KR20030028516A - Advanced Image Sensor Chip and Package Fabrication with this. - Google Patents
Advanced Image Sensor Chip and Package Fabrication with this. Download PDFInfo
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- KR20030028516A KR20030028516A KR1020030012486A KR20030012486A KR20030028516A KR 20030028516 A KR20030028516 A KR 20030028516A KR 1020030012486 A KR1020030012486 A KR 1020030012486A KR 20030012486 A KR20030012486 A KR 20030012486A KR 20030028516 A KR20030028516 A KR 20030028516A
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- South Korea
- Prior art keywords
- image sensor
- sensor chip
- package
- epoxy
- chip
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title description 13
- 239000011521 glass Substances 0.000 claims abstract description 14
- 239000004593 Epoxy Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920006336 epoxy molding compound Polymers 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229910001111 Fine metal Inorganic materials 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229920002379 silicone rubber Polymers 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229920001169 thermoplastic Polymers 0.000 claims 1
- 239000004416 thermosoftening plastic Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract description 2
- 238000009966 trimming Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000011856 silicon-based particle Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229940125773 compound 10 Drugs 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZLVXBBHTMQJRSX-VMGNSXQWSA-N jdtic Chemical compound C1([C@]2(C)CCN(C[C@@H]2C)C[C@H](C(C)C)NC(=O)[C@@H]2NCC3=CC(O)=CC=C3C2)=CC=CC(O)=C1 ZLVXBBHTMQJRSX-VMGNSXQWSA-N 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000010137 moulding (plastic) Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
Abstract
Description
종래 이미지 센서 칩(Image Sensor Chip)과 이를 사용한 이미지 센서 패캐지 제조는 (도 4)와 같이 일반적으로,Conventional image sensor chip (Image Sensor Chip) and the image sensor package manufacturing using the same as shown in Figure 4,
- 마이크로 렌즈가 형성되어 있는 이미지 센서 칩(Image Sensor Chip)(1)을-Image sensor chip (1) in which microlenses are formed
에폭시(Epoxy)(4)를 사용하여 플라스틱(Plastic)이나 세라믹(Ceramic) 재Plastic or ceramic materials using epoxy (4)
질의 패캐지 몸체(Package Body)(13)의 캐비티(Cavity)(14) 내에 부착한Attached in the cavity 14 of the vaginal package body 13
다.All.
- 부착된 이미지 센서 칩의 I/O단자(8)와 캐비티 내의 I/O 단자(6)를 미세금-Finely close the I / O terminal 8 of the attached image sensor chip and the I / O terminal 6 in the cavity
속선(Gold Wire 또는 Aluminum Wire)(7)으로 연결시킨다.It is connected by wire (Gold Wire or Aluminum Wire) (7).
- 빛이 통과할 수 있는 유리뚜껑(Glass Lid)(12)과 접착성 에폭시(Epoxy)-Glass Lid (12) and Adhesive Epoxy through which light can pass
(11)를 사용하여 캐비티를 밀봉(Sealing)한다.(11) is used to seal the cavity.
즉, 이러한 이미지 센서 제품의 형태와 구조에 있어서는 (도 4)와 같이,That is, in the form and structure of such an image sensor product, as shown in FIG.
- 패캐지 몸체(Package Body)(13)Package Body (13)
- 이미지 센서 칩(Image Sensor Chip)(1)Image Sensor Chip (1)
- 미세 알루미늄선(Aluminum Wire)(7)Fine Aluminum Wire (7)
- 에폭시(Epoxy)(4),(11)-Epoxy (4), (11)
- I/O 단자(Bond Pad, Inner Lead, Out Lead)(8),(6),(9)I / O terminals (Bond Pad, Inner Lead, Out Lead) (8), (6), (9)
- 유리뚜껑(Glass Lid)(12)Glass Lid (12)
로 구성되어 있다.Consists of
종래 기술은 일반적으로 이미지 센서 칩(Image Sensor Chip)을 패캐징 (Packaging)하여 사용하는데 있어, 이미지 센서 칩을 부착하기 위한 공간 즉 캐비티(Cavity)를 필요로 하는 구조의 패캐지에 적용하기 때문에 패캐지 부피를 크게 줄일 수가 없다. 또한 시간이 지남에 따라 공간(캐비티 : Cavity)내에 부착되어 있는 이미지 센서 칩의 절단면(Sawed Edge)에서 발생하는 실리콘 부스러기(SiliconParticle)가 이미지 센서 칩의 화상소자 지역(Pixel Area)에 부착될 수 있다.In the prior art, the packaging of the image sensor chip (Image Sensor Chip) is generally used, and the package volume is applied to a package having a structure that requires a space (cavity) for attaching the image sensor chip Cannot be greatly reduced. In addition, silicon particles generated at the cut edges of the image sensor chip attached in a cavity may be attached to the pixel area of the image sensor chip over time. .
