KR20050069159A - Semiconductor wafer clamp of a platen of a ion implanter - Google Patents

Semiconductor wafer clamp of a platen of a ion implanter Download PDF

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Publication number
KR20050069159A
KR20050069159A KR1020030101113A KR20030101113A KR20050069159A KR 20050069159 A KR20050069159 A KR 20050069159A KR 1020030101113 A KR1020030101113 A KR 1020030101113A KR 20030101113 A KR20030101113 A KR 20030101113A KR 20050069159 A KR20050069159 A KR 20050069159A
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South Korea
Prior art keywords
wafer
platen
ion implantation
clamp
present
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KR1020030101113A
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Korean (ko)
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권순탁
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동부아남반도체 주식회사
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Priority to KR1020030101113A priority Critical patent/KR20050069159A/en
Publication of KR20050069159A publication Critical patent/KR20050069159A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

본 발명은 이온주입장치의 플래튼에 구비된 웨이퍼클램프에 관한 것으로서, 이온주입장치의 플래튼(20) 상측에 상하로 이동하도록 설치되며, 하강하여 플래튼(20)상에 놓여지는 웨이퍼(W)의 가장자리를 클램핑하도록 하단에 복수의 고정편(120)이 구비되는 링형상의 웨이퍼클램프(100)에 있어서, 고정편(120) 각각의 하측면에 웨이퍼(W)의 가장자리와 접촉시 충격을 흡수하도록 충격흡수패드(130)가 부착된다. 따라서, 본 발명은, 이온주입공정을 실시하기 위하여 플래튼상에 놓여진 웨이퍼를 클램핑시 웨이퍼 표면과의 접촉으로 인한 충격을 흡수함으로써 웨이퍼의 칩핑이나 손상을 방지하여 웨이퍼의 수율을 향상시키는 효과를 가지고 있다.The present invention relates to a wafer clamp provided in the platen of the ion implantation apparatus, which is installed to move up and down on the platen 20 of the ion implantation apparatus, and is lowered and placed on the platen 20 (W). In the ring-shaped wafer clamp 100 having a plurality of fixing pieces 120 at the bottom to clamp the edges of the wafer), an impact is generated when the edges of the wafers W come into contact with the lower side of each of the fixing pieces 120. The shock absorbing pad 130 is attached to absorb. Therefore, the present invention has the effect of improving the yield of the wafer by preventing the chipping or damage of the wafer by absorbing the impact caused by the contact with the wafer surface when clamping the wafer placed on the platen to perform the ion implantation process .

Description

이온주입장치의 플래튼에 구비된 웨이퍼클램프{SEMICONDUCTOR WAFER CLAMP OF A PLATEN OF A ION IMPLANTER}Wafer clamp provided on the platen of the ion implanter {SEMICONDUCTOR WAFER CLAMP OF A PLATEN OF A ION IMPLANTER}

본 발명은 이온주입장치의 플래튼에 구비된 웨이퍼클램프에 관한 것으로서, 보다 상세하게는 이온주입공정을 실시하기 위하여 플래튼상에 놓여진 웨이퍼를 클램핑시 웨이퍼 표면과의 접촉으로 인한 충격을 흡수함으로써 웨이퍼의 칩핑이나 손상을 방지하는 이온주입장치의 플래튼에 구비된 웨이퍼클램프에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer clamp provided in a platen of an ion implantation apparatus. It relates to a wafer clamp provided on the platen of the ion implantation device to prevent chipping or damage.

일반적으로, 반도체 소자를 제조하기 위하여 여러 가지 단위공정이 실시되며, 이러한 단위공정중에서 이온주입공정은 웨이퍼 표면에 불순물을 플라즈마 상태의 이온빔 상태로 만든 후 웨이퍼 표면에 침투시켜 필요한 전도형 및 비저항의 소자를 얻기 위한 공정이다.In general, various unit processes are performed to fabricate a semiconductor device. In the unit process, an ion implantation process makes impurities on the surface of a wafer into a plasma ion beam, and then penetrates the surface of the wafer to obtain a conductive and resistive device. Process to obtain.

이온주입공정을 실시하는 장치의 프로세스 챔버에는 이온주입을 위해 웨이퍼가 놓여지는 플래튼(platen)이 구비된다.The process chamber of the apparatus for performing the ion implantation process is provided with a platen on which the wafer is placed for ion implantation.

이온주입장치의 플래튼은 웨이퍼를 클램핑하기 위한 방식으로 웨이퍼클램프에 의해 기계적으로 웨이퍼를 클램핑하는 방식과 정전기에 의해 웨이퍼를 클램핑하는 방식이 있다.The platen of the ion implantation apparatus is a method for clamping a wafer, and a method of clamping a wafer mechanically by a wafer clamp and a method of clamping a wafer by static electricity.

