KR20060019978A - Liquid crystal display device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device. In particular, in forming a multi-layer constituting a liquid crystal display device, a multi-layered pattern structure in which a pattern is changed by bending some outer lines of a lower layer among a plurality of layers constituting the multi-layer layer It relates to a liquid crystal display device.

LCD, Multi-layered Pattern Structure, Multi-Layer, Lower Layer, Pattern, Bending

Description

Liquid crystal display device {LIQUID CRYSTAL DISPLAY DEVICE}

1 is a view showing a conventional polysilicon liquid crystal display device.

2a to 2d are views illustrating the bending structure of the layer according to the present invention.

3 is a view showing a polysilicon liquid crystal display device according to the present invention.

4A to 4D are views illustrating a manufacturing process of a liquid crystal display device according to the present invention.

5 illustrates another embodiment of the present invention.

*** Explanation of symbols for main parts of drawing ***

105 and 305: semiconductor layers 105a and 305a: storage lower electrodes

111, 311: storage upper electrodes 101a, 301a, 301b: gate electrodes

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device having a multi-layered pattern structure in which some outer lines of a lower layer of the multiple layers constituting the liquid crystal display device are bent and patterned.

Recently, with the development of various portable electronic devices such as mobile phones, PDAs, and notebook computers, there is a growing demand for flat panel display devices for light and thin applications. Such flat panel displays are being actively researched, such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel), FED (Field Emission Display), VFD (Vacuum Fluorescent Display), but mass production technology, ease of driving means, Liquid crystal display devices (LCDs) are in the spotlight for reasons of implementation.

In general, the liquid crystal display device is composed of a first substrate and a second substrate and a liquid crystal layer formed therebetween. The first substrate is a thin film transistor substrate on which a switching element such as a thin film transistor and a pixel electrode are formed, and the second substrate is a color filter substrate on which a color filter layer and a common electrode are formed. In addition, a driving circuit unit is provided on a side surface of the first substrate to apply a signal to the thin film transistor, the pixel electrode, and the common electrode formed on the first substrate, respectively.

In the liquid crystal display device configured as described above, the liquid crystal molecules of the liquid crystal layer formed between the second substrate and the first substrate drive the liquid crystal molecules by a signal applied through the thin film transistor formed on the first substrate to transmit the liquid crystal layer. Information is displayed by controlling.

Liquid crystal display devices have various display modes according to the arrangement of thin and long liquid crystal molecules. Among them, TN (Twisted Nematic) mode liquid crystal display devices having advantages of easy black and white display, fast response speed and low driving voltage are mainly used. have. However, in the TN method, since the liquid crystal molecules are vertically oriented by an electric field applied up and down, there is a disadvantage that the viewing angle characteristics are not excellent due to the refractive anisotropy of the liquid crystal molecules. Therefore, in order to overcome the above disadvantage, a new technology, i.e., an IPS (in plain switching) mode liquid crystal display, has recently been proposed.

The IPS mode liquid crystal display device is a liquid crystal display device that secures a wide viewing angle characteristic as compared to the conventional TN mode liquid crystal display device by forming a transverse electric field on the plane when the voltage is applied to align the liquid crystal molecules in the plane.

The liquid crystal display device is further classified into an amorphous silicon liquid crystal display device and a polycrystalline silicon liquid crystal display device according to the components constituting the semiconductor layer.

Until now, the thin film transistor has been generally formed using an amorphous silicon layer, which has a disadvantage in that it is difficult to apply to manufacturing a large screen thin film transistor liquid crystal display device because of its low mobility. Therefore, in recent years, the research on the polysilicon thin film transistor using the polysilicon layer excellent in mobility is active. Such a polysilicon thin film transistor can be easily applied to the fabrication of a large screen liquid crystal display device, and also has an advantage of excellent integration and cost competitiveness since the driving circuit unit can be integrated together in the thin film transistor array substrate.

The first substrate of the liquid crystal display device configured as described above is manufactured through a plurality of mask processes, and the configuration of the conventional liquid crystal display device will be described in detail with reference to the drawings.

FIG. 1 is a plan view illustrating unit pixels of a polysilicon liquid crystal display device as an example of a conventional liquid crystal display device. As shown in the drawing, the gate lines 101 and the data arranged vertically and horizontally on the transparent first substrate 110 are shown. The pixel region is defined by the line 103, and the thin film transistor 109 is formed near the intersection point of the gate line 101 and the data line 103.

