KR20030035218A - array panel for liquid crystal display devices and manufacturing method of the same - Google Patents

Abstract

PURPOSE: An array substrate for a liquid crystal display device and a method for manufacturing the same are provided to manufacture the array substrate with four pieces of masks while preventing a device from being impaired by static electricity by forming shorting bars, thereby reducing the manufacturing process and the cost. CONSTITUTION: A conductive material is deposited on an insulating substrate(310) and is patterned by using a first mask to form a first data shorting bar. A gate insulating layer(330) is formed by depositing a silicon nitride layer. An amorphous silicon layer, a silicon layer dopped with impurities, a metal layer are deposited on the gate insulating layer in order, and a photosensitive layer is applied. The photosensitive layer is exposed by using a second mask to form photosensitive patterns. The lower layers are etched to form a third data shorting bar, data lines, data pads, second shorting bar patterns(366), impurity semiconductor layers, a second shorting bar, semiconductor patterns, first shorting bar patterns(346). A passivation layer(370) is formed and is patterned by a third mask to form first and third contact holes. The passivation layer and the second shorting bar patterns are patterned to form cut parts(372). An indium-tin-oxide is deposited and is patterned by a fourth mask to form first and second auxiliary patterns.

Description

Array substrate for liquid crystal display device and manufacturing method therefor {array panel for liquid crystal display devices and manufacturing method of the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a manufacturing method thereof, and more particularly, to an array substrate for a liquid crystal display device having a short circuit and a manufacturing method thereof.

Recently, with the rapid development of the information society, there is a need for a flat panel display having excellent characteristics such as thinning, light weight, and low power consumption, among which a liquid crystal display has a resolution, It is excellent in color display and image quality, and is actively applied to notebooks and desktop monitors.

In general, a liquid crystal display device is formed by arranging two substrates on which electric field generating electrodes are formed so that the surfaces on which the two electrodes are formed face each other, injecting a liquid crystal material between the two substrates, and then applying a voltage to the two electrodes. By moving the liquid crystal molecules by the electric field is a device that represents the image by the transmittance of light that changes accordingly.

Liquid crystal displays may be formed in various forms. Currently, an active matrix LCD (AM-LCD) having a thin film transistor and pixel electrodes connected to the thin film transistors arranged in a matrix manner has excellent resolution and video performance. It is most noticed.

The liquid crystal display device has a structure in which a pixel electrode is formed on a lower substrate and a common electrode is formed on an upper substrate, and the liquid crystal molecules are driven by an electric field in a direction perpendicular to the substrate between the two electrodes. This is excellent in characteristics such as transmittance and aperture ratio.

Hereinafter, a structure of a general liquid crystal display device will be described with reference to the accompanying drawings.

1 is a cross-sectional view of a general liquid crystal display.

As shown in FIG. 1, the liquid crystal display includes a first area A in which an image is represented and a pad (not shown) connected to a driving circuit for applying a signal to the first area A is located. It is divided into two areas (B).

In the lower region of the first region A, a gate electrode 11 made of a conductive material such as a metal is formed on the transparent first substrate 10, and a silicon nitride film SiN _x or a silicon oxide film SiO is formed thereon. _The gate insulating film 12 made of ₂ ) covers the gate electrode 11. An active layer 13 made of amorphous silicon is formed on the gate insulating layer 12 on the gate electrode 11, and an ohmic contact layer 14 made of amorphous silicon doped with impurities is formed thereon.

Source and drain electrodes 15a and 15b formed of a conductive material such as a metal are formed on the ohmic contact layer 14, and the source and drain electrodes 15a and 15b are formed together with the gate electrode 11. ).

Although not shown, the gate electrode 11 is connected to the gate wiring, the source electrode 15a is connected to the data wiring, and the gate wiring and the data wiring are orthogonal to each other to define the pixel region.

Next, a protective layer 16 made of a silicon nitride film, a silicon oxide film, or an organic insulating film is formed on the source and drain electrodes 15a and 15b, and the protective layer 16 is a contact hole 16c exposing the drain electrode 15b. Has

A pixel electrode 17 made of a transparent conductive material is formed in the pixel area above the passivation layer 16, and the pixel electrode 17 is connected to the drain electrode 15b through the contact hole 16c.

Next, the second substrate 20 is spaced apart from the first substrate 10 at regular intervals and disposed on the first substrate 10, and the black matrix 21 is disposed on the inner surface of the second substrate 20. ) Is formed at a position corresponding to the thin film transistor T, although not shown, the black matrix 21 covers portions other than the pixel electrode 17. The color filter 22 is formed under the black matrix 21. The color filter 22 sequentially repeats red, green, and blue colors, and one color corresponds to one pixel area. The common electrode 23 made of a transparent conductive material is formed under the color filter 22.

The liquid crystal 30 is injected between the two substrates 10 and 20.

Here, the common insulating film 23 of the gate insulating film 12, the protective layer 16, and the second substrate 20 on the first substrate 10 extends to the second region B, and the second region B A seal pattern 40 is formed between the first substrate 10 and the second substrate 20 of FIG. 7 to form a gap for injecting the liquid crystal and prevent leakage of the injected liquid crystal.

In such a liquid crystal display device, the lower array substrate is formed by repeating a process of forming a thin film and photo-etching a plurality of times. In general, since the substrate of the liquid crystal display device uses a transparent glass substrate, static electricity is generated during the process, so that the substrate and the substrate It is present locally in the upper pattern. Since the static electricity is very small but locally present, the voltage is very high, which causes a problem of damaging a device such as a thin film transistor.

Therefore, by forming a shorting bar connected to the respective pads in the second region B so that the wires are equipotential, it is possible to prevent the destruction of the device.

2 to 4 show examples of the conventional short-circuit wiring, where FIG. 2 is a plan view of a conventional data short-circuit wiring portion, and FIGS. 3 and 4 are lines III-III and IV-IV in FIG. 2, respectively. The cross section is cut along the side.

As shown, the first short wirings 51 and 52 are formed on the substrate 50 with the same material as that of the gate electrode (11 in FIG. 1), and the first short wirings 51 and 52 extend in the horizontal direction. The first portion 51 and the second portion 52 extending in the longitudinal direction and one end connected to the first portion 51. A gate insulating film 53 is formed on the first short wirings 51 and 52, and a second short circuit formed of amorphous silicon and extending in the horizontal direction spaced apart from the first portion 51 of the first short wiring. The wiring 54, the short circuit pattern 55, and the pad pattern 56 are formed.

Next, the third short circuit wire 58 extending in the horizontal direction and overlapping the second short circuit wire 54 and the data wires 59a and 59b extending in the vertical direction are formed. At one end of 59b), data pads 60a and 60b are located. Here, the other end of the odd-numbered data line 59a is connected to the third short-circuit line 58. The short circuit pattern 55 is formed between the odd data line 59a and the even data line 59b.

Meanwhile, a first impurity layer 57a made of amorphous silicon doped with impurities is formed between the second short wiring 54 and the third short wiring 58, and the short pattern 55 and the data wiring 59a, The second impurity layer 57b is formed between the portions where 59b) overlaps, and the third impurity layer 57c is formed between the pad pattern 56 and the data pads 60a and 60b.

Next, a protective layer 61 is formed on the third short circuit wiring 58, the data wirings 59a and 59b, and the data pads 60a and 60b, and the protective layer 61 is the second portion of the first short circuit wiring. (52) It has a plurality of first contact holes 61a exposing the other end and second contact holes 61c exposing the data pads 60a, 60b. In addition, the protective layer 61 has a cutting portion 61b for cutting the short circuit pattern 55, and at this time, a portion of the lower gate insulating layer 53 is also removed.

The first auxiliary pattern 62 made of the same material as the pixel electrode 17 of FIG. 1 and extending in the horizontal direction and overlapping the first short circuit line 51 on the protective layer 61, and extending in the vertical direction. Second auxiliary patterns 63a and 63b overlapping the data wires 59a and 59b and the data pads 60a and 60b are formed and connected to the data pads 60a and 60b through the second contact holes 61c. . Here, the even-numbered second auxiliary pattern 63b partially overlaps with the other end of the second portion 52 of the first short-circuit wiring and is connected through the first contact hole 61a.

In this way, the first to third short circuit lines 51, 52, 54, and 58 are formed, and the data lines 59a and 59b are connected through the short circuit pattern 55 to perform a process, and then electrical inspection is performed. The short circuit pattern 55 is cut so that the data lines 59a and 59b are divided into odd and even numbers. Therefore, it is possible to detect a failure of the array substrate while preventing static electricity generated during the process.

