KR20040012611A - 전기화학적 기계적 연마를 위한 전도성 연마 부품 - Google Patents

전기화학적 기계적 연마를 위한 전도성 연마 부품 Download PDF

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Publication number
KR20040012611A
KR20040012611A KR1020030053639A KR20030053639A KR20040012611A KR 20040012611 A KR20040012611 A KR 20040012611A KR 1020030053639 A KR1020030053639 A KR 1020030053639A KR 20030053639 A KR20030053639 A KR 20030053639A KR 20040012611 A KR20040012611 A KR 20040012611A
Authority
KR
South Korea
Prior art keywords
conductive
ball
housing
abrasive
disposed
Prior art date
Application number
KR1020030053639A
Other languages
English (en)
Korean (ko)
Inventor
폴디. 버터필드
리앙-유 첸
용키 휴
안토니피. 매넨스
라시드 마브리브
스탠디. 티사이
펭큐. 리유
랄프 와덴스웨일러
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/210,972 external-priority patent/US7303662B2/en
Priority claimed from US10/211,626 external-priority patent/US7125477B2/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20040012611A publication Critical patent/KR20040012611A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020030053639A 2002-08-02 2003-08-02 전기화학적 기계적 연마를 위한 전도성 연마 부품 KR20040012611A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/210,972 US7303662B2 (en) 2000-02-17 2002-08-02 Contacts for electrochemical processing
US10/211,626 2002-08-02
US10/210,972 2002-08-02
US10/211,626 US7125477B2 (en) 2000-02-17 2002-08-02 Contacts for electrochemical processing
US???? 2005-12-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020070100296A Division KR20070104870A (ko) 2002-08-02 2007-10-05 전기화학적 기계적 연마를 위한 전도성 연마 부품

Publications (1)

Publication Number Publication Date
KR20040012611A true KR20040012611A (ko) 2004-02-11

Family

ID=37320419

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030053639A KR20040012611A (ko) 2002-08-02 2003-08-02 전기화학적 기계적 연마를 위한 전도성 연마 부품

Country Status (3)

Country Link
KR (1) KR20040012611A (zh)
CN (1) CN100466188C (zh)
TW (1) TWI300026B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140092118A (ko) * 2013-01-15 2014-07-23 주식회사 엘지실트론 마운팅 유닛

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103912779B (zh) * 2012-12-28 2016-12-28 财团法人金属工业研究发展中心 润滑流体补充结构及振动装置
CN109243976B (zh) 2013-01-11 2023-05-23 应用材料公司 化学机械抛光设备及方法
CN104894634A (zh) * 2014-03-03 2015-09-09 盛美半导体设备（上海）有限公司 新型电化学抛光装置
CN109082084B (zh) * 2018-07-04 2021-06-29 温州大学 一种具有纳米孔道的高分子膜及其制备方法
CN112059895A (zh) * 2020-07-27 2020-12-11 浙江工业大学 基于氧化膜状态主动控制的轴承滚子elid研磨方法
CN114193241B (zh) * 2021-12-22 2023-08-04 景德镇明兴航空锻压有限公司 一种航空发动机叶片磨抛装置及使用方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000042900A (ja) * 1998-07-23 2000-02-15 Toshiba Mach Co Ltd Ｃｍｐ研磨装置
US6497800B1 (en) * 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
JP3877128B2 (ja) * 2000-06-26 2007-02-07 東邦エンジニアリング株式会社 半導体ｃｍｐ加工用パッドの細溝加工機械
JP3497492B2 (ja) * 2001-11-02 2004-02-16 東邦エンジニアリング株式会社 半導体デバイス加工用硬質発泡樹脂溝付パッド及びそのパッド旋削溝加工用工具

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140092118A (ko) * 2013-01-15 2014-07-23 주식회사 엘지실트론 마운팅 유닛

Also Published As

Publication number Publication date
CN1495863A (zh) 2004-05-12
TW200407215A (en) 2004-05-16
TWI300026B (en) 2008-08-21
CN100466188C (zh) 2009-03-04

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E902 Notification of reason for refusal
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