KR20040061284A - In plane switching mode liquid crystal display device having high quality image - Google Patents

Abstract

PURPOSE: An in-plane switching mode LCD(Liquid Crystal Display) with improved definition quality is provided to form a step height removing layer on common electrodes or pixel electrodes that generate in-plane switching to remove a step height caused by the electrodes, thereby preventing deterioration of definition due to the step height. CONSTITUTION: A TFT(Thin Film Transistor), a plurality of common electrodes(105), and pixel electrodes(107) are arranged on a first substrate(120). The TFT includes a gate electrode(111) formed on the first substrate(120), a gate insulating layer(122) formed on the gate electrode(111), a semiconductor layer(112) formed on the gate insulating layer(122), and a source electrode(113) and a drain electrode(124) formed on the semiconductor layer(112). A passivation layer(124) is formed on the TFT. A first alignment layer(128a) aligning liquid crystal molecules in a specific direction is formed on the passivation layer(124). A semiconductor layer(117) formed on the gate insulating layer(122) over the common electrodes(105) removes or soften a step height caused by the common electrodes(105).

Description

Transverse electric field mode liquid crystal display device with improved image quality {IN PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE HAVING HIGH QUALITY IMAGE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field mode liquid crystal display device. In particular, an alignment control force due to a step is reduced by stacking a semiconductor layer for removing a step on a common electrode and / or a pixel electrode arranged in a pixel to generate a transverse electric field. The present invention relates to a transverse electric field mode liquid crystal display device capable of being prevented.

Recently, with the development of various portable electronic devices such as mobile phones, PDAs, and notebook computers, there is a growing demand for flat panel display devices for light and thin applications. Such flat panel displays are being actively researched, such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel), FED (Field Emission Display), VFD (Vacuum Fluorescent Display), but mass production technology, ease of driving means, Liquid crystal display devices (LCDs) are in the spotlight for reasons of implementation.

Such liquid crystal display devices have various display modes according to the arrangement of liquid crystal molecules. However, TN mode liquid crystal display devices are mainly used because of the advantages of easy monochrome display, fast response speed, and low driving voltage. In such a TN mode liquid crystal display device, liquid crystal molecules aligned horizontally with the substrate are almost perpendicular to the substrate when a voltage is applied. Therefore, there is a problem that the viewing angle is narrowed upon application of voltage due to the refractive anisotropy of the liquid crystal molecules.

In order to solve this viewing angle problem, liquid crystal display devices of various modes having wide viewing angle characteristics have recently been proposed, but among them, the liquid crystal display device of the lateral field mode (In Plane Switching Mode) is applied to actual production. It is produced. The IPS mode liquid crystal display device aligns liquid crystal molecules in a plane by forming at least one pair of electrodes arranged in parallel in a pixel to form a transverse electric field substantially parallel to the substrate.

1 is a view showing the structure of a conventional IPS mode liquid crystal display device. FIG. 1A is a plan view and FIG. 1B is a sectional view taken along the line II ′ of FIG. 1A. As shown in FIG. 1A, pixels of the liquid crystal panel 1 are defined by gate lines 3 and data lines 4 arranged vertically and horizontally. Although only the (n, m) th pixels are shown in the drawing, the actual liquid crystal panel 1 has N (> n) and M (> m) gate lines 3 and data lines 4, respectively. Are arranged so as to form N × M pixels over the entire liquid crystal panel 1. The thin film transistor 10 is formed at the intersection of the gate line 3 and the data line 4 in the pixel. The thin film transistor 10 includes a gate electrode 11 to which a scan signal is applied from the gate line 3, and a semiconductor layer formed on the gate electrode 11 and activated as a scan signal is applied to form a channel layer. 12 and a source electrode 13 and a drain electrode 14 formed on the semiconductor layer 12 and to which an image signal is applied through the data line 4. The image signal input from the outside is applied to the liquid crystal layer. do.

In the pixel, a plurality of common electrodes 5 and a pixel electrode 7 are arranged substantially parallel to the data line 4. In addition, a common line 16 connected to the common electrode 5 is disposed in the middle of the pixel, and a pixel electrode line 18 connected to the pixel electrode 7 is disposed on the common line 16. It overlaps with the common line 16. Storage capacitance is formed in the transverse electric field mode liquid crystal display by overlapping the common line 16 and the pixel electrode line 18.

In the IPS mode liquid crystal display device configured as described above, when no signal is applied, the liquid crystal molecules are aligned substantially parallel to the common electrode 5 and the pixel electrode 7 or at an angle. When the thin film transistor 10 is operated to apply a signal to the pixel electrode 7, a transverse electric field substantially parallel to the liquid crystal panel 1 is generated between the common electrode 5 and the pixel electrode 7. Since the liquid crystal molecules rotate on the same plane along the transverse electric field, gray level inversion due to the refractive anisotropy of the liquid crystal molecules can be prevented.

The conventional IPS mode liquid crystal display device having the above structure will be described in more detail with reference to the cross-sectional view of FIG. 1B.

As shown in FIG. 1B, a gate electrode 11 is formed on the first substrate 20, and a gate insulating layer 22 is stacked over the entire first substrate 20. The semiconductor layer 12 is formed on the gate insulating layer 22, and the source electrode 13 and the drain electrode 14 are formed thereon. In addition, a passivation layer 24 is formed over the entire first substrate 20, and an alignment layer 28a is formed thereon to align the liquid crystal molecules. In addition, a plurality of common electrodes 5 are formed on the first substrate 20, and a pixel electrode 7 and a data line 4 are formed on the gate insulating layer 22 to form the common electrode 5. A transverse electric field is generated between the pixel electrodes 7.

The black matrix 32 and the color filter layer 34 are formed on the second substrate 30. The black matrix 32 is to prevent light leakage into an area where the liquid crystal molecules do not operate. As shown in the drawing, the black matrix 32 is formed between the region of the thin film transistor 10 and between the pixel and the pixel (ie, the gate line and the data line). Area). The color filter layer 34 is composed of R (Red), B (Blue), and G (Green) to realize actual colors. In addition, an overcoat layer 36 is formed on the color filter layer 34 to improve the flatness of the substrate 30 and to protect the color filter layer, and an alignment layer 28b is formed thereon. The liquid crystal layer 40 is formed between the first substrate 20 and the second substrate 30 to complete the liquid crystal panel 1.

FIG. 2 is a cross-sectional view taken along the line II-II 'of FIG. 1A and is an enlarged cross-sectional view of the common electrode 5 region. In general, the common electrode 5 is formed to a thickness of about 2700Å. This thickness is very large compared with the thickness of the pixel electrode 7 which is 400 to 500 mW. Accordingly, a step is caused by the gate insulating layer 22 and the protective layer 24 stacked on the common electrode 5, and a step is also generated in the alignment layer 28a thereon. However, the step may cause the following problems.

In order to provide the alignment control force to the alignment layer 28a, the alignment layer 28a must be rubbed with a rubbing cloth. However, when there is a step, in particular, a severe step, rubbing by the alignment cloth becomes impossible in the stepped area, and thus cannot provide the alignment control force. In FIG. 2, region A is a region in which the alignment control force is not provided as described above. As such, the liquid crystal molecules are irregularly aligned in the region where the alignment control force is not provided, and thus the liquid crystal molecules are oriented in a direction different from that of other regions (ie, the region where the alignment control force is provided), so that unwanted light leaks around the common electrode. Therefore, when the liquid crystal display device is fabricated, it becomes a fatal cause of defects.

In addition, even when rubbing is possible, since the surface of the oriented stepped region is at an angle with the surface of other regions, there is a problem that the alignment direction of the liquid crystal molecules is different and light leaks.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and forms a step removing layer on the common electrode and / or the pixel electrode which generates the transverse electric field to remove (or mitigate) the step difference caused by the electrode, thereby preventing image quality defects due to the step difference. An object of the present invention is to provide a transverse electric field mode liquid crystal display device.

In order to achieve the above object, the transverse electric field mode liquid crystal display device according to the present invention comprises a plurality of gate lines and data lines defining a plurality of pixels, a driving element disposed in each pixel, and substantially parallel in the pixels. At least one first electrode and a second electrode disposed to generate a transverse electric field, and a step removing layer formed on at least one of the first electrode and the second electrode to remove the step by the electrode.

The step removal layer may be formed of a semiconductor layer, a metal layer, or an insulating layer. The step removal layer may be formed on the gate insulating layer of the thin film transistor to reduce the step difference of the electrode by increasing the thickness of the common electrode and / or the pixel electrode.

1A is a plan view of a conventional transverse electric field mode liquid crystal display device.

FIG. 1B is a cross-sectional view taken along line II ′ of FIG. 1A.

FIG. 2 is a sectional view taken along the line II-II 'of FIG. 1A; FIG.

3 is a plan view illustrating a structure of a transverse electric field mode liquid crystal display device according to an exemplary embodiment of the present invention.

4A is a cross-sectional view taken along the line III-III ′ of FIG. 3.

4B is a cross-sectional view taken along the line IV-IV 'of FIG. 3.

5 is a cross-sectional view illustrating a structure of a transverse electric field mode liquid crystal display device according to another exemplary embodiment of the present invention.

6 is a plan view illustrating a structure of a transverse electric field mode liquid crystal display device according to still another exemplary embodiment of the present invention.

7 is a plan view illustrating a structure of a transverse electric field mode liquid crystal display device according to still another embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

103: gate line 104: data line

105: common electrode 107: pixel electrode

110: thin film transistor 111: gate electrode

112: semiconductor layer 113: source electrode

114: drain electrode 117: semiconductor layer for removing step

120,130: substrate 122: gate insulating layer

124: protective layer 128: alignment layer

132: black matrix 134: color filter layer

136: overcoat layer

In the present invention, the step difference caused by the common electrode is reduced to prevent light from leaking around the common electrode. The step is generated not only by the common electrode but also by the pixel electrode. Of course, the present invention not only reduces the step difference caused by the common electrode but also reduces the step difference caused by the pixel electrode, thereby preventing light leakage. However, since the thickness of the common electrode is about 2700 GPa and the thickness of the pixel electrode is about 400 to 500 GPa, the influence by the step difference of the common electrode is substantially greater. Therefore, the present invention can be used more effectively to reduce the step difference of the common electrode.

The basic concept of the present invention is not to eliminate the step itself, but to alleviate the step by stacking one more layer on the common electrode (or the pixel electrode). In particular, in the present invention, the step is alleviated by stacking the semiconductor layers. Since the semiconductor layer is formed by the same process as the semiconductor layer of the thin film transistor, there is an advantage that the process can be simplified.

Hereinafter, an IPS mode liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.

3 is a plan view showing the structure of an IPS mode liquid crystal display device 101 according to an embodiment of the present invention. As shown in the figure, each pixel defined by the gate line 103 and the data line 104 includes a gate electrode 111, a semiconductor layer 112, a source electrode 113, and a drain electrode 114. The thin film transistor 110 is formed, and the common electrode 105 and the pixel electrode 107 are disposed substantially parallel to the data line 104 in the pixel to generate a transverse electric field. The semiconductor layer 117 is arranged in the pixel. The semiconductor layer 117 is formed along the common electrode 105 and has a width wider than that of the common electrode 105 to cover the common electrode 105.

An IPS mode liquid crystal display device having the above structure will be described in more detail with reference to FIGS. 4A and 4B.

4A is a cross-sectional view taken along the line III-III ′ of FIG. 3, respectively. As shown in the drawing, a thin film transistor, a plurality of common electrodes 105 and a pixel electrode 107 are disposed on the first substrate 120 made of a transparent material such as glass. The thin film transistor includes a gate electrode 111 formed on the first substrate 120, a gate insulating layer 122 formed on the gate electrode 111, a semiconductor layer 112 formed on the gate insulating layer 122, The source electrode 113 and the drain electrode 114 formed on the semiconductor layer 112 are formed, and the passivation layer 124 is formed on the thin film transistor. In addition, a first alignment layer 128a formed of polyimide or the like to align the liquid crystal molecules in a specific direction is formed on the protective layer 124. Although not shown in the drawing, the semiconductor layer 112 is an impurity semiconductor layer doped with an intrinsic semiconductor layer and n ⁺ ions or n ⁻ ions and ohmic contact with the source electrode 113 and the drain electrode 114. Is done.

The common electrode 105 is formed on the first substrate 120, and the pixel electrode 107 is formed on the gate insulating layer 122. The common electrode 105 is formed by depositing a metal such as Cu, Mo, Ta, Cr, Ti, Al or Al alloy by evaporation or sputtering, and then etching using an etchant. It consists of a single layer or a plurality of layers. In this case, the common electrode 105 may be formed by a different process from the gate electrode 111 of the thin film transistor. However, the common electrode 105 may be formed by the same process as the gate electrode 111 to simplify the process.

The pixel electrode 107 is formed of a single layer or a plurality of layers formed by stacking and etching a metal such as Cr, Mo, Ta, Cu, Ti, Al, or an Al alloy, and the source electrode 113 and the drain of the thin film transistor. It may be preferable to form the electrode 114 and the data line 104 by the same process. In addition, the pixel electrode 107 may be formed on the passivation layer 124 with a transparent metal such as indium tin oxide (ITO) or indium zinc oxide (IZO).

The semiconductor layer 117 is formed on the gate insulating layer 122 on the common electrode 105. The semiconductor layer 117 is formed by the same process as the semiconductor layer 112 of the thin film transistor, and includes an intrinsic semiconductor layer and an impurity semiconductor layer.

On the other hand, the second substrate 130 is formed with a black matrix 132 for preventing light leakage into the non-display area and a color filter layer 134 for realizing an image on an actual screen. In addition, an overcoat layer 136 is formed on the color filter layer 134 to improve the flatness of the second substrate 130 and to protect the color filter layer 134, and a second alignment layer 128b is formed thereon. .

The liquid crystal layer 140 is formed between the first substrate 120 and the second substrate 130 configured as described above to complete the IPS mode liquid crystal display device. The liquid crystal layer 140 may be formed by a vacuum liquid crystal injection method that injects liquid crystal between the first substrate 120 and the second substrate 130 bonded in a vacuum state, and has recently been in the spotlight. crystal dispensing method), i.e., the liquid crystal is dropped directly onto the first substrate 120 or the second substrate 130, and then the entire substrates 120 and 130 are bonded by the first and second substrates 120 and 130 combined. It may be formed by a method that spreads uniformly over.

4B is a cross-sectional view taken along the line IV-IV 'of FIG. 3, and is an enlarged cross-sectional view of the common electrode 105. As shown in the figure, a semiconductor layer 117 having a predetermined thickness is formed on the gate insulating layer 122 on the common electrode 105, and a protective layer 124 is stacked thereon.

The semiconductor layer 117 is a layer for removing or alleviating a step caused by the common electrode 105. In this regard, the semiconductor layer 117 has a different function and purpose from the semiconductor layer 112 of the thin film transistor. Therefore, the semiconductor layer 117 may be referred to as a step removal semiconductor layer or a step relaxation semiconductor layer. will be.

In general, the gate insulating layer 122 of the IPS mode liquid crystal display device is formed to have a thickness of about 4000 GPa and the protective layer 124 is formed of a thickness of about 2500 GPa, so that an insulating layer of about 6500 GPa is formed on the common electrode 105. Are stacked. On the other hand, the semiconductor layer 117 is formed to a thickness of about 2500 kPa. Since the semiconductor layer 117 is formed on the gate insulating layer 122, a layer having a thickness of about 9000 Å is stacked on the common electrode 105. Increasing the layer thickness means decreasing the step due to the thickness of the common electrode 105. That is, as the thickness of the layer stacked on the common electrode 105 increases, the step difference caused by the common electrode 105 decreases.

When the first alignment layer 128a is rubbed with a rubbing cloth by the above step reduction, rubbing is possible up to the stepped region, thereby providing an alignment control force in the stepped region, so that the liquid crystal molecules can be aligned in a desired direction. do. Therefore, it is possible to prevent light from leaking into the stepped region.

On the other hand, the step removal or step reduction (or step reduction) semiconductor layer is also formed on top of the pixel electrode can reduce the step by the pixel electrode. Of course, the thickness of the pixel electrode is much smaller than the thickness of the common electrode, but this does not mean that the step by the pixel electrode does not occur. Therefore, in order to remove the step difference caused by the pixel electrode, it is preferable to form the step removal semiconductor layer on the pixel electrode.

However, the step removal semiconductor layer formed on the pixel electrode must be formed by a process different from that of the thin film transistor. In the IPS mode liquid crystal display device having the structure shown in FIG. 4A, since the pixel electrode 107 is formed after the semiconductor layer forming process of the thin film transistor, the semiconductor layer 112 of the thin film transistor and the semiconductor layer for removing a step on the pixel electrode ( 117 cannot be formed at the same time. The step of removing the step by forming the semiconductor layer 117 formed on the common electrode 105 is to simplify the process by forming the semiconductor layer 117 at the same time as the thin film transistor process. From this point of view, the semiconductor layer may not necessarily be used as the step removing layer formed on the pixel electrode. For example, a metal layer or an insulating layer may be formed to remove the step caused by the pixel electrode. This step removal metal layer or insulating layer may be applied to the structure shown in Figure 4a. That is, the step difference caused by the common electrode 105 may be removed (or relaxed) by the metal layer or the insulating layer instead of the semiconductor layer 117.

5 is a cross-sectional view illustrating a structure of an IPS mode liquid crystal display device according to another exemplary embodiment of the present invention. In this case, the description of the same configuration as that shown in FIG. 4A will be omitted, and only the other configuration will be described. As shown in the figure, in the IPS mode liquid crystal display device of this embodiment, step difference removing layers 217a and 217b are formed on the common electrode 205 and the pixel electrode 207, respectively, so that the common electrode 205 is formed. And the step difference caused by the pixel electrode 207 can be removed (or alleviated).

At this time, the step removing layer (217a, 217b) may be made of a metal layer or an insulating layer, as mentioned above, in the embodiment it is preferably made of a semiconductor layer. Unlike the structure in which the pixel electrode 207 is formed on the gate insulating layer 222, in this embodiment, since the pixel electrode 207 is formed on the first substrate 220, the step removal semiconductor layer 217a is formed. And 217b can be formed by the same process as that of the semiconductor layer 212 of the thin film transistor. That is, the step between the common electrode 205 and the pixel electrode 207 can be effectively removed by a simple process. Therefore, in this embodiment, the step removal semiconductor layers 217a and 217b can be formed on the gate insulating layer 222 to remove the step difference caused by the common electrode 205 and the pixel electrode 207.

In general, the IPS mode liquid crystal display device having the structure shown in FIG. 3 is referred to as a 4-block IPS mode liquid crystal display device. A block means a region through which light is transmitted between the common electrode and the pixel electrode in the liquid crystal display device. In the IPS mode liquid crystal display device shown in FIG. 3, three common electrodes and two pixel electrodes are arranged in a pixel to form four light transmitting regions, that is, four blocks. It is called an IPS mode liquid crystal display device.

However, the present invention is not limited to the four-block IPS mode liquid crystal display device, but can be applied to all possible IPS mode liquid crystal display devices such as two blocks or six blocks. In other words, the IPS mode liquid crystal display device of the present invention is not limited to the IPS mode liquid crystal display device of a specific block.

FIG. 6 is for explaining an IPS mode liquid crystal display device of a block other than 4 blocks, and the IPS mode liquid crystal display device of this figure is a 6-block IPS mode liquid crystal display device.

As shown in the figure, in the six-block IPS mode liquid crystal display, four common electrodes 305 and three pixel electrodes 307 are arranged in the pixel to form six light transmission regions, that is, blocks. In this case, similarly to the structures of FIGS. 3 and 4A, a step removing semiconductor layer 317 is formed on the four common electrodes 305 to remove or alleviate the step caused by the common electrode 305. In this case, the metal layer or the insulating layer may be formed as a step removing layer.

Although not shown in the drawing, a stepped semiconductor layer (or a metal layer and an insulating layer) may be formed on the pixel electrode 307 to remove or alleviate the step caused by the pixel electrode 307.

7 is a view showing the structure of an IPS mode liquid crystal display device according to another embodiment of the present invention. As shown in the figure, in the liquid crystal panel 401 of the IPS mode liquid crystal display device of this structure, pixels defined by the gate line 403 and the data line 404 are divided into two domains. That is, the pixel electrode line 408 to which the pixel electrode 407 is connected and the common line 416 to which the common electrode 405 are connected are disposed at the center of the pixel, and the pixel electrode line 418 and the common line ( The pixel is divided into two domains based on 416. However, the IPS mode liquid crystal display device of the present invention is not limited to the above structure but may be applied to a structure in which the common electrode 405 and the pixel electrode 407 are bent two or more times in a zigzag shape, and the common line 416 ) May not be formed in the center of the pixel and may overlap the gate line 403 or may be formed near the gate line 403. In addition, like the common electrode 405 and the pixel electrode 407, the data line 404 may be bent twice or more, and thus the entire pixel may be zigzag-shaped.

The thin film transistor 410 including the gate electrode 411, the semiconductor layer 412, the source electrode 413, and the drain electrode 414 is formed in an area where the gate line 403 and the data line 404 intersect the pixel. In this case, a signal input from the outside is applied to the pixel electrode 407, and a transverse electric field is generated in the liquid crystal layer as the signal is applied.

In the IPS mode liquid crystal display device having the above structure, rubbing is performed along the data line 404, and the common electrode 405 and the pixel electrode 407 of the first domain of the pixel (the upper part of the pixel with respect to the common line) are extended. Direction and the extension direction of the common electrode 405 and the pixel electrode 407 of the second domain (the lower part of the pixel with respect to the common line) are different. In particular, the common electrode 405 and the pixel electrode 407 are formed at an angle with respect to the gate line 403, and the common electrode 405 and the pixel electrode 407 of the first domain and the second domain are the common line 416. Symmetry around Therefore, the color conversion is compensated with each other in the first domain and the second domain so that the color conversion does not appear to the eyes of the actual user. That is, the IPS mode liquid crystal display device having the structure shown in FIG. 7 has a structure that can effectively prevent color conversion.

However, in the IPS mode liquid crystal display device having the above structure, since the common electrode 405 and the pixel electrode 407 are arranged at a predetermined angle with respect to the common line 416, the common line 416 and the common electrode forming an acute angle ( The step is overlapped with the area (area B) between 405. Therefore, rubbing is not substantially performed on the alignment film formed in this area, and the liquid crystal molecules are irregularly aligned. However, in the present invention, as shown in the figure, the step removal semiconductor layer 417 is formed on the common electrode 405, it is possible to prevent the defect due to the step. Although the step removal semiconductor layer of the present invention can be applied to various IPS mode liquid crystal display devices having various structures, the present invention is considered in that the inclined two-domain structure IPS mode liquid crystal display device is affected by the step difference. It may be particularly effective for inclined two-domain structures.

As described above, in the IPS mode liquid crystal display device of the present invention, the step removal layer is formed on at least one of the common electrode and the pixel electrode arranged in the pixel to generate the transverse electric field. The step can be eliminated (or alleviated). Therefore, it is possible to prevent the light from leaking into the stepped region, thereby improving the quality of the liquid crystal display device.

Claims (19)

A plurality of gate lines and data lines formed on the first substrate to define a plurality of pixels; A drive element disposed in each pixel; At least one common electrode and a pixel electrode disposed substantially parallel in the pixel to generate a transverse electric field; And And a first step removing layer formed on the common electrode to remove the step caused by the common electrode. The transverse electric field mode liquid crystal display device of claim 1, wherein the driving device is a thin film transistor. The method of claim 2, wherein the thin film transistor, A gate electrode formed on the first substrate; A gate insulating layer stacked over the entire substrate on which the gate electrode is formed; A semiconductor layer formed on the insulating layer; A source electrode and a drain electrode formed on the semiconductor layer; And A transverse electric field mode liquid crystal display device comprising a protective layer stacked over the entire substrate on which the source and drain electrodes are formed. The transverse electric field mode liquid crystal display device of claim 3, wherein the first step removal layer is formed on the gate insulating layer. The transverse electric field mode liquid crystal display device of claim 3, wherein the first step removal layer comprises a semiconductor layer, a metal layer, or an insulating layer. The transverse electric field mode liquid crystal display device of claim 1, further comprising a second step removing layer disposed along the pixel electrode to remove a step caused by the pixel electrode. The transverse electric field mode liquid crystal display device of claim 6, wherein the second step removal layer comprises a semiconductor layer, a metal layer, or an insulating layer. The method of claim 1, Second substrate; A black matrix formed on the second substrate to block light; A color filter layer formed on the second substrate to implement color; And The transverse electric field mode liquid crystal display device further comprising a liquid crystal layer formed between the first substrate and the second substrate. The transverse electric field mode liquid crystal display device of claim 8, further comprising a first alignment layer and a second alignment layer formed on the first substrate and the second substrate, respectively. A plurality of gate lines and data lines defining a plurality of pixels; A thin film transistor disposed in each pixel; At least one common electrode and a pixel electrode disposed substantially parallel in the pixel to generate a transverse electric field; And And a step elimination layer formed on the pixel electrode to remove the step by the pixel electrode. The method of claim 10, wherein the thin film transistor, A gate electrode formed on the substrate; A gate insulating layer stacked over the entire substrate on which the gate electrode is formed; A semiconductor layer formed on the insulating layer; A source electrode and a drain electrode formed on the semiconductor layer; And A transverse electric field mode liquid crystal display device comprising a protective layer stacked over the entire substrate on which the source and drain electrodes are formed. 12. The transverse electric field mode liquid crystal display device of claim 11, wherein the pixel electrode is formed on the gate insulating layer. The transverse electric field mode liquid crystal display device of claim 12, wherein the step removing layer is an insulating layer or a metal layer. 12. The transverse electric field mode liquid crystal display device according to claim 11, wherein the step removal layer is a semiconductor layer. A plurality of gate lines and data lines defining a plurality of pixels; A drive element disposed in each pixel; At least one first electrode and a second electrode disposed substantially parallel in the pixel to generate a transverse electric field; And And a step removal layer formed on at least one of the first electrode and the second electrode to remove the step by the electrode. The transverse electric field mode liquid crystal display device of claim 15, wherein the step removal layer comprises a semiconductor layer, a metal layer, or an insulating layer. A plurality of gate lines and data lines defining a plurality of pixels including a first region and a second region; A drive element disposed in each pixel; At least one common electrode and a pixel electrode disposed substantially parallel in the pixel to generate a transverse electric field and extending in different directions in the first region and the second region; And And a stepped removing layer formed on the common electrode to remove the stepped by the common electrode. The transverse electric field mode liquid crystal display device of claim 17, wherein the step removing layer is formed on the gate insulating layer. 18. The transverse electric field mode liquid crystal display device of claim 17, wherein the step removal layer is formed of a semiconductor layer, a metal layer, or an insulating layer.