KR200439927Y1 - Thermoelectric module unit - Google Patents

Abstract

The present invention relates to a thermoelectric element unit capable of removing dew condensation phenomenon around a thermoelectric semiconductor element by heating the accommodating chamber of the housing in which the thermoelectric semiconductor element is stored to evaporate air to make the interior of the accommodating chamber vacuum. ,

A housing 14 accommodating the thermoelectric semiconductor element 12 in the vacuum accommodating chamber 14a, and the housing 14 is in surface contact with one side surface of the thermoelectric semiconductor element 12 accommodated in the housing 14. The heat sink 11 is fixed to dissipate high heat generated in the thermoelectric semiconductor element 12, and is fixed in surface contact with the other surface of the thermoelectric semiconductor element 12 accommodated in the storage chamber 14a of the housing 14. Cool block 13 for transferring the low heat generated from the thermoelectric semiconductor device 12 to the outside, the heat sink 11 on one side of the thermoelectric semiconductor device 12 to fix the cool block 13 to the other side The first adhesive 15 and the second adhesive 16 which bonds one side of the heat sink 11 to the housing 14 and is filled between the housing 14 and the cool block 13 to fix them, the housing 14. Includes; nut 17 is inserted into the insert of the injection molding method.

Thermoelectric Semiconductor, Thermoelectric, Cool Block, Heat Sink, Adhesives, Vacuum, Epoxy

Description

Thermoelectric Module Unit {Thermoelectric module unit}

1 is a front view of a conventional thermoelectric semiconductor device unit

2 is a perspective view of a thermoelectric semiconductor device unit manufactured by the present invention

3 is a cross-sectional view of the thermoelectric semiconductor device is fixed to the heat sink according to the present invention

4 is a diagram in which a cool block is mounted on the thermoelectric semiconductor device of FIG. 3;

5 is a cross-sectional view of the housing is bonded to the heat sink according to the present invention

FIG. 6 is an enlarged detailed view of the inner part of FIG. 5; FIG.

Figure 7 is an enlarged cross-sectional view showing a state in which the nut of the housing according to the present invention is inserted

Figure 8 is an enlarged cross-sectional view showing a pressure fixed state of the heat sink and the housing according to the present invention

9 is a cross-sectional view of the second adhesive is filled between the housing and the cool block according to the present invention

FIG. 10 is a detailed view showing a housing and a cool block assembled state by expanding the inner part of FIG. 9; FIG.

11 is a detailed view showing another assembly state of the housing and the cool block according to the present invention;

12 is a plan view of a housing according to the present invention

13 is a flowchart illustrating a method of manufacturing a thermoelectric semiconductor device unit according to the present invention.

Explanation of symbols on the main parts of the drawings

10: unit 11: heat sink

12: thermoelectric semiconductor element 13: cool block

14 housing 15 first adhesive

16 second adhesive 17 nut

According to the present invention, dew condensation occurs around a thermoelectric semiconductor element due to condensation of moisture in accordance with a temperature change, which is a conventional problem by heating a storage chamber of a housing in which a thermoelectric semiconductor element is stored and evaporating air to make the interior of the chamber into a vacuum state. Not only can it eliminate the occurrence of heat, but also prevents the cold and hot air coexisting around the thermoelectric element due to the vacuum to increase the cooling performance, thermoelectric that can be easily assembled cool block regardless of the thickness of the thermoelectric semiconductor element A semiconductor device unit.

The thermoelectric semiconductor device is a next-generation environmentally friendly cooling method that breaks the existing cooling method that operates a compressor to circulate the refrigerant. Both sides of the body of the thin plate made of ceramic material can be simultaneously cooled and heated by switching electrodes. It keeps the object at room temperature constant -30 ~ + 180C.

1 shows a conventional thermoelectric semiconductor device unit 1 using the thermoelectric semiconductor device. The heat sink 3 is tightly fixed to the heat dissipating surface of the thermoelectric semiconductor element 2 to perform heat dissipation in a large area, and the cool block 4 is tightly fixed to the heat absorbing surface, so that the low temperature generated in the thermoelectric semiconductor element 2 Heat is transferred to the outside. Blowing fans (not shown) are attached to the outside of the heat sink 4 and the cool block 4 to increase heat dissipation and cooling efficiency.

However, in the conventional unit 1, the heat sink 3 and the cool block 4 located on both sides of the thermoelectric semiconductor element 2 are fastened with screws 5 or bolts to closely adhere to the side surfaces of the thermoelectric semiconductor element 2. Since it was fixed, the thermoelectric semiconductor element 2 was used while being exposed to air.

When the thermoelectric semiconductor element 2 is exposed to air as described above, since the temperature difference between both sides is severe and the thickness is thin, cold and hot air coexist around the water vapor and condensation occurs due to water vapor condensation on the low temperature side surface. This dew condensation not only lowers the heat exchange function, but also lowers the cooling efficiency, resulting in a shorter life of the unit.

In addition, since the thermoelectric semiconductor element 2, which is the core of the unit 1, is exposed to the outside, when the physical shock is applied, the thermoelectric semiconductor element 2 is easily damaged, and the screw is assembled to assemble the unit 1. When fastening to a proper torque (0.02kg-m / Bolt / cm) or more when tightening there was a problem that the thermoelectric semiconductor device (2) is broken.

In order to solve this problem, an apparatus (application number: 10-1998-31550) for assembling a thermoelectric semiconductor element in a closed type has been filed. The device was housed in the case (9), and then sealed by installing an O-ring (6) and a lava (7) in the contact portion of the case (9) and the heat sink (2). Between 9) and the cooling plate 1, it was a structure which seals by apply | coating the adhesive agent 14a.

However, the conventional hermetic unit has a structure in which the case 9 and the heat sink 2 are sealed with the O-ring 6 and the lava 7, so that the interior does not become a vacuum state, so that moisture is present in the interior, and thus the conventional Dew condensation could not be solved.

In addition, the unit is not only complicated in structure because the unit is sealed by the O-ring 6 and the lava 7, but also when the surface roughness of the case 9 and the heat sink 2 is not smooth, air is introduced into the unit. there was.

In addition, in order for the O-ring 6 and the lava 7 to be in close contact with the case 9 and the heat sink 2, the case 9 and the heat sink 2 must be fastened with a screw or the like. There was a problem flowing into the interior was not practical in the end.

Thus, the present invention is to solve the problems of the conventional thermoelectric semiconductor device unit as described above, the purpose is to heat the storage chamber of the housing in which the thermoelectric semiconductor device is housed by evaporating the air to the inside of the storage chamber in a vacuum state The present invention provides a thermoelectric element unit capable of eliminating dew condensation around the thermoelectric semiconductor element due to condensation of moisture according to a temperature change, which is a conventional problem.

Another object of the present invention is to provide a thermoelectric element unit that can improve the cooling performance by blocking the phenomenon that the cold and hot air coexist around the thermoelectric element by making the storage chamber in a vacuum state.

Still another object of the present invention is to provide a thermoelectric semiconductor device unit that can easily assemble a cool block regardless of the thickness of the thermoelectric semiconductor device.

According to an aspect of the present invention, there is provided a method of manufacturing a thermoelectric device, the method comprising: attaching a heat dissipating surface of a thermoelectric semiconductor element to one side of a heat sink with a first adhesive and then fixing the heat dissipating surface with a first adhesive;

Applying a first adhesive to at least one side of an endothermic surface of the thermoelectric semiconductor element and an adhesive surface of a cool block adhered thereto, and then mounting a cool block on the endothermic surface so that they are adhered and fixed;

Bonding a contact portion of the heat sink and the housing with a second adhesive to accommodate and fix the thermoelectric semiconductor element and the cool block in the storage compartment of the housing;

Pressing and fixing the housing and the heat sink so that the stopper protruding from the housing presses the step of the cool block to fix the cool block mounted on the heat absorbing surface of the thermoelectric semiconductor element to the heat absorbing surface;

Bonding a housing and a cool block by filling a second adhesive between a gap formed between the storage compartment and the cool block of the housing;

Put the assembly of the unit form through the assembly process into a drying chamber and heat-dry to dry each of the second adhesive to which the heat sink and the housing and the housing and the cool block are adhered, and the heat sink and the cool block heat transfer to the storage compartment of the housing. Heating the air stored therein to pass through a second adhesive filled between the housing and the cool block to evaporate, and after evaporating, curing the second adhesive in a closed state to dry the interior of the storage chamber in a vacuum state; And

And naturally cooling the assembly in the form of the dried unit.

The thermoelectric semiconductor device unit of the present invention manufactured by the manufacturing method includes a housing accommodating a thermoelectric semiconductor device in a vacuum accommodating chamber, and fixed to the housing in surface contact with one side surface of the thermoelectric semiconductor device accommodated in the housing. A heat sink for dissipating high heat generated by a thermoelectric semiconductor element, a cool block which is fixed in surface contact with the other side of the thermoelectric semiconductor element accommodated in the housing of the housing, and transmits low heat generated by the thermoelectric semiconductor element to the outside, the thermoelectric The first adhesive for fixing the heat sink to one side of the semiconductor device and the cool block to the other side, and attaching the heat sink to one side of the heat sink and the housing are filled between the housing and the cool block to fix them so that the storage chamber of the housing is kept in a vacuum state. A second adhesive to be made, characterized in that it comprises a nut that is inserted in the insert injection method on the rim of the housing The.

Hereinafter, a thermoelectric semiconductor device unit and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

Figure 2 is a perspective view of a thermoelectric semiconductor device unit manufactured by the present invention, Figure 3 is a cross-sectional view of the thermoelectric semiconductor device is fixed to the heat sink according to the present invention, Figure 4 is a cool block in the thermoelectric semiconductor device of Figure 3 This is a view of the mounted state, Figure 5 is a cross-sectional view of a state in which the housing is bonded to the heat sink according to the present invention. 8 is an enlarged cross-sectional view illustrating a pressure-fixed state of the heat sink and the housing according to the present invention, and FIG. 9 is a cross-sectional view of a second adhesive agent filled between the housing and the cool block according to the present invention, and FIG. This is a detailed view showing the assembly state of the housing and the cool block by expanding the inside of the circle. 11 is a detailed view showing another assembly state of the housing and the cool block according to the present invention, FIG. 12 is a plan view of the housing according to the present invention, and FIG. 13 is a flowchart illustrating a method of manufacturing a thermoelectric semiconductor device unit according to the present invention.

In the manufacturing method of the thermoelectric semiconductor device unit 10 according to the present invention, as shown in the drawings, the heat dissipating surface of the thermoelectric semiconductor device 12 on one side of the heat sink 11 by pressing the first adhesive (15) to fix it Step S1;

After applying the first adhesive 15 to at least one side of the heat absorbing surface of the thermoelectric semiconductor element 12 and the adhesive surface of the cool block 13 adhered thereto, and then to the heat absorbing surface so that they can be bonded and fixed Mounting a cool block 13 (S2);

The contact portion of the heat sink 11 and the housing 14 to receive and fix the thermoelectric semiconductor element 12 and the cool block 13 in the storage chamber 14a of the housing 14 may include a second adhesive 16. Step S3);

The stopper 14b protruding from the housing 14 presses the step 13a of the cool block 13 to fix the cool block 13 mounted on the heat absorbing surface of the thermoelectric semiconductor element 12 to the heat absorbing surface. Pressing and fixing the housing (14) and the heat sink (11);

Bonding the housing 14 and the cool block 13 by filling the second adhesive 16 between the gaps C formed between the storage chamber 14a of the housing 14 and the cool block 13 (S5). );

The assembly in the form of a unit that has undergone the assembly process is put into a drying chamber and heated to dry each of the second adhesives 16 to which the heat sink 11, the housing 14, and the housing 14 and the cool block 13 are bonded. The second adhesive is filled between the housing 14 and the cool block 13 by heating the air stored in the storage compartment 14a of the housing 14 by heat transfer between the heat sink 11 and the cool block 13. 16 to allow the evaporation to pass through, and after evaporation, the second adhesive 16 is cured in a closed state to dry the interior of the storage chamber 14a in a vacuum state (S6); And

And naturally cooling the assembly in the form of the dried unit (S7).

In the fixing of the heat sink 11 and the thermoelectric semiconductor element 12 (S1), as shown in FIG. 3, the heat dissipation surface of the thermoelectric semiconductor element 12 on one side of the heat sink 11 may be the first adhesive 15. After bonding, the first adhesive 15 is completely cured and fixed.

The first adhesive 15 used a two-component thermal conductive grease (model name: G-747) having good thermal conductivity in an embodiment, and the thermal conductivity of 0.85 Watt / mk to 1.09 Watt / mk is better than that of the one-component grease. It is known. Applying the two-component thermal conductive grease 0.1 to 0.5mm on one side or both sides of the heat sink 11 and the heat conducting semiconductor element 12, and after adhering them, the heat sink 11 and the heat conducting semiconductor element by pressing means such as forceps. (12) was brought into close contact with each other, and then dried in a drying chamber at 60 to 100 ° C. for about 1 to 3 hours to cure the first adhesive 15 to fix the heat sink 11 and the thermoelectric semiconductor element 12.

In a practical example, the two-part thermal conductive grease was applied to each side of the heat sink 11 and the thermal semiconductor element 12 at 0.1 mm, and then dried at 80 ° C. for 2 hours to completely cure the two-part thermal conductive grease.

The first adhesive 15 is to improve heat dissipation effect by transferring heat generated from the thermoelectric semiconductor element 12 to the heat sink 11. The better the adhesive strength and the higher the thermal conductivity, the better. The first adhesive 15 fills surface roughness, ie, scratches, generated on the adhesive surfaces of the heat sink 11 and the housing 14, so that both adhesive surfaces are in intimate surface contact, thereby improving heat transfer efficiency.

The cool block mounting step (S2) is a step before the cool block 13 is fixed to the heat absorbing surface of the thermoelectric semiconductor element 12. The stopper 14b of the housing 14, which will be described later, is a step of the cool block 13. It is to be fixed when (13a) is pressed.

Accordingly, the first adhesive 15 is applied to at least one side of the heat absorbing surface of the thermoelectric semiconductor element 12 and the adhesive surface of the cool block 13 adhered thereto. In a practical embodiment, the first adhesive 15 uses the aforementioned two-component thermal conductive grease, and is coated with 0.1 mm on each side of the thermoconductor element 12 and the cool block 13 so that they can be bonded. (12) The cool block 13 was mounted on the heat absorbing surface.

The heat sink 11 and the housing 14 are attached to the heat sink 11 by attaching the housing 14 having the storage chamber 14a to the heat sink 11. 12) is the entire process for storing.

To this end, the housing 14 is adhesively fixed to the heat sink 11 so as to accommodate and fix the thermoelectric semiconductor element 12 and the cool block 13 in the inner storage chamber 14a of the housing 14. The second adhesive 16 is applied to any one side or both sides of the adhesive face of the housing 14 and the adhesive face of the heat sink 11. Preferably, the second adhesive 16 is applied to both sides.

The second adhesive 16 is sufficiently coated on the lead wire 12a so that air does not enter the lead wire 12a of the thermoelectric semiconductor element 12.

Here, the second adhesive 16 used may be applied as long as all of the conditions that can achieve the present invention, which will belong to the scope of the present invention.

The second adhesive 16 applied to the practical example of the present invention used a one-component thermosetting epoxy. The one-component thermosetting epoxy has physical properties of 40,000 to 45,000 cps, a tension of 2,100 to 2,500 psi, a thermal conductivity of 0.1 to 0.3 watt / mk, a hardness of 75 to 85 A, and a water absorption of 0.1 to 0.5%, and 0.3 mm on both sides of the adhesive surface. Applied. It is good to use the thing which removed the bubble existing in itself.

In order to make the one-component thermosetting epoxy having the above properties, experiments were carried out using many adhesives including epoxy, but after repeated failures, the one-component thermosetting epoxy having the above properties was found and succeeded. In particular, the values of the viscosity and the tension are very sensitive to the formation of a through hole for air to be discharged when the storage chamber 14a is heated, and to perform a condition in which the air hole is immediately closed after the air expands and is discharged from the storage chamber 14a. It was hard.

Meanwhile, when the heat sink 11 and the housing 14 are bonded as described above, when the portion of the nut 17 inserted into the housing 14 and protruding to one side is inserted into the hole prepared in the heat sink 11, the heat sink is used. The assembly position of the 11 and the housing 14 is set automatically.

The heat sink and the housing fixing step (S4) and the heat sink (11) bonded in the step (S3) while pressing the cool block 13 mounted on the heat absorbing surface of the thermoelectric semiconductor element 12 in the step (S2) It is a process of pressing the housing 14 and fixing it closely.

To this end, according to the present invention, the housing 14 and the heat sink 11 are penetrated by the bolt B as shown in FIG. 8, and the nut 14 is fastened to the penetrating portion thereof to the housing 14 and the heat sink 11. Press to fix it. Since the bolt B penetrates a hole formed in the nut 17 and the heat sink 11 inserted into the housing 14, the heat sink 11 and the housing 14 may be press-fixed.

When the heat sink 11 and the housing 14 are press-bonded and fixed using the bolt B as described above, the housing 14 and the heat sink 11 are firmly fixed during the drying process described later. Since the stopper 14b of (14) presses the step 13a of the cool block 13, the cool block 13 is pressed against the heat absorbing surface of the thermoelectric semiconductor element 12 and firmly fixed.

In the filling of the second adhesive 16 (S5), the second adhesive 16 is filled in the gap C formed between the housing 14 and the cool block 13 to fill the housing 14 and the cool block 13. It is a process of adhering.

As the second adhesive 16 used herein, the one-component thermosetting epoxy described above was used.

The adhesive drying step (S6) may be referred to as the core process of the present invention. This is a new method that has not been tried before.

In other words, the air present in the storage chamber 14a evaporates to the outside when the assembly having a unit form is put into a drying chamber and heated to dry the first adhesive 15 and the second adhesive 16 after the steps S1 to S5. Process.

More specifically, the assembly is put into a drying chamber and then heated for 1 to 3 hours until the drying chamber temperature is 60 ℃ to 100 ℃. In a practical example, it was heated for 2 hours until it reached 80 degreeC.

In the initial stage of heating, the temperature gradually rises, so that it takes about 30 minutes until the temperature of the drying chamber reaches 80 ° C. In this process, the second adhesive 16 in the soft gel state gradually evaporates moisture, Done. After that, the temperature of the drying chamber is maintained at 80 ° C. until the drying is completed. Since the heat sink 11 and the cool block 13 made of aluminium material have excellent transfer performance, they are heated faster than the air temperature of the drying chamber. As a result, the temperature of the storage chamber 14a of the housing 14 which accommodates or contacts them rises rapidly.

This phenomenon is the same as the rail temperature of a train made of metal rises to 60 ° C even if the air temperature is not higher than 35 ° C in summer.

Therefore, the temperature of the storage chamber 14a of the housing 14 by the heated heat sink 11 and the cool block 13 is higher than the temperature of the drying chamber, and as time passes, the temperature rises further and eventually the second adhesive 16 The one-component thermosetting epoxy () is kneaded with an increase in temperature. At the same time, the air present in the storage chamber 14a of the housing 14 gradually heats up and starts to expand.

As the heating of the storage chamber 14a proceeds, the air present in the storage chamber 14a expands to reach an evaporation point. When the air evaporates rapidly, the evaporated air may form the second adhesive 16 in the dough state. It begins to pierce and evaporate to the outside. At this time, since the second adhesive 16 maintains the dough state, the second adhesive 16 maintains the bonded state between the filled gaps C. This phenomenon can be easily understood empirically, e.g., through the process of pulverizing the dough and air discharge.

When the evaporation of air in the storage chamber 14a is reached, the drying chamber is no longer heated, and evaporation of air does not proceed in the storage chamber 14a. Therefore, since the passage through which air escapes is automatically closed in the second adhesive 16 filled in the gap C, the storage chamber 14a is in a vacuum state.

In fact, in the embodiment, the drying chamber was heated for 30 minutes to reach 80 ° C., and the drying process was carried out to maintain the 80 ° C. state for 1 hour and 30 minutes. The air completely evaporated in the storage chamber 14a.

In order to obtain the experimental results of the above embodiment, the physical properties of the one-component thermosetting epoxy are important. The higher the heating temperature of the drying chamber, the shorter the drying time, and the lower the longer the drying time.

If the air is present in the storage chamber 14a despite heating the storage chamber 14a as described above, since the moisture is evaporated in the air, the moisture is nearly zero, which is a conventional disadvantage of the thermoelectric semiconductor element 12. Dew condensation can be overcome to have a significant difference from the conventional unit manufacturing method.

The adhesive drying step S6 is a process of heating the storage chamber 14a of the housing 14 and evaporating the air existing in the storage chamber 14a by the heated heat, and the heated air is a gap C. It is to be evaporated to the outside through the second adhesive 16 filled in between. In this case, the second adhesive 16 must satisfy the condition of closing immediately after the air is discharged without being damaged when the air is evaporated. This is a very important part in realizing the present invention.

In order to achieve the present invention, the experiment was conducted using a large number of adhesives including epoxy to apply the second adhesive 16, but after successive failures, a single-component thermosetting epoxy having the above properties was found and succeeded. In particular, the values of the viscosity and the tension are very sensitive to the formation of a hole for evaporation of air when the storage chamber 14a is heated, and to react to a condition in which the air hole is immediately closed after the air is expanded and discharged from the storage chamber 14a. It was hard.

When the drying of the unit assembly is completed as described above, the assembly is naturally cooled (S7) to complete the manufacturing method of the present invention.

Here, the housing 14 for accommodating and fixing the components of the present invention therein is a storage chamber 14a penetrates to accommodate the thermoelectric semiconductor element 12, and the coolant is provided on the inner wall of the storage chamber 14a. The stopper 14b protrudes so that the block 13 can be locked. The stopper 14b is preferably formed around the entire inner wall, and may be formed at a position that can accommodate all the thicknesses of the standardized thermoelectric semiconductor element 12. For example, as shown in FIG. 11, even if a gap S is generated between the step 13a of the cool block 13 and the stopper 14b of the storage chamber 14a because the thickness of the thermoelectric semiconductor element 12 is thin, the present invention is completely absent. It doesn't matter. This is because the cool block 13 in contact with the thermoelectric semiconductor element 12 is strongly fixed by the second adhesive 16 made of one-component thermosetting epoxy, so that the occurrence of the gap S is not a problem at all.

The housing 14 has a guide member 14c extended to an upper edge of the storage chamber 14a to fill the second adhesive 16 fixing the cool block 13, and an outer wall of the guide member 14c. The reinforcing rib 14d is formed in this.

The housing 14 is preferably a mixture of 80% by weight ABS and 20% by weight glass. The reason why the glass is mixed in the housing 14 is that the glass adheres well to the second adhesive 16 and is resistant to deformation of the injection by heat.

In addition, when the housing 14 is manufactured by the injection method, the nut 17 is inserted into the rim thereof. The nut 17 is used for fastening when another object is fastened and assembled to the unit 10 or when the unit 10 is fixed to another object.

On the other hand, the configuration of the thermoelectric semiconductor device 12 unit manufactured by the present invention, the housing 14 for accommodating the thermoelectric semiconductor device 12 in the vacuum chamber 14a, the thermoelectric housed in the housing 14 The heat sink 11 is fixed to the housing 14 in surface contact with one side surface of the semiconductor element 12 to dissipate high heat generated by the thermoelectric semiconductor element 12, and the storage chamber 14a of the housing 14. Cool block 13, which is fixed in surface contact with the other side surface of the thermoelectric semiconductor element 12 accommodated in the heat transfer semiconductor element 12 to the outside, one side surface of the thermoelectric semiconductor element 12 The first adhesive 15 for fixing the cool block 13 to the other side of the heat sink 11, the one side surface of the heat sink 11 and the housing 14, and the housing 14 and the cool block 13. Of the second adhesive 16 and the housing 14 which are filled between Includes; Duri the nut 17 that is inserted into the insert injection method.

The heat sink 11 is in close contact with the heat dissipation surface of the thermoelectric semiconductor element 12 to perform a heat dissipation function, and an aluminum material is used.

The cool block 13 is in close contact with the heat absorbing surface of the thermoconductor element 12 and transmits and cools the low heat generated in the thermoconductor element 12 to a target object or a target space, and uses a material having excellent heat transfer. Aluminum material is good. The cool block 13 has a step 13a formed at one end of the body so that the cool block 13 can be fixed to the stopper 14b protruding from the storage chamber 14a.

As described above, the present invention for manufacturing a thermoelectric semiconductor device unit heats a storage room of a housing in which a thermoelectric semiconductor device is stored, and evaporates air to make the interior of the storage chamber into a vacuum state, thereby condensing moisture according to a temperature change, which is a conventional problem. The dew condensation phenomenon around the thermoelectric semiconductor device can be eliminated.

In addition, by making the storage chamber in a vacuum state, the phenomenon of cold and hot air coexisting around the thermoelectric element is basically blocked to increase the cooling performance, and the cool block can be easily assembled regardless of the thickness of the thermoelectric semiconductor element.

Claims (5)

A housing 14 accommodating the thermoelectric semiconductor element 12 in the storage chamber 14a in a vacuum state; A heat sink 11 fixed to the housing 14 in surface contact with one side of the thermoelectric semiconductor element 12 accommodated in the housing 14 to dissipate high heat generated by the thermoelectric semiconductor element 12; A cool block (13) which is fixed in surface contact with the other surface of the thermoelectric semiconductor element (12) accommodated in the storage chamber (14a) of the housing (14) to transfer low heat generated from the thermoelectric semiconductor element (12) to the outside; A first heat sink 11 is fixed to one side of the thermoelectric semiconductor element 12 and the cool block 13 is fixed to the other side, and the first component is composed of a two-component thermal conductive grease having a thermal conductivity of 0.85 Watts / mk to 1.09 Watts / mk. Adhesive 15; One side of the heat sink 11 and the housing 14 are adhered to each other, and filled between the housing 14 and the cool block 13 to fix them so that the storage compartment of the housing is in a vacuum state, and has a viscosity of 40,000 to 45,000 cps, A second adhesive 16 composed of a one-component heat conductive grease having a tension of 2,000 to 2,600 psi, a thermal conductivity of 0.1 to 0.3 watt / mk, a hardness of 75 to 85A, and a water absorption of 0.1 to 0.5%; And And a nut (17) inserted into the edge of the housing (14) by an insert injection method. delete delete delete delete

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