WO2003088300A1

WO2003088300A1 - Image display apparatus and its manufacturing method

Info

Publication number: WO2003088300A1
Application number: PCT/JP2003/004109
Authority: WO
Inventors: Shigeo Takenaka; Masaru Nikaido; Satoko Oyaizu; Satoshi Ishikawa
Original assignee: Kabushiki Kaisha Toshiba
Priority date: 2002-04-03
Filing date: 2003-03-31
Publication date: 2003-10-23
Also published as: TW200400530A; JP2003297265A; EP1492150A1; CN1647232A; KR20040095351A

Abstract

An image display apparatus comprises a first substrate (10) having an image display face and a second substrate opposite to the first substrate with a gap and provided with electron sources (18) which excite the image display face. Spacers (30a, 30b) which support the atmospheric load acting on these substrates are provided between the first and second substrates. A conductor (33), which repels the electron beam emitted from the electron source, is provided between the end of the spacer on the second substrate side and the second substrate.

Description

Specification

Image display device and method of manufacturing the same

Technical field

The present invention relates to an image display device having a substrate disposed to face and a plurality of electron sources disposed on the inner surface of one substrate, and a method of manufacturing the same.

Background art

In recent years, there has been a demand for a high-definition image display device for high-definition broadcasting or a high-resolution image display device associated therewith. In order to achieve these demands, it is necessary to flatten the screen surface and increase the resolution. At the same time, the weight and thickness must be reduced.

As an image display device that satisfies the above demands, for example, a flat display device such as a field emission display (hereinafter referred to as FED) has been drawing attention. This FED has a first substrate and a second substrate which are opposed to each other with a predetermined gap therebetween, and these substrates are joined to each other directly or via a rectangular frame-shaped side wall to form a vacuum. Constructs an envelope. A phosphor layer is formed on the inner surface of the first substrate, and a plurality of electron-emitting devices are provided on the inner surface of the second substrate as electron sources that excite the phosphor layer to emit light.

In addition, in order to support an atmospheric pressure load applied to the first substrate and the second substrate, a plurality of spacers are provided between the substrates as a supporting member. In this FED, when displaying an image, an anode voltage is applied to the phosphor layer and the electron emission element The electron beam emitted from the phosphor is accelerated by an anode voltage to collide with the phosphor layer, so that the phosphor emits light to display an image.

In such an FED, the size of the electron-emitting device is on the order of micrometer, and the distance between the first substrate and the second substrate can be set to the order of millimeter. For this reason, compared to the cathode ray tube (hereinafter referred to as CRT) currently used as a display for televisions and computers, the image display device has higher resolution, lighter weight, Thinning can be achieved.

In order to obtain practical display characteristics in such an image display device as described above, it is desirable to use a phosphor similar to an ordinary CRT and set the anode voltage to several kV or more. . However, the gap between the first and second substrates cannot be made too large from the viewpoint of resolution, support member characteristics, manufacturability, etc., and needs to be set to about 1 to 2 mm. There is. Therefore, secondary electrons and reflected electrons generated when the electrons emitted from the electron-emitting devices collide with the phosphor screen formed on the first substrate collide with a spacer provided between the substrates, and As a result, the spacer becomes charged. At the accelerating voltage at FED, the spacer is generally positively charged, and the electron beam emitted from the electron-emitting device is attracted to the spacer and deviates from its original orbit. Therefore, there is a problem that electron beam mis-landing occurs on the phosphor layer and the color purity of a displayed image is degraded.

In order to reduce the attraction of the electron beam by such a spacer, Therefore, it is conceivable that all or part of the spacer surface is subjected to a conductive treatment to release the charge. However, when the spacer itself is subjected to conductive treatment, the reactive current flowing from the first substrate to the second substrate via the spacer increases, causing an increase in temperature and an increase in power consumption.

Disclosure of the invention

The present invention has been made in view of the above points, and an object of the present invention is to prevent an orbital shift of an electronic beam without causing a rise in temperature and an increase in power consumption, and to improve image quality in image display. An object of the present invention is to provide an apparatus and a manufacturing method thereof.

In order to achieve the above object, an image display device according to an aspect of the present invention comprises: a first substrate having an image display surface; a first substrate having an image display surface; A second substrate provided with a plurality of electron sources for emitting and exciting the image display surface; and an atmospheric pressure load disposed between the first and second substrates and acting on the first and second substrates. A plurality of soothers for supporting an electron beam, and a conductor disposed between the tip of the soother on the side of the second substrate and the second substrate, respectively, for repelling an electron beam emitted from the electron source. , And.

Further, according to another aspect of the present invention, there is provided a method of manufacturing an image display device, comprising: a first substrate having an image display surface; and a first substrate having a gap between the first substrate and an electron emission surface. A second substrate provided with a plurality of electron sources for exciting the image display surface; and an atmospheric pressure load disposed between the first and second substrates and acting on the first and second substrates. Multiple supporting users and In the method for manufacturing an image display device,

A conductor is disposed between a predetermined position of the second substrate and a tip of the spacer on the second substrate side, and the spacer is placed on the second substrate side with the tip sandwiching the conductor. According to the image display device configured as described above, in which the first and second substrates are joined to each other in a state where the electron source is arranged to be in contact with the second substrate, the electron source located near the spacer is The emitted electrons are once repelled by the electric field formed by the conductor, orbit in the direction away from the spacer, and then are attracted to the spacer and approach the spacer. Take the orbit to The repulsion and attraction cancel the orbital deviation of the electrons, and the electrons emitted from the electron source eventually reach the target position on the image display surface. Thus, it is possible to obtain an image display device in which the deterioration of color purity due to electron mislanding is reduced and the image quality is improved.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a perspective view showing an SED according to an embodiment of the present invention. FIG. 2 is a perspective view of the SED cut along a line 111 in FIG.

FIG. 3 is an enlarged cross-sectional view of the above SED.

FIG. 4 is an enlarged sectional view showing a main part of an SD according to a second embodiment of the present invention.

FIG. 5 is an enlarged cross-sectional view showing a main part of an SED according to a third embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

The present invention will be described with reference to the drawings. E. An embodiment applied to a surface conduction electron-emitting device (hereinafter, referred to as SED), which is a type of FED, will be described in detail.

As shown in Fig. 1 and Fig. 3, this SED has a first substrate 10 and a second substrate 12 each made of a rectangular glass plate as transparent insulating substrates. Are opposed to each other with a gap of about 1.0 to 2.0 mm. The second substrate 12 is formed to have a slightly larger dimension than the first substrate 10. The first substrate 10 and the second substrate 12 are joined to each other via a rectangular frame-shaped side wall 14 made of glass to form a flat rectangular vacuum envelope 15. It is composed.

On an inner surface of the first substrate 10, a phosphor screen 16 is formed as an image display surface. This phosphor screen 16 is configured by arranging phosphor layers R, G, B and a black light-shielding layer 11 that emit red, blue, and green light upon collision with electrons. These phosphor layers R, G, and B are formed in a strip shape or a dot shape. A metal back 17 made of aluminum or the like and a getter film (not shown) are formed on the phosphor screen 16. Note that a transparent conductive film or a color filter film made of, for example, ITO may be provided between the first substrate 10 and the phosphor screen.

On the inner surface of the second substrate 12, a number of surface conduction electron-emitting devices 18 each emitting an electron beam are provided as electron sources for exciting the phosphor layer of the phosphor screen 16. Have been. These electron-emitting devices 18 have a plurality of rows and a plurality of rows corresponding to each pixel. They are arranged in multiple rows. Each electron-emitting device 18 includes an electron-emitting portion (not shown), a pair of device electrodes for applying a voltage to the electron-emitting portion, and the like. On the inner surface of the second substrate 12, a number of wires 21 for supplying a potential to the electron-emitting device 18 are provided in a matrix shape, and the ends of the wires 21 are provided outside the vacuum envelope 15. Has been withdrawn.

