KR20030023127A - Thinner composition for rinsing photoresist - Google Patents

Thinner composition for rinsing photoresist Download PDF

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KR20030023127A
KR20030023127A KR1020010056108A KR20010056108A KR20030023127A KR 20030023127 A KR20030023127 A KR 20030023127A KR 1020010056108 A KR1020010056108 A KR 1020010056108A KR 20010056108 A KR20010056108 A KR 20010056108A KR 20030023127 A KR20030023127 A KR 20030023127A
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photosensitive resin
thinner
propylene glycol
thinner composition
monomethyl ether
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KR1020010056108A
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Korean (ko)
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KR100474098B1 (en
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최호성
김지홍
김태근
여상혁
박해성
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주식회사 덕성
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Priority to KR10-2001-0056108A priority Critical patent/KR100474098B1/en
Priority to TW090126532A priority patent/TW556055B/en
Priority to CN01134716A priority patent/CN1403561A/en
Publication of KR20030023127A publication Critical patent/KR20030023127A/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0048Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Detergent Compositions (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: A thinner composition for a cleansing a photosensitive resin is provided, which exhibits an excellent solubility to a photosensitive resin, and the improved stability owing to a low vapor pressure, a low volatility and a low toxicity. CONSTITUTION: The thinner composition comprises 10-90 wt% of propylene glycol monomethyl ether propionate; and at least one co-solvent. Preferably the co-solvent is selected from the group consisting of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, n-butyl acetate, ethyl lactate, ethyl ethoxypropionate, methyl methoxypropionate, 2-heptanone and γ-butyrolactone.

Description

감광성수지 세정용 시너 조성물{THINNER COMPOSITION FOR RINSING PHOTORESIST}Thinner composition for cleaning photosensitive resin {THINNER COMPOSITION FOR RINSING PHOTORESIST}

본 발명은 반도체 소자 및 평판인쇄(lithography) 등의 제조공정에 사용되는 감광성수지 세정용 시너(thinner) 조성물, 특히 프로필렌글리콜모노메틸에테르프로피오네이트에 하나 이상의 공용제를 혼합한 시너 조성물에 관한 것으로, 이러한 시너 조성물은 감광성수지에 대한 용해성이 우수하고, 증기압이 낮고, 저휘발성, 저독성을 갖으며, 불필요한 감광막의 제거에 있어 우수한 효과를 발휘한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to thinner compositions for cleaning photosensitive resins used in manufacturing processes, such as semiconductor devices and lithography, particularly thinner compositions in which at least one common agent is mixed with propylene glycol monomethyl ether propionate. The thinner composition is excellent in solubility in photosensitive resins, has low vapor pressure, low volatility, low toxicity, and exhibits excellent effects in removing unnecessary photoresist.

일반적으로 반도체 집적회로 또는 플랫판넬디스플레이(Flat Panel Display, FPD) 회로는 극히 미세한 구조로 이루어져 있으며, 많은 단계의 공정을 거쳐 제조된다. 이와 같은 미세구조 회로는 기판 상에 형성된 산화막과 같은 절연막 또는 Al 합금막과 같은 도전성 금속막에 감광성수지를 균일하게 도포시키고, 상기 감광성수지를 노광/현상하여 소정의 패턴을 형성시킨 후, 소정 패턴화된 감광성수지를 마스크로 사용하여 상기 절연막 또는 도전성 금속막을 에칭함으로써 기판에 상기 감광성수지의 패턴을 전사시킨다. 마지막으로 상기 감광성수지 패턴을 박리액을 사용하여 제거하게 된다. 이러한 제조 공정 중 기판 위에 감광성수지를 도포한 후 회전시킴으로써 원심력에 의하여 균일한 도포막을 형성하게 되는데, 이를 '회전도포공정'이라 한다. 이러한 도포공정시 기판 가장자리 부위와 후면 부위에 원심력에 의한 입자(particle) 형태의 불필요한 잔류 감광성수지가 존재하게 된다. 이에 따라 상기 도포공정 다음의 공정에서, 상기 잔류된 입자형 감광성수지는 미세구조 회로가 노광되는 과정에서 초점불량(defocus), 산란 등의 원인으로 작용하여 전체 공정의 수율을 저하시키는 원인을 초래하게 된다.In general, a semiconductor integrated circuit or a flat panel display (FPD) circuit has an extremely fine structure and is manufactured through many steps. Such a microstructure circuit is formed by uniformly applying a photosensitive resin to an insulating film such as an oxide film formed on a substrate or a conductive metal film such as an Al alloy film, exposing / developing the photosensitive resin to form a predetermined pattern, and then The pattern of the photosensitive resin is transferred to the substrate by etching the insulating film or the conductive metal film using the photosensitive resin as a mask. Finally, the photosensitive resin pattern is removed using a stripping solution. During the manufacturing process, the photosensitive resin is coated on the substrate and then rotated to form a uniform coating film by centrifugal force, which is referred to as a 'rotating coating process'. In such an application process, unnecessary residual photosensitive resin in the form of particles due to centrifugal force exists at the edge portion and the rear portion of the substrate. Accordingly, in the process subsequent to the coating process, the remaining particulate photosensitive resin acts as a cause of defocus, scattering, etc. in the process of exposing the microstructure circuit, causing a cause of lowering the yield of the entire process. do.

이러한 잔류 감광성수지를 제거하기 위하여 기판 가장자리 부위와 후면 부위에 감광막 제거장치(Edge Bead Remover, EBR)를 설치되는데, 이 장치의 노즐을 통하여 세정용 시너(thinner) 조성물을 분사하여 상기 잔류 감광성수지를 제거하게 된다. 이러한 시너 조성물로서의 성능을 결정짓는 요소로는 용해속도, 휘발성, 점도, 감광막제거 경계면의 선형도(linearity)를 들 수 있다.In order to remove the residual photosensitive resin, an edge bead remover (EBR) is installed at the edges and rear portions of the substrate, and the residual photosensitive resin is sprayed by spraying a cleaning thinner composition through the nozzle of the apparatus. Will be removed. Factors that determine the performance as such a thinner composition include dissolution rate, volatility, viscosity, and linearity of the photoresist removal interface.

상기 시너의 성능결정 요소를 구체화시키면 다음과 같다.The performance determining element of the thinner is specified as follows.

용해속도Dissolution rate

용해속도는 감광성수지를 용해/제거하는 중요한 요소의 하나로, 감광막제거 경계면의 선형도에 큰 영향을 끼친다. 즉, 휘발속도에 비해 상대적으로 용해속도가 너무 낮은 경우에는 기판에 도포된 감광성수지에서 테일링(tailing)이라 불리우는 부분 용해된 감광성수지 잔류물(photoresist tail)의 흐름현상이 나타날 수 있으며, 반대로 휘발속도에 비해 용해속도가 너무 높은 경우에는 기판에 도포된 감광성수지의 린스공정에서 감광성수지 어택(photoresist attack)이라 불리우는 감광성수지 과침식현상이 나타날 수 있다. 이러한 감광성수지에 대한 테일링이나 어택현상은 후속공정에서 불량의 원인으로 작용하게 된다. 따라서 감광성수지 세정용 시너는 적절한 용해속도가 요구된다.The dissolution rate is an important factor for dissolving / removing the photosensitive resin and greatly affects the linearity of the photoresist removal interface. In other words, if the dissolution rate is too low relative to the volatilization rate, the flow phenomenon of partially dissolved photoresist tail called tailing may occur in the photosensitive resin applied to the substrate. In contrast, when the dissolution rate is too high, a photoresist over erosion phenomenon called a photoresist attack may occur in the rinse process of the photosensitive resin applied to the substrate. The tailing or attack phenomenon of the photosensitive resin is a cause of failure in the subsequent process. Therefore, the thinner for cleaning photosensitive resin requires an appropriate dissolution rate.

휘발성volatility

휘발성은 감광성수지를 제거하고 난 후, 시너가 얼마나 쉽게 휘발하여 기판의 표면에 잔류하지 않느냐에 관한 것으로, 휘발성이 너무 낮을 경우 시너가 휘발하지 못하고 잔류하여 감광막제거 경계면에 테일링 현상을 유도할 뿐 아니라 후속 공정에서 방해입자로 작용하여 제조공정의 생산성을 저하시키는 문제점이 발생시킬 수 있다. 또한, 휘발성이 너무 높을 경우에는 기판이 급속히 냉각되어 도포되는 감광성수지에서 경계둑(scum)이 형성되는 현상과 감광막 제거장치(Edge Bead Remover, EBR)의 노즐을 통한 시너의 분사시 감광성수지를 완전히 용해/제거하지 못하고 휘발되는 문제점이 발생된다. 또한 취급과정에서 대기 중으로 휘발되어 청정실의 오염, 폭발 위험 등의 문제를 야기 시킬 수 있다.Volatility refers to how easily the thinner volatilizes and remains on the surface of the substrate after removing the photosensitive resin.If the volatility is too low, the thinner does not volatilize and induces a tailing phenomenon on the photoresist removal interface. In the subsequent process, it may cause a problem of acting as the interfering particles to reduce the productivity of the manufacturing process. In addition, when the volatility is too high, a phenomenon is formed in the photosensitive resin to which the substrate is rapidly cooled and applied, and when the thinner is sprayed through the nozzle of the edge bead remover (EBR), the photosensitive resin is completely removed. There is a problem that volatilization fails to dissolve / remove. It can also be volatilized into the atmosphere during handling, causing problems such as contamination of the clean room and the risk of explosion.

점도Viscosity

시너의 점도는 감광막 제거장치의 노즐을 통한 시너의 분사시 고려해야 할 요소로, 점도가 너무 높을 경우 노즐을 통한 분사시에 분사압이 너무 높아질 수 있으며 이로 인해 시너의 사용량이 불필요하게 증가되어 경제성을 떨어뜨리게 된다. 또한 시너의 점도가 너무 낮을 경우 감광성수지가 감광막제거 경계면에 집중되지 못하여 불량을 유발할 수 있다.The viscosity of the thinner is a factor to be considered when spraying thinner through the nozzle of the photoresist removing device. If the viscosity is too high, the injection pressure may be too high when spraying through the nozzle. Dropped. In addition, when the viscosity of the thinner is too low, the photosensitive resin may not be concentrated on the photoresist stripping interface, which may cause a defect.

선형도Linearity

감광막 제거 경계면의 선형도는 상기 용해속도, 휘발성, 점도 모두와 관련되는 요소로, 용해속도, 휘발성 및 점도가 적절히 조화되어야 깨끗한 경계면의 선형도를 얻을 수 있다. 그러므로 선형도는 감광성수지 세정용 시너 조성물의 성능을 판단하는 가장 큰 요소라 할 수 있다.The linearity of the photoresist removal interface is a factor related to all of the dissolution rate, volatility, and viscosity, and a clean interface may be obtained only when the dissolution rate, volatility, and viscosity are properly balanced. Therefore, the linearity can be said to be the biggest factor in determining the performance of the thinner composition for cleaning the photosensitive resin.

한편, 종래 사용되는 감광성수지 세정용 시너 조성물들을 살펴보면 다음과 같다.On the other hand, looking at the thinner compositions for cleaning the conventional photosensitive resin is as follows.

프로필렌글리콜에테르, 프로필렌글리콜에테르아세테이트와 같은 에테르류; 에테르아세테이트류; 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 2-헵탄온, 사이클로헥사논와 같은 케톤류; 및 메틸락테이트, 에틸락테이트, 메틸아세테이트, 에틸아세테이트, 부틸 아세테이트와 같은 에스테르류를 이용하는 시너 조성물(일본특허공개공보 소63-69563호): 프로필렌글리콜메틸에테르아세테이트(propyleneglycol monomethylether acetate, PGMEA)를 이용하는 시너 조성물(일본특허공개공보 평4-49938호):및 알킬알콕시프로피오네이트를 사용하는 시너 조성물(일본특허공개공보 평4-42523호) 등이 공지되어 있다.Ethers such as propylene glycol ether and propylene glycol ether acetate; Ether acetates; Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, 2-heptanone and cyclohexanone; And thinner compositions using esters such as methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, and butyl acetate (Japanese Patent Laid-Open No. 63-69563): propyleneglycol monomethylether acetate (PGMEA) Known thinner compositions (Japanese Patent Laid-Open Publication No. Hei 4-49938) and thinner compositions using alkylalkoxypropionate (Japanese Patent Laid-Open Publication No. Hei 4-42523) and the like are known.

이러한 종래의 시너 조성물은 주로 노말부틸아세테이트(n-butyl acetate, n-BA), 에틸렌글리콜모노에틸에테르아세테이트(ethyleneglycol monoethylether acetate, ECA), 프로필렌글리콜모노메틸에테르아세테이트(propyleneglycol monomethylether acetate, PGMEA) 및 에틸 락테이트( ethyl lactate, EL) 등의 단일 용제가 널리 사용되어 왔으나, 이러한 단일 용제는 낮은 용해속도, 높은 휘발성, 높은 점도 등에서 문제가 있었다.These conventional thinner compositions are mainly normal butyl acetate (n-BA), ethylene glycol monoethyl ether acetate (ECA), propylene glycol monomethyl ether acetate (PGMEA) and ethyl Although single solvents such as lactate (ethyl lactate, EL) have been widely used, such single solvents have problems in low dissolution rate, high volatility, and high viscosity.

이러한 단일 조성물들의 단점을 보완하기 위하여 혼합용제가 개발되었는데, 예를 들면, 프로필렌글리콜알킬에테르와 3-알콕시프로피온산알킬류의 혼합물로 이루어진 시너 조성물(일본특허공개공보 평7-146562호): 프로필렌글리콜알킬에테르, 부틸 아세테이트 및 에틸락테이트의 혼합물(일본특허공개공보 평7-128867호) 등이 있다.In order to compensate for the shortcomings of these single compositions, a mixed solvent has been developed. For example, a thinner composition comprising a mixture of propylene glycol alkyl ether and alkyl 3-alkoxypropionate (JP-A-7-146562): propylene glycol And mixtures of alkyl ethers, butyl acetate and ethyl lactate (JP-A-7-128867).

또한 미국특허 제4,983,490호에는 프로필렌글리콜알킬에테르아세테이트와 프로필렌글리콜알킬에테르의 혼합용제인 시너 조성물이 공지되어 있는데, 상기 조성물은 나쁜 냄새로 인해 작업자들에게 불쾌감과 거부감을 일으킴과 아울러, 유독성으로 인하여 건강을 해칠 위험이 있다.In addition, U.S. Patent No. 4,983,490 discloses a thinner composition which is a mixed solvent of propylene glycol alkyl ether acetate and propylene glycol alkyl ether. There is a risk of harm.

더구나 종래의 혼합용제들은 용해성, 휘발성, 유독성, 경계면의 선형도, 세정효과에서 문제가 되고 있으며, 고집적화 되어가는 반도체 소자류의 제조에 적용하기에는 많은 어려움이 있다.Moreover, conventional mixed solvents are problematic in solubility, volatility, toxicity, interface linearity, and cleaning effects, and there are many difficulties in applying them to the manufacture of semiconductor devices that are becoming highly integrated.

본 발명은 상기와 같은 종래의 감광성수지 세정용 시너 및 혼합용제에서 제기된 문제점을 해결하기 위하여 안출된 것으로서, 본 발명은The present invention has been made to solve the problems posed by the conventional photosensitive resin cleaning thinner and a mixed solvent as described above, the present invention

첫째, 감광성수지의 세정시 용해성이 우수하며,First, it has excellent solubility in washing photosensitive resin,

둘째, 증기압이 낮고 저독성이어서 청정실의 오염 및 폭발 위험성이 없고 작업자의 건강을 해칠 위험이 없으며,Secondly, it has low vapor pressure and low toxicity, so there is no risk of contamination and explosion in the clean room, and there is no danger of harming worker's health,

셋째, 점도가 낮아 노즐을 통한 분사시에 분사압을 낮출 수 있으며, 이로 인해 시너의 사용량을 감소시켜 경제성을 향상시킬 수 있고,Third, the lower the viscosity can lower the injection pressure when spraying through the nozzle, thereby reducing the amount of thinner used to improve the economics,

넷째, 감광막 제거장치의 노즐을 통한 분사시 감광성수지 경계면의 깨끗한 선형도를 나타내는 감광성수지 세정용 시너 조성물을 제공하는 것을 목적으로 한다.Fourthly, an object of the present invention is to provide a thinner composition for cleaning photosensitive resin which exhibits a clean linearity of the photosensitive resin interface when sprayed through the nozzle of the photosensitive film removing apparatus.

도 1 내지 도 9는 본 발명에 따른 감광성 수지 세정용 시너 조성물의 각 실시예 및 비교예와 관련하여 선형도의 정도를 검사한 광학현미경 사진이다.1 to 9 are optical micrographs inspecting the degree of linearity with respect to each embodiment and comparative example of the thinner composition for cleaning photosensitive resin according to the present invention.

상기와 같은 목적을 달성하기 위하여 본 발명에 따른 감광성수지 세정용 시너 조성물은 10 내지 90 중량%의 프로필렌글리콜모노메틸에테르프로피오네이트에 하나 이상의 공용제를 혼합한 시너 조성물을 제공한다.In order to achieve the above object, the thinner composition for cleaning a photosensitive resin according to the present invention provides a thinner composition in which at least one common agent is mixed with 10 to 90% by weight of propylene glycol monomethyl ether propionate.

바람직하게는 상기 공용제는 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노메틸에테르아세테이트, 노말부틸아세테이트, 에틸락테이트, 에틸에톡시프로피오네이트, 메틸메톡시프로피오네이트, 2-헵탄온, 감마부티로락톤 등으로 이루어진 군으로부터 선택되는 것이 적당하다.Preferably the co-agent is propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, normal butyl acetate, ethyl lactate, ethyl ethoxy propionate, methyl methoxy propionate, 2-heptanone, gamma butyro Suitable is selected from the group consisting of lactones and the like.

보다 바람직하게는 상기 시너 조성물은 프로필렌글리콜모노메틸에테르프로피오네이트 10 내지 50 중량%와 1 또는 2개의 상기 공용제를 혼합한 2성분계 또는 3성분계 시너 조성물인 것이 좋다.More preferably, the thinner composition is a two-component or three-component thinner composition in which 10 to 50% by weight of propylene glycol monomethyl ether propionate and one or two of the coagents are mixed.

본 발명에 의한 시너 조성물은 감광성수지에 대한 용해성이 우수하고, 적당한 휘발성, 저독성을 갖으므로, 반도체 소자 및 평판인쇄(lithography) 등의 제조공정 중 감광막의 회전도포공정에서 기판의 가장자리 부위와 후면부위에 발생되는 불필요한 감광막을 제거하는데 우수한 효과를 발휘하고, 가장자리 부위의 불필요한 감광막 제거장치(Edge Bead Remover, EBR)에서, 상기 장치의 노즐을 통한 본 발명의 시너 조성물 분사시 감광막의 경계면에 대하여 깨끗한 선형도(linearity)를 얻을 수 있다.Since the thinner composition according to the present invention has excellent solubility in photosensitive resin, moderate volatility, and low toxicity, the thinner composition may be applied to the edge portion and the rear portion of the substrate in the rotation coating process of the photosensitive film during the manufacturing process of semiconductor devices and lithography. It exerts an excellent effect in removing the unnecessary photoresist film generated, and in the unnecessary edge bead remover (EBR) of the edge portion, clean linearity with respect to the interface of the photoresist film when spraying the thinner composition of the present invention through the nozzle of the device (linearity) can be obtained.

따라서, 본 발명에 따른 감광성수지 세정용 시너 조성물을 사용할 경우, 에지비드린스(Edge Bead Rinse) 처리 특성의 증대, 감광성수지의 처리단면 개선과 같은 효과로 인하여 반도체소자 및 평판인쇄 공정에서 생산성을 향상시킬 수 있다.Therefore, when the thinner composition for cleaning the photosensitive resin according to the present invention is used, productivity is improved in semiconductor devices and plate printing processes due to effects such as an increase in edge bead rinse treatment characteristics and an improved cross section of the photosensitive resin. You can.

본 발명의 시너 조성물 중 상기 프로필렌글리콜모노메틸에테르프로피오네이트는 각종 수지에 대한 용해도가 우수하고 점도가 낮다. 또한 공기중에 노출될 경우에도 안정성이 높고 휘발성이 낮다. 또한 LD50(구강)이 12g/kg으로써 독성과 냄새로 인한 불쾌감이 거의 없어 환경 친화적이라 할 수 있다. 그 물리적 성질은 끓는점 160℃, 인화점(클로즈드 컵방식으로 측정) 56℃, 점도(25℃에서) 1.18 cps, 증기압(20℃에서) 0.9mmHg, 용해도 파라미터가 4.8 이다.The propylene glycol monomethyl ether propionate in the thinner composition of the present invention has excellent solubility in various resins and low viscosity. It also has high stability and low volatility when exposed to air. In addition, LD50 (oral) is 12g / kg, there is little discomfort due to toxicity and odor, which is environmentally friendly. Its physical properties include boiling point 160 ° C, flash point (measured by closed cup method) 56 ° C, viscosity (at 25 ° C) 1.18 cps, vapor pressure (at 20 ° C) 0.9mmHg, and solubility parameter 4.8.

그러나 상기 프로필렌글리콜모노메틸에테르프로피오네이트만을 감광성수지 세정용 시너로 사용할 경우에는 높은 용해속도에 비해 휘발성이 낮다는 문제점이 있으며, 또한 낮은 점도로 인해 감광막제거시 경계면에 집중되지 못하여 불량을 유발할 수 있다는 문제점이 있다.However, when only the propylene glycol monomethyl ether propionate is used as a thinner for cleaning the photosensitive resin, there is a problem that the volatility is low compared to the high dissolution rate. Also, due to the low viscosity, the propylene glycol monomethyl ether propionate cannot be concentrated at the interface when removing the photoresist film, thereby causing a defect. There is a problem.

그러므로 프로필렌글리콜모노메틸에테르프로피오네이트를 감광성수지 세정용 시너로 단독 사용할 경우의 단점을 보완할 수 있는 공용제를 혼합하여 시너 조성물을 제조하는 것이 바람직하다.Therefore, it is preferable to prepare a thinner composition by mixing a common agent that can compensate for the disadvantage of using propylene glycol monomethyl ether propionate alone as a thinner for washing photosensitive resin.

상기와 같이 프로필렌글리콜모노메틸에테르프로피오네이트의 단점을 제거하기 위하여, 공용제로 사용될 수 있는 물질을 예시하면 다음과 같다.In order to eliminate the disadvantages of propylene glycol monomethyl ether propionate as described above, exemplified as a material that can be used as a co-agent.

먼저, 본 발명의 시너 조성물에 혼합용 공용제로 쓰이는 프로필렌글리콜모노메틸에테르는 감광성수지 중 페놀수지와 광활성물질에 대하여 용해성이 우수하며, 독성을 나타내는 수치인 LD50(구강)이 4.4 g/kg으로, 인체 흡입시 프로필렌글리콜과 알코올로 빠르게 분해되어 독성이 적으므로 작업자에게도 안전하다. 그러나 높은 증기압으로 인해 휘발성이 높아 장시간 사용시 나쁜 냄새로 작업자들에게 불쾌감을 주며, 점도가 높아 단독 사용에 어려움이 있다. 물리적 성질은 끓는점 132.8℃, 인화점(클로즈드 컵방식으로 측정) 32℃, 점도(25℃에서) 1.86 cps, 증기압(25℃에서) 12.6mmHg, 표면장력 26.5 dyne/㎠, 용해도 파라미터가 10.4 이다.First, propylene glycol monomethyl ether, which is used as a mixing agent in the thinner composition of the present invention, has excellent solubility in phenolic resins and photoactive substances in photosensitive resins, and LD50 (oral), which shows toxicity, is 4.4 g / kg, When inhaled by humans, it is rapidly decomposed into propylene glycol and alcohol, so it is safe for workers. However, due to the high vapor pressure, high volatility gives workers unpleasant odor due to bad smell when used for a long time, and high viscosity makes it difficult to use alone. Physical properties are boiling point 132.8 ° C, flash point (measured by closed cup method) 32 ° C, viscosity (at 25 ° C) 1.86 cps, vapor pressure (at 25 ° C) 12.6mmHg, surface tension 26.5 dyne / cm 2, solubility parameter 10.4.

그 외, 본 발명에 공용제로 쓰이는 프로필렌글리콜모노메틸에테르아세테이트, 노말부틸아세테이트, 에틸락테이트, 에틸에톡시프로피오네이트, 메틸메톡시프로피오네이트, 2-헵탄온, 감마부티로락톤 등도 상기 프로필렌글리콜모노메틸에테르와 같은 문제점들로 인해 단독사용이 어렵다.In addition, propylene glycol monomethyl ether acetate, normal butyl acetate, ethyl lactate, ethyl ethoxy propionate, methyl methoxy propionate, 2-heptanone, gamma butyrolactone, etc., which are used as co-agents in the present invention, are also propylene. Problems such as glycol monomethyl ether are difficult to use alone.

따라서 본 발명에서는 상기 프로필렌글리콜모노메틸에테르프로피오네이트를 주성분으로 하고, 여기에 상기 공용제가 하나 이상 일정비율로 혼합되어 제조되고, 이러한 시너 조성물은 감광성수지에 대한 높은 용해성능, 적당한 휘발성 및 점도를 유지, 감광성수지 제거 경계면의 선형도에 대해 우수한 특성을 발휘한다. 또한 상기 혼합된 조성물은 환경적 측면에서 냄새로 인한 불쾌감을 줄일 수 있으며, 안정성 측면에서는 저독성/저인화점으로 인하여 작업자들의 건강을 해칠 위험과 폭발위험이 거의 없다.Therefore, in the present invention, the propylene glycol monomethyl ether propionate is used as a main component, and the co-agent is prepared by mixing at least one ratio. The thinner composition has high solubility in photosensitive resin, moderate volatility, and viscosity. Excellent properties for the linearity of the oil-retaining and photosensitive resin removal interface. In addition, the mixed composition can reduce the discomfort caused by the smell in terms of the environment, there is little risk of harm to the health and explosion of workers due to low toxicity / low flash point in terms of stability.

이하, 본 발명에 따른 감광성수지 세정용 시너 조성물은 다음 실시예를 통하여 보다 명확하게 이해될 수 있다.Hereinafter, the thinner composition for cleaning the photosensitive resin according to the present invention may be more clearly understood through the following examples.

[실시예]EXAMPLE

1. 시너 조성물의 제조1. Preparation of thinner composition

프로필렌글리콜모노메틸에테르프로피오네이트와 공용제가 일정 비율로 혼합되어 이루어진 시너 조성물을 그 조성비를 다르게 하여 실시예 1 내지 28과 같이 제조하고, 비교예 조성물 1 및 2를 제조하여, 다음 <표 1>에 나타내었다A thinner composition obtained by mixing propylene glycol monomethyl ether propionate and a co-agent in a predetermined ratio was prepared in Examples 1 to 28 with different composition ratios, and Comparative Compositions 1 and 2 were prepared. Indicated on

[표 1]각 실시예 및 비교예의 시너 조성물의 제조(단위: 중량%) Table 1 Preparation of Thinner Compositions of Each Example and Comparative Example (Unit: Weight%)

