KR20040095351A - Image display apparatus and its manufacturing method - Google Patents

Abstract

A first substrate 10 having an image display surface and a second substrate disposed opposite to each other with a gap therebetween and provided with a plurality of electron sources 18 for exciting the image display surface are provided. Between the 1st and 2nd board | substrate, the some spacer 30a, 30b which supports the atmospheric pressure load which acts on these board | substrates is provided. Between the distal end portion of the spacer on the second substrate side and the second substrate, a conductor 33 for repelling the electron beam emitted from the electron source is provided.

Description

Image display device and manufacturing method thereof {IMAGE DISPLAY APPARATUS AND ITS MANUFACTURING METHOD}

In recent years, there has been a demand for a high-definition broadcast or a high resolution image display device accompanying it, and more stringent performance is demanded for its screen display performance. In order to achieve these requirements, planarization and high resolution of the screen surface are essential, and at the same time, light weight and thinning must be achieved.

As an image display apparatus that satisfies the above requirements, for example, a flat panel display apparatus such as a field emission display (hereinafter referred to as FED) has attracted attention. This FED has a 1st board | substrate and a 2nd board | substrate arrange | positioned facing a predetermined clearance gap, and these board | substrates are mutually joined together via the side wall of a rectangular frame type, and comprise the vacuum casing. A phosphor layer is formed on the inner surface of the first substrate, and a plurality of electron emission elements are provided on the inner surface of the second substrate as electron sources for exciting the phosphor layer to emit light.

Moreover, in order to support the atmospheric pressure load applied to a 1st board | substrate and a 2nd board | substrate, several spacers are arrange | positioned as a support member between these board | substrates. In this FED, when an image is displayed, an anode voltage is applied to the phosphor layer and the electron beam emitted from the electron emitting element is accelerated by the anode voltage to collide with the phosphor layer to emit a phosphor to display an image.

In such an FED, the size of the electron emission element is in micrometer order, and the distance between the first substrate and the second substrate can be set in millimeter order. For this reason, compared with the cathode ray tube (henceforth CRT) currently used as a display of a television or a computer, it becomes possible to achieve high resolution, light weight, and thinning of an image display apparatus.

As described above, in order to obtain practical display characteristics, it is preferable to set the anode voltage to several Hz or more using a phosphor such as a normal CRT. However, the gap between the first substrate and the second substrate cannot be made large from the viewpoints of the resolution, the characteristics of the support member, the manufacturability, and the like, and needs to be set to about 1 to 2 mm. Therefore, the secondary electrons and the reflected electrons generated when the electrons emitted from the electron emission element collide with the fluorescent surface formed on the first substrate collide with the spacers disposed between the substrates, and as a result, the spacers are charged. At an acceleration voltage in the FED, the spacer is generally positively charged, and the electron beam emitted from the electron emitting element is attracted to the spacer and is displaced from the original trajectory. Therefore, there is a problem that miss landing of the electron beam occurs with respect to the phosphor layer, resulting in deterioration of color purity of the display image.

In order to reduce the suction of the electron beam by such a spacer, it is considered to conduct a conductive treatment to all or part of the surface of the spacer to push out the charging. However, in the case where the spacer itself is subjected to conductive treatment, reactive current flowing from the first substrate to the second substrate via the spacer increases, causing an increase in temperature or an increase in power consumption.

The present invention relates to an image display device having an opposingly disposed substrate, a plurality of electron sources arranged on an inner surface of one substrate, and a manufacturing method thereof.

1 is a perspective view showing an SED according to an embodiment of the present invention.

Fig. 2 is a perspective view of the SED broken along line II-II in Fig. 1;

3 is an enlarged cross-sectional view of the SED;

Fig. 4 is an enlarged cross sectional view showing a main part of an SED according to a second embodiment of the present invention.

Fig. 5 is an enlarged cross-sectional view showing the main part of the SED according to the third embodiment of the present invention.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object thereof is to provide an image display apparatus and a method of manufacturing the image having improved image quality by preventing the deviation of the trajectory of the electron beam without causing an increase in temperature or an increase in power consumption.

