KR20030041646A - The structure of effusion cell free from condensing of source materials on the entrance - Google Patents

The structure of effusion cell free from condensing of source materials on the entrance Download PDF

Info

Publication number
KR20030041646A
KR20030041646A KR1020010072567A KR20010072567A KR20030041646A KR 20030041646 A KR20030041646 A KR 20030041646A KR 1020010072567 A KR1020010072567 A KR 1020010072567A KR 20010072567 A KR20010072567 A KR 20010072567A KR 20030041646 A KR20030041646 A KR 20030041646A
Authority
KR
South Korea
Prior art keywords
crucible
heating element
heat
entrance
condensing
Prior art date
Application number
KR1020010072567A
Other languages
Korean (ko)
Inventor
윤종만
백민
Original Assignee
(주)알파플러스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)알파플러스 filed Critical (주)알파플러스
Priority to KR1020010072567A priority Critical patent/KR20030041646A/en
Publication of KR20030041646A publication Critical patent/KR20030041646A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/543Controlling the film thickness or evaporation rate using measurement on the vapor source

Abstract

PURPOSE: A structure of crucible type effusion cell is provided which extends process proceeding time, realizes radiation plate and cooling functions of the cooling part at the same time, and which is easily used as a low temperature effusion cell by preventing a source material from condensing on the entrance of crucible. CONSTITUTION: The structure of effusion cell for preventing source material from condensing on the entrance of crucible is characterized in that resistance wires as heating element(10) are formed in such a way that the resistance wires are vertically arranged so that eight resistance wires are connected to each heat element connecting electrode(5), uniformed heating is maintained by constantly adjusting length of each resistance wire, a ceramic material is used to insulate the upper part of each heating element, heat generated to the maximum at the upper part of the heating element is used to heat the crucible and prevent cooling of the entrance of the crucible by exposing the upper part of the heating element, heat loss at the entrance of the crucible is minimized by positioning a part of crucible supporting structure under the upper part of the heating element to increase heat transfer efficiency that heat generated from the heating element is transferred to the crucible, heat efficiency is improved by exposing the upper part of the heating element, condensing of the source material is prevented at the entrance of the crucible by forming the entrance of the crucible in heat source, and heat accumulation due to heating is prevented by mounting the heating part and crucible inside a cooling jacket through which cooling water flows.

Description

도가니 입구에서의 소오스 응축 방지형 진공 증발원{The structure of effusion cell free from condensing of source materials on the entrance}Source condensation prevention vacuum evaporation source at the crucible entrance {The structure of effusion cell free from condensing of source materials on the entrance}

진공 증발원(Effusion Cell)은 분자선 증착기(Molecular Beam Epitaxy) 또는 유기물 분자선 증착기(Organic Molecular Beam Deposition)에 없어서는 안될 필수적인 부품이다. 이 장치들은 불순물 유입을 배제하는 광소자나 유기 EL 디스플레이 모듈제작 시에 제작장비의 부품으로서 필수적으로 사용된다. 일반적인 진공 증발원(Effusion Cell)은 도가니 주위를 가열하여 소오스를 증기화시키는 장치로서 저항가열식 증발원과는 달리 증기화된 소오스가 분자선 형태로 증발되며 불순물 유입을 최소화할 수 있다. 또한 발열원의 온도를 제어하여 증착 두께를 정밀하게 조절할 수 있으며 두께 균일도도 우수하다. 기존에 제작되어 사용되고 있는 도가니형 증발원(Effusion Cell)의 경우 도가니 입구가 발열체 상단을 벗어나 위치하고 있어 발열체 상단의 발열이 크더라도 외부에 노출된 부분이 많아 열 손실이 많게 된다. 이는 소오스가 용해되거나 증발할 때 도가니 입구에서 응축되어 연속적인 공정을 방해하는 요인이 되고 있다. 이를 해결하기 위해 기존에 사용되고 있는 장치의 경우 도가니 입구 주위를 추가로 가열하는 이중 발열체 구조를 사용하고 있으나 이 방법은 장치 제작비용을 상승시키는 요인이 되고 있다.Effusion Cell is an indispensable part of Molecular Beam Epitaxy or Organic Molecular Beam Deposition. These devices are essentially used as part of manufacturing equipment in the fabrication of optical devices or organic EL display modules that exclude impurities. A typical vacuum evaporation source (Effusion Cell) is a device that vaporizes a source by heating around a crucible. Unlike a resistance heating evaporation source, a vaporized source is evaporated in the form of a molecular beam, and impurities can be minimized. In addition, it is possible to precisely control the deposition thickness by controlling the temperature of the heating source and excellent thickness uniformity. The existing crucible type evaporation source (Effusion Cell) is located outside the top of the heating element, so even if the heat of the upper part of the heating element is large, many parts are exposed to the outside, resulting in high heat loss. This causes condensation at the inlet of the crucible as the source dissolves or evaporates, disrupting the continuous process. In order to solve this problem, the existing apparatus uses a double heating element structure that additionally heats around the crucible inlet, but this method increases the manufacturing cost of the apparatus.

본 장치는 종래 사용되고 있는 도가니(Crucible)형 증발원(Effusion Cell)의 입구에서 소오스가 응축되는 문제를 해결하고자 발명한 것으로서, 도가니 입구 주위의 열원 손실을 최소화하기 위해 발열체 상단을 노출시키고, 발열체가 도가니 주위에 일정한 위치에 유지될 수 있도록 독립적인 발열체를 연결전극을 이용하여 고정하였으며, 도가니가 열원 속으로 들어갈 수 있도록 도가니 받침 구조물을 이용하였다. 이렇게 함으로써 발열 효율을 증가시킬 수 있으며, 도가니 입구가 상대적으로 냉각되는 것을 방지함으로써 소오스가 도가니 입구에 응축되는 것을 막을 수 있다. 도가니 입구에서 소오스가 응축되는 것을 방지함으로써 공정 진행 시간을 늘일 수 있으며 균일한 공정 조건을 유지할 수 있다.This device was invented to solve the problem of source condensation at the inlet of Crucible-type Effusion Cell, which is used in the prior art, and the top of the heating element is exposed to minimize the heat source loss around the inlet of the crucible. An independent heating element was fixed by using a connecting electrode to be maintained at a constant position around the crucible support structure so that the crucible could enter the heat source. This can increase the exothermic efficiency and prevent the source from condensing at the crucible inlet by preventing the crucible inlet from being relatively cooled. By preventing the source from condensing at the inlet of the crucible, the process run time can be extended and uniform process conditions can be maintained.

제1도는 본 「도가니 입구에서의 소오스 응축 방지기능을 가지는 도가니(Crucible)형 증발원(Effusion Cell)」의 발열체 및 열선 전극의 평면도 및 입체도.1 is a plan view and a three-dimensional view of a heating element and a hot wire electrode of the Crucible-type Effusion Cell having a source condensation preventing function at the inlet of the crucible.

제2도는 본 「도가니 입구에서의 소오스 응축 방지기능을 가지는 도가니(Crucible)형 증발원(Effusion Cell)」의 발열체의 상단 지지판의 평면도.2 is a plan view of the upper support plate of the heating element of the present Crucible-type Effusion Cell having a source condensation preventing function at the inlet of the crucible.

제3도는 본 「도가니 입구에서의 소오스 응축 방지기능을 가지는 도가니(Crucible)형 증발원(Effusion Cell)」의 도가니 받침 구조물 입체도 및 평면도.3 is a perspective view and a plan view of the crucible support structure of the Crucible-type Effusion Cell having a source condensation preventing function at the inlet of the crucible.

제4도는 본 「도가니 입구에서의 소오스 응축 방지기능을 가지는 도가니(Crucible)형 증발원(Effusion Cell)」의 냉각재킷의 평면도.4 is a plan view of the cooling jacket of the Crucible-type Effusion Cell having a source condensation preventing function at the inlet of the crucible.

* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

1. 셔터 구동체2. 진공용 플랜지 3. 셔터 축Shutter drive body 2. Vacuum Flange 3. Shutter Shaft

4. 냉각재킷 5. 발열체 연결전극 6. 외부도가니4. Cooling jacket 5. Heating element connection 6. External crucible

7. 내부도가니8. 셔터 9. 도가니 받침 구조물7. Internal crucible 8. Shutter 9. Crucible Support Structure

10. 발열체 상단 지지판11. 발열체 12. 온도 센서10. Heating element upper support plate 11. Heating element 12. Temperature sensor

13. 전원 연결선 14. 냉각수 유입구 및 지지기둥 15. 외부 전원 연결용 단자13. Power connection line 14. Coolant inlet and support column 15. Terminal for external power connection

상기 목적을 달성하기 위한 본 발명 도가니 입구에서의 소오스 응축 방지기능을 가지는 도가니형 증발원(Effusion Cell)은 대표도와 같이 도가니 주위를 가열하는 발열부(5, 10), 도가니를 고정시키는 지지부(9), 도가니(6, 7), 온도센서(11), 전원 연결선(13), 냉각수 유입구 및 지지축(13), 과도한 가열에 따라 축적되는 열을 배출하기 위한 냉각재킷(4) 등으로 구성되어있으며 진공용 플랜지(2)에 장착되어있다. 발열체(10)로는 저항선을 도 1와 같이 수직방향으로 배열되도록 성형하여 여덟 개의 저항선을 각각의 발열체 연결 전극(5)으로 연결되도록 하였다. 이 구조는 수직방향으로 도가니가 위치하는 곳에서는 일정한 발열을 하고,최상부의 소오스 분자선 방출구에서는 발열량이 조금 더 많게 설계되어 있어, 도가니 입구에서 소오스가 응축되지 않게 된다. 각 저항선의 길이를 일정하게 조절하여 균일한 발열을 유지할 수 있다. 각 발열체의 상부에서의 절연을 위해 도 2와 같은 구조의 세라믹을 사용하여 절연하였다. 이 구조는 발열체 상부를 노출시킴으로써 응력이 집중되어있는 발열체 상부에서 최대로 발생하는 열을 도가니 가열에 이용하고 도가니 입구의 냉각을 방지할 수 있다. 발열체에서 발생하는 열이 도가니에 전달되는 효율을 증가시키기 위해 도가니 받침 구조물의 일부가 발열체 상단 아래쪽으로 들어가도록 하여 도가니 입구가 상대적으로 온도가 낮은 외부에 노출되는 것을 줄여 도가니 입구에서의 열 손실을 최소화하였다. 발열체 상부를 노출시켜 열 효율을 좋게 하고, 도가니 입구를 열원 속으로 들어가도록 함으로써 도가니 입구에서의 소오스의 응축을 방지할 수 있다. 또한 발열부 및 도가니를 냉각수가 흐를 수 있는 도 4와 같은 냉각재킷 내부에 장착함으로써 발열에 의한 열의 누적을 방지한다. 이 구조는 기존에 사용되는 구조에서 방열판 기능과 냉각기능을 동시에 가짐으로써 구조가 단순해지며, 냉각 기능이 없는 진공장치에서도 사용이 가능하다. 이 냉각 재킷은 진공용 플랜지 옆면으로 냉각수가 들어가서 냉각재킷 외관과 내관을 채운 뒤 상단까지 들어가 있는 냉각수 배출관으로 나오게 함으로써 물이 순환되도록 하였다. 냉각수가 흐르는 튜브를 지지기둥으로 이용하였다.Crucible-type evaporation source (Effusion Cell) having a source condensation prevention function at the inlet of the present invention crucible for achieving the above object is a heating unit (5, 10) for heating around the crucible as shown in the representative, the support portion (9) , Crucible (6, 7), temperature sensor (11), power supply line (13), cooling water inlet and support shaft (13), cooling jacket (4) for discharging heat accumulated by excessive heating, etc. It is mounted on the vacuum flange (2). As the heating element 10, the resistance wires were molded to be arranged in the vertical direction as shown in FIG. 1 to connect eight resistance wires to each of the heating element connecting electrodes 5. This structure generates constant heat in the crucible in the vertical direction, and generates a little more heat in the source molecular beam outlet at the top, so that the source does not condense at the inlet of the crucible. By uniformly adjusting the length of each resistance wire can maintain a uniform heat generation. Insulation was performed using a ceramic structure as shown in FIG. 2 to insulate the upper portion of each heating element. By exposing the upper part of the heating element, this structure utilizes the maximum heat generated in the upper part of the heating element where the stress is concentrated to heat the crucible and prevents the cooling of the crucible inlet. Minimize heat loss at the crucible inlet by reducing the exposure of the crucible inlet to a relatively low outside temperature by allowing a portion of the crucible support structure to enter the top of the top of the heating element to increase the efficiency of heat transfer from the heating element to the crucible. It was. By exposing the upper part of the heating element to improve thermal efficiency, and allowing the inlet of the crucible to enter the heat source, condensation of the source at the inlet of the crucible can be prevented. In addition, the heat generating unit and the crucible may be mounted inside the cooling jacket as shown in FIG. 4 through which the cooling water may flow to prevent accumulation of heat due to heat generation. This structure simplifies the structure by having both a heat sink function and a cooling function in the existing structure, and can be used in a vacuum device without a cooling function. The cooling jacket allowed the water to circulate by allowing the coolant to enter the sides of the vacuum flanges, filling the cooling jacket's exterior and inner tube, and exiting the coolant outlet line up to the top. A tube through which coolant flowed was used as a support pillar.

상기 발명에 의해 도가니(Crucible)형 진공 증발원(Effusion Cell)에서 도가니 입구에서의 소오스가 응축되는 것이 방지되어 공정 진행 시간을 늘일 수 있고, 냉각부분에서 방열판 기능과 냉각기능을 동시에 실현하여 단순화되었으며, 같은 이유로 저온 진공 증발원용으로도 사용하기 쉽게 되었다.The present invention prevents condensation of the source at the inlet of the crucible-type vacuum evaporation source (Effusion Cell), thereby increasing the process progress time, and simplifying by simultaneously realizing the heat sink function and the cooling function in the cooling portion. For the same reason, it has become easier to use as a low temperature vacuum evaporation source.

Claims (3)

도 1과 같이 소오스가 응축되는 것을 방지할 수 있는 도가니(Crucible)형 증발원(Effusion Cell)에 사용된 발열체 구조와 연결전극 구조 및 수직 배열된 발열체를 절연시키기 위해 도 2와 같은 모양의 절연체를 사용하여 발열체 상부를 노출시킨 구조.As shown in FIG. 1, an insulator having the shape shown in FIG. 2 is used to insulate the heating element structure, the connecting electrode structure, and the vertically arranged heating element used in a crucible type evaporation cell that can prevent the source from condensing. To expose the top of the heating element. 도 3과 같이 도가니(Crucible)형 증발원(Effusion Cell)에 사용된 도가니 받침 구조물로서 도가니 받침 구조물의 일부가 발열체 상단 아래쪽으로 들어가도록 하여 도가니 입구를 열원 속으로 들어가도록 하게 한 구조.As a crucible support structure used in a crucible type evaporation source (Effusion Cell) as shown in FIG. 3, a portion of the crucible support structure enters a lower portion of the heating element so that the crucible inlet enters the heat source. 도 4와 같이 진공용 플랜지 옆면으로 냉매가 들어가서 냉각재킷 외관과 내관을 채운 뒤 상단까지 올라갔다가 배출관을 통하여 냉매가 나오게 되는 순환 냉각구조 겸 동시에 방열판 기능도 가지는 구조.4, the refrigerant enters the side surface of the vacuum flange as shown in FIG.
KR1020010072567A 2001-11-21 2001-11-21 The structure of effusion cell free from condensing of source materials on the entrance KR20030041646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020010072567A KR20030041646A (en) 2001-11-21 2001-11-21 The structure of effusion cell free from condensing of source materials on the entrance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020010072567A KR20030041646A (en) 2001-11-21 2001-11-21 The structure of effusion cell free from condensing of source materials on the entrance

Publications (1)

Publication Number Publication Date
KR20030041646A true KR20030041646A (en) 2003-05-27

Family

ID=29570554

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010072567A KR20030041646A (en) 2001-11-21 2001-11-21 The structure of effusion cell free from condensing of source materials on the entrance

Country Status (1)

Country Link
KR (1) KR20030041646A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100805531B1 (en) * 2006-06-13 2008-02-20 삼성에스디아이 주식회사 Evaporation source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01257188A (en) * 1988-04-04 1989-10-13 Mitsubishi Electric Corp Cell for molecular beam epitaxy
JPH0465392A (en) * 1990-07-05 1992-03-02 Mitsubishi Electric Corp Molecular beam epitaxial crystal growing device
JPH08236447A (en) * 1995-02-27 1996-09-13 Hitachi Ltd Molecular beam epitaxial device and manufacture of compound semiconductor thin film and compound semiconductor device using the epitaxial device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01257188A (en) * 1988-04-04 1989-10-13 Mitsubishi Electric Corp Cell for molecular beam epitaxy
JPH0465392A (en) * 1990-07-05 1992-03-02 Mitsubishi Electric Corp Molecular beam epitaxial crystal growing device
JPH08236447A (en) * 1995-02-27 1996-09-13 Hitachi Ltd Molecular beam epitaxial device and manufacture of compound semiconductor thin film and compound semiconductor device using the epitaxial device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100805531B1 (en) * 2006-06-13 2008-02-20 삼성에스디아이 주식회사 Evaporation source
US8574367B2 (en) 2006-06-13 2013-11-05 Samsung Display Co., Ltd. Evaporation source

Similar Documents

Publication Publication Date Title
KR100645689B1 (en) Linear type deposition source
US8268074B2 (en) Method and device for producing oriented solidified blocks made of semi-conductor material
KR20040110718A (en) Linear type nozzle evaporation source for manufacturing a film of OLEDs
KR101084333B1 (en) Deposition source for manufacturing organic electroluminescence display panel and deposition apparatus having the same
KR20020068039A (en) Method and apparatus for coating a substrate in a vacuum
KR20180037277A (en) A method of operating a deposition apparatus, a method of depositing a vaporized source material on a substrate,
RU2184092C2 (en) Cooler for optical fiber drawing column (versions)
KR101196564B1 (en) Heat equalizer
KR20030041646A (en) The structure of effusion cell free from condensing of source materials on the entrance
KR101265067B1 (en) Linear effusion cell with side orifice array, the method of manufacturing linear effusion cell with side orifice array and evaporator
CN111748773A (en) Evaporation source and evaporation device
CN110983258A (en) Ceramic point source for evaporation equipment
KR20010110737A (en) Integrated heating and cooling device in a reactor for thermal treatment of a substrate
KR20030038268A (en) Crucible-type effusion cell for organic molecular beam deposition
KR102509630B1 (en) High frequency induction heating device
KR101266584B1 (en) Evaporation source for Large scale deposition using parallel connection of point source
KR20050087032A (en) Apparatus of manufacturing of silicone ingot for solar cell using square type assembly heater
KR101225318B1 (en) Hybrid Heating Type Evaporator
KR20150011788A (en) Effusion Cell for Antipollution of Inner Part
KR20150011520A (en) Effusion Cell for Antipollution of Inner Part
KR102489766B1 (en) Direct active cooling structure and laser source including the same
CN214400692U (en) Thermal evaporation crucible and thermal evaporation device
US20180245207A1 (en) Homogeneous linear evaporation source
KR102505422B1 (en) Vertical type evaporation device by induction heating
JP4171365B2 (en) Vapor deposition equipment

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application