구 분division 각 시너의 조성비The composition ratio of each thinner 구 분division 각 시너의 조성비The composition ratio of each thinner 실시예 1Example 1 PMP:PGME = 90:10PMP: PGME = 90:10 실시예 16Example 16 PMP:MMP:EL = 35:50:15PMP: MMP: EL = 35:50:15 ˝ 22 PMP:PGME = 80:20PMP: PGME = 80:20 ˝ 17˝ 17 PMP:MMP:EL = 55:30:15PMP: MMP: EL = 55:30:15 ˝ 3˝ 3 PMP:PGME = 70:30PMP: PGME = 70:30 ˝ 18˝ 18 PMP:PGME:MAKN = 10:70:20PMP: PGME: MAKN = 10:70:20 ˝ 44 PMP:PGME = 50:50PMP: PGME = 50:50 ˝ 19˝ 19 PMP:PGME:MAKN = 10:80:10PMP: PGME: MAKN = 10:80:10 ˝ 5˝ 5 PMP:PGME = 30:70PMP: PGME = 30:70 ˝ 20˝ 20 PMP:PGME:nBA = 10:80:10PMP: PGME: nBA = 10:80:10 ˝ 6˝ 6 PMP:PGME = 20:80PMP: PGME = 20:80 ˝ 21˝ 21 PMP:PGME:nBA = 30:60:10PMP: PGME: nBA = 30:60:10 ˝ 7˝ 7 PMP:PGME = 10:90PMP: PGME = 10:90 ˝ 22˝ 22 PMP:PGME:nBA = 50:40:10PMP: PGME: nBA = 50:40:10 ˝ 88 PMP:EL = 25:75PMP: EL = 25:75 ˝ 23˝ 23 PMP:EA:GBL = 30:65:5PMP: EA: GBL = 30: 65: 5 ˝ 9˝ 9 PMP:EL = 75:25PMP: EL = 75:25 ˝ 24˝ 24 PMP:EA:GBL = 60:35:5PMP: EA: GBL = 60: 35: 5 ˝ 10˝ 10 PMP:MMP = 75:25PMP: MMP = 75:25 ˝ 25˝ 25 PMP:EA:GBL = 80:15:5PMP: EA: GBL = 80: 15: 5 ˝ 11˝ 11 PMP:MMP = 25:75PMP: MMP = 25:75 ˝ 26˝ 26 PMP:PGMEA:EA = 10:10:80PMP: PGMEA: EA = 10:10:80 ˝ 12˝ 12 PMP:EEP:EL = 20:60:20PMP: EEP: EL = 20:60:20 ˝ 27˝ 27 PMP:PGMEA:EA = 40:10:50PMP: PGMEA: EA = 40:10:50 ˝ 13˝ 13 PMP:EEP:EL = 40:40:20PMP: EEP: EL = 40:40:20 ˝ 28˝ 28 PMP:PGMEA:EA = 60:10:30PMP: PGMEA: EA = 60:10:30 ˝ 14˝ 14 PMP:EEP:EL = 60:20:20PMP: EEP: EL = 60:20:20 비교예 1Comparative Example 1 EL:EEP =EL: EEP = 20:8020:80 ˝ 15˝ 15 PMP:MMP:EL = 25:60:15PMP: MMP: EL = 25:60:15 ˝ 22 EL:PGME =EL: PGME = 50:5050:50 여기서,PMP : 프로필렌글리콜모노메틸에테르프로피오네이트PGME : 프로필렌글리콜모노메틸에테르EL : 에틸락테이트GBL : 감마부티로락톤MMP : 메틸메톡시프로피오네이트EEP : 에틸에톡시프로피오네이트nBA : 노말부틸아세테이트EA : 에틸아세테이트PGMEA : 프로필렌글리콜모노메틸에테르아세테이트MAKN : 2-헵탄온Where PMP: propylene glycol monomethyl ether propionate PGME: propylene glycol monomethyl ether EL: ethyl lactate GBL: gamma butyrolactone MMP: methyl methoxy propionate EEP: ethyl ethoxy propionate nBA: normal butyl Acetate EA: ethyl acetate PGMEA: propylene glycol monomethyl ether acetate MAKN: 2-heptanone

2. 포지티브형 감광성수지에 대한 시너 조성물의 용해속도 평가2. Evaluation of Dissolution Rate of Thinner Composition for Positive Photosensitive Resins

일반적으로 사용되고 있는 감광성수지 조성물 중 g-line 포지티브형 감광성수지 조성물을 4 inch 산화 실리콘 웨이퍼에 도포하고, 110℃에서 90초간 소프트 베이크한 후, 1㎝ ×1㎝ 시편으로 잘라 실온에서 상기 <표 1>의 각 시너 용액에 침전시켜 감광성수지가 완전 제거되는 시간을 측정하고, 그 결과인 용해속도를 아래 <표 2>에 나타내었다.Among the photosensitive resin compositions generally used, a g-line positive photosensitive resin composition was applied to a 4 inch silicon oxide wafer, soft baked at 110 ° C. for 90 seconds, and then cut into 1 cm × 1 cm specimens at room temperature. Precipitated in each thinner solution of>, the time the photosensitive resin is completely removed was measured, and the resulting dissolution rate is shown in Table 2 below.

[표 2]감광성수지에 대한 각 시너 조성물의 용해속도 평가 (단위: Å/sec) [Table 2] Evaluation of dissolution rate of each thinner composition for the photosensitive resin (unit: Å / sec)

구 분division 용 해 속 도Melting Speed 구 분division 용 해 속 도Melting Speed 실시예 1Example 1 72007200 실시예 16Example 16 1035810358 ˝ 22 75687568 ˝ 17˝ 17 92389238 ˝ 3˝ 3 86258625 ˝ 18˝ 18 1375613756 ˝ 44 1078110781 ˝ 19˝ 19 1482014820 ˝ 5˝ 5 1277812778 ˝ 20˝ 20 1453214532 ˝ 6˝ 6 1368713687 ˝ 21˝ 21 1245612456 ˝ 7˝ 7 1568215682 ˝ 22˝ 22 1022010220 ˝ 88 1083510835 ˝ 23˝ 23 1520215202 ˝ 9˝ 9 84238423 ˝ 24˝ 24 1046210462 ˝ 10˝ 10 92329232 ˝ 25˝ 25 92309230 ˝ 11˝ 11 1233012330 ˝ 26˝ 26 1443814438 ˝ 12˝ 12 1233012330 ˝ 27˝ 27 1189711897 ˝ 13˝ 13 94569456 ˝ 28˝ 28 84328432 ˝ 14˝ 14 87208720 비교예 1Comparative Example 1 99459945 ˝ 15˝ 15 1256312563 ˝ 22 82228222

3. 각 시너 조성물의 휘발성 평가3. Volatile Evaluation of Each Thinner Composition

각 시너 조성물들의 휘발성을 측정하기 위하여 스핀 코터(Spin Coater, 마이더스社)를 사용하여 4 inch 웨이퍼 위에 각 시너 조성물 1mL를 떨어뜨린 후, 1,000, 2,000, 3,000rpm으로 회전속도를 변화시키면서 웨이퍼의 가장자리 부위까지 시너가 완전히 휘발되는 시간을 측정하였으며, 그 결과를 아래 <표 3>에 나타내었다.To measure the volatility of each of the thinner compositions, 1 mL of each thinner composition was dropped onto a 4 inch wafer using a spin coater (Miders), and then the edge of the wafer was changed at a rotation speed of 1,000, 2,000, or 3,000 rpm. The time taken for the thinner to be completely volatilized was measured, and the results are shown in Table 3 below.

