KR20060020002A - 엘씨 공진기를 이용한 전압제어발진기 - Google Patents
엘씨 공진기를 이용한 전압제어발진기 Download PDFInfo
- Publication number
- KR20060020002A KR20060020002A KR1020040068721A KR20040068721A KR20060020002A KR 20060020002 A KR20060020002 A KR 20060020002A KR 1020040068721 A KR1020040068721 A KR 1020040068721A KR 20040068721 A KR20040068721 A KR 20040068721A KR 20060020002 A KR20060020002 A KR 20060020002A
- Authority
- KR
- South Korea
- Prior art keywords
- harmonic
- resonator
- voltage controlled
- controlled oscillator
- resonant circuit
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
Claims (5)
- 두 개의 직렬 연결된 배랙터 다이오우드들과 인덕터가 병렬로 연결된 제 1 공진 회로;하나 이상의 인덕터(L1)와 하나 이상의 커패시터(C1)가 병렬 구성된 것을 포함하며 상기 제 1 공진회로의 한 쪽 단자와 직렬로 연결된 제 2 공진회로;하나 이상의 인덕터(L2)와 하나 이상의 커패시터(C2)가 병렬 구성된 것을 포함하며 상기 제 1 공진회로의 다른 쪽 단자와 직렬로 연결된 제 3 공진회로;를 포함하는 것을 특징으로 하는 엘씨(LC) 공진 회로를 이용한 전압제어발진기.
- 인덕터와 커패시터의 병렬연결로 구성된 LC 공진기를 이용하는 전압제어발진기에 있어서,발진 주파수와 세 번째 고조파에서 개방(open), 두 번째 고조파에서 단락(short)의 특성을 가지고 경사가 급한 기울기를 갖도록 발진기의 출력 전압 파형을 변형시키는 고조파 튜닝된 엘씨(LC) 공진 회로를 포함하는 것을 특징으로 하는 전압제어발진기.
- 제 2항에 있어서, 상기 고조파 튜닝된 엘씨(LC) 공진회로는발진주파수의 공진회로, 일반 엘씨(LC) 공진 회로 및 세 번째 고조파 공진회로가 직렬연결로 이루어짐을 특징으로 하는 엘씨(LC) 공진 회로를 이용한 전압제어 발진기.
- 제 1항 또는 제 2항에 있어서, 상기 전압제어발진기는 두 쌍의 크로스 커플(cross couple)된 래치 회로를 포함하는 것을 특징으로 하는 엘씨(LC) 공진 회로를 이용한 전압제어발진기.
- 제 1항 또는 제 2항에 있어서, 상기 전압제어발진기의 전류공급은 전류미러(current mirror) 회로에 의해 이루어지는 것을 특징으로 하는 엘씨(LC) 공진 회로를 이용한 전압제어발진기.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040068721A KR100572128B1 (ko) | 2004-08-30 | 2004-08-30 | 엘씨 공진기를 이용한 전압제어발진기 |
US11/574,041 US7609120B2 (en) | 2004-08-30 | 2005-08-26 | Voltage-controlled oscillator using LC resonator |
PCT/KR2005/002823 WO2006025670A1 (en) | 2004-08-30 | 2005-08-26 | Voltage-controlled oscillator using lc resonator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040068721A KR100572128B1 (ko) | 2004-08-30 | 2004-08-30 | 엘씨 공진기를 이용한 전압제어발진기 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060020002A true KR20060020002A (ko) | 2006-03-06 |
KR100572128B1 KR100572128B1 (ko) | 2006-04-18 |
Family
ID=36000284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040068721A KR100572128B1 (ko) | 2004-08-30 | 2004-08-30 | 엘씨 공진기를 이용한 전압제어발진기 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7609120B2 (ko) |
KR (1) | KR100572128B1 (ko) |
WO (1) | WO2006025670A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7755440B2 (en) | 2007-01-08 | 2010-07-13 | Samsung Electronics Co., Ltd. | Voltage controlled oscillator for controlling phase noise and method using the same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8644773B2 (en) * | 2009-12-10 | 2014-02-04 | Skyworks Solutions, Inc. | Multiband low noise amplifier (LNA) with parallel resonant feedback |
US10425038B2 (en) * | 2015-10-14 | 2019-09-24 | Mediatek Inc. | LC-tank oscillator having intrinsic low-pass filter |
CN107403988A (zh) * | 2016-05-20 | 2017-11-28 | 鸿富锦精密工业(深圳)有限公司 | 功率分配电路及应用所述功率分配电路的功率分配器 |
US10855224B2 (en) | 2019-03-29 | 2020-12-01 | Intel Corporation | Magnetically decoupled concentric coils structure for area optimized high performance LC VCOs |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910003172Y1 (ko) * | 1988-06-28 | 1991-05-13 | 삼성전기 주식회사 | 유선 tv 튜너의 입력필터회로 |
JPH07176952A (ja) * | 1993-12-20 | 1995-07-14 | Sony Corp | 発振器 |
US6204734B1 (en) * | 2000-02-03 | 2001-03-20 | Conexant Systems, Inc. | Method and apparatus for extending a VCO tuning range |
JP2002208819A (ja) * | 2001-01-05 | 2002-07-26 | Tdk Corp | 発振回路 |
JP2003204219A (ja) * | 2002-01-09 | 2003-07-18 | Mitsubishi Electric Corp | 発振器 |
JP2003229718A (ja) * | 2002-02-01 | 2003-08-15 | Nec Electronics Corp | 電圧制御発振器 |
JP3892383B2 (ja) * | 2002-10-15 | 2007-03-14 | Necエレクトロニクス株式会社 | 電圧制御発振器 |
-
2004
- 2004-08-30 KR KR1020040068721A patent/KR100572128B1/ko active IP Right Grant
-
2005
- 2005-08-26 US US11/574,041 patent/US7609120B2/en not_active Expired - Fee Related
- 2005-08-26 WO PCT/KR2005/002823 patent/WO2006025670A1/en active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7755440B2 (en) | 2007-01-08 | 2010-07-13 | Samsung Electronics Co., Ltd. | Voltage controlled oscillator for controlling phase noise and method using the same |
Also Published As
Publication number | Publication date |
---|---|
US7609120B2 (en) | 2009-10-27 |
WO2006025670A8 (en) | 2006-04-13 |
US20090051453A1 (en) | 2009-02-26 |
KR100572128B1 (ko) | 2006-04-18 |
WO2006025670A1 (en) | 2006-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7652541B2 (en) | Dual-mode voltage-controlled oscillator | |
US6927640B2 (en) | Apparatus and method for reducing phase noise in oscillator circuits | |
US20080111642A1 (en) | Apparatus and methods for vco linearization | |
Xue et al. | Novel oscillator incorporating a compact microstrip resonant cell | |
Chun et al. | Design of an RF low-noise bandpass filter using active capacitance circuit | |
Wang et al. | Phase-Noise Reduction of $ X $-Band Push–Push Oscillator With Second-Harmonic Self-Injection Techniques | |
US7609120B2 (en) | Voltage-controlled oscillator using LC resonator | |
Lee et al. | High-Q active resonators using amplifiers and their applications to low phase-noise free-running and voltage-controlled oscillators | |
US20110133849A1 (en) | Low phase noise voltage-controlled oscillator (vco) using high quality factor metamaterial transmission lines | |
Jahn et al. | A 122-GHz SiGe-based signal-generation chip employing a fundamental-wave oscillator with capacitive feedback frequency-enhancement | |
JPS62252206A (ja) | 周波数逓倍型電圧制御発振器 | |
US6737929B1 (en) | Hybrid n+ and p+ gate-doped voltage variable capacitors to improve linear tuning range in voltage controlled oscillators | |
Hsieh et al. | A V-band CMOS VCO with an admittance-transforming cross-coupled pair | |
KR101481467B1 (ko) | 직렬 lc 공진회로를 가지는 저위상잡음 cmos 전압제어 발진기 | |
US20050017813A1 (en) | Low supply-sensitive and wide tuning-range CMOS LC-tank voltage-controlled oscillator monolithic integrated circuit | |
Wu et al. | An L-band low phase noise evanescent-mode cavity-based frequency synthesizer | |
Lai | Design of 1V CMOS 5.8 GHz VCO with switched capacitor array tuning for intelligent sensor fusion | |
Mostafa et al. | A fully integrated sub-1 V 4 GHz CMOS VCO, and a 10.5 GHz oscillator | |
Shirazi et al. | Design of VCO with a differential tunable active inductor | |
Mostafa et al. | CMOS 5-10 GHz oscillators for low voltage RF Applications | |
EP1898520B1 (en) | Voltage controlled oscillator with lc resonator circuit | |
Ghonoodi et al. | A Dual-Band Low Noise Low Power Local LC Oscillator. | |
Vora et al. | Noise power optimization of monolithic CMOS VCOs | |
KR101088445B1 (ko) | 전압 제어 발진기 | |
Son et al. | A Widely Tunable K-band Voltage-Controlled Oscillator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
A302 | Request for accelerated examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130410 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140403 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160411 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170410 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180322 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20190401 Year of fee payment: 14 |