KR20030041560A - Vacuum forming equipment for semiconductor manufacturing equipment - Google Patents

Vacuum forming equipment for semiconductor manufacturing equipment Download PDF

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Publication number
KR20030041560A
KR20030041560A KR1020010072393A KR20010072393A KR20030041560A KR 20030041560 A KR20030041560 A KR 20030041560A KR 1020010072393 A KR1020010072393 A KR 1020010072393A KR 20010072393 A KR20010072393 A KR 20010072393A KR 20030041560 A KR20030041560 A KR 20030041560A
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South Korea
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turbo pump
vacuum
line
pump
equipment
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KR1020010072393A
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Korean (ko)
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고광현
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삼성전자주식회사
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Priority to KR1020010072393A priority Critical patent/KR20030041560A/en
Publication of KR20030041560A publication Critical patent/KR20030041560A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D25/00—Pumping installations or systems
    • F04D25/02—Units comprising pumps and their driving means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
  • Non-Positive Displacement Air Blowers (AREA)

Abstract

PURPOSE: A vacuum forming equipment for semiconductor fabrication equipment is provided to prevent a damage of an impeller of a turbo pump by forming a structure for venting the inside of the turbo pump. CONSTITUTION: A turbo pump(3') and a dry pump(5') are installed on a vacuum line(7'). The first and the second throttle valves(9a',9b') are installed on the vacuum line in order to control the internal pressure of a process chamber(1'). The first to the third isolation valves(11a',11b',11c') are used for opening or shutting the vacuum line in order to isolate the process chamber from the turbo pump and the dry pump. An exhaust line(13') and an exhaust valve(15') are installed at one side of the process chamber. A purge line(17') is connected with the turbo pump. A purge valve is installed at the purge line in order to supply nitrogen to the turbo pump. A turbo pump vent portion(20') is formed with a vent line(21') and a vent valve(23').

Description

반도체 제조설비용 진공설비{VACUUM FORMING EQUIPMENT FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT}VACUUM FORMING EQUIPMENT FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT}

본 발명은 반도체 제조설비용 진공설비에 관한 것으로서, 더욱 상세하게는 터보펌프의 내부를 벤트시키도록 구현하여 상기 터보펌프 개방 시 유입되는 외부 공기의 충격에 의해 임펠러가 파손되는 것을 방지하는 반도체 제조설비용 진공설비에 관한 것이다.The present invention relates to a vacuum facility for a semiconductor manufacturing facility, and more particularly, to a semiconductor manufacturing facility which is implemented to vent the inside of a turbopump to prevent the impeller from being damaged by the impact of external air introduced when the turbopump is opened. It relates to a vacuum equipment for.

반도체 장치의 제조공정은 크게 물질막을 적층하는 공정, 적층된 물질막을 원하는 형태로 패터닝하기 위한 사진공정, 사진공정에서 형성되는 마스크를 이용하여 원하는 패턴을 형성하는 식각공정 및 식각 후의 세정공정으로 나눌 수 있다.The manufacturing process of a semiconductor device can be divided into a process of laminating material films, a photo process for patterning the stacked material films into a desired shape, an etching process of forming a desired pattern using a mask formed in the photo process, and a cleaning process after etching. have.

이러한 공정들은 소정의 진공분위기를 형성시켜 공정을 수행하는 것이 필수적이다.These processes are essential to form a predetermined vacuum atmosphere to carry out the process.

도 1은 종래의 반도체 제조설비용 진공설비의 구성을 개략적으로 도시한 도면으로서, 도면에 도시된 바와 같이 처리챔버(1)의 내부를 10-3토르(Torr)정도의 진공도를 형성할 수 있는 터보펌프(3) 및 상기 터보펌프(3)의 진공펌핑을 조력하여 처리챔버(1)의 내부를 10-6토르(Torr)정도의 진공도를 형성할 수 있는 드라이펌프(5)가 진공라인(7)에 설치된다.1 is a view schematically showing a configuration of a conventional vacuum equipment for semiconductor manufacturing equipment, as shown in the drawing can form a vacuum degree of about 10 -3 Torr in the interior of the processing chamber 1 The vacuum pump of the turbopump 3 and the turbopump 3 to form a vacuum degree of about 10 -6 Torr in the inside of the processing chamber 1 by assisting the vacuum pumping of the vacuum pump ( 7) is installed.

상기 진공라인(7)에는 그 개폐정도를 조절함으로써 상기 처리챔버(1)의 내부 압력을 소정의 압력으로 조절하는 제1,2트로틀밸브(9a,9b)와, 설비를 점검하거나 보수하는 등 필요에 의해 처리챔버(1)를 상기 터보펌프(3) 및 드라이펌프(5)로부터 격리시키도록 상기 진공라인(7)을 개폐시키는 제 1내지 제 3아이솔레이션밸브(11a,11b,11c)가 구성된다.The vacuum line 7 is required to check or repair the first and second throttle valves 9a and 9b for controlling the internal pressure of the processing chamber 1 to a predetermined pressure by adjusting the opening and closing degree thereof. The first to third isolation valves 11a, 11b and 11c are configured to open and close the vacuum line 7 so as to isolate the processing chamber 1 from the turbopump 3 and the dry pump 5. .

또한, 상기 처리챔버(1)의 일측에는 배기라인(13) 및 배기밸브(15)가 설치되어 설비정비 등을 위해 처리챔버(1)의 내부를 오픈시켜야 할 경우 처리챔버(1) 내부를 대기압 상태로 유지시키도록 한다.In addition, an exhaust line 13 and an exhaust valve 15 are installed at one side of the processing chamber 1, and when the inside of the processing chamber 1 needs to be opened for facility maintenance, the inside of the processing chamber 1 is atmospheric pressure. Keep it in the state.

또한, 상기 터보펌프(3)에는 퍼지라인(17)이 연결되고, 그 퍼지라인(17)에는퍼지밸브(19)가 설치되어 상기 터보펌프(3)로 질소(N2)를 공급함으로써 상기 터보펌프(3) 내부 부품을 보호하도록 구성된다.In addition, a purge line 17 is connected to the turbo pump 3, and a purge valve 19 is installed at the purge line 17 to supply nitrogen N 2 to the turbo pump 3. The pump 3 is configured to protect internal components.

그러나, 종래에는 터보펌프(3)를 분리하게 될 경우 진공상태를 유지하고 있던 터보펌프(3)내부로 대기압 상태의 외부공기가 순식간에 유입되면서 그 터보펌프(3)의 임펠러에 강한 충격을 가하게 되어 터보펌프(3)의 성능을 저하시킨다는 문제점이 있다.However, when the turbo pump (3) is separated, external air at atmospheric pressure flows into the turbo pump (3), which has been kept in a vacuum state, so that a strong impact is applied to the impeller of the turbo pump (3). There is a problem in that the performance of the turbopump 3 is lowered.

따라서, 본 발명은 상술한 문제점을 해결하기 위하여 안출 된 것으로서, 본 발명의 목적은 터보펌프의 내부를 밴트시키는 구조를 구현하여 터보펌프의 임펠러가 파손되는 것을 방지하도록 하는 반도체 제조설비용 진공설비를 제공하는 데 있다.Accordingly, the present invention has been made to solve the above-described problems, an object of the present invention is to implement a vacuum system for the semiconductor manufacturing equipment to implement the structure to bent the inside of the turbo pump to prevent damage to the impeller of the turbo pump To provide.

상술한 목적을 달성하기 위하여 본 발명은 소정의 공정과정을 진행하는 처리챔버와; 상기 처리챔버에 진공라인을 매개로 연결되어 펌핑동작에 의해 상기 처리챔버의 내부를 진공분위기로 만드는 터보펌프 및; 상기 터보펌프에 설치되어 상기 터보펌프 내부를 배기시키는 터보펌프밴트수단을 포함한다.In order to achieve the above object, the present invention provides a treatment chamber for performing a predetermined process; A turbo pump connected to the process chamber via a vacuum line to make the inside of the process chamber a vacuum atmosphere by a pumping operation; It is installed in the turbo pump includes a turbo pump vane means for exhausting the inside of the turbo pump.

상기 터보펌프밴트수단은 상기 터보펌프에 연결되는 밴트라인 및; 상기 밴트라인을 개폐하는 밴트밸브로 구성된다.The turbo pump band means includes a ban line connected to the turbo pump; It is composed of a vent valve for opening and closing the ban line.

도 1은 종래의 반도체 설비의 진공장치의 구성을 도시한 도면,1 is a view showing the configuration of a vacuum apparatus of a conventional semiconductor device;

도 2는 본 발명의 일 실시 예에 의한 진공장치의 구성을 도시한 도면이다.2 is a view showing the configuration of a vacuum apparatus according to an embodiment of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

1′ : 처리챔버3′ : 터보펌프1 ': Treatment chamber 3': Turbo pump

5′ : 드라이펌프7′ : 진공라인5 ′: Dry Pump 7 ′: Vacuum Line

9a′,9b′ : 트로틀밸브11a,11b,11c : 아이솔레이션밸브9a ', 9b': Throttle valves 11a, 11b, 11c: Isolation valves

20′ : 터보펌프밴트수단21′ : 밴트라인20 ': turbo pump and venting means 21': banrain

23′ : 밴트밸브23 ′: Vant valve

이하, 첨부된 도면 도 2를 참조로 하여 본 발명의 일 실시 예에 의한 구성및 작용에 대해서 상세히 설명한다.Hereinafter, with reference to the accompanying drawings, Figure 2 will be described in detail the configuration and operation according to an embodiment of the present invention.

도 2는 본 발명의 일실시 예에 의한 반도체제조설비용 진공설비의 구성을 도시한 도면이다.2 is a view showing the configuration of a vacuum facility for semiconductor manufacturing equipment according to an embodiment of the present invention.

상기 도면에 도시된 바와 같이 처리챔버(1′)의 내부를 10-3토르(Torr)정도의 진공도를 형성할 수 있는 터보펌프(3′) 및 상기 터보펌프(3′)의 진공펌핑을 조력하여 처리챔버(1′)의 내부를 10-6토르(Torr)정도의 진공도를 형성할 수 있는 드라이펌프(5′)가 진공라인(7′)에 설치된다.As shown in the figure, assists the vacuum pump of the turbo pump 3 'and the turbo pump 3', which can form a degree of vacuum of about 10 -3 Torr in the interior of the processing chamber 1 '. Thus, a dry pump 5 'capable of forming a vacuum degree of about 10 -6 Torr in the interior of the processing chamber 1' is provided in the vacuum line 7 '.

상기 진공라인(7′)에는 그 개폐정도를 조절함으로써 상기 처리챔버(1′)의 내부 압력을 소정의 압력으로 조절하는 제1,2트로틀밸브(9a′,9b′)와, 설비를 점검하거나 보수하는 등 필요에 의해 처리챔버(1′)를 상기 터보펌프(3′) 및 드라이펌프(5′)로부터 격리시키도록 상기 진공라인(7′)을 개폐시키는 제 1내지 제 3아이솔레이션밸브(11a′,11b′,11c′)가 구성된다.In the vacuum line 7 ', the first and second throttle valves 9a' and 9b 'which adjust the internal pressure of the processing chamber 1' to a predetermined pressure by adjusting the opening and closing degree thereof, First to third isolation valves 11a for opening and closing the vacuum line 7 'so as to isolate the processing chamber 1' from the turbo pump 3 'and the dry pump 5' as necessary. ', 11b', 11c ').

또한, 상기 처리챔버(1′)의 일측에는 배기라인(13′) 및 배기밸브(15′)가 설치되어 설비정비 등을 위해 처리챔버(1′)의 내부를 오픈시켜야 할 경우 처리챔버(1′) 내부를 대기압 상태로 유지시키도록 한다.In addition, an exhaust line 13 'and an exhaust valve 15' are installed at one side of the processing chamber 1 'so that the interior of the processing chamber 1' may be opened for facility maintenance. ′) Keep the inside at atmospheric pressure.

또한, 상기 터보펌프(3′)에는 퍼지라인(17′)이 연결되고, 그 퍼지라인(17′)에는 퍼지밸브(19′)가 설치되어 상기 터보펌프(3′)로 질소(N2)를 공급한다.In addition, a purge line 17 'is connected to the turbo pump 3', and a purge valve 19 'is installed at the purge line 17' to provide nitrogen (N 2 ) to the turbo pump 3 '. To supply.

또한, 상기 터보펌프(3′)에는 상기 터보펌프(3′)를 정비하거나 교체하기 위하여 터보펌프(3′)를 개방시켜야 할 경우 먼저, 밴트과정을 거친 후 개방하도록하여 진공분위기를 조성하고 있는 터보펌프(3′)의 내부로 외부 대기압이 순식간에 밀려들어가 상기 터보펌프(3′)의 내부에 설치된 임펠러에 강한 충격이 가해지는 것을 해소시키도록 밴트라인(21′) 및 밴트밸브(23′)로 구성되는 터보펌프밴트수단(20′)이 마련된다.In addition, when the turbo pump 3 'needs to be opened in order to maintain or replace the turbo pump 3', the turbo pump 3 'is first formed through a venting process to open a vacuum atmosphere. The vent line 21 'and the vane valve 23' are released so that an external atmospheric pressure is suddenly pushed into the turbo pump 3 'and a strong impact is applied to the impeller installed inside the turbo pump 3'. Is provided with a turbo pump band means 20 '.

이와 같이 구성되는 반도체 제조 설비용 진공설비는 설비 점검(예컨대, 터보펌프 점검)하는 등을 요구할 경우에는 처리챔버(1′) 내부를 오픈시켜 처리챔버(1′) 내부의 진공분위기를 해소하도록 상기 배기밸브(15′)를 오픈시켜 배기라인(13′)을 통해 벤트동작을 실시하게 된다.When the vacuum equipment for semiconductor manufacturing equipment configured as described above is required to check equipment (for example, turbo pump inspection), the vacuum chamber inside the processing chamber 1 'is released to open the processing chamber 1'. The exhaust valve 15 'is opened to perform a vent operation through the exhaust line 13'.

그 터보펌프(3′) 점검에 관련된 벤트 작업 순서를 보다 상세히 설명하면, 먼저, 제1 내지 제3아이솔레이션밸브(11a,11b,11c)를 오프하여 진공라인(7′)을 차단한 후 터보펌프(3′)의 동작을 정지시킨다.Referring to the vent operation procedure related to the turbo pump 3 'inspection in more detail, first, the first to third isolation valves 11a, 11b, and 11c are turned off to shut off the vacuum line 7', and then the turbo pump The operation of 3 'is stopped.

그후 배기밸브(15′)를 오픈하여 처리챔버(1′)내부를 표준대기압 상태로 만든 후 드라이펌프(5′)의 동작을 정지시키고, 배기밸브(23′)를 오픈하여 배기라인(21′)을 통해 터보펌프(3′) 내부를 표준 대기압 상태로 만든다.Thereafter, the exhaust valve 15 'is opened to make the interior of the processing chamber 1' into the standard atmospheric pressure, and the operation of the dry pump 5 'is stopped, and the exhaust valve 23' is opened to open the exhaust line 21 '. ) To bring the inside of the turbopump 3 'to standard atmospheric pressure.

그와 같이 터보펌프(3′) 내부를 표준 대기압 상태의 분위기로 만든 후에 터보펌프(3′)를 제거하는 동작을 행하게 된다.Thus, after making the inside of the turbo pump 3 'into the atmosphere of a standard atmospheric pressure, the operation | movement which removes the turbo pump 3' is performed.

진공상태의 터보펌프(3′) 내부로 표준 대기압 상태의 외부공기가 신속하게 유입되어 터보펌프(3′)의 내부에 설치된 임펠러에 충격을 가하게 되어 상기 임펠러가 파손되는 것을 해소시킬 수 있게 되는 것이다.The outside air of the standard atmospheric pressure is rapidly introduced into the turbopump 3 'in a vacuum state, and the impeller installed inside the turbopump 3' is shocked to prevent damage to the impeller. .

상술한 바와 같이 구성함에 따라 진공상태를 형성하고 있던 터보펌프 내부로 표준 대기압 상태의 외부공기가 신속하게 유입되어 터보펌프의 내부에 설치된 임펠러에 충격을 가하게 되어 상기 임펠러가 파손되는 것을 해소시킬 수 있다.As described above, external air in a standard atmospheric pressure is rapidly introduced into the turbopump which has been in a vacuum state, and the impeller installed in the turbopump is shocked, thereby preventing damage to the impeller. .

이와 같이 본 발명의 상세한 설명에서는 구체적인 실시 예에 관해 설명하였으나, 본 발명의 범주에서 벗어나지 않는 한도 내에서 여러 가지 변형이 가능함은 물론이다. 그러므로, 본 발명의 범위는 설명된 실시 예에 국한되어 정해져서는 안되며 후술하는 특허청구범위 뿐만 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.As described above, in the detailed description of the present invention, specific embodiments have been described. However, various modifications may be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims below and equivalents thereof.

Claims (2)

소정의 공정과정을 진행하는 처리챔버;A processing chamber for performing a predetermined process; 상기 처리챔버에 진공라인을 매개로 연결되어 펌핑동작에 의해 상기 처리챔버의 내부를 진공분위기로 만드는 터보펌프 및;A turbo pump connected to the process chamber via a vacuum line to make the inside of the process chamber a vacuum atmosphere by a pumping operation; 상기 터보펌프에 설치되어 상기 터보펌프 내부를 밴트시키는 터보펌프밴트수단을 포함하는 것을 특징으로 하는 반도체제조설비용 진공설비.And a turbo pump band means installed in the turbo pump to bent the inside of the turbo pump. 제 1항에 있어서,The method of claim 1, 상기 터보펌프밴트수단은 상기 터보펌프에 연결되는 밴트라인 및;The turbo pump band means includes a ban line connected to the turbo pump; 상기 밴트라인을 개폐하는 밴트밸브로 구성된 것을 특징으로 하는 반도체 제조설비용 진공설비.Vacuum equipment for semiconductor manufacturing equipment, characterized in that consisting of a vent valve for opening and closing the banrain.
KR1020010072393A 2001-11-20 2001-11-20 Vacuum forming equipment for semiconductor manufacturing equipment KR20030041560A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100833648B1 (en) * 2007-05-25 2008-05-30 한국표준과학연구원 Ultra-high vacuum exhausting system with vacuum reservoir

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100833648B1 (en) * 2007-05-25 2008-05-30 한국표준과학연구원 Ultra-high vacuum exhausting system with vacuum reservoir

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