KR20040016394A - Fabrication method of parts for the plasma processing equipments by slurry or sol processing and its parts - Google Patents

Abstract

PURPOSE: A method for fabricating parts of a plasma process receptacle using a plastering method is provided to form an etch-resistant layer in an inner member exposed to halogen gas plasma and greatly reduce fabricating cost by simply applying previously prepared slurry or sol to a desired base and by performing a firing or co-firing process. CONSTITUTION: A ceramic coating layer is formed on the base made of a ceramic molding material by a plastering method. A co-firing process is performed on the base including the ceramic coating layer(160). The ceramic coating layer is a single or multi layer, formed of an oxide-based, carbide-based, nitride-based or boride-based ceramic.

Description

Fabrication Method of Plasma Treatment Vessel Internal Material Using Coating Method and Fabricated Internal Material {Fabrication method of parts for the plasma processing equipments by slurry or sol processing and its parts}

The present invention relates to a ceramic inner material having excellent plasma resistance and corrosion resistance and a method of manufacturing the same for use in a semiconductor and display manufacturing apparatus.

In the manufacturing process of semiconductors and display parts, fluorides such as CHF ₃ and NF ₃ , chlorides such as BCl ₃ and Cl ₂ , and bromide such as HBr are generally used as processing gases, so that the members in the apparatus are significantly eroded. (erosion) Even inert argon (Ar) gas is ionized in the plasma environment, where Ar ions collide strongly with the member surface. Therefore, the member installed in the apparatus of the plasma atmosphere is further damaged by the synergistic effect of chemical erosion and physical ion bombardment. Yields in semiconductor and display manufacturing processes are greatly affected by contaminants and particles, and in addition to improving device integration, process atmospheres such as increased plasma density, increased design rules, and increased aspect ratios in the process Increasingly stringent and process conditions are becoming more and more demanding, with the demand for superior properties of the materials being used as the internal materials of the apparatus, and their importance is increasing.

Materials used as an internal material of semiconductor and display manufacturing apparatus using plasma are Al or Al alloy material, Al anodized film of Al, Sintered body such as Al ₂ O ₃ , SiC, Si ₃ N ₄ , AlN, and fluorine water. Or polymer film such as epoxy resin, Al ₂ O ₃ or Y ₂ O ₃ film manufactured by plasma spray coating, etc., and especially products coated with the outermost Y ₂ O ₃ film are widely applied. It is becoming.

For example, Korean Patent Laid-Open Publication No. 2001-098643 discloses a method for producing a member for halogen gas plasma and a corrosion resistance member, and Korean Patent Laid-Open Publication No. 2002-003367 discloses a plasma processing vessel inner material and a method for manufacturing the same. The present patent publications relate to a method of forming an Al ₂ O ₃ and Y ₂ O ₃ component into an intermediate layer, an undercoat layer, and an outermost layer by using a plasma spray coating method.

Figure 1 is a flow chart of the manufacturing process of the ceramic inner material according to the prior art.

Referring to FIG. 1, the molded body is made of high purity powder in step 20, and then presintered for strength in step 25. The shaped body is processed in step 30, followed by sintering and grinding through steps 35 and 40 to obtain the final matrix. Here, in step 45, a plasma-sprayed coating of a material of a desired component including Y ₂ O ₃ is performed, followed by post-heating in step 50 to complete the inner material.

However, the above-mentioned prior art has been pointed out the following problems.

First, in order to increase the interfacial peel strength of the coating film, in step 40, the surface of the sintered body is processed by bead blasting to increase the average roughness of the surface. Damage to brittle materials due to this cannot be avoided. Thus, the reliability of the product is lowered.

In addition, since the plasma spray coating method is adopted, an expensive apparatus is required and there is a limitation in the form of the raw powder that can be used. In other words, high purity powders must be used as spherical large particles to improve the flowability of the powders. In addition, the peel strength of the coating film is low, the pores in the film can not be avoided and a process step by post-heat treatment should be added.

In addition, since the coating film is porous, radicals such as F and Cl in the semiconductor process may penetrate and damage the base, and it is difficult to apply wet cleaning for recycling. This is because the acid and alkali components used in the wet process may be sucked into the capillary phenomenon in the thin film to increase matrix damage and to increase the degree of contamination by the remaining components in the process, thereby increasing wafer defects.

Accordingly, an object of the present invention is to solve the above-mentioned problems of the prior art, to resist chemical corrosion by the radicals (F, Cl) of halogen gas and physical erosion by plasma ions during the process as the inner material of the plasma processing vessel. Eggplant is to provide a method for efficiently manufacturing the inner material.

Another object of the present invention is to be resistant to chemical corrosion and physical erosion by plasma ions to suppress the generation of particles during the process, ultimately to increase the life of the parts, increase the replacement cycle of the parts, process yield and productivity It is to provide a plasma processing vessel inner material that can be.

Figure 1 is a flow chart of the manufacturing process of the ceramic inner material according to the prior art.

2A is a process flowchart of forming a ceramic coating layer on a ceramic formed body base according to an embodiment of the present invention.

2B is a process flowchart of forming a ceramic coating layer on a sintered body base according to an embodiment of the present invention.

2C is a process flowchart of forming a ceramic coating layer on a metal base according to an embodiment of the present invention.

3A is a scanning electron micrograph of a coating layer formed from an Al ₂ O ₃ − (30 wt%) Y ₂ O ₃ (particle size 4 μm) composition on a molded body according to the present invention.

3B is a scanning electron micrograph of a coating layer formed from an Al ₂ O ₃ − (30 wt%) Y ₂ O ₃ (particle size of 0.5 μm) composition on a shaped body according to the present invention.

3C is a scanning electron micrograph of a coating layer formed from the YAG composition on a shaped body in accordance with the present invention.

Figure 3d is a scanning electron micrograph of the surface coating layer prepared by a conventional plasma spray coating method.

Figure 4 is a graph showing the XRD analysis results for the YAG coating layer of Figure 3c.

In order to achieve the above object, in the method for manufacturing the inner material of the plasma processing vessel according to the present invention, a ceramic coating layer is formed on a substrate surface such as a ceramic molded body, a sintered body or a metal using a coating method, and then the substrate on which the ceramic coating layer is formed is formed. Sinter or sinter.

Here, the ceramic coating layer is formed in a single layer or multiple layers, Al ₂ O ₃ , Y ₂ O ₃ , ZrO ₂ , YAG, YAM, mullite (3Al ₂ O ₃ · 2SiO ₂ ), AlON, PSZ (Partially Stabilized Zirconia), oxides such as MgO, TiO ₂ , Nb ₂ O ₅ , HfO ₂ , ThO ₂ , Cr ₂ O ₃ , carbides such as SiC, B ₄ C, TaC, TiC, AlN, Si ₃ N ₄ , It is possible to form nitrides such as TiN, CrN and BN, and borides such as TiB ₂ and ZrB ₂ . At this time, the co-sintering or sintering step is a temperature range changes depending on the type of coating layer applied.

In addition, the coating material used in the coating method may be a slurry containing the ceramic powder to be coated or a sol having a hydrate form of the ceramic component to be coated. The alumina or zirconia ball may be used when mixing the necessary coating material. Can be used.

It is preferable to adjust the porosity of the intermediate layer by adding a small amount of about 1wt% to 10wt% of SiC whisker or BN powder in the components of the ceramic coating layer. At this time, it is preferable to mix using a plastic ball in order to minimize the damage of the whiskers when mixing the coating material used in the coating method.

The purity of the Al ₂ O ₃ powder of the raw material to be coated when forming the ceramic coating layer is used 99.7% or more, the purity of the Y ₂ O ₃ powder is used 99.99% or more, the particle size of the Al ₂ O ₃ powder is 0.2㎛ to 0.4㎛, Y ₂ O ₃ particle size of the powder can be used in that 5㎛ or 0.5㎛.

In order to achieve the above another object, the plasma treatment vessel inner material according to the present invention is to form a ceramic coating layer by using a coating method on the substrate surface, and then sintering the ceramic coating layer to form a resist.

The total thickness of the ceramic coating layer is preferably in the range of 1 μm to 2000 μm, and preferably further includes an intermediate layer containing pores directly on the base, and the Al ₂ O ₃ component close to the base is large. In addition, it is particularly preferable that the composition be inclined so that Y ₂ O ₃ of the coating layer is increased toward the outer layer.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. Embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art.

(Process order)

FIG. 2A illustrates a process sequence for forming a ceramic coating layer by applying a coating method and a co-sintering to a ceramic molded body substrate according to an embodiment of the present invention.

As shown in FIG. 2A, a molded body is prepared in step 110 and presintered in step 120 to impart mechanical strength, and then the molded body is processed in step 130 to prepare a matrix.

Next, in step 140, a slurry prepared in advance on the surface of the matrix is applied. In addition to the slurry containing the ceramic powder to be coated, the form of the coating material used in the coating method may be one in which the ceramic component to be coated includes a sol having a hydrate form. The applied ceramic coating layer is dried as in step 150 and then co-fired with matrix in step 160. The temperature at the time of sintering varies depending on the type of coating applied and the type of matrix. In particular, the sintering temperature can be lowered when using a sol than when using a slurry. Therefore, in the case of a molded article in which low-temperature sintering is preferable, it is preferable to form a coating layer using a sol and then carry out co-sintering. By co-sintering, a coating layer resistant to plasma ion bombardment and chemical erosion is effectively formed on the substrate surface. However, if the sintering temperature is too low and there is concern that the sintering of the ceramic base will be insufficient, then the base is first sintered and then the ceramic coating layer is formed with a sol as described with reference to FIG. The method of sintering is preferable.

On the other hand, the method of the present invention can be applied not only to the molded body surface, but also to the sintered body surface, and the order thereof is as shown in Fig. 2B.

Referring to FIG. 2B, a molded body is prepared in step 210 and pre-sintered in step 220, then a molded body processing as required in step 230 is performed, followed by sintering in step 240 to form a base. If necessary, the sintered body is processed in step 250.

Next, in step 260, a slurry or sol prepared in advance on the surface of the matrix is applied to form a ceramic coating layer, and then dried according to step 270. Finally, in step 280, the base on which the ceramic coating layer is formed is sintered to impart functionality such as corrosion resistance to the surface thereof. The temperature at the time of sintering changes its range according to the kind of coating layer applied. As described in the above sintering, the sintering temperature can be lowered when using a sol than when using a slurry.

In addition, the method of the present invention can be applied not only to the ceramic molded body and the sintered body surface, but also to the metal surface, and the order thereof is as shown in Fig. 2C.

Referring to FIG. 2C, a metal base is formed in step 310. Forming of the metal matrix can be by powder metallurgy, machining or casting.

Next, in step 320, a sol prepared in advance on the surface of the matrix is applied to form a ceramic coating layer. Since the melting temperature is low in the case of the metal matrix, it is preferable to use a sol to allow sintering at a temperature lower than the melting temperature. In particular, the coating layer formed using the sol is preferably dried stepwise as in step 330. Step drying is made possible by using a dispersant and a binder of the component which can in turn volatilize from low temperature.

Next, in step 340, the base on which the coating layer is formed is sintered to impart functionality such as corrosion resistance to the surface thereof. As in the case of co-sintering, the temperature at the time of sintering changes its range depending on the kind of coating layer applied.

Thus, in the method of the present invention, it is important that the ceramic coating layer is formed by a coating method and then sintered to impart functionality, and both ceramic molded bodies, ceramic sintered bodies, and metals may be used as the base. However, the case of co-sintering after applying a coating layer of various compositions on the molded body by using the slurry is superior to the peel strength of the interface than when the slurry is coated on the sintered body and sintered. However, even when the present invention is applied to the surface of the sintered body, the post sintering process can be adjusted to obtain a dense coating layer having a porosity of 5 or 2% by volume or less.

In both methods described with reference to FIGS. 2A and 2B, it is preferred to select a material that does not dissolve at 1300 ° C. as known. For example, Al ₂ O ₃ , ZrO ₂ , Partially Stabilized Zirconia (PSZ), oxides such as AlON, TiO ₂ , carbides such as SiC, B ₄ C, TaC, TiC, AlN, Si ₃ N ₄ , BN, TiN, etc. A boride-based ceramic material such as nitride, TiB ₂ , or ZrB ₂ can be used. In addition, if necessary, it may be formed of a high melting point metal such as molybdenum (Mo), tungsten (W), tantalum (Ta), quartz, silicon, or carbon. However, more preferably, a composition of an oxide ceramic material such as Al ₂ O ₃ , SiO ₂ , and a compound that forms eutectic melting with W, Mo high melting point metals and quartz and the like, such as YAG and mullite, is advantageous. .

In addition, the said known component may be comprised by the low raw material (99% or less of purity) or the sintering adjuvant, and may be comprised by the density | concentration well, and only the surface coating layer may be comprised by the composition excellent in high purity or plasma resistance.

If the coating layer is formed using a sol instead of a slurry, the sintering temperature can be lowered to 1300 ° C. or lower, for example, 800 ° C. or lower, and thus it is not necessary to select a material that does not dissolve at 1300 ° C. as a base. Thus, the known range that can be applied is further expanded. For example, the SiO _2, heat distortion temperature can be applied to a metal such as a low Al.

According to the method of the present invention, the coating layer is formed on the ceramic molded body, the sintered body, or the metal surface by coating, and various processes such as a painting process, a dipping process, a spinning process, or a spraying process are performed. Can be used. In particular, it is possible to form a multi-layer coating layer instead of a single layer depending on the purpose at the time of coating, and may vary the composition of the coating layer each time. In some cases, it may be preferable to intentionally make a difference in composition for the purpose of use, especially when it is desirable to make the composition of Y ₂ O ₃ incline high on the side facing the plasma. As described above, when forming the coating layer several times, it is necessary to sufficiently dry each coating process to prevent mutual contamination.

Here, when using a slurry or a sol as the coating material used in the coating step, it is possible to use an electrostatic repulsion by adjusting the pH or a steric repulsion to which a dispersant is added to uniformly disperse it. The mixing of the required raw materials is generally ball milled using alumina or zirconia balls.

If necessary, the porosity may be controlled by placing an intermediate layer containing SiC whisker or BN powder in a small amount of about 1 wt% to 10 wt% in the ceramic coating layer between the base and the other ceramic coating layer. In this case, in order to minimize whisker damage at the time of mixing the raw materials, it is preferable to mix using plastic balls.

The ceramic coating layer is a raw material having a property that can be applied by the coating method according to the concept of the present invention, but if the material is given resistance to plasma and corrosive gas during sintering, it is possible without any particular limitation, for example, Al ₂ O ₃ , Y ₂ Oxides such as O ₃ , ZrO ₂ , YAG, YAM, mullite, AlON, PSZ, MgO, TiO ₂ , Nb ₂ O ₅ , HfO ₂ , ThO ₂ , Cr ₂ O ₃ , SiC, B ₄ C, TaC, Carbides such as TiC, nitrides such as AlN, Si ₃ N ₄ , TiN, CrN, BN, and borides such as TiB ₂ and ZrB ₂ are used.

(Step 1 of the process-when forming a coating layer with slurry)

From now on, according to the present invention, in producing the ceramic internal material by the coating method as shown in Figs. 2A and 2B, the slurry production, application and (co) sintering will be described in detail.

1. Slurry Manufacturing

Slurry preparation begins by dispersing the raw material in a solvent. As mentioned above, two dispersion methods, electrostatic repulsion by pH adjustment and steric repulsion with a dispersant, can be used. From a commercial point of view, a method using a dispersant may be preferred.

First, dispersion by pH adjustment is performed by using deionized water as a solvent and Al ₂ O ₃ or Y ₂ O ₃ as a coating material. The pH is adjusted to a range of 2 to 4 with hydrochloric acid or nitric acid to prevent electrostatic repulsion. In this process, acid treatment is expected to have the side effect of removing most metal contaminants. The dispersant uses a method of dissolving a cationic and anionic dispersant in distilled water.

In addition, in order to mix raw materials, it is common to use a high purity alumina or zirconia ball, and plastic balls are also used when it contains a fragile substance like a whisker.

The powder content of the slurry is in the range of 20 to 50wt%, which greatly affects the viscosity and dispersion characteristics of the slurry, and also affects the particle size, shape, purity, and chemical properties of the surface. The thickness of the coating layer formed at one time during slurry application is greatly influenced by the concentration (content) of the powder in the slurry, and the multiple coating is prepared by a process of repeating application and drying.

Binder added to give the strength of the molded body is generally used in the molding of ceramic polyvinyl alcohol (PVA, poly vinyl alcohol), polyethylene glycol (PEG, poly ethylene glycol), metal cellulose (MC) , metal cellulose, polyvinyl butylene (PVB), poly methyl methacrylate (PMMA), etc. may be used, and a content of 0.5 to 1 wt% is added.

2. Application of slurry

The inner material used for the atmosphere inside the plasma processing container of semiconductor and display manufacturing apparatus has more Al ₂ O ₃ component near the base and increases the concentration of Y ₂ O ₃ toward the outer layer facing the plasma to cross the boundary surface. It is preferable to form a gradient coating layer so as to have a gradient of the composition. Since Y ₂ O ₃ has a high melting point and strong chemical bonding force with oxygen, it maintains a stable state even when subjected to an impact by plasma in an atmosphere containing halogen gas.

In addition, the composition containing pores directly on the matrix can be applied as an intermediate layer to obtain the effect of lowering the elastic modulus of the material and reducing the residual stress in the film. As a method of making porosity, there is a method of lowering the sinterability by adding a part of SiC whisker or BN in the slurry. In particular, the addition of the whisker can overcome the problem of intrinsic brittleness of the ceramic due to the strengthening effect of acicular particles to some extent, and can also obtain additional effects such as miniaturization of particle size and improvement of thermal shock resistance.

As a composition of the outermost layer, the Y ₂ O ₃ coating film was applied on the substrate in the form of a slurry or sol containing the Y ₂ O ₃ component on the intermediate layer formed above, in order to improve the interfacial adhesion and the density of the coating layer. Undergo sintering or sintering Particularly important when the iron control of the Y ₂ O ₃ layer of the outermost, iron components in the Y ₂ O ₃ coating layer of the outermost of contamination, even a very small amount (more than 30 ppm), to produce a fine spot results in a defective product. Therefore, since the ultra-high purity of the outermost layer, such as Y ₂ O ₃ coating layer is required, the three-dimensional milling method using the rotation and revolving without using the ball when mixing the raw materials is applied.

When applied to the inner material of the present invention, the total thickness of the coating layer may be in the range of 1㎛ ~ 2000㎛. The thickness of the thin film and the number of coating layers can be adjusted according to the application field and the process conditions. The thickness of the coating layer formed by using the slurry can be adjusted by appropriately changing the composition, concentration, number of coatings, etc. of the slurry, and is usually applied in a thickness of about 10 μm to 30 μm each time. Therefore, when using a slurry, a coating layer in the range of 50 μm to 2000 μm can be obtained without cracking. If the thickness of the coating layer is adjusted to be thinner than 50 mu m, it is difficult to effectively prevent damage due to plasma erosion, and if the thickness is thicker than 2000 mu m, it may cause peeling problems due to an increase in process steps and an increase in stress of the film. In this case, the range of 50 µm to 2000 µm is preferable. Of course, the peeling problem in the coating layer can be greatly reduced when adding a sintering process.

3. (co) sintering of coating layer

The monolayer or multilayer coating layer produced by the above process becomes a dense film by sintering. The sintering atmosphere varies depending on the type of coating layer, and in the case of oxide, an atmospheric atmosphere, in the case of carbide and nitride, a vacuum atmosphere, an inert or reducing atmosphere is applied. In order to sufficiently remove the moisture and the binder in the specimen, it is necessary to raise the temperature at a speed of 30 to 300 ° C per hour. Allow time to cool after cooling.

Experimental Example 1

Table 1 shows the relative density of the sintered body according to the lot-by-lot manufacturing conditions of the slurry. The slurry was prepared by adding 20-50 wt% of the solid component and milling for 10 hours. Applying the slurry prepared on the ceramic molded body produced by the slip casting process or granulated powder press process, and then co-sintered at 1500 ℃ for 1 hour, the density using the Archimedes principle It was measured by immersion method.

Al ₂ O ₃ powder used in Table 1 below is purity 99.7%, the average particle size is 0.3㎛.

Lot number Main composition Relative Density / Microstructure One Al ₂ O ₃ + MgO (0.1 wt% doped), PVA 1 wt%, solvent is methyl alcohol 97.7 2 Al ₂ O ₃ + Y ₂ O ₃ 30wt% composition (Y ₂ O ₃ particle size is 4㎛) 3a 3 Al ₂ O ₃ + Y ₂ O ₃ 30wt% composition (Y ₂ O ₃ particle size is 0.5㎛) 3b 4 57 wt% composition of Al ₂ O ₃ + Y ₂ O ₃ (Y ₂ O ₃ particle size is 0.5㎛) 94.1 (Figure 3c) 5 Y ₂ O ₃ 99.9% (Y ₂ O ₃ particle size is 0.5㎛) 91.7 6 Al ₂ O ₃ + SiC Whisker 5wt% composition, plastic ball milling 96.2 7 Al ₂ O ₃ + BN 5wt% composition, ZrO ₂ ball milling 94.3 8 SiO ₂ 99.9%, particle size 0.7 μm, ZrO ₂ ball milling 98.3 9 AlN (1.5 μm, 0.9 wt%) + Y ₂ O ₃ 5 wt% 88.3

Lot 1 is an Al ₂ O ₃ slurry production conditions, the used Al ₂ O ₃ powder has an average particle size of 0.3㎛, purity 99.7%, impurity concentration of 1500ppm Ca, 900ppm Na ₂ O, V, Cr , Ni, Cu, Mo, Y and the like are each 10 ppm or less. The sintering aid is doped with 0.1 wt% (1000 ppm) of MgO, but in the form of 99.9% high purity liquid Mg (NO ₃ ) ₂ .H ₂ O to improve dispersibility to the matrix. On the other hand, the dispersant was added 0.5wt% of an anionic liquid, which is a polycarboxylic acid ammonium, and 1wt% of PVA was added to the binder. The dispersant had a viscosity of 85 cps and a specific gravity of 1.15 at room temperature, and had a pH of 5% aqueous solution. The raw material prepared by the above method was put into deionized water, and ball milling to obtain a uniform slurry. The relative density of the sintered compact was 97.7, which was relatively high.

The slurry of Lot 2 is a slurry prepared by adding 30 wt% Y ₂ O ₃ (Y ₂ O ₃ particle size is 4 μm) to Al ₂ O ₃ . The coating layer sintered by applying this slurry onto a molded body shows a structure as shown in FIG. 3A. Referring to FIG. 3A, it can be seen that the size of the coating layer particles is about 1 to 4 μm and almost no porosity exists.

On the other hand, the slurry of lot 3 is the same as the slurry of lot 2, and only the particle size of Y ₂ O ₃ powder is 0.5 μm to apply a fine powder. The coating layer sintered by applying this slurry shows a structure as shown in FIG. 3B. Referring to Figure 3b, it can be seen that the scanning electron microscopic structure of the coating layer is very fine, 2㎛ or less.

Lot 4 is a slurry of YAG composition in which the ratio of Al ₂ O ₃ and Y ₂ O ₃ powder used in Lot 1 and Lot 5 is adjusted to 5: 3, and 0.5 wt% PVA and 0.8 wt% dispersant are added as a binder. After that, it was manufactured by milling with ZrO ₂ balls. The coating layer sintered by applying this slurry shows a structure as shown in Fig. 3C. As shown in Figure 3c, when using the slurry prepared according to lot 4, as the content of Y ₂ O ₃ increases compared to Figures 3a and 3b shows a tendency to increase the size of the particles and some pores are observed Able to know. The relative density of the sintered compact was measured to be 94.1.

On the other hand, Figure 3d is a scanning electron micrograph of the coating layer prepared by the conventional plasma spray coating method. In FIG. 3D, many pores are observed even though the photograph is of a lower magnification than in FIGS. 3A to 3C. Therefore, according to the present invention it is confirmed that a more dense and high-quality coating layer is obtained.