These short-circuit wirings 51, 52, 54, and 58 are cut after performing electrical inspection.

However, as mentioned above, the array substrate of the liquid crystal display device is formed by repeating the process of forming a thin film and photolithography. Since the photolithography process involves various processes such as cleaning, photoresist coating, exposure and development, and etching, shortening the photolithography process once significantly reduces manufacturing time and reduces manufacturing costs. In general, the number of masks used in the photolithography process represents the number of processes, and a method of manufacturing an array substrate using four masks has recently been researched and developed.

Thus, the data short-circuit wiring part at the time of manufacturing an array board | substrate using four masks is shown in FIGS. 5 is a plan view of a data short-circuit wiring part, and FIGS. 6 and 7 are cross-sectional views taken along the VI-VI line and the VIII-VIII line in FIG. 5. In this case, since the active layer and the source and drain electrodes of the thin film transistor are formed in one photolithography process, the active layer has the same shape as the source and drain electrodes except between the source and drain electrodes.

As illustrated, the first short-circuit wiring 71 formed of the same material as the gate electrode 11 of FIG. 1 and formed of the first portion 71 in the horizontal direction and the second portion 72 in the vertical direction is formed on the substrate 70. 72) is formed. A gate insulating film 73 is formed on the first short wirings 71 and 72, and a second short circuit formed of amorphous silicon and spaced apart from the first portion 71 of the first short wiring is extended in the horizontal direction. The semiconductor patterns 76c and 78c extending in the longitudinal direction, and the first short circuit pattern 79c connecting the semiconductor pattern 76c are formed.

Next, the third short wiring 74a extending in the horizontal direction and overlapping the second short wiring 74c and the data wirings 75a and 76a extending in the vertical direction are formed, and the data wirings 75a, Data pads 77a and 78a are positioned at one end of 76a). Here, the other end of the odd-numbered data line 75a is connected to the third short-circuit line 74a, and the even-numbered data line 76a corresponds to the second portion 72 of the first short-circuit line. A second short circuit pattern 79a is formed between the data line 75a and the even-numbered data line 76a.

On the other hand, an impurity made of amorphous silicon doped with impurities having the same shape and doped under the third short circuit line 74a, the data lines 75a and 76a, the data pads 77a and 78a, and the second short circuit pattern 79a. The semiconductor layers 74b, 76b, and 78b are formed, and the third short circuit wire 74a, the data wires 75a and 76a, the data pads 77a and 78a, and the second short circuit pattern 79a are impurity semiconductor layers ( The second short wiring 74c, the semiconductor patterns 76c and 78c, and the first short circuit pattern 79c under the 74b, 76b, and 78b have the same shape.

Next, a protective layer 81 is formed on the third short circuit wiring 74a, the data wirings 75a and 76a, the data pads 77a and 78a, and the second short circuit pattern 79a, and the protective layer 81 Has a plurality of first contact holes 81a exposing the other end of the second portion 72 of the first short-circuit wiring and second contact holes 81c exposing the data pads 77a and 78a. In addition, the protective layer 81 has cut portions 81b for cutting the short circuit patterns 79a and 79c, and at this time, a portion of the lower gate insulating film 73 is also removed.

Subsequently, the first auxiliary pattern 82 made of the same material as the pixel electrode 17 of FIG. 1 and extending in the horizontal direction and overlapping the first short circuit line 71 is disposed on the passivation layer 81, and in the vertical direction. Second auxiliary patterns 83a and 83b that extend and overlap the data lines 75a and 76a and the data pads 77a and 78a are formed to be connected to the data pads 77a and 78a through the second contact holes 81c. It is. Here, the even-numbered second auxiliary pattern 83b partially overlaps with the other end of the second portion 72 of the first short-circuit wiring and is connected through the first contact hole 81a.

As described above, when the array substrate is manufactured using four masks, the patterns made of amorphous silicon have the same shape as the data wiring and the pattern made of the same material. Therefore, the second short circuit pattern 79a made of the same material as the data lines 77a and 78a is also disposed on the first short circuit pattern 79c.