In order to achieve the above object, the image display device according to the aspect of the present invention is disposed to face the first substrate having an image display surface and the first substrate with a gap therebetween, and emits electrons to provide the image display surface. A second substrate provided with a plurality of electron sources to be excited, a plurality of spacers disposed between the first and second substrates to support atmospheric loads acting on the first and second substrates, and the second of the spacers A conductor is disposed between the distal end portion of the substrate side and the second substrate to repel an electron beam emitted from the electron source.

Moreover, the manufacturing method of the image display apparatus which concerns on another aspect of this invention is arrange | positioned facing the 1st board | substrate which has an image display surface, and the said 1st board | substrate, and discharges an electron and excites the said image display surface, and excites it. And a second substrate provided with a plurality of electron sources, and a plurality of spacers disposed between the first and second substrates to support atmospheric pressure loads acting on the first and second substrates. To

A conductor is disposed between a predetermined position of the second substrate and the tip portion of the spacer on the second substrate side, and the spacer is arranged such that the tip portion of the spacer on the second substrate side contacts the conductor by sandwiching the conductor. In one state, the first and second substrates are bonded to each other.

According to the image display device configured as described above, the electrons emitted from the electron source located near the spacer are once repulsed by the electric field formed by the conductor and orbit in the direction away from the spacer, and this time is sucked into the spacer and is applied to the spacer. Orbit in the direction of approach. By this repulsion and suction, the deviation of the orbit of the electrons is canceled, and the electrons emitted from the electron source finally reach the target position on the image display surface. Thereby, the deterioration of the color purity resulting from the former miss landing can be reduced, and the image display apparatus with improved image quality can be obtained.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment which applied this invention to the surface conduction type electron emission device (henceforth SED) which is a kind of FED as a planar image display apparatus is demonstrated in detail, referring drawings.

As shown in Figs. 1 to 3, this SED is a transparent insulating substrate having a first substrate 10 and a second substrate 12 each formed of a glass plate of a rectangular shape, and these substrates are about 1.0 to 2.0 mm. They are arranged opposite to each other with a gap of. The second substrate 12 is formed to have a size slightly larger than that of the first substrate 10. And the 1st board | substrate 10 and the 2nd board | substrate 12 are joined by the peripheral part through the rectangular frame-shaped side wall 14 which consists of glass, and comprise the flat rectangular vacuum casing 15. As shown in FIG.

On the inner surface of the first substrate 10, a phosphor screen 16 as an image display surface is formed. The phosphor screen 16 is configured by arranging phosphor layers (R, G, B) and black light shielding layers 11 that emit red, blue, and green light due to the collision of electrons. These phosphor layers R, G, and B are formed in a stripe shape or a dot shape. On the phosphor screen 16, a metal bag 17 made of aluminum or the like and a getter film (not shown) are formed. In addition, a transparent conductive film made of, for example, ITO or the like may be provided between the first substrate 10 and the phosphor screen.

The inner surface of the second substrate 12 is provided with a plurality of surface conduction electron emission elements 18 each emitting an electron beam as an electron source for exciting the phosphor layer of the phosphor screen 16. These electron emission elements 18 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. Each electron emission element 18 is composed of an electron emission portion (not shown), a pair of element electrodes for applying a voltage to the electron emission portion, and the like. On the inner surface of the second substrate 12, a plurality of wirings 21 for supplying electric potential to the electron emission element 18 are provided in a metric form, and the ends thereof are drawn out to the outside of the vacuum casing 15.

The side wall 14 which functions as a joining member is sealed to the periphery of the 1st board | substrate 10 and the periphery of the 2nd board | substrate 12 by the sealing adhesive 20, such as low melting glass and a low melting metal, for example. It adheres and the 1st board | substrate and the 2nd board | substrate are bonded together.

