KR20020091643A - 극초단파를 이용한 화학증착장치 및 그 장치를 이용한박막제조방법 - Google Patents
극초단파를 이용한 화학증착장치 및 그 장치를 이용한박막제조방법 Download PDFInfo
- Publication number
- KR20020091643A KR20020091643A KR1020010030484A KR20010030484A KR20020091643A KR 20020091643 A KR20020091643 A KR 20020091643A KR 1020010030484 A KR1020010030484 A KR 1020010030484A KR 20010030484 A KR20010030484 A KR 20010030484A KR 20020091643 A KR20020091643 A KR 20020091643A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- substrate
- reactor
- silicon
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 123
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 65
- 238000010438 heat treatment Methods 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 85
- 229910052710 silicon Inorganic materials 0.000 claims description 76
- 239000010703 silicon Substances 0.000 claims description 75
- 238000000151 deposition Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 14
- 239000012495 reaction gas Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 19
- 238000000427 thin-film deposition Methods 0.000 abstract description 14
- 238000000137 annealing Methods 0.000 abstract description 3
- 229910052594 sapphire Inorganic materials 0.000 description 25
- 239000010980 sapphire Substances 0.000 description 25
- 239000007789 gas Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 19
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 14
- 230000003213 activating effect Effects 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 238000000197 pyrolysis Methods 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000007736 thin film deposition technique Methods 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- YGSFNCRAZOCNDJ-UHFFFAOYSA-N propan-2-one Chemical compound CC(C)=O.CC(C)=O YGSFNCRAZOCNDJ-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/28—Deposition of only one other non-metal element
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Abstract
Description
Claims (9)
- 반응로(furnace)로 유입되는 반응가스의 양과 속도를 제어하는 제어부와, 반응로(furnace)를 가열하는 가열부와, 상기 반응로를 진공상태로 유지시키는 진공부를 포함하여 이루어지는 화학증착(Chemical Vapor Deposition)장치에 있어서;상기 가열부에 마이크로파 발생기가 포함되는 것을 특징으로 하는 화학증착장치.
- 제 1 항에 따른 가열부에 마이크로파 발생기를 포함하는 화학증착장치를 이용하여 반응로 내의 온도를 가열하여 박막 증착시 반응기체를 활성화시키고, 기판과 박막층의 계면에서의 응력발생을 줄이는 것을 특징으로 하는 박막제조방법.
- 제 2 항에 있어서;상기 마이크로파 발생기는 915㎒ 내지 2.45㎓ 사이의 출력 주파수를 갖는 것을 특징으로 하는 박막제조방법.
- 제 2 항에 있어서;상기 마이크로파 발생기는 250W 내지 250㎾ 사이의 출력을 갖는 것을 특징으로 하는 박막제조방법.
- 제 2 항에 있어서;상기 기판은 유전손실각이 0.00004 이상인 기판을 사용하여 박막을 증착하는 것을 특징으로 하는 박막제조방법.
- 제 2 항에 있어서;상기 기판은 유전율이 3.0 이상 기판을 사용하여 박막을 증착하는 것을 특징으로 하는 박막제조방법.
- 제 2 항에 있어서;상기 기판은 투명 세라믹 기판을 사용하는 것을 특징으로 하는 박막제조방법.
- 제 2 항에 있어서;상기 박막 층위에 증착되는 물질은 실리콘(Si)이 포함된 반도체 물질인 것을 특징으로 하는 박막제조방법.
- 제 2 항에 있어서;상기 박막 층위에 증착되는 물질은 게르마늄(Ge)이 포함된 반도체 물질인 것을 특징으로 하는 박막제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010030484A KR20020091643A (ko) | 2001-05-31 | 2001-05-31 | 극초단파를 이용한 화학증착장치 및 그 장치를 이용한박막제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010030484A KR20020091643A (ko) | 2001-05-31 | 2001-05-31 | 극초단파를 이용한 화학증착장치 및 그 장치를 이용한박막제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20020091643A true KR20020091643A (ko) | 2002-12-06 |
Family
ID=27707343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010030484A Ceased KR20020091643A (ko) | 2001-05-31 | 2001-05-31 | 극초단파를 이용한 화학증착장치 및 그 장치를 이용한박막제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20020091643A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7005389B2 (en) | 2003-04-02 | 2006-02-28 | Samsung Electronics Co., Ltd. | Methods for forming a thin film on an integrated circuit device by sequentially providing energies to activate the reactants |
KR101315104B1 (ko) * | 2011-09-07 | 2013-10-07 | 전자부품연구원 | 극초단파를 이용한 ιτο 박막 제조 방법 |
-
2001
- 2001-05-31 KR KR1020010030484A patent/KR20020091643A/ko not_active Ceased
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7005389B2 (en) | 2003-04-02 | 2006-02-28 | Samsung Electronics Co., Ltd. | Methods for forming a thin film on an integrated circuit device by sequentially providing energies to activate the reactants |
KR101315104B1 (ko) * | 2011-09-07 | 2013-10-07 | 전자부품연구원 | 극초단파를 이용한 ιτο 박막 제조 방법 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5248630A (en) | Thin film silicon semiconductor device and process for producing thereof | |
US5370912A (en) | Diamond film deposition with a microwave plasma | |
EP0301463A2 (en) | Thin film silicon semiconductor device and process for producing it | |
JPS6237527B2 (ko) | ||
CN102057479A (zh) | 具有水蒸气的uv固化方法与设备 | |
JP2010534605A (ja) | 第iii族金属窒化物とその製造方法 | |
JP2018127370A (ja) | グラフェン層の平坦化方法 | |
CN1237273A (zh) | 制造半导体薄膜的方法及其所用设备 | |
CN110718486B (zh) | 一种薄膜转移方法 | |
CN112420510A (zh) | 热处理方法和热处理装置 | |
US20180226261A1 (en) | Method of anisotropically etching graphene | |
JP2020147839A5 (ko) | ||
KR20020091643A (ko) | 극초단파를 이용한 화학증착장치 및 그 장치를 이용한박막제조방법 | |
JPH0222460A (ja) | マイクロ波透過性ウィンドウ組立体及びマイクロ波プラズマ発生装置、並びにそれらを用いたエッチング方法及び堆積膜形成法 | |
JP2009164519A (ja) | 低温ポリシリコン用保護膜の成膜方法、低温ポリシリコン用保護膜の成膜装置および低温ポリシリコンtft | |
JP7005367B2 (ja) | ボロン系膜の成膜方法および成膜装置 | |
JP2008243965A (ja) | 半導体処理装置および半導体処理方法 | |
JP2008187187A (ja) | 低誘電率膜およびその成膜方法並びにその膜を用いた電子装置 | |
JP2002110551A (ja) | 半導体薄膜の形成方法及び装置 | |
CN115449776A (zh) | 一种二维氮化镓材料及其制备方法 | |
JP7033999B2 (ja) | ボロン系膜の成膜方法および成膜装置 | |
JPH07221026A (ja) | 高品質半導体薄膜の形成方法 | |
TWI434323B (zh) | 摻雜式半導體基板中摻雜物的活化方法 | |
JP4451508B2 (ja) | 気相成長方法 | |
JP2002164290A (ja) | 多結晶シリコン膜の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20010531 |
|
PA0201 | Request for examination | ||
PG1501 | Laying open of application | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20030430 Patent event code: PE09021S01D |
|
E601 | Decision to refuse application | ||
PE0601 | Decision on rejection of patent |
Patent event date: 20031008 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20030430 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |