KR20030049259A - 액정 표시 장치 - Google Patents
액정 표시 장치 Download PDFInfo
- Publication number
- KR20030049259A KR20030049259A KR1020010079422A KR20010079422A KR20030049259A KR 20030049259 A KR20030049259 A KR 20030049259A KR 1020010079422 A KR1020010079422 A KR 1020010079422A KR 20010079422 A KR20010079422 A KR 20010079422A KR 20030049259 A KR20030049259 A KR 20030049259A
- Authority
- KR
- South Korea
- Prior art keywords
- pixel
- data
- gate
- blue
- data line
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 83
- 239000010409 thin film Substances 0.000 claims abstract description 50
- 239000010408 film Substances 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 239000011810 insulating material Substances 0.000 claims abstract description 11
- 238000003860 storage Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 10
- 238000009877 rendering Methods 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 27
- 239000003990 capacitor Substances 0.000 abstract description 26
- 239000010410 layer Substances 0.000 description 53
- 239000011159 matrix material Substances 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910020177 SiOF Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- -1 (Mo) Substances 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133519—Overcoatings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
Abstract
Description
Claims (13)
- 행 방향으로는 적, 청, 녹 화소가 순차적으로 배열되어 있으며, 열 방향으로는 적 및 녹 화소는 교대로 배열되어 있고 상기 청 화소는 동일하게 배열되어 있으며, 상기 청 화소는 이웃하는 상기 적 및 녹 화소 사이에서 두 화소 행에 대하여 하나씩 배열되어 있어 상기 청 화소에 이웃하는 상기 적 및 녹의 네 화소는 상기 청 화소를 중심에 마주하도록 배치되어 있는 화소 배열,가로 방향으로 상기 화소 행에 대하여 각각 배치되어 있으며, 상기 화소에 주사 신호 또는 게이트 신호를 전달하는 게이트선,세로 방향으로 상기 게이트선과 절연 교차하여 배치되어 있으며, 화상 또는 데이터 신호를 전달하며 상기 화소 열에 대하여 각각 배치되어 있는 데이터선,상기 게이트선 및 상기 데이터선을 덮고 있으며, 아크릴계의 유기 절연 물질 또는 화학 기상 증착법을 통하여 형성된 4.0이하의 저유전율 절연 물질로 이루어진보호막,상기 화소에 각각 배치되어 있으며, 가장자리 부분은 상기 보호막을 매개로 상기 게이트선 또는 데이터선과 중첩되어 있는 화소 전극, 및상기 화소에 각각 배치되어 있으며 상기 게이트선과 연결되어 있는 게이트 전극, 상기 데이터선과 연결되어 있는 소스 전극 및 상기 화소 전극과 연결되어 있는 드레인 전극을 포함하는 박막 트랜지스터를 포함하는 액정 표시 장치.
- 제1항에서,상기 액정 표시 장치는 렌더링 구동 기법으로 구동하는 액정 표시 장치.
- 제1항에서,상기 화소 전극은 이웃하는 전단의 상기 화소 행에 상기 주사 또는 게이트 신호를 전달하는 전단의 상기 게이트선 또는 상기 게이트선과 분리되어 있으며 상기 게이트선과 동일한 층으로 형성되어 있는 유지 용량용 전극과 중첩하여 유지 용량을 형성하는 액정 표시 장치.
- 제1항에서,이웃하는 두 청의 상기 화소 열을 단위로 상기 화소 열에 상기 데이터 신호를 전달하는 상기 데이터선을 하나의 패드로 연결하는 데이터 패드 연결부를 더 포함하는 액정 표시 장치.
- 제1항에서,상기 화소 전극은 투명한 도전 물질 또는 반사도를 가지는 도전 물질로 이루어진 액정 표시 장치.
- 제1항에서,상기 소정의 단위는 아홉 화소 열이며, n+4 번째 청 화소 열의 상기 데이터선은 n+1 번째 청 화소 열의 상기 데이터선에 전기적으로 연결되어 화상 신호를 전달하고 n+7 번째 청 화소 열의 상기 데이터선은 n+10 번째 청 화소 열의 상기 데이터선에 전기적으로 연결되어 화상 신호를 전달하며, n+5 번째의 녹 화소 열의 상기 데이터선과 n+6 번째의 적 화소 열의 상기 데이터선은 서로 교차되어 화상 신호를 전달하는 액정 표시 장치.
- 제1항에서,상기 소정의 단위는 아홉 화소 열이며, n+10 번째 청 화소 열의 상기 데이터선은 n+1 번째 청 화소 열의 상기 데이터선에 전기적으로 연결되어 화상 신호를 전달하고 n+7 번째 청 화소 열의 상기 데이터선은 n+4 번째 청 화소 열의 상기 데이터선에 전기적으로 연결되어 화상 신호를 전달하며, n+8 번째의 녹 화소 열의 상기 데이터선과 n+9 번째의 적 화소 열의 상기 데이터선은 서로 교차되어 화상 신호를 전달하는 액정 표시 장치.
- 제1항에서,상기 소정의 단위는 아홉 화소 열이며, n+7 번째 청 화소 열의 상기 데이터선은 n+1 번째 청 화소 열의 상기 데이터선에 전기적으로 연결되어 화상 신호를 전달하고 n+10 번째 청 화소 열의 상기 데이터선은 n+4 번째 청 화소 열의 상기 데이터선에 전기적으로 연결되어 화상 신호를 전달하며, n+8 번째의 녹 화소 열의 상기데이터선과 n+9 번째의 적 화소 열의 상기 데이터선은 서로 교차되어 화상 신호를 전달하는 액정 표시 장치.
- 제8항에서,상기 액정 표시 장치는 열 방향에 대하여 칼럼 반전을 적용하는 액정 표시 장치.
