KR20050116362A - 트랜스 열전 소자 - Google Patents

트랜스 열전 소자 Download PDF

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Publication number
KR20050116362A
KR20050116362A KR1020057009357A KR20057009357A KR20050116362A KR 20050116362 A KR20050116362 A KR 20050116362A KR 1020057009357 A KR1020057009357 A KR 1020057009357A KR 20057009357 A KR20057009357 A KR 20057009357A KR 20050116362 A KR20050116362 A KR 20050116362A
Authority
KR
South Korea
Prior art keywords
legs
temperature
unipolar
couple
thermoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020057009357A
Other languages
English (en)
Korean (ko)
Inventor
라마 벤카타수브라마니안
킵 쿤리
에드워드 시볼라
마이클 푸찬
랜디 알리
프라티마 애드팔리
브룩스 오쿠인
토마스 콜피츠
Original Assignee
넥스트림 써멀 솔루션즈, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 넥스트림 써멀 솔루션즈, 인크. filed Critical 넥스트림 써멀 솔루션즈, 인크.
Publication of KR20050116362A publication Critical patent/KR20050116362A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Control Of Temperature (AREA)
KR1020057009357A 2002-11-25 2003-11-25 트랜스 열전 소자 Withdrawn KR20050116362A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42875302P 2002-11-25 2002-11-25
US60/428,753 2002-11-25

Publications (1)

Publication Number Publication Date
KR20050116362A true KR20050116362A (ko) 2005-12-12

Family

ID=32393453

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057009357A Withdrawn KR20050116362A (ko) 2002-11-25 2003-11-25 트랜스 열전 소자

Country Status (6)

Country Link
US (1) US7838760B2 (enExample)
EP (1) EP1579512A4 (enExample)
JP (1) JP2006507690A (enExample)
KR (1) KR20050116362A (enExample)
AU (1) AU2003293034A1 (enExample)
WO (1) WO2004049463A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220151080A (ko) 2021-05-04 2022-11-14 주식회사 이노와이어리스 무선 이어폰의 오디오 품질 측정 시스템

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EP2234839B1 (en) 2008-02-01 2016-06-29 Gentherm Incorporated Condensation and humidity sensors for thermoelectric devices
US20090199887A1 (en) * 2008-02-08 2009-08-13 North Carolina State University And Nextreme Thermal Solutions, Inc. Methods of forming thermoelectric devices including epitaxial thermoelectric elements of different conductivity types on a same substrate and related structures
US20090205696A1 (en) * 2008-02-15 2009-08-20 Nextreme Thermal Solutions, Inc. Thermoelectric Heat Pumps Providing Active Thermal Barriers and Related Devices and Methods
CN101566506B (zh) * 2008-04-22 2013-07-03 中国计量学院 一种基于微型桥谐振器的薄膜热电变换器的结构及制作方法
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US8525016B2 (en) 2009-04-02 2013-09-03 Nextreme Thermal Solutions, Inc. Thermoelectric devices including thermoelectric elements having off-set metal pads and related structures, methods, and systems
US9601677B2 (en) 2010-03-15 2017-03-21 Laird Durham, Inc. Thermoelectric (TE) devices/structures including thermoelectric elements with exposed major surfaces
US9476617B2 (en) * 2010-10-04 2016-10-25 Basf Se Thermoelectric modules for an exhaust system
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US10777727B2 (en) * 2011-09-08 2020-09-15 Yeda Research And Development Co. Ltd. Efficiency-enhanced thermoelectric devices
US9685599B2 (en) 2011-10-07 2017-06-20 Gentherm Incorporated Method and system for controlling an operation of a thermoelectric device
US9989267B2 (en) 2012-02-10 2018-06-05 Gentherm Incorporated Moisture abatement in heating operation of climate controlled systems
US9506675B1 (en) 2013-09-23 2016-11-29 Geoffrey O. Campbell Thermoelectric coolers with asymmetric conductance
US9662962B2 (en) 2013-11-05 2017-05-30 Gentherm Incorporated Vehicle headliner assembly for zonal comfort
JP6269352B2 (ja) * 2013-12-16 2018-01-31 住友電気工業株式会社 熱電材料、熱電モジュール、光センサおよび熱電材料の製造方法
JP6652493B2 (ja) 2014-02-14 2020-02-26 ジェンサーム インコーポレイテッドＧｅｎｔｈｅｒｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 伝導性および対流性の温度調節シート
CN111998572B (zh) 2014-05-23 2022-05-03 莱尔德热管理系统股份有限公司 包括电阻加热器的热电加热/冷却装置
EP3726594B1 (en) 2014-11-14 2022-05-04 Gentherm Incorporated Heating and cooling technologies
US11857004B2 (en) 2014-11-14 2024-01-02 Gentherm Incorporated Heating and cooling technologies
US11639816B2 (en) 2014-11-14 2023-05-02 Gentherm Incorporated Heating and cooling technologies including temperature regulating pad wrap and technologies with liquid system
US12181351B2 (en) 2018-02-28 2024-12-31 Arthur Beckman Thermopile assembly providing a massive electrical series of wire thermocouple elements
US11289756B2 (en) * 2018-05-18 2022-03-29 The Johns Hopkins University Active thermal management of battery cells via thermoelectrics
US20200035898A1 (en) 2018-07-30 2020-01-30 Gentherm Incorporated Thermoelectric device having circuitry that facilitates manufacture
JP7608337B2 (ja) 2018-11-30 2025-01-06 ジェンサーム インコーポレイテッド 熱電調整システム及び方法
US11152557B2 (en) 2019-02-20 2021-10-19 Gentherm Incorporated Thermoelectric module with integrated printed circuit board
US11974503B2 (en) 2019-09-04 2024-04-30 Lg Innotek Co., Ltd. Thermoelectric module
CN111739881B (zh) * 2020-08-03 2020-11-20 上海南麟集成电路有限公司 一种基于mems热电堆的可见光收发集成器件及其制作方法
US12119285B2 (en) * 2021-09-03 2024-10-15 Microsoft Technology Licensing, Llc Image sensor with actively cooled sensor array

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220151080A (ko) 2021-05-04 2022-11-14 주식회사 이노와이어리스 무선 이어폰의 오디오 품질 측정 시스템

Also Published As

Publication number Publication date
AU2003293034A1 (en) 2004-06-18
US20060225773A1 (en) 2006-10-12
WO2004049463A1 (en) 2004-06-10
JP2006507690A (ja) 2006-03-02
EP1579512A4 (en) 2008-11-19
EP1579512A1 (en) 2005-09-28
WO2004049463B1 (en) 2004-09-10
US7838760B2 (en) 2010-11-23

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20050524

Patent event code: PA01051R01D

Comment text: International Patent Application

N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20050811

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid