KR20060064980A - 주파수 혼합기 - Google Patents
주파수 혼합기 Download PDFInfo
- Publication number
- KR20060064980A KR20060064980A KR1020040103679A KR20040103679A KR20060064980A KR 20060064980 A KR20060064980 A KR 20060064980A KR 1020040103679 A KR1020040103679 A KR 1020040103679A KR 20040103679 A KR20040103679 A KR 20040103679A KR 20060064980 A KR20060064980 A KR 20060064980A
- Authority
- KR
- South Korea
- Prior art keywords
- field effect
- effect transistor
- signal
- terminal
- drain
- Prior art date
Links
- 230000005669 field effect Effects 0.000 claims abstract description 54
- 239000003990 capacitor Substances 0.000 claims description 7
- 238000003780 insertion Methods 0.000 abstract description 6
- 230000037431 insertion Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0043—Bias and operating point
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0066—Mixing
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0084—Lowering the supply voltage and saving power
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Superheterodyne Receivers (AREA)
Abstract
Description
Claims (5)
- 소오스 단자가 접지되는 전계효과 트랜지스터;상기 전계효과 트랜지스터의 드레인 단자에 연결되어 LO 신호를 제공받아 소정의 LO 주파수 대역의 신호를 상기 전계효과 트랜지스터에 제공하기 위한 LO 정합부;상기 전계효과 트랜지스터의 게이트 단자에 연결되어 RF 신호를 제공받아 소정의 RF 대역의 신호를 상기 전계효과 트랜지스터에 제공하기 위한 RF 정합부;상기 전계효과 트랜지스터의 게이트 단자에 연결되어 DC 바이어스를 공급하기 위한 게이트 바이어스부;상기 전계효과 트랜지스터의 드레인 단자에 연결되어 DC 바이어스를 공급하기 위한 드레인 바이어스부; 및상기 전계효과 트랜지스터의 드레인 단자에 연결되어 상기 LO 신호와 상기 RF 신호가 혼합된 IF 신호를 제공받아 소정의 IF 대역의 신호를 출력단자에 출력하기 위한 IF 정합부를 포함하여 이루어진 주파수 혼합기.
- 제 1 항에 있어서, 상기 게이트 바이어스부는 적어도 하나의 리액턴스와 캐패시터로 이루어진 것을 특징으로 하는 주파수 혼합기.
- 제 1 항에 있어서, 상기 드레인 바이어스부는 적어도 하나의 저항 및 캐패시 터로 이루어지되, 상기 전계효과 트랜지스터의 드레인 단자와 상기 IF 정합부의 사이에 연결되며 접지되는 것을 특징으로 하는 주파수 혼합기.
- 제 3 항에 있어서, 상기 드레인 바이어스부의 접지는 상기 전계효과 트랜지스터에 연결되는 것을 특징으로 하는 주파수 혼합기.
- 제 1 항에 있어서, 상기 IF 정합부는 상기 LO 정합부와 상기 출력단자의 사이에 접속되는 것을 특징으로 하는 주파수 혼합기.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040103679A KR100668365B1 (ko) | 2004-12-09 | 2004-12-09 | 주파수 혼합기 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040103679A KR100668365B1 (ko) | 2004-12-09 | 2004-12-09 | 주파수 혼합기 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060064980A true KR20060064980A (ko) | 2006-06-14 |
KR100668365B1 KR100668365B1 (ko) | 2007-01-16 |
Family
ID=37160327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040103679A KR100668365B1 (ko) | 2004-12-09 | 2004-12-09 | 주파수 혼합기 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100668365B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8183896B2 (en) | 2008-01-16 | 2012-05-22 | Korea Advanced Institute Of Science And Technology (Kaist) | Resistive frequency mixing apparatus and signal processing method using the same |
US8845143B2 (en) | 2007-10-29 | 2014-09-30 | Epistar Corporation | Photoelectronic device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11817826B2 (en) | 2021-11-08 | 2023-11-14 | Electronics And Telecommunications Research Institute | Frequency mixer including non-linear circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0246009A (ja) * | 1988-08-08 | 1990-02-15 | Sharp Corp | Fetミキサ |
JPH07273557A (ja) * | 1994-03-29 | 1995-10-20 | Nippon Telegr & Teleph Corp <Ntt> | 周波数変換回路 |
JPH09214253A (ja) * | 1996-02-06 | 1997-08-15 | Advantest Corp | ハーモニックミキサ |
-
2004
- 2004-12-09 KR KR1020040103679A patent/KR100668365B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8845143B2 (en) | 2007-10-29 | 2014-09-30 | Epistar Corporation | Photoelectronic device |
US8183896B2 (en) | 2008-01-16 | 2012-05-22 | Korea Advanced Institute Of Science And Technology (Kaist) | Resistive frequency mixing apparatus and signal processing method using the same |
Also Published As
Publication number | Publication date |
---|---|
KR100668365B1 (ko) | 2007-01-16 |
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