이러한 사항들은 이미지 센서 칩의 불량(품질저하)을 유발할 수 있고, 소형의 이미지 센서 패캐지 제품을 필요로 하는 휴대통신 및 의료기기 분야 등에 장애요인이 되고 있다.These issues can cause defects (deterioration) of the image sensor chip, and are an obstacle to the field of mobile communication and medical devices requiring a small image sensor package product.
본 발명은 위에서 말한 문제점을 해결하면서 패캐징(Packaging)하는 제조비용을 줄일 수 있도록 하는 이미지 센서 칩과 이를 사용한 패캐지 제조상에 있어서의 구조를 제시하는 것이다.SUMMARY OF THE INVENTION The present invention proposes an image sensor chip and a structure in package manufacturing using the same, which can reduce the manufacturing cost of packaging while solving the above problems.
(도 1)은 본 발명의 실시 예에 따른 이미지 센서 칩 단면도1 is a cross-sectional view of an image sensor chip according to an exemplary embodiment of the present invention.
(도 2)는 본 발명의 실시 예에 따른 이미지 센서 패캐지 단면도2 is a cross-sectional view of an image sensor package according to an exemplary embodiment of the present invention.
(도 3)은 종래기술의 예에 따른 이미지 센서 칩 단면도3 is a cross-sectional view of an image sensor chip according to an example of the prior art.
(도 4)는 종래기술의 예에 따른 이미지 센서 패캐지 단면도4 is a cross-sectional view of an image sensor package according to an example of the related art.
(도5a)∼(도5d)는 본 발명의 실시 예에 따른 이미지 센서 칩 제조 공정별 단면도5A to 5D are cross-sectional views of an image sensor chip manufacturing process according to an exemplary embodiment of the present invention.
(도6a)∼(도6d)는 본 발명의 실시 예에 따른 이미지 센서 패캐지 제조 공정별 단면도6A to 6D are cross-sectional views of an image sensor package manufacturing process according to an exemplary embodiment of the present invention.
본 발명은 캐비티(Cavity)가 형성되어 있는 종래기술의 이미지 센서 패캐지 구조에서 벗어나, 이미지 센서 칩 표면에 패캐지의 유리뚜껑(Glass Lid)과 같은 역할을 할 수 있는 투명층(Glass Layer)을 형성한 구조의 이미지 센서 칩을 제조 후, 이를 사용하여 유리뚜껑을 사용치 않는 구조의 플라스틱 패캐지 형태의 이미지 센서 제품을 제조하는 것으로써, 제조 공정을 추가하여 최종적으로 (도 1) 및 (도 2)와 같이 ;The present invention is a structure in which a glass layer is formed on the surface of the image sensor chip, which is a glass lid of the package, away from the image sensor package structure of the prior art in which a cavity is formed. After manufacturing the image sensor chip of the, by using it to manufacture an image sensor product in the form of a plastic package structure without the glass lid, by adding a manufacturing process finally (Fig. 1) and (Fig. 2) ;
- 투명층(Glass Layer)(3)Glass Layer (3)
- 이미지 센서 칩(Image Sensor Chip)(1)Image Sensor Chip (1)
- 다이패들(Die Paddle)(5)Die Paddle (5)
- 인너리드(Inner Lead, I/O단자)(6)-Inner Lead (I / O Terminal) (6)
- 본드패드(Bond Pad, I/O단자)(8)Bond Pad (I / O Terminal) (8)
- 미세 금속선(Gold Wire, Aluminum Wire)(7)-Gold Wire, Aluminum Wire (7)
- 아웃리드(Out Lead, Pin, I/O단자)(9)-Out Lead (Out Lead, Pin, I / O Terminal) (9)
등으로 되어 있다.Etc.