2 and 3, the SED includes a spacer assembly 22 disposed between the first substrate 10 and the second substrate 12. The spacer assembly 22 includes a plate-shaped grid 24 and a plurality of columnar spacers which are integrally provided on both sides of the grid.

In detail, the grid 24 has a first surface 24a facing the inner surface of the first substrate 10 and a second surface 24b facing the inner surface of the second substrate 12. It is arranged parallel to. In the grid 24, a plurality of electron beam through holes 26 and a plurality of spacer opening holes 28 are formed by etching or the like. The electron beam passing holes 26 functioning as the opening holes in the present invention are respectively arranged to face the electron emission element 18 and pass through the electron beam emitted from the electron emission element. In addition, the spacer opening holes 28 are located between the electron beam passing holes 26 and arranged at predetermined pitches.

The grid 24 is formed of, for example, an iron-nickel-based metal plate at a thickness of 0.1 to 0.25 mm, and an oxide film made of elements constituting the metal plate on its surface, for example, Fe ₃ O ₄ , NiFe _3. An oxide film made of O ₄ is formed. On the surface of the grid 24, a high resistance film obtained by coating and firing a high resistance material made of glass or ceramic is formed, and the resistance of the high resistance film is set to E + 8 Ω / square or more.

The electron beam passing hole 26 is formed into a rectangle of, for example, 0.15 to 0.25 mm × 0.15 to 0.25 mm, and the spacer opening hole 28 is formed into a circle of, for example, about 0.2 to 0.5 mm in diameter. . In addition, the high resistance film mentioned above is formed also in the wall surface of the electron beam passage hole 26 provided in the grid 24.

On the 1st surface 24a of the grid 24, the 1st spacer 30a is piled up and integrated in each spacer opening hole 28, and is installed. An indium layer is applied to the extended end of each first spacer 30a to form a relaxation layer 31 that mitigates the variation in spacer height. The extending end of each of the first spacers 30a is formed on the inner surface of the first substrate 10 via the relaxation layer 31, the getter film, the metal back 17, and the light shielding layer 11 of the phosphor screen 16. I'm in contact. The relaxation layer 31 does not have any influence on the trajectory of the electron beam, and is not limited to metal as long as it has an appropriate hardness to alleviate the height unevenness of the spacer. In addition, the black shading layer 11 of the metal back 17 and the phosphor screen 16 also has the effect of alleviating the height nonuniformity of a spacer, and when this can obtain sufficient height nonuniformity alleviation effect, the relaxation layer 31 is carried out. You do not need to install it.

On the second surface 24b of the grid 24, the second spacers 30b are integrally installed so as to overlap each spacer opening hole 28, and the extended end thereof contacts the inner surface of the second substrate 12. have. The extended end of each second spacer 30b is located on the wiring 21 provided on the inner surface of the second substrate 12, and the conductor 33 is disposed between the wiring and the extended end of the second spacer. Is installed. The conductor 33 is formed in a substantially similar shape to the extended end of the second spacer 30b, and its thickness, that is, the height along the direction orthogonal to the second substrate 12 is set to 120 µm, for example.

As described later, the conductor 33 acts to repel the electron beam emitted from the electron emission element 18 in a direction spaced apart from the second spacer 30b. The conductor 33 is made of, for example, a high melting point metal such as platinum, tungsten, iridium, rhenium, osmium or ruthenium, these alloys, or conductive glass containing these metals. As the conductor 33, metals such as indium, aluminum, silver, and copper can also be used. However, when the discharge occurs, if the melting temperature is low, there is a possibility that the metal melts and does not exhibit its original function. It is preferable to use.

Although the shape of the conductor 33 is not specifically limited, It is preferable that the corner part is rounded in consideration of discharge. The height of the conductor 33 is arbitrarily set in consideration of the repulsive force applied to the electron beam, that is, the trajectory correction amount of the electron beam.

Each of the first and second spacers 30a and 30b is formed in a tapered shape having a narrow end diameter from the grid 24 side toward the extension end portion. For example, each of the first spacers 30a is formed to have a diameter of the base end portion of about 0.4 mm, an extension end portion of about 0.3 mm, and a height of about 0.6 mm of the base end portion located on the grid 24 side. Further, each of the second spacers 30b is formed with a diameter of about 0.4 mm, a diameter of an extended end of about 0.25 mm, and a height of about 0.8 mm in the base end portion located on the grid 24 side. In this way, the height of the first spacer 30a is formed lower than the height of the second spacer 30b, and the height of the second spacer is set to about 4/3 times or more with respect to the height of the first spacer.

The surface resistance of the 1st spacer 30a and the 2nd spacer 30b is 5 * 10 <^{13> (} ohm). Each spacer opening hole 28 and the first and second spacers 30a and 30b are aligned with each other, and the first and second spacers are integrally connected to each other via the spacer opening hole 28. Thereby, the 1st and 2nd spacers 30a and 30b are integrally formed with the grid 24 in the state which pinched the grid 24 from both surfaces.

The spacer assembly 22 configured as described above is disposed between the first substrate 10 and the second substrate 12. The first and second spacers 30a and 30b are in contact with the inner surfaces of the first substrate 10 and the second substrate 12 to support atmospheric loads acting on these substrates, thereby maintaining a predetermined distance between the substrates. Keeping up.

As shown in Fig. 2, the SED includes a voltage supply section 50 for applying a voltage to the grid 24 and the metal back 17 of the first substrate 10. As shown in Figs. The voltage supply part 501 is connected to the grid 24 and the metal bag 17, respectively, and applies a voltage of 12 kV to the grid 24 and 10 kV to the metal bag 17, for example. That is, the voltage applied to the grid 24 is set higher than the voltage applied to the first substrate 10, and is set within 1.25 times, for example.

In the SED, when displaying an image, an anode voltage is applied to the phosphor screen 16 and the metal bag 17 to accelerate the electron beam B emitted from the electron emission element 18 by the anode voltage, thereby reducing the phosphor screen. To (16). As a result, the phosphor layer of the phosphor screen 16 is excited to emit light to display an image.

Next, the manufacturing method of the SED comprised as mentioned above is demonstrated. When manufacturing the spacer assembly 22, first, a grid 24 of predetermined dimensions, first and second molds of rectangular plate shape (not shown) having approximately the same dimensions as the grid are prepared. In this case, after degreasing, washing, and drying a thin plate of 0.12 mm thick made of Fe-50% Ni, an electron beam through hole 26 and a spacer opening hole 28 are formed by etching to form a grid 24. Thereafter, the entirety of the grid 24 is oxidized by an oxidation process, and an insulating film is formed on the surface of the grid including the inner surface of the electron beam passage hole 26 and the spacer opening hole 28. In addition, a high resistance film is formed by spray coating, drying and baking a liquid in which fine particles of tin oxide and antimony oxide are dispersed on the insulating film.

Each of the first and second molds has a plurality of through holes corresponding to the spacer opening holes 28 of the grid 24. In the first mold and the second mold, resins thermally decomposed by heat treatment are coated on at least inner surfaces of the plurality of through holes corresponding to the spacer opening holes 28.

Then, the first mold is brought into close contact with the first surface 24a of the grid in a state where each through hole is positioned so as to be aligned with the spacer opening hole 28 of the grid 24. Similarly, the second mold is brought into close contact with the second surface 24b of the grid with each through hole positioned so as to align with the spacer opening hole 28 of the grid 24. And these 1st metal mold | die, grid 24, and 2nd metal mold | die are mutually fixed using the clamper etc. which are not shown in figure.

Next, for example, a paste-shaped spacer forming material is supplied from the outer surface side of the first mold to form spacers in the through holes of the first mold, the spacer opening holes 28 of the grid 24 and the through holes of the second mold. Fill the material. As the spacer forming material, a glass paste containing at least an ultraviolet curable binder (organic component) and a glass filler is used.

Subsequently, the filled spacer forming material is irradiated with ultraviolet (UV) radiation as radiation from the outer surface sides of the first and second molds to cure the spacer forming material. After that, you may thermoset as needed. Next, the resin applied to each of the transmission holes of the first and second molds is thermally decomposed by heat treatment to form a gap between the spacer forming material and the mold, and the first and second molds are peeled off from the grid 24.

Subsequently, the grid 24 filled with the spacer forming material is heat-treated in a heating furnace to disperse the binder from the spacer forming material, and then the spacer forming material is fired at about 500 to 550 ° C. for 30 minutes to 1 hour. . Thereby, the spacer assembly 22 in which the first and second spacers 30a and 30b are formed on the grid 24 can be obtained.

On the other hand, the second substrate on which the first substrate 10 on which the phosphor screen 16 and the metal back 17 are provided, the electron emission element 18 and the wiring 21 are provided, and the sidewalls 14 are bonded to each other. Prepare (12).

Subsequently, the conductive paste is printed on the wiring 21 of the second substrate 12 so as to have a thickness of 120 占 퐉 in a substantially similar shape to the distal end of the second spacer 30b, and then dried and baked to form the conductive paste on the wiring 21. The conductor 33 is formed in a predetermined position. Further, indium powder for forming the height relaxation layer 31 is applied to the extending end of each first spacer 30a.

Next, the spacer assembly 22 configured as described above is positioned on the second substrate 12. At this time, the spacer assembly 22 is positioned so that the extended ends of the second spacers 30b respectively contact the conductors 33. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are disposed in the vacuum chamber to evacuate the vacuum chamber, and then the first substrate is passed through the side wall 14 to the second substrate. Bond to. At the same time, the indium powder disposed at the extended end of the first spacer 30a is melted and crushed by the first substrate 10 to correct the height. Thereby, the SED provided with the spacer assembly 22 is manufactured.

According to the SED configured as described above, as shown in FIG. 3, the electron beam B emitted from the electron emission element 18 located near the second spacer 30b is extended and the second end of the second spacer 30b. It repulses by the electric field which the conductor layer 33 provided between the board | substrates 12 forms, and it goes to the electron beam through-hole 26, orbiting in the direction falling from a 2nd spacer. Thereafter, the electron beam B is sucked into the charged second spacer 30b and the first spacer 30a and orbits in the direction approaching these spacers. The repulsion and suction offset the orbital deviation of the electron beam B, and the electron beam B emitted from the electron emission element 18 finally reaches the target phosphor layer of the phosphor screen 16.

Specifically, the smaller the distance from the electron emitting element to the spacer side is, the larger the amount the electron beam moves to the spacer side. On the contrary, when the distance to the spacer side is sufficiently large, the amount to which the electron beam moves to the spacer side is negligible. The movement phenomenon of the electron beam is generated when the secondary electrons and the reflected electrons generated at the fluorescent surface collide with the spacers to charge the spacers. At this time, the secondary electron emission coefficient at the spacer surface becomes one or more from the acceleration voltage used in the SED, and the spacer sidewall is positively charged to attract the electron beam to the spacer side.

In the present embodiment, the conductor 33 is provided between the end of the spacer having a relatively small electron velocity on the second substrate side and the second substrate, and the conductor 33 has an electric field in a direction in which the electron beam repels the spacer. To form. By controlling the height of the conductor 33, the amount of repulsion can be controlled by changing the strength of the electric field. In the present embodiment, the charge of the spacer is not pushed out, but the orbital deviation of the electron beam is offset by suction by the spacer and repulsion by the conductor 33. Therefore, according to the said SED, it is not necessary to provide a complicated mechanism for converging electron beams, such as an electron gun in a CRT.

As described above, according to the above-described SED, even when the first and second spacers 30a and 30b are charged and the electron beam B is attracted by these spacers, the deviation of the trajectory of the electron beam can be prevented. Thereby, the mis-landing of the electron beam B can be prevented, As a result, deterioration of color purity can be reduced and image quality can be improved.

In addition, in the case where direct conduction treatment is performed on all or part of the surface of the spacer, the reactive current flowing from the first substrate to the second substrate via the spacer increases, causing an increase in temperature and an increase in power consumption. In addition, this conductive processing part may generate a gas during the operation of the SED, and may cause an ion bombardment of an electron source located near the spacer. In contrast, according to the present embodiment, the trajectory of the electron beam can be easily controlled by changing the electric field around the spacer by the conductor 33 without causing an increase in reactive current, an increase in temperature or an increase in power consumption, or ion collision. Can be.

The SED which concerns on this embodiment and the SED which is not provided with the conductor 33 mentioned above are prepared, and the movement amount of an electron beam is compared. As a result, in the SED without a conductor, the electron beam moved about 120 µm toward the spacer side, while in the SED according to the present embodiment, the amount of movement of the electron beam became approximately zero, and the color purity of the display image was also improved.

Further, according to the SED, the grid 24 is disposed between the first substrate 10 and the second substrate 12, and the height of the first spacer 30a is lower than the height of the second spacer 30b. Formed. As a result, the grid 24 is located closer to the first substrate 10 side than the second substrate 12. Therefore, even when discharge is generated from the first substrate 10 side, the breakage of the discharge of the electron emission element 18 provided on the second substrate 12 by the grid 24 can be suppressed. Therefore, it is possible to obtain an SED having excellent pressure resistance against discharge and improved image quality.

Further, according to the SED of the above configuration, the height of the first spacer 30a is made lower than that of the second spacer 30b so that the voltage applied to the grid 24 is made larger than the voltage applied to the first substrate 10. Even in this case, electrons generated from the electron emission element 18 can be reliably reached to the phosphor screen side.

In addition, even when there is a height unevenness in the plurality of first spacers 30a, the variation can be absorbed by the height alleviating layer 31, so that the plurality of first spacers and the first substrate 10 can be reliably contacted. Therefore, it becomes possible to hold | maintain the space | interval between the 1st board | substrate 10 and the 2nd board | substrate 12 uniformly over substantially the whole area | region by the 1st and 2nd spacers 30a and 30b.

Next, the SED which concerns on 2nd Embodiment of this invention is demonstrated. As shown in Fig. 4, according to the second embodiment, the conductor 33 is formed in a shape similar to that of the extended end of the second spacer 30b by metal or alloy. For example, the conductor 33 is formed of a metal plate having a thickness of 200 μm from Fe-50% Ni, and the wiring 21 of the second substrate 12 is formed by a fixed layer 40 made of a conductive fleet, a conductive adhesive, or the like. It is fixed on). The spacer assembly 22 is disposed between the first and second substrates 10 and 12 in a state where the extended end of each second spacer 30b is in contact with the conductor 33.

In addition, the other structure is the same as that of 1st Embodiment mentioned above, the same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted.

When manufacturing the SED concerning 2nd Embodiment comprised as mentioned above, the 1st and 2nd board | substrate 10 and 12 and the spacer assembly 22 are formed by the process similar to 1st Embodiment. At this time, the height of the first spacer 30a was 0.2 mm and the height of the second spacer 30b was 1.0 mm.

Subsequently, a fixed layer 40 is formed by applying a conductive adhesive having a thickness of 5 µm to a predetermined position on the wiring 21 of the second substrate 12 in a substantially similar shape to the tip portion of the second spacer 30b. Then, after loading the conductor 33 having a thickness of 200 μm made of Fe-50% Ni on the fixed layer 40, the fixed layer is dried to fix the conductor 33 on the wiring.

After that, the spacer assembly 22 is positioned on the second substrate 12 as in the first embodiment. At this time, the spacer assembly 22 is positioned so that the extended ends of the second spacers 30b respectively contact the conductors 33. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are disposed in the vacuum chamber to evacuate the vacuum chamber, and then the first substrate is passed through the side wall 14 to the second substrate. Bond to. Thereby, SED is manufactured.

According to the SED of the above structure, the effect similar to 1st Embodiment can be acquired. In addition, in 2nd Embodiment, the fixed layer 40 which fixed the conductor 33 to the wiring 21 can be used as a correction layer which correct | amends the height nonuniformity of a spacer. Therefore, high processing accuracy of the spacer is not required, and the manufacturing cost of the spacer can be reduced.

Moreover, the SED which concerns on 2nd Embodiment and the SED which is not provided with the conductor 33 were prepared, and the movement amount of the electron beam was compared. As a result, in the SED without a conductor, the electron beam was sucked about 150 µm toward the spacer side, while in the SED according to the present embodiment, the amount of movement of the electron beam became almost zero, and the color purity of the display image was also improved.

Next, the SED which concerns on 3rd Embodiment of this invention is demonstrated. As shown in Fig. 5, according to the third embodiment, the conductor 33 is formed in a shape similar to that of the extended end of the second spacer 30b by metal or alloy. For example, the conductor 33 is formed by a metal plate having a thickness of 200 μm from Fe-50% Ni, and extends the second spacer 30b by a fixed layer 42 made of an insulating adhesive, for example, fleet glass. It is fixed at the end. The spacer assembly 22 includes the first and second substrates 10 in a state in which the extended end of each of the failed-attached second spacers 30b of the conductor 33 contacts the wiring 21 on the second substrate 12. , 12).

In addition, the other structure is the same as that of 1st Embodiment mentioned above, the same code | symbol is attached | subjected to the same part, and the detailed description is abbreviate | omitted.

When manufacturing the SED concerning 3rd Embodiment comprised as mentioned above, the 1st and 2nd board | substrates 10 and 12 and the spacer assembly 22 are formed by the process similar to 1st Embodiment. At this time, the height of the first spacer 30a was 0.2 mm and the height of the second spacer 30b was 1.0 mm.

Subsequently, a fleet glass is applied to the distal end of each of the second spacers 30b of the spacer assembly 22 to form a fixed layer 42. After loading the conductor 33 having a thickness of 200 µm made of Fe-50% Ni on the fixed layer 42, the fixed layer was dried and fired to fix the conductor 33 to the distal end of the second spacer 30b. do.

Next, the spacer assembly 22 is positioned on the second substrate 12. At this time, the spacer assembly 22 is positioned so that the extended ends of the second spacers 30b to which the conductors 33 are fixedly attached are located on the wirings 21 of the second substrate 12, respectively. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are disposed in the vacuum chamber to evacuate the vacuum chamber, and then the first substrate is passed through the side wall 14 to the second substrate. Bond to. Thereby, SED is manufactured.

According to the SED comprised as mentioned above, the effect similar to 1st Embodiment can be acquired. In 3rd Embodiment, the fixed layer 42 which fixes the conductor 33 to the front-end | tip of a 2nd spacer can be used as a correction layer which correct | amends the height nonuniformity of a spacer. Therefore, high processing accuracy of the spacer is not required, and the manufacturing cost of the spacer can be reduced.

In addition, the SED according to the third embodiment and the SED in which the conductor 33 is not provided were prepared, and the amount of movement of the electron beam was compared. As a result, in the SED without a conductor, the electron beam was sucked about 150 µm toward the spacer side, while in the SED according to the present embodiment, the amount of movement of the electron beam became almost zero, and the color purity of the display image was also improved.

The present invention can be variously modified within the scope of the present invention without being limited to the above-described embodiment. For example, the present invention is not limited to an image display apparatus having a grid, but can be applied to an image display apparatus having no grid. In this case, the above-described effects can be obtained by providing a conductor between the distal end portion and the second substrate on the second substrate side of each spacer using a columnar or plate-shaped spacer formed integrally with each other.

In addition, in this invention, the diameter and height of a spacer, the dimension, material, etc. of other components can be suitably selected as needed. In the above-described embodiment, the conductor is provided between the wiring on the second substrate and the spacer end portion, but the conductor is not limited to the wiring, and is located between the second substrate and the spacer distal portion at the position avoiding the electron emission element. You just need to install it.

The electron source is not limited to the surface conduction electron emission device, and any type can be applied as long as it is an FED using an electron source that emits electrons in a vacuum such as a field emission type or a carbon nanotube.

As described above, according to the present invention, it is possible to provide an image display apparatus and a manufacturing method thereof in which image quality is improved by preventing the deviation of the trajectory of the electron beam without causing an increase in temperature or an increase in power consumption.

Claims (13)

A first substrate having an image display surface, A second substrate disposed to face the first substrate with a gap therebetween and provided with a plurality of electron sources releasing electrons to excite the image display surface; A plurality of spacers disposed between the first substrate and the second substrate to support atmospheric loads acting on the first and second substrates; And a conductor disposed between the leading end portion of the spacer on the second substrate side and the second substrate to repel an electron beam emitted from the electron source. A first substrate having an image display surface, A second substrate disposed to face the first substrate with a gap therebetween and provided with a plurality of electron sources releasing electrons to excite the image display surface; A plate-shaped grid disposed between the first substrate and the second substrate and having a plurality of openings through which electrons emitted from the electron source pass; A plurality of spacers fixed to the grid and simultaneously disposed between the first and second substrates to support atmospheric loads acting on the first and second substrates; And a conductor disposed between the distal end portion of the spacer on the second substrate side and the second substrate to repel an electron beam emitted from the electron source. The image display device according to claim 1 or 2, wherein the conductor is formed by sintering a conductive paste. The image display device according to claim 1 or 2, wherein the conductor is formed of a metal plate or an alloy plate. The image display device according to claim 4, wherein the conductor is fixed to the second substrate via a conductive fixed layer. The image display device according to claim 4, wherein the conductor is fixed to a tip portion of the spacer on the second substrate side via an insulating fixed layer. The image display device according to claim 1 or 2, wherein the conductor has a shape similar to that of the distal end portion of the spacer on the second substrate side. The image display apparatus according to claim 1 or 2, wherein the electron source is a surface conduction electron source. The plurality of wirings according to claim 1 or 2, further comprising: a plurality of wirings for supplying a potential to the electron source provided on the second substrate; Each said conductor is arrange | positioned on the said wiring, The image display apparatus characterized by the above-mentioned. The first board | substrate which has an image display surface, The 2nd board | substrate which is mutually arrange | positioned at the said 1st board | substrate, and is provided with the several electron source which discharges an electron and excites the said image display surface, The said 1st board | substrate And a plurality of spacers disposed between the second substrates and supporting the atmospheric pressure loads acting on the first and second substrates. A conductor is disposed between a predetermined position of the second substrate and a distal end portion of the spacer on the second substrate side; And the first and second substrates are bonded to each other while the spacers are arranged such that the distal end portion of the second substrate side is in contact with the second substrate by sandwiching the conductor. The manufacturing method of an image display apparatus according to claim 10, wherein the step of arranging the conductors comprises printing a conductive paste in a shape substantially similar to that of the spacer tip portion at a desired position on the second substrate, and firing the conductive paste to form the conductors. Way. 11. The method of claim 10, wherein the step of arranging the conductor forms an electrically conductive pinned layer at a desired position on the second substrate, and has a conductivity substantially similar to that of the spacer tip formed of a metal or alloy plate on the fixed layer. The manufacturing method of the image display apparatus which mounts and fixes a sieve. 11. The method of claim 10, wherein the step of arranging the conductor forms an insulating fixed layer at the tip end of the spacer on the second substrate side, and is substantially similar to the shape of the spacer tip formed of a metal or alloy plate via the fixed layer. The manufacturing method of the image display apparatus which fixes a conductor to the said front-end | tip part.