However, in this case, when forming the cut portion 81b to cut the short circuit patterns 79a and 79c when the protective layer 81 is formed, the thickness etched due to the first short circuit pattern 79a is as shown in FIG. 7. The thicker portion of the lower first short circuit pattern 79c is not removed. In order to completely cut the first short-circuit pattern 79c, overetch is required. In this case, the channel is removed because the active layer of the thin film transistor (not shown) formed in the image display area is also etched. Occurs.

As such, when the data line and the active layer are formed in one photolithography process, the data material remains on the short circuit line. In order to etch and disconnect the wire, over etching is performed. Even if the short-circuit wiring is disconnected, the channel portion of the active layer of the image display area is also etched, which causes a problem of removing the channel.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to prevent the generation of static electricity by using short-circuit wiring, to detect defects, and to reduce manufacturing processes and costs. The present invention provides an array substrate for use and a method of manufacturing the same.

1 is a cross-sectional view of a general liquid crystal display device.

2 is a plan view showing a conventional data short wiring.

3 and 4 are cross-sectional views taken along lines III-III and IV-IV in FIG. 2, respectively.

Fig. 5 is a plan view showing a data short wiring according to another conventional embodiment.

6 and 7 are cross-sectional views taken along lines VI-VI and VII-VII in FIG. 6, respectively.

8 is a plan view briefly showing an array substrate according to the present invention;

9 is a plan view showing one pixel region in the array substrate according to the present invention;

FIG. 10 is a cross-sectional view taken along the line VII-VII of FIG. 9. FIG.

11 is a plan view showing a data short wiring according to the present invention;

12 and 13 are cross-sectional views taken along the line XII-XII and XIII-XIII in FIG. 11, respectively.

14A to 14C, 15A to 15C, 16A and 16B, and 17A to 17C are manufacturing process diagrams for a data short wiring portion according to the present invention.

Description of the main parts of the drawing

310: substrate 330: gate insulating film

346: First Short Circuit Pattern 356: Impurity Semiconductor Layer

366: second paragraph pattern 370: protective layer

372: cutting portion 383: second auxiliary pattern

In the present invention for achieving the above object, in a liquid crystal display device array substrate in which a thin film transistor and a pixel electrode receiving a signal from the thin film transistor are arranged in a matrix form on the substrate, the thin film transistor extends in a first direction on the substrate. N (N is an integer) gate wirings for transmitting a signal to the thin film transistor, the first portion being made of the same material as the gate wiring and parallel to the gate wiring, and the second portion extending from the first portion. A first data short circuit wiring is formed. A gate insulating film covering the gate wiring and the first data short wiring, and the gate insulating film is formed on the gate wiring and the first data short wiring, and the gate insulating film is formed of amorphous silicon on the gate insulating film and a) extended in the first direction and spaced apart from the first data short wiring. 2) a data short wiring, b) a first semiconductor pattern extending from said second data short wiring, c) a second semiconductor pattern located between said first semiconductor pattern and corresponding to a second portion of said first data short wiring, D) a first short-circuit pattern is formed in contact with the first and second semiconductor patterns and having a first cutout portion. Next, M (M is an integer) data wires each including a 2n-1 (n is an integer) line on the first semiconductor pattern and a 2n-th line on the second semiconductor pattern are formed. A second short circuit pattern connected to the third data short circuit over the second data short circuit, a second short circuit pattern formed on the first short circuit pattern and in contact with the data wiring, and having a second cut portion corresponding to the first cut portion; have. Subsequently, the data line, the third data short line, and the second short pattern are disposed thereon, and the first contact hole and the data line partially exposing the second portion of the first data short line along with the gate insulating layer. A protective layer having a second contact hole and a third cut portion is formed on the first and second cut portions. Next, a first auxiliary pattern connected to the first data short circuit line and the data line through the first contact hole and the second contact hole is formed on the passivation layer.

Here, it is preferable that the third data short wiring, the data wiring, and the second short pattern have the same shape as the second data short wiring, the first and third semiconductor patterns, and the first short pattern.

In the present invention, the first auxiliary pattern may be made of the same material as the pixel electrode, and may further include a second auxiliary pattern made of the same material as the first auxiliary pattern and overlapping the first data short circuit line. .

According to the present invention, there is provided a method of manufacturing an array substrate for a liquid crystal display device comprising a gate line and a data line crossing, a thin film transistor connected to the gate line and the data line, and a pixel electrode receiving a signal from the thin film transistor. A first data short wiring is provided having a substrate and having a first portion parallel to the same material as the gate wiring and a second portion extending from the first portion. Subsequently, a gate insulating film is deposited on the first data short wiring, and an amorphous silicon layer and a metal layer are deposited thereon. Next, the metal layer and the amorphous silicon layer are etched in a single photolithography process to a) a second data short circuit line parallel to and spaced apart from the first data short circuit line, and b) a first extension from the second data short circuit line. A second semiconductor pattern between the semiconductor pattern and the first semiconductor pattern, c) a first short circuit pattern connecting the first and second semiconductor patterns, d) a third data short circuit pattern on the second data short pattern, ) A data wiring comprising a 2n-1 (n is an integer) interconnection on the first semiconductor pattern and a 2nth interconnection on the second semiconductor pattern, and iii) a first cutoff portion on the first short circuit pattern Form a two-short pattern. Next, a protective layer is formed and patterned on the substrate on which the data line is formed, thereby exposing a second cutout portion corresponding to the first cutout portion and cutting the first short circuit pattern and a second portion of the first data short circuit line. A first contact hole and a second contact hole exposing the data line are formed. Subsequently, a first auxiliary pattern connected to the first data short wire through the first contact hole and connected to the data wire through the second contact hole is formed on the passivation layer.

The photolithography process may include forming a photoresist pattern by coating, exposing and developing a photoresist on the metal layer, wherein the photoresist pattern has a first thickness and a first thickness corresponding to the first and second short circuit patterns. It may be made of a second thickness corresponding to the first cut portion and thinner than the first thickness.

In this case, the exposure of the photosensitive film may use a mask in which a slit pattern is formed in a portion corresponding to the first cut portion, or a mask in which a mosaic pattern is formed in a portion corresponding to the first cut portion.

Meanwhile, the forming of the first auxiliary pattern may include forming a second auxiliary pattern overlapping the first data short circuit line.

As described above, in the liquid crystal display array substrate and the manufacturing method thereof according to the present invention, a pattern consisting of the data wiring and the amorphous silicon underneath is formed by using diffraction exposure while forming a short circuit to prevent breakage of the device due to static electricity. By manufacturing in the same photolithography process, manufacturing process and cost can be reduced, and data inspection can be performed by disconnecting data wires so that defects can be detected without adding a process.

Hereinafter, an array substrate for a liquid crystal display according to an exemplary embodiment of the present invention and a manufacturing method thereof will be described in detail with reference to the accompanying drawings.

First, FIG. 8 is a diagram schematically illustrating an array substrate for a liquid crystal display according to the present invention.

As illustrated, the array substrate 100 includes a display area 110 where an image is implemented and a non-display area 120 at the edge of the display area 110.

In the display area 110, a plurality of gate lines 111 and 112 and data lines 113 and 114 intersect to define a pixel region, and gate lines 111 and 112 and data lines 113 and 114 intersect. The thin film transistor 115, which is a switching element, is formed in the portion, and the pixel electrode 117 connected to the thin film transistor 115 is formed in the pixel region.

Next, the gate wirings 111 and 112 and the data wirings 113 and 114 have gate pads 121 and data pads 123 for applying signals on the non-display area 120, respectively, and one end of each of the gate lines 111 and 112 and the data lines 113 and 114 are respectively gated. The short circuit wiring 125 and 126 and the data short circuit wiring 127 and 128 are connected. Here, the even-numbered gate wiring 112 is separated from the first gate short-circuit wiring 125 by the cut region 131, and the first gate short-circuit wiring 125 is connected to the odd-numbered gate wiring 111. The two-gate short wiring 126 is connected to the even-numbered gate wiring 112, respectively. The odd-numbered data line 113 is connected to the first data short line 127, and the even-numbered data line 114 is connected to the second data short-circuit 128, and the data lines 113 and 114. The short circuit pattern 132 cut | disconnected by the cutting part 132 is located between ().

The gate short wirings 125 and 126 and the data short wirings 127 and 128 are used to prevent the device from being destroyed by the static electricity generated during the process, and may be used for inspection to detect defects. Is cut

Next, FIGS. 9 and 10 are plan views of one pixel area in the array substrate according to the present invention, and FIG. 10 is a cross-sectional view taken along the line of FIG. 9.

As shown in the drawing, the gate wiring 221 in the horizontal direction and the gate electrode 222 extending from the gate wiring 221 are formed on the transparent insulating substrate 210, and the gate insulating film 230 is formed thereon. .

Next, an active layer 241 made of amorphous silicon and ohmic contact layers 251 and 252 made of amorphous silicon doped with impurities are sequentially formed on the gate insulating layer 230.

An upper surface of the ohmic contact layers 251 and 252 facing the source electrode 262 around the data line 261 in the vertical direction, the source electrode 262 extending from the data line 261, and the gate electrode 222. A drain electrode 263 is formed, and the data line 261 defines the pixel region by crossing the gate line 221, and the source and drain electrodes 262 and 263 together with the gate electrode 222 form a thin film transistor. Achieve.

Here, the ohmic contact layers 251 and 252 have the same shape as the data line 261, the source electrode 262, and the drain electrode 263, and the active layer 241 has the source and drain electrodes 262 and 263. Except for the channel portion therebetween, it has the same shape as the data line 261, the source electrode 262, and the drain electrode 263.

Next, a passivation layer 270 formed of a silicon nitride film, a silicon oxide film, or an organic insulating film is formed on the data line 261 and the source and drain electrodes 262 and 263, and the passivation layer 270 is a drain electrode 263. It has a contact hole 271 exposing a portion.

Next, a pixel electrode 281 made of a transparent conductive material is formed in the pixel area on the passivation layer 270, and the pixel electrode is connected to the drain electrode 263 through the contact hole 271.

11 to 13 illustrate a data short wiring portion according to the present invention. FIG. 11 is a plan view of a data short wiring portion, and FIGS. 12 and 13 are lines II-XII and XIII-XIII in FIG. The cross section is cut along the side.

As shown, a first short-circuit wiring 321 including a first portion 321 in a horizontal direction and a second portion 322 in a vertical direction with a material such as a gate electrode 222 of FIG. 10 on the substrate 310. , 322 is formed. A gate insulating film 330 is formed on the first short wirings 321 and 322, and a second short circuit formed of amorphous silicon and extending in a horizontal direction spaced apart from the first portion 321 of the first short wirings. The first short pattern 346 is disposed between the wiring 341, the semiconductor patterns 343 and 345 extending in the vertical direction, and the semiconductor pattern 343.

Next, a third short circuit line 361 extending in the horizontal direction and overlapping the second short circuit line 341 and data lines 362 and 363 extending in the vertical direction are formed, and the data wires 362, Data pads 364 and 365 are formed at one end of 363. Here, the other end of the odd-numbered data line 362 is connected to the third short-circuit line 361, the even-numbered data line 363 corresponds to the second portion 322 of the first short-circuit line, A second short circuit pattern 366 is formed between the data line 362 and the even-numbered data line 363.

On the other hand, an impurity made of amorphous silicon doped with impurities and having the same shape as those under the third short circuit line 361, the data lines 362 and 363, the data pads 364 and 365, and the second short pattern 366. The semiconductor layers 351, 353, 355, and 356 are formed, and the third short circuit line 361, the data wires 362 and 363, the data pads 364 and 365, and the second short circuit pattern 366 are impurity semiconductors. The second short circuit lines 341, the semiconductor patterns 343 and 345, and the first short pattern 346 under the layers 351, 353, 355, and 356 have the same shape.

Next, a protective layer 370 is formed on the third short circuit line 361, the data wires 362 and 363, the data pads 364 and 354, and the second short circuit pattern 366, and the protective layer 370. Has a plurality of first contact holes 371 exposing the other end of the second portion 322 of the first short-circuit wiring and second contact holes 373 exposing the data pads 364 and 365. In addition, the protective layer 370 has cutouts 372 that cut the short-circuit patterns 341 and 361 and the impurity semiconductor layer 351. In this case, the lower gate insulating layer 330 is partially removed.

