KR20020041866A - 얼룩 개선용 포토레지스트 조성물 - Google Patents
얼룩 개선용 포토레지스트 조성물 Download PDFInfo
- Publication number
- KR20020041866A KR20020041866A KR1020000071489A KR20000071489A KR20020041866A KR 20020041866 A KR20020041866 A KR 20020041866A KR 1020000071489 A KR1020000071489 A KR 1020000071489A KR 20000071489 A KR20000071489 A KR 20000071489A KR 20020041866 A KR20020041866 A KR 20020041866A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist composition
- butyl acetate
- present
- pin
- solvent
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
Claims (4)
- 포토레지스트 조성물에 있어서,3-메톡시부틸아세테이트, n-부틸아세테이트 및 γ-부티롤락톤을 포함하는 용매; 계면활성제; 및 첨가제를 포함하는 것을 특징으로 하는 포토레지스트 조성물.
- 제 1항에 있어서, 상기 용매가 25-85 중량%의 3-메톡시부틸아세테이트, 15-75 중량%의 n-부틸아세테이트 및 1-10 중량%의 γ-부티롤락톤을 포함하는 것을 특징으로 하는 포토레지스트 조성물.
- 제 1항 또는 제 2항에 있어서, 상기 계면활성제가 불소계 계면활성제인 것을 특징으로 하는 포토레지스트 조성물.
- 제 1항 또는 제 2항에 있어서, 상기 첨가제가 폴리에테르계 수지인 것을 특징으로 하는 포토레지스트 조성물.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000071489A KR100740929B1 (ko) | 2000-11-29 | 2000-11-29 | 얼룩 개선용 포토레지스트 조성물 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000071489A KR100740929B1 (ko) | 2000-11-29 | 2000-11-29 | 얼룩 개선용 포토레지스트 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020041866A true KR20020041866A (ko) | 2002-06-05 |
KR100740929B1 KR100740929B1 (ko) | 2007-07-19 |
Family
ID=19702142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000071489A KR100740929B1 (ko) | 2000-11-29 | 2000-11-29 | 얼룩 개선용 포토레지스트 조성물 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100740929B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102134633B1 (ko) | 2016-11-25 | 2020-07-16 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 이를 이용한 블랙 화소 격벽층 및 디스플레이 장치 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3813721B2 (ja) * | 1997-12-26 | 2006-08-23 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
EP0930541A1 (en) * | 1998-01-16 | 1999-07-21 | JSR Corporation | Radiation sensitive resin composition |
-
2000
- 2000-11-29 KR KR1020000071489A patent/KR100740929B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100740929B1 (ko) | 2007-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102346806B1 (ko) | 포토레지스트 패턴 트리밍 조성물 및 방법 | |
US9696629B2 (en) | Photoresist pattern trimming compositions and methods | |
KR102195470B1 (ko) | 포토레지스트 패턴 트리밍 방법 | |
KR102129856B1 (ko) | 포토레지스트 패턴 트리밍 방법 | |
JP4996678B2 (ja) | 湿式現像可能な底面反射防止膜組成物及びその使用方法 | |
JP5046236B2 (ja) | 改善された性能を有する液浸トップコート材料 | |
JP4687651B2 (ja) | 微細パターン形成用樹脂組成物および微細パターン形成方法 | |
KR100826104B1 (ko) | 고 내에칭성 반사방지 하드마스크 조성물 및 이를 이용한패턴화된 재료 형상의 제조방법 | |
CN101057185A (zh) | 用于在光致抗蚀剂图案上涂覆的组合物 | |
JP6336545B2 (ja) | 熱酸発生剤及びフォトレジストパターントリミング組成物ならびに方法 | |
KR102050748B1 (ko) | 열산 발생제 및 포토레지스트 패턴 트리밍 조성물 및 방법 | |
US10859916B2 (en) | Composition for forming fine pattern and method for forming fine pattern using the same | |
KR20050022494A (ko) | 스핀레스 코터용 액정표시소자의 포토레지스트 조성물과이를 이용한 포토레지스트 패턴 형성 방법 | |
KR101426321B1 (ko) | 미세 패턴 형성용 조성물 및 이것을 사용한 미세 패턴 형성 방법 | |
KR100740929B1 (ko) | 얼룩 개선용 포토레지스트 조성물 | |
JPS59155836A (ja) | 感光性組成物 | |
US6338930B1 (en) | Positive photoresist layer and a method for using the same | |
JP2663815B2 (ja) | レジストパターン形成方法 | |
KR20230146078A (ko) | 레지스트 막 후막화 조성물 및 후막화 패턴의 제조 방법 | |
EP1716450A1 (en) | Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
G170 | Publication of correction | ||
FPAY | Annual fee payment |
Payment date: 20130628 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140701 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150701 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160630 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170628 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180702 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190625 Year of fee payment: 13 |