KR20020045725A - Chiller for a semiconductor process - Google Patents
Chiller for a semiconductor process Download PDFInfo
- Publication number
- KR20020045725A KR20020045725A KR1020000075109A KR20000075109A KR20020045725A KR 20020045725 A KR20020045725 A KR 20020045725A KR 1020000075109 A KR1020000075109 A KR 1020000075109A KR 20000075109 A KR20000075109 A KR 20000075109A KR 20020045725 A KR20020045725 A KR 20020045725A
- Authority
- KR
- South Korea
- Prior art keywords
- coolant
- tank
- heater
- heating
- chiller
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
본 발명은 반도체 공정용 칠러에 관한 것으로서, 보다 상세하게는 내부의 냉각제 순환 구조를 수직형으로 개선시켜서 가열된 냉각제가 기화되어 낭비되는 것을 방지하고 항상 일정량의 냉각제가 히터에 의하여 가열되도록 개선된 반도체 공정용 칠러에 관한 것이다.The present invention relates to a semiconductor process chiller, and more particularly, to improve the internal coolant circulation structure vertically to prevent the heated coolant from being vaporized and wasted, and to improve the semiconductor to be always heated by a certain amount of coolant. It relates to a process chiller.
칠러(chiller)란 반도체 소자의 제조공정에서 안정적인 공정제어를 위한 온도조절장치이다. 특히 칠러는 여러공정 중에서 식각 및 노광공정에서 주로 사용하게 되는데 공정중 과도한 열이 발생하는 전극판 및 챔버(chamber)의 온도를 일정하게 유지시켜 줌으로써 고온으로 인한 웨이퍼의 파손 및 생산성의 저하를 막아주게 된다.The chiller is a temperature controller for stable process control in the manufacturing process of semiconductor devices. In particular, the chiller is mainly used in the etching and exposure processes among the various processes, and keeps the temperature of the electrode plate and chamber where excessive heat is generated during the process to prevent damage to the wafer and degradation of productivity due to high temperature. do.
웨이퍼가 반도체 공정을 수행하기 위하여 척에 안착된 상태에서 후면을 냉각하기 위한 종래의 칠러는 도 1과 같이 구성된다.A conventional chiller for cooling the rear surface while the wafer is seated on the chuck to perform the semiconductor process is configured as shown in FIG.
웨이퍼(10)가 안착되는 척(12)에 냉각제가 배관(14)으로부터 공급되어 척Coolant is supplied from the pipe 14 to the chuck 12 on which the wafer 10 is to be seated.
(12)에서 순환되어 웨이퍼(10)의 후면을 냉각시킨 후 배관(16)을 통하여 칠러로 순환된다.Circulated in (12) to cool the back surface of the wafer 10, and then circulated to the chiller through the pipe (16).
칠러(20)는 커버(22)가 실리콘 캐스킷(24)으로 기밀이 유지되도록 개재되어 냉각제 탱크(26)에 결합되고, 냉각제 탱크(26)는 격리판(28)에 의하여 내부 공간이 냉각조(30)와 가열조(32)로 구분된다. 냉각제 탱크(26)에는 일정 수위의 냉각제가 수용된다.The chiller 20 is coupled to the coolant tank 26 with the cover 22 interposed so that the airtightness is maintained by the silicon gasket 24, and the coolant tank 26 has an internal space by the separator 28. It is divided into 30 and the heating tank 32. The coolant tank 26 contains coolant at a predetermined level.
냉각조(30)에는 쿨러(34)가 설치되며, 쿨러(34)는 배관(16)을 통하여 유입된 냉각제를 냉각시켜서 드레인(36)으로 배출한다. 그리고, 가열조(32)에는 히터 구동부(38)에서 공급되는 전원에 의하여 가열되는 히팅 코일(40)이 구성되며, 히팅 코일(40)은 냉각되어 격리판(28)에 형성된 관통구를 통하여 넘어온 냉각제가 일정 온도가 되도록 가열시킨다.The cooler 34 is installed in the cooling tank 30, and the cooler 34 cools the coolant introduced through the pipe 16 and discharges it to the drain 36. In addition, the heating tank 32 includes a heating coil 40 heated by the power supplied from the heater driving unit 38, and the heating coil 40 is cooled and passed through the through hole formed in the separator 28. The coolant is heated to a constant temperature.
그러므로, 냉각된 냉각제가 가열에 의하여 일정 온도로 유지되어 펌프(42)의 펌핑에 의하여 척(12)으로 공급되어 웨이퍼(10) 후면 냉각에 이용된다.Therefore, the cooled coolant is maintained at a constant temperature by heating and supplied to the chuck 12 by pumping of the pump 42 to be used for cooling the wafer 10 back side.
이러한 과정에서 냉각조(30)의 냉각된 냉각제는 화살표 46과 같이 가열조In this process, the cooled coolant in the cooling bath 30 is heated in the heating tank as shown by arrow 46.
(32)로 순환되고, 가열조(32)에서 가열된 냉각제는 화살표 48과 같이 냉각조(30)로 순환될 수 있다.The coolant circulated to 32 and heated in the heating bath 32 may be circulated to the cooling bath 30 as shown by arrow 48.
그러나, 냉각조(30)의 냉각과 가열조(32)의 가열의 적절한 조합으로 일정한 온도의 냉각제를 공급하는 칠러에서 코일(40)의 가열온도가 높기 때문에 가열조However, since the heating temperature of the coil 40 is high in the chiller which supplies a coolant of a constant temperature by a proper combination of cooling of the cooling tank 30 and heating of the heating tank 32, the heating tank is heated.
(32)에서 가열된 냉각제는 화살표 50와 같이 소정량 증발된다.The coolant heated at 32 is evaporated a predetermined amount as shown by arrow 50.
이러한 냉각제의 증발은 과도한 냉각제의 소비를 야기시키는 문제점이 있다.This evaporation of the coolant has a problem causing excessive consumption of the coolant.
또한, 냉각제의 증발로 인하여 냉각제의 수위가 낮아지거나 냉각제의 온도 변화에 따라서 수위가 낮아지면 코일이 노출되어서 과열이 초래되는 문제점이 있다.In addition, when the water level of the coolant is lowered due to the evaporation of the coolant or the water level is lowered according to the temperature change of the coolant, there is a problem in that the coil is exposed to cause overheating.
상술한 바와 같이 종래의 칠러는 관리상 문제점과 안정적인 가동상 문제점을 갖는다.As described above, the conventional chiller has management problems and stable operation problems.
본 발명의 목적은 가열에 따른 냉각제의 증발을 방지하여 반도체 공정의 냉각용으로 순환되는 냉각제가 낭비되는 것을 방지함에 있다.An object of the present invention is to prevent the coolant circulated for cooling the semiconductor process by wasting by preventing evaporation of the coolant due to heating.
본 발명의 다른 목적은 히터가 항상 일정량 이상의 냉각제를 가열하여 과열과 같은 이상 상태가 발생되지 않고 안정적으로 동작되게 함에 있다.Another object of the present invention is to ensure that the heater always heats a predetermined amount or more of the coolant so that an abnormal state such as overheating does not occur and is stably operated.
도 1은 종래의 반도체 공정용 칠러를 나타내는 단면도1 is a cross-sectional view showing a conventional chiller for semiconductor processing.
도 2는 본 발명에 따른 반도체 공정용 칠러를 나타내는 단면도2 is a cross-sectional view showing a chiller for a semiconductor process according to the present invention.
본 발명에 따른 반도체 공정용 칠러는, 소정 장치의 냉각을 위하여 순환되는 냉각제의 온도를 조절하기 위하여 소정 높이에 격리판이 구성되어 상부에 냉각조와 하부에 가열조가 형성된 냉각제 탱크, 상기 냉각제 탱크의 상부 냉각조 내에 설치되어서 상기 순환된 냉각제를 유입하여 냉각시킨 후 상기 냉각조 내로 배출시키는 쿨러, 상기 냉각제 탱크의 하부 가열조 내에 설치되어서 상기 쿨러에서 배출된 냉각된 냉각제가 상기 격리판을 넘어서 상기 가열조로 유입되면 가열시키는 히터, 상기 히터에 전원을 공급하는 히터 구동부 및 상기 가열조의 냉각제를 순환을 위하여드레인시켜서 펌핑하는 펌프를 구비한다.The chiller for a semiconductor process according to the present invention is a coolant tank having a separator formed at a predetermined height to adjust a temperature of a coolant circulated for cooling a predetermined device, and having a cooling tank at a top and a heating tank at a bottom thereof, and an upper cooling of the coolant tank. A cooler installed in the tank to cool the introduced circulating coolant and then discharge it into the cooling tank; And a heater for heating the heater, a heater driving unit for supplying power to the heater, and a pump for draining and pumping the coolant of the heating tank for circulation.