The thin film transistor 109 includes a gate electrode 101a formed by extending a portion of the gate layer 101 and the semiconductor layer 105 formed in an island form by patterning polysilicon through a first mask process. The source / drain electrodes 102a and 102b are disposed to be spaced apart by a predetermined interval with the gate electrode 101a therebetween.

In this case, the source electrode 102a receives a signal from the data line 103 through the first contact hole 107a, and the drain electrode 102b receives a signal through the second contact hole 107b. It is electrically connected to the pixel electrode 120 through the third contact hole 107c.

Meanwhile, the storage lower electrode 105a formed by extending the semiconductor layer 105 overlaps the storage upper electrode 111 formed of the same material as the gate line 101 with an insulating layer therebetween to form a storage capacity. .

However, in the conventional liquid crystal display device as described above, as shown in the storage formation region of FIG. 1, the step is severely generated while the electrodes overlap on the first substrate in a double, triple or quadruple form a multi-layer. There is a problem.

Such a step may cause various problems in the liquid crystal display device. In particular, the step is directly connected to the cause of the disconnection of the layer formed on the upper layer in the etching process using an etchant during the mask process of the manufacturing process. In other words, when the photoresist film is applied on the substrate on which the etch target layer is formed to perform the mask process, the photoresist film is not closely adhered to the step portion generated by the electrodes already formed at the lower portion thereof, and a little space is excited. Phenomenon occurs. Lifting of the photoresist film causes the penetration of the etchant along the gap of the step portion (ie, the gap between the etching target layer and the photoresist film) during the etching process, thereby etching the upper layer, so that the shape of the layer is accurately patterned. There was a possibility of disconnection in some cases.

In particular, in the polysilicon liquid crystal display device, when the electrode is formed on the semiconductor layer formed of the polysilicon, the crystallization traces of the semiconductor layer made of the polycrystalline silicon intensify the step, causing the upper layer to be disconnected.

In order to solve the problems as described above, the present invention, the first pattern of the at least one layer formed on the substrate and the outer line which is located below the first pattern, overlapping the first pattern is bent An object of the present invention is to provide a multi-layered pattern structure composed of a second pattern.

In addition, an object of the present invention is to prevent the pattern defect and disconnection of the electrodes constituting the multi-layer by applying the multi-layered pattern structure when forming a liquid crystal display device having a multi-layer.

Liquid crystal display device of the present invention for achieving the above object is an island-type semiconductor layer formed on the first substrate; A first insulating film formed on the first substrate including the semiconductor layer; A storage electrode line and a gate line formed on the first insulating layer, and two gate electrodes extending from the gate line; A second insulating film stacked on the gate electrode; A data line formed on the second insulating film; A source electrode and a drain electrode formed to be spaced apart from each other with the gate electrode interposed therebetween and connected to the data line and the pixel electrode, respectively; A storage electrode formed on the storage electrode line by extending the drain electrode; A pixel electrode connected to the drain electrode and receiving a signal; A common electrode formed on a second substrate to form an electric field with the pixel electrode; A color filter layer formed on the second substrate; And a liquid crystal layer formed between the first substrate and the second substrate.

The semiconductor layer is composed of a polysilicon layer, and a portion of the outer line is bent in a stepped shape. In more detail, when the pixel electrode is overlapped and stacked on a portion of the semiconductor layer on the top of the semiconductor layer, the semiconductor layer is bent at a predetermined interval from a boundary at which the pixel electrode is overlapped. It becomes a staircase-like structure.

In addition, the liquid crystal display device comprises: a gate line and a data line formed on the first substrate; A gate electrode extending from the gate line; A first insulating film stacked on the gate electrode; A semiconductor layer formed on the first insulating film; A source electrode and a drain electrode formed to be spaced apart from each other with the gate electrode interposed therebetween and connected to the data line and the pixel electrode, respectively; A storage electrode formed on the storage electrode line by extending the drain electrode; A pixel electrode connected to the drain electrode and receiving a signal; A common electrode formed on a first substrate to form a transverse electric field with the pixel electrode; A color filter layer formed on the second substrate; And a liquid crystal layer formed between the first substrate and the second substrate.

The semiconductor layer is an amorphous silicon layer, and in a region where the data line and the gate line overlap, a portion of an outer line of the gate line is formed to have a bent pattern such as an uneven protrusion.

In general, in the liquid crystal display device, as the layers overlap on the first substrate and are stacked in multiple layers, the step is severely generated.

Such a step caused by multiple layers may cause various problems in the liquid crystal display device. In particular, the pattern shape of the electrode layer formed on the upper layer is changed during the etching process of the mask process, which is subjected to several times or more during the manufacturing process. The upper electrode layer may be disconnected.

Accordingly, the liquid crystal display device according to the present invention solves the above-described problem by modifying the shape of a portion of the lower layer of any of the upper and lower layers overlapping the first substrate. This will be described below with reference to the drawings.

First, FIG. 2A illustrates an insulating film 201 applied over an entire surface of a first substrate 200 on which an optional lower layer 210 is formed, and a metal material layer 203 for forming an upper layer on the insulating film 201. It is a figure which showed this arbitrary applied board | substrate as an example. Here, the line D indicated by a dotted line virtually illustrates the outer line D of the upper layer (not shown) to be overlapped and stacked on the lower layer 210.

In order to pattern the already stacked metal material layer 203 in the form of a line of the dotted line D, a photoresist film (not shown) is applied to the entire upper area of the metal material layer 203, and the photoresist film is It is patterned along the line of the dotted line D, and has a photosensitive film 208 pattern as shown in FIG. 4B. Thereafter, wet etching is performed by an etchant using the photoresist layer 208 pattern, and the upper layer is formed by patterning the metal material layer 203 according to the shape of the photoresist layer 208. .

However, the electrode pattern of the upper layer formed by the above method may have the following problems. That is, as shown in FIG. 2C seen from the line II ′ of FIG. 2B, when the photoresist film 208 is applied to an area where a step occurs due to the lower layer 210, the photoresist film 208 is stepped. It may not be formed in close contact with the generating unit, and may have a kind of gap N as shown in the drawing.

In the gap N, the etchant penetrates between the stepped portion and the photoresist in the etching process using the etchant in the direction of the arrow of FIG. 2B, thereby etching a portion of the upper layer instead of the etching target region, thereby causing a defect in the pattern. Not only will it occur, but if it is severe, it will lead to disconnection of the upper layer.

In the liquid crystal display according to the present invention, as shown in FIG. 2D, an outer line shape of the lower layer 210 is formed along an infiltration path of an etchant through which an etchant penetrates between the stepped portion and the photosensitive layer among regions where the upper and lower layers overlap. By bending to change the electrode pattern M, the penetration path of the etchant is changed in the direction of the arrow, and the possibility of disconnection of the electrode to be positioned above is reduced.

At this time, the change of the penetration path of the etchant means an increase in the penetration distance of the etchant. In other words, the penetration area of the etchant is relatively smaller than the length of the entire electrode. Therefore, it is possible to minimize the pattern defects due to etchant penetration.

The present invention can reduce the disconnection caused by the polycrystalline silicon layer in which the step is severely formed by the crystallization mark or the like, and therefore, the present invention can be used to manufacture a polysilicon liquid crystal display device.

Hereinafter, a polysilicon liquid crystal display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

3 illustrates a unit pixel of a liquid crystal display according to an exemplary embodiment of the present invention. As shown in the drawing, a gate line 301 and a data line 303 are vertically and horizontally arranged on a transparent first substrate to define a pixel area. do. Also, a thin film transistor 209 is formed near the intersection of the gate line 301 and the data line 303. The thin film transistor 309 includes a semiconductor layer 305 formed of polycrystalline silicon and a gate electrode formed thereon. 301a, 301b and source / drain electrodes 302a, 302b. In this case, a portion of the semiconductor layer 305 extends to form the storage lower electrode 305a.

Two gate electrodes 301a and 301b constituting the dual gate are formed to protrude from the gate line 301, and the source electrode 302a is formed to protrude from the data line 303, and the first contact hole 307a. Is connected to the semiconductor layer 305 through. In this case, the gate electrode may be made of one gate electrode. One side of the drain electrode 319b is connected to the semiconductor layer 305 through the second contact hole 307b, and the other side of the drain electrode 319b applies a signal to the pixel electrode 320 through the third contact hole 307c. The pixel electrode 320 receiving the signal thus forms an electric field together with a common electrode (not shown) formed on the second substrate (not shown) to drive the liquid crystal.