The side wall 14 functioning as a bonding member is made of, for example, a sealing material 20 such as a low-melting-point glass or a low-melting-point metal to form a peripheral portion of the first substrate 10 and a peripheral portion of the second substrate 12. The first substrate and the second substrate are bonded together.

As shown in FIGS. 2 and 3, the SED includes a spacer assembly 22 disposed between the first substrate 10 and the second substrate 12. The spacer assembly 22 includes a plate-shaped grid 24 and a plurality of column-shaped spacers erected integrally on both sides of the grid.

More specifically, the grid 24 has a first surface 24 a facing the inner surface of the first substrate 10 and a second surface 24 b facing the inner surface of the second substrate 12. It is arranged in parallel with the substrate. A large number of electron beam passage holes 26 and a plurality of spacer openings 28 are formed in the grid 24 by etching or the like. The electron beam passage holes 26 functioning as apertures in the present invention are arranged to face the electron-emitting devices 18 respectively, and transmit the electron beams emitted from the electron-emitting devices. The spacer openings 28 are located between the electron beam passage holes 26 and are arranged at a predetermined pitch. The flange 24 is formed of, for example, an iron-nickel metal plate to a thickness of 0.2 to 0.25 mm, and the surface thereof has An oxide film composed of elements constituting the metal plate, for example, an oxide film composed of Fe 3 O 4 and i Fe 3 O 4 is formed on the surface of the grid 24. A high-resistance film is formed by coating and firing a high-resistance material consisting of a mix, and the resistance of the high-resistance film is set to E + 8 Ω or more.

The electron beam passage hole 26 is formed in a rectangular shape of, for example, 0.15 to 0.25 mm X 0.15 to 0.25 mm, and the spacer opening 28 is formed of, for example, a diameter. Are formed in a circular shape of about 0.2 to 0.5 mm. The above-described high-resistance film is also formed on the wall surface of the electron beam passage hole 26 provided in the grid 24.

On the first surface 24 a of the grid 24, a first spacer 30 a is standing upright so as to overlap with each spacer opening 28. An indium layer is applied to the extension end of each first spacer 30a to form a relaxation layer 31 for reducing variations in spacer height. The extending end of each first spacer 30a is connected to the light-shielding layer 11 of the relaxation layer 31, the getter film, the metal back 17 and the phosphor screen 16. And is in contact with the inner surface of the first substrate 10. The relaxation layer 31 does not affect the trajectory of the electron beam at all, and is limited to metal as long as it has an appropriate hardness that has an effect of reducing the variation in height of the spacer. is not. The black light-shielding layer 11 of the metal back 17 and the phosphor screen 16 also has the effect of reducing the height variation of the spacer, and this can sufficiently reduce the variation in height. If available, relaxation layer 3 There is no need to provide 1

On the second surface 24b of the grid 24, a second spacer 3Ob is provided standing upright over the spacer holes 28, and its extending end is It is in contact with the inner surface of the second substrate 12. The extension end of each second spacer 3 Ob is located on the wiring 21 provided on the inner surface of the second substrate 12, and the extension of the wiring and the second spacer is also provided. A conductor 33 is provided between the protruding end. The conductor 33 is formed in a shape substantially similar to the extended end of the second spacer 30b, and its thickness, that is, the height along the direction orthogonal to the second substrate 12 is For example, it is set to 120 0m.

As described later, the conductor 33 acts so as to repel the electron beam emitted from the electron-emitting device 18 in a direction away from the second spacer 30b. The conductor 33 is made of, for example, a high melting point metal such as platinum, tungsten, iridium, rhenium, osmium, ruthenium, an alloy thereof, or a conductive glass containing these metals. Have been. Metals such as indium, aluminum, silver, and copper can be used as the conductor 33.However, when discharge occurs, if the melting temperature is low, the metal melts and does not perform its original function. Therefore, it is preferable to use a high melting point metal.

