KR20030004352A - 소형 촬상모듈 - Google Patents
소형 촬상모듈 Download PDFInfo
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- KR20030004352A KR20030004352A KR1020027010877A KR20027010877A KR20030004352A KR 20030004352 A KR20030004352 A KR 20030004352A KR 1020027010877 A KR1020027010877 A KR 1020027010877A KR 20027010877 A KR20027010877 A KR 20027010877A KR 20030004352 A KR20030004352 A KR 20030004352A
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- 239000000758 substrate Substances 0.000 claims abstract description 223
- 238000003384 imaging method Methods 0.000 claims abstract description 123
- 239000004065 semiconductor Substances 0.000 claims abstract description 64
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 51
- 239000000919 ceramic Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 30
- 238000004382 potting Methods 0.000 claims abstract description 15
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 150000002843 nonmetals Chemical class 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 6
- 239000010953 base metal Substances 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 239000006060 molten glass Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Studio Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
Description
Claims (12)
- 세라믹 등을 포함하는 비금속제의 기판과,이 기판상에 부착되는 2차원C-MOS이미지ㆍ센서 등을 포함하는 촬상용 반도체디바이스칩과,이 촬상용 반도체디바이스칩을 덮도록 상기 기판상을 기준으로 하여 접착되는 경프레임체와,이 경프레임체에 대하여 각각 부착되는 적외광차광용 필터, 렌즈 및 조리개를 구비하는 소형 촬상모듈이며,상기 기판상에 상기 경프레임체를 접착하는 접착재로서 COB(칩ㆍ온ㆍ보드)실장에 사용되는 포팅재를 사용하는 것을 특징으로 하는 소형 촬상모듈.
- 세라믹 등을 포함하는 비금속제의 기판과,이 기판상에 부착되는 2차원C-MOS이미지ㆍ센서 등을 포함하는 촬상용 반도체디바이스칩과,이 촬상용 반도체디바이스칩을 덮도록 상기 기판상을 기준으로 하여 붙임고정되는 경프레임체와,이 경프레임체에 대하여 각각 부착되는 적외광차광용 필터, 렌즈 및 조리개를 구비하는 소형 촬상모듈이며,상기 기판상에 상기 경프레임체를 붙임고정하는 붙임고정구조로서 상기 경프레임체의 저부에 위치결정용의 돌기를 설치하는 동시에, 상기 기판상의 상대하는 위치에 상기 경프레임체의 저부에 설치되는 위치결정용의 돌기가 끼워맞추어지는 끼워맞춤구멍을 설치하는 것을 특징으로 하는 소형 촬상모듈.
- 세라믹 등을 포함하는 비금속제의 기판과,이 기판상에 부착되는 2차원C-MOS이미지ㆍ센서 등을 포함하는 촬상용 반도체디바이스칩과,이 촬상용 반도체디바이스칩을 덮도록 상기 기판상을 기준으로 하여 붙임고정되는 경프레임체와,이 경프레임체에 대하여 각각 부착되는 적외광차광용 필터, 렌즈 및 조리개를 구비하는 소형 촬상모듈이며,상기 기판상에 각종 IC의 베어칩을 실장하는 것을 특징으로 하는 소형 촬상모듈.
- 세라믹 등을 포함하는 비금속제의 기판과,이 기판상에 부착되는 2차원C-MOS이미지ㆍ센서 등을 포함하는 촬상용 반도체디바이스칩과,이 촬상용 반도체디바이스칩을 덮도록 상기 기판상을 기준으로 하여 붙임고정되는 경프레임체와,이 경프레임체에 대하여 각각 부착되는 적외광차광용 필터, 렌즈 및 조리개를 구비하는 소형 촬상모듈이며,상기 기판에 외부접속용의 플렉시블기판을 부착하는 동시에, 이 플렉시블기판상에 상기 기판의 저부방향으로부터의 빛을 차광하는 차광패턴을 형성하는 것을 특징으로 하는 소형 촬상모듈.
- 세라믹 등을 포함하는 비금속제의 기판과,이 기판상에 부착되는 2차원C-MOS이미지ㆍ센서 등을 포함하는 촬상용 반도체디바이스칩과,이 촬상용 반도체디바이스칩을 덮도록 상기 기판상을 기준으로 하여 붙임고정되는 경프레임체와,이 경프레임체에 대하여 각각 부착되는 적외광차광용 필터, 렌즈 및 조리개를 구비하는 소형 촬상모듈이며,상기 기판에 외부접속용의 랜드겸용스루홀부를 설치하는 동시에, 이 랜드겸용스루홀부에서 다른 기판을 걸어맞춤으로써 상기 기판과 다른 기판의 전기적 접속 및 기계적 홀딩을 가능하게 하는 것을 특징으로 하는 소형 촬상모듈.
- 세라믹 등을 포함하는 비금속제의 기판과,이 기판상에 부착되는 2차원C-MOS이미지ㆍ센서 등을 포함하는 촬상용 반도체디바이스칩과,이 촬상용 반도체디바이스칩을 덮도록 상기 기판상을 기준으로 하여 붙임고정되는 경프레임체와,이 경프레임체에 대하여 부착되는 적외광차광용 필터를 구비하는 소형 촬상모듈이며,상기 경프레임체는 다른 렌즈경프레임이 부착 가능한 구조를 갖고 있는 것을 특징으로 하는 소형 촬상모듈.
- 제 6 항에 있어서,상기 기판상에 상기 경프레임체를 접착하는 접착재로서 COB(칩ㆍ온ㆍ보드)실장에 사용되는 포팅재를 사용하는 것을 특징으로 하는 소형 촬상모듈.