In addition, a storage upper electrode 311 formed of the same material as the gate line 301 is formed on the storage lower electrode 305a to form a capacity together with the storage lower electrode 305a.

In the liquid crystal display device configured as described above, when a gate signal is applied to the gate electrodes 301a and 301b, a channel is formed in the semiconductor layer 305 so that the data signal of the source electrode 302a is used to transfer the semiconductor layer 305. The storage capacitor Cst is charged to the drain electrode 302b via the gate voltage while the gate signal is applied to the gate electrodes 301a and 301b and then the pixel electrode 320 when the next gate line 301 is driven. ) Discharges the charged voltage while supplying the data voltage to the pixel voltage. On the other hand, when a gate signal having a low level is applied to the gate electrodes 301a and 301b, the channel formed in the semiconductor layer 305 is cut off and the transmission of the data signal to the drain electrode 302b is stopped.

In addition, the use of a dual gate electrode as described above can reduce the leakage current generated when the gate signal is blocked, but it is also possible to use a single gate electrode.

On the other hand, the polysilicon liquid crystal display device according to the present invention is formed by bending some sections of the outer lines of the semiconductor layers 305 and 305a formed in an island form, in particular, as a step. 3A and 3B show a semiconductor layer having a bending pattern as described above.

That is, as described above, a step of forming an outer line of the semiconductor layer along a path through which an etchant to be used in the etching process of the pixel electrode in the region where the semiconductor layer and the pixel electrode are to be overlapped can penetrate between the step portion due to the semiconductor layer and the photoresist layer. Forming a bent structure of the shape, by changing the penetration path of the etchant, that is, the possibility of deformation of the pattern of the pixel electrode to be located thereon is reduced.

Hereinafter, a description will be given through a manufacturing process of a polysilicon liquid crystal display device according to a first embodiment of the present invention.

4A to 4D illustrate a manufacturing process of the liquid crystal display according to the present invention. First, as shown in FIG. 4A, a transparent substrate 400 is prepared, and then a semiconductor layer (not shown) is formed thereon. Afterwards, a storage bottom electrode 405a including an island-shaped semiconductor layer 405 and an extension line of the semiconductor layer 405 is formed through a first mask process.

The semiconductor layer is deposited through a plasma enhanced chemical vapor deposition (PECVD) method on the substrate 400 to a predetermined thickness, and then formed through a dehydrogenation process and a crystallization process. At this time, the dehydrogenation process is a process for removing hydrogen bonded in the amorphous silicon layer is put into a heating furnace and is made by heating at a temperature of about 400 ℃. That is, in the process of forming the amorphous silicon layer, since the bonds of the molecules are formed in an unstable amorphous state, hydrogen ions are bonded to the excess bond groups of the molecules, and these hydrogen ions are impurity in the process of crystallizing the amorphous silicon. It must be removed beforehand, as it may damage the silicon layer during crystallization.

The crystallization process may be a heating method for heating the amorphous silicon layer in a high temperature furnace and a laser crystallization method for instantaneously heating and crystallizing the amorphous silicon layer using excimer laser energy. Since the laser crystallization method can form a large grain size during the crystallization process, there is an advantage that can significantly improve the electrical mobility than the heating method, it is effective when forming a thin film transistor requiring a high speed operation.

Although not shown, a buffer layer such as SiOx or SiNx may be formed on the substrate 400 before the semiconductor layer is formed. In this case, as the temperature increases in the heat treatment process of converting the amorphous silicon into polycrystalline silicon, the buffer layer serves to prevent impurities contained in the substrate 400 from entering and contaminating the semiconductor layer.

Next, as shown in FIG. 4B, a first insulating film (not shown) such as a silicon oxide film (SiO 2) or a silicon nitride film (SiN x), which is a gate insulating film, is formed on the entire surface of the substrate 400 including the semiconductor layers 405 and 405 a. And a first metal film (not shown) such as aluminum (Al), molybdenum (Mo), copper (Cu), or a double layer of aluminum and molybdenum. Subsequently, the first metal layer is patterned through a second mask process, so that the gate electrodes 401 and the gate electrodes separated from the gate lines 401, that is, the first and second gate electrodes 401a and 401b and the storage lower electrode, are formed. A storage upper electrode 411 positioned on the upper portion 405a is formed. In this case, the storage lower electrode 405a and the storage upper electrode 411 form a storage capacitor Cst with a first insulating layer interposed therebetween.

