KR20030080183A - 폴리머 내 피쳐 제조 방법 및 광-기계적 패턴 임프린팅마스크 - Google Patents

폴리머 내 피쳐 제조 방법 및 광-기계적 패턴 임프린팅마스크 Download PDF

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Publication number
KR20030080183A
KR20030080183A KR10-2003-0004161A KR20030004161A KR20030080183A KR 20030080183 A KR20030080183 A KR 20030080183A KR 20030004161 A KR20030004161 A KR 20030004161A KR 20030080183 A KR20030080183 A KR 20030080183A
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KR
South Korea
Prior art keywords
polymer
ultraviolet light
mechanical
radiation
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2003-0004161A
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English (en)
Korean (ko)
Inventor
메이핑
타우시그칼피
진알버트에이치
Original Assignee
휴렛-팩커드 컴퍼니(델라웨어주법인)
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Publication of KR20030080183A publication Critical patent/KR20030080183A/ko
Withdrawn legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Thin Film Transistor (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR10-2003-0004161A 2002-01-23 2003-01-22 폴리머 내 피쳐 제조 방법 및 광-기계적 패턴 임프린팅마스크 Withdrawn KR20030080183A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/058,744 US6653030B2 (en) 2002-01-23 2002-01-23 Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features
US10/058,744 2002-01-23

Publications (1)

Publication Number Publication Date
KR20030080183A true KR20030080183A (ko) 2003-10-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-0004161A Withdrawn KR20030080183A (ko) 2002-01-23 2003-01-22 폴리머 내 피쳐 제조 방법 및 광-기계적 패턴 임프린팅마스크

Country Status (7)

Country Link
US (1) US6653030B2 (https=)
EP (1) EP1331516B1 (https=)
JP (1) JP4242145B2 (https=)
KR (1) KR20030080183A (https=)
CN (1) CN1434349A (https=)
DE (1) DE60310460T2 (https=)
TW (1) TWI271785B (https=)

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KR101381252B1 (ko) * 2007-06-05 2014-04-04 삼성디스플레이 주식회사 임프린트 장치, 이의 제조 방법 및 이를 이용한 박막패터닝 방법
US9308616B2 (en) 2013-01-21 2016-04-12 Innovative Finishes LLC Refurbished component, electronic device including the same, and method of refurbishing a component of an electronic device
KR102552654B1 (ko) * 2022-10-12 2023-07-06 주식회사 기가레인 디몰더 장치 및 이를 이용한 디몰딩 방법
US11904522B2 (en) 2017-09-29 2024-02-20 Canon Kabushiki Kaisha Imprint apparatus and method for manufacturing article

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KR101016960B1 (ko) * 2003-12-30 2011-02-28 엘지디스플레이 주식회사 액정표시장치용 어레이 기판의 제조 방법
KR101381252B1 (ko) * 2007-06-05 2014-04-04 삼성디스플레이 주식회사 임프린트 장치, 이의 제조 방법 및 이를 이용한 박막패터닝 방법
US8986909B2 (en) 2007-06-05 2015-03-24 Samsung Display Co., Ltd. Imprinting device, method of fabricating the same, and method of patterning thin film using the same
US9308616B2 (en) 2013-01-21 2016-04-12 Innovative Finishes LLC Refurbished component, electronic device including the same, and method of refurbishing a component of an electronic device
US11904522B2 (en) 2017-09-29 2024-02-20 Canon Kabushiki Kaisha Imprint apparatus and method for manufacturing article
KR102552654B1 (ko) * 2022-10-12 2023-07-06 주식회사 기가레인 디몰더 장치 및 이를 이용한 디몰딩 방법

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TWI271785B (en) 2007-01-21
JP2003249444A (ja) 2003-09-05
JP4242145B2 (ja) 2009-03-18
EP1331516A3 (en) 2003-10-15
TW200302506A (en) 2003-08-01
CN1434349A (zh) 2003-08-06
DE60310460D1 (de) 2007-02-01
US6653030B2 (en) 2003-11-25
EP1331516A2 (en) 2003-07-30
DE60310460T2 (de) 2007-12-13
EP1331516B1 (en) 2006-12-20

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