종래의 이온주입장치의 플래튼에 구비되어 웨이퍼를 기계적으로 클램핑하는 웨이퍼클램프를 첨부된 도면을 이용하여 설명하면 다음과 같다.A wafer clamp provided on a platen of a conventional ion implantation apparatus to mechanically clamp a wafer will be described with reference to the accompanying drawings.

도 1은 종래의 기술에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프를 도시한 측면도이고, 도 2는 종래의 기술에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프를 도시한 저면도이다.1 is a side view showing a wafer clamp provided on the platen of the ion implantation apparatus according to the prior art, and FIG. 2 is a bottom view showing a wafer clamp provided to the platen of the ion implantation apparatus according to the prior art. .

도시된 바와 같이, 종래의 기술에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프(10)는 이온주입장치의 플래튼(20) 상측에 승강수단(미도시)에 의해 상하로 이동하도록 설치되어 하강하여 플래튼(20)상에 놓여지는 웨이퍼(W)의 가장자리를 클램핑하는 것으로서, 링형상의 몸체(11)와 몸체(11) 하단에 일정 간격으로 형성되는 복수의 고정편(12)을 포함한다.As shown, the wafer clamp 10 provided in the platen of the ion implantation apparatus according to the prior art is installed to move up and down by elevating means (not shown) on the platen 20 of the ion implantation apparatus. Clamping the edge of the wafer (W) to be lowered and placed on the platen 20, and includes a ring-shaped body 11 and a plurality of fixing pieces 12 formed at regular intervals on the lower end of the body (11) do.

이와 같은 종래의 이온주입장치의 플래튼에 구비된 웨이퍼클램프(10)는 승강수단(미도시)에 의해 몸체(11)가 하강시 여섯 개로 이루어진 고정편(12)이 플래튼(20) 상측에 안착된 웨이퍼(W)의 가장자리의 여섯 곳을 가압함으로써 웨이퍼(W)가 플래튼(20)에 밀착되어 클램핑되도록 한다.The wafer clamp 10 provided in the platen of the conventional ion implantation device has six fixing pieces 12 formed on the platen 20 when the body 11 is lowered by lifting means (not shown). By pressing six positions of the edge of the seated wafer W, the wafer W is brought into close contact with the platen 20 and clamped.

그러나, 이와 같은 종래의 이온주입장치의 플래튼에 구비된 웨이퍼클램프(10)는 승강수단(미도시)의 구동에 의한 기계적인 동작으로 인해 고정편(12)이 웨이퍼(W) 에지부분을 가압함으로써 웨이퍼(W)의 가장자리부분이 칩핑(chipping)되거나 이로 인해 손상되는 현상이 빈번하게 발생하는 문제점을 가지고 있었다.However, in the wafer clamp 10 provided in the platen of the conventional ion implantation device, the fixing piece 12 presses the wafer W edge part due to a mechanical operation by driving a lifting means (not shown). As a result, the edge portion of the wafer W is frequently chipped or damaged.

특히, 웨이퍼클램프(10)를 상하로 이동시키는 승강수단(미도시)의 모션 콘트롤 PCB에 문제가 발생시 고정편(12)에 의한 웨이퍼(W)의 칩핑이나 손상은 증가한다.In particular, when a problem occurs in the motion control PCB of the lifting means (not shown) for moving the wafer clamp 10 up and down, the chipping or damage of the wafer W by the fixing piece 12 increases.

또한, 웨이퍼(W)가 플래튼(20)의 진동이나 그 밖의 원인으로 인해 플래튼(20)상에 제대로 중심이 정렬되지 않은 상태로 놓이는 경우 웨이퍼클램프(10)의 고정편(12)이 웨이퍼(W)의 가장자리를 벗어나 클램핑함으로써 웨이퍼(W) 표면에 스크래칫 등 손상을 유발시키는 문제점을 가지고 있었다.In addition, when the wafer W is not properly centered on the platen 20 due to the vibration of the platen 20 or other causes, the fixing piece 12 of the wafer clamp 10 is the wafer. Clamping off the edge of (W) has a problem of causing scratches or the like on the surface of the wafer (W).

본 발명은 상술한 종래의 문제점을 해결하기 위한 것으로서, 본 발명의 목적은 이온주입공정을 실시하기 위하여 플래튼상에 놓여진 웨이퍼를 클램핑시 웨이퍼 표면과의 접촉으로 인한 충격을 흡수함으로써 웨이퍼의 칩핑이나 손상을 방지하여 웨이퍼의 수율을 향상시키는 이온주입장치의 플래튼에 구비된 웨이퍼클램프를 제공하는데 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to absorb the chipping or damage of the wafer by absorbing the impact caused by contact with the wafer surface when clamping the wafer placed on the platen to perform the ion implantation process It is to provide a wafer clamp provided on the platen of the ion implantation apparatus to prevent the increase of the yield of the wafer.

