KR20030045456A - Structure of repair line in tft liquid crystal display device - Google Patents
Structure of repair line in tft liquid crystal display device Download PDFInfo
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- KR20030045456A KR20030045456A KR1020010076180A KR20010076180A KR20030045456A KR 20030045456 A KR20030045456 A KR 20030045456A KR 1020010076180 A KR1020010076180 A KR 1020010076180A KR 20010076180 A KR20010076180 A KR 20010076180A KR 20030045456 A KR20030045456 A KR 20030045456A
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- 230000008439 repair process Effects 0.000 title claims abstract description 103
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000003466 welding Methods 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 230000005611 electricity Effects 0.000 abstract description 8
- 230000003068 static effect Effects 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 5
- XOMKZKJEJBZBJJ-UHFFFAOYSA-N 1,2-dichloro-3-phenylbenzene Chemical compound ClC1=CC=CC(C=2C=CC=CC=2)=C1Cl XOMKZKJEJBZBJJ-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Power Engineering (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
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Abstract
Description
본 발명은 박막 트랜지스터 액정표시장치의 리페어 라인 구조에 관한 것으로, 특히 데이타 오픈 결함을 리페어 하기 위해 삽입한 리페어 리던던시 라인으로 인해 모듈 공정시 발생된 정전기로 인해 발생되는 라인 휘선과 구동시 발생되는 화면 출력 이상과 같은 화질 저하 문제를 방지할 수 있는 박막 트랜지스터 액정표시장치의 리페어 라인 구조에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a repair line structure of a thin film transistor liquid crystal display, and in particular, a line curve generated by static electricity generated during module processing due to a repair redundancy line inserted to repair data open defects, and a screen output generated during driving. The present invention relates to a repair line structure of a thin film transistor liquid crystal display device capable of preventing the above-described problem of deterioration of image quality.
일반적으로, 리페어 리던던시 라인(repair redundancy line)은 데이타 오픈 결함(Data open defect)을 리페어하기 위해 형성된다. 상기 리페어 리던던시 라인을 형성하는 방법은 패널의 많은 영역에 대해서 데이타 오픈을 리페어할 수 있도록, 또한 리페어 공정을 더욱 단순화하기 위해 꾸준히 개발되어 점점 더 복잡한 양상으로 진행되고 있다.In general, a repair redundancy line is formed to repair a data open defect. The method of forming the repair redundancy line has been steadily developed in order to repair data open to many areas of the panel, and to further simplify the repair process.
도 1은 종래기술에 따른 리페어 라인을 나타낸 형성도로서, 데이타 패드(1), 게이트 패드(2) 및 리페어 라인(3)이 도시되어 있다. 상기 리페어 라인(3)은 액정이 있는 부분에 모두 위치해 있다. 따라서, 상기 리페어 라인(3)은 컬러 필터(C/F) 기판의 공통(common)전극과 커패시터를 형성하게 된다. 만약, 데이타 오픈을 리페어할 경우 신호 라인에 열화(degradation)가 발생되어 일부 영역에 대해서만 데이타 오픈을 리페어 할 수 있기 때문에 리페어 효율이 저하되는 문제점이 있었다.1 is a diagram illustrating a repair line according to the prior art, in which a data pad 1, a gate pad 2, and a repair line 3 are illustrated. The repair line 3 is located at the part where the liquid crystal is present. Therefore, the repair line 3 forms a common electrode and a capacitor of the color filter (C / F) substrate. If the data open is repaired, there is a problem in that the repair efficiency is degraded because degradation of the signal line occurs and only a partial region can be repaired.
이러한 효율 저하 문제를 보상하기 위해 종래에는 도 2에 도시된 바와 같이, 피.씨.비(PCB)(5)를 이용한 리페어 라인(3)을 형성하는 방법이 개발되었다. 그러나, PCB를 이용한 종래의 리페어 라인 형성 방법도 리페어를 진행하는 공정[웰딩(welding), 커팅(cutting)]이 복잡한 문제점이 있었다.In order to compensate for such a problem of deterioration of efficiency, a method of forming a repair line 3 using a PCB 5 is developed. However, a conventional repair line forming method using a PCB also has a complicated problem of a repair process (welding, cutting).
따라서, 리페어 효율도 증가시키고, 공정도 단순화하기 위해 종래에는 도 3에 도시된 바와 같이, PCB(5)를 이용하여 리페어 라인(3)을 부분별로 형성하는 방법이 개발되었다.Therefore, in order to increase the repair efficiency and simplify the process, a method of forming the repair line 3 part by using the PCB 5 has been developed.
하지만, PCB(5)를 이용하여 리페어 라인(3)을 부분별로 형성하는 종래의 기술도 리페어 라인(3)을 추가로 형성함으로써 새로운 문제점이 발생하였다.However, the conventional technique of forming the repair line 3 by part using the PCB 5 also has a new problem by additionally forming the repair line 3.
즉, 모듈 공정에서 정전기가 발생되면 도 4에 도시된 바와 같이, 데이타 오픈 결함을 리페어 하기 위해 삽입한 리페어 라인(3)으로 인해 라인 휘선이 발생되고 또한 구동시에는 화면 출력 이상과 같은 화질 저하 문제가 발생되었다.That is, when static electricity is generated in the module process, as shown in FIG. 4, a line bright line is generated due to the repair line 3 inserted to repair data open defects, and a problem of deterioration in image quality such as an abnormal screen output during driving. Was generated.
따라서, 본 발명은 상기 문제점을 해결하기 위하여 이루어진 것으로, 본 발명의 목적은 데이타 오픈 결함을 리페어 하기 위해 삽입한 리페어 리던던시 라인으로 인해 모듈 공정시 발생된 정전기로 인해 발생되는 라인 휘선과 구동시 발생되는 화면 출력 이상과 같은 화질 저하 문제를 방지하기 위해, 리페어 리던던시 라인을 주변의 다른 배선[공통전극라인(common line), 데이타라인(data line)]과 저항을 사용하여 연결함으로써, 상기와 같은 문제를 방지하고 최종 공정인 모듈에서의 수율을 향상시킨 박막 트랜지스터 액정표시장치의 리페어 라인 구조를 제공하는데 있다.Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is to generate line curves generated by static electricity generated during module processing and driving due to a repair redundancy line inserted to repair data open defects. In order to prevent the problem of deterioration in image quality such as abnormal screen output, the above problem can be solved by connecting the repair redundancy line with other wirings (common line, data line) and resistors. The present invention provides a repair line structure of a thin film transistor liquid crystal display device which prevents and improves a yield in a final process module.
상기 목적을 달성하기 위하여, 본 발명에 의한 박막 트랜지스터 액정표시장치의 리페어 라인 구조는 어레이 기판인 제 1 기판과 컬러 필터인 제 2 기판을 구비한 박막트랜지스터 액정표시장치에 있어서, 상기 제 1 기판에 데이타 오픈이 발생할 경우 이를 리페어하기 위해 형성되는 리페어 라인과, 상기 리페어 라인을 공통전극 라인 또는 데이타 라인과 저항을 통해 연결하여 정전기(ESD) 발생시 정전기 전류를 다른 영역으로 분배하는 것을 특징으로 한다.In order to achieve the above object, the repair line structure of the thin film transistor liquid crystal display device according to the present invention is a thin film transistor liquid crystal display device having a first substrate which is an array substrate and a second substrate which is a color filter. When a data open occurs, a repair line is formed to repair it, and the repair line is connected to the common electrode line or the data line through a resistor to distribute an electrostatic current to another region when an electrostatic discharge (ESD) is generated.
상기 목적을 달성하기 위한 본 발명에 의한 다른 박막트랜지스터 액정표시장치의 리페어 라인 구조는 어레이 기판인 제 1 기판과 컬러 필터인 제 2 기판을 구비한 박막트랜지스터 액정표시장치에 있어서, 상기 제 1 기판에 데이타 오픈이 발생할 경우 이를 리페어하기 위해 형성되는 제 1 리페어 라인과, 상기 제 1 리페어 라인을 인쇄회로기판(PCB)에 연결하기 위해 연장한 제 2 리페어 라인를 구비하며, 상기 제 1 리페어 라인과 상기 제 2 리페어 라인 사이가 연결되지 않도록 적어도 1개 이상의 웰딩 포인트(welding point)를 만들어 웰딩시 데이타 신호가 각 리페어 라인으로 인가되는 것을 방지하는 것을 특징으로 한다.A repair line structure of another thin film transistor liquid crystal display device according to the present invention for achieving the above object is a thin film transistor liquid crystal display device having a first substrate that is an array substrate and a second substrate that is a color filter. And a first repair line formed to repair the data open when a data open occurs, and a second repair line extending to connect the first repair line to a printed circuit board (PCB), wherein the first repair line and the first repair line are provided. At least one welding point is formed to prevent the connection between the two repair lines, thereby preventing the data signal from being applied to each repair line.
상기 웰딩 포인트를 중심으로 공통전극 라인과 연결하기 위한 저항이 적어도 두개 이상 형성된 것을 특징으로 한다.At least two resistors for connecting to the common electrode line are formed around the welding point.
도 1은 종래기술에 따른 리페어 라인의 구조를 나타낸 형성도1 is a view showing the structure of a repair line according to the prior art
도 2는 종래기술에 따른 리페어 동작시 피.시.비(PCB)를 이용한 구조를 나타낸 형성도2 is a view illustrating a structure using a PCB during a repair operation according to the related art.
도 3은 종래기술에 따른 리페어 동작시 피.시.비(PCB)를 이용한 다른 구조를 나타낸 형성도3 is a view illustrating another structure using a PCB during repair operation according to the related art.
도 4는 종래의 리페어 라인 구조에서 정전기 발생에 의한 손상으로 쇼트가 발생되는 것을 설명하기 위한 형성도4 is a view for explaining that a short is generated by damage caused by static electricity in the conventional repair line structure
도 5는 본 발명의 실시예에 의한 리페어 라인 구조를 나타낸 형성도5 is a view showing a repair line structure according to an embodiment of the present invention
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
10, 14 : 리페어 라인12 : 저항10, 14: repair line 12: resistance
16 : 공통전극라인 또는 데이타라인16: common electrode line or data line
이하, 본 발명의 실시예에 관하여 첨부도면을 참조하면서 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 5는 본 발명의 실시예에 의한 리페어 라인 구조를 나타낸 형성도이다.5 is a view illustrating a repair line structure according to an embodiment of the present invention.
도시된 바와 같이, 상기 리페어 라인 구조는 어레이 기판인 제 1 기판과 컬러 필터인 제 2 기판을 구비한 박막트랜지스터 액정표시장치에 있어서, 상기 제 1 기판에 데이타 오픈이 발생할 경우 이를 리페어하기 위해 형성되는 제 1 리페어 라인과, 상기 제 1 리페어 라인을 공통전극 라인 또는 데이타 라인과 저항을 통해 연결하여 정전기(ESD) 발생시 정전기 전류를 다른 영역으로 분배한다. 그리고, 상기 제 1 리페어 라인을 인쇄회로기판(PCB)에 연결하기 위해 연장한 제 2 리페어 라인과, 상기 제 1 리페어 라인과 상기 제 2 리페어 라인 사이가 연결되지 않도록 적어도 1개 이상의 웰딩 포인트(welding point)를 만들어 웰딩시 데이타 신호가 각 리페어 라인으로 인가되는 것을 방지하도록 구성된다. 이때, 상기 웰딩 포인트를 중심으로 공통전극 라인과 연결하기 위한 저항이 적어도 두개 이상 형성된다.As shown in the drawing, the repair line structure includes a thin film transistor liquid crystal display having a first substrate as an array substrate and a second substrate as a color filter, wherein the repair line structure is formed to repair a data open when the first substrate is opened. The first repair line and the first repair line are connected to the common electrode line or the data line through a resistor to distribute the electrostatic current to another region when electrostatic discharge (ESD) is generated. And a second repair line extending to connect the first repair line to the printed circuit board, and at least one welding point such that the first repair line and the second repair line are not connected to each other. point) to prevent the data signal from being applied to each repair line during welding. In this case, at least two resistors for connecting to the common electrode line are formed around the welding point.
즉, 상기 리페어 라인(10)을 형성함에 있어서, 각 데이타 라인과 수직으로 리페어 라인(10)을 형성하고, 상기 리페어 라인(10)을 연장하여 PCB 쪽으로 연결하는 배선(14)을 형성한다. 이때, 리페어 라인(10)의 연장선(14)과 리페어 라인(10)과의 사이가 연결되지 않도록 웰딩 포인트(welding point)(15)를 만들어 두어 웰딩(welding)시 데이타 신호가 각 리페어 라인(10)으로 인가되는 것을 방지한다. 이렇게 형성된 리페어 라인은 셀(cell) 공정이후 전기적으로 독립되어 있으므로, 외부에서 정전기(ESD)가 발생할 경우 다른 영역으로 분배할 수가 없게 된다.That is, in forming the repair line 10, the repair line 10 is formed perpendicular to each data line, and the repair line 10 extends to form a wiring 14 connecting to the PCB. At this time, a welding point 15 is formed so that the extension line 14 of the repair line 10 and the repair line 10 are not connected to each other, so that a data signal is displayed at each repair line 10 during welding. To prevent it from being applied). The repair line formed as described above is electrically independent after the cell process, and thus cannot be distributed to other areas when static electricity (ESD) is generated from the outside.
따라서, 리페어 라인(14)을 공통전극 라인(16)이나 혹은 공통전극 라인(16)이 주변에 없을 경우 인접한 데이타 라인(16)과 저항(12)을 통하여 연결함으로써 정전기(ESD) 발생시 다른 영역으로 분배할 수 있게 된다.Accordingly, when the repair line 14 is connected to the common electrode line 16 or the common electrode line 16 through the adjacent data line 16 and the resistor 12 when the common electrode line 16 is not around, the repair line 14 is moved to another area when ESD is generated. Can be distributed.
이상에서 설명한 바와 같이, 본 발명에 의한 박막 트랜지스터 액정표시장치의 리페어 라인 구조는 리페어 리던던시 라인을 주변의 다른 배선[공통전극라인(common line), 데이타라인(data line)]과 저항을 사용하여 연결함으로써, 데이타 오픈 결함을 리페어 하기 위해 삽입한 리페어 리던던시 라인으로 인해 모듈 공정시 발생된 정전기로 인해 발생되는 라인 휘선과 구동시 발생되는 화면 출력 이상과 같은 화질 저하 문제를 방지하여 최종 공정인 모듈에서의 수율을 향상시킬 수 있는 효과가 있다.As described above, the repair line structure of the thin film transistor liquid crystal display according to the present invention connects the repair redundancy line by using other wirings (common line, data line) and resistors around the periphery. This prevents image quality problems such as line distortion caused by static electricity generated during module processing and abnormal screen output caused during driving due to repair redundancy lines inserted to repair data open defects. There is an effect that can improve the yield.
아울러 본 발명의 바람직한 실시예들은 예시의 목적을 위해 개시된 것이며, 당업자라면 본 발명의 사상과 범위 안에서 다양한 수정, 변경, 부가등이 가능할 것이며, 이러한 수정 변경등은 이하의 특허청구범위에 속하는 것으로 보아야 할 것이다.In addition, preferred embodiments of the present invention are disclosed for the purpose of illustration, those skilled in the art will be able to various modifications, changes, additions, etc. within the spirit and scope of the present invention, these modifications and changes should be seen as belonging to the following claims. something to do.
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| CN110133960A (en) * | 2019-04-19 | 2019-08-16 | 德淮半导体有限公司 | A kind of light shield and preparation method thereof |
| CN110989221A (en) * | 2019-12-20 | 2020-04-10 | 京东方科技集团股份有限公司 | Display substrate, preparation method and repair method thereof and display device |
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| KR100477129B1 (en) * | 1997-08-25 | 2005-07-18 | 삼성전자주식회사 | Liquid crystal display device with repair line |
| KR100483386B1 (en) * | 1997-12-23 | 2005-08-24 | 삼성전자주식회사 | Liquid Crystal Display with Compensation Circuit in Repair |
| KR100293503B1 (en) * | 1998-12-17 | 2001-07-12 | 구본준, 론 위라하디락사 | Thin film transistor type liquid crystal display device and repairing method therefor |
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| CN110133960A (en) * | 2019-04-19 | 2019-08-16 | 德淮半导体有限公司 | A kind of light shield and preparation method thereof |
| CN110989221A (en) * | 2019-12-20 | 2020-04-10 | 京东方科技集团股份有限公司 | Display substrate, preparation method and repair method thereof and display device |
| CN110989221B (en) * | 2019-12-20 | 2022-09-06 | 京东方科技集团股份有限公司 | Display substrate, preparation method and repair method thereof and display device |
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