Subsequently, the impurity ions are implanted into the semiconductor layer 405 by applying the first and second gate electrodes 401a and 401b and the storage lower electrode 405a as a mask so that the source region 412a is implanted into the impurity ions. And drain regions 412b, respectively. At this time, the source / drain regions 412a and 412b are formed to improve ohmic contact characteristics with electrodes connected to the regions by metallizing a part of the semiconductor layer formed of polycrystalline silicon. Mainly uses Group III impurity ions (eg, boron (B)). This is because the manufacturing process of the liquid crystal display device using polysilicon as a semiconductor layer is simpler than the N-type TFT and there is no problem of deterioration of the device. However, when manufacturing an N-type TFT, it can be used by implanting Group 5 impurity ions such as phosphorus (P).

As described above, when the formation of the source / drain regions 412a and 412b through impurity implantation is completed, a second insulating film (not shown) is deposited on the upper part, and then patterned by a third mask process. First and second contact holes (not shown) are formed to expose portions of the source region 417a and the drain region 417b.

Next, by applying a second metal film such as molybdenum (Mo), molybdenum alloys (MoTa, MoW) on top of it, and patterning it through a fourth mask process, as shown in Figure 3c, the data line 404 source Drain electrodes 402a and 402b are formed. In this case, the source electrode 402a is connected to the source region 412a through the first contact hole 407a, and the drain electrode 419b is connected to the drain region 412b through the second contact hole 407b. do.

Subsequently, a third insulating film (not shown) is formed by coating an organic film such as benzocyclobutene (BCB) or photoacryl (phto acryl) on the entire surface of the substrate including the source electrode 402a and the drain electrode 402b. As shown in 3d, the third insulating film (not shown) is patterned through the fifth mask process to form a third contact hole 407c exposing a part of the drain electrode 202b. Subsequently, a transparent conductive layer (not shown) such as indium tin oxide (ITO) or indium zinc oxide (IZO) is coated on the third insulating film (not shown) on which the third contact hole 207c is formed, and a sixth mask process The transparent conductive layer is patterned to form a pixel electrode 420. The pixel electrode 420 is electrically connected to the drain electrode 402b through a third contact hole 407c.

FIG. 5 is a view showing a second embodiment of the present invention, in which a bending pattern according to the present invention is applied to a general amorphous silicon in plain switching mode liquid crystal display device.

As shown in the figure, the transverse electric field mode liquid crystal display device includes a data line 500 and a gate line 501 arranged on the first substrate 503 to define a pixel area, and the gate line 501 and the data line. And a thin film transistor T arranged at an intersection point of 500, and a pixel electrode 519 and a common electrode 511 arranged substantially parallel to the data line 500 in the pixel.

The thin film transistor T is formed on the first substrate 503 and is formed of a gate electrode 510 connected to the gate line 501 and a gate insulating film made of a material such as SiNx or SiOx stacked on the gate electrode 510. (Not shown), a semiconductor layer 515 formed on the gate insulating layer, an ohmic contact layer (not shown) formed on the semiconductor layer 515, and a data line 500 and a pixel formed on the ohmic contact layer. It consists of a source electrode 517 and a drain electrode 518 respectively connected to the electrode 519.

The common electrode 511 in the pixel is formed on the first substrate and connected to the common line 505, and the pixel electrode 519 is formed on the gate insulating film 513 and connected to the drain electrode 518 of the thin film transistor T. do.

On the thin film transistor T, the pixel electrode 519 and the gate insulating film, a protective film (not shown) made of a material such as SiNx or SiOx is stacked over the entire substrate, and a first alignment layer (not shown) is coated thereon and a liquid crystal is coated thereon. The orientation direction of the layer is determined. The liquid crystal molecules (not shown) are oriented in the rubbing direction between the common electrode 511 and the pixel electrode 119 when no voltage is applied.

In addition, on the first substrate 103 and the corresponding second substrate 104, a light shielding layer 106 for preventing light leakage, a color filter layer 107 made of color filter elements of R, G and B, and an overcoat Layers 108 are stacked one after the other.

On the other hand, the gate in the region where the data line 500 generates a step below the gate line 501, that is, the region where the data line 500 and the gate line 501 overlap to distinguish a boundary between pixels. Line 500 has a multi-layered pattern structure of the bending pattern as shown in the figure.