여기에 상기 냉각제 탱크의 측벽의 일정한 높이에 설치되는 제 1 수위 감지 센서와 이보다 낮은 높이에 설치되는 제 2 수위감지센서, 상기 제 1 수위 감지센서에서 센싱된 신호로 냉각제의 충전을 경보하는 경보부를 더 구비하고, 상기 제 2 수위감지센서의 센싱신호에 의하여 상기 히터 구동부와 상기 펌프의 구동을 제어하도록 구성될 수 있다.Here, the first water level sensor installed at a constant height of the side wall of the coolant tank, the second water level sensor installed at a lower level, the alarm unit for warning the charge of the coolant by the signal sensed by the first water level sensor Further, it may be configured to control the driving of the heater driving unit and the pump by the sensing signal of the second level sensor.
이하, 본 발명에 따른 반도체 공정용 칠러의 바람직한 실시예에 대하여 첨부 도면을 참조하여 상세히 설명한다.Hereinafter, a preferred embodiment of a semiconductor process chiller according to the present invention will be described in detail with reference to the accompanying drawings.
도 2를 참조하면, 본 발명에 따른 실시예는 웨이퍼(100)가 안착되는 척(102)에 웨이퍼(100)의 후면 냉각을 위한 냉각제를 배관(104)과 배관(106)을 통하여 순환시키기 위한 것이다.Referring to FIG. 2, an embodiment according to the present invention is for circulating a coolant for cooling the back surface of the wafer 100 through the pipe 104 and the pipe 106 to the chuck 102 on which the wafer 100 is seated. will be.
칠러(110)는 커버(112)와 냉각제 탱크(116)가 실리콘 개스킷(114)를 개재하여 결합되도록 구성되며, 냉각제 탱크(116)는 상부의 냉각조(120)와 하부의 가열조The chiller 110 is configured such that the cover 112 and the coolant tank 116 are coupled to each other via the silicon gasket 114, and the coolant tank 116 has the upper cooling tank 120 and the lower heating tank.
(122)로 격리판(124)으로 구분된다.And separated by a separator 124.
상부의 냉각조(120)에는 쿨러(126)가 설치되고, 쿨러(126)는 배관(106)으로 유입된 냉각제를 냉각하여 드레인관(128)을 통하여 냉각조(120)로 공급한다.The cooler 126 is installed in the upper cooling tank 120, and the cooler 126 cools the coolant introduced into the pipe 106 and supplies it to the cooling tank 120 through the drain pipe 128.
그리고, 하부의 가열조(122)에는 히터 구동부(130)로부터 전원을 공급받아서 가열되는 히터(132)가 설치되고, 가열조(122)의 바닥에는 냉각제의 교체를 위하여 이용되는 드레인관(134)이 소정 영역에 형성된다.In addition, a heater 132 that is heated by receiving power from the heater driver 130 is installed in the lower heating tank 122, and a drain pipe 134 used for replacing the coolant at the bottom of the heating tank 122. It is formed in this predetermined area.
그리고, 가열조(122)의 바닥 다른 영역에는 배관(104)에 연결되는 유출구가형성되며, 배관(104)에 펌프(136)가 설치되어서 가열조(122)에 수용된 냉각제를 순환시킨다.In addition, an outlet connected to the pipe 104 is formed at another bottom of the heating tank 122, and a pump 136 is installed in the pipe 104 to circulate the coolant accommodated in the heating tank 122.
그리고, 냉각제 탱크(116)의 측벽 소정 높이에 냉각제의 수위를 감지하기 위한 제 1 수위감지센서(138)가 설치되어서 냉각제의 수위가 떨어지면 그에 대한 경보신호를 경보부(140)로 전송하고, 경보부(140)는 발음 또는 발광으로 경보동작을 수행하도록 구성된다. 그리고, 수위감지센서(138)보다 하부에 제 2 수위감지센서Then, the first level sensor 138 for detecting the level of the coolant is installed on the predetermined height of the side wall of the coolant tank 116, and when the level of the coolant drops, transmits an alarm signal to the alarm unit 140, and alerts ( 140 is configured to perform an alarm operation by pronunciation or light emission. The second water level sensor is lower than the water level sensor 138.
(142)가 설치되고, 제 2 수위감지센서(142)는 수위를 센싱한 신호 'A'를 히터구동부(130)와 펌프(136)에 전달하고, 냉각제의 수위가 제 2 수위감지센서(142) 위치까지 떨어져서 그에 대한 신호 'A'가 입력되면 히터구동부(130)와 펌프(136)는 동작이 중지되도록 구성된다.142 is installed, and the second water level sensor 142 transmits the signal 'A' sensing the water level to the heater driver 130 and the pump 136, and the level of the coolant is the second water level sensor 142. The heater driving unit 130 and the pump 136 are configured to stop their operation when the signal 'A' is inputted away from the) position.
상술한 바와 같이 구성됨에 따라서, 척(102)에 냉각제가 배관(104, 106)을 따라서 순환되며, 웨이퍼(100)의 후면을 냉각시킨 냉각제는 칠러(110)에 공급되어 다시 일정 수준의 온도로 조절된 후 재 공급되는 순환계가 구성된다.As described above, the coolant is circulated along the pipes 104 and 106 in the chuck 102, and the coolant that cools the rear surface of the wafer 100 is supplied to the chiller 110 to be returned to a predetermined level of temperature. A circulatory system is constructed that is resupplied and then adjusted.
이때 칠러(110)의 내부 냉각조(120)에는 배관(106)을 통하여 공급되는 냉각제가 쿨러(126)에서 냉각되어서 드레인 배관(128)을 통하여 배출된다.At this time, the coolant supplied through the pipe 106 to the internal cooling tank 120 of the chiller 110 is cooled by the cooler 126 and discharged through the drain pipe 128.
드레인 배관(128)을 통하여 배출되는 냉각제는 이미 배출된 다른 냉각제보다 온도가 상대적으로 낮기 때문에 상승하지 않고 격리판(118)의 하부에 침적되면서 점차적으로 상승되어 화살표 144와 같이 가열조(122)로 유입된다.The coolant discharged through the drain pipe 128 does not rise because the temperature is lower than that of the other coolant already discharged, and is gradually raised as it is deposited on the lower part of the separator 118 to the heating tank 122 as shown by arrow 144. Inflow.
가열조(122)에 유입된 냉각제는 히터(132)의 가열에 의하여 척(102)으로 공급되기 적당한 온도로 상승되며, 이렇게 온도가 조절된 냉각제는 펌프(136)의 펌핑에 의하여 순환된다.The coolant introduced into the heating tank 122 is raised to a temperature suitable for being supplied to the chuck 102 by the heating of the heater 132, and the coolant thus adjusted is circulated by the pumping of the pump 136.
한편, 일부 냉각제는 히터(132)에 직접 가열되어 기화점까지 온도가 상승되지만 상부로 이동되면서 다른 냉각제와 열교환이 이루어짐으로써 온도가 하강된다. 결국, 냉각제는 열교환에 의하여 증발되지 않는다. 따라서, 증발에 따른 냉각제의 낭비가 방지될 수 있다.On the other hand, some of the coolant is heated directly to the heater 132, the temperature rises up to the vaporization point, but as the heat is moved to the other coolant while moving upward, the temperature is lowered. As a result, the coolant is not evaporated by heat exchange. Therefore, waste of the coolant due to evaporation can be prevented.
그리고, 실시예의 구성에 의하여 히터(132)가 냉각제 탱크(116)의 하부에 구성됨으로써 냉각제가 어느 정도 레벨 이하로 줄더라도 히터가 노출될 정도까지 줄지 않게되어서 항상 일정량의 냉각제를 히터가 가열시키고 공기에 노출되지 않게 된다. 결국 과열이 발생되지 않게 된다.In addition, since the heater 132 is configured under the coolant tank 116 according to the configuration of the embodiment, even if the coolant decreases to a certain level or less, the heater is not reduced to the exposed level so that the heater always heats a certain amount of coolant and air. Will not be exposed. Eventually no overheating will occur.
따라서, 본 발명은 냉각제가 증발에 의하여 낭비되는 것이 방지될 수 있고, 히터가 항상 일정량 이상의 냉각제를 가열함으로써 이상상태가 발생되지 않아서, 설비 가동율을 향상시키고 설비의 안정성이 확보되는 효과가 있다.Therefore, the present invention can be prevented that the coolant is wasted by evaporation, the abnormal state is not generated by the heater is always heating a predetermined amount or more of the coolant, there is an effect to improve the equipment operation rate and ensure the stability of the equipment.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0075109A KR100385450B1 (en) | 2000-12-11 | 2000-12-11 | Chiller for a semiconductor process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0075109A KR100385450B1 (en) | 2000-12-11 | 2000-12-11 | Chiller for a semiconductor process |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2020000034639U Division KR200232736Y1 (en) | 2000-12-11 | 2000-12-11 | Chiller for a semiconductor process |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020045725A true KR20020045725A (en) | 2002-06-20 |
KR100385450B1 KR100385450B1 (en) | 2003-06-02 |
Family
ID=27680839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2000-0075109A KR100385450B1 (en) | 2000-12-11 | 2000-12-11 | Chiller for a semiconductor process |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100385450B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102224227B1 (en) * | 2019-11-05 | 2021-03-05 | 김평태 | A vacuum chiller tank for semiconductor manufacturing equipments |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR980011964A (en) * | 1996-07-12 | 1998-04-30 | 김광호 | Cooling system |
KR100219419B1 (en) * | 1996-08-26 | 1999-10-01 | 윤종용 | A heat exchange system of semiconductor fabrication apparatus |
KR20000000303U (en) * | 1998-06-08 | 2000-01-15 | 김영환 | Cooling water supply assembly for semiconductor manufacturing |
KR20000007259A (en) * | 1998-07-01 | 2000-02-07 | 윤종용 | Chamber cooling system for semiconductor device fabrication |
KR100337575B1 (en) * | 2000-07-20 | 2002-05-22 | 장명식 | Coolant temperature control apparatus of cooler for semiconductor fabrication device |
-
2000
- 2000-12-11 KR KR10-2000-0075109A patent/KR100385450B1/en active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102224227B1 (en) * | 2019-11-05 | 2021-03-05 | 김평태 | A vacuum chiller tank for semiconductor manufacturing equipments |
Also Published As
Publication number | Publication date |
---|---|
KR100385450B1 (en) | 2003-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4256031B2 (en) | Processing apparatus and temperature control method thereof | |
US5892207A (en) | Heating and cooling apparatus for reaction chamber | |
CN104903995B (en) | Circulating cooling heater | |
US7870751B2 (en) | Temperature control system and substrate processing apparatus | |
KR20010092299A (en) | Steam generator | |
KR20030061330A (en) | Etching apparatus | |
KR200232736Y1 (en) | Chiller for a semiconductor process | |
KR100385450B1 (en) | Chiller for a semiconductor process | |
KR101401350B1 (en) | Temperature control of semiconductor manufacturing equipment and its control method | |
JP2001082845A (en) | Vaporization cooling device | |
KR200409072Y1 (en) | cooling apparatus of suscepter for semiconductor and liquid circuit displayLCD panel manufacturing device | |
KR100219417B1 (en) | H2so4 boil station for semiconductor process | |
KR0122871Y1 (en) | Temperature and flow automatic control unit of cleaning bath for semiconductor manufacture | |
JPH102631A (en) | Evaporative cooling device | |
KR101398439B1 (en) | The chemical mixing tank | |
KR200198436Y1 (en) | Bubbler for deposition apparatus oxide-film of semiconductor wafer | |
KR101006252B1 (en) | Platen temperature control system using chiller | |
KR19980072157A (en) | Heat exchange system of semiconductor device manufacturing equipment | |
JP2004235425A (en) | Vertical furnace and manufacturing method of semiconductor device | |
KR20000000303U (en) | Cooling water supply assembly for semiconductor manufacturing | |
KR0178463B1 (en) | Wet etching bath for semiconductor manufacturing | |
KR19990039626A (en) | Apparatus for Cooling Semiconductor Wafers | |
KR100547938B1 (en) | Wafer cooling apparatus used in an ion implantation process | |
KR200297906Y1 (en) | Apparatus for cooling of a ion implanter | |
KR100241696B1 (en) | Cooling apparatus for ion implanter semiconductor process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130513 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20140514 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20150121 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20160219 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20170106 Year of fee payment: 15 |
|
FPAY | Annual fee payment |
Payment date: 20171228 Year of fee payment: 16 |
|
FPAY | Annual fee payment |
Payment date: 20190122 Year of fee payment: 17 |