KR20050003289A - rotating type chuck for preventing contamination chemical - Google Patents
rotating type chuck for preventing contamination chemical Download PDFInfo
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- KR20050003289A KR20050003289A KR1020030044009A KR20030044009A KR20050003289A KR 20050003289 A KR20050003289 A KR 20050003289A KR 1020030044009 A KR1020030044009 A KR 1020030044009A KR 20030044009 A KR20030044009 A KR 20030044009A KR 20050003289 A KR20050003289 A KR 20050003289A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
본 발명은 반도체 소자의 제조 장비에 관한 것으로, 구체적으로 회전척을 이용한 공정 진행시에 액체상 화학 약품의 침투를 억제할 수 있도록 한 케미컬 오염 방지가 가능한 회전용 척에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing apparatus for a semiconductor device, and more particularly, to a rotating chuck capable of preventing chemical contamination, which can suppress penetration of liquid chemicals during a process using a rotating chuck.
일반적으로 반도체 소자의 제조를 위한 단위 공정 예를 들면, 세정, 스틴 코팅, 식각, 폴리싱등의 공정시에는 웨이퍼를 회전시키기 위한 회전 척이 사용된다.In general, a rotary chuck for rotating a wafer is used in a unit process for manufacturing a semiconductor device, for example, cleaning, stain coating, etching, or polishing.
예를 들어, 웨이퍼 표면에 붙어 있는 이물질을 제거하기 위하여 진행하는 세정 공정은 웨이퍼가 회전할 수 있도록 일정한 위치에 배치한 상태에서 상기 웨이퍼의 일면에 순수 등의 세정수를 분사하여 이루어진다.For example, the cleaning process that proceeds to remove foreign matter adhering to the wafer surface is performed by spraying cleaning water such as pure water on one surface of the wafer while being disposed at a predetermined position so that the wafer can rotate.
이때 상기 웨이퍼가 회전하는 상태를 유지할 수 있는 웨이퍼 유지 장치로서 회전척이 사용된다.At this time, a rotating chuck is used as a wafer holding apparatus capable of maintaining the state in which the wafer rotates.
그리고 습식 식각 공정시에도 웨이퍼 이송 장치를 이용하여 웨이퍼를 챔버 내의 회전 척에 위치시키고, 웨이퍼에 화학용액을 분사하여 식각 공정을 진행한다.In the wet etching process, the wafer is placed on the rotary chuck in the chamber by using a wafer transfer device, and the etching process is performed by spraying a chemical solution on the wafer.
이하에서 첨부된 도면을 참고하여 종래 기술의 회전 척에 관하여 설명한다.Hereinafter, a rotary chuck of the related art will be described with reference to the accompanying drawings.
도 1a는 종래 기술의 회전용 척의 평면 구성도이고, 도 1b는 종래 기술의 회전용 척의 단면 구성 및 액체상 화학 약품의 침투를 나타낸 구성도이다.Figure 1a is a plan view of the rotational chuck of the prior art, Figure 1b is a cross-sectional view of the rotational chuck of the prior art and a block diagram showing the penetration of the liquid chemical.
반도체 소자 제조를 위한 CMP(Chemical Mechanical Polishing)공정 혹은 세정 및 식각시에 적용되는 회전 척은 웨이퍼 주면(device side) 혹은 웨이퍼 이면(non-device side)에 접촉하게 되며, 이를 위해 면상에 바큠 홀(vacuum hole)이 형성된 흡착 플레이트(suction plate), 상기 흡착 플레이트로 바큠을 공급하는 바큠라인, 상기 흡착 플레이트를 회전시키는 회전 구동부등을 구비하게 된다.The rotary chuck applied in the chemical mechanical polishing (CMP) process or the cleaning and etching process for manufacturing a semiconductor device is in contact with the wafer side or the non-device side. A suction plate having a vacuum hole, a bar line for supplying a change to the suction plate, and a rotation driving unit for rotating the suction plate are provided.
종래 기술의 공정 진행 방식은 도 1a에서와 같은 회전용 척위에 진행 대상물(12)을 올려 놓고 대상물 고정부(11)에 의해 고정시킨 후에 액체상 화학약품(13)을 공급하여 화학 반응을 일으키는 것이다.The prior art process proceeding method is to place a moving object 12 on the rotating chuck as shown in Figure 1a and fixed by the object fixing part 11 to supply a liquid chemical 13 to cause a chemical reaction.
이때 대상물위에 액체상 화학 약품을 공급하는 과정에서 도 1b에서와 같이, 공정 진행 대상물(12)위에 공급된 액체상 화학약품(13) 중 일부가 대상물 가장자리를 넘어서 흘러내리게 된다.At this time, in the process of supplying the liquid chemical on the object, as shown in FIG. 1B, some of the liquid chemical 13 supplied on the process object 12 flows down the edge of the object.
종래 기술의 회전용 척에서는 흘러내린 화학약품이 대상물 바닥면을 따라 내부로 침투하게 된다. 이렇게 침투한 화학약품은 대상물 바닥면을 오염시키게 된다.In the rotary chuck of the prior art, the chemicals flowing down penetrate the inside along the bottom of the object. These chemicals will contaminate the bottom of the object.
그러나 이와 같은 종래 기술의 회전용 척은 다음과 같은 문제점이 있다.However, the conventional chuck for rotation has the following problems.
종래 기술의 회전용 척에서는 공정 진행중에 흘러내린 화학 약품이 대상물 바닥면을 따라 내부로 침투하여 공정 진행 대상물의 바닥면을 오염시키게 된다.In the rotary chuck of the prior art, chemicals flowing down during the process penetrate the inside along the bottom of the object to contaminate the bottom of the process object.
이는 바닥면 세정 단계에서 바닥면 전체를 세정해야 하는 문제가 발생한다.This causes a problem that the entire floor surface must be cleaned in the floor cleaning step.
또한, 이러한 화학약품 침투는 진공을 이용하여 대상물을 고정하는 경우에는 공정 진행중 진공 불량을 유발한다.In addition, such chemical penetration causes a vacuum failure during the process when the object is fixed using a vacuum.
이와 같이, 공정 진행중에 액체상 화학약품을 공급하면 공정 진행 대상 물체의 가장자리를 통해서 화학약품이 아래로 흘러 들어가는 종래 기술은 소자의 제조 수율을 저하시킨다.As such, when the liquid phase chemical is supplied during the process, the prior art in which the chemical flows downward through the edge of the object to be processed decreases the manufacturing yield of the device.
본 발명은 이를 방지하기 위해 척에 화학약품이 흘러 들어가는 것을 방지하는 턱을 형성하는 것으로, 회전척을 이용한 공정 진행시에 액체상 화학 약품의 침투를 억제할 수 있도록 한 케미컬 오염 방지가 가능한 회전용 척을 제공하는데 그 목적이 있다.The present invention is to form a jaw to prevent the chemical flow into the chuck in order to prevent this, a rotary chuck capable of preventing chemical contamination to suppress the penetration of liquid chemicals during the process using the rotary chuck The purpose is to provide.
도 1a는 종래 기술의 회전용 척의 평면 구성도Figure 1a is a plan view of a conventional rotating chuck
도 1b는 종래 기술의 회전용 척의 단면 구성 및 액체상 화학 약품의 침투를 나타낸 구성도Figure 1b is a cross-sectional configuration of the rotational chuck of the prior art and the configuration showing the penetration of liquid chemicals
도 2a는 본 발명에 따른 회전용 척의 평면 구성도Figure 2a is a plan view of a rotating chuck in accordance with the present invention
도 2b는 본 발명에 따른 회전용 척의 단면 구성도Figure 2b is a cross-sectional configuration of the rotary chuck in accordance with the present invention
도 3은 본 발명에 따른 오염 방지턱을 적용한 회전용 척의 사진Figure 3 is a photograph of a chuck for applying a pollution prevention jaw according to the present invention
- 도면의 주요 부분에 대한 부호의 설명 --Explanation of symbols for the main parts of the drawing-
21: 대상물 고정부 22: 공정 진행 대상물21: object fixing part 22: process progress object
23: 케미컬 침투 방지턱 24: 액체상 화학 약품23: Chemical penetration barrier 24: Liquid chemical
25: 플레이트 26: 회전축25: plate 26: axis of rotation
27: 바큠 패드27: replacement pad
이와 같은 목적을 달성하기 위한 본 발명에 따른 케미컬 오염 방지가 가능한 회전용 척은 공정 진행 대상물이 위치되는 플레이트와, 상기 플레이트의 중앙에 위치되고 바큠 라인에 연결되어 공정 진행 대상물을 고정하는 바큠 패드와, 상기 플레이트의 에지 부분에 서로 대향되도록 복수개가 구성되어 공정 진행 대상물을 고정하는 대상물 고정부와, 상기 대상물 고정부의 안쪽 부분의 플레이트상에 원형으로 구성되는 케미컬 침투 방지턱과, 상기 플레이트의 중앙 하부에 연결되어 플레이트(25)를 회전시키는 회전축을 포함하는 것을 특징으로 한다.In order to achieve the above object, a chemical contamination prevention rotational chuck according to the present invention includes a plate in which a process object is located, a change pad positioned at a center of the plate and connected to a change line, and fixing a process object. And a plurality of object fixing parts configured to face the edge portions of the plate to fix the object to be processed, a chemical penetration preventing member formed in a circular shape on a plate of an inner part of the object fixing part, and a lower portion of the center of the plate. It is characterized in that it comprises a rotating shaft for rotating the plate 25 is connected to.
본 발명의 다른 목적, 특성 및 이점들은 이하에서의 실시예들의 상세한 설명을 통해 명백해질 것이다.Other objects, features and advantages of the present invention will become apparent from the following detailed description of the embodiments.
본 발명에 따른 케미컬 오염 방지가 가능한 회전용 척의 바람직한 실시예에 관하여 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.With reference to the accompanying drawings, a preferred embodiment of the rotary chuck capable of preventing chemical contamination according to the present invention will be described in detail as follows.
도 2a는 본 발명에 따른 회전용 척의 평면 구성도이고, 도 2b는 본 발명에따른 회전용 척의 단면 구성도이다.Figure 2a is a plan view of the rotary chuck according to the present invention, Figure 2b is a cross-sectional view of the rotating chuck according to the present invention.
그리고 도 3은 본 발명에 따른 오염 방지턱을 적용한 회전용 척의 사진이다.And Figure 3 is a photograph of a rotary chuck to which the pollution prevention jaw according to the invention is applied.
본 발명에서는 공정 진행 대상물(22)의 바닥면과 회전용 척 사이에 케미컬 침투 방지턱(23)을 형성함으로써, 흘러내리는 화학약품이 대상물(22) 바닥면의 중앙으로 침투하는 것을 방지하는 것이다.In the present invention, by forming a chemical penetration barrier 23 between the bottom surface of the process target object 22 and the rotating chuck, to prevent the chemicals flowing down to penetrate the center of the bottom surface of the object 22.
그 구조는 도 2a와 도 2b에서와 같이, 공정 진행 대상물이 위치되는 흡착 플레이트(suction plate)(25)와, 상기 플레이트(25)의 중앙에 위치되어 바큠을 공급하는 바큠 라인에 연결되는 바큠 패드(27)와, 상기 플레이트(25)의 에지 부분에 복수개가 구성되어 공정 진행 대상물(22)을 고정하는 대상물 고정부(21)와, 대상물 고정부(21)의 안쪽에 원형으로 구성되는 케미컬 침투 방지턱(23)과, 플레이트(25)의 중앙 하부에 연결되어 플레이트(25)를 회전시키는 회전축(26)을 포함한다.2A and 2B, the structure has a suction plate 25 in which a process object is located, and a change pad connected to a change line positioned at the center of the plate 25 to supply a change. (27), and a plurality of objects are formed at the edge portion of the plate 25, the object fixing portion 21 for fixing the process object 22, and the chemical infiltration formed in a circular shape inside the object fixing portion 21 The prevention jaw 23 and a rotation shaft 26 connected to the center lower portion of the plate 25 to rotate the plate 25.
케미컬 침투 방지턱(23)은 대상물 바닥면을 기준으로 하는 유체의 두께가 유지되므로 그 두께보다 작은 간격을 갖도록 회전용 척위에 형성한다.The chemical penetration prevention jaw 23 is formed on the chuck for rotation so that the thickness of the fluid based on the bottom surface of the object is maintained to have a smaller gap than the thickness thereof.
공정 진행중에 이러한 케미컬 침투 방지턱(23)에 도착한 유체는 바닥면의 중앙으로 침투할 수 없으며, 케미컬 침투 방지턱(23)에서는 표면 장력이 매우 작으므로 형태를 유지하지 못하고 바닥으로 흘러내리게 된다.During the process, the fluid that reaches the chemical penetration barrier 23 cannot penetrate to the center of the bottom surface, and the chemical penetration barrier 23 flows to the floor without maintaining its shape because the surface tension is very small.
공정 진행은 공정 진행 대상물(22)을 회전용 척위에 올려놓게 되면 중앙의 바큠 패드(27)가 공정 진행 대상물(22)을 진공으로 고정시킨다.In the process proceeding, when the process object 22 is placed on the rotary chuck, the central pad 27 fixes the process object 22 in a vacuum.
그리고 공정 진행중에 원하는 화학 반응을 일으키기 위해서 대상물 위에 해당 액체상 화학약품(24)을 주사한다. 충분한 양의 화학약품을 공급하는 과정에서일부의 화학약품이 대상물의 가장자리를 넘어 측면을 따라 바닥면으로 침투한다.In order to cause a desired chemical reaction during the process, the liquid chemical 24 is injected onto the object. In the supply of sufficient chemicals, some of the chemicals penetrate the floor along the sides beyond the edges of the object.
이렇게 침투한 화학약품은 대상물을 바닥면을 따라 침투하다가 회전용 척위에 형성한 케미컬 침투 방지턱(23)에 도착한다.The chemical thus penetrates the object along the bottom surface and arrives at the chemical penetration barrier 23 formed on the rotating chuck.
케미컬 침투 방지턱(23)에 도착한 화학약품은 공정 진행 대상물(22)과 케미컬 침투 방지턱(23)의 간격이 유체가 흘러 지나갈 수 있는 두께보다 좁을 뿐만 아니라, 케미컬 침투 방지턱(23)에 접촉된 유체의 경우 케미컬 침투 방지턱(23)에 붙어 있는 것이 표면 장력 측면에서 유리하므로 공정 진행 대상물(22)의 중앙으로 침투하지 않는다.The chemicals arriving at the chemical penetration barrier 23 are not only narrower than the thickness at which the fluid flows through the process object 22 and the chemical penetration barrier 23, but also are separated from the fluid in contact with the chemical penetration barrier 23. In this case, it is advantageous in terms of surface tension that is attached to the chemical penetration prevention jaw 23 does not penetrate to the center of the process object 22.
그리고 케미컬 침투 방지턱(23)에 이러한 화학 약품의 양이 증가하면 중력에 의해 케미컬 침투 방지턱(23)을 따라서 아래로 떨어지게 된다.In addition, when the amount of chemicals increases in the chemical penetration barrier 23, it falls down along the chemical penetration barrier 23 by gravity.
이와 같은 본 발명에 따른 케미컬 오염 방지가 가능한 회전용 척에서 케미컬 침투 방지턱(23)과 공정 진행 대상물(22)과의 간격은 화학 약품의 특성에 따라 0 ~ 10mm로 유지한다.In such a rotary chuck for chemical contamination prevention according to the present invention, the distance between the chemical penetration barrier 23 and the process object 22 is maintained at 0 to 10 mm depending on the characteristics of the chemical.
그리고 케미컬 침투 방지턱(23)의 전체 모양은 원형, 사각형, 타원형으로 형성하는 것도 가능하고, 형성 위치는 공정 진행 대상물(22)의 바닥면 중앙에서 대상물의 최외곽 위치까지 가능하다.In addition, the overall shape of the chemical penetration prevention jaw 23 may be formed in a circle, a rectangle, or an oval, and the formation position may be formed from the center of the bottom surface of the process target object 22 to the outermost position of the object.
그리고 케미컬 침투 방지턱(23)의 모양은 공정 진행 대상물(22)의 바닥면과 평행할 수도 있고, 끝면이 둥글 수도 있다.In addition, the shape of the chemical penetration prevention jaw 23 may be parallel to the bottom surface of the process target object 22 or the end surface may be rounded.
또한 내부나 외부 한 방향으로 기울어질 수도 있고 양방향으로 기울어질 수도 있고, 기울어진 면, 평행한 면, 둥근면 등을 복합적으로 사용할 수도 있다.In addition, it can be inclined in one direction inside or outside, can be inclined in both directions, it may be used in combination with the inclined plane, parallel plane, round surface.
그리고 케미컬 침투 방지턱(23)은 회전용 척과 일체형 또는 회전용 척과 분리 가능한 결합형으로 형성하는 것도 가능하다.In addition, the chemical penetration preventing jaw 23 may be formed integrally with the rotating chuck or a coupling type that can be separated from the rotating chuck.
이상 설명한 내용을 통해 당업자라면 본 발명의 기술 사상을 일탈하지 아니하는 범위에서 다양한 변경 및 수정이 가능함을 알 수 있을 것이다.Those skilled in the art will appreciate that various changes and modifications can be made without departing from the spirit of the present invention.
따라서, 본 발명의 기술적 범위는 실시예에 기재된 내용으로 한정되는 것이 아니라 특허 청구의 범위에 의하여 정해져야 한다.Therefore, the technical scope of the present invention should not be limited to the contents described in the embodiments, but should be defined by the claims.
이상에서 설명한 본 발명에 따른 케미컬 오염 방지가 가능한 회전용 척은 다음과 같은 효과가 있다.The rotary chuck capable of preventing chemical contamination according to the present invention described above has the following effects.
본 발명에서는 공정 진행 대상물의 바닥면과 회전용 척 사이에 케미컬 침투 방지턱을 형성함으로써, 흘러내리는 화학약품이 대상물 바닥면의 중앙으로 침투하는 것을 방지할 수 있다.In the present invention, by forming a chemical penetration barrier between the bottom surface of the process object and the rotating chuck, it is possible to prevent the chemicals flowing down to penetrate the center of the object bottom surface.
이는 제품의 수율을 향상시키고 제조 공정의 효율을 높일 수 있다. 또한, 진공 방식을 이용하여 대상물을 고정하는 경우에는 공정 진행중의 진행 불량을 방지하는 효과를 갖는다.This can improve the yield of the product and increase the efficiency of the manufacturing process. In addition, in the case of fixing the object by using a vacuum method has an effect of preventing the progress failure during the process.
Claims (3)
Priority Applications (1)
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KR1020030044009A KR20050003289A (en) | 2003-06-30 | 2003-06-30 | rotating type chuck for preventing contamination chemical |
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KR1020030044009A KR20050003289A (en) | 2003-06-30 | 2003-06-30 | rotating type chuck for preventing contamination chemical |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100904816B1 (en) * | 2007-12-04 | 2009-06-25 | 주식회사 동부하이텍 | Apparatus and Method for Etching Back Side of Wafer |
KR100912701B1 (en) * | 2007-10-22 | 2009-08-19 | 세메스 주식회사 | Spin chuck of wafers and an etcher using it |
-
2003
- 2003-06-30 KR KR1020030044009A patent/KR20050003289A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100912701B1 (en) * | 2007-10-22 | 2009-08-19 | 세메스 주식회사 | Spin chuck of wafers and an etcher using it |
KR100904816B1 (en) * | 2007-12-04 | 2009-06-25 | 주식회사 동부하이텍 | Apparatus and Method for Etching Back Side of Wafer |
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