KR20020023024A - Equipment of manufacturing semiconductor having apparatus for perceiving wafer of location - Google Patents
Equipment of manufacturing semiconductor having apparatus for perceiving wafer of location Download PDFInfo
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- KR20020023024A KR20020023024A KR1020000055684A KR20000055684A KR20020023024A KR 20020023024 A KR20020023024 A KR 20020023024A KR 1020000055684 A KR1020000055684 A KR 1020000055684A KR 20000055684 A KR20000055684 A KR 20000055684A KR 20020023024 A KR20020023024 A KR 20020023024A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Abstract
Description
본 발명은 웨이퍼 위치 감지장치를 갖는 반도체 제조 설비에 관한 것으로, 더욱 상세하게는 웨이퍼의 회전 반경을 감지함으로써, 웨이퍼의 로딩 상태 불량 여부를 정확하게 감지할 수 있는 웨이퍼 위치 감지장치를 갖는 반도체 제조 설비에 관한 것이다.The present invention relates to a semiconductor manufacturing apparatus having a wafer position sensing apparatus, and more particularly, to a semiconductor manufacturing apparatus having a wafer position sensing apparatus capable of accurately detecting whether a wafer is loaded poorly by sensing a rotation radius of a wafer. It is about.
일반적으로 반도체 공정을 진행할 때에는 반도체 제조 설비와 웨이퍼를 필요로 한다.In general, the semiconductor process requires a semiconductor manufacturing equipment and a wafer.
이때, 웨이퍼는 반도체 제조 설비의 지정된 위치에 정확히 안착되어야만 공정 불량이 발생하지 않는다.At this time, the wafer must be seated correctly at the designated location of the semiconductor manufacturing equipment so that process failure does not occur.
예를 들면, 스핀 코터에서는 웨이퍼가 웨이퍼 척의 지정된 위치 즉, 웨이퍼 척의 회전 중심에 웨이퍼의 회전 중심이 안착되어야만 정밀한 스핀 코팅 공정이 진행된다.For example, in a spin coater, a precise spin coating process is performed only when the wafer is placed at the designated position of the wafer chuck, that is, the center of rotation of the wafer chuck.
만일, 스핀 코터에서 회전되는 웨이퍼가 웨이퍼 척의 지정된 위치에 정확하게 로딩되지 않고 소정 범위 이상 편심되어 회전될 경우, 웨이퍼에 작용하는 원심력은 웨이퍼 척의 회전 중심으로부터 편심된 만큼 다르게 나타난다.If the wafer rotated in the spin coater is eccentrically rotated over a predetermined range without being loaded accurately at the designated position of the wafer chuck, the centrifugal force acting on the wafer will appear as different from the center of rotation of the wafer chuck.
즉, 스핀 코터의 경우를 일례로 살펴보면, 웨이퍼가 편심되었을 경우 앞서 설명한 원심력의 차이 때문에 포토레지스트는 웨이퍼 전체면에 균일하게 도포되지 않는다. 더욱이, 웨이퍼 척 위에 로딩된 웨이퍼의 편심 정도가 클 경우에 웨이퍼는 고속회전에 따라 발생하는 원심력의 차이를 견디지 못하고 스핀 코터 외부로 이탈되어 깨짐이 발생하게 된다.That is, in the case of the spin coater as an example, when the wafer is eccentric, the photoresist is not uniformly applied to the entire surface of the wafer because of the difference in centrifugal force described above. Moreover, when the degree of eccentricity of the wafer loaded on the wafer chuck is large, the wafer does not endure the difference in centrifugal force generated by the high speed rotation and is broken out of the spin coater.
따라서, 본 발명은 이와 같은 문제점을 감안한 것으로써, 본 발명 웨이퍼 위치 감지장치를 갖는 반도체 제조 설비의 목적은 반도체 제조 공정에 의한 반도체 제조 설비에 의하여 웨이퍼를 회전시키는 공정이 진행되는 대상인 웨이퍼의 로딩 상태를 정확하게 감지할 수 있도록 함에 있다.Accordingly, the present invention has been made in view of such a problem, and the object of the semiconductor manufacturing equipment having the wafer position sensing apparatus of the present invention is a loading state of a wafer, which is a target of a process of rotating a wafer by a semiconductor manufacturing equipment by a semiconductor manufacturing process. To accurately detect the
도 1은 본 발명의 일실시 예로 스핀 코터를 도시한 구성도.1 is a block diagram showing a spin coater as an embodiment of the present invention.
