KR20050085074A - 탄소 나노튜브의 형성 방법 - Google Patents

탄소 나노튜브의 형성 방법 Download PDF

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Publication number
KR20050085074A
KR20050085074A KR1020057009132A KR20057009132A KR20050085074A KR 20050085074 A KR20050085074 A KR 20050085074A KR 1020057009132 A KR1020057009132 A KR 1020057009132A KR 20057009132 A KR20057009132 A KR 20057009132A KR 20050085074 A KR20050085074 A KR 20050085074A
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KR
South Korea
Prior art keywords
plasma
purification
substrate
carbon nanotubes
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020057009132A
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English (en)
Korean (ko)
Inventor
성 구 강
크레이그 배
Original Assignee
씨드림 디스플레이 코포레이션
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Filing date
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Application filed by 씨드림 디스플레이 코포레이션 filed Critical 씨드림 디스플레이 코포레이션
Publication of KR20050085074A publication Critical patent/KR20050085074A/ko
Withdrawn legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/844—Growth by vaporization or dissociation of carbon source using a high-energy heat source, e.g. electric arc, laser, plasma, e-beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/845—Purification or separation of fullerenes or nanotubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020057009132A 2002-11-22 2003-11-21 탄소 나노튜브의 형성 방법 Withdrawn KR20050085074A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/302,206 US6841003B2 (en) 2002-11-22 2002-11-22 Method for forming carbon nanotubes with intermediate purification steps
US10/302,206 2002-11-22

Publications (1)

Publication Number Publication Date
KR20050085074A true KR20050085074A (ko) 2005-08-29

Family

ID=32324710

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057009132A Withdrawn KR20050085074A (ko) 2002-11-22 2003-11-21 탄소 나노튜브의 형성 방법

Country Status (8)

