KR20040062163A - 인듐-틴-옥사이드를 포함하는 금속적층구조 - Google Patents
인듐-틴-옥사이드를 포함하는 금속적층구조 Download PDFInfo
- Publication number
- KR20040062163A KR20040062163A KR1020020088490A KR20020088490A KR20040062163A KR 20040062163 A KR20040062163 A KR 20040062163A KR 1020020088490 A KR1020020088490 A KR 1020020088490A KR 20020088490 A KR20020088490 A KR 20020088490A KR 20040062163 A KR20040062163 A KR 20040062163A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- film layer
- ito
- oxide
- thickness
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
번호 | 적층구조 | 면저항 | 면저항균일도 | 평균투과도 |
1 | ITO(500)/Cu(180)/ITO(500) | 3.77 | 1.38 | 57 |
3.85 | 3.31 | 57 | ||
2 | ITO(500)/Mo(100)/ITO(500) | 14.98 | 2.12 | 31 |
14.96 | 1.94 | 31 | ||
3 | ITO(500)/AlNd(100)/ITO(500) | 10.31 | 0.92 | 40 |
10.29 | 1.88 | 42 | ||
4 | ITO(500)/Cr(100)/ITO(500) | 19.29 | 2.35 | 25 |
19.84 | 1.28 | 27 | ||
5 | ITO(500) | 39.06 | 0.83 | 92 |
6 | Cu(180)/ITO(1000) | 4.14 | 6.54 | 38 |
3.91 | 2.99 | 38 | ||
7 | Mo(100)/ITO(1000) | 13.41 | 2.68 | 22 |
13.01 | 3.3 | 22 | ||
8 | AlNd(100/ITO(1000)) | 9.19 | 0.92 | 22 |
9.33 | 0.43 | 24 | ||
9 | Cr(100)/ITO(1000) | 15.29 | 1.67 | 16 |
15.79 | 1.45 | 17 | ||
10 | ITO(1000) | 21.66 | 2.35 | 92 |
11 | ITO(1000)/Cu(180) | 3.99 | 1.5 | 38 |
3.96 | 1.64 | 37 | ||
12 | ITO(1000)/Mo(100) | 21.48 | 4.17 | 27 |
20.57 | 4.13 | 26 | ||
13 | ITO(1000)/AlNd(100) | 13.24 | 3.63 | 24 |
13.08 | 1.6 | 23 | ||
14 | ITO(1000)/Cr(100) | 25.64 | 3.39 | 20 |
26.58 | 3.18 | 21 |
번호 | 적층구조 | 면저항 | 면저항균일도 | 평균투과도 |
1 | ITO(500)/ITO(500) | 35 | 2.73 | 87 |
2 | ITO(500)/Cu(140)/ITO(500) | 4.7 | 2.13 | 66 |
4.8 | 2.15 | 67 | ||
3 | ITO(500)/Cu(100)/ITO(500) | 6.6 | 1.97 | 77 |
6.7 | 1.19 | 76 | ||
4 | ITO(500)/Cu(66)/ITO(500) | 11.7 | 2.71 | 81 |
11.4 | 2 | 81 | ||
5 | ITO(1000) | 6.7 | 2.35 | 92 |
Claims (4)
- 인듐-틴-옥사이드(Indium-Thin-Oxide)를 포함하는 금속 적층구조에 있어서,인듐-틴-옥사이드(ITO)로 구성되는 제 1 박막층과;상기 제 1 박막층 두께의 10 ~ 40% 두께로 상기 제 1 박막층 상부에 적층되며, 구리(Cu)로 구성되는 제 2 박막층과;상기 제 1 박막층과 실질적으로 동일한 두께로서, 상기 제 2 박막층 상부에 적층되며, 인듐-틴-옥사이드로 구성되는 제 3 박막층을 포함하는 금속 적층구조.
- 제 1항에 있어서,상기 제 2 박막층은 상기 제 1 박막층 두께의 10 ~ 20% 두께로 상기 제 1 박막층 상부에 적층되는 금속 적층구조.
- 제 1항에 있어서,상기 제 1 박막층 및 상기 제 3 박막층은 400 내지 600Å이고,상기 제 2 막막층은 50 내지 200Å인 금속 적층구조.
- 제 3항에 있어서,상기 제 2 박막층은 50 내지 150Å인 금속 적층구조.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0088490A KR100537375B1 (ko) | 2002-12-31 | 2002-12-31 | 인듐-틴-옥사이드를 포함하는 금속적층구조 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0088490A KR100537375B1 (ko) | 2002-12-31 | 2002-12-31 | 인듐-틴-옥사이드를 포함하는 금속적층구조 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040062163A true KR20040062163A (ko) | 2004-07-07 |
KR100537375B1 KR100537375B1 (ko) | 2005-12-19 |
Family
ID=37353596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0088490A KR100537375B1 (ko) | 2002-12-31 | 2002-12-31 | 인듐-틴-옥사이드를 포함하는 금속적층구조 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100537375B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7619254B2 (en) | 2004-11-17 | 2009-11-17 | Samsung Electronics Co., Ltd. | Thin film transistor array panel including layered line structure and method for manufacturing the same |
-
2002
- 2002-12-31 KR KR10-2002-0088490A patent/KR100537375B1/ko active IP Right Grant
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7619254B2 (en) | 2004-11-17 | 2009-11-17 | Samsung Electronics Co., Ltd. | Thin film transistor array panel including layered line structure and method for manufacturing the same |
US8372701B2 (en) | 2004-11-17 | 2013-02-12 | Samsung Display Co., Ltd. | Thin film transistor array panel including layered line structure and method for manufacturing the same |
US8637869B2 (en) | 2004-11-17 | 2014-01-28 | Samsung Display Co., Ltd. | Thin film transistor array panel including layered line structure and method for manufacturing the same |
US9111802B2 (en) | 2004-11-17 | 2015-08-18 | Samsung Display Co., Ltd. | Thin film transistor array panel including layered line structure and method for manufacturing the same |
US9431426B2 (en) | 2004-11-17 | 2016-08-30 | Samsung Display Co., Ltd. | Thin film transistor array panel including layered line structure and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
KR100537375B1 (ko) | 2005-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10950793B2 (en) | Display panel having cathode connected to auxiliary electrode through conductive spacers and manufacturing method thereof, and display device | |
CN104730603B (zh) | 一种防反射层叠结构及其制作方法、基板和显示装置 | |
US6897478B2 (en) | Flat panel display device with anti-reflection layer having concentration gradient | |
KR101502676B1 (ko) | 어레이 기판, 그 제조방법 및 디스플레이 장치 | |
US8648364B2 (en) | Flat panel display including an opaque film to block an eternal light reflected from a thin film transistor (TFT) and a capacitor | |
KR100527191B1 (ko) | 저저항 캐소드를 사용하는 유기 전계 발광 소자 | |
CN107680993A (zh) | Oled面板及其制作方法 | |
CN110085766B (zh) | 显示面板及其制备方法、显示装置 | |
US10734608B2 (en) | Display panel and manufacturing method thereof and display device including display panel | |
US9081122B2 (en) | Light blocking member and display panel including the same | |
TW200521590A (en) | Electrode wiring substrate and display device | |
TW202011090A (zh) | 陣列基板、顯示面板及顯示裝置 | |
KR101713945B1 (ko) | 양면 발광 방식 유기전계 발광소자 | |
KR101796934B1 (ko) | 반사 전극을 구비한 유기전계발광 표시장치 및 그 제조 방법 | |
KR20170078177A (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
CN110676293A (zh) | 一种彩膜基板、显示面板及其制备方法 | |
US10573205B2 (en) | Flexible display device and method for manufacturing flexible display device | |
KR20130032067A (ko) | 산화물 반도체, 이를 포함하는 박막 트랜지스터, 및 박막 트랜지스터 표시판 | |
KR100537375B1 (ko) | 인듐-틴-옥사이드를 포함하는 금속적층구조 | |
CN107833894B (zh) | 一种顶栅tft基板、显示器件及tft基板的制备方法 | |
WO2022247056A1 (zh) | 显示面板及显示装置 | |
WO2020062486A1 (zh) | 显示面板及其制作方法、显示模组 | |
KR20160024091A (ko) | 유기 발광 표시 장치 | |
KR102462238B1 (ko) | 유기발광표시장치 | |
KR101948751B1 (ko) | 발광다이오드 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120928 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20130930 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20141124 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20161118 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20171116 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20181114 Year of fee payment: 14 |