The shape of the conductor 33 is not particularly limited, but it is desirable that the corners be rounded in consideration of electric discharge. The height of the conductor 33 is determined by the repulsive force applied to the electron beam, that is, the electron beam. It is set arbitrarily in consideration of the orbit correction amount.

Each of the first and second spacers 30a and 30b is a grits It is formed in a tapered shape with a smaller diameter from the side of the extension 24 toward the extension end. For example, each of the first spacers 30a has a diameter of about 0.4 mm at the base end located on the side of the Darlid 24, a diameter of about 0.3 mm at the extension end, and a height of about 0.3 mm. . 6 mm. Each of the second spacers 30b has a diameter of approximately 0.4 mm at the base end located on the grid 24 side, a diameter of approximately 0.25 mm at the extension end, and a height of approximately 0.25 mm. 0.8 mm. Thus, the first spacer

The height of 30a is formed lower than the height of the second spacer 3Ob, and the height of the second spacer is approximately equal to the height of the first spacer.

4 Z is set to 3 times or more.

The surface resistance of the first spacer 30 a and the second spacer 30 b is 5 × 10 l 3 gj. Each spacer opening 28, the first and second spacers 30a, 30b are located in line with each other, and the first and second spacers are located in this spacer opening. They are integrally connected to each other through 28. As a result, the first and second spacers 30a and 30b are formed integrally with the grid 24 with the grid 24 sandwiched from both sides.

The spacer assembly 22 configured as described above is disposed between the first substrate 10 and the second substrate 12. The first and second spacers 30a and 30b contact the inner surfaces of the first substrate 10 and the second substrate 12 so that the first and second spacers 30a and 30b contact these substrates. The applied atmospheric pressure load is supported, and the distance between the substrates is maintained at a predetermined value.

As shown in FIG. 2, the SED is a voltage supply unit 50 that applies a voltage to the grid 24 and the metal back 17 of the first substrate 10. It has. This voltage supply section 50 is connected to the grid 24 and the metal back 17, respectively. For example, the grid 24 has a voltage of 12 kV and the metal back 17 has a voltage of 17 k. Apply a voltage of V. That is, the voltage applied to the grid 24 is set higher than the voltage applied to the first substrate 10, for example, within 1.25 times.

In the above SED, when displaying an image, an anode voltage is applied to the phosphor screen 16 and the metal back 17, and the electron beam B emitted from the electron-emitting device 18 is anoded. It is accelerated by the voltage and collided with the phosphor screen 16. Thereby, the phosphor layer of the phosphor screen 16 is excited and emits light to display an image.

Next, a method of manufacturing the SED configured as described above will be described. When manufacturing the spacer assembly 22, first, a grid 24 having a predetermined dimension and first and second dies (not shown) having a rectangular plate shape and substantially the same dimensions as the grid are provided. prepare. In this case, a thin plate with a thickness of 0.12 mm made of Fe—50% Ni is degreased. ■ After cleaning and drying, the etching is used to etch the electron beam passage holes 26 and the space. An aperture 28 is formed to form a grid 24. Thereafter, the entire grid 24 is oxidized by an oxidation process, and an insulating film is formed on the surface of the grid including the inner surfaces of the electron beam passage holes 26 and the spacer openings 28. Further, a solution in which fine particles of tin oxide and antimony oxide are dispersed is spray-coated on the insulating film, dried and fired to form a high-resistance film.

The first and second molds have grid 24 spacers respectively. It has a plurality of through holes corresponding to the openings 28. In the first mold and the second mold, at least the inner surfaces of the plurality of through holes corresponding to the spacer openings 28 are coated with a resin that is thermally decomposed by heat treatment. .

Then, the first mold is positioned such that each through hole is aligned with the spacer opening 28 of the grid 24, and the first surface 24a of the grid is positioned. In close contact. Similarly, the second mold is closely attached to the second surface 24b of the grid with each through-hole positioned so that each through-hole is aligned with the spacer opening 28 of the grid 24. Let it. Then, the first mold, the grid 24 and the second mold are fixed to each other using a clamper or the like (not shown).

