KR200177318Y1 - Gas reverse flow preventing apparatus - Google Patents
Gas reverse flow preventing apparatus Download PDFInfo
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- KR200177318Y1 KR200177318Y1 KR2019970031513U KR19970031513U KR200177318Y1 KR 200177318 Y1 KR200177318 Y1 KR 200177318Y1 KR 2019970031513 U KR2019970031513 U KR 2019970031513U KR 19970031513 U KR19970031513 U KR 19970031513U KR 200177318 Y1 KR200177318 Y1 KR 200177318Y1
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- Prior art keywords
- gas
- mixer
- chemical vapor
- vapor deposition
- sih
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- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000002265 prevention Effects 0.000 claims abstract description 10
- 230000000903 blocking effect Effects 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 51
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 고안은 반도체 화학기상증착장비의 가스역류방지장치에 관한 것으로, 종래 화학기상증착장비에서는 믹서에서 혼합된 혼합가스가 압력이 낮은 가스라인으로 역류되어 챔버로 정상적인 혼합가스의 공급이 이루어지지 못하는 문제점이 있었다. 본 고안 반도체 화학기상증착장비의 가스역류방지장치는 SiH4공급라인(14)과 믹서(12)의 연결부위에 용량이 작은 역류차단믹서(20)를 설치하여, 혼합가스가 압력이 낮은 SiH4공급라인(14)으로 역류하는 것을 차단함으로서, 챔버(11)로 일정양의 혼합가스를 공급하게 되어 증착 유니퍼머티의 향상에 의한 웨이퍼의 품질이 향상되는 효과가 있다.The present invention relates to a gas backflow prevention device for a semiconductor chemical vapor deposition apparatus. In the conventional chemical vapor deposition apparatus, a mixed gas mixed in a mixer is flowed back to a gas line having a low pressure so that a normal mixed gas cannot be supplied to a chamber. There was this. Gas backflow prevention device of the semiconductor chemical vapor deposition equipment of the present invention is installed in the connection between the SiH 4 supply line 14 and the mixer 12 with a small capacity backflow cut-off mixer 20, the mixed gas is low pressure SiH 4 By blocking the back flow to the supply line 14, a certain amount of mixed gas is supplied to the chamber 11, thereby improving the quality of the wafer due to the improvement of the deposition uniformity.
Description
본 고안은 반도체 화학기상증착장비의 가스역류방지장치에 관한 것으로, 특히 2종류의 가스가 믹서에서 혼합되어 챔버의 내측으로 공급될시 혼합된 가스가 압력이 낮은 가스라인으로 역류되는 것을 방지하도록 하는데 적합한 반도체 화학기상증착장비의 가스역류방지장치에 관한 것이다.The present invention relates to a gas backflow prevention device for semiconductor chemical vapor deposition equipment, and in particular, to prevent the mixed gas from flowing back into a gas line with low pressure when two kinds of gases are mixed in a mixer and supplied into the chamber. A gas backflow prevention device for a suitable semiconductor chemical vapor deposition equipment.
일반적으로 반도체 웨이퍼 화학기상증착장비에서는 서로 다른 양의 2가지 반응가스가 믹서에서 혼합된 다음, 챔버의 내측으로 공급되게 되는데, 이와 같은 종래 화학기상증착장비의 가스공급부가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.In general, in a semiconductor wafer chemical vapor deposition apparatus, two reaction gases of different amounts are mixed in a mixer and then supplied into the chamber. The gas supply unit of the conventional chemical vapor deposition apparatus is shown in FIG. This is briefly explained as follows.
도 1은 종래 화학기상증착장비의 가스공급부를 개략적으로 보인 상태도로서, 도시된 바와 같이, 화학기상증착장비의 공정 챔버(1) 상측에 믹서(2)가 설치되어 있고, 그 믹서(2)의 일측에는 WF6공급라인(3)이 연결설치되어 있으며, 상기 믹서(2)의 상측으로는 SiH4공급라인(4)이 연결설치되어 있다.FIG. 1 is a state diagram schematically showing a gas supply unit of a conventional chemical vapor deposition apparatus. As illustrated, a mixer 2 is installed above a process chamber 1 of a chemical vapor deposition apparatus, and the mixer 2 is One side is connected to the WF 6 supply line (3), the upper side of the mixer (2) is connected to the SiH 4 supply line (4).