이와 같은 목적을 실현하기 위한 본 발명은, 이온주입장치의 플래튼 상측에 상하로 이동하도록 설치되며, 하강하여 플래튼상에 놓여지는 웨이퍼의 가장자리를 클램핑하도록 하단에 복수의 고정편이 구비되는 링형상의 웨이퍼클램프에 있어서, 고정편 각각의 하측면에 웨이퍼의 가장자리와 접촉시 충격을 흡수하도록 충격흡수패드가 부착되는 것을 특징으로 한다.The present invention for realizing the above object is installed in the upper side of the platen of the ion implantation device to move up and down, the ring-shaped is provided with a plurality of fixing pieces at the bottom to clamp the edge of the wafer which is lowered and placed on the platen In the wafer clamp, a shock absorbing pad is attached to the lower surface of each of the fixing pieces so as to absorb the shock when the wafer contacts the edge of the wafer.

이하, 본 발명의 가장 바람직한 실시예를 첨부한 도면을 참조하여 본 발명의 기술분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 더욱 상세히 설명하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.

도 3은 본 발명에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프를 도시한 측면도이고, 도 4는 본 발명에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프를 도시한 저면도이다. 도시된 바와 같이, 본 발명에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프(100)는 이온주입장치의 플래튼(20) 상측에 승강수단(미도시)에 의해 상하로 이동하도록 설치되며, 하강하여 플래튼(20)상에 놓여지는 웨이퍼(W)의 가장자리를 클램핑시 웨이퍼(W)의 표면과 접하는 복수의 고정편(120) 각각의 하측면에 충격흡수패드(130)가 부착된다. Figure 3 is a side view showing a wafer clamp provided on the platen of the ion implantation apparatus according to the present invention, Figure 4 is a bottom view showing a wafer clamp provided on the platen of the ion implantation device according to the present invention. As shown, the wafer clamp 100 provided in the platen of the ion implantation apparatus according to the present invention is installed to move up and down by lifting means (not shown) on the platen 20 of the ion implantation apparatus, The shock absorbing pad 130 is attached to the lower surface of each of the plurality of fixing pieces 120 contacting the surface of the wafer W when the edge of the wafer W lowered and placed on the platen 20 is clamped.

고정편(120)은 링 형상의 몸체(110) 하단에 일정 간격으로 복수로 형성되고, 도 4에서 나타낸 본 실시예에서는 6개로 이루어지며, 각각의 하측면에 충격흡수패드(130)가 각각 부착된다.The fixing piece 120 is formed in a plurality at regular intervals at the bottom of the ring-shaped body 110, in the present embodiment shown in Figure 4 consists of six, each of the shock absorbing pads 130 is attached to each lower side do.

충격흡수패드(130)는 웨이퍼(W) 표면과 접하더라도 웨이퍼(W)에 칩핑(chipping)이나 스크래칫(scratch)를 유발시키지 않은 재질로 형성되며, 몸체(110)가 승강수단(미도시)에 의해 하강하여 고정편(120)이 웨이퍼(W)를 가압시 고정편(120)과 웨이퍼(W) 표면 사이에 위치하여 웨이퍼(W)에 가해지는 충격을 흡수한다.The shock absorbing pad 130 is formed of a material which does not cause chipping or scratch on the wafer W even when the surface of the shock absorbing pad 130 is in contact with the surface of the wafer W. The body 110 is a lifting means (not shown). The lower piece 120 is positioned between the fixing piece 120 and the surface of the wafer W when the fixing piece 120 presses the wafer W to absorb the impact applied to the wafer W.

이와 같은 구조로 이루어진 이온주입장치의 플래튼에 구비된 웨이퍼클램프의 동작은 다음과 같이 이루어진다.Operation of the wafer clamp provided on the platen of the ion implantation device having such a structure is performed as follows.

이온주입공정을 위하여 플래튼(20)상에 웨이퍼(W)가 안착되면 승강수단(미도시)에 의해 웨이퍼클램프(100)가 하강하여 충격흡수패드(130)가 웨이퍼(W)의 가장자리에 각각 접촉된 상태에서 고정편(120)이 충격흡수패드(130)를 통해 웨이퍼(W) 가장자리를 가압함으로써 웨이퍼(W)는 플래튼(20)상에 고정된다.When the wafer W is seated on the platen 20 for the ion implantation process, the wafer clamp 100 is lowered by elevating means (not shown) so that the shock absorbing pad 130 is positioned at the edge of the wafer W, respectively. The wafer W is fixed on the platen 20 by the fixing piece 120 pressing the edge of the wafer W through the shock absorbing pad 130 in the contacted state.

웨이퍼(W)는 클램핑시 고정편(120)에 집적 접촉되지 않고 충격흡수패드(130)에 접촉됨으로써 가장자리부분이 칩핑되거나 손상되는 것을 방지하며, 웨이퍼(W)가 플래튼(20)으로부터 중심이 정렬되지 않은 상태에서 클램핑되더라도 스크래칫나 파손되는 것을 방지한다.The wafer W is not integrally contacted with the fixing piece 120 at the time of clamping, but is in contact with the shock absorbing pad 130 to prevent the edge portion from being chipped or damaged, and the wafer W is centered from the platen 20. Even if clamped in an unaligned state, it prevents scratches and breakage.

이상과 같이 본 발명의 바람직한 실시예에 따르면, 이온주입공정을 실시하기 위하여 플래튼상에 놓여진 웨이퍼를 클램핑시 웨이퍼 표면과의 접촉으로 인한 충격을 흡수함으로써 웨이퍼의 칩핑이나 손상을 방지한다.According to the preferred embodiment of the present invention as described above, the chipping or damage of the wafer is prevented by absorbing the impact due to the contact with the wafer surface when clamping the wafer placed on the platen to perform the ion implantation process.

상술한 바와 같이, 본 발명에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프는 이온주입공정을 실시하기 위하여 플래튼상에 놓여진 웨이퍼를 클램핑시 웨이퍼 표면과의 접촉으로 인한 충격을 흡수함으로써 웨이퍼의 칩핑이나 손상을 방지하여 웨이퍼의 수율을 향상시키는 효과를 가지고 있다. As described above, the wafer clamp provided on the platen of the ion implantation apparatus according to the present invention absorbs the impact due to contact with the wafer surface when clamping the wafer placed on the platen to perform the ion implantation process, thereby chipping the wafer. It has an effect of improving the yield of the wafer by preventing damage or damage.

이상에서 설명한 것은 본 발명에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프를 실시하기 위한 하나의 실시예에 불과한 것으로서, 본 발명은 상기한 실시예에 한정되지 않고, 이하의 특허청구범위에서 청구하는 바와 같이 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능한 범위까지 본 발명의 기술적 정신이 있다고 할 것이다.What has been described above is just one embodiment for carrying out the wafer clamp provided on the platen of the ion implantation apparatus according to the present invention, the present invention is not limited to the above embodiment, it is claimed in the claims As will be apparent to those skilled in the art to which the present invention pertains without departing from the gist of the present invention, the technical spirit of the present invention will be described to the extent that various modifications can be made.

도 1은 종래의 기술에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프를 도시한 측면도이고,1 is a side view showing a wafer clamp provided in the platen of the ion implantation apparatus according to the prior art,

도 2는 종래의 기술에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프를 도시한 저면도이고,Figure 2 is a bottom view showing a wafer clamp provided on the platen of the ion implantation apparatus according to the prior art,

도 3은 본 발명에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프를 도시한 측면도이고,Figure 3 is a side view showing a wafer clamp provided on the platen of the ion implantation apparatus according to the present invention,

도 4는 본 발명에 따른 이온주입장치의 플래튼에 구비된 웨이퍼클램프를 도시한 저면도이다.Figure 4 is a bottom view showing a wafer clamp provided on the platen of the ion implantation apparatus according to the present invention.

< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>

110 : 몸체 120 : 고정편110: body 120: fixed piece

130 : 충격흡수패드130: shock absorbing pad

Claims (1)

이온주입장치의 플래튼 상측에 상하로 이동하도록 설치되며, 하강하여 상기 플래튼상에 놓여지는 웨이퍼의 가장자리를 클램핑하도록 하단에 복수의 고정편이 구비되는 링형상의 웨이퍼클램프에 있어서,In the ring-shaped wafer clamp is installed to move up and down on the platen of the ion implantation device, the lower portion is provided with a plurality of fixing pieces at the bottom to clamp the edge of the wafer placed on the platen, 상기 고정편 각각의 하측면에 상기 웨이퍼의 가장자리와 접촉시 충격을 흡수하도록 충격흡수패드가 부착되는 이온주입장치의 플래튼에 구비된 웨이퍼클램프.Wafer clamps provided on the platen of the ion implantation device to the shock absorbing pad is attached to the lower side of each of the fixing pieces to absorb the shock when contacting the edge of the wafer.
KR1020030101113A 2003-12-31 2003-12-31 Semiconductor wafer clamp of a platen of a ion implanter KR20050069159A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114792642A (en) * 2022-04-27 2022-07-26 安徽双迈新能源科技有限公司 Semiconductor wafer processing belt cleaning device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114792642A (en) * 2022-04-27 2022-07-26 安徽双迈新能源科技有限公司 Semiconductor wafer processing belt cleaning device
CN114792642B (en) * 2022-04-27 2022-12-06 苏州桔云科技有限公司 Semiconductor wafer processing belt cleaning device

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