The bending pattern has the same shape as the protrusion of the unevenness.                     

The bending pattern is formed along the gap formed between the gate line 501 and the photoresist film (not shown) when the data line 500 overlaps the gate line 501 through a mask process. By changing the path through which the cheat penetrates, the pattern change and disconnection of the data line 500 are prevented.

The gist of the present invention is that the photoresist film is not adhered and applied at the stepped portion due to the lower layer on the substrate, and when the gap is formed between the photoresist film and the etching target layer, the etchant penetrates along the gap and overlies the etching target layer. As a multi-layered pattern structure for preventing the pattern of the upper layer from being changed or disconnected by etching, the scope of the present invention is not limited to the example of the structure described above on the present specification.

That is, in the spirit of the present invention, the structure of the lower layer does not necessarily have to be changed into a stepped pattern, but may be formed as a structure having a groove such as a recess. In other words, any pattern is irrelevant in a direction to reduce the disconnection by changing the penetration path of the etchant and increasing the penetration distance.

In addition, the multi-layered pattern structure of the present invention is not necessarily limited to the semiconductor layer and the storage upper electrode of the polysilicon liquid crystal display device, and various other layers, for example, gate lines, data lines, gate electrodes, source electrodes, and drain electrodes. The same applies to the common electrode and the pixel electrode, and the same can be applied to the amorphous silicon liquid crystal display device.

In addition, the pattern formation of the present invention can be applied to all kinds of liquid crystal display devices such as IPS mode liquid crystal display device, twisted TN mode liquid crystal display device and VA (vertical alingment) mode liquid crystal display device.

That is, the range of the idea of the present invention includes any layer image of the liquid crystal display device in which a step is generated by stacking multiple layers.

Therefore, the above specification is not intended to limit the rights of the present invention, the scope of the rights according to the present invention will be determined by the claims below.

As described above, in the present invention, in forming a liquid crystal display device, a bending pattern is formed in a portion of a lower edge of a lower layer in a region where multiple electrode layers overlap, thereby forming an electrode in an etching process using an etchant. Pattern defects and disconnection can be prevented.

Claims (7)

A first substrate and a second substrate; A semiconductor layer formed on the first substrate; A plurality of gate lines and data lines arranged vertically and horizontally on the first substrate to define pixel regions; A source electrode and a drain electrode to receive a signal from the data line; A pixel electrode receiving a signal from the source electrode and the drain electrode; A storage upper electrode overlapping a portion of the semiconductor layer to form a capacity; A color filter layer formed on the second substrate; And It comprises a liquid crystal layer formed between the first and second substrate, And at least one edge portion of at least one of the semiconductor layer, the gate line, the data line, the source electrode, the drain electrode, and the storage upper electrode has a multilayer pattern structure having a bent pattern. The method of claim 1, wherein the bending pattern, And a bending pattern formed in a portion of an outer line of a lower layer that generates a step in the multi-layer structure of the first substrate. The method of claim 5, wherein the semiconductor layer, And a multi-layered pattern structure in which the outer line overlapping the pixel electrode is bent under the pixel electrode. The method of claim 1, wherein the storage upper electrode, And a multi-layered pattern structure in which the outer line overlapping the pixel electrode is bent under the pixel electrode. A first substrate and a second substrate; A plurality of gate lines and data lines arranged vertically and horizontally on the first substrate to define pixel regions; A source electrode and a drain electrode to receive a signal from the data line; At least a pair of pixel electrodes and a common electrode arranged substantially parallel to generate a transverse electric field; A common electrode line electrically connecting the common electrode; A pixel electrode line electrically connecting the pixel electrode; A color filter layer formed on the second substrate; And And a liquid crystal layer formed between the first and second substrates, the gate line, the data line, the source electrode, the drain electrode, the pixel electrode, the common electrode, the common electrode line, and the pixel electrode. At least one edge portion of the line is formed in a multi-layered pattern structure having a bent pattern. The method of claim 5, wherein the gate line, And a multi-layered pattern structure having an outer line overlapping the data line and positioned below the data line. Board; A first pattern of at least one layer formed on said substrate; And The multi-layered pattern structure disposed under the first pattern and configured of a second pattern having a bent line overlapping the first pattern.

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