Country Link
US (1) US6841003B2 (enExample)
EP (1) EP1563121A4 (enExample)
JP (1) JP2006507211A (enExample)
KR (1) KR20050085074A (enExample)
CN (1) CN1729317A (enExample)
AU (1) AU2003294445A1 (enExample)
TW (1) TW200521079A (enExample)
WO (1) WO2004048257A2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2584508A1 (en) 2002-05-09 2003-11-09 Institut National De La Recherche Scientifique Method for producing single-wall carbon nanotubes
US6841002B2 (en) * 2002-11-22 2005-01-11 Cdream Display Corporation Method for forming carbon nanotubes with post-treatment step
US20050132949A1 (en) * 2002-11-22 2005-06-23 Kang Sung G. Forming carbon nanotubes by iterating nanotube growth and post-treatment steps
US7273095B2 (en) 2003-03-11 2007-09-25 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Nanoengineered thermal materials based on carbon nanotube array composites
US7094679B1 (en) * 2003-03-11 2006-08-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube interconnect
US20050221016A1 (en) * 2003-12-31 2005-10-06 Glatkowski Paul J Methods for modifying carbon nanotube structures to enhance coating optical and electronic properties of transparent conductive coatings
US7922993B2 (en) * 2004-07-09 2011-04-12 Clean Technology International Corporation Spherical carbon nanostructure and method for producing spherical carbon nanostructures
US20060008403A1 (en) * 2004-07-09 2006-01-12 Clean Technologies International Corporation Reactant liquid system for facilitating the production of carbon nanostructures
US7563426B2 (en) * 2004-07-09 2009-07-21 Clean Technologies International Corporation Method and apparatus for preparing a collection surface for use in producing carbon nanostructures
US7550128B2 (en) * 2004-07-09 2009-06-23 Clean Technologies International Corporation Method and apparatus for producing carbon nanostructures
US7587985B2 (en) * 2004-08-16 2009-09-15 Clean Technology International Corporation Method and apparatus for producing fine carbon particles
US20060078489A1 (en) * 2004-09-09 2006-04-13 Avetik Harutyunyan Synthesis of small and narrow diameter distributed carbon single walled nanotubes
JP3850427B2 (ja) * 2005-03-22 2006-11-29 株式会社物産ナノテク研究所 炭素繊維結合体およびこれを用いた複合材料
JP4853861B2 (ja) * 2005-04-05 2012-01-11 国立大学法人京都工芸繊維大学 カーボンナノ構造体の形成方法及び装置
WO2008016390A2 (en) 2006-01-30 2008-02-07 Honda Motor Co., Ltd. Catalyst for the growth of carbon single-walled nanotubes
JP5550833B2 (ja) * 2006-01-30 2014-07-16 本田技研工業株式会社 高品質単層カーボンナノチューブ成長の方法および装置
EP2035340B1 (en) * 2006-06-30 2016-03-09 Cardinal CG Company Carbon nanotube glazing technology
CA2661982C (en) * 2006-09-05 2015-07-21 Airbus Uk Limited Method of manufacturing composite material by growing of layers of reinforcement and related apparatus
GB0617460D0 (en) * 2006-09-05 2006-10-18 Airbus Uk Ltd Method of manufacturing composite material
US8182783B2 (en) * 2006-11-16 2012-05-22 New Jersey Institute Of Technology Rapid microwave process for purification of nanocarbon preparations
KR100923304B1 (ko) * 2007-10-29 2009-10-23 삼성전자주식회사 그라펜 시트 및 그의 제조방법
FR2927619B1 (fr) * 2008-02-20 2011-01-14 Commissariat Energie Atomique Croissance de nanotubes de carbone sur substrats de carbone ou metalliques.
EP2397440B1 (en) * 2009-02-10 2019-11-20 Zeon Corporation Substrate for producing aligned carbon nanotube aggregates and method for producing the aligned carbon nanotube aggregates
WO2011109421A1 (en) * 2010-03-01 2011-09-09 Auburn University Novel nanocomposite for sustainability of infrastructure
US9738526B2 (en) * 2012-09-06 2017-08-22 The Trustees Of The Stevens Institute Of Technology Popcorn-like growth of graphene-carbon nanotube multi-stack hybrid three-dimensional architecture for energy storage devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984004996A1 (en) * 1983-06-13 1984-12-20 Ncr Co Process for fabricating semiconductor structures
US6630772B1 (en) * 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6331209B1 (en) * 1999-04-21 2001-12-18 Jin Jang Method of forming carbon nanotubes
EP1129990A1 (en) * 2000-02-25 2001-09-05 Lucent Technologies Inc. Process for controlled growth of carbon nanotubes
JP2002063864A (ja) * 2000-08-21 2002-02-28 Ise Electronics Corp 蛍光表示管
FR2815954B1 (fr) * 2000-10-27 2003-02-21 Commissariat Energie Atomique Procede et dispositif de depot par plasma a la resonance cyclotron electronique de nanotubes de carbone monoparois et nanotubes ainsi obtenus
US20020160111A1 (en) * 2001-04-25 2002-10-31 Yi Sun Method for fabrication of field emission devices using carbon nanotube film as a cathode
US20040037972A1 (en) * 2002-08-22 2004-02-26 Kang Simon Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method
US6841002B2 (en) * 2002-11-22 2005-01-11 Cdream Display Corporation Method for forming carbon nanotubes with post-treatment step

Also Published As

Publication number Publication date
EP1563121A2 (en) 2005-08-17
AU2003294445A8 (en) 2004-06-18
TW200521079A (en) 2005-07-01
US20040099208A1 (en) 2004-05-27
WO2004048257A3 (en) 2004-09-30
CN1729317A (zh) 2006-02-01
US6841003B2 (en) 2005-01-11
WO2004048257A2 (en) 2004-06-10
EP1563121A4 (en) 2008-04-16
JP2006507211A (ja) 2006-03-02
AU2003294445A1 (en) 2004-06-18

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Date Code Title Description
PA0105 International application

Patent event date: 20050520

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid