KR20040054251A - 세라믹스 히터 - Google Patents
세라믹스 히터 Download PDFInfo
- Publication number
- KR20040054251A KR20040054251A KR1020020081098A KR20020081098A KR20040054251A KR 20040054251 A KR20040054251 A KR 20040054251A KR 1020020081098 A KR1020020081098 A KR 1020020081098A KR 20020081098 A KR20020081098 A KR 20020081098A KR 20040054251 A KR20040054251 A KR 20040054251A
- Authority
- KR
- South Korea
- Prior art keywords
- heater
- heater wire
- wire
- plate
- heater plate
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 239000011888 foil Substances 0.000 claims abstract description 30
- 230000008018 melting Effects 0.000 claims abstract description 5
- 238000002844 melting Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 239000002994 raw material Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum nitrides Chemical class 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/004—Heaters using a particular layout for the resistive material or resistive elements using zigzag layout
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Resistance Heating (AREA)
Abstract
Description
히터선의 두께(㎛) | 25 | 50 | 100 | 125 |
입계 균열에 의한히터선의 균열 | ××× | ××○ | ○○○ | ○○○ |
세라믹스의 균열 | ○○○ | ○○○ | ○○○ | ○○○ |
주) ○: 균열 없음 ×: 균열 있음 (n=3) |
히터선의 두께(㎛) | 150 | 175 | 200 | 300 |
입계 균열에 의한히터선의 균열 | ○○○ | ○○○ | ○○○ | ○○○ |
세라믹스의 균열 | ○○○ | ○○○ | ○○× | ××× |
주) ○: 균열 없음 ×: 균열 있음 (n=3) |
Claims (4)
- 세라믹스 히터(10)에 있어서,세라믹스로 이루어진 히터 플레이트(12)와,두께가 100㎛ 내지 175㎛인 고융점 금속으로 이루어지고 상기 히터 플레이트(12)에 매설된 금속박 히터선(13)을 구비한 것을 특징으로 하는세라믹스 히터.
- 제 1 항에 있어서,상기 히터 플레이트(12)가 질화 알루미늄으로 이루어진 것을 특징으로 하는세라믹스 히터.
- 제 1 항에 있어서,상기 금속박 히터선(13)이 동일 평면내에 지그재그 형상으로 형성되어 있는 것을 특징으로 하는세라믹스 히터.
- 제 3 항에 있어서,상기 금속박 히터선(13)은 상기 히터 플레이트(12)의 중심쪽 위치에 있어서, 상기 히터 플레이트(12)의 원주 방향으로 제 1 피치(P1)로 형성된 내측 부분(13a)과, 상기 히터 플레이트(12)의 외주쪽의 위치에 있어서 상기 히터 플레이트(12)의 원주 방향으로 제 2 피치(P2)로 형성된 외측 부분(13b)을 가지며, 상기 제 2 피치(P2)가 상기 제 1 피치(P1)보다 작은 것을 특징으로 하는세라믹스 히터.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020081098A KR100588908B1 (ko) | 2002-12-18 | 2002-12-18 | 세라믹스 히터 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020081098A KR100588908B1 (ko) | 2002-12-18 | 2002-12-18 | 세라믹스 히터 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040054251A true KR20040054251A (ko) | 2004-06-25 |
KR100588908B1 KR100588908B1 (ko) | 2006-06-09 |
Family
ID=37347354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020081098A KR100588908B1 (ko) | 2002-12-18 | 2002-12-18 | 세라믹스 히터 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100588908B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101333631B1 (ko) * | 2012-12-21 | 2013-11-27 | (주)보부하이테크 | 퀄츠 히터 |
CN116113084A (zh) * | 2023-04-07 | 2023-05-12 | 无锡卓瓷科技有限公司 | 一种陶瓷加热盘 |
-
2002
- 2002-12-18 KR KR1020020081098A patent/KR100588908B1/ko active IP Right Grant
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101333631B1 (ko) * | 2012-12-21 | 2013-11-27 | (주)보부하이테크 | 퀄츠 히터 |
CN116113084A (zh) * | 2023-04-07 | 2023-05-12 | 无锡卓瓷科技有限公司 | 一种陶瓷加热盘 |
CN116113084B (zh) * | 2023-04-07 | 2023-06-06 | 无锡卓瓷科技有限公司 | 一种陶瓷加热盘 |
Also Published As
Publication number | Publication date |
---|---|
KR100588908B1 (ko) | 2006-06-09 |
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