CN1434349A - 包括微米和亚微米特征的半导体等器件的光机械特征制作 - Google Patents

包括微米和亚微米特征的半导体等器件的光机械特征制作 Download PDF

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Publication number
CN1434349A
CN1434349A CN03103377A CN03103377A CN1434349A CN 1434349 A CN1434349 A CN 1434349A CN 03103377 A CN03103377 A CN 03103377A CN 03103377 A CN03103377 A CN 03103377A CN 1434349 A CN1434349 A CN 1434349A
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CN
China
Prior art keywords
mechanical
polymer
opto
mask
features
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN03103377A
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English (en)
Chinese (zh)
Inventor
P·梅
C·P·陶西
A·H·简斯
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HP Inc
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Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1434349A publication Critical patent/CN1434349A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Thin Film Transistor (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN03103377A 2002-01-23 2003-01-23 包括微米和亚微米特征的半导体等器件的光机械特征制作 Pending CN1434349A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/058,744 US6653030B2 (en) 2002-01-23 2002-01-23 Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features
US10/058744 2002-01-23

Publications (1)

Publication Number Publication Date
CN1434349A true CN1434349A (zh) 2003-08-06

Family

ID=22018665

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03103377A Pending CN1434349A (zh) 2002-01-23 2003-01-23 包括微米和亚微米特征的半导体等器件的光机械特征制作

Country Status (7)

Country Link
US (1) US6653030B2 (https=)
EP (1) EP1331516B1 (https=)
JP (1) JP4242145B2 (https=)
KR (1) KR20030080183A (https=)
CN (1) CN1434349A (https=)
DE (1) DE60310460T2 (https=)
TW (1) TWI271785B (https=)

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CN101666974A (zh) * 2005-09-06 2010-03-10 佳能株式会社 用于生产结构的模具、印痕设备以及工艺
CN101124089B (zh) * 2004-01-12 2011-02-09 加利福尼亚大学董事会 纳米级电子光刻
CN103097953A (zh) * 2010-08-23 2013-05-08 罗利诗公司 近场平版印刷掩模及其制造
WO2021219005A1 (zh) * 2020-04-29 2021-11-04 中国科学院光电技术研究所 一种微纳结构的制备方法
US11904522B2 (en) 2017-09-29 2024-02-20 Canon Kabushiki Kaisha Imprint apparatus and method for manufacturing article

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CN101124089B (zh) * 2004-01-12 2011-02-09 加利福尼亚大学董事会 纳米级电子光刻
CN101666974A (zh) * 2005-09-06 2010-03-10 佳能株式会社 用于生产结构的模具、印痕设备以及工艺
CN1928712B (zh) * 2005-09-06 2011-02-16 佳能株式会社 用于生产结构的模具及印痕设备
US8011916B2 (en) 2005-09-06 2011-09-06 Canon Kabushiki Kaisha Mold, imprint apparatus, and process for producing structure
CN101666974B (zh) * 2005-09-06 2012-09-26 佳能株式会社 印痕形成方法及设备和用印痕形成法来生产结构的方法
CN103097953A (zh) * 2010-08-23 2013-05-08 罗利诗公司 近场平版印刷掩模及其制造
US11904522B2 (en) 2017-09-29 2024-02-20 Canon Kabushiki Kaisha Imprint apparatus and method for manufacturing article
WO2021219005A1 (zh) * 2020-04-29 2021-11-04 中国科学院光电技术研究所 一种微纳结构的制备方法
US11675273B2 (en) 2020-04-29 2023-06-13 The Institute Of Optics And Electronics, The Chinese Academy Of Sciences Method of fabricating micro-nano structure

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TWI271785B (en) 2007-01-21
KR20030080183A (ko) 2003-10-11
JP2003249444A (ja) 2003-09-05
JP4242145B2 (ja) 2009-03-18
EP1331516A3 (en) 2003-10-15
TW200302506A (en) 2003-08-01
DE60310460D1 (de) 2007-02-01
US6653030B2 (en) 2003-11-25
EP1331516A2 (en) 2003-07-30
DE60310460T2 (de) 2007-12-13
EP1331516B1 (en) 2006-12-20

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