For reference, FIG. 4 shows X-ray diffraction peaks of the coating layer prepared with the YAG composition shown in FIG. 3C, and the surface index of the diffraction surface for each number is as follows. Number 1 (211), Number 2 (220), Number 3 (321), Number 4 (400), Number 5 (420), Number 6 (422), Number 7 (431), Number 8 is 521, number 9 is 440, number 10 is 532, number 11 is 444, number 12 is 640, number 13 is 721, number 14 is 642, number 15 Is 800. All were confirmed to be YAG.

Lot 5 is then prepared from a slurry of Y ₂ O ₃ powder having an average particle size of 0.5 μm and a purity of at least 99.9%. Rare earth oxides such as La ₂ O ₃ , Nd ₂ O _3, and the like are several tens of ppm or less as impurities in the raw materials, and trace amounts of Si, Ca, Fe, Ni, Cu, and Mg are present. The binder was added 0.8 wt% PEG. The rest of the process was in common with the conditions of lot 1. The relative density of the sintered compact was 91.7.

Lot 6 was 5 wt% of SiC whisker added to Al ₂ O _{3, and} was milled with plastic balls to minimize whisker damage in the slurry. The relative density of the sintered compact was measured to be 96.2.

Lot 7 was milled using ZrO ₂ balls in a composition in which 5 wt% of BN was added to the Al ₂ O ₃ matrix. The relative density of the sintered compact was 94.3.

Lot 8 is a slurry of SiO ₂ powder, and a slurry having a uniform dispersion of SiO ₂ using an electrostatic repulsive force in a solution having a purity of 99.9% and a particle size of 0.7 μm adjusted to a pH of 10 with an NH ₄ OH solution. It was. The relative density of the sintered compact obtained a high value of 98.3.

Lot 9 is put 5wt% of Y ₂ O ₃ particles in 1.5㎛ 99.8% purity of the AlN powder, the particle size as a sintering agent, 0.7wt% PVB as binder and the dispersing agent is then added to the PEI 1wt% ZrO ₂ by a ball mill It is manufactured. The relative density of the sintered compact was 88.3.

Powders applicable by the coating method of the present invention are not limited to Al ₂ O ₃ , Y ₂ O ₃ , SiO ₂ , YAG, AlN, SiC whiskers mentioned above, ZrO ₂ , YAM, mullite, AlON, Oxides such as TiO ₂ , Nb ₂ O ₅ , HfO ₂ , ThO ₂ , Cr ₂ O ₃ , carbides such as SiC, B ₄ C, TaC, TiC, nitrides such as AlN, Si ₃ N ₄ , BN, Borides such as TiB ₂ and ZrB ₂ , and high melting point metals such as Mo, W and Ta.

As can be seen from the density results of Table 1, although there are some differences depending on the production conditions for each lot of the slurry, the relative density was generally evaluated to be high. In particular, in the case of lots 1, 6, and 8, it was confirmed that a very dense sintered body can be obtained. 3A to 3C show a result of co-sintering the ceramic coating layer on the molded body, but the results for the coating layer formed by applying the ceramic coating layer on the sintered body and then sintering according to the present invention are similar. .

Experimental Example 2

Table 2 is a result of measuring the surface roughness and peel strength (adhesion force) of the coating layer when the coating layer is formed by applying the slurry prepared in Table 1 to the surface of the molded or sintered body and then co-sintering or sintering. The surface roughness was measured by a surface roughness gauge, the peel strength was measured by the Stud's tensile test method, and five specimens were measured and averaged.

Psalm Number Type of base Arrangement of coating layer Co-Sintering or Sintering Conditions Surface Roughness (㎛) Peel Strength (N / mm ² ) One Al ₂ O ₃ Molded body Lot 1 / Lot 4 / Lot 5 1450 ℃, 1 hour, atmospheric sinter 3.0 13.6 2 Lot 1 / Lot 4 / Lot 5 1550 ℃, 1 hour, atmospheric sinter 2.7 17.7 3 Lot 8 / lot 4 / lot 5 1550 ℃, 1 hour, atmospheric sinter 2.8 18.6 4 Sintered body Lot 8 / lot 4 / lot 5 1550 ℃, 1 hour, atmospheric sinter 2.1 12.2 5 Lot 8 / lot 4 / lot 5 / lot 9 1400 ℃, 1 hour, inert atmosphere sintered (10 atm pressure) 1.1 9.8 6 Lot 8 / lot 4 / lot 5 / lot 9 1500 ℃, 1 hour, inert atmosphere sintered (10 atm pressurization) 1.3 11.8 7 Lot 8 / lot 4 / lot 5 / lot 9 1600 ℃, 1 hour, inert atmosphere sintered (10 atm pressurization) 0.9 15.3 8 Quartz sintered body Lot 1 (particle size 0.7 μm) / lot 4 / lot 5 1200 ℃, 1 hour, atmospheric sinter 2.1 2.3 9 Lot 1 (particle size 0.7 μm) / lot 4 / lot 5 1300 ℃, l hour, atmospheric sinter 1.5 3.7 10 Lot 1 (particle size 0.3 μm) / lot 4 / lot 5 1350 ℃, 1 hour, atmospheric sinter 1.8 5.8

As can be seen from Table 2, the surface roughness was controlled to about 3㎛ or less for all specimens, and in the case of Al ₂ O ₃ matrix, the surface was treated in a molded state to easily increase the roughness. The peeling strength was better when the desired material was applied on the molded body surface and then co-sintered than when the sintered body was applied and then sintered.

On the other hand, in the case of quartz, the annealing temperature is low at 1215 ° C., and the softening temperature is also about 1680 ° C., so that the post sintering temperature is preferably adjusted to 1300 ° C. or lower in consideration of thermal deformation of the specimen. The peeling strength was also much worse than that of the Al ₂ O ₃ matrix, but could be improved to some extent by applying a powder having a particle size of nm.

Specimens 1 and 2 have the same arrangement of the molded matrix and the coating layer. For specimen 2, the peel strength of the coating layer could be increased by about 30% by increasing the sintering temperature by 100 ° C. than in the case of specimen 1. In addition, the porosity of specimen 2 was lower as a result of the tissue analysis.