도 2a는 도1의 A부분을 확대한 것으로써 웨이퍼가 웨이퍼 척의 지정된 위치에 정확히 로딩되었을 경우를 도시한 단면도.FIG. 2A is a cross-sectional view illustrating a case where the wafer is correctly loaded at a designated position of the wafer chuck by enlarging part A of FIG. 1; FIG.
도 2b는 도1의 A부분을 확대한 것으로써 웨이퍼가 웨이퍼 척의 지정된 위치에 편심되게 로딩되었을 경우를 도시한 단면도.FIG. 2B is a cross-sectional view illustrating a case where the wafer is eccentrically loaded at a designated position of the wafer chuck by enlarging part A of FIG.
이와 같은 본 발명의 목적을 구현하기 위한 반도체 제조 설비는 웨이퍼를 진공 흡착하는 웨이퍼 척을 포함하며 웨이퍼를 회전시키는 웨이퍼 회전장치와, 회전하는 웨이퍼의 회전반경을 감지함으로써, 웨이퍼의 로딩 상태를 정확하게 감지할 수 있는 웨이퍼 위치 감지장치를 포함함에 있다.The semiconductor manufacturing equipment for realizing the object of the present invention includes a wafer chuck for vacuum suction of the wafer and a wafer rotating device for rotating the wafer, and by detecting the rotation radius of the rotating wafer, thereby accurately detecting the loading state of the wafer. Including a wafer position detection device that can be.
이하, 본 발명에서는 스핀 코터에 장착된 웨이퍼 위치감지 장치를 바람직한 일실시예로 설명하기로 한다.Hereinafter, the wafer position sensing apparatus mounted on the spin coater will be described as a preferred embodiment.
첨부된 도 1을 참조하면, 본 발명의 일실시예인 스핀 코터(100)는 전체적으로 보아 포토레지스트 비산방지 커버(30), 웨이퍼 회전장치(20), 포토레지스트 공급장치(40), 웨이퍼 위치 감지장치(50) 및 중앙처리장치(미도시)로 구성된다.Referring to FIG. 1, the spin coater 100, which is an embodiment of the present invention, has a photoresist shatterproof cover 30, a wafer rotator 20, a photoresist supply device 40, and a wafer position sensing device as a whole. 50 and a central processing unit (not shown).
구체적으로 설명하면, 포토레지스트 비산방지 커버(30)는 전체적인 형상이 보울 형상을 갖으며, 밑면의 중앙에는 후술될 웨이퍼 회전장치(20)와 결합될 수 있도록 소정 직경을 갖는 홀(31)이 형성된다. 그리고, 홀(31)의 내부에는 웨이퍼 회전장치(20)가 회전할 수 있도록 베어링(34)과 웨이퍼 회전장치(20)에 흔들림이 발생하지 않도록 지지해주는 부싱(33)이 형성된다. 또한, 포토레지스트 비산방지 커버(30)의 밑면에는 포토레지스트를 배출시킬 수 있는 배출구(32)가 형성된다.Specifically, the photoresist shatterproof cover 30 has a bowl shape as a whole, and a hole 31 having a predetermined diameter is formed at the center of the bottom surface so as to be combined with the wafer rotating apparatus 20 to be described later. do. In addition, a bushing 33 is formed in the hole 31 to support the bearing 34 and the wafer rotating apparatus 20 so that the wafer rotating apparatus 20 may rotate so that shaking does not occur. In addition, an outlet 32 for discharging the photoresist is formed on the bottom surface of the photoresist shatterproof cover 30.
한편, 웨이퍼 회전장치(20)는 전체적으로 보아 구동장치(21), 회전축(22), 웨이퍼 척(23)으로 구성되며, 앞에서 설명한 바와 같이 포토레지스트 비산방지 커버(30)에 형성된 홀(31)에 결합된다.On the other hand, the wafer rotating device 20 is generally composed of a driving device 21, a rotating shaft 22, a wafer chuck 23, and as described above, in the hole 31 formed in the photoresist shatterproof cover 30. Combined.
구체적으로 설명하면, 구동장치(21)는 회전력을 발생시키는 역할을 하고, 1000-5000r.p.m으로 고속 회전이 가능한 모터인 것이 바람직하며, 회전축(22)은 구동장치(21)의 회전력을 웨이퍼 척(23)에 전달하는 역할을 하는 바, 회전축(22)의 일측 단부는 구동장치(21)와 결합되고, 타측 단부는 웨이퍼 척(23)에 결합된다. 이때, 회전축(22)의 직경은 포토레지스트 비산방지 커버(30)에 형성된 홀(31) 및 부싱(33)에 꼭맞게 삽입될 정도로 형성됨이 바람직하다.Specifically, the driving device 21 serves to generate a rotational force, preferably a motor capable of high-speed rotation at 1000-5000r.pm, and the rotation shaft 22 is a wafer chuck to rotate the rotational force of the driving device 21. It serves to transfer to 23, one end of the rotary shaft 22 is coupled to the drive unit 21, the other end is coupled to the wafer chuck 23. In this case, the diameter of the rotating shaft 22 is preferably formed to be inserted into the hole 31 and the bushing 33 formed in the photoresist shatterproof cover 30.
또한, 회전축(22)과 결합되는 웨이퍼 척(23)은 원판 형상으로 포토레지스트 비산방지 커버(30) 내에 설치되며, 선행 공정을 종료하고 웨이퍼 트랜스퍼(미도시)에 의해 이송되어 온 웨이퍼(10)를 진공 흡착하여 고정시키는 역할을 한다. 이때, 웨이퍼 척(23)은 앞에서 설명한 바와 같이 1000-5000r.p.m정도의 고속 회전에서도 웨이퍼(10)가 이탈 움직임 없이 고정 가능해야 함은 물론이다.In addition, the wafer chuck 23 coupled to the rotating shaft 22 is installed in the photoresist shatterproof cover 30 in a disc shape, and the wafer 10 which has been transferred by a wafer transfer (not shown) after completing the preceding process. It serves to fix by vacuum adsorption. At this time, the wafer chuck 23, as described above, of course, even if the high-speed rotation of about 1000-5000 r.
이와 같은 웨이퍼 회전장치(20)에 의해, 고속 회전하는 웨이퍼(10)의 회전중심 부분에 포토레지스트를 공급하면, 포토레지스트는 고속 회전에 따라 발생하는 원심력에 의해서 웨이퍼(10) 일측면 전면적에 걸쳐 포토레지스트가 균일하게 도포된다.When the photoresist is supplied to the center of rotation of the wafer 10 which rotates at high speed by the wafer rotating device 20 as described above, the photoresist is spread over the entire surface of one side surface of the wafer 10 by the centrifugal force generated by the high speed rotation. The photoresist is applied uniformly.
이를 구현하기 위해서는 포토레지스트 공급장치(40)를 필요로 한다. 포토레지스트 공급장치(40)는 전체적으로 포토레지스트 공급유닛(41), 포토레지스트 공급배관(42), 포토레지스트 공급노즐(43)로 구성된다.In order to implement this, a photoresist supply device 40 is required. The photoresist supply device 40 is composed of a photoresist supply unit 41, a photoresist supply pipe 42, and a photoresist supply nozzle 43 as a whole.
구체적으로, 포토레지스트 공급배관(42)은 일측 단부에 포토레지스트 공급유닛(41)과 연통되며, 타측 단부는 포토레지스트 공급노즐(43)과 연통된다. 이때, 포토레지스트 공급노즐(43)은 포토레지스트 공급유닛(41)이 공급하는 포토레지스트를 포토레지스트 공급배관(42)을 통하여 웨이퍼(10)에 공급하는 역할을 한다.Specifically, the photoresist supply pipe 42 is in communication with the photoresist supply unit 41 at one end, and the other end is in communication with the photoresist supply nozzle 43. At this time, the photoresist supply nozzle 43 serves to supply the photoresist supplied by the photoresist supply unit 41 to the wafer 10 through the photoresist supply pipe 42.
이와 같이 웨이퍼 회전장치(20)에 의해 회전하는 웨이퍼(10)에 포토레지스트를 공급하여 균일한 포토레지스트 박막을 형성하기 위해서는 웨이퍼 트랜스퍼에 의해 이송되는 웨이퍼(10)가 웨이퍼 척(23) 위에 로딩될 때, 웨이퍼 척(23)의 지정된 위치에 정확하게 로딩되어야 한다.In order to supply the photoresist to the wafer 10 rotated by the wafer rotating device 20 to form a uniform photoresist thin film, the wafer 10 transferred by the wafer transfer may be loaded on the wafer chuck 23. At that time, it must be loaded correctly at the designated position of the wafer chuck 23.
만일, 웨이퍼(10)의 회전 중심이 웨이퍼 척(23)의 회전 중심에 로딩되지 않고 편심되게 로딩될 경우, 웨이퍼(10)에는 웨이퍼 척(23)의 회전 중심과 웨이퍼(10)의 회전 중심사이의 편심된 거리만큼 원심력의 편차가 발생한다.If the rotational center of the wafer 10 is eccentrically loaded instead of being loaded into the rotational center of the wafer chuck 23, the wafer 10 has a gap between the rotational center of the wafer chuck 23 and the rotational center of the wafer 10. The deviation of the centrifugal force occurs by the eccentric distance of.
따라서, 이와 같이 편심된 상태에서 회전하는 웨이퍼(10)에는 각 원주면에서 발생하는 원심력의 편차로 인해 웨이퍼(10)에 포토레지스트가 공급된다 할지라도 웨이퍼(10) 전체면에 포토레지스트가 균일하게 도포되지 않는다. 또한, 웨이퍼(10)의 편심 정도가 심할 경우에는 웨이퍼(10)에서 발생되는 원심력의 편차도 크기 때문에 웨이퍼(10)는 견디지 못하고 외부로 이탈되는 현상이 빈번히 발생한다.Therefore, even if the photoresist is supplied to the wafer 10 due to the variation in the centrifugal force generated at each circumferential surface, the photoresist is uniformly applied to the entire surface of the wafer 10. It is not applied. In addition, when the degree of eccentricity of the wafer 10 is severe, the phenomenon in which the wafer 10 is not tolerated and is detached to the outside occurs frequently because the deviation of the centrifugal force generated in the wafer 10 is also large.
이를 극복하기 위하여, 본 발명에서는 스핀 코터(100)의 웨이퍼 척(23) 위에 로딩되는 웨이퍼(10)의 로딩 상태를 감지하기 위해 웨이퍼 위치 감지장치(50)가 사용된다.In order to overcome this, in the present invention, the wafer position sensing device 50 is used to detect the loading state of the wafer 10 loaded on the wafer chuck 23 of the spin coater 100.
구체적으로 설명하면, 본 발명의 웨이퍼 위치감지 장치(50)는 웨이퍼(10)가 웨이퍼 척(23)에 로딩되어 회전하는 웨이퍼(10)의 회전 반경을 감지함에 있어서, 지정된 위치 즉, 웨이퍼(10)의 회전 중심이 웨이퍼 척(23)의 회전 중심에 정확히 로딩되었을 때에는 웨이퍼 위치 감지장치(50)가 웨이퍼(10)를 감지하지 못하고, 웨이퍼(10)가 웨이퍼 척(23)에 로딩될 때 지정된 위치에서 소정 간격 이상 편심되게 로딩되었을 경우에는 웨이퍼(10)의 회전 반경은 편심된 만큼 커지기 때문에 웨이퍼 위치 감지장치(50)는 회전하는 웨이퍼(10)를 감지할 수 있도록 설치된다.Specifically, the wafer position detecting apparatus 50 according to the present invention detects a radius of rotation of the wafer 10 in which the wafer 10 is loaded on the wafer chuck 23 and rotates. ), When the rotation center of the wafer is correctly loaded at the rotation center of the wafer chuck 23, the wafer position detecting device 50 does not detect the wafer 10, and is designated when the wafer 10 is loaded on the wafer chuck 23. When the load is eccentrically loaded at a predetermined interval, the wafer radius sensing device 50 is installed to detect the rotating wafer 10 because the radius of rotation of the wafer 10 increases as much as the eccentricity.
이때, 웨이퍼 위치 감지장치(50)는 웨이퍼(10)가 웨이퍼 척(23)의 지정된 위치에 정확히 로딩되어 웨이퍼(10)의 회전중심이 웨이퍼 회전장치(20)의 회전중심과 일치한 상태에서 광이 방출되면 웨이퍼(10)와 방출한 광이 접촉되지 않으므로 광이 입사되지 않도록 하고, 웨이퍼(10)가 웨이퍼 척(23)의 지정된 위치에서 편심되어 웨이퍼(10)의 회전중심이 웨이퍼 회전장치(20)의 회전중심으로부터 소정거리 이상 벗어난 상태에서 광이 방출되면 웨이퍼(10)와 방출한 광이 접촉함과 동시에 반사되어 다시 처음 위치로 입사되도록 하는 발광센서와 수광센서가 동일 위치에 형성된 광센서를 채택하는 것이 바람직하다.At this time, the wafer position sensing device 50 is loaded with the wafer 10 accurately loaded at the designated position of the wafer chuck 23 so that the center of rotation of the wafer 10 coincides with the center of rotation of the wafer rotator 20. When the light is emitted, the emitted light does not come into contact with the wafer 10 so that light does not enter the wafer 10, and the wafer 10 is eccentric at a designated position of the wafer chuck 23, so that the rotation center of the wafer 10 is changed by the wafer rotating device ( When light is emitted from the rotation center of 20) over a predetermined distance, the light sensor and the light receiving sensor are formed at the same position so that the light emitting sensor and the light receiving sensor are made to be in contact with the wafer 10 and the emitted light is reflected and returned to the initial position. It is preferable to adopt.