Subsequently, the first auxiliary pattern 381 is formed of the same material as the pixel electrode 281 of FIG. 10 and extends in the horizontal direction and overlaps the first short-circuit wiring 321 on the passivation layer 370. Second auxiliary patterns 382 and 383 extending to overlap the data wires 362 and 363 and the data pads 364 and 365 are formed, and the second auxiliary patterns 382 and 383 have a second contact hole 373. Is connected to the data pads 364 and 365. Here, the even-numbered second auxiliary pattern 383 partially overlaps with the other end of the second portion 322 of the first short-circuit wiring and is connected through the first contact hole 371.

A process of manufacturing the data short-circuit wiring portion with four masks will be described with reference to FIGS. 14A to 14C, 15A to 15C, 16A and 16B, 17A to 17C, and FIGS. 11 to 13. do.

First, as illustrated in FIGS. 14A to 14C, first short wirings 321 and 322 are formed by depositing a conductive material such as a metal on the transparent insulating substrate 310 and patterning using a first mask. Here, the first short wirings 321 and 322 are formed of the first portion 321 in the horizontal direction and the second portion 322 in the vertical direction, and are made of the same material as the gate electrode 222 of FIG. 10. Is formed.

Next, as shown in FIGS. 15A to 15C, the gate insulating film 330 is formed by depositing a silicon nitride film or a silicon oxide film, and the amorphous silicon layer 340, the doped silicon layer 350, and the metal layer ( After sequentially depositing 360, a photoresist film is applied, exposed with a second mask 400, and developed to form photoresist patterns 391 and 392. Here, as shown in the drawing, a slit pattern 422 having an interval smaller than the resolution of the light blocking film 421 and the exposure machine is formed on the transparent substrate 410. Accordingly, in the region corresponding to the light shielding film 421, light is not transmitted, and thus the first photosensitive film pattern 391 having the first thickness is formed, and the light is diffracted in the portion corresponding to the slit pattern 422, so that the first photosensitive film pattern A second photosensitive film pattern 392 having a thickness thinner than 391 is formed. In this case, the slit pattern 422 of the second mask 400 is not limited thereto, and may be a mosaic pattern smaller than the resolution of the exposure machine.

Next, as shown in FIGS. 16A and 16B, the lower layers are etched using the photoresist patterns 391 and 392 as masks, thereby forming the third short-circuit wiring 361, the data wiring 363, the data pad 365 and the first film. The second short circuit pattern 366, the impurity semiconductor layers 351, 353, 355, and 356, the second short circuit wiring 341, the semiconductor patterns 343 and 345, and the first short circuit pattern 346 are formed. In this case, the second short pattern 366 and the impurity semiconductor layer 356 are cut, but the first short pattern 346 is not cut.

Next, as shown in FIGS. 17A to 17C, the protective layer 370 is formed of a silicon nitride film, a silicon oxide film, or an organic insulating film, and patterned together with the gate insulating film 230 by using a third mask to form the first short-circuit wiring. The first contact hole 371 partially exposing the second portion 322 and the third contact hole 373 exposing the data pad 365 are formed, and the protective layer 370 and the second shorting pattern 346 are formed. Patterning to form the cut portion 372.

Next, as shown in FIGS. 11 to 13, a first conductive pattern 381 and a second auxiliary pattern are deposited by depositing a transparent conductive material such as indium-tin-oxide and patterning it with a fourth mask. Patterns 382 and 383 are formed. Here, the first auxiliary pattern 381 extends in the horizontal direction and overlaps the first short-circuit wiring 321, and the second auxiliary pattern 382 and 383 extend in the vertical direction so that the data wirings 362 and 363 and the data are extended. The pad overlaps the pads 364 and 365, and is connected to the data pads 364 and 365 through the second contact hole 373. In addition, the even-numbered second auxiliary pattern 383 is also connected to the second portion 322 of the first short-circuit wiring through the first contact hole 371.

As described above, in the present invention, by manufacturing and separating the data short-circuit wiring using four masks, the inspection process can be performed to detect a defect, and the manufacturing process and cost can be reduced.

The present invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit of the present invention.

In the array substrate for a liquid crystal display device according to the present invention, short circuit wiring is formed to prevent destruction of an element due to electrostatic generation, while manufacturing the array substrate with four masks using diffraction exposure to reduce manufacturing process and cost, and By disconnecting the wires and conducting an electrical inspection, defects can be detected without the addition of a process.

Claims (9)

In an array substrate for a liquid crystal display device, a thin film transistor and a pixel electrode receiving a signal from the thin film transistor are arranged in a matrix form on a substrate. N (N is an integer) gate wirings extending in a first direction on the substrate; A first data short wiring formed of the same material as the gate wiring and having a first portion parallel to the gate wiring and a second portion extending from the first portion; A gate insulating film covering the gate wiring and the first data short wiring; (B) a second data short wiring formed of amorphous silicon on the gate insulating film and extending in the first direction and spaced apart from the first data short wiring, and b) a first extending from the second data short wiring. A semiconductor pattern, c) a second semiconductor pattern located between the first semiconductor pattern and corresponding to the second portion of the first data short-circuit wiring, d) a first contacting the first and second semiconductor patterns and having a first cutout Short circuit pattern; M (M is an integer) data wires each having a 2n-1 (n is integer) wiring on the first semiconductor pattern and a 2n-th wiring on the second semiconductor pattern; A third data short wiring connected to the data wire and above the second data short wiring; A second short circuit pattern formed on the first short circuit pattern and in contact with the data line and having a second cutout corresponding to the first cutout; A first contact hole covering the data line, the third data short line, and the second short pattern, the first contact hole exposing the second portion of the first data short line along with the gate insulating layer, and the second contact hole partially exposing the data line. A protective layer having a third cutout on the first and second cutouts; A first auxiliary pattern formed on the passivation layer and connected to the first data short circuit line and the data line through the first contact hole and the second contact hole, respectively; Array substrate for a liquid crystal display device comprising a. The method of claim 1, And the third data short wiring, the data wiring, and the second short pattern have the same shape as the second data short wiring, the first and third semiconductor patterns, and the first short pattern. The method of claim 2, And the first auxiliary pattern is made of the same material as the pixel electrode. The method of claim 3, wherein And a second auxiliary pattern made of the same material as the first auxiliary pattern and overlapping the first data short circuit line. A method of manufacturing an array substrate for a liquid crystal display device, comprising: a gate line and a data line crossing, a thin film transistor connected to the gate line and the data line, and a pixel electrode receiving a signal from the thin film transistor. Providing a substrate; Forming a first data shorting interconnect having a first portion parallel to the gate interconnection and a second portion extending from the first interconnection, the same material as the gate interconnection; Depositing a gate insulating film on the first data short wiring; Depositing an amorphous silicon layer and a metal layer on the gate insulating layer; The metal layer and the amorphous silicon layer are etched in one photolithography process to a) a second data short wiring parallel to and spaced apart from the first data short wiring, b) a first semiconductor pattern extending from the second data short wiring And a second semiconductor pattern between the first semiconductor pattern, c) a first short circuit pattern connecting the first and second semiconductor patterns, d) a third data short circuit pattern above the second data short circuit pattern, A data line consisting of a 2n-1 (n is integer) wiring on the first semiconductor pattern and a 2n-th wiring on the second semiconductor pattern, and iii) a second short circuit having a first cutout on the first short-circuit pattern. Forming a pattern; A first contact is formed on the substrate on which the data line is formed and patterned to expose a second cutout portion corresponding to the first cutout portion and to cut the first short circuit pattern and a second portion of the first data short circuit wire. Forming a hole and a second contact hole exposing the data line; Forming a first auxiliary pattern on the passivation layer and connected to the first data short circuit line through the first contact hole and to the data line through the second contact hole; Method of manufacturing an array substrate for a liquid crystal display device comprising a. The method of claim 5, The photolithography process may include forming a photoresist pattern by coating, exposing and developing a photoresist on the metal layer, wherein the photoresist pattern has a first thickness corresponding to the first and second short circuit patterns and the first cutout. The manufacturing method of the array substrate for liquid crystal display devices which respond | corresponds and consists of a 2nd thickness thinner than a said 1st thickness. The method of claim 6, The exposure method of the said photosensitive film | membrane manufacturing method of the array substrate for liquid crystal display devices using the mask in which the slit pattern is formed in the part corresponding to the said 1st cut part. The method of claim 6, Exposure of the said photosensitive film is a manufacturing method of the array substrate for liquid crystal display devices using the mask in which the mosaic pattern is formed in the part corresponding to the said 1st cut part. The method of claim 5, The forming of the first auxiliary pattern comprises forming a second auxiliary pattern overlapping the first data short circuit line.