상기와 같이 구성되어 있는 화학기상증착장비의 가스공급부에서는 공정진행시 SiH4공급라인(4)을 통하여 SiH4가스가 믹서(2)로 공급되고, 그 SiH4공급라인(4)으로 공급되는 SiH4가스 보다 100배 많은 양의 WF6가스가 WF6공급라인(3)을 통하여 믹서(2)로 공급되며, 이와 같이 믹서(2)에 공급된 SiH4가스와 WF6가스는 믹서(2)에 혼합되어 챔버(1)의 내측으로 공급되어 웨이퍼에 W 필름을 증착하게 된다.In the gas supply unit of the chemical vapor deposition apparatus configured as described above, the SiH 4 gas is supplied to the mixer 2 through the SiH 4 supply line 4 during the process, and the SiH supplied to the SiH 4 supply line 4. 100 times more WF 6 gas than 4 gas is supplied to the mixer 2 via the WF 6 supply line 3, and thus the SiH 4 gas and WF 6 gas supplied to the mixer 2 are supplied to the mixer 2. It is mixed with and supplied into the chamber 1 to deposit the W film on the wafer.
그러나, 상기와 같은 종래 화학기상증착장비에서는 믹서(2)에서 반응가스의 혼합시 가스라인 간의 분압차이가 발생되고, 그 가스 분압차이에 의하여 압력이 낮은 SiH4공급라인(4)으로 혼합가스가 역류되어 챔버(1)로 증착에 필요한 일정양의 가스공급이 이루어지지 못하여 품질저하를 초래하는 문제점이 있었다.However, in the conventional chemical vapor deposition equipment as described above, the partial pressure difference between the gas lines is generated when the reaction gas is mixed in the mixer 2, and the mixed gas is transferred to the SiH 4 supply line 4 having a low pressure due to the gas partial pressure difference. There was a problem that the flow back is not a certain amount of gas supply required for deposition into the chamber (1) resulting in deterioration of quality.
상기와 같은 문제점을 감안하여 안출한 본 고안의 목적은 믹서에서 혼합된 혼합가스가 역류되는 것을 방지하여 챔버로 정상적인 가스공급이 이루어지도록 하는데 적합한 반도체 화학기상증착장비의 가스역류방지장치를 제공함에 있다.An object of the present invention devised in view of the above problems is to provide a gas backflow prevention device of a semiconductor chemical vapor deposition equipment suitable for preventing a normal gas supply to the chamber by preventing the mixed gas mixed in the mixer to flow back. .
도 1은 종래 화학기상증착장비의 가스공급부를 개략적으로 보인 상태도.1 is a schematic view showing a gas supply unit of a conventional chemical vapor deposition apparatus.
도 2는 본 고안 가스역류방지장치가 설치된 화학기상증착장비를 개략적으로 보인 상태도.Figure 2 is a schematic view showing a chemical vapor deposition equipment is installed gas invented gas flow prevention device.
** 도면의 주요 부분에 대한 부호의 설명 **** Description of symbols for the main parts of the drawing **
12 : 믹서 20 : 역류차단믹서12 mixer 20 counterflow mixer
상기와 같은 본 고안의 목적을 달성하기 위하여 2개의 가스라인을 통하여 공급된 2종류의 반응가스를 믹서에서 혼합하여 챔버로 공급하는 반도체 화학기상증착장비에 있어서. 상기 가스라인 중 압력이 낮은 가스라인과 믹서의 연결부에 역류차단믹서를 설치하여서 구성되는 것을 특징으로 하는 반도체 화학기상증착장비의 가스역류방지장치가 제공된다.In the semiconductor chemical vapor deposition equipment for supplying the two kinds of reaction gas supplied through the two gas lines in the mixer to the chamber to achieve the object of the present invention as described above. Provided is a gas backflow prevention device for semiconductor chemical vapor deposition equipment, characterized in that a reverse flow block mixer is installed at a connection portion of a gas line having a low pressure in the gas line and a mixer.
이하, 상기와 같이 구성되는 본 고안 반도체 화학기상증착장비의 가스역류방지장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings, a gas backflow prevention device of the inventive semiconductor chemical vapor deposition apparatus configured as described above in more detail as follows.
도 2는 본 고안 가스역류방지장치가 설치된 화학기상증착장비를 개략적으로 보인 상태도로서, 도시된 바와 같이, 본 고안 가스역류방지장치가 설치된 화학기상증착장비는 공정 챔버(11)의 상측에 믹서(12)가 설치되어 있고, 그 믹서(12)의 일측에는 WF6공급라인(13)이 연결설치되어 있으며, 상기 믹서(12)의 상측으로는 SiH4공급라인(14)이 연결설치되어 있다.FIG. 2 is a schematic view showing a chemical vapor deposition apparatus having a gas backflow preventing device of the present invention. As shown in FIG. 12) is provided, the WF 6 supply line 13 is connected to one side of the mixer 12, the SiH 4 supply line 14 is connected to the upper side of the mixer 12.