[표 3]각 시너 조성물의 휘발성 평가 (단위: sec) TABLE 3 Volatile Evaluation of Each Thinner Composition (Unit: sec)

구 분division 휘발시간Volatility time 구 분division 휘발시간Volatility time 1000rpm1000 rpm 2000rpm2000 rpm 3000rpm3000 rpm 1000rpm1000 rpm 2000rpm2000 rpm 3000rpm3000 rpm 실시예 1Example 1 26.326.3 13.113.1 9.29.2 ˝ 16˝ 16 23.623.6 11.711.7 8.28.2 ˝ 22 25.125.1 12.512.5 8.88.8 ˝ 17˝ 17 25.825.8 12.712.7 8.38.3 ˝ 3˝ 3 24.224.2 12.012.0 8.58.5 ˝ 18˝ 18 11.611.6 6.16.1 4.64.6 ˝ 44 22.122.1 11.111.1 8.18.1 ˝ 19˝ 19 11.111.1 6.06.0 4.54.5 ˝ 5˝ 5 20.120.1 10.110.1 7.17.1 ˝ 20˝ 20 17.117.1 8.68.6 6.46.4 ˝ 6˝ 6 19.119.1 9.69.6 6.86.8 ˝ 21˝ 21 19.219.2 9.69.6 6.86.8 ˝ 7˝ 7 18.018.0 9.09.0 6.46.4 ˝ 22˝ 22 21.221.2 10.610.6 7.57.5 ˝ 88 34.934.9 16.416.4 11.211.2 ˝ 23˝ 23 16.216.2 7.97.9 5.65.6 ˝ 9˝ 9 30.230.2 14.814.8 10.410.4 ˝ 24˝ 24 23.423.4 11.511.5 8.08.0 ˝ 10˝ 10 24.624.6 12.212.2 8.68.6 ˝ 25˝ 25 28.228.2 13.813.8 9.79.7 ˝ 11˝ 11 19.219.2 9.79.7 6.76.7 ˝ 26˝ 26 7.47.4 3.63.6 2.72.7 ˝ 12˝ 12 34.834.8 16.916.9 11.811.8 ˝ 27˝ 27 14.514.5 7.27.2 5.15.1 ˝ 13˝ 13 33.133.1 16.116.1 11.311.3 ˝ 28˝ 28 19.319.3 9.59.5 6.86.8 ˝ 14˝ 14 31.331.3 15.315.3 10.710.7 비교예 1Comparative Example 1 36.036.0 17.417.4 12.112.1 ˝ 15˝ 15 22.622.6 11.211.2 7.87.8 ˝ 22 48.248.2 23.823.8 11.711.7

4. 각 시너 조성물의 선형도 평가4. Evaluation of linearity of each thinner composition

각 시너 조성물들을 이용하여 가장자리 부위의 불필요한 감광성수지를 제거하고, 그 경계면의 선형도를 측정였다. 스핀 코터(Spin Coater, 마이더스社)를 사용하여 4 inch 웨이퍼 위에 감광성수지를 1500rpm으로 도포한 후, EBR의 노즐 압력 1.0kg.f/㎝, 시너 유량 12mL/min, 스핀 코터 2,000rpm의 조건에서 감광성수지를 제거한 후, 광학현미경을 이용하여 처리단면을 측정하였고, 그 결과를 아래 <표 4>와 도 1 내지 도 9에 나타내었다.Each of the thinner compositions was used to remove unnecessary photosensitive resin at the edge, and the linearity of the interface was measured. After applying a photosensitive resin at 1500 rpm on a 4 inch wafer using a spin coater (Meiders), the photosensitive resin was subjected to ESP nozzle pressure of 1.0 kg.f / cm, thinner flow rate 12 mL / min, and spin coater 2,000 rpm. After removing the resin, the treated cross section was measured using an optical microscope, and the results are shown in Table 4 below and FIGS. 1 to 9.

[표 4]각 시너 조성물의 선형도 평가 TABLE 4 Evaluation of linearity of each thinner composition

구 분division 선형도Linearity 해당 도면Corresponding drawing 구 분division 선형도Linearity 해당도면Corresponding drawings 실시예 4Example 4 -- 실시예 15Example 15 도 66 ˝ 5˝ 5 도 11 ˝ 19˝ 19 -- ˝ 6˝ 6 도 22 ˝ 21˝ 21 도 77 ˝ 7˝ 7 도 33 ˝ 23˝ 23 -- ˝ 88 -- ˝ 27˝ 27 -- ˝ 11˝ 11 도 44 비교예 1Comparative Example 1 도 88 ˝ 12˝ 12 도 55 ˝ 22 도 99 여기서,◎ : 처리단면이 깨끗함. (선형도 높음)△ : 처리단면이 약간 침식됨. (선형도 보통, 어택현상)Ⅹ : 처리단면에 과량의 잔유물이 남음. (선형도 낮음, 테일링현상)Here,?: The processing cross section is clean. (High linearity) △: Treated section is slightly eroded. (Linearity is normal, attack phenomenon) Ⅹ: Excess residue remains on the treated section. (Low linearity, tailing phenomenon)

이상에서 본 발명의 감광성수지 세정용 시너 조성물은 용해속도, 휘발성, 선형도에 대한 각 실험 및 그 결과를 나타낸 <표 2> 내지 <표 4>에 서와 같이, 비교예 1 및 2에 비하여 상기 각 특성이 우수함을 알 수 있다. 비록 개별적인 성능에서는 비교예와 유사할 지라도 종합적으로는 비교예 보다 우수하다고 할 수 있다. 특히 앞서 설명한 바와 같이 시너 조성물의 감광막 제거 경계면의 선형도는 용해속도, 휘발성, 점도 모두와 관련되는 요소이므로, <표 4> 및 도 1 내지 도 9의 선형도 정도에 대한 광학현미경 사진에서 알 수 있는 바와 같이 비교예 1 및 2에 비하여 현저하게 우수함을 알 수 있다. 첨부된 도 1 내지 도 9에 나타낸 본 발명에 따른 각 실시예의 광학현미경 사진 외에 다른 실시예의 경우에도 유사한 선형도를 나타내었다.The thinner composition for cleaning the photosensitive resin of the present invention is as compared to Comparative Examples 1 and 2 as shown in <Table 2> to <Table 4> showing the experiments and the results for the dissolution rate, volatility, and linearity. It can be seen that each characteristic is excellent. Although similar to the comparative example in individual performance, it can be said to be superior to the comparative example overall. In particular, as described above, since the linearity of the photoresist removal interface of the thinner composition is a factor related to all of dissolution rate, volatility, and viscosity, it can be seen in the optical micrographs of the degree of linearity of Table 4 and FIGS. 1 to 9. As can be seen, it is remarkably superior to Comparative Examples 1 and 2. In addition to the optical micrograph of each embodiment according to the present invention shown in the accompanying Figures 1 to 9 also showed similar linearity in the other embodiments.

이상에서 본 발명은 상기 시너 조성물의 각 실시예에 의하여 그 보호범위가 한정되지 않는다.As mentioned above, the scope of protection of the present invention is not limited by each embodiment of the thinner composition.

이상에서 설명한 바와 같이 본 발명에 따른 감광성수지 세정용 시너 조성물은As described above, the thinner composition for cleaning the photosensitive resin according to the present invention is

첫째, 감광성수지의 세정시 용해성이 우수하며,First, it has excellent solubility in washing photosensitive resin,

둘째, 증기압이 낮고 저독성이어서 청정실의 오염 및 폭발 위험성이 없고 작업자의 건강을 해칠 위험이 없으며,Secondly, it has low vapor pressure and low toxicity, so there is no risk of contamination and explosion in the clean room, and there is no danger of harming worker's health,

셋째, 점도가 낮아 노즐을 통한 분사시에 분사압을 낮출 수 있으며, 이로 인해 시너의 사용량을 감소시켜 경제성을 향상시킬 수 있고,Third, the lower the viscosity can lower the injection pressure when spraying through the nozzle, thereby reducing the amount of thinner used to improve the economics,

넷째, 감광막 제거장치의 노즐을 통한 분사시 감광성수지 경계면의 깨끗한 선형도를 나타내는 감광성수지 세정용 시너 조성물을 제공하는 효과가 있다.Fourth, there is an effect of providing a thinner composition for cleaning the photosensitive resin showing a clean linearity of the photosensitive resin interface when spraying through the nozzle of the photosensitive film removing device.

Claims (3)

10 내지 90 중량%의 프로필렌글리콜모노메틸에테르프로피오네이트에 하나 이상의 공용제를 혼합하여 제조한 감광성수지 세정용 시너 조성물.10 to 90% by weight of propylene glycol monomethyl ether propionate prepared by mixing one or more common agents for cleaning the photosensitive resin thinner composition. 제 1항에 있어서, 상기 공용제는The method of claim 1, wherein the common agent 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노메틸에테르아세테이트, 노말부틸아세테이트, 에틸락테이트, 에틸에톡시프로피오네이트, 메틸메톡시프로피오네이트, 2-헵탄온, 감마부티로락톤으로 이루어진 군으로부터 선택되는 것을 특징으로 하는 감광성수지 세정용 시너 조성물.Propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, normal butyl acetate, ethyl lactate, ethyl ethoxy propionate, methyl methoxy propionate, 2-heptanone, gamma butyrolactone The thinner composition for cleaning photosensitive resin, characterized in that the. 제 1 항 또는 제 2 항에 있어서,The method according to claim 1 or 2, 상기 시너 조성물에 혼합되는 프로필렌글리콜모노메틸에테르프로피오네이트는 10 내지 50 중량%가, 상기 공용제는 1 또는 2개가 혼합되어 2 또는 3성분계 시너 조성물을 형성하게 되는 것을 특징으로 하는 감광성수지 세정용 시너 조성물.10 to 50% by weight of the propylene glycol monomethyl ether propionate mixed in the thinner composition, the co-agent is mixed with one or two to form a two- or three-component thinner composition for cleaning the photosensitive resin Thinner composition.
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KR20020037665A (en) * 2000-11-14 2002-05-22 주식회사 동진쎄미켐 Thinner composition for removing photosensitive resin
KR100742120B1 (en) * 2001-05-23 2007-07-24 주식회사 동진쎄미켐 Thinner composition for removing photosensitive resin

Cited By (6)

* Cited by examiner, † Cited by third party
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KR100483846B1 (en) * 2002-10-15 2005-04-19 삼성전자주식회사 Thinner composition and method for stripping a photoresist using the same
KR100951365B1 (en) * 2007-11-28 2010-04-08 주식회사 동진쎄미켐 Thinner composition for removing photoresist
KR101132618B1 (en) * 2009-08-25 2012-04-06 주식회사 이엔에프테크놀로지 Thinner composition which can reduce consumption of photoresists
JP2012083727A (en) * 2010-09-17 2012-04-26 Fujifilm Corp Pattern forming method
KR20130130437A (en) * 2012-05-22 2013-12-02 동우 화인켐 주식회사 Thinner composition to reduce photoresist consumption
KR101501097B1 (en) * 2014-10-21 2015-03-12 덕산실업(주) Purification method of thinner for rinsing photoresist using benzoyl chloride

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