KR20030027017A - 집적형 트랜지스터 디바이스 - Google Patents

집적형 트랜지스터 디바이스 Download PDF

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Publication number
KR20030027017A
KR20030027017A KR10-2003-7001947A KR20037001947A KR20030027017A KR 20030027017 A KR20030027017 A KR 20030027017A KR 20037001947 A KR20037001947 A KR 20037001947A KR 20030027017 A KR20030027017 A KR 20030027017A
Authority
KR
South Korea
Prior art keywords
layer
compound semiconductor
gallium
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2003-7001947A
Other languages
English (en)
Korean (ko)
Inventor
월터 데이비드 4세 브래드독
Original Assignee
오세미 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/636,484 external-priority patent/US6936900B1/en
Application filed by 오세미 인코포레이티드 filed Critical 오세미 인코포레이티드
Publication of KR20030027017A publication Critical patent/KR20030027017A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
KR10-2003-7001947A 2000-08-10 2001-08-10 집적형 트랜지스터 디바이스 Ceased KR20030027017A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/636,484 2000-08-10
US09/636,484 US6936900B1 (en) 2000-05-04 2000-08-10 Integrated transistor devices
PCT/US2001/025150 WO2002015233A2 (en) 2000-08-10 2001-08-10 Integrated transistor devices

Publications (1)

Publication Number Publication Date
KR20030027017A true KR20030027017A (ko) 2003-04-03

Family

ID=24552107

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7001947A Ceased KR20030027017A (ko) 2000-08-10 2001-08-10 집적형 트랜지스터 디바이스

Country Status (5)

Country Link
EP (1) EP1312122A4 (https=)
JP (1) JP2004507081A (https=)
KR (1) KR20030027017A (https=)
AU (1) AU2001288239A1 (https=)
WO (1) WO2002015233A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796043B1 (ko) * 2004-01-23 2008-01-21 인터내쇼널 렉티파이어 코포레이션 증가형 모드 ⅲ-질화물 디바이스

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6756320B2 (en) * 2002-01-18 2004-06-29 Freescale Semiconductor, Inc. Method of forming article comprising an oxide layer on a GaAs-based semiconductor structure
WO2003063227A2 (en) * 2002-01-22 2003-07-31 Massachusetts Institute Of Technology A method of fabrication for iii-v semiconductor surface passivation
US7187045B2 (en) 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US7250627B2 (en) 2004-03-12 2007-07-31 Hewlett-Packard Development Company, L.P. Semiconductor device
JP7067702B2 (ja) * 2017-06-30 2022-05-16 国立研究開発法人物質・材料研究機構 窒化ガリウム系の半導体装置及びその製造方法
CN116072707B (zh) * 2023-02-08 2024-07-26 杭州合盛微电子有限公司 一种含稀土栅介质层的平面型SiC MOSFET及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962883A (en) * 1994-03-23 1999-10-05 Lucent Technologies Inc. Article comprising an oxide layer on a GaAs-based semiconductor body
US5665658A (en) * 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5945718A (en) * 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796043B1 (ko) * 2004-01-23 2008-01-21 인터내쇼널 렉티파이어 코포레이션 증가형 모드 ⅲ-질화물 디바이스

Also Published As

Publication number Publication date
JP2004507081A (ja) 2004-03-04
EP1312122A2 (en) 2003-05-21
EP1312122A4 (en) 2006-08-02
WO2002015233A3 (en) 2002-06-27
WO2002015233A2 (en) 2002-02-21
AU2001288239A1 (en) 2002-02-25

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