발명이다.According to the spin chuck pin mounted on the cleaning equipment of the wet pin chuck stage formed of the low-resistance SiC material according to the present invention, while maintaining the original purpose of the spin chuck, it is composed of the resistance SiC material, compared to the conventional carbon peek material. Excellent physical and electrical properties have the effect of resolving the arcing problem caused by the existing static electricity of the product, and the lifespan can also show about 5 to 6 times more effects than existing materials. It is a useful invention that can have significant differentiation in terms of manufacturing cost and delivery time as it can lower the dependence on materials.
도 1은 본 발명의 바람직한 실시 예를 나타내는 세정장치의 스핀 척
도 2는 본 발명의 바람직한 실시 예를 나타내는 세정장치의 스핀 척 핀
도 3은 본 발명의 바람직한 실시 예를 나타내는 도면
도 4은 본 발명의 스핀 척 핀의 정밀가공을 나타내는 도면1 is a spin chuck of a cleaning device showing a preferred embodiment of the present invention
2 is a spin chuck pin of a cleaning device showing a preferred embodiment of the present invention
3 is a view showing a preferred embodiment of the present invention
4 is a view showing the precision machining of the spin chuck pin of the present invention
이하, 첨부되는 도면과 관련하여 상기 목적을 달성하기 위한 본 발명의 바람직한 구성 및 작용에 대하여 도 1 내지 도 4를 참고로 하여 설명하면 다음과 같다.Hereinafter, a preferred configuration and operation of the present invention for achieving the above object will be described with reference to FIGS. 1 to 4 with reference to the accompanying drawings.
통상적으로 습식 Spin chuck 세정 장비의 경우 상부의 Nozzle부에서 Micro 단위의 세정액을 분사하면 하부의 Spin chuck pin부에 올려진 Wafer 표면에 흡착되어있는 불순물이 Spin chuck의 회전에 의하여 불순물 세정이 이루어지는 원리로 진행되는데 이때 Wafer가 안착되는 Spin chuck pin의 경우 기존에 Carbon peek 소재로 전량 일본의 세정 장비 회사인 TEL社, DNS社에서 OEM 방식을 통한 제작으로 장비와 함께 수입되어 왔다. In general, in the case of wet spin chuck cleaning equipment, when a cleaning solution in micro units is sprayed from the upper nozzle part, impurities adsorbed on the surface of the wafer placed on the lower spin chuck pin part are cleaned by the rotation of the spin chuck. At this time, in the case of the spin chuck pin where the wafer is seated, all of them were previously made of carbon peek material and imported together with the equipment as manufactured through the OEM method by TEL and DNS, which are Japanese cleaning equipment companies.
이러한, 수명에 따른 교체 발생 시 국내 반도체 제조업체인 S社에서 OEM 방식으로 국내에서 수급을 하는 상황이었다. In the case of such replacement according to the lifespan, S company, a domestic semiconductor manufacturer, was in a situation where the supply was supplied in Korea through an OEM method.
하지만 이 역시도 Carbon peek 소재 자체를 순도 등의 문제로 인하여 일본의 TOYO TANSO社, 이비덴社에서 수입을 하여 가공함으로 많은 문제점을 앉고 있는 실정이다. However, this also has a lot of problems because the carbon peek material itself is imported from Japan's TOYO TANSO and Ibiden due to problems such as purity.
한편, 현재 S社에서 가동 중인 장비 대수는 약 2,000대 정도로 파악되며, 대부분 세정 장비의 Spin chuck pin을 일본수입형 Carbon peek 소재 부품을 사용하고 있는 실정이다. On the other hand, the number of equipment currently in operation at company S is estimated to be about 2,000 units, and most of them use carbon peek material parts imported from Japan for spin chuck pins of cleaning equipment.
기존 제품의 경우 여러 가지 문제점을 가지고 있었는데 그중 가장 큰 문제점이 Wafer에는 치명적인 아킹을 발생시키는 정전기 문제이다. Carbon peek 소재의 경우 내열성, 내화학성, 내마모성, 기계가공성 등에서 우수한 성능을 가지고 있으나, Spin chuck 세정 장비의 경우 Wafer를 안착 후 회전에 의한 세정을 하기 때문에 소재 자체의 특성으로 인하여 정전기 문제가 지속적으로 발생이 되고 있는 상황이다. Existing products had several problems, but the biggest problem is the problem of static electricity that causes arcing that is fatal to wafers. Carbon peek material has excellent performance in terms of heat resistance, chemical resistance, abrasion resistance, machinability, etc. However, in the case of spin chuck cleaning equipment, static electricity problems continue to occur due to the characteristics of the material itself because it cleans by rotation after seating the wafer. This is the situation.