- 제 6 항에 있어서,상기 기판상에 상기 경프레임체를 붙임고정하는 구조로서 상기 경프레임체의 저부에 위치결정용의 돌기를 설치하는 동시에, 상기 기판상의 상대하는 위치에 상기 경프레임체의 저부에 설치되는 위치결정용의 돌기가 끼워맞추어지는 끼워맞춤구멍을 설치하는 것을 특징으로 하는 소형 촬상모듈.
- 제 6 항에 있어서,상기 기판상에 각종 IC의 베어칩을 실장하는 것을 특징으로 하는 소형 촬상모듈.
- 제 6 항에 있어서,상기 기판에 외부접속용의 플렉시블기판을 부착하는 동시에, 이 플렉시블기판상에 상기 기판의 저부방향으로부터의 빛을 차광하는 차광패턴을 형성하는 것을 특징으로 하는 소형 촬상모듈.
- 제 6 항에 있어서,상기 기판에 외부접속용의 랜드겸용스루홀부를 설치하는 동시에, 이 랜드겸용스루홀부에서 다른 기판을 걸어맞춤으로써 다른 기판과의 전기적 접속 및 기계적 홀딩을 가능하게 하는 것을 특징으로 하는 소형 촬상모듈.
- 제 1 항에서 제 11 항 중 어느 한 항에 있어서,상기 기판의 적어도 상기 경프레임체에 덮인 부위에 존재하는, 상기 기판의 복수의 층 또는 면의 배선패턴간을 전기적으로 접속하기 위해 스루홀부를 설치하는 동시에, 이 스루홀부는 땜납으로 충전됨으로써 차광되어 있는 것을 특징으로 하는 소형 촬상모듈.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000057282A JP2001245217A (ja) | 2000-03-02 | 2000-03-02 | 小型撮像モジュール |
JPJP-P-2000-00057282 | 2000-03-02 | ||
PCT/JP2001/001226 WO2001065838A1 (fr) | 2000-03-02 | 2001-02-21 | Module de prise de vue de petite taille |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030004352A true KR20030004352A (ko) | 2003-01-14 |
KR100538988B1 KR100538988B1 (ko) | 2005-12-27 |
Family
ID=18578099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-7010877A KR100538988B1 (ko) | 2000-03-02 | 2001-02-21 | 소형 촬상모듈 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20030007084A1 (ko) |
JP (1) | JP2001245217A (ko) |
KR (1) | KR100538988B1 (ko) |
CN (3) | CN1783951A (ko) |
TW (1) | TW527727B (ko) |
WO (1) | WO2001065838A1 (ko) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4033669B2 (ja) * | 2001-12-04 | 2008-01-16 | シャープ株式会社 | カメラモジュール |
KR100442698B1 (ko) | 2002-06-19 | 2004-08-02 | 삼성전자주식회사 | 촬상용 반도체 장치 및 그 제조방법 |
KR100718421B1 (ko) * | 2002-06-28 | 2007-05-14 | 교세라 가부시키가이샤 | 소형 모듈 카메라, 카메라 모듈, 카메라 모듈 제조 방법 및 촬상 소자의 패키징 방법 |
US7005310B2 (en) | 2002-08-14 | 2006-02-28 | Renesas Technology Corporation | Manufacturing method of solid-state image sensing device |
US20040113047A1 (en) * | 2002-12-16 | 2004-06-17 | Hsiu Wen Tu | Image sensor module |
JP2004200965A (ja) * | 2002-12-18 | 2004-07-15 | Sanyo Electric Co Ltd | カメラモジュール及びその製造方法 |
TWI286434B (en) * | 2003-03-12 | 2007-09-01 | Hon Hai Prec Ind Co Ltd | Digital camera |
EP1471730A1 (en) * | 2003-03-31 | 2004-10-27 | Dialog Semiconductor GmbH | Miniature camera module |
JP4510403B2 (ja) * | 2003-05-08 | 2010-07-21 | 富士フイルム株式会社 | カメラモジュール及びカメラモジュールの製造方法 |
KR100526191B1 (ko) * | 2003-06-18 | 2005-11-03 | 삼성전자주식회사 | 고체 촬상용 반도체 장치 |
JP4441211B2 (ja) | 2003-08-13 | 2010-03-31 | シチズン電子株式会社 | 小型撮像モジュール |
JP4405208B2 (ja) | 2003-08-25 | 2010-01-27 | 株式会社ルネサステクノロジ | 固体撮像装置の製造方法 |
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-
2000
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- 2001-02-21 KR KR10-2002-7010877A patent/KR100538988B1/ko not_active IP Right Cessation
- 2001-02-21 CN CNA2005101294484A patent/CN1783950A/zh active Pending
- 2001-02-21 WO PCT/JP2001/001226 patent/WO2001065838A1/ja active IP Right Grant
- 2001-02-21 CN CNB018059457A patent/CN100490507C/zh not_active Expired - Fee Related
- 2001-02-26 TW TW090104367A patent/TW527727B/zh not_active IP Right Cessation
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US20030007084A1 (en) | 2003-01-09 |
TW527727B (en) | 2003-04-11 |
JP2001245217A (ja) | 2001-09-07 |
CN1408176A (zh) | 2003-04-02 |
WO2001065838A1 (fr) | 2001-09-07 |
CN1783950A (zh) | 2006-06-07 |
CN1783951A (zh) | 2006-06-07 |
KR100538988B1 (ko) | 2005-12-27 |
CN100490507C (zh) | 2009-05-20 |
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