JP2007150038A - Optical semiconductor device and method for fabrication thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device which prevents malfunction due to light and ensures a desirable operability, and to provide a method for fabrication thereof. <P>SOLUTION: A coating is formed on a receiver 21 on a bare chip 11 having a semiconductor device equipped with the receiver 21, and thereafter it is mounted on a die pad 13 of a substrate 12 having an electrode terminal 14. An electrode pad 22 and the electrode terminal 14 are electrically connected via a wire 15, and thereafter a resin 16 is pasted on the periphery and top of the bare chip 11. Successively, the resin 16 is cured to remove a coating member. Accordingly, the optical semiconductor device 10 is manufactured as defiantly sealed with the resin 16 up to the receiver 21. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an optical semiconductor device including a photodiode and a method for manufacturing the same.

  2. Description of the Related Art Conventionally, in a semiconductor device, in order to protect metal members such as electrode pads and wires from corrosion caused by moisture contained in outside air, dust, dust, and the like, a method of sealing these metal members with a resin has been employed. When the semiconductor device is an optical semiconductor device including a photodiode or the like, a resin having translucency is used so as not to prevent transmission of light from the light receiving unit mounted on the optical semiconductor device or transmission of light to the light receiving unit. It is used and sealed (for example, Patent Document 1).

  Conventionally, when light is applied to the signal wiring of a semiconductor device, the circuit may malfunction due to the generation of parasitic current, which may prevent accurate current detection. The semiconductor element circuit (signal processing circuit) of the apparatus is covered with a metal light-shielding film.

For example, a conventional semiconductor device 80 is shown in FIG. As illustrated, the semiconductor device 80 includes a bare chip 81, a substrate 82, a die pad 83, an electrode terminal 84, a wire 85, a sealing resin 86, a metal light shielding film 87, a light receiving portion 91, and an electrode pad 92. And a signal processing circuit unit 93. A metal light shielding film 87 is formed so as to cover the signal processing circuit section 93. The bare chip 81, the electrode terminal 84, the wire 85, and the like are covered with a sealing resin 86 made of a transparent resin.
JP-A-5-136293 JP 2001-196415 A

  Incidentally, the metal light-shielding film 87 of the conventional semiconductor device 80 shown in FIG. 5 is formed by forming a photoresist pattern and removing an unnecessary metal layer after film formation by sputtering or the like. Therefore, since it is necessary to use an expensive photomask in order to form the metal light shielding film 87, there is a problem that the manufacturing cost of the optical semiconductor device 80 increases. Furthermore, the formation of the metal light shielding film 87 increases the manufacturing process of the optical semiconductor device 80, and there is a problem that the manufacturing cost increases due to an increase in the number of processes. However, as described above, in the conventional optical semiconductor device, the entire bare chip 81 is packaged with the sealing resin 86 made of a transparent resin. It was impossible.

  Therefore, it is possible to shorten the manufacturing process and manufacturing time without using a metal light-shielding film, and to protect the metal member from the external environment and prevent malfunction of the circuit due to light irradiation, thereby achieving good operability. There is a need for an optical semiconductor device and a method for manufacturing the same.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide an optical semiconductor device having good operability and a method for manufacturing the same.

In order to achieve the above object, an optical semiconductor device according to the first aspect of the present invention includes:
A substrate on which electrode terminals are formed;
A bare chip mounted on the substrate and comprising an electrode pad and a semiconductor element having a light receiving portion or a light emitting portion;
A conductive member that electrically connects the electrode terminal and the electrode pad;
It further comprises an opaque resin that covers at least the conductive member and the electrode pad and is formed so as to challenge the light receiving portion or the light emitting portion of the bare chip.

  The bare chip may have a substantially rectangular shape, and the electrode pad may be formed along each of two opposing sides of the bare chip.

  The bare chip may be substantially rectangular, and the electrode pad may be formed on an outer peripheral portion along each of the four sides of the bare chip.

  The light receiving unit or the light emitting unit may be formed in a substantially central region of the bare chip.

In order to achieve the above object, a method of manufacturing an optical semiconductor device according to the second aspect of the present invention includes:
A covering member forming step of forming a covering member on the light receiving portion or the light emitting portion of the bare chip in which the light receiving portion or the light emitting portion and the electrode pad of the semiconductor element are formed;
A mounting step of mounting the bare chip on a substrate;
A connection step of electrically connecting the electrode pad formed on the bare chip and the electrode terminal formed on the substrate with a conductive member;
An application step of applying the light-impermeable resin so that at least the electrode pad and the conductive member are covered with the light-impermeable resin;
A covering member removing step for removing the covering member formed on the light receiving portion or the light emitting portion of the bare chip;
In the application step, the resin is applied so as to challenge the light receiving portion or the light emitting portion of the bare chip.

In the mounting step, a plurality of the bare chips are mounted in a matrix on the substrate,
A cutting step of cutting the substrate to obtain a plurality of the optical semiconductor devices may be further provided.

  In the mounting step, the bare chip may be mounted on the substrate previously cut for each optical semiconductor device.

  The bare chip may have a substantially rectangular shape, and the electrode pad may be formed along each of two opposing sides of the bare chip.

  The bare chip may be substantially rectangular, and the electrode pad may be formed on an outer peripheral portion along each of the four sides of the bare chip.

  In the application step, the resin may be applied along the outer periphery of the bare chip.

  According to the present invention, an optical semiconductor device having good operability and a method for manufacturing the same can be provided by forming a covering member on a light receiving portion or a light emitting portion of a bare chip and then applying a sealing resin. .

  Hereinafter, an optical semiconductor device and a manufacturing method thereof according to embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a diagram showing a configuration of an optical semiconductor device 10 according to an embodiment of the present invention. FIG. 1A is a plan view of the optical semiconductor device 10, and FIG. 1B is a cross-sectional view taken along line AA of the optical semiconductor device 10 shown in FIG. The optical semiconductor device 10 is a device in which a bare chip 11 on which a semiconductor element is formed is mounted on a substrate 12.

  As shown in FIGS. 1A and 1B, the optical semiconductor device 10 includes a bare chip 11, a substrate 12, a die pad 13, an electrode terminal 14, a wire 15, and a resin 16. The bare chip 11 includes a light receiving unit 21, an electrode pad 22, and a signal processing circuit unit 23.

  The bare chip 11 includes an optical semiconductor element such as a photodiode, for example, and includes a light receiving portion (or light emitting portion) 21 of the optical semiconductor element on one main surface. As shown in FIG. 1, the light receiving portion 21 is formed in a substantially central region of the bare chip 11. The bare chip 11 has a rectangular outer shape and is mounted on a die pad 13 provided on the substrate 12. The bare chip 11 is covered with the resin 16 except for the light receiving portion 21. In addition, electrode pads 22 are formed on the outer peripheral portion along each side of the upper surface of the bare chip 11. The electrode pad 22 is electrically connected to the electrode terminal 14 formed on the substrate 12 via the wire 15. The signal processing circuit unit 23 is formed between the light receiving unit 21 and the electrode pad 22 as shown in FIG.

  The substrate 12 is formed in a rectangular shape, for example. The substrate 12 is made of, for example, a flexible substrate such as a glass epoxy resin plate or a polyimide film. A die pad 13 is formed in the central region of the substrate 12, and a plurality of electrode terminals 14 that can be connected to the outside are formed along each side of the substrate 12 in the vicinity of the outer edge of the substrate 12. Yes.

The resin 16 is formed so as to cover the electrode pads 22 formed on the four sides of the bare chip 11, the wires 15, and a part of the electrode terminals 14, and is formed so as to challenge the light receiving unit 21. The resin 16 is made of a light-impermeable resin in order to satisfactorily prevent the electrode pad 22, the signal processing circuit unit 23, etc. from being irradiated with light, and is made of, for example, black epoxy resin. By covering the electrode pad 22 and the wire 15 with the resin 16, the electrode pad 22, the wire 15 and the like are protected from the external environment such as dust and moisture. Furthermore, since the resin 16 covers the upper part of the signal processing circuit 23 and is opaque, it can prevent malfunction due to light irradiation, and the optical semiconductor device 10 can operate satisfactorily.
In the above-described embodiment, the electrode pads 22 are formed on all four sides of the bare chip 11. However, the electrode pads 22 may be formed only on two opposite sides of the bare chip 11.

  As described above, in the optical semiconductor device 10 of the present embodiment, the wire 15, the electrode pad 22, the signal processing circuit 23, and a part of the electrode terminal 14 are covered with the opaque resin. These can be protected from the external environment including dust, moisture, etc., and malfunction due to light irradiation can be prevented. Therefore, the optical semiconductor device 10 has good operability.

Next, a method for manufacturing the optical semiconductor device 10 will be described with reference to the drawings.
2 to 4 are diagrams for explaining a method of manufacturing the optical semiconductor device 10.

  First, as shown in FIG. 2A, a light receiving portion 21, an electrode pad 22, a signal processing circuit 23, and the like are formed on a semiconductor wafer W such as silicon by a predetermined method. At this stage, a plurality of light receiving portions 21, electrode pads 22, signal processing circuits 23, and the like are formed in a matrix. Further, it is preferable that the light receiving portion 21 is formed in a substantially central region of the bare chip 11 because a process of applying a resin 16 described later becomes easy.

  Next, a metal mask (screen printing plate) 51 having a plurality of openings 51 a is positioned on the semiconductor wafer W so that the light receiving unit 21 is exposed. The opening 51a is formed in substantially the same shape so as to overlap the light receiving unit 21.

  Next, as shown in FIG. 2C, the top of the metal mask 51 is covered so that the opening 51a provided in the metal mask 51 is filled with a photoresist, a water-soluble resin, or the like so as to cover the light receiving portion 21. Move the squeegee horizontally. Thereafter, the covering member 52 is formed by curing a photoresist, a water-soluble resin, or the like by ultraviolet rays or heating. Subsequently, the metal mask 51 is removed, and only the covering member 52 is left on the light receiving unit 21. Further, the wafer is cut along the dicing line to obtain a plurality of bare chips 11.

  Subsequently, as shown in FIG. 2D, the bare chip 11 in which the covering member 52 is formed on the light receiving unit 21 is mounted on the substrate 12 on which the electrode terminals 14 are provided. An adhesive paste material is applied in advance to the die pad 13 where the bare chip 11 is mounted. The bare chip 11 is mounted on the adhesive paste material, and the substrate 12 is placed in a heating furnace, and the adhesive paste material is thermally cured to fix the bare chip 11 to the substrate 12. In order to manufacture a plurality of optical semiconductor devices, a plurality of sets of patterns of die pads 13 and a plurality of electrode terminals 14 for forming one optical semiconductor device are formed in a matrix on the initial substrate 12. Yes.

  Next, as shown in FIG. 2D, the electrode pad 22 formed on the outer peripheral portion of the surface of the bare chip 11 and the electrode terminal 14 formed on the substrate 12 are electrically connected by the wire 15 using a wire bonder. Connect to.

  Subsequently, as shown in FIG. 3E, a resin 16 is applied and covered on the electrode pads 22 formed on the bare chip 11, the wires 15, and the peripheral portions of the wires 15. As the resin 16, an opaque resin, for example, a thermosetting black epoxy resin or the like is used. In this coating process, the substrate 12 is placed on an XY stage (not shown) that can move in two directions of X and Y, and the resin 16 filled from the cylinder mounted on the dispenser is pushed out. The cylinder and / or the XY stage is moved so as to move relatively in the X direction by a predetermined distance, and the electrode pad 13, the wire 15, and the peripheral portion of the wire 15 are covered with the resin 16 on one side of the bare chip 11. After the resin 16 is applied to one side of the bare chip 11, the resin 16 is continuously applied to a side orthogonal to the one side of the bare chip 11 to which the resin 16 is applied. This operation is performed on the four sides of the bare chip 11 and the resin 16 is applied around the bare chip 11. Subsequently, the resin 16 is similarly applied on and around the adjacent bare chip 11. In addition, when apply | coating the resin 16, you may use multiple cylinders instead of one.

  As described above, in this embodiment, the resin 16 is applied along the outer periphery of the bare chip 11. For this reason, the viscosity of the resin 16, the amount of the resin 16 applied to one side of the bare chip 11, the application time, and the like are adjusted as appropriate so that the resin 16 covers the wire 15 and the like satisfactorily. In addition, it is preferable that the light receiving portion 21 is formed in the center region of the bare chip 11 because it is easy to adjust the amount, time, and the like of the resin 16 applied to each side.

  Next, the substrate 12 on which all the sides of each bare chip 11 have been applied with the resin 16 is placed in a heating furnace, and the applied resin 16 is thermally cured.

  Next, the covering member 52 is removed, and the light receiving unit 21 is exposed as shown in FIG.

Next, in the dicing process, the substrate 12 on which the bare chip 11 is mounted is cut at a predetermined position along the dicing line d shown in FIG. 4G by using a dicing cutter, and the bare chip as shown in FIG. The optical semiconductor device 10 is separated by 11 units.
The optical semiconductor device 10 is manufactured from the above steps.

  In the above-described embodiment, the configuration in which the substrate 12 is cut after removing the covering member 52 has been described as an example. However, the covering member 52 can be removed after the substrate 12 is cut. By removing the covering member 52 after the dicing process, it is possible to protect the light receiving unit 21 from cutting waste generated in the dicing process.

Rather than mounting a plurality of bare chips on a single substrate and then cutting, a bare chip 11 provided with a covering member 52 is mounted on a substrate 12 formed in advance in a predetermined shape, followed by wire bonding and impermeability. You may make it perform the application | coating of the optical resin 16, and the removal process of the coating | coated member 52. FIG.

  According to the method for manufacturing an optical semiconductor device of the present embodiment, a resin-encapsulated resin that has been conventionally required can be obtained by forming a covering member on the light receiving surface and then sealing it with a light-impermeable resin. Since the process and the process of forming the light shielding film can be omitted, the process is simplified and the production efficiency is increased. In addition, since a mold or the like is unnecessary, cost reduction can be achieved. Further, by applying the resin from above using the covering member, the resin can be applied so as to challenge the light receiving portion, and the metal member such as the electrode pad can be well protected from the external environment.

(A) is a top view of the optical semiconductor device which concerns on embodiment of this invention, (b) is the sectional view on the AA line shown to Fig.1 (a). It is a figure explaining the manufacturing process of the optical semiconductor device which concerns on embodiment of this invention. It is a figure explaining the manufacturing process of the optical semiconductor device which concerns on embodiment of this invention. It is a figure explaining the manufacturing process of the optical semiconductor device which concerns on embodiment of this invention. It is a figure which shows the conventional optical semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Optical semiconductor device 11 Bare chip 12 Board | substrate 13 Die pad 14 Electrode terminal 15 Wire 16 Resin 21 Light-receiving part 22 Electrode pad 23 Signal processing circuit part

Claims (10)

A substrate on which electrode terminals are formed;
A bare chip mounted on the substrate and comprising an electrode pad and a semiconductor element having a light receiving portion or a light emitting portion;
A conductive member that electrically connects the electrode terminal and the electrode pad;
An optical semiconductor device further comprising an opaque resin that covers at least the conductive member and the electrode pad and is formed to challenge the light receiving portion or the light emitting portion of the bare chip.   2. The optical semiconductor device according to claim 1, wherein the bare chip is substantially rectangular, and the electrode pads are formed along each of two opposing sides of the bare chip.   2. The optical semiconductor device according to claim 1, wherein the bare chip is substantially rectangular, and the electrode pads are formed on an outer peripheral portion along the four sides of the bare chip.   4. The optical semiconductor device according to claim 1, wherein the light receiving portion or the light emitting portion is formed in a substantially central region of the bare chip. A covering member forming step of forming a covering member on the light receiving portion or the light emitting portion of the bare chip in which the light receiving portion or the light emitting portion and the electrode pad of the semiconductor element are formed;
A mounting step of mounting the bare chip on a substrate;
A connection step of electrically connecting the electrode pad formed on the bare chip and the electrode terminal formed on the substrate with a conductive member;
An application step of applying the light-impermeable resin so that at least the electrode pad and the conductive member are covered with the light-impermeable resin;
A covering member removing step for removing the covering member formed on the light receiving portion or the light emitting portion of the bare chip;
In the coating step, the resin is applied so as to challenge the light receiving portion or the light emitting portion of the bare chip. In the mounting step, a plurality of the bare chips are mounted in a matrix on the substrate,
6. The method of manufacturing an optical semiconductor device according to claim 5, further comprising a cutting step of cutting the substrate to obtain a plurality of the optical semiconductor devices.   6. The method of manufacturing an optical semiconductor device according to claim 5, wherein, in the mounting step, the bare chip is mounted on the substrate that has been cut for each of the optical semiconductor devices in advance.   8. The optical semiconductor device according to claim 5, wherein the bare chip has a substantially rectangular shape, and the electrode pad is formed along each of two opposing sides of the bare chip. 9. Manufacturing method.   8. The optical semiconductor according to claim 5, wherein the bare chip is substantially rectangular, and the electrode pads are formed on outer peripheral portions along the four sides of the bare chip, respectively. 9. Device manufacturing method.   10. The method of manufacturing an optical semiconductor device according to claim 5, wherein, in the application step, the resin is applied along an outer periphery of the bare chip. 11.

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