이에 근래에서는 수요처인 세메스에서는 일본 수출규제 문제가 발생하기 전부터 당사와 Spin chuck pin에 대한 개발의뢰 및 Feed-back을 하고 진행하고 있는 상황으로 현재 기존 제품의 분석 및 저저항 SiC 소재의 적합성에 대한 검토를 하고 있는 상태이며, 현재 Spin chuck pin에 사용되고 있는 Carbon peek 소재의 경우 다른 물리적, 전기적 특성은 뛰어나나 저항 자체가 높아 정전기에 의한 문제점이 가장 크게 이슈화가 되고 있어 업계에서는 시급히 해결해야 할 사안으로 대두되고 있다. In recent years, SEMES, a customer of demand, has been requesting development and feedback on spin chuck pins with us even before the Japanese export regulation problem arose, and is currently in the process of analyzing existing products and reviewing the suitability of low-resistance SiC materials. In the case of carbon peek material, which is currently used for spin chuck pins, other physical and electrical properties are excellent, but the resistance itself is high, so the problem caused by static electricity is the biggest issue, so it is emerging as an urgent issue in the industry. It is becoming.
이에 본 발명은, 저저항 SiC소재로 형성되는 습식 핀 척 스테이지의 세정장비에 장착되는 스핀 척 핀에 관한 것으로, 더욱 자세하게는 저저항 SiC 소재로 형성된 환봉을 가공을 위한 지그에 장착하여, 황삭, 정삭 및 세정작업을 거쳐서 최적의 조건으로 가공하는 기술이다. Accordingly, the present invention relates to a spin chuck pin made of a low-resistance SiC material and mounted in a cleaning equipment of a wet pin chuck stage. More specifically, a round bar made of a low-resistance SiC material is mounted on a jig for processing, It is a technology that processes in optimal conditions through finishing and cleaning operations.
우선 제조장법을 보면, 습식 핀 척 스테이지의 세정장비에 장착되는 스핀 척 핀에 있어서, 상기 핀은, SiC 소재로 형성되되, 구비된 지그에 상기 SiC소재의 환형의 봉을 안착시켜 고정한 후, 황삭, 정삭가공으로 핀의 형상으로 형성한 다음, 상기 핀을 분리시키고, 분리된 핀을 구비된 세정용 지그에 안착시켜 고정시킨 후, 구비된 세정조에 넣어 핀의 표면에 부착된 이물질을 제거하여 구성되어, 비중 2.9g/cm^3, 열전도율 140W/m.K, 인장력 270Mpm, 저항10^-1Ohmm, 동심도 3
이를 더욱 상세하게 설명하면, 먼저, 종래의 카본소재와 본 발명의 SiC소재의 성분 분석을 통해 문제점을 검토하고, SEM&EDAX 분석을 통해 소재의 물성과 성분의 특성을 분석한다. To explain this in more detail, first, problems are reviewed through component analysis of the conventional carbon material and the SiC material of the present invention, and the physical properties and component characteristics of the material are analyzed through SEM & EDAX analysis.
그 후에는 분석된 자료를 토대로 가공조건 검토 및 기본 백 데이터로 활용한다. After that, based on the analyzed data, processing conditions are reviewed and used as basic bag data.
한편, 상기 백데이터를 통해 시험 시편 제작 및 가공을 통한 가공 경향을 분석한다. On the other hand, through the back data, the processing tendency through the production and processing of the test specimen is analyzed.
그 후 레진 휠을 이용한 RPM, 절입량, Feed 조건 변경을 통해 SiC 원통(환형)조건을 검토한 다음, 황삭, 정삭 조건별 소재 측정 부위 선정 및 최적 조건 확립과, 전착 공구 규격에 따른 가공 경향을 분석하여 필요에 따라 수정한다. After that, the condition of the SiC cylinder (annular shape) is reviewed by changing the RPM, depth of cut, and feed conditions using a resin wheel. Analyze and correct as needed.
그 후, 스핀 척 핀의 표면 데미지 최소화를 위하여 별도의 구비된 지그를 이용하여 고정하고 황삭 및 정삭가공을 수행한다. Then, in order to minimize surface damage of the spin chuck pin, it is fixed using a jig provided separately, and roughing and finishing are performed.