이하, 이와 같은 구성을 갖는 본 발명의 스핀 코터(100)의 작동에 대해 설명하면 다음과 같다.Hereinafter, the operation of the spin coater 100 of the present invention having such a configuration will be described.
선행 공정을 종료한 후, 웨이퍼 트랜스퍼에 의해 스핀 코팅이 진행될 웨이퍼(10)가 본 발명에 따른 스핀 코터(100)로 이송되어 웨이퍼 척(23)에 로딩되면, 웨이퍼 척(23)은 웨이퍼(10)를 진공으로 흡착하여 고정하게 된다. 이후, 웨이퍼 척(23)이 웨이퍼(10)를 고정하면, 구동장치(21)는 회전하기 시작하고, 이에 따라서 웨이퍼(10)도 회전하기 시작하며, 웨이퍼 위치 감지장치(50)는 회전하는 웨이퍼(10)의 회전 반경을 감지하기 시작한다.After finishing the preceding process, when the wafer 10 to be spin coated by the wafer transfer is transferred to the spin coater 100 according to the present invention and loaded on the wafer chuck 23, the wafer chuck 23 is transferred to the wafer 10. ) Is fixed by suction by vacuum. Thereafter, when the wafer chuck 23 fixes the wafer 10, the driving device 21 starts to rotate, and accordingly, the wafer 10 also starts to rotate, and the wafer position sensing device 50 rotates. Start detecting the radius of rotation of 10.
이때, 도 2a와 같이, 웨이퍼 위치 감지장치(50)에 의하여 웨이퍼(10)가 감지되지 않으면 웨이퍼(10)는 웨이퍼 척(23)의 지정된 위치에 정확히 로딩되어 있는 것임으로, 포토레지스트 공급장치(40)는 포토레지스트를 공급하여 웨이퍼(10)의 일측면 전면적에 걸쳐 포토레지스트가 얇고 균일하게 도포된다.In this case, as shown in FIG. 2A, when the wafer 10 is not detected by the wafer position sensing device 50, the wafer 10 is correctly loaded at a designated position of the wafer chuck 23. 40 is a photoresist supplying a thin and uniform coating of the photoresist over the entire surface of one side of the wafer 10.
또한, 도 2b와 같이, 웨이퍼 위치 감지장치(50)에 의하여 웨이퍼(10)가 감지되면 웨이퍼(10)는 웨이퍼 척(23)의 지정된 위치에서 편심되게 로딩된 것임으로, 웨이퍼 척(23)에 웨이퍼(10)를 이송하는 웨이퍼 트랜스퍼에는 이상이 있음을 알 수 있고, 중앙처리장치는 포토레지스트를 공급하기 이전에 웨이퍼 회전장치(20) 및 웨이퍼 트랜스퍼를 인터록 시키게 된다.In addition, as shown in FIG. 2B, when the wafer 10 is sensed by the wafer position sensing device 50, the wafer 10 is eccentrically loaded at a designated position of the wafer chuck 23, and thus, the wafer chuck 23 is loaded on the wafer chuck 23. It can be seen that there is an abnormality in the wafer transfer that transfers the wafer 10, and the central processing unit interlocks the wafer rotator 20 and the wafer transfer before supplying the photoresist.
이상에서 설명한 바에 의하면, 회전하는 웨이퍼의 회전반경을 감지함으로써, 웨이퍼의 로딩 상태 불량 여부가 확인이 가능할 뿐만 아니라 웨이퍼 트랜스퍼의 설비 이상 여부를 조기에 판단할 수 있도록 하는 효과가 있다.As described above, by detecting the rotation radius of the rotating wafer, it is possible not only to check whether the wafer is loaded poorly, but also to determine whether the wafer transfer is in an abnormal condition early.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020000055684A KR20020023024A (en) | 2000-09-22 | 2000-09-22 | Equipment of manufacturing semiconductor having apparatus for perceiving wafer of location |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI398651B (en) * | 2008-05-02 | 2013-06-11 | Qcept Technologies Inc | Method and system of determining the contact potential difference of a surface of a material to characterize properties of the surface, semiconductor wafer prepared for use in an electronic component, and method of w determining the contact potential dif |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI398651B (en) * | 2008-05-02 | 2013-06-11 | Qcept Technologies Inc | Method and system of determining the contact potential difference of a surface of a material to characterize properties of the surface, semiconductor wafer prepared for use in an electronic component, and method of w determining the contact potential dif |
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