그리고, 상기 SiH4공급라인(14)과 믹서(12)의 연결부위에는 믹서(12)에서 혼합된 혼합가스가 분압차에 의하여 압력이 낮은 SiH4공급라인(14)으로 역류되는 것을 차단하기 위한 역류차단믹서(20)가 설치되어 있다.In addition, at the connection portion of the SiH 4 supply line 14 and the mixer 12, the mixed gas mixed in the mixer 12 is prevented from flowing back to the SiH 4 supply line 14 having a low pressure due to a partial pressure difference. The backflow block mixer 20 is provided.
상기 역류차단믹서(20)는 상기 믹서(12) 보다 내부용량을 적게하여 적은 양의 SiH4가스에 의해서도 큰 폭으로 가스분압이 올라갈 수 있도록 하는 것을 바람직하다.The countercurrent flow mixer 20 preferably has a lower internal capacity than the mixer 12 so that the partial pressure of gas can be increased by a small amount of SiH 4 gas.
상기와 같이 구성되어 있는 본 고안 반도체 화학기상증착장비의 가스역류방지장치의 작용을 설명하면 다음과 같다.Referring to the operation of the gas backflow prevention device of the semiconductor chemical vapor deposition equipment of the present invention configured as described above are as follows.
공정진행시 SiH4공급라인(14)을 통하여 SiH4가스가 믹서(12)로 공급되고, 그 SiH4공급라인(14)으로 공급되는 SiH4가스 보다 100배 많은 양의 WF6가스가 WF6공급라인(13)을 통하여 믹서(12)로 공급되며, 이와 같이 믹서(12)에 공급된 SiH4가스와 WF6가스는 믹서(12)에 혼합되어 챔버(11)의 내측으로 공급되어 웨이퍼에 W 필름을 증착하는 것은 종래와 유사하다.Process is supplied to the SiH 4 supply line (14) SiH 4 gas mixer 12 through the city proceeds, the SiH 4 supply line 14 is WF 6 gas, 100 times more amount than the SiH 4 gas supplied to the WF 6 The SiH 4 gas and the WF 6 gas supplied to the mixer 12 through the supply line 13 are mixed in the mixer 12 and supplied to the inside of the chamber 11 to the wafer. Depositing a W film is similar to the prior art.
여기서, 본 고안은 상기 믹서(12)에서 혼합된 혼합가스가 가스분압에 의하여 압력이 낮은 SiH4공급라인(14)으로 역류하게 되는데, 이때 가스의 흐름은 내부용량이 작아서 가스분압이 높은 역류차단믹서(20)에서 기존의 믹서(12)측으로 가스가 흘러가기 때문에 혼합가스의 역류를 차단하게 된다.Here, in the present invention, the mixed gas mixed in the mixer 12 flows back into the SiH 4 supply line 14 having a low pressure due to the partial pressure of gas. Since gas flows from the mixer 20 to the existing mixer 12 side, the reverse flow of the mixed gas is blocked.
이상에서 상세히 설명한 바와 같이, 본 고안 반도체 화학기상증착장비의 가스역류방지장치는 SiH4공급라인과 믹서의 연결부위에 용량이 작은 역류차단믹서를 설치하여, 혼합가스가 압력이 낮은 SiH4공급라인으로 역류하는 것을 차단함으로서, 챔버로 일정양의 혼합가스를 공급하게 되어 증착 유니퍼머티의 향상에 의한 웨이퍼의 품질이 향상되는 효과가 있다.As described above, the present design prevents the gas back flow of the semiconductor chemical vapor deposition equipment apparatus SiH 4 by installing the supply line and the mixer capacity is small reverse flow blocking mixer of the hinges of the mixed gas is SiH 4 supply line a low pressure By blocking the backflow to the substrate, a certain amount of the mixed gas is supplied to the chamber, thereby improving the quality of the wafer due to the improvement of the deposition uniformity.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970031513U KR200177318Y1 (en) | 1997-11-10 | 1997-11-10 | Gas reverse flow preventing apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970031513U KR200177318Y1 (en) | 1997-11-10 | 1997-11-10 | Gas reverse flow preventing apparatus |
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| Publication Number | Publication Date |
|---|---|
| KR19990018267U KR19990018267U (en) | 1999-06-05 |
| KR200177318Y1 true KR200177318Y1 (en) | 2000-05-01 |
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| KR2019970031513U KR200177318Y1 (en) | 1997-11-10 | 1997-11-10 | Gas reverse flow preventing apparatus |
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| KR (1) | KR200177318Y1 (en) |
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- 1997-11-10 KR KR2019970031513U patent/KR200177318Y1/en not_active IP Right Cessation
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