KR20060043931A - 반도체 패키지 제조 방법 - Google Patents
반도체 패키지 제조 방법 Download PDFInfo
- Publication number
- KR20060043931A KR20060043931A KR1020040091667A KR20040091667A KR20060043931A KR 20060043931 A KR20060043931 A KR 20060043931A KR 1020040091667 A KR1020040091667 A KR 1020040091667A KR 20040091667 A KR20040091667 A KR 20040091667A KR 20060043931 A KR20060043931 A KR 20060043931A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor package
- printed circuit
- circuit board
- grid array
- coating layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 20
- 229910000679 solder Inorganic materials 0.000 claims abstract description 26
- 239000011247 coating layer Substances 0.000 claims abstract description 21
- 239000012528 membrane Substances 0.000 claims abstract description 11
- 229920000642 polymer Polymers 0.000 claims abstract description 11
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 9
- 239000011737 fluorine Substances 0.000 claims abstract description 9
- 230000004927 fusion Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 4
- 238000003618 dip coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (4)
- 인쇄회로기판의 칩탑재부에 반도체 칩을 실장하는 단계, 반도체 칩과 인쇄회로기판의 전도성 회로패턴을 와이어로 연결하는 단계, 반도체 칩과 와이어 등을 봉지재로 감싸주는 단계, 인쇄회로기판의 저면에 다수의 솔더볼을 융착하는 단계 등을 포함하는 볼 그리드 어레이 반도체 패키지의 제조 방법에 있어서,상기 볼 그리드 어레이 반도체 패키지의 전체 표면에 코팅층을 형성하는 단계가 상기 솔더볼을 융착하는 단계 전에 더 진행되는 것을 특징으로 하는 반도체 패키지의 제조 방법.
- 청구항 1에 있어서, 상기 코팅층의 형성 단계는 딥 코팅(Dip coating) 또는 스프레이 코팅(Spray coating) 방법으로 진행되는 것을 특징으로 하는 반도체 패키지의 제조 방법.
- 청구항 1 또는 2에 있어서, 상기 코팅층의 형성 단계후, 솔더볼을 융착하는 단계에서 솔더볼을 융착되는 부분의 코팅층이 플라즈마(PLASMA) 에칭 공정에 의하여 식각되는 것을 특징으로 하는 반도체 패키지의 제조 방법.
- 청구항 1에 있어서, 상기 코팅층은 다공성의 멤브레인 또는 불소계 고분자인 것을 특징으로 하는 반도체 패키지의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20040091667A KR100662202B1 (ko) | 2004-11-11 | 2004-11-11 | 반도체 패키지 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20040091667A KR100662202B1 (ko) | 2004-11-11 | 2004-11-11 | 반도체 패키지 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060043931A true KR20060043931A (ko) | 2006-05-16 |
KR100662202B1 KR100662202B1 (ko) | 2006-12-27 |
Family
ID=37148803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20040091667A KR100662202B1 (ko) | 2004-11-11 | 2004-11-11 | 반도체 패키지 제조 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100662202B1 (ko) |
-
2004
- 2004-11-11 KR KR20040091667A patent/KR100662202B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100662202B1 (ko) | 2006-12-27 |
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