아울러, 본 발명인 칩 표면에 투명층(Glass Layer)을 갖는 이미지 센서 칩을 제조하는 공정의 예로서, (도5a)∼(도5d)와 같이 ;In addition, as an example of a process of manufacturing an image sensor chip having a transparent layer (Glass Layer) on the chip surface of the present invention, as shown in Figs. 5A to 5D;
- 마이크로 렌즈(Micro Lens)(2)를 갖는 이미지 센서 칩(2)에 스핀코터(SpinSpin coater on an image sensor chip (2) with a micro lens (2)
Coater)장비를 사용하여 액체(Solution) 상태의 투명물질(Glass-SolutionGlass-Solution in solution using Coater
Material)을 도포(Coating)한 후, 이를 경화(Bake)하여 투명층(GlassAfter coating the material, it is baked to make a transparent layer
Layer)(3)을 형성한다. ------ (도 5a)Layer (3) is formed. ------ (Figure 5a)
- 투명층 위에 감광제(Photo Resist)(15)를 도포한 후, 포토마스크(PhotoPhoto Resist (15) is applied on the transparent layer, and then a photo mask (Photo)
Mask)를 사용한 현상(Development)과 식각(Etching) 방식으로 이미지센서Image sensor by developing and etching method using mask
칩의 I/O단자인 본드패드(Bond Pad)(8)부분의 투명층(Glass Layer)을 제거Remove the glass layer in the bond pad (8) part of the chip I / O terminal
하여 본드패드를 오픈(Open)한다. ------ (도 5b)/(도 5c)To open the bond pad. ------ (Fig. 5b) / (Fig. 5c)
- 투명층 위에 도포되어 있는 감광제(Photo Resist)를 제거(Remove)한다.Remove the photo resist applied on the transparent layer.
------ (도 5d)------ (Fig. 5d)
이와 같이 투명층(Glass Layer)이 형성된 이미지 센서 칩을 사용하여 플라스틱 몰딩(Plastic Molding) 형태의 이미지 센서 반도체 패캐지(Package)를 제조하는 공정의 예로서,As an example of a process of manufacturing an image sensor semiconductor package in the form of plastic molding using an image sensor chip having a glass layer formed thereon,
(도6a)∼(도6d)와 같이 ;As shown in Figs. 6A to 6D;
- 투명층(Glass Layel)(3)이 형성된 이미지 센서 칩이 있는 웨이퍼(Wafer)를A wafer with an image sensor chip having a glass layer 3 formed thereon;
잘러(Sawing), 이미지 센서 칩(Image Sensor Chip)(1)을 패캐지용 리드프Sawing, lead package for packaging the Image Sensor Chip (1)
레임(Leadframe)의 다이패들(Die Paddle)(5)에 접착용 에폭시(AdhesiveAdhesive for bonding to die paddle 5 of the leadframe
Epoxy)(4)를 사용하여 부착한다. ------ (도 6a)Attach using epoxy (4). ------ (Figure 6a)
- 이미지 센서 칩(Image Sensor Chip)의 본드패드(Bond Pad)(8)와 리드프레Bond pads (8) and lead presses of image sensor chips
임의 인너리드(Inner Lead, I/O단자)(6)를 미세금선(Gold Wire)(7)으로 연Inner Lead (I / O Terminal) (6) Connected to Gold Wire (7)
결한다. ------ (도 6b)Defect. ------ (Figure 6b)
- 이미지 센서 칩에 마이크로 렌즈(2)가 있는 화상소자 지역(Pixel Area)에-In the pixel area with the microlens (2) on the image sensor chip.
에폭시 몰딩 컴파운드(Epoxy Molding Compound)(10)가 덮히지 않도록 하는To prevent the epoxy molding compound 10 from being covered
구조의 몰드금형(Mold Die)을 사용하여 몰딩(Molding)을 실시한다.Molding is carried out using a mold die having a structure.
------ (도 6c)------ (Figure 6c)
- 패캐지 몸통(Package Body)(10)외부에 있는 I/O 단자를 트리밍/포밍Trim / form the I / O terminals on the outside of the Package Body (10).
(Trimming/Forming)하여 아웃리드(Out Lead, I/O단자)(9)를 형성한다.(Trimming / Forming) to form an out lead (I / O terminal) (9).
------ (도 6d)------ (Figure 6d)
본 발명은 종래의 이미지 센서 칩과 이를 사용한 패캐지에 비해 ;The present invention compared to a conventional image sensor chip and a package using the same;
- 패캐지 부피를 줄일 수 있으며,-Reduce package volume,
- 칩 절단면에서 발생할 수 있는 실리콘 부스러기(Silicon Particle)를 근본-Based on Silicon Particle that can occur on chip cutting surface
적으로 차단하여, 이로 인한 불량을 막을 수 있으며,By blocking it, preventing the defect caused by
- 패캐지에 사용되는 원재료 및 제조공정 비용을 줄일 수 있다.-Reduce the cost of raw materials and manufacturing process used for packaging.
