KR20020016989A - Bst박막 제조방법 및 이에 사용되는 기화기 - Google Patents
Bst박막 제조방법 및 이에 사용되는 기화기 Download PDFInfo
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- KR20020016989A KR20020016989A KR1020000050023A KR20000050023A KR20020016989A KR 20020016989 A KR20020016989 A KR 20020016989A KR 1020000050023 A KR1020000050023 A KR 1020000050023A KR 20000050023 A KR20000050023 A KR 20000050023A KR 20020016989 A KR20020016989 A KR 20020016989A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (11)
- 반응챔버 내에 장입된 기판 상에 MOCVD법으로 BST박막을 형성하는 BST박막 형성방법에 있어서,Ba(METHD)2, Sr(METHD)2, 및 Ti(MPD)(THD)2를 솔벤트에 용해시켜 싱글 칵테일 소스를 마련하는 단계와,상기 싱글 칵테일 소스를 기화기로 기화시켜 BST 소스기체를 형성한 후 상기 BST 소스기체를 운반기체의 흐름에 편승시켜 반응기로 공급하는 동시에 상기 BST 소스기체와 반응되어질 산소기체를 상기 반응기로 공급하는 단계를 포함하는 것을 특징으로 하는 BST박막 형성방법.
- 제1 항에 있어서, 상기 솔벤트가 메탄올, THF, 또는 부틸아세테이트인 것을 특징으로 하는 BST박막 형성방법.
- 제1 항에 있어서, 상기 싱글 칵테일 소스의 Ba : Sr : Ti 비가 0.035 : 0.025 : 0.17~0.38 인 것을 특징으로 하는 BST박막 형성방법.
- 제1 항에 있어서, 상기 싱글 칵테일 소스가 0.1~0.5g/mim의 속도로 기화되는 것을 특징으로 하는 BST박막 형성방법.
- 제4 항에 있어서, 상기 기화기가 270~290℃의 온도범위로 가열되는 것을 특징으로 하는 BST박막 형성방법.
- 제4 항에 있어서, 상기 산소기체가 200~500sccm의 유속범위로 공급되는 것을 특징으로 하는 BST박막 형성방법.
- 제4 항에 있어서, 상기 운반기체가 300~400sccm의 유속범위로 공급되는 것을 특징으로 하는 BST박막 형성방법.
- 제1 항에 있어서, 상기 기판이 420~460℃의 온도범위를 가지는 것을 특징으로 하는 BST박막 형성방법.
- 제1 항에 있어서, 상기 반응챔버가 1~2 Torr의 압력범위를 가지는 것을 특징으로 하는 BST박막 형성방법.
- 제1 항에 있어서, 상기 운반기체 및 상기 BST 소스기체가 인젝터 방식에 의해 상기 반응기로 함께 공급되는 것을 특징으로 하는 BST박막 형성방법.
- Ba(METHD)2, Sr(METHD)2, 및 Ti(MPD)(THD)2가 용해된 싱글 칵테일 소스를 기화시켜 BST 소스기체를 형성한 다음에 반응기에 설치되는 기체인젝터를 통하여 상기 반응기로 상기 BST 소스기체를 공급하는 기화기에 있어서,상기 기화기는,상기 싱클 칵테일 소스를 기화시켜 상기 BST 소스기체를 형성하는 기화부와,상기 기화부에서 형성된 BST 소스기체가 상기 기체인젝터로 흘러가도록 상기 기화부에서 돌출되도록 연장되어 상기 기체인젝터와 연결되는 BST 소스기체 공급단과,상기 기화부에서 형성된 BST 소스기체가 외부로 배출되도록 상기 BST 소스기체 공급단에서 돌출되도록 분기되는 BST 소스기체 배기단과,상기 기화부와, 상기 BST 소스기체 공급단과, 상기 BST 소스기체 배기단을 각각 둘러싸도록 설치되는 블록히터를 포함하여 이루어지는 것을 특징으로 하는 기화기.
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