Next, for example, a paste-shaped spacer forming material is supplied from the outer surface side of the first mold, and the through hole of the first mold, the spacer opening 28 of the grid 24, Fill the spacer of the second mold with the spacer forming material. As a spacer-forming material, a glass paste containing at least a UV-curable binder (organic component) and a glass filler is used.

Subsequently, the filled spacer forming material is irradiated with ultraviolet rays (UV) as radiation from the outer surfaces of the first and second molds, and the spacer forming material is cured by UV. After this, heat curing may be performed if necessary. Next, the resin applied to each of the through holes of the first and second molds is thermally decomposed by heat treatment to form a gap between the spacer forming material and the mold. Separate the mold from grid 24.

Subsequently, a grid 24 filled with a spacer forming material is added. After heat treatment in a heating furnace and the binder is blown out of the spacer forming material, the sintered material is fired at about 500 to 550 ° C for 30 minutes to 1 hour. . As a result, a spacer assembly 22 in which the first and second spacers 30a and 30b are formed on the grid 24 is obtained.

On the other hand, the first substrate 10 on which the phosphor screen 16 and the metal back 17 are provided in advance, the electron emission element 18 and the wiring 21 are provided, and the side wall 1 is provided. A second substrate 12 to which 4 has been bonded is prepared.

Subsequently, a conductive paste is printed on the wiring 21 of the second substrate 12 so as to have a thickness of approximately 120 m in a shape substantially similar to the tip of the second spacer 30b. The conductor 33 is formed at a predetermined position on the wiring 21 by drying and firing. In addition, indium powder for forming the height relaxing layer 31 is applied to the extending end of each first spacer 30a.

Next, the spacer assembly 22 configured as described above is positioned and arranged on the second substrate 12. At this time, the spacer assembly 22 is positioned so that the extending ends of the second spacers 30b are in contact with the conductors 33, respectively. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are arranged in a vacuum chamber, and the inside of the vacuum chamber is evacuated. To join the first substrate to the second substrate. At the same time, the indium powder placed at the extension end of the first spacer 30a is melted, and the pushing height of the first substrate 10a is corrected. This produces a SED with spacer assembly 22. 9

1 3 Built.

According to the SED configured as described above, as shown in FIG. 3, the electron beam B emitted from the electron-emitting device 18 located in the vicinity of the second spacer 3 Ob becomes the second beam. It is repelled by the electric field formed by the conductor layer 33 provided between the extended end of the spacer 30b and the second substrate 12, and takes a trajectory in a direction away from the second spacer. While heading toward the electron beam passage hole 26. Thereafter, the electron beam B is attracted by the charged second spacer 30 Ob and the first spacer 30a, and orbits in a direction approaching these spacers. The repulsion and suction cancel out the orbital deviation of the electron beam B, and the electron beam B emitted from the electron-emitting device 18 finally reaches the target of the phosphor screen 16. Reaches the phosphor layer.

Specifically, the smaller the distance from the electron-emitting device to the spacer side, the greater the amount of movement of the electron beam to the spacer side, and conversely the distance to the spacer side is sufficiently large. In this case, the amount of movement of the electron beam to the spacer is negligible. The electron beam movement phenomenon occurs when secondary electrons and reflected electrons generated on the phosphor screen collide with the spacer and charge the spacer. At this time, the secondary electron emission coefficient on the surface of the spacer becomes 1 or more due to the accelerating voltage used in the SED, the spacer side wall becomes positively charged, and the electron beam is attracted to the spacer side. become.

In the present embodiment, the conductor 33 is provided between the second substrate side end of the spacer having a relatively low electron velocity and the second substrate, and the conductor 33 allows the electron beam to be emitted. In the direction to repel the spacer An electric field is formed. By controlling the height of the conductor 33, it is possible to change the strength of the electric field and control the amount of repulsion. In the present embodiment, instead of releasing the charge of the spacer, the orbital deviation of the electron beam is canceled by the suction by the spacer and the repulsion by the conductor 33. ing. Therefore, according to the above SED, there is no need to provide a complicated mechanism for converging an electron beam, such as an electron gun in a CRT.

As described above, according to the above-described SED, the first and second spacers 30a and 30b are charged, and even if the electron beam B is attracted by these spacers. In addition, it is possible to prevent the orbit of the electron beam from being shifted. As a result, mislanding of the electron beam B is prevented, and as a result, deterioration of color purity is reduced and image quality can be improved.

In addition, if the conductive treatment is applied directly to all or part of the surface of the spacer, the reactive current flowing from the first substrate to the second substrate via the spacer increases, and the temperature rises or increases. Causes an increase in power. In addition, the conductive processing part may be a gas generation source during the operation of the SED, and may cause ion bombardment of the electron source located near the spacer. On the other hand, according to the present embodiment, the conductor 33 can be used to reduce the electric current around the resistor without causing an increase in the reactive current, an increase in the temperature, an increase in the power consumption, and an ion collision. By changing the field, the trajectory of the electron beam can be easily controlled.

An SED according to the present embodiment and an SED in which the above-described conductor 33 was not provided were prepared, and the movement amount of the electron beam was compared. As a result, in SEDs without conductors, On the other hand, while the beam has moved about 120 im to the spreader side, the SED according to the present embodiment has almost zero movement of the electron beam, and the color purity of the displayed image is also improved. Was.

Further, according to the SED, the grid 24 is disposed between the first substrate 10 and the second substrate 12 and the height of the first spacer 30a is increased. The height is formed lower than the height of the second spacer 30b. As a result, the grid 24 is located closer to the first substrate 10 side than the second substrate 12 is. Therefore, even when a discharge occurs from the first substrate 10 side, the grid 24 suppresses the discharge damage of the electron-emitting devices 18 provided on the second substrate 12. Becomes possible. Therefore, it is possible to obtain an SED with excellent pressure resistance against discharge and improved image quality.

In addition, according to the SED having the above configuration, the height of the first spacer 30a is formed lower than that of the second spacer 30b, so that the grid is applied to the grid 24. Even when the applied voltage is higher than the voltage applied to the first substrate 10, the electrons generated from the electron-emitting devices 18 can reliably reach the phosphor screen.

Further, even when the plurality of first spacers 30a have a variation in height, the variation is absorbed by the height relaxing layer 31 and the plurality of first spacers and the first substrate 1 are absorbed. 0 and can be reliably contacted. Therefore, the first and second spacers 30a and 30b can maintain the interval between the first substrate 10 and the second substrate 12 uniformly over almost the entire area. Become.

Next, an SED according to a second embodiment of the present invention will be described. As shown in FIG. 4, according to the second embodiment, The conductor 33 is formed of a metal or an alloy in a shape similar to the extended end of the second spacer 30b. For example, the conductor 33 is formed of a metal plate having a thickness of 200 m from F e —50% Ni and has a fixed layer 4 made of a conductive frit, a conductive adhesive or the like. 0 is fixed on the shield line 2 1 of the second substrate 12. Then, the spacer assembly 22 holds the first and second substrates 10 and 1 with the extended end of each second spacer 30 b contacting the conductor 33. It is located between the two.

The other configuration is the same as that of the above-described first embodiment, and the same portions are denoted by the same reference characters and detailed description thereof will not be repeated.

When manufacturing the SED according to the second embodiment configured as described above, the first and second substrates 10, 12, and the substrate are manufactured by the same steps as in the first embodiment. Form a pulse assembly 22. At this time, the height of the first spacer 30a was 0.2 mm, and the height of the second spacer 3Ob was 1.0 Omm.

Subsequently, a conductive adhesive having a thickness of 5 βm is applied to a predetermined position on the wiring 21 of the second substrate 12 in a shape substantially similar to the tip of the second spacer 30b, and the fixing layer 4 is formed. Form a 0. Then, after placing a conductor 33 of 200 m thick made of Fe—50% Ni on the fixed layer 40, the fixed layer is dried, and the conductor 33 is wired. Stick on top.

After that, similarly to the first embodiment, the spacer assembly 22 is positioned and arranged on the second substrate 12. At this time, the extending ends of the second spacers 30b are in contact with the conductors 33, respectively. Position the spacer assembly 22 as shown. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are placed in a vacuum chamber, and the inside of the vacuum chamber is evacuated. To join the first substrate to the second substrate. Thereby, the SED is manufactured.

According to the SED having the above configuration, the same operation and effect as those of the first embodiment can be obtained. Further, in the second embodiment, the fixed layer 40 in which the conductor 33 is fixed to the wiring 21 can be used as a correction layer for correcting variations in the height of the spacer. For this reason, it is possible to reduce the manufacturing cost of the spacer without requiring high processing accuracy of the spacer.

Further, the SED according to the second embodiment and the SED without the conductor 33 were prepared, and the movement amount of the electron beam was compared. As a result, in the SED without the conductor, the electron beam was suctioned to the spacer side by about 150 Um, whereas in the SED according to the present embodiment, the moving amount of the electron beam was Was almost zero, and the color purity of the displayed image was also improved.

Next, an SED according to a third embodiment of the present invention will be described. As shown in FIG. 5, according to the third embodiment, the conductor 33 is formed of a metal or an alloy in a shape similar to the extended end of the second spacer 30b. ing. For example, the conductor 33 is formed of a metal plate having a thickness of 200 jUm from F e —50% Ni and a fixed layer made of an insulating adhesive, for example, a flat glass. It is fixed to the extended end of the second spacer 30b by 42. The spacer assembly 22 is fixed to the conductor 33. Are disposed between the first and second substrates 10 and 12 with the extended end of each second spacer 30 b contacting the wiring 21 on the second substrate 12. .

The other configuration is the same as that of the above-described first embodiment, and the same portions are denoted by the same reference numerals and detailed description thereof will be omitted.

When manufacturing the SED according to the third embodiment configured as described above, the first and second substrates 10, 12, and the substrate are manufactured by the same steps as those in the first embodiment. Form the user assembly 22. At this time, the height of the first spacer 30a was 0.2 mm, and the height of the second spacer 30b was 1.0 mm.

Subsequently, a flat glass is applied to the tip of each second spacer 30 b of the spacer assembly 22 to form a fixed layer 42. After the conductor 33 having a thickness of 200 μm made of Fe—50% Ni is placed on the fixed layer 42, the fixed layer is dried and fired. The conductor 33 is fixed to the tip of the second spacer 3 Ob.

Next, the spacer assembly 22 is positioned and arranged on the second substrate 12. At this time, the spacer assembly 22 is placed such that the extended ends of the second spacers 30b to which the conductors 33 are fixed are located on the wirings 21 of the second substrate 12 respectively. Position. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are arranged in a vacuum chamber, and the inside of the vacuum chamber is evacuated. Then, the first substrate is joined to the second substrate. Thereby, SED is manufactured.

According to the SED configured as described above, the first implementation form 9

The same operational effects as in the nineteenth embodiment can be obtained. In the third embodiment, the fixed layer 42 that fixes the conductor 33 to the tip of the second spacer may be used as a correction layer that corrects the height variation of the spacer. it can. Therefore, it is possible to reduce the manufacturing cost of the spacer without requiring high processing accuracy of the spacer.

Further, the SED according to the third embodiment and the SED without the conductor 33 were prepared, and the movement amount of the electron beam was compared. As a result, in the SED without the conductor, the electron beam was attracted to the spacer side by about 150 jtm, whereas in the SED according to the present embodiment, the movement amount of the electron beam was small. It was almost zero, and the color purity of the displayed image was also improved.

The present invention is not limited to the above-described embodiment, but can be variously modified within the scope of the present invention. For example, the present invention is applicable not only to an image display device having a grid but also to an image display device having no grid. In this case, a columnar or plate-shaped spacer formed integrally is used, and a conductor is provided between the second substrate-side tip of each spacer and the second substrate. Thus, the same operation and effect as described above can be obtained.