- 제8항에서,상기 액정 표시 장치는 행 방향에 대하여 2 도트 반전을 적용하는 액정 표시 장치.
- 제10항에서,상기 청 화소에는 상기 화소 행에 대하여 각각 부 화소 전극이 형성되어 있으며, 두 개의 상기 부 화소 전극은 화소 전극 연결부를 통하여 연결되어 있는 액정 표시 장치.
- 제11항에서,상기 두 행의 상기 화소 열에서 상기 화소 전극 연결부는 교대로 배치되어 있는 액정 표시 장치.
- 제1항에서,일부 상기 데이터선은 상기 데이터선에 연결된 데이터 패드를 통하여 상기 적 또는 녹 화소 열의 상기 데이터선에 전달되는 화상 신호를 교차시켜 전달하는 교차용 배선을 가지는 액정 표시 장치.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010079422A KR100864488B1 (ko) | 2001-12-14 | 2001-12-14 | 액정 표시 장치 |
JP2003551602A JP4195387B2 (ja) | 2001-11-23 | 2002-02-26 | 液晶表示装置 |
AU2002235022A AU2002235022A1 (en) | 2001-11-23 | 2002-02-26 | A thin film transistor array for a liquid crystal display |
US10/470,116 US7075601B2 (en) | 2001-11-23 | 2002-02-26 | Thin film transistor array for a liquid crystal display having a data line cross-connection |
CNB028270169A CN100470338C (zh) | 2001-11-23 | 2002-02-26 | 用于液晶显示器的薄膜晶体管阵列 |
PCT/KR2002/000318 WO2003050605A1 (en) | 2001-11-23 | 2002-02-26 | A thin film transistor array for a liquid crystal display |
TW091103970A TWI290258B (en) | 2001-11-23 | 2002-03-04 | A thin film transistor array for a liquid crystal display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010079422A KR100864488B1 (ko) | 2001-12-14 | 2001-12-14 | 액정 표시 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030049259A true KR20030049259A (ko) | 2003-06-25 |
KR100864488B1 KR100864488B1 (ko) | 2008-10-20 |
Family
ID=29575079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010079422A KR100864488B1 (ko) | 2001-11-23 | 2001-12-14 | 액정 표시 장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100864488B1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100465025B1 (ko) * | 2001-12-29 | 2005-01-05 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치 |
KR100859515B1 (ko) * | 2002-05-03 | 2008-09-22 | 삼성전자주식회사 | 액정 표시 장치, 그의 구동 장치 및 구동 방법 |
KR101143001B1 (ko) * | 2005-03-31 | 2012-05-09 | 삼성전자주식회사 | 액정 표시 장치 |
USRE46497E1 (en) | 2005-03-09 | 2017-08-01 | Samsung Display Co., Ltd. | Liquid crystal display apparatus having data lines with curved portions and method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960016796B1 (ko) * | 1993-03-19 | 1996-12-21 | 삼성전자 주식회사 | 액정표시장치 및 그 제조방법 |
JPH07122712B2 (ja) * | 1993-08-05 | 1995-12-25 | シャープ株式会社 | カラー液晶表示装置 |
JPH11142867A (ja) * | 1997-11-05 | 1999-05-28 | Seiko Epson Corp | 液晶表示装置 |
JP4128677B2 (ja) * | 1998-11-24 | 2008-07-30 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示装置の検査方法 |
JP2001042287A (ja) * | 1999-07-30 | 2001-02-16 | Sony Corp | 液晶表示装置およびその駆動方法 |
-
2001
- 2001-12-14 KR KR1020010079422A patent/KR100864488B1/ko active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100465025B1 (ko) * | 2001-12-29 | 2005-01-05 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치 |
KR100859515B1 (ko) * | 2002-05-03 | 2008-09-22 | 삼성전자주식회사 | 액정 표시 장치, 그의 구동 장치 및 구동 방법 |
USRE46497E1 (en) | 2005-03-09 | 2017-08-01 | Samsung Display Co., Ltd. | Liquid crystal display apparatus having data lines with curved portions and method |
KR101143001B1 (ko) * | 2005-03-31 | 2012-05-09 | 삼성전자주식회사 | 액정 표시 장치 |
Also Published As
Publication number | Publication date |
---|---|
KR100864488B1 (ko) | 2008-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100870003B1 (ko) | 액정 표시 장치 | |
KR100806897B1 (ko) | 액정 표시 장치 | |
KR100890024B1 (ko) | 액정 표시 장치 | |
JP4195387B2 (ja) | 液晶表示装置 | |
KR101179233B1 (ko) | 액정표시장치 및 그 제조방법 | |
KR100848099B1 (ko) | 액정 표시 장치용 박막 트랜지스터 기판 | |
KR100997965B1 (ko) | 액정 표시 장치 | |
KR100973810B1 (ko) | 4색 액정 표시 장치 | |
KR101319595B1 (ko) | 액정 표시 장치 | |
KR101267496B1 (ko) | 액정 표시 장치 | |
KR20040020317A (ko) | 액정 표시 장치 및 그 구동 방법 | |
KR100825105B1 (ko) | 액정 표시 장치 | |
KR100925454B1 (ko) | 액정 표시 장치 | |
KR20080047788A (ko) | 액정 표시 장치 | |
KR100816338B1 (ko) | 액정 표시 장치 | |
KR100864488B1 (ko) | 액정 표시 장치 | |
KR100825104B1 (ko) | 액정 표시 장치 | |
KR100920345B1 (ko) | 액정 표시 장치 | |
KR20070080349A (ko) | 액정 표시 장치 | |
KR20050002229A (ko) | 평면 표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120914 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20130930 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20141001 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20150930 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20170928 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20181001 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20191001 Year of fee payment: 12 |