Specimens 3 and 4 had the same coating layer arrangement and post (co) sintering conditions, but the specimen-based specimen 3 had about 34% better peel strength than that of the specimen 4 based on the sintered body. Shows. This is because the case where the coating layer is prepared on the surface of the molded body is densified by co-sintering, so that the thermal stress is alleviated to some extent, and the problem of the generation of microcracks and accumulation of stress during the bead blasting process applied to increase the surface roughness of the sintered body is reduced. As a result, it is judged that the result is that the peel strength of the coating layer increases. In addition, the surface roughness was also easier to control than when using a molded body base, compared with the case of using a sintered body base.

Specimen 5 to 7 showed the effect of post-sintering temperature and were sintered in a pressurized atmosphere of nitrogen gas to prevent thermal decomposition of AlN. As expected, with increasing sintering temperature, the peel strength increased about 20% and 56%, respectively, based on 1400 ° C.

Specimen 8 to 10 were applied to the Al ₂ O ₃ layer as an intermediate layer, considering that the main component of the quartz is SiO ₂ , and then applied a YAG layer and a Y ₂ O ₃ layer in order. In addition, by increasing the sintering temperature at intervals of 100 ℃ could see a significant improvement in adhesion. On the other hand, it is preferable that the post sintering temperature does not exceed 1300 ° C. in order to apply to a real product because deformation of the quality acting as a matrix is problematic. By using a finer particle size of SiO ₂ powder from 0.7 μm to 0.3 μm, the peel strength could be increased by about 36% even at the same 1350 ° C. post-treatment temperature, but it caused fine matrix damage, When applied, low-temperature sintering was possible while reducing damage to the quartz matrix, and some peel strength was obtained.

According to the present invention, members coated with Al ₂ O ₃ , YAG, Y ₂ O ₃ , and AlON in the outermost layer are particularly useful when applied to a plasma processing vessel generated under an atmosphere of halogen gas. For example, semiconductor devices such as etching apparatus, ashing apparatus, CVD (LPCVD & Plasma CVD) apparatus, PVD apparatus, sputter apparatus, ion implantation apparatus, photo apparatus, evaporation apparatus, diffusion apparatus, and display (LCD) , PDPs, organic EL) members in use, such as gas distribution plates (GDP), shower heads, seal plates, deposition rings, focus rings, insulation It can be applied to member fabrication and reprocessing processes such as insulator ring, shield ring, dome, susceptor, functional heater, electrostatic chuck (ESC) and mask.

(Detail step 2 of the process-when forming a coating layer with a sol)

According to the present invention, in preparing a ceramic or metal internal material by the coating method as shown in Figs. 2A to 2C, the preparation, application, step drying and (co) sintering of the sol will be described in detail.

1. Preparation of Sol

The preparation of the sol begins by first mixing the dispersant, the organic solvent and the binder.

1% or less of a dispersing agent such as glycol and acetate, a solvent (25 to 35%) made by mixing an organic solvent (75 to 95%), such as methanol and SiO ₂ , and one or more solvents of methyl, ethyl, and IPA ( About 50-60%) to volatilize stepwise depending on the temperature of the sol upon drying. In other words, the dispersant and the organic solvent may be volatilized step by step using different volatilization temperatures in terms of crack prevention. The dispersant and the binder may be mixed and stirred at the same time, or in the case of two or more dispersants, after the first stirring of sequentially dispersing only the dispersant, a binder may be added to perform secondary stirring.

It is preferable to use a thermosetting silicone polymer as the binder because, unlike general organic binders, most of them are volatilized in the range of 200 ° C to 500 ° C and hardly cause peeling of the coating layer above 500 ° C. Here, the binder content is 0.5% to 2%, preferably about 1%. If the binder content is less than 0.5%, there is a problem that the adhesive strength falls, if the binder content exceeds 2% there is a tendency that the dispersibility is sharply dropped and precipitated.

Next, a sol is prepared by adding the raw powder to be coated on the mixed dispersant and the binder. The sol raw material powder is calcined, for example, a raw material containing an OH group, for example, Al (OH) ₃ , Mg (OH) ₃ , Y (OH) ₃ , Zr (OH) _4, etc. in a temperature range of about 900 to 1100 ° C. Can be obtained by calculation. Before the sol reaction is initiated, a process of dispersing the powder using ultrasonic waves may be added to further improve the dispersibility of the powder. When the powder is mixed in the sol forming step, the mixture is mixed for 2 to 6 hours at 40 to 100 rpm using a ball mill. For the mixing of the raw materials, high purity alumina or zirconia balls, plastic balls and the like can be used.

The powder content in the sol is preferably in the range of 5 to 20 wt%. The thickness of the coating layer formed at one time during the sol coating is greatly influenced by the concentration (content) of the powder in the sol, and the multiple coating is prepared by a process of repeating the application and drying.

2. Application of sol and stepwise drying

Application of the sol can be carried out individually or in combination of two or more methods using dipping, spinning or spraying processes and the like. The thickness of the coating layer formed of the sol is preferably in the range of about 1 μm to 50 μm. If there is a concern that the uniformity of the coating layer may decrease as the heat treatment process is repeated after coating, it is preferable to obtain a uniform coating layer with a single coating.

Drying is carried out to enhance the bonding strength between the coated particles, and may be divided into several times the first and second drying process. In particular, when drying the sol, it is preferable to allow the dispersant to be dried in stages.

The drying temperature varies slightly depending on the characteristics of the base metal, but can usually proceed at about 80 to 130 ° C.

3. (co) sintering of coating layer

The monolayer or multilayer coating layer produced by the above process becomes a dense film by sintering. The sintering atmosphere varies depending on the type of coating layer, and in the case of oxide, an atmospheric atmosphere, in the case of carbide and nitride, a vacuum atmosphere, an inert or reducing atmosphere is applied. One of the advantages of using a sol is that the sintering temperature can be lowered below 1300 ° C. Representative sintering conditions are made for 30 minutes to 120 minutes at 1300 ℃ or less, preferably lower the sintering temperature to 800 ℃ or less. However, the sintering temperature is slightly different depending on whether or not the base material to be applied, for example, SiO ₂ applied metal.