Further, in the present invention, the diameter and height of the spacer, and the dimensions and materials of other components can be appropriately selected as necessary. Furthermore, in the above-described embodiment, the conductor is provided between the wiring on the second substrate and the tip of the spacer. However, the conductor is not limited to the wiring, and the second substrate may be provided at a position avoiding the electron-emitting device. It is sufficient if it is provided between and the tip of the spreader. The electron source is not limited to a surface conduction electron-emitting device, but can be applied to any type of FED using an electron source that emits electrons in a vacuum such as a field emission type or a carbon nanotube.

Industrial applicability

As described in detail above, according to the present invention, without causing a rise in temperature or an increase in power consumption, it is possible to prevent a trajectory shift of an electron beam and improve an image quality of an image display device and its manufacture. A method can be provided.

Claims

The scope of the claims

1. a first substrate having an image display surface;

A second substrate provided with a plurality of electron sources for emitting electrons to excite the image display surface while being opposed to the first substrate with a gap therebetween;

A plurality of spacers disposed between the first substrate and the second substrate and supporting an atmospheric pressure load acting on the first and second substrates; a tip of the spacer on the second substrate side; A conductor disposed between the first substrate and the second substrate for repelling the electron beam emitted from the electron source;

An image display device comprising:

2. a first substrate having an image display surface;

A plate-like grid disposed between the first substrate and the second substrate and having a plurality of openings through which electrons emitted from the electron source pass;

A plurality of spurs fixed to the grid and arranged between the first and second substrates and supporting an atmospheric load acting on the first and second substrates. When,

A conductor disposed between the tip of the spacer on the side of the second substrate and the second substrate, for repelling an electron beam emitted from the electron source;

An image display device comprising:

3. The image display device according to claim 1, wherein the conductor is formed by sintering a conductive paste.

4. The image display device according to claim 1, wherein the conductor is formed of a metal plate or an alloy plate.

5. The image display device according to claim 4, wherein the conductor is fixed to the second substrate via a conductive fixing layer.

6. The image display device according to claim 4, wherein the conductor is fixed to a tip of the spacer on the second substrate side via an insulating fixing layer.

7. The image display device according to claim 1, wherein the conductor has a shape similar to a tip of the spacer on the second substrate side.

8. The image display device according to claim 1, wherein the electron source is a surface conduction electron source.

9. A plurality of wirings provided on the second substrate for supplying a potential to the electron source,

The image display device according to claim 1, wherein each of the conductors is disposed on the wiring.

10. A first substrate having an image display surface, and a plurality of electron sources that emit electrons and excite the image display surface are provided in addition to being arranged opposite to the first substrate with a gap therebetween. An image display device comprising: a second substrate provided; and a plurality of spacers disposed between the first substrate and the second substrate and supporting an atmospheric load acting on the first and second substrates. In the manufacturing method,

A predetermined position of the second substrate and a tip of the spacer on the second substrate side. Place a conductor between the ends,

A method of manufacturing an image display device, wherein the first and second substrates are joined together in a state where the spacer is arranged such that the tip of the spacer on the second substrate side is in contact with the second substrate with the conductor interposed therebetween. .

11. The step of arranging the conductor includes printing a conductive base at a desired position on the second substrate in a shape substantially similar to the shape of the tip of the spacer, and firing the conductor to form the conductor. A method for manufacturing an image display device according to claim 10.

12. The step of arranging the conductor includes forming a fixed layer having conductivity at a desired position on the second substrate, and forming the tip of the spacer made of a metal or alloy plate on the fixed layer. 10. The method for manufacturing an image display device according to claim 10, wherein a conductor having a substantially similar shape is mounted and fixed.

13. The step of arranging the conductor includes forming a fixed layer having an insulating property at the tip of the above-mentioned spacer on the second substrate side, and forming a fixed layer from the metal or alloy plate through the fixed layer. The method for manufacturing an image display device according to claim 10, wherein a conductor substantially similar in shape to the spacer tip is fixed to the spacer tip.