또한, 스핀 척 핀 고정부 홀 가공 및 카운트 보어 가공기술을 통해 상기 고정부 홀의 안정적인 가공을 하고, 전용 메탈 Tool을 이용하여 상기 홀 표면품위 향상 및 치수정밀도 향상시킬 수 있도록 하며, 상기 홀 확장형 공구 적용 및 Step drilling 적용으로 고정밀 Hole 구현할 수 있도록 한다. In addition, through spin chuck pin fixing hole processing and count bore processing technology, the fixing hole is stably processed, and the hole surface quality and dimensional accuracy can be improved using a dedicated metal tool, and the hole expansion type tool is applied And by applying step drilling, high-precision hole can be realized.
또한, 공구의 마모측정으로 최적 공구를 통해 불량률 억제를 위해 필요에 따라 적절하게 교체하여 사용하고, 상기 홀 체결부의 정밀도 및 신뢰성 향상을 위하여 측정 백데이터로 활용한다. In addition, the wear measurement of the tool is used by replacing it appropriately as necessary to suppress the defect rate through the optimal tool, and is used as measurement back data to improve the accuracy and reliability of the hole fastening part.
상기한 바와 같이 황삭, 정삭 가공이 완료된 스핀 척 핀은 전용 세정조에 넣어 세정하되, 구비된 세정용 지그에 고정시킨 다음 상기 세정조에 넣어 세정하되, 세정액의 오염도 분석 및 세정 후 외관에 반점, 재흡착 및 재오염 유발 억제를 위해 세정에 가장 적합한 세정액을 사용한다. As described above, the spin chuck pin that has been subjected to roughing and finishing processing is put into a dedicated cleaning tank to be cleaned, fixed to a cleaning jig, and then put into the cleaning tank to be cleaned. and the most suitable cleaning solution for cleaning is used to suppress recontamination.
본 발명에 따른 저저항 SiC소재로 형성되는 습식 핀 척 스테이지의 세정장비에 장착되는 스핀 척 핀에 의하면, 스핀 척의 본연의 목적을 그대로 유지함과 동시에, 저항 SiC 소재로 구성되어 종래의 Carbon peek 소재 대비 물리적, 전기적 특성이 뛰어나 제품의 기존 정전기에 의한 아킹 문제 등을 해결할 수 있는 효과가 있고, 수명 역시 기존 소재 대비 약 5~6배 이상의 효과를 나타낼수 있으며, 일본 TOYO TANSO社와 IBIDEN社에서 수입하던 소재의 의존도를 낮출 수 있어 제조원가 측면, 납기 측면에서도 상당한 차별성을 가질 수 있는 유용한 발명이다.According to the spin chuck pin mounted on the cleaning equipment of the wet pin chuck stage formed of the low-resistance SiC material according to the present invention, while maintaining the original purpose of the spin chuck, it is composed of the resistance SiC material, compared to the conventional carbon peek material. It has excellent physical and electrical properties, so it has the effect of solving the problem of arcing caused by static electricity, etc., and the lifespan can also show about 5 to 6 times more effects than existing materials. It is a useful invention that can have significant differentiation in terms of manufacturing cost and delivery time as it can lower the dependence on materials.
Claims (1)
상기 핀은, SiC 소재로 형성되되, 구비된 지그에 상기 SiC소재의 환형의 봉을 안착시켜 고정한 후, 황삭, 정삭가공으로 핀의 형상으로 형성한 다음, 상기 핀을 분리시키고,
분리된 핀을 구비된 세정용 지그에 안착시켜 고정시킨 후, 구비된 세정조에 넣어 핀의 표면에 부착된 이물질을 제거하여 구성되어,
비중 2.9g/cm^3, 열전도율 140W/m.K, 인장력 270Mpm, 저항10^-1Ohmm, 동심도 3
The pin is made of a SiC material, after fixing the annular rod of the SiC material to a jig provided, forming it into a pin shape by roughing and finishing, then separating the pin,
After the separated pin is seated and fixed on the provided cleaning jig, it is configured by putting it in the provided cleaning tank to remove foreign substances attached to the surface of the pin,
Specific gravity 2.9g/cm^3, thermal conductivity 140W/mK, tensile force 270Mpm, resistance 10^-1Ohmm, concentricity 3
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100820190B1 (en) | 2006-11-21 | 2008-04-07 | (주)이노맥스 | Spin chuck |
| KR100927118B1 (en) | 2007-09-12 | 2009-11-18 | 세메스 주식회사 | Spin chuck and wafer processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100820190B1 (en) | 2006-11-21 | 2008-04-07 | (주)이노맥스 | Spin chuck |
| KR100927118B1 (en) | 2007-09-12 | 2009-11-18 | 세메스 주식회사 | Spin chuck and wafer processing method |
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