In particular, since the sintering temperature of the coating layer formed of the sol is lowered to 800 ° C. or lower, when the coating is formed on the surface of the molded body and there is a concern that the sintering of the molded body may not be completed, the coating layer is formed on the sintered body made by sintering the molded body in advance. It may be desirable to sinter only the coating layer at low temperatures after application.

Since the polymer contained in the binder is removed at around 250 ° C., it is preferable to have a holding time at about 250 ° C. and 500 ° C., and to cool after holding for 1 hour at 800 ° C., which is a sintering temperature. After the sintering process, the plasma sintered body may be cleaned or further heat treated to remove contaminants that may be present in the coating layer pores.

Experimental Example 3

Tables 3 to 5 are experiments in which Al ₂ O ₃ , SiO ₂ sintered body and aluminum 6061 base material were coated using Al ₂ O ₃ , Y ₂ O ₃ , and mullite sol prepared in the same manner as in the above detailed process. Here is an example. The sol prepared in advance on the target base material is coated by spin coating and then dried in a dry oven at 100 ° C. for 15 minutes. The reason for drying in the dry oven at this time is to remove the primary solvent. When the drying was completed, as shown in Tables 3 to 5, the temperature was raised to 5 ° C. per minute under atmospheric conditions, and then 300 ° C., 800 ° C., and 1200 ° C. were maintained for 1 hour, and then naturally cooled at the highest point. However, in the case of the aluminum base material in consideration of the melting point of the aluminum itself 450 ℃, after coating the sol on the aluminum base material only to proceed the heat treatment of 300 ℃ to prevent damage to the aluminum base material. In addition, in the case of Al ₂ O ₃ base material Al ₂ O ₃ sol coating corresponds to the same type of ceramic coating, it was excluded from the experiment because the improvement of the base material by the coating can not be obtained.

In order to observe the surface roughness change before and after the sol coating, the average surface roughness was measured five times per sample using a surface roughness gauge, and then the average value was taken. In addition, the peel strength of the coating layer was measured by the squeezing tensile test method, after preparing and measuring five samples per condition, the average value is summarized in Tables 3 to 5.

Base material Type of pawn Concentration of sol (wt%) Sintering Temperature (℃) Average surface roughness change (μm) Peel Strength (N / mm ² ) Sample number Al ₂ O ₃ Y ₂ O ₃ 5 300 0.3 13.7 One 800 0.31 16.4 2 1200 0.3 17.1 3 10 300 0.54 14.2 4 800 0.51 16.7 5 1200 0.56 17.6 6 15 300 0.61 14.5 7 800 0.67 16.5 8 1200 0.6 17.8 9 Mullite 5 300 0.35 13.5 10 800 0.36 15.5 11 1200 0.38 16.9 12 10 300 0.66 13.6 13 800 0.7 15.8 14 1200 0.72 17 15 15 300 0.68 13.7 16 800 0.75 14.8 17 1200 0.79 16.3 18

Base material Type of pawn Concentration of sol (wt%) Sintering Temperature (℃) Average surface roughness change (μm) Peel Strength (N / mm ² ) Sample number SiO ₂ Y ₂ O ₃ 5 300 0.3 13.8 19 800 0.34 14.8 20 1200 0.4 16 21 10 300 0.5 13.9 22 800 0.59 15.5 23 1200 0.64 17 24 15 300 0.7 13.5 25 800 0.75 15 26 1200 0.8 17.3 27 Al ₂ O ₃ 5 300 0.4 13.4 28 800 0.45 16 29 1200 0.48 17.2 30 10 300 0.58 13.5 31 800 0.6 16.2 32 1200 0.65 18 33 15 300 0.8 13.8 34 800 0.83 14.3 35 1200 0.9 16.7 36 Mullite 5 300 0.5 13.4 37 800 0.52 15.9 38 1200 0.59 17.8 39 10 300 0.58 13.4 40 800 0.6 14.6 41 1200 0.63 17.2 42 15 300 0.68 13.9 43 800 0.75 15.6 44 1200 0.78 17.7 45

Base material Type of pawn Concentration of sol (wt%) Sintering Temperature (℃) Average surface roughness change (μm) Peel Strength (N / mm ² ) Sample number aluminum Y ₂ O ₃ 5 300 0.34 14.3 46 10 0.48 14.3 47 15 0.65 14.6 48 Al ₂ O ₃ 5 300 0.3 13.5 49 10 0.4 13.9 50 15 0.59 14.3 51 Mullite 5 300 0.3 13.5 52 10 0.5 14 53 15 0.65 14.2 54

The surface roughness before and after coating increased after coating, but the value was adjusted to 1 탆 or less. The thickness of the coating layer was controlled by the solid concentration of the sol, it can be seen that the coating thickness of about 15㎛ can be obtained. After sintering and sintering under each condition, the pores formed in the coating layer were analyzed. As a result, the average porosity of the measured specimens was found to be controlled at 5% or less. Considering that the porosity in the coating layer is formed by about 15% by the conventional plasma spray coating, it can be seen that an extremely small amount of pores is distributed in the coating layer according to the present invention.

In the case of the SiO ₂ sintered body in consideration of the heat deformation temperature is formed at 1200 ℃ to 1300 ℃ limited the sintering temperature after the sol coating to 1200 ℃, it was confirmed that a slight deformation of the base material after the heat treatment of 1200 ℃. Thus, in the case of SiO ₂ sintered body it could be confirmed that the sintering of the coating layer should proceed at 1200 ℃ or less. Furthermore, when analyzing the peel strength of the coating layer according to the sintering conditions, it can be confirmed that the value of the SiO ₂ sintered body is the largest at 800 ℃.

As a result of analyzing the peel strength of the coating layer according to the coating conditions, respectively, when coating Y ₂ O ₃ or mullite on the Al ₂ O ₃ sintered body, Sample No. 9 and 15 had the highest peel strength, and the SiO ₂ sintered body The highest peel strengths were found in samples 23, 32, 38, 48, 51 and 54, respectively.

The coating layer formed by the above-described configuration is excellent in chemical resistance and corrosion resistance in a semiconductor and display manufacturing process using halogen gas as a process gas. In particular, internal materials of semiconductor and display manufacturing apparatuses having processes such as etching process, ashing process, plasma CVD process, PVD process, sputtering and ion implantation process, photo, evaporation, diffusion, or the like, various liners, plates The coating method of the present invention can be applied to internal materials such as), gas distribution plates, and windows.

As described above, in the present invention, by applying a slurry or sol prepared in advance to a desired base, and then sintering or co-sintering, a resist can be formed on the inner material exposed to the plasma of the halogen gas. Not only is this shortened, but also the manufacturing cost can be greatly reduced by using most of the member (internal matrix) as a low-grade raw material and only forming the coating layer with a desired composition (mostly high purity).

In addition, in the conventional plasma spray coating method, an expensive agglomerated spherical powder should be used, whereas in the coating method of the present invention, since a low-cost general powder is used, the plasma spray coating method has a lower cost than the plasma spray coating powder requiring secondary processing of raw materials. Much more advantageous. In addition, an expensive apparatus for realizing the plasma spray coating method is not required.

Furthermore, the present invention can easily form the roughness of the matrix surface in the form of a molded or pre-sintered body, so that the peel strength of the coating film can be easily controlled. Conventionally, in order to increase the interfacial peel strength of the coating film, the surface of the sintered compact was bead blasted, but in this case, the surface of the sintered compact was damaged and the breakage of brittle materials due to the accumulation of micro stresses could not be avoided, which lowered the reliability of the product. There was a problem. According to this invention, since the peeling strength is excellent, the internal material provided with the resist which is excellent in adhesiveness with a ceramic base material can be easily provided.

In addition, the porosity in the membrane can also be easily adjusted by changing the production conditions, such as sintering temperature, time, atmosphere and pressure, or by changing the composition. As can be seen from the experimental results, in the case of the present invention, a more dense and higher quality coating layer is obtained. Therefore, it is difficult for particles due to corrosion to float in the space in the plasma vessel, or to fall and deposit on other members in the vessel. Since contamination by particles is small, it becomes possible to produce high quality products efficiently. And since the contamination rate by the particle | grains in a container is slow, the space | interval of a cleaning operation is long and the downtime of an apparatus is reduced, and productivity improves. In addition, radicals such as F and Cl in the semiconductor process are less likely to penetrate into the base, and less damage occurs, and even if the wet cleaning for recycling is applied, there is less risk of the acid and alkali components used in the wet process being sucked into the capillary phenomenon in the thin film.

The present invention is applied to the internal materials of semiconductor devices and display manufacturing apparatus by incliningly controlling physical properties such as composition, particle size, porosity, toughness, thermal properties, density, and plasma properties of intermediate or outer layers while forming a multilayer coating layer. When applying the inner material according to the can be expected to increase the particle generation in the container, increase the life of parts, increase the replacement cycle of parts, increase the process yield during wafer manufacturing, improve productivity, reduce the defective rate.

Claims (15)

Forming a ceramic coating layer on the base surface of the ceramic molded body by using a coating method; And And co-sintering the base on which the ceramic coating layer is formed. Forming a ceramic coating layer on the base surface of the metal or ceramic sintered body by using a coating method; And And sintering the base on which the ceramic coating layer is formed. The method of claim 1, wherein the ceramic coating layer is formed in a single layer or multiple layers, and is formed of an oxide-based, carbide-based, nitride-based, or boride-based ceramic. The method of claim 1 or 2, wherein the ceramic coating layer is formed in multiple layers, and the type of each coating layer is varied, or the concentration of a specific component is inclined. The method of manufacturing an inner material according to claim 1 or 2, wherein the form of the coating material used in the coating method uses a slurry or a sol containing ceramic powder to be coated. The method of claim 1, wherein a small amount of SiC whisker or BN powder is added to the components of the ceramic coating layer by about 1 wt% to 10 wt% to adjust the porosity of the intermediate layer. . Preparing a sol containing ceramic powder to be coated; Forming a ceramic coating layer by applying the sol to a matrix surface of a metal or ceramic sintered body; Step drying the ceramic coating layer; And And a step of sintering the base on which the ceramic coating layer is formed at 1200 ° C. or less. The method of claim 7, wherein preparing the sol, Mixing 1% or less of a dispersant such as glycol and acetate having different volatilization temperatures and 75 to 95% of an organic solvent with 0.5% to 2% of a binder; And And adding a powder of 5 to 20 wt% to the organic solvent including the mixed dispersant and the binder to form a sol. The inside of the plasma processing vessel according to claim 8, wherein the organic solvent comprises 25 to 35% of a solvent made by mixing methanol and SiO ₂ and 50 to 60% of one or more solvents of methyl, ethyl and IPA. Method of making ash. After forming a ceramic coating layer using a coating method on the surface of the substrate, the ceramic coating layer is sintered to form a resist film, characterized in that the plasma processing vessel inner material. The method of claim 10, wherein the ceramic coating layer is a single layer or a multilayer, Al ₂ O ₃ , Y ₂ O ₃ , ZrO ₂ , YAG, YAM, mullite, AlON, PSZ, MgO, TiO ₂ , Nb ₂ O ₅ , HfO ₂ , ThO ₂ , Cr ₂ O ₃ , SiC, B ₄ C, TaC, TiC, AlN, Si ₃ N ₄ , TiN, CrN, BN, TiB ₂ or ZrB ₂ , characterized in that the internal material. 11. The inner material according to claim 10, wherein the total thickness of the ceramic coating layer is in the range of 1 µm to 2000 µm. 11. The inner material according to claim 10, further comprising an intermediate layer containing pores directly on the matrix. The inner material according to claim 10, wherein the Al ₂ O ₃ component is increased near the base, and the composition is inclined so that Y ₂ O ₃ of the coating layer is increased toward the outer layer. The method of claim 10, wherein the matrix is Al ₂ O ₃ , ZrO ₂ , Partially Stabilized Zirconia (PSZ), AlON, TiO ₂ , SiC, B ₄ C, TaC, TiC, AlN, Si ₃ N ₄ , BN, TiN, TiB ₂ , ZrB ₂ , Mo, W, Ta, Al, quartz, silicon, carbon, YAG or mullite material, characterized in that the inner material.