KR20050062739A - 웨이퍼를 냉각하기 위한 냉각 유로를 가지는 척 베이스 - Google Patents
웨이퍼를 냉각하기 위한 냉각 유로를 가지는 척 베이스 Download PDFInfo
- Publication number
- KR20050062739A KR20050062739A KR1020030094412A KR20030094412A KR20050062739A KR 20050062739 A KR20050062739 A KR 20050062739A KR 1020030094412 A KR1020030094412 A KR 1020030094412A KR 20030094412 A KR20030094412 A KR 20030094412A KR 20050062739 A KR20050062739 A KR 20050062739A
- Authority
- KR
- South Korea
- Prior art keywords
- chuck
- cross
- section
- cooling
- wafer
- Prior art date
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 claims description 14
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical class O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (4)
- 웨이퍼를 지지하는 척을 지지하는 몸체부; 및상기 척을 냉각하기 위해 평면으로 볼 때 상기 척에 대향되는 표면 아래에 상기 표면의 평면 상의 중심을 중심으로 평면 상에서 볼 때 십자 형태를 이루도록 굴곡진 십자부, 및 상기 십자부에 이어지고 상기 십자부의 외곽을 감싸는 원형 형태의 원형부를 포함하는 냉각 유로를 포함하는 것을 특징으로 하는 척 베이스(chuck base).
- 제1항에 있어서,상기 냉각 유로는 상기 십자부의 한 단부에서 시작하여 상기 원형부의 다른 단부에서 끝나도록 이어지고 상기 십자부의 한 단부와 상기 원형부의 다른 단부 사이로 상기 십자부와 상기 원형부를 이어주는 부분이 지나가는 단일 냉각 유로인 것을 특징으로 하는 척 베이스.
- 제1항에 있어서,상기 몸체부는 상기 척에 상기 웨이퍼를 안착시키기 위한 리프트 핀(lift fin)을 도입하기 위한 네 개의 관통하는 제1홀(hole)들을 더 포함하고,상기 냉각 유로는 상기 십자부와 상기 원형부 사이에 상기 네 개의 제1홀들이 배치되고 상기 제1홀들의 외곽을 상기 십자부의 냉각 유로가 휘감아 돌도록 평면 상에서 볼 때 상기 십자부를 구성하기 위해 굴곡진 것을 특징으로 하는 척 베이스.
- 제1항에 있어서,상기 몸체부는 상기 척에 정전기력을 발생시키기 위한 전력을 공급하기 위한 관통하는 제2홀을 더 포함하고,상기 냉각 유로는 상기 십자부를 구성하기 위해 굴곡지는 부분이 상기 제2홀을 내측으로 휘감아 돌도록 평면 상에서 볼 때 굴곡진 것을 특징으로 하는 척 베이스.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030094412A KR100557675B1 (ko) | 2003-12-22 | 2003-12-22 | 웨이퍼를 냉각하기 위한 냉각 유로를 가지는 척 베이스 |
US10/583,978 US20070274020A1 (en) | 2003-12-22 | 2004-12-22 | Electrostatic Chuck And Chuck Base Having Cooling Path For Cooling Wafer |
JP2006546820A JP2007515805A (ja) | 2003-12-22 | 2004-12-22 | ウエハを冷却するための冷却流路を備えた静電チャック及びチャックベース |
PCT/KR2004/003387 WO2005062360A1 (en) | 2003-12-22 | 2004-12-22 | Electrostatic chuck and chuck base having cooling path for cooling wafer |
CNB2004800385850A CN100426485C (zh) | 2003-12-22 | 2004-12-22 | 静电卡盘 |
EP04808518A EP1700334A1 (en) | 2003-12-22 | 2004-12-22 | Electrostatic chuck and chuck base having cooling path for cooling wafer |
CNA200710198615XA CN101330033A (zh) | 2003-12-22 | 2004-12-22 | 具有用于冷却晶片的冷却路径的卡盘座 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030094412A KR100557675B1 (ko) | 2003-12-22 | 2003-12-22 | 웨이퍼를 냉각하기 위한 냉각 유로를 가지는 척 베이스 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050062739A true KR20050062739A (ko) | 2005-06-27 |
KR100557675B1 KR100557675B1 (ko) | 2006-03-10 |
Family
ID=36808496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030094412A KR100557675B1 (ko) | 2003-12-22 | 2003-12-22 | 웨이퍼를 냉각하기 위한 냉각 유로를 가지는 척 베이스 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070274020A1 (ko) |
EP (1) | EP1700334A1 (ko) |
JP (1) | JP2007515805A (ko) |
KR (1) | KR100557675B1 (ko) |
CN (2) | CN100426485C (ko) |
WO (1) | WO2005062360A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100722935B1 (ko) * | 2005-12-14 | 2007-05-30 | 삼성전자주식회사 | 기판 처리 장치 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7649729B2 (en) * | 2007-10-12 | 2010-01-19 | Applied Materials, Inc. | Electrostatic chuck assembly |
JP5265010B2 (ja) | 2009-07-22 | 2013-08-14 | 三菱電機株式会社 | ヒートポンプ装置 |
CN102446797A (zh) * | 2010-10-12 | 2012-05-09 | 无锡华润上华半导体有限公司 | 一种静电卡盘和半导体加工装置 |
US10431435B2 (en) * | 2014-08-01 | 2019-10-01 | Applied Materials, Inc. | Wafer carrier with independent isolated heater zones |
US9870934B2 (en) * | 2015-07-28 | 2018-01-16 | Micron Technology, Inc. | Electrostatic chuck and temperature-control method for the same |
JP6982394B2 (ja) * | 2017-02-02 | 2021-12-17 | 東京エレクトロン株式会社 | 被加工物の処理装置、及び載置台 |
CN113130279B (zh) * | 2019-12-30 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 下电极组件、等离子体处理装置及其工作方法 |
WO2021221886A1 (en) * | 2020-04-29 | 2021-11-04 | Applied Materials, Inc. | Heater cover plate for uniformity improvement |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5382311A (en) * | 1992-12-17 | 1995-01-17 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
US5474614A (en) * | 1994-06-10 | 1995-12-12 | Texas Instruments Incorporated | Method and apparatus for releasing a semiconductor wafer from an electrostatic clamp |
JPH09167794A (ja) * | 1995-12-15 | 1997-06-24 | Sony Corp | 静電チャックおよびプラズマ処理方法 |
KR200195120Y1 (ko) * | 1998-03-27 | 2000-09-01 | 김영환 | 반도체 웨이퍼 고정용 정전척의 헬륨가스 공급구조 |
KR20000026856A (ko) * | 1998-10-23 | 2000-05-15 | 윤종용 | 고밀도 플라즈마 화학기상증착장치의 정전척 |
KR20010111058A (ko) * | 2000-06-09 | 2001-12-15 | 조셉 제이. 스위니 | 전체 영역 온도 제어 정전기 척 및 그 제조방법 |
KR100427459B1 (ko) * | 2001-09-05 | 2004-04-30 | 주성엔지니어링(주) | 아크 방지용 정전척 |
US6677167B2 (en) * | 2002-03-04 | 2004-01-13 | Hitachi High-Technologies Corporation | Wafer processing apparatus and a wafer stage and a wafer processing method |
KR20050005344A (ko) * | 2003-07-01 | 2005-01-13 | 어댑티브프라즈마테크놀로지 주식회사 | 표면에 냉각 유로를 구비한 정전척 |
-
2003
- 2003-12-22 KR KR1020030094412A patent/KR100557675B1/ko active IP Right Grant
-
2004
- 2004-12-22 US US10/583,978 patent/US20070274020A1/en not_active Abandoned
- 2004-12-22 CN CNB2004800385850A patent/CN100426485C/zh active Active
- 2004-12-22 WO PCT/KR2004/003387 patent/WO2005062360A1/en active Application Filing
- 2004-12-22 JP JP2006546820A patent/JP2007515805A/ja active Pending
- 2004-12-22 EP EP04808518A patent/EP1700334A1/en not_active Withdrawn
- 2004-12-22 CN CNA200710198615XA patent/CN101330033A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100722935B1 (ko) * | 2005-12-14 | 2007-05-30 | 삼성전자주식회사 | 기판 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
CN100426485C (zh) | 2008-10-15 |
CN1898782A (zh) | 2007-01-17 |
CN101330033A (zh) | 2008-12-24 |
US20070274020A1 (en) | 2007-11-29 |
EP1700334A1 (en) | 2006-09-13 |
KR100557675B1 (ko) | 2006-03-10 |
WO2005062360A1 (en) | 2005-07-07 |
JP2007515805A (ja) | 2007-06-14 |
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