또한,Also,
- 이미지 센서 칩의 마이크로 렌즈(Micro Lens)와 투명층(Glass Layer)의 굴-Oysters of Micro Lens and Glass Layer of Image Sensor Chip
절률(Refractive Index)을 상대적으로 조절하여, 보다 선명한 화상을 만들By adjusting the Refractive Index relatively, you can make a clearer picture.
수 있다.Can be.
따라서, 본 발명의 이미지 센서 칩(Image Sensor Chip)과 이를 사용한 패캐지(Package) 제품구조 및 제조공정은 앞으로의 이미지 센서 제품 사용에 크게 기여할 수 있다.Therefore, the image sensor chip of the present invention, and the package product structure and manufacturing process using the same may greatly contribute to the future use of the image sensor product.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| KR10-2003-0012486A KR100494025B1 (en) | 2003-02-27 | 2003-02-27 | Method manufacturing for image sensor |
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|---|---|---|---|
| KR10-2003-0012486A KR100494025B1 (en) | 2003-02-27 | 2003-02-27 | Method manufacturing for image sensor |
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| KR100494025B1 KR100494025B1 (en) | 2005-06-10 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100681779B1 (en) * | 2004-06-15 | 2007-02-12 | 후지쯔 가부시끼가이샤 | Image pickup device and production method thereof |
| KR100681697B1 (en) * | 2005-12-02 | 2007-02-15 | 에스티에스반도체통신 주식회사 | Semiconductor package driving by optic |
| KR100729007B1 (en) * | 2006-01-19 | 2007-06-14 | 일렉비젼 인크. | Contact image capturing structure |
| KR100741932B1 (en) * | 2006-07-31 | 2007-07-23 | 동부일렉트로닉스 주식회사 | Method for manufacturing a cmos image sensor |
| KR100809682B1 (en) * | 2005-07-11 | 2008-03-06 | 삼성전자주식회사 | Method of manufacturing optical device attached transparent cover and method of manufacturing optical device module using the same |
| KR100899859B1 (en) * | 2006-12-02 | 2009-05-29 | 크루셜텍 (주) | Image Sensor Pakage of Optical Pointing Device |
| CN104538416A (en) * | 2015-02-03 | 2015-04-22 | 华天科技（昆山）电子有限公司 | High-reliability fully-closed CMOS image sensor structure and production method thereof |
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| KR102334198B1 (en) * | 2017-07-20 | 2021-12-02 | 엘지이노텍 주식회사 | Camera module package |
| KR20220099270A (en) | 2021-01-06 | 2022-07-13 | 김영선 | image Sensor / Semiconductor Package and Manufacturing this |
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2003
- 2003-02-27 KR KR10-2003-0012486A patent/KR100494025B1/en active IP Right Grant
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100681779B1 (en) * | 2004-06-15 | 2007-02-12 | 후지쯔 가부시끼가이샤 | Image pickup device and production method thereof |
| KR100809682B1 (en) * | 2005-07-11 | 2008-03-06 | 삼성전자주식회사 | Method of manufacturing optical device attached transparent cover and method of manufacturing optical device module using the same |
| KR100681697B1 (en) * | 2005-12-02 | 2007-02-15 | 에스티에스반도체통신 주식회사 | Semiconductor package driving by optic |
| KR100729007B1 (en) * | 2006-01-19 | 2007-06-14 | 일렉비젼 인크. | Contact image capturing structure |
| KR100741932B1 (en) * | 2006-07-31 | 2007-07-23 | 동부일렉트로닉스 주식회사 | Method for manufacturing a cmos image sensor |
| KR100899859B1 (en) * | 2006-12-02 | 2009-05-29 | 크루셜텍 (주) | Image Sensor Pakage of Optical Pointing Device |
| CN104538416A (en) * | 2015-02-03 | 2015-04-22 | 华天科技（昆山）电子有限公司 | High-reliability fully-closed CMOS image sensor structure and production method thereof |
| CN104538416B (en) * | 2015-02-03 | 2018-05-01 | 华天科技（昆山）电子有限公司 | Totally-enclosed CMOS image sensor structure of high reliability and preparation method thereof |
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| KR100494025